Horizontal hot filament CVD (Chemical Vapor Deposition) process cavity and vacuumizing device
By designing a horizontal hot-wire CVD process chamber and a vacuum device, the problem of uneven film thickness caused by uneven gas distribution in the silicon wafer processing chamber was solved, achieving uniformity of silicon wafer coating and improving the finished quality of solar cells.
Patent Information
- Application Number
- CN202520049781.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-09
- Publication Date
- 2026-01-23
- Estimated Expiration
- 2035-01-09
AI Technical Summary
In existing technologies, uneven gas distribution within the silicon wafer processing chamber leads to uneven film thickness in silicon wafer coating, affecting the quality of the finished solar cell.
A horizontal hot-wire CVD process chamber and vacuum device are designed. By performing vacuum treatment in the process chamber before coating, the gas in the process chamber is extracted by a stacked pump mechanism composed of multi-stage pumps and molecular pumps to ensure gas uniformity. This, together with the pyrolysis mechanism and conveyor belt, achieves uniform coating of silicon wafers.
Vacuuming processes prevent uneven gas distribution within the process chamber, ensuring uniform coating thickness on the silicon wafer surface and improving the final product quality of the solar cells.
Smart Images
Figure CN223823694U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model belongs to solar cell production and manufacturing technical field, concretely relates to a horizontal hot wire CVD process cavity and vacuumizing device. BACKGROUND
[0002] With the rapid progress and development of photovoltaic technology level, the conversion efficiency of crystalline silicon solar cell is improved year by year, and the conversion efficiency of monocrystalline silicon solar cell has reached more than 22% in the current photovoltaic industry. Because HJT (silicon-based heterojunction) solar cell has the advantages of short manufacturing process, low preparation process temperature, high conversion efficiency, high open circuit voltage, low temperature coefficient, no light-induced degradation (LID), no electrical degradation (PID), suitable for using thin silicon wafer to make bendable battery assembly, more power generation, etc., it has been paid more and more attention.
[0003] The existing heterojunction solar cell preparation process includes (1) texturing cleaning, (2) amorphous silicon deposition coating, (3) TCO deposition, (4) screen printing electric level. When depositing and coating amorphous silicon, when using hot wire CVD (hot wire chemical vapor deposition) equipment for deposition and coating, the uniformity of film thickness is crucial to the quality of the battery piece, and the uniformity of film thickness is greatly affected by the uniformity of gas and the cleanliness of the chamber.
[0004] Therefore, a horizontal hot wire CVD process cavity and vacuumizing device is designed to solve the technical problem that the uneven distribution of gas in the silicon wafer processing process cavity leads to uneven film thickness of the silicon wafer coating, thereby affecting the quality of the final battery piece.
[0005] It should be noted that the above information disclosed in the background section is only used to understand the background of the present application, and therefore, the above description is not considered to constitute prior art information. CONTENT OF THE UTILITY MODEL
[0006] The present disclosure provides at least a horizontal hot wire CVD process cavity and vacuumizing device.
[0007] In a first aspect, the present disclosure provides a horizontal hot wire CVD process cavity, comprising:
[0008] An upper cover is pressed on the upper end surface of the process cavity; wherein
[0009] The lower end surface of the process cavity is connected with the vacuum pipe;
[0010] A pyrolysis mechanism is arranged inside the upper cover, and is adapted to pyrolyze the process gas introduced into the upper cover and coat the silicon wafer arranged in the process cavity; and
[0011] The vacuumizing device comprises:
[0012] The stacked pump mechanism is located on one side of the process chamber; among which...
[0013] The two ends of the vacuum tube are connected to the stacked pump mechanism and the process chamber, respectively; wherein
[0014] The stacked pump mechanism is adapted to use a vacuum tube to extract gas from the process chamber after startup to create a vacuum in the process chamber.
[0015] In one optional implementation, the stacked pump mechanism includes:
[0016] The multi-stage pump housing has an air extraction inlet on its upper surface.
[0017] The air extraction inlet is connected to one end of the vacuum tube; and
[0018] At least three pumps of different levels are located in a multi-stage pump housing and are stacked one on top of the other.
[0019] The pumps of each level, from top to bottom, are: Level 1 pump, Level 2 pump, and Level 3 pump, and all pumps are interconnected.
[0020] In one optional embodiment, the pyrolysis mechanism includes:
[0021] Several sets of heating wires are evenly arranged inside the top cover;
[0022] The ends of each group of hot wires form corresponding hot wire terminals that are connected to an external power source.
[0023] In one optional embodiment, a conveyor belt is provided inside the process cavity, and a plurality of carrier plates are disposed on the conveyor belt; wherein
[0024] Each silicon wafer is placed in its respective carrier for processing.
[0025] In one optional embodiment, a plurality of drive rollers are provided on the inner side of the conveyor belt; wherein
[0026] Each of the aforementioned drive rollers is connected to the bearing of the process cavity; and
[0027] One end of each of the aforementioned drive rollers passes through the process cavity and is connected via a drive assembly.
[0028] In one optional implementation, the transmission assembly includes:
[0029] Several transmission wheels are respectively fitted onto the end of the corresponding transmission roller located outside the process chamber; among them
[0030] A drive belt is fitted between each pair of adjacent drive wheels; and
[0031] A drive motor is mounted on the outer wall of the process chamber, and the output end of the drive motor is connected to one of the transmission rollers.
[0032] In one optional embodiment, a support is provided below the process cavity; and
[0033] The support frame is reinforced with several reinforcing ribs.
[0034] Secondly, embodiments of this disclosure also provide a vacuum pumping device, comprising:
[0035] The stacked pump mechanism is located on one side of the process chamber;
[0036] The vacuum tube is connected at both ends to the stacked pump mechanism and the process chamber, respectively; among which...
[0037] The stacked pump mechanism is adapted to use a vacuum tube to extract gas from the process chamber after startup to create a vacuum in the process chamber.
[0038] In one optional implementation, the stacked pump mechanism includes:
[0039] The multi-stage pump housing has an air extraction inlet on its upper surface.
[0040] The air extraction inlet is connected to one end of the vacuum tube; and
[0041] At least three pumps of different levels are located in a multi-stage pump housing and are stacked one on top of the other.
[0042] The pumps of each level, from top to bottom, are: Level 1 pump, Level 2 pump, and Level 3 pump, and all pumps are interconnected.
[0043] In one alternative embodiment, a molecular pump is provided on the vacuum tube.
[0044] The beneficial effect of this utility model is that the vacuum device and process chamber can avoid uneven gas distribution in the process chamber from affecting the coating thickness on the silicon wafer surface during subsequent coating processes by performing vacuum treatment on the process chamber before the silicon wafer is coated.
[0045] Other features and advantages of this invention will be set forth in the description which follows, and will be apparent in part from the description, or may be learned by practicing the invention. The objectives and other advantages of this invention are realized and obtained through the structures particularly pointed out in the description, claims, and drawings.
[0046] To make the above-mentioned objectives, features and advantages of this utility model more apparent and understandable, preferred embodiments are described in detail below with reference to the accompanying drawings. Attached Figure Description
[0047] To more clearly illustrate the specific embodiments of this utility model or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this utility model. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.
[0048] Figure 1 An overall front view provided for an embodiment of this disclosure;
[0049] Figure 2 This is a front view of the interior of a multi-stage pump housing provided in an embodiment of this disclosure;
[0050] Figure 3 Overall bottom view provided for embodiments of this disclosure;
[0051] Figure 4 This is a schematic diagram of the internal cross-sectional structure of the upper cover provided in an embodiment of this disclosure.
[0052] Figure 5 This is a schematic diagram of the overall three-dimensional structure provided for an embodiment of this disclosure.
[0053] Figure 6 Provided for the embodiments of this disclosure Figure 5 Enlarged schematic diagram of the middle section structure.
[0054] In the picture:
[0055] 1. Stacked pump mechanism; 10. Multistage pump housing box; 100. Air extraction inlet; 101. Primary pump; 102. Secondary pump; 103. Tertiary pump; 11. Vacuum tube; 12. Molecular pump;
[0056] 2. Process chamber; 20. Transmission assembly; 200. Transmission wheel; 201. Transmission belt; 202. Transmission roller; 203. Drive motor; 21. Support; 22. Reinforcing rib; 23. Conveyor belt;
[0057] 3. Top cover; 30. Pyrolysis mechanism; 300. Hot wire; 301. Hot wire terminal;
[0058] 4. Slides. Detailed Implementation
[0059] To make the objectives, technical solutions, and advantages of the embodiments of this utility model clearer, the technical solutions of this utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this utility model, not all embodiments. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the protection scope of this utility model.
[0060] In this document, when it is mentioned that a first component is located on a second component, this can mean that the first component can be directly formed on the second component, or that a third component can be inserted between the first and second components. Furthermore, in the accompanying drawings, the thickness of the components may be exaggerated or reduced for the purpose of effectively describing the technical content.
[0061] In this document, when an element or layer is referred to as “located,” “joined to,” “connected to,” “attached to,” or “coupled to” another element or layer, it may be directly located, joined, connected, attached to, or coupled to the other element or layer, or there may be intermediate elements or layers present. Conversely, when an element is referred to as “directly on another element or layer,” “directly joined to,” “directly connected to,” “directly attached to,” or “directly coupled to” another element or layer, there may be no intermediate elements or layers present. Other terms used to describe relationships between elements should be interpreted in a similar manner (e.g., “between” versus “directly between,” “adjacent” versus “directly adjacent,” etc.). As used herein, the term “and / or” includes any and all combinations of one or more of the related listed items.
[0062] In this document, exemplary embodiments of the present disclosure will be described in more detail with reference to the accompanying drawings. As used herein, expressions such as “at least one of…” modify the entire list of elements when following a list of elements, rather than individual elements in the list. For example, the expression “at least one of a, b, and c” should be understood to include only a, only b, only c, both a and b, both a and c, both b and c, or all of a, b, and c.
[0063] The terminology used herein is for the purpose of describing specific exemplary configurations only and is not intended to be limiting. As used herein, the singular articles “a,” “an,” and “the” may also be intended to include plural forms unless otherwise clearly stated herein. The terms “comprising,” “including,” and “having” are inclusive and thus specify the presence of features, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, steps, operations, elements, components, and / or combinations thereof. The method steps, processes, and operations described herein should not be construed as requiring them to be performed in the specific order discussed or shown, unless specifically identified as such. Additional or alternative steps may be employed.
[0064] As used herein, the phrases “in one embodiment,” “according to one embodiment,” “in some embodiments,” etc., generally refer to the fact that a particular feature, structure, or characteristic following the phrase can be included in at least one embodiment of this disclosure. Therefore, a particular feature, structure, or characteristic can be included in more than one embodiment of this disclosure, such that these phrases do not necessarily refer to the same embodiment. As used herein, the terms “example,” “exemplary,” etc., are used to “serve as an example, instance, or illustration.” Any implementation, aspect, or design described herein as “example” or “exemplary” is not necessarily to be construed as preferred or superior to other implementations, aspects, or designs. Rather, the use of the terms “example,” “exemplary,” etc., is intended to present concepts in a specific manner.
[0065] Research has revealed that the existing heterojunction solar cell fabrication process includes (1) texturing and cleaning, (2) amorphous silicon deposition, (3) TCO deposition, and (4) screen printing of electrodes. When performing amorphous silicon deposition, the uniformity of the film thickness is crucial to the quality of the solar cell when using hot-wire CVD (hot-wire chemical vapor deposition) equipment. This uniformity is significantly influenced by gas uniformity and chamber cleanliness.
[0066] Based on the above research, this disclosure provides a vacuuming device and a horizontal hot-wire CVD process chamber. By performing vacuuming treatment on the process chamber before coating the silicon wafer, the uneven gas distribution in the process chamber is avoided, which would affect the coating thickness generated on the silicon wafer surface during subsequent coating processes.
[0067] The shortcomings of the above solutions are the result of the inventor's practical experience and careful research. Therefore, the discovery process of the above problems and the solutions proposed in this disclosure should be considered as the inventor's contribution to this disclosure.
[0068] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.
[0069] The following detailed description, with reference to the accompanying drawings, describes some embodiments of the present invention. Unless otherwise specified, the following embodiments and features can be combined with each other.
[0070] In some embodiments, such as Figure 1As shown, before the silicon wafer in the process chamber 2 is coated, the molecular pump 12 fixed on the lower end face of the process chamber 2 is started first. The molecular pump 12 is used to first extract the water vapor and other molecules in the process chamber 2, that is, to clean the process chamber 2. Then, the pumps in the multi-stage pump box 10 are started to sequentially evacuate the process chamber 2 through the vacuum tube 11 until the vacuum degree in the process chamber 2 reaches the required coating conditions.
[0071] In some embodiments, such as Figure 2 and Figure 3 As shown, the first to third stage pumps are stacked in sequence in the multi-stage pump placement box 10, and the three pumps are connected together. After the molecular pump 12 finishes working, the three pumps are started in sequence to evacuate the process chamber.
[0072] In some embodiments, such as Figure 4 As shown, a top cover 3 is added above the process chamber 2. The inside of the top cover 3 is hollowed out, and several sets of hot wires 300 are evenly arranged inside the top cover 3. The hot wire terminals 301 of each set of hot wires 300 are led out and connected to an external power source. When current passes through the hot wires, the free electrons and positive ions in the hot wires are heated by the current. These electrons and ions collide frequently inside the hot wires, causing electrical energy to be converted into heat energy. At the same time, a gas tube is inserted into the top cover 3 (this process is a common technical means in the existing technology, so it is not shown in the figure) to introduce industrial gas into the inside of the top cover 3. The inside of the top cover 3 is connected to the inside of the process chamber 2. The industrial gas is pyrolyzed by the heat generated by the hot wires 300 and finally deposited on the silicon wafer in the process chamber 2 to complete the deposition film.
[0073] In some embodiments, such as Figure 5 and Figure 6 As shown, during the pyrolysis coating process, the drive motor 203 is started synchronously, and its output end drives one of the transmission rollers 202 to rotate. Since each adjacent transmission wheel 200 is fitted with a transmission belt 201, as the corresponding transmission wheel 200 rotates, it drives each transmission belt 201 to rotate, thereby causing each transmission roller 202 to rotate synchronously, so that each silicon wafer arranged on the carrier 4 on the conveyor belt 23 flows through the process cavity 2, so that each silicon wafer is coated evenly.
[0074] In the description of the embodiments of this utility model, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances.
[0075] In the description of this utility model, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicating orientation or positional relationships, are based on the orientation or positional relationships shown in the accompanying drawings and are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this utility model. Furthermore, terms such as "first," "second," and other numerical terms used herein do not imply order or sequence unless expressly indicated herein. Therefore, without departing from the teachings of the exemplary embodiments, the first element, component, region, layer, or segment discussed above may be referred to as the second element, component, region, layer, or segment.
[0076] Spatially relative terms, such as “inside,” “outside,” “below,” “below,” “down,” “above,” “up,” etc., may be used herein to describe the relationship between one element or feature illustrated in the figures and another element or feature. In addition to the orientations depicted in the figures, spatially relative terms may be intended to cover different orientations of the device in use or operation. For example, if the device in the figure is flipped, an element described as “below” or “below” other elements or features would be oriented as “above” other elements or features. Thus, the example term “below” can cover both above and below orientations. The device may be oriented in other ways (rotated 90 degrees or in other orientations), and the spatially relative descriptors used herein are interpreted accordingly.
[0077] In the above discussion, unless otherwise stated, when used to describe numerical values, the terms “about,” “approximately,” “basically,” etc., indicate a change of + / - 10% in that value.
[0078] Based on the above-described preferred embodiments of this utility model, and through the foregoing description, those skilled in the art can make various changes and modifications without departing from the technical concept of this utility model. The technical scope of this utility model is not limited to the contents of the specification, but must be determined according to the scope of the claims.
Claims
1. A horizontal hot-wire CVD process chamber, characterized in that, include: The top cover (3) is pressed onto the upper end face of the process cavity (2); in The lower end face of the process chamber (2) is connected to the vacuum tube (11); The pyrolysis mechanism (30) is located inside the upper cover (3) and is suitable for pyrolyzing the process gas introduced into the upper cover (3) to deposit a film on the silicon wafer set in the process chamber (2); as well as Vacuum pumping device, comprising: The stacked pump mechanism (1) is located on one side of the process chamber (2); in The two ends of the vacuum tube (11) are connected to the stacked pump mechanism (1) and the process chamber (2), respectively; wherein The stacked pump mechanism (1) is adapted to use a vacuum tube (11) to extract gas from the process chamber (2) after startup so as to create a vacuum in the process chamber (2).
2. The horizontal hot-wire CVD process chamber as described in claim 1, characterized in that, The stacked pump mechanism (1) includes: A multistage pump housing (10) has an air extraction inlet (100) on its upper surface, wherein... The air extraction inlet (100) is connected to one end of the vacuum tube (11); and At least three pumps of different levels are located in a multi-stage pump housing (10) and are stacked in an upper and lower layer; The pumps of each level are arranged from top to bottom as follows: Level 1 pump (101), Level 2 pump (102), and Level 3 pump (103), and each pump is interconnected.
3. The horizontal hot-wire CVD process chamber as described in claim 1, characterized in that, The pyrolysis mechanism (30) includes: Several sets of heating wires (300) are evenly arranged inside the upper cover (3); The ends of each group of hot wires (300) form corresponding hot wire terminals (301) that are connected to an external power source.
4. The horizontal hot-wire CVD process chamber as described in claim 3, characterized in that, The process chamber (2) is equipped with a conveyor belt (23), and a plurality of carrier plates (4) are arranged on the conveyor belt (23); wherein Each silicon wafer is placed in its corresponding carrier (4) for processing.
5. The horizontal hot-wire CVD process chamber as described in claim 4, characterized in that, The inner side of the conveyor belt (23) is provided with a plurality of drive rollers (202); wherein Each of the aforementioned drive rollers (202) is connected to the bearing of the process chamber (2); and One end of each of the drive rollers (202) passes through the process chamber (2) and is connected by a drive assembly (20).
6. The horizontal hot-wire CVD process chamber as described in claim 5, characterized in that, The transmission assembly (20) includes: Several transmission wheels (200) are respectively fitted onto the end of the corresponding transmission roller (202) located outside the process chamber (2); among them A transmission belt (201) is fitted between each pair of adjacent transmission wheels (200); and A drive motor (203) is installed on the outer wall of the process chamber (2), and the output end of the drive motor (203) is connected to one of the transmission rollers (202).
7. The horizontal hot-wire CVD process chamber as described in claim 1, characterized in that, A support (21) is provided below the process cavity (2); and The bracket (21) is provided with several reinforcing ribs (22) for reinforcement.
8. A vacuum pumping device, characterized in that, include: The stacked pump mechanism (1) is located on one side of the process chamber (2); The vacuum tube (11) is connected at both ends to the stacked pump mechanism (1) and the process chamber (2), respectively. in The stacked pump mechanism (1) is adapted to use a vacuum tube (11) to extract gas from the process chamber (2) after startup so as to create a vacuum in the process chamber (2).
9. The vacuum pumping device as described in claim 8, characterized in that, The stacked pump mechanism (1) includes: A multistage pump housing (10) has an air extraction inlet (100) on its upper surface, wherein... The air extraction inlet (100) is connected to one end of the vacuum tube (11); and At least three pumps of different levels are located in a multi-stage pump housing (10) and are stacked in an upper and lower layer; The pumps of each level are arranged from top to bottom as follows: Level 1 pump (101), Level 2 pump (102), and Level 3 pump (103), and each pump is interconnected.
10. The vacuum pumping device as described in claim 9, characterized in that, A molecular pump is installed on the vacuum tube (11).