Reaction chamber for thin film deposition and thin film deposition equipment

Abstract

The utility model provides a reaction chamber for thin film deposition and thin film deposition equipment. A movable heating assembly (1) and a hollow shielding ring (4) are arranged in the reaction chamber; the hollow shielding ring (4) is fixed in the reaction chamber in a suspended manner, the periphery of the hollow shielding ring (4) is connected with the reaction chamber in a matched manner, and the hollow shielding ring divides the reaction chamber into a storage part (2) positioned above the reaction chamber and a storage part (9) positioned below the reaction chamber; the movable heating assembly (1) comprises a heating piece (11), a rotating shaft (12) and a driving part (13), and the driving part (13) is used for driving the rotating shaft (12) to rotate; the heating piece (11) is connected with the rotating shaft (12) so that the heating piece (11) can do circumferential rotating motion along with rotation of the rotating shaft (12). Therefore, the reaction chamber can be more fully baked and heated after preventive maintenance, the baking efficiency of the reaction chamber is greatly improved, and the overall recovery time is shortened.

Description

TECHNICAL FIELD

[0001] The utility model relates to thin film deposition technical field especially relates to a kind of reaction chamber and thin film deposition equipment for thin film deposition. BACKGROUND

[0002] To prevent the occurrence of equipment failure, ensure the normal operation of equipment, the process chamber of aluminum copper physical thin film deposition machine needs to be periodically preventive maintenance, after replacing kits (including hollow shielding ring, cover ring, shutter piece etc.), process chamber also needs to be cleaned to remove residual deposits and impurities. After preventive maintenance, execute machine recovery program (such as PM-Macro), ensure that the equipment returns to the best working condition after maintenance, while reducing the performance decline of equipment caused by maintenance. Machine recovery time is usually 15-25 hours, and the baking of reaction chamber occupies 8 hours. The main purpose of baking is to remove the water vapor and impurities in the newly installed cleaning kits by 150-300 DEG C high temperature baking, to ensure that the chamber leak rate is not affected by these water vapor and impurities, and to ensure that the kits remain in a state of thermal stability in a high temperature environment exceeding the process temperature of the chamber, so that the physical or chemical properties of the kits do not change due to temperature changes, causing unstable process parameters and abnormal process.

[0003] In the prior art, the reaction chamber is usually baked for a long time at a certain power by heating lamp, but due to the process design of the chamber, the kits will block the heating lamp located at the bottom of the chamber after being installed in the chamber, so that the heating lamp can only radiate straight to the back of the kits, and the efficiency of heat transfer to the front of the kits and the entire chamber is not high, which makes the chamber recovery time too long and affects the utilization rate of the chamber at full production.

[0004] Therefore, it is necessary to provide an equipment for improving the baking efficiency of the chamber and greatly reducing the chamber recovery time. SUMMARY

[0005] In view of the above-mentioned shortcomings of the prior art, the purpose of the utility model is to provide a reaction chamber and thin film deposition equipment for thin film deposition to solve the problems in the prior art.

[0006] To achieve the above-mentioned purposes and other related purposes, the utility model is obtained by the following technical solutions.

[0007] The utility model provides a kind of reaction chamber for thin film deposition, it is characterized in that, hollow shielding ring and movable heating assembly are equipped in the reaction chamber;The hollow shielding ring is suspended and fixed in the reaction chamber, and outer periphery is matched with the connection of reaction chamber, the hollow shielding ring is divided into the reserve part located above it and the reserve part located below it;The movable heating assembly includes heating piece, rotating shaft and driving part, the driving part is used to drive the rotation of rotating shaft;The heating piece is connected with the rotating shaft, so that the heating piece rotates with the rotation of rotating shaft;The rotating shaft is arranged through the reaction chamber;The heating piece is arranged in the reserve part and is close to the reserve part.

[0008] In a preferred embodiment, the heating piece is rotated to form a working position and a non-working position, when in the non-working position, the heating piece is not exposed in the hollow of the hollow shielding ring;When in the working position, the heating piece is exposed in the hollow of the hollow shielding ring.

[0009] In a preferred embodiment, the driving part is arranged outside the reaction chamber.

[0010] In a preferred embodiment, the driving part further includes a lifting driving part, and the lifting driving part is used to drive the rotating shaft to lift in the reserve part.

[0011] In a preferred embodiment, the top end of the rotating shaft extends in the radial direction to form a support arm, and the support arm is connected with the heating piece.

[0012] In a preferred embodiment, the rotating shaft is sealingly connected with the reaction chamber.

[0013] In a preferred embodiment, a bellows for sealing connection is arranged on the rotating shaft.

[0014] In a preferred embodiment, a pedestal for carrying the substrate material to be deposited is further arranged in the reaction chamber, and the pedestal has a lifting function to enable the substrate material to be deposited to enter or exit the reserve part.

[0015] In a preferred embodiment, a cover ring is further arranged to match the hollow shielding ring.

[0016] In a preferred embodiment, a fixed heating piece is further arranged on the inner side wall of the reserve part.

[0017] In a preferred embodiment, the edge of the pedestal is further provided with a deposition ring matched with the cover ring.

[0018] The utility model further provides a thin film deposition equipment, which comprises the reaction chamber as described above.

[0019] The utility model provides a reaction chamber for thin film deposition and thin film deposition equipment has following beneficial effect:

[0020] Make the reaction chamber get more full baking heating after preventive maintenance, the baking efficiency of reaction chamber is greatly improved, the baking time of chamber in machine is shortened, the whole machine time is reduced, the higher the machine utilization rate is, also indirectly shorten the delivery time of product. BRIEF DESCRIPTION OF DRAWINGS

[0021] Figure 1 It is one of the cross-sectional view of the reaction chamber of the utility model.

[0022] Figure 2 It is the second cross-sectional view of the reaction chamber of the utility model.

[0023] Figure 3 It is the cross-sectional view of the movable heating assembly of the utility model.

[0024] Figure 4 It is the state diagram of heating piece in non-working position.

[0025] Figure 5 It is the state diagram of heating piece in working position.

[0026] Figures 6-7 It is the perspective view of the reaction chamber.

[0027] REFERENCE NUMERALS

[0028] 1 Movable heating assembly 11 Heating element 12 Rotary shaft 13 Driving component 131 Lifting driving part 132 Supporting table plate 133 Rotary driving part 14 Speed reducer 15 Supporting arm 16 Bellows 2 Reaction part 3 Base 4 Hollow shielding ring 5 Fixed heating element 51 Fixed heating part 52 Thermal insulation connecting part 6 Cover ring 7 Depositing ring 8 Shutter blade 9 Reserve part DETAILED DESCRIPTION

[0029] The following by specific embodiment explains the embodiment of the utility model of this technology personage can easily understand the other advantages and efficacy of the utility model from the content disclosed in this specification.

[0030] Please refer to Figures 1 to 7It is to be understood that the structures, proportions, sizes and the like shown in the drawings attached to the present specification are only used to cooperate with the content disclosed in the present specification, to be understood and read by those skilled in the art, and are not used to limit the limiting conditions of the implementation of the present application, so they do not have substantial technical significance. Any modification of the structure, change of the proportion relationship or adjustment of the size, without affecting the effect and purpose that can be achieved by the present application, should still fall within the scope of the technical content disclosed by the present application. At the same time, the terms such as "upper", "lower", "left", "right", "middle" and "one" in the present specification are only for the convenience of clear description, and are not used to limit the scope of the present application, and the change or adjustment of the relative relationship is also considered as the implementation of the present application without substantial changes in technical content.

[0031] As shown in Figure 1 The present application provides a reaction chamber for thin film deposition, which is provided with a movable heating assembly 1 and a hollow shielding ring 4 inside the reaction chamber; the hollow shielding ring 4 is suspended and fixed in the reaction chamber, and the outer periphery is matched and connected with the reaction chamber, the hollow shielding ring divides the reaction chamber into a reaction part 2 above it and a reserve part 9 below it; the movable heating assembly 1 includes a heating element 11, a rotating shaft 12 and a driving part 13, the driving part 13 is used to drive the rotating shaft 12 to rotate; the heating element 11 is connected with the rotating shaft 12, so that the heating element 11 rotates circumferentially with the rotation of the rotating shaft 12; the rotating shaft 12 penetrates through the reaction chamber; the heating element 11 is arranged in the reserve part 9 and close to the reserve part 2. The fixing mode between the hollow shielding ring 4 and the reaction chamber is detachable connection, and the connection mode includes but is not limited to buckle connection, threaded connection, which is convenient for replacement when preventive protection is performed in the chamber.

[0032] In a specific embodiment as shown in Figures 4-5 The heating element 11 rotates to form a working position and a non-working position, when in the non-working position, the heating element 11 does not expose to the hollow part of the hollow shielding ring 4; when in the working position, the heating element 11 exposes to the hollow part of the hollow shielding ring 4. When the chamber needs to be baked, the heating element 11 is rotated to the upper side of the base 3 to form the working position, as shown in Figure 5 , linear radiation is performed on the components above it, which improves the baking efficiency of the chamber and reduces the machine recovery time of the chamber. After the baking of the chamber is completed, the heating element 11 rotates away from the base 3 to form the non-working position, as shown in Figure 3 The rotation angle of the movable heating assembly 1 is controlled by controlling the rotation angle of the driving part 13. In a specific embodiment as shown in Figures 1-2 The driving part 13 is arranged outside the reaction chamber.

[0033] In one specific embodiment as shown in FIG. 1, the driving component 13 further comprises a lifting driving part 131 for driving the rotating shaft 12 to lift within the storage part 9. Figures 2-3

[0034] In one specific embodiment as shown in FIG. 1, the driving component 13 further comprises a lifting driving part 131 for driving the rotating shaft 12 to lift within the storage part 9. Figures 2-3

[0035] In one specific embodiment as shown in FIG. 1, the driving component 13 further comprises a lifting driving part 131 for driving the rotating shaft 12 to lift within the storage part 9. Figures 2-3

[0036] The design of the movable heating assembly 1 ingeniously combines lifting and rotating functions, achieving flexible control of the heating process. The core is to ensure that the heating element 11 can move efficiently within the reaction chamber through mechanical motion control to meet the heating needs of different positions.

[0037] The lifting function of the movable heating assembly 1 is realized by the lifting driving part 131, which is a lifting cylinder. The power output shaft of the lifting cylinder is connected to the support platform 132. Through the extension and retraction action of the cylinder, the support platform 132 can be lifted. The support platform 132 acts as a bearing platform, fixing and supporting other key components, including the rotating drive motor 133 and the heating element 11. When the lifting cylinder works, it not only drives the support platform 132 to lift, but also indirectly drives the rotating drive part 133, the rotating shaft 12 and the heating element 11 connected to the rotating drive part 133 to lift synchronously through the movement of the support platform 132. This design enables the heating element 11 to rise to the height of the working position when heating is needed. The lifting cylinder can control the lifting movement through air control valve, electric control valve, servo valve or proportional valve. In addition to the lifting function, the movable heating assembly 1 also has a rotating function, which is realized by the rotating drive part 133, which is an electric motor. The motor is fixed on the upper surface of the support platform 132, and its power output shaft is connected to the rotating shaft 12. The rotating movement of the motor is transmitted to the heating element 11 through the rotating shaft 12, thereby driving the heating element 11 to rotate to the working position or non-working position.

[0038] In one specific embodiment as shown in FIG. 1, the driving component 13 further comprises a lifting driving part 131 for driving the rotating shaft 12 to lift within the storage part 9. Figures 2-3 ​​​In the specific embodiment shown, the movable heating assembly 1 further comprises a speed reducer 14, an input shaft of the speed reducer 14 being connected with the rotary driving part 133, and an output shaft of the speed reducer 14 being connected with the rotary shaft 12. The speed reducer 14 is used to reduce the rotating speed and increase the torque.

[0039] In one specific embodiment, in order to realize accurate rotation control of the rotary driving part 133, the movable heating assembly 1 can be further improved, and these improvements shall belong to the protection scope of the present application. The improvements can be in the following ways, for example, a frequency converter or a direct current governor can be added to adjust the rotating speed of the motor; a servo motor or a stepping motor can be used to realize accurate position control in combination with an encoder feedback; or a motor controller can be added to adjust the output torque of the motor.

[0040] In one specific embodiment, the type of the heating element 11 includes but is not limited to a heating lamp or a resistance wire. In different embodiments, the heating lamp can be a spiral lamp tube, a strip-shaped lamp tube or a ring-shaped lamp tube, etc., and the resistance wire can be made of copper, nickel-chromium alloy or tungsten, and can be wound into a coil or a spiral shape or a strip-shaped structure, all of which belong to the protection scope of the present application. If the heating element 11 is a tungsten wire, the length of the tungsten wire is 20-30 cm, and the diameter of the tungsten wire is 2-3 cm. For example, the length of the tungsten wire can be 20-22 cm, 22-24 cm, 24-25 cm, 25-27 cm, 27-29 cm or 29-30 cm, and the width of the tungsten wire can be 2-2.5 cm or 2.5-3.0 cm. The power of the tungsten wire can be adjusted, and the power can reach 1350 KWS. When the tungsten wire is in operation, 90% power or 80% power can be adjusted and used to target different chamber environments. The size of the tungsten wire herein is only an example, and is not intended to limit the protection scope of the present application. Those skilled in the art can reasonably set the length and diameter of the tungsten wire according to the actual situation, so that the tungsten wire can bake the reaction part 2 at a certain power, while ensuring the baking effect and ensuring that it is within the range allowed by the equipment and process.

[0041] In one specific embodiment, the power of the heating element 11 is adjustable.

[0042] In one specific embodiment as shown, Figures 1-2 In the specific embodiment shown, the reaction chamber further comprises a susceptor 3 arranged in the reaction chamber and used to carry the substrate material to be deposited, the susceptor 3 having a lifting function to enable the substrate material to be deposited to enter or exit the reaction part 2.

[0043] In one specific embodiment as shown, Figures 2-3In the specific embodiment shown, a support arm 15 extends radially from the top of the rotating shaft 12, and the support arm 15 is connected to the heating element 11. The function of the support arm 15 is twofold: firstly, to support the heating element 11 and ensure its stable fixation; secondly, through its extension structure, to extend the position of the heating element 11 so that it can reach the required working area, thereby meeting specific heating requirements. The extension length of the support arm 15 can be adjusted according to the actual application scenario to adapt to different heating ranges and positional requirements. The height of the support arm 15 is lower than the hollow shielding ring 4 to prevent collision between the support arm 15 and the hollow shielding ring 4. During baking in the reaction chamber, the height of the support arm 15 should be higher than the base 3 and lower than the hollow shielding ring 4. After the chamber baking is completed, the height of the support arm 15 should be lower than the hollow shielding ring 4, and even lower than the base 3.

[0044] In a like Figures 2-3 In a more specific embodiment shown, both the support arm 15 and the rotating shaft 12 have a receiving space for accommodating wires, and the wires are electrically connected to the heating element 11 through the receiving space.

[0045] In a like Figures 2-3 In a more specific embodiment shown, a heat insulation layer is provided on the surface of the support arm 15 and / or the surface of the rotating shaft 12. In high-temperature baking environments, the wire material and its insulation layer are prone to aging, leading to a decline in wire performance. This aging and performance degradation can potentially cause electrical faults or even fires. To reduce the temperature of the wires, they are concealed within the support arm 15 and the rotating shaft 12 to avoid exposure, and a heat insulation layer is used. Specifically, the heat insulation layer can be made of a ceramic substrate.

[0046] In one specific embodiment, the rotating shaft 12 is sealed to the reaction chamber. Specifically, the sealing method can be a double-end mechanical seal, or a mechanical seal can be achieved by means of a bellows.

[0047] In a like Figure 2 In a more specific embodiment shown, a bellows 16 for sealing connection is fitted onto the rotating shaft 12. As the rotating shaft 12 rises and falls, the bellows 16 maintains good sealing performance through its own elasticity and extensibility combined with the sealing method, preventing outside air from entering the cavity 2 through the penetration at the bottom of the cavity 2, thus disrupting the vacuum environment and affecting subsequent processes.

[0048] In a like Figure 2 In the specific embodiment shown, a base 3 for supporting the substrate material to be deposited is provided in the reaction chamber. The base 3 has a lifting function so that the substrate material to be deposited can enter or exit the reaction section 2.

[0049] In a likeFigure 2 , 7 In the specific embodiment shown, the reaction chamber further includes a covering ring 6 that is matched with the hollow shielding ring 4.

[0050] In a like Figures 6-7 In a more specific embodiment shown, the edge of the base 3 is further provided with a deposition ring 7 that matches the covering ring 6.

[0051] The inner ring of the deposition ring 7 is detachably connected to the base 3, and the outer diameter of the deposition ring 7 is between the inner diameter of the cover ring 6 and the inner diameter of the hollow shielding ring 4. The detachable connection methods include, but are not limited to, snap-fit ​​and threaded connections. This design not only facilitates the installation and replacement of the deposition ring 7 but also allows for rapid adjustment of the equipment configuration according to different process requirements. The outer diameter of the deposition ring 7, between the inner diameter of the cover ring 6 and the inner diameter of the hollow shielding ring 4, ensures that the deposition ring 7 can be precisely positioned within the reaction chamber and work collaboratively with the cover ring 6 and the hollow shielding ring 4. During the process, the wafer is placed in the hollow space of the deposition ring 7. The deposition ring 7 is mainly used to control the area of ​​thin film deposition, preventing the thin film from growing on the inner wall of the reaction chamber or other areas where deposition is not desired.

[0052] During the thin film deposition process, the substrate 3 rises through the hollow portion of the hollow shielding ring 4 and enters the reaction section 2. The deposition ring 7 lifts the cover ring 6 and forms a snap-fit ​​with it. At this point, the cover ring 6 covers the edge region of the wafer. The key function of this design is to prevent the deposited film from growing on the wafer's edge and back side. During the thin film deposition process, deposits on the wafer edge and back side can cause various problems, such as uneven film thickness, particle contamination, or film peeling, which can seriously affect wafer yield and performance. The cover ring 6 effectively avoids these defects, thereby improving wafer flatness and edge stability. This design not only optimizes the uniformity of thin film deposition but also reduces potential defects caused by edge deposition, further improving the overall quality and efficiency of the thin film deposition process. The material of the cover ring 6 needs to have good high-temperature resistance, chemical corrosion resistance, and mechanical stability, including SUS420J2 stainless steel and 316L stainless steel.

[0053] In a like Figure 2 , 6In a more specific embodiment shown in ~7, the reaction chamber further includes a shutter plate 8 and a fixing rod fixed to the inner wall of the reaction chamber. The shutter plate 8 is pivotally connected to the fixing rod. The shutter plate 8 can rotate circumferentially around the fixing rod. During baking in the reaction chamber, the shutter plate 8 moves above the base 3 and closes to facilitate baking. At this time, the heating element 11 is located above the shutter plate 8. In another more specific embodiment, the shutter plate 8 can be pivotally connected to the fixing rod via a connecting rod. One end of the connecting rod is connected to the shutter plate 8, and the other end is pivotally connected to the fixing rod. During the thin film deposition process, the shutter plate 8 is opened, and the base 3 rises to the reaction section. After the thin film deposition process is completed, the base 3 descends to the storage section 9, and the shutter plate 8 is closed to cut off the supply of reaction gas and isolate the reaction chamber. After confirming that the environment inside the reaction chamber is stable, the shutter plate 8 is opened, and the wafer is removed from the reaction chamber by a robotic arm or other automated equipment.

[0054] In a like Figure 2 , 6 In the specific embodiment shown, a fixed heating element 5 is also provided on the inner sidewall of the storage section 9. In a more specific embodiment, there is at least one fixed heating element 5, which is positioned below the base 3.

[0055] In the above embodiments, the design of the reaction chamber further optimizes the configuration of the heating system to improve the efficiency and uniformity of the thin film deposition process. In addition to the movable heating component 1, the reaction chamber also incorporates at least one fixed heating element 5. These fixed heating components 5 are mounted on the inner wall of the cavity 2 and positioned below the base 3. This arrangement allows the fixed heating elements 5 to directly radiate heat the base 3 and the back of the hollow shielding ring 4 and the covering ring 6 above it. The number of fixed heating elements 5 can be flexibly configured according to actual process requirements; for example, it can be set to one, two, three, or four. The fixed heating elements 5 can be fixed to the inner wall or bottom of the cavity 2, achieving all-around heating of the interior of the reaction chamber through synergy with the movable heating component 1. The advantage of this heating method is that it significantly improves the baking efficiency of the entire chamber. By directly heating the area below the base 3 with the fixed heating element 5, combined with the heating above the base by the movable heating component 1, the reaction chamber can achieve a uniform temperature distribution in a short time. This not only shortens the chamber reactivation time but also improves the overall efficiency of the equipment, especially in processes that require rapid heating or long baking times.

[0056] In a more specific embodiment, the fixed heating element 5 includes a fixed heating part 51 and a heat-insulating connection part 52, one end of the heat-insulating connection part 52 is connected to the fixed heating part 51, and the other end is connected to the inner wall of the reaction chamber.

[0057] In a further specific embodiment, the type of the fixed heating element 5 includes, but is not limited to, a heating lamp or a resistance wire. In different embodiments, the heating lamp can be a spiral lamp tube, a strip lamp tube, or a ring lamp tube, etc., and the resistance wire can be made of copper, nickel-chromium alloy, or tungsten, wound into a coil, a spiral shape, or a strip structure, all of which fall within the protection scope of this application.

[0058] If the fixed heating element 51 is a tungsten wire, the length of the tungsten wire is 20-30 cm and the diameter is 2-3 cm. For example, the length of the tungsten wire can be 20-22 cm, 22-24 cm, 24-25 cm, 25-27 cm, 27-29 cm, or 29-30 cm, and the width can be 2-2.5 cm or 2.5-3.0 cm. The power of the tungsten wire is adjustable, up to 1350 kW. During operation, 90% or 80% power can be used to suit different chamber environments. The dimensions of the tungsten wire here are merely examples and are not intended to limit the scope of protection of this utility model. Those skilled in the art can also reasonably set the length and diameter of the tungsten wire according to actual conditions, so that the tungsten wire can bake the area above the base 3 with a certain power, ensuring the baking effect while remaining within the limits allowed by the equipment and process.

[0059] In a further specific embodiment, the heat-insulating connection portion 52 has a receiving space for accommodating a wire, through which the wire is electrically connected to the fixed heating portion 51. The heat-insulating connection portion 52 may be made of a ceramic substrate.

[0060] In a further specific embodiment, the power of the fixed heating element 51 is adjustable.

[0061] This invention also discloses a thin film deposition apparatus, including the reaction chamber as described above.

[0062] In summary, this invention, by introducing a movable heating component 1, enables the reaction chamber to simultaneously heat and bake both the reaction section 2 and the storage section 9 after preventative maintenance. This all-around heating method ensures that all parts of the reaction chamber receive sufficient heat, thereby significantly improving baking efficiency. Compared with existing technologies, this invention effectively shortens the baking time of the chamber during the re-run process, thus reducing the overall re-run time. Due to the reduced re-run time, the machine utilization rate is significantly improved, which not only enhances the equipment's production efficiency but also indirectly shortens product delivery time, bringing significant benefits to the company's production and operations.

[0063] The above embodiments are merely illustrative of the principles and effects of this utility model and are not intended to limit the scope of this utility model. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of this utility model. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in this utility model should still be covered by the claims of this utility model.

Claims

1. A reaction chamber for thin film deposition, characterized in that, The reaction chamber is provided with a movable heating component (1) and a hollow shielding ring (4); the hollow shielding ring (4) is suspended and fixed in the reaction chamber, and its outer periphery is matched and connected to the reaction chamber. The hollow shielding ring divides the reaction chamber into a reaction part (2) located above it and a storage part (9) located below it; the movable heating component (1) includes a heating element (11), a rotating shaft (12) and a driving component (13). The driving component (13) is used to drive the rotating shaft (12) to rotate; the heating element (11) is connected to the rotating shaft (12) so that the heating element (11) rotates circumferentially with the rotation of the rotating shaft (12); the rotating shaft (12) is disposed through the reaction chamber; the heating element (11) is disposed in the storage part (9) and close to the reaction part (2).

2. The reaction chamber according to claim 1, characterized in that, The heating element (11) is rotated to form a working position and a non-working position. When it is in the non-working position, the heating element (11) is not exposed in the hollow part of the hollow shielding ring (4). When in the working position, the heating element (11) is exposed in the hollow part of the hollow shielding ring (4).

3. The reaction chamber according to claim 1, characterized in that, The drive component (13) is located outside the reaction chamber.

4. The reaction chamber according to claim 1, characterized in that, The drive component (13) further includes a lifting drive unit (131), which is used to drive the rotating shaft (12) to move up and down within the storage unit (9).

5. The reaction chamber according to claim 1, characterized in that, The top end of the rotating shaft (12) extends radially to form a support arm (15), which is connected to the heating element (11).

6. The reaction chamber according to claim 1, characterized in that, The rotating shaft (12) is sealed to the reaction chamber.

7. The reaction chamber according to claim 6, characterized in that, A bellows (16) for sealing connection is fitted on the rotating shaft (12).

8. The reaction chamber according to claim 1, characterized in that, It also includes a base (3) disposed in the reaction chamber for supporting the substrate material to be deposited, the base (3) having a lifting function to allow the substrate material to be deposited to enter or exit the reaction section (2); and / or, it also includes a cover ring (6) disposed in a matching arrangement with the hollow shielding ring (4); And / or, a fixed heating element (5) is also provided on the inner wall of the storage section (9).

9. The reaction chamber according to claim 8, characterized in that, The edge of the base (3) is also provided with a deposition ring (7) that matches the covering ring (6).

10. A thin film deposition apparatus, characterized in that, Includes the reaction chamber as described in any one of claims 1 to 9.

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