Cooling device for ion beam etching wafer

Abstract

The utility model provides a cooling device for ion beam etching of a wafer, which comprises a mounting rack, a cooling mechanism for cooling the wafer, and a control module arranged on the cooling mechanism, the positioning rods are arranged on the mounting frame and used for positioning the wafers, the limiting mechanism is arranged on at least one positioning rod, and the rotating mechanism is arranged between the mounting frame and the cooling mechanism. According to the utility model, helium can enter a space formed by the material placing table and the rotating plate in a uniformly distributed manner through the arrangement of the shunt pipe, so that the temperature of the material placing table is uniformly distributed, and the temperature generated on the back surface of a wafer is uniformly and quickly taken away, thereby ensuring that the wafer is kept at a stable temperature in a high-precision processing process such as ion beam etching and the like; and secondly, cooling is achieved through helium, the helium serves as inert gas and is environmentally friendly, meanwhile, the heat conduction performance of the helium is excellent, the cooling process is more efficient, and therefore energy consumption is reduced.

Description

TECHNICAL FIELD

[0001] The utility model relates to the technical field of ion beam etching wafer, especially relates to a cooling device for ion beam etching wafer. BACKGROUND

[0002] In modern semiconductor industry, ion beam etching wafer technology occupies a crucial position. With the continuous pursuit of high performance, miniaturization and high integration of electronic equipment, the precision and quality of wafer processing are put forward higher and higher requirements.

[0003] Wafer as the basic material of semiconductor devices, its surface microfabrication is essential to realize complex circuit structure and excellent device performance. Ion beam etching technology emerges as the times require, it uses the directional bombardment of high-speed ion beam, can accurately remove the material on the surface of wafer, so as to realize various fine patterns and structures.

[0004] In the prior art, during the ion beam etching process, the change of wafer surface temperature is fast and complex. The existing cooling device may not be able to stably control the wafer temperature, resulting in overheating or overcooling in some areas, which will have adverse effects on the etching quality and wafer performance. Secondly, the uniformity of wafer surface temperature distribution is crucial to the precision and consistency of etching, however, the existing cooling device may be difficult to achieve uniform distribution of wafer surface temperature, especially in the case of changing wafer temperature during etching process, which increases the uncertainty and error of etching result. UTILITY MODEL CONTENT

[0005] Therefore, the utility model aims at providing a cooling device for ion beam etching wafer, which can realize uniform distribution of wafer surface temperature.

[0006] The utility model provides the following technical scheme: a cooling device for ion beam etching wafer, characterized by comprising mounting frame, cooling mechanism for cooling wafer, control module arranged on the cooling mechanism, a plurality of positioning rods for positioning the wafer are arranged on the mounting frame, limiting mechanism is arranged on at least one positioning rod, and rotating mechanism is arranged between the mounting frame and the cooling mechanism.

[0007] The cooling mechanism comprises a helium gas supplier, a material placing table arranged on the mounting rack, a plurality of gas outlet pipes arranged on the side wall of the material placing table in uniform intervals and in communication, a rotating plate rotatably connected to the lower part of the material placing table, a plurality of shunt pipes arranged on the rotating plate, a shunt disc fixedly connected with each of the shunt pipes, a rotating pipe arranged on the shunt disc, and a connecting pipe arranged on the helium gas supplier, wherein a space is formed between the rotating plate and the material placing table, the connecting pipe, the rotating pipe, the shunt disc, the shunt pipe and the space are in communication in sequence, the rotating pipe is rotatably connected with the connecting pipe, and the driving mechanism is used to drive the shunt disc to rotate.

[0008] Further, the mounting rack comprises a plurality of first supports arranged on the ion beam etching device and a mounting block fixedly connected with the first supports, the positioning rods are arranged on the upper part of the mounting block, and the material placing table is arranged on the inner side of the mounting block.

[0009] Further, the rotating mechanism comprises a first motor arranged on the mounting rack, a first gear arranged on the output shaft of the first motor, and a second gear arranged on the outer wall of the shunt disc, wherein the first gear is engaged with the second gear.

[0010] Further, the control module comprises a pressure valve and a flow valve arranged on the connecting pipe, and a temperature sensor arranged on the material placing table, wherein the temperature sensor is located in the space, the temperature sensor senses the temperature in the space to adjust the pressure valve and the flow valve, and control the pressure and flow of the helium gas supplied by the helium gas supplier.

[0011] Further, the positioning rods are arranged in a 360° rotating array along the axis of the material placing table, and a limiting mechanism is arranged on two opposite positioning rods.

[0012] Further, the limiting mechanism comprises a rotating seat arranged on the positioning rod, a rotating piece rotatably connected to the rotating seat, a second support fixedly connected to the rotating seat, and a second motor fixedly connected to the second support, wherein the output shaft of the second motor is connected with the rotating shaft of the rotating piece.

[0013] Further, a support is fixedly connected to the mounting rack, and the support is rotatably connected with the rotating pipe.

[0014] The utility model discloses an advantage lies in that: through the setting of the shunt pipe can make the helium gas evenly distribute into the space formed by the material placing table and the rotating plate, make the temperature distribution of material placing table even, reach the temperature produced on the back of wafer is taken away evenly and quickly, thereby ensure that wafer keeps stable temperature in the high-precision processing such as ion beam etching, secondly realize cooling through helium gas, helium gas as a kind of inert gas, friendly to the environment, simultaneously its heat conduction performance is excellent, make the cooling process more efficient, thereby reduce energy consumption, through the effect of control module, wherein the temperature sensor of control module can detect the temperature in the space formed by material placing table and rotating plate, and according to the cooling demand of preadjustment adjustment helium gas's pressure and flow, that is, through temperature sensor adjustment pressure valve and the opening degree of flow valve, reach the effect of real-time adjustment temperature in the space formed by material placing table and rotating plate, make the temperature in this space keep constant, thereby make the back of wafer keep in ideal temperature range, through the setting of rotating mechanism can make shunt disk rotate, thereby make shunt pipe and rotating plate rotate, further reach helium gas evenly into the space formed by material placing table and rotating plate. BRIEF DESCRIPTION OF DRAWINGS

[0015] Figure 1 It is the three-dimensional structure schematic diagram of the utility model.

[0016] Figure 2 It is the three-dimensional structure schematic diagram of the utility model mounting bracket.

[0017] Figure 3 It is the three-dimensional structure schematic diagram of the utility model cooling mechanism.

[0018] Figure 4 It is the three-dimensional structure schematic diagram of the utility model cooling mechanism.

[0019] Figure 5 It is the three-dimensional structure schematic diagram of the utility model rotating mechanism.

[0020] Figure 6 It is the three-dimensional structure schematic diagram of the utility model control module.

[0021] Figure 7 It is the three-dimensional structure schematic diagram of the utility model limiting mechanism.

[0022] Figure 8 It is the three-dimensional structure schematic diagram of the utility model support.

[0023] The labels in the attached diagram are as follows: 1-mounting bracket, 11-first support, 12-mounting block, 2-positioning rod, 3-cooling mechanism, 31-helium gas supplier, 32-connecting pipe, 33-rotating pipe, 34-diverter plate, 35-diverter pipe, 36-feeding platform, 37-outlet pipe, 38-rotating plate, 4-rotating mechanism, 41-first motor, 42-first gear, 43-second gear, 5-control module, 51-pressure valve, 52-flow valve, 53-temperature sensor, 6-limiting mechanism, 61-rotating seat, 62-second support, 63-second motor, 64-rotating component, 7-support component. Detailed Implementation

[0024] To facilitate understanding of this utility model, a more complete description will be given below with reference to the accompanying drawings. Several embodiments of this utility model are shown in the drawings. However, this utility model can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of this utility model will be more thorough and complete.

[0025] It should be noted that when a component is said to be "fixed to" another component, it can be directly on the other component or there may be an intervening component. When a component is said to be "connected to" another component, it can be directly connected to the other component or there may be an intervening component. The terms "vertical," "horizontal," "left," "right," and similar expressions used in this document are for illustrative purposes only.

[0026] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.

[0027] A cooling device for ion beam etching wafers, such as Figures 1-7 As shown, it includes a mounting frame 1, a cooling mechanism 3 for cooling the wafer, a control module 5 disposed on the cooling mechanism 3, a plurality of positioning rods 2 disposed on the mounting frame 1 for positioning the wafer, a limiting mechanism 6 disposed on at least one of the positioning rods 2, and a rotating mechanism 4 disposed between the mounting frame 1 and the cooling mechanism 3.

[0028] like Figure 3As shown, the cooling mechanism 3 includes a helium supply 31, a material placement platform 36 mounted on the mounting frame 1, a plurality of gas outlet pipes 37 evenly spaced and connected on the side wall of the material placement platform 36, a rotating plate 38 rotatably connected to the lower part of the material placement platform 36, a plurality of diversion pipes 35 mounted on the rotating plate 38, a diversion disk 34 fixedly connected to each of the diversion pipes 35, a rotating pipe 33 mounted on the diversion disk 34, and a connecting pipe 32 mounted on the helium supply 31. A space is formed between the rotating plate 38 and the material placement platform 36. The connecting pipe 32, the rotating pipe 33, the diversion disk 34, the diversion pipes 35 and the space are sequentially connected. The rotating pipe 33 is rotatably connected to the connecting pipe 32. The driving mechanism is used to drive the diversion disk 34 to rotate.

[0029] like Figure 6 As shown, the control module 5 includes a pressure valve 51 and a flow valve 52 installed on the connecting pipe 32, and a temperature sensor 53 installed on the material placement platform 36. The temperature sensor 53 is located in the space and senses the temperature in the space to adjust the pressure valve 51 and the flow valve 52 to control the pressure and flow rate of helium supplied by the helium supplier 31.

[0030] When the operator needs to cool the wafer when performing ion beam etching, the operator first places the wafer on the placing table 36, and makes the back of the wafer adhere to the placing table 36. Through the action of the positioning rod 2, positioning can be realized when the wafer is placed. After the wafer is placed, the operator can operate the limiting mechanism 6 to limit the wafer on the placing table 36. After the wafer is limited, the operator can start the helium gas supplier 31. The helium gas supplier 31 supplies helium gas. The supplied helium gas successively passes through the connecting pipe 32, the rotating pipe 33, the flow distribution disc 34, the flow distribution pipe 35, and reaches the space formed by the placing table 36 and the rotating plate 38. The helium gas entering the space can reduce the temperature of the placing table 36, and finally flows out from the gas outlet pipe 37. The gas outlet pipe 37 can be in communication with the gas inlet pipe of the helium gas supplier 31, so that the helium gas can be recycled. The flow distribution pipe 35 is arranged to uniformly distribute the helium gas into the space formed by the placing table 36 and the rotating plate 38, so that the temperature distribution of the placing table 36 is uniform, thereby uniformly and quickly removing the temperature generated on the back of the wafer. Through the action of the control module 5, the temperature sensor 53 of the control module 5 can detect the temperature in the space formed by the placing table 36 and the rotating plate 38, and adjust the pressure and flow of the helium gas according to the preset cooling requirement. That is, the opening degree of the pressure valve 51 and the flow valve 52 is adjusted by the temperature sensor 53, so that the temperature in the space formed by the placing table 36 and the rotating plate 38 is adjusted in real time, and the temperature in the space is kept constant, thereby ensuring that the temperature of the back of the wafer is constant. Through the arrangement of the rotating mechanism 4, the flow distribution disc 34 can be rotated, so that the flow distribution pipe 35 and the rotating plate 38 are rotated, and the helium gas is uniformly distributed into the space formed by the placing table 36 and the rotating plate 38.

[0031] As shown in Figure 2 , the mounting frame 1 comprises a plurality of first supports 11 arranged on the ion beam etching equipment and a mounting block 12 fixedly connected with the first supports 11. The positioning rod 2 is arranged on the upper portion of the mounting block 12, and the placing table 36 is arranged on the inner side of the mounting block 12.

[0032] Among them, the first support 11 is fixedly connected with the ion beam etching equipment, the mounting block 12 is in the shape of a ring, the positioning rod 2 is arranged on the upper portion of the mounting block 12, and the placing table 36 is arranged on the inner side of the mounting block 12.

[0033] As shown in Figure 5 , the rotating mechanism 4 comprises a first motor 41 arranged on the mounting frame 1, a first gear 42 arranged on the output shaft of the first motor 41, and a second gear 43 arranged on the outer wall of the flow distribution disc 34. The first gear 42 is engaged with the second gear 43.

[0034] The operator can start the first motor 41. The output shaft of the first motor 41 rotates, which drives the first gear 42 to rotate. The rotation of the first gear 42 drives the second gear 43 to rotate. The rotation of the second gear 43 drives the distribution plate 34. Thus, the rotation of the distribution plate 34 drives the distribution pipe 35 and the rotating plate 38 to rotate. When the helium gas enters the space formed by the material placement stage 36 and the rotating plate 38 through the distribution pipe 35, the helium gas at the distribution pipe 35 will rotate along with it. Thus, the helium gas will enter the space evenly and distributed, so that the temperature in the space is evenly distributed, thereby achieving a relatively uniform temperature on the back side of the wafer.

[0035] like Figure 7 As shown, four positioning rods 2 are arranged in a 360° rotating array along the axis of the material placement platform 36. Limiting mechanisms 6 are provided on two opposing positioning rods 2. The limiting mechanism 6 includes a rotating seat 61 on the positioning rod 2, a rotating component 64 rotatably connected to the rotating seat 61, a second bracket 62 fixedly connected to the rotating seat 61, and a second motor 63 fixedly connected to the second bracket 62. The output shaft of the second motor 63 is connected to the rotation shaft of the rotating component 64.

[0036] When the operator places the wafer onto the placement stage 36, the positioning rod 2 ensures that the wafer and the placement stage 36 are aligned on the same axis. The specific operation of the limiting mechanism 6 is as follows: the operator can start the second motor 63, which drives the rotating component 64 to rotate closer to the wafer. The rotating component 64 presses the wafer, thereby limiting the wafer on the placement stage 36. When it is necessary to release the limit, the operator starts the second motor 63 to rotate the output shaft of the second motor 63 in the opposite direction, causing the rotating component 64 to rotate away from the wafer, thereby releasing the limit.

[0037] In summary, the helium gas is uniformly distributed into the space formed by the material placing table 36 and the rotating plate 38 through the setting of the shunt pipe 35, the temperature distribution of the material placing table 36 is uniform, the temperature generated on the back of the wafer is uniformly and quickly taken away, so that the wafer maintains a stable temperature in the high-precision processing process such as ion beam etching, and then the cooling is realized by the helium gas, the helium gas is an inert gas, friendly to the environment, and has excellent heat conduction performance, so that the cooling process is more efficient, thereby reducing the energy consumption, through the action of the control module 5, the temperature sensor 53 of the control module 5 can detect the temperature in the space formed by the material placing table 36 and the rotating plate 38, and adjust the pressure and flow of the helium gas according to the preset cooling requirement, that is, the opening degree of the pressure valve 51 and the flow valve 52 is adjusted through the temperature sensor 53, so that the temperature in the space formed by the material placing table 36 and the rotating plate 38 is adjusted in real time, and the temperature in the space is kept constant, so that the back of the wafer is kept in an ideal temperature range, and the shunt disc 34 is rotated through the setting of the rotating mechanism 4, so that the shunt pipe 35 and the rotating plate 38 are rotated, and the helium gas is uniformly distributed into the space formed by the material placing table 36 and the rotating plate 38.

[0038] As shown in Figure 8 The mounting frame 1 is fixedly connected with a supporting piece 7, and the supporting piece 7 is rotationally connected with the rotating pipe 33.

[0039] The supporting piece 7 can make the rotating pipe 33 rotate more stably.

[0040] In the description of the present specification, the description of the terms "one embodiment", "some embodiments", "an example", "a specific example", or "some examples" means that the specific features, structures, materials or characteristics described in combination with the embodiment or example are included in at least one embodiment or example of the present application. In the present specification, the illustrative description of the above terms does not necessarily mean the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0041] The above-described embodiments only express several implementation manners of the present application, the description is more specific and detailed, but it cannot be understood as a limitation on the scope of the present application. It should be noted that, for ordinary skilled persons in the art, without departing from the concept of the present application, a number of modifications and improvements can be made, which all belong to the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the appended claims.

Claims

1. A cooling device for ion beam etching wafers, characterized in that, The device includes a mounting frame, a cooling mechanism for cooling a wafer, a control module disposed on the cooling mechanism, a plurality of positioning rods disposed on the mounting frame for positioning the wafer, a limiting mechanism disposed on at least one of the positioning rods, and a rotating mechanism disposed between the mounting frame and the cooling mechanism. The cooling mechanism includes a helium supply unit, a material placement platform mounted on the mounting frame, multiple outlet pipes evenly spaced and connected on the side wall of the material placement platform, a rotating plate rotatably connected to the lower part of the material placement platform, multiple diversion pipes mounted on the rotating plate, a diversion disk fixedly connected to each diversion pipe, a rotating pipe mounted on the diversion disk, and a connecting pipe mounted on the helium supply unit. A space is formed between the rotating plate and the material placement platform. The connecting pipe, the rotating pipe, the diversion disk, the diversion pipe, and the space are sequentially connected. The rotating pipe is rotatably connected to the connecting pipe. The rotating mechanism is used to drive the diversion disk to rotate.

2. The cooling device according to claim 1, characterized in that, The mounting frame includes a plurality of first supports disposed on the ion beam etching equipment and a mounting block fixedly connected to the first supports. The positioning rod is disposed on the upper part of the mounting block, and the material placement stage is disposed on the inner side of the mounting block.

3. The cooling device according to claim 1, characterized in that, The rotating mechanism includes a first motor mounted on the mounting bracket, a first gear mounted on the output shaft of the first motor, and a second gear mounted on the outer wall of the distributor plate, wherein the first gear meshes with the second gear.

4. The cooling device according to claim 1, characterized in that, The control module includes a pressure valve and a flow valve installed on the connecting pipe, and a temperature sensor installed on the material placement platform. The temperature sensor is located in the space and senses the temperature in the space to adjust the pressure valve and the flow valve, thereby controlling the pressure and flow rate of the helium supplied by the helium supplier.

5. The cooling device according to claim 1, characterized in that, The positioning rods are provided in four positions, arranged in a 360° rotating array along the axis of the material placement platform, with limit mechanisms provided on two opposing positioning rods.

6. The cooling device according to claim 5, characterized in that, The limiting mechanism includes a rotating seat mounted on the positioning rod, a rotating component rotatably connected to the rotating seat, a second bracket fixedly connected to the rotating seat, and a second motor fixedly connected to the second bracket. The output shaft of the second motor is connected to the rotation shaft of the rotating component.

7. The cooling device according to claim 1, characterized in that, A support member is fixedly connected to the mounting bracket, and the support member is rotatably connected to the rotating tube.

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