Spray head and capacitive coupling plasma processing device

Abstract

The utility model relates to the technical field of semiconductor processing, and discloses a spray header and a capacitive coupling plasma processing device. A cooling layer is arranged on one side of the spraying head, cooling runners are uniformly arranged on the cooling layer, and the cooling runners are used for circulating a temperature control medium; a spraying layer is arranged on the other side of the spraying head, a gas cavity is formed in the spraying layer, a spraying plate is arranged on the side, away from the cooling layer, of the gas cavity, and a plurality of first air holes are formed in the spraying plate; one end of the air inlet hole is positioned on one side, far away from the spraying layer, of the cooling layer, and the other end of the air inlet hole is communicated with the gas cavity. According to the utility model, the cooling layer and the spraying layer are integrated in one spraying head, so that the installation and maintenance operations are simplified, the cost is reduced, and the reliability of equipment and the precision and consistency of semiconductor manufacturing are obviously improved; the problem that an external cooling system in a traditional structure is high in heat loss is solved.

Description

TECHNICAL FIELD

[0001] The utility model relates to the technical field of semiconductor processing especially relates to a shower head and capacitive coupling plasma processing device. BACKGROUND

[0002] In the field of semiconductor manufacturing, etching equipment plays a vital role. However, the existing etching equipment has obvious limitations in the control of temperature and gas uniformity. Most of the equipment can only control the uniformity of the gas or the uniformity of the temperature separately, and the temperature control structure and the shower are set separately, which results in low heat conduction efficiency between the temperature control structure and the shower head, and unsatisfactory integration and control effect.

[0003] Therefore, there is an urgent need for a shower head and capacitive coupling plasma processing device to solve the above problems. SUMMARY

[0004] Based on the above, the utility model discloses a kind of shower head and capacitive coupling plasma processing device, cooling layer and shower layer are integrated in one shower head, simplify installation and maintenance operation, reduce cost, significantly improve the reliability of equipment and the precision and consistency of semiconductor manufacturing.

[0005] To achieve the above purpose, the utility model adopts the following technical scheme:

[0006] On the one hand, a shower head is provided, one side of the shower head is provided with a cooling layer, the cooling layer is uniformly provided with a cooling flow channel, and the cooling flow channel is used for circulating temperature control medium;

[0007] The other side of the shower head is provided with a shower layer, the shower layer is provided with a gas cavity, one side of the gas cavity away from the cooling layer is provided with a shower plate, and a plurality of first gas holes are provided on the shower plate;

[0008] The shower head is provided with an air inlet hole, one end of the air inlet hole is located on the side of the cooling layer away from the shower layer, and the other end of the air inlet hole is communicated with the gas cavity.

[0009] As a preferred technical scheme of a shower head, the gas cavity includes a center cavity and an edge cavity, and the edge cavity is annularly arranged around the center cavity.

[0010] The air inlet hole is two, and the two air inlet holes are respectively communicated with the center cavity and the edge cavity.

[0011] As a preferred technical scheme of a shower head, the gas cavity is provided with a plurality of reinforcing rib groups from the center to the edge, and the reinforcing rib group includes reinforcing ribs arranged in a circumferential direction.

[0012] In another aspect, a capacitively coupled plasma processing device is provided, comprising the gas inlet assembly and any one of the showerheads described above.

[0013] The gas inlet assembly is provided with a spiral-shaped gas inlet channel, one end of which is connected to a gas supply device, and the other end is connected to the gas inlet hole.

[0014] As a preferred technical solution of the capacitively coupled plasma processing device, the device further comprises a housing, an upper cover and an electrode plate, the housing is provided with a mounting cavity, the showerhead and the electrode plate are mounted in the mounting cavity, the electrode plate is located on the side of the showerhead provided with a shower layer, and a plurality of second gas holes are uniformly arranged on the electrode plate.

[0015] The upper cover is connected to the housing, and the upper cover press-bonds the gas inlet assembly to the side of the cooling layer away from the shower layer, and the upper cover is provided with a through hole communicating with the gas inlet channel.

[0016] As a preferred technical solution of the capacitively coupled plasma processing device, the gas inlet assembly comprises an upper support, a spiral rod and a lower support, the lower support is provided with a communication groove, the spiral rod is mounted in the communication groove, the upper support is connected to the lower support to block the opening of the communication groove, and the spiral rod and the side wall of the communication groove form the gas inlet channel; the bottom of the communication groove is provided with a gas outlet, the upper support is provided with a gas inlet, and the gas inlet, the gas inlet channel and the gas outlet are sequentially communicated.

[0017] As a preferred technical solution of the capacitively coupled plasma processing device, the gas inlet is provided with a chamfer near one end of the gas inlet channel, and the gas outlet is provided with a chamfer near one end of the gas inlet channel.

[0018] As a preferred technical solution of the capacitively coupled plasma processing device, one end of the lower support near the upper support is provided with a first connecting groove, the groove wall of the first connecting groove comprises a threaded section and a smooth section, the smooth section is located between the threaded section and the bottom of the first connecting groove, the upper support is provided with an annular flange, the annular flange is provided with external threads, the annular flange is threadedly connected to the threaded section and moves into the smooth section, and a first sealing ring is arranged between the upper support and the bottom of the first connecting groove.

[0019] As a preferred technical solution of the capacitively coupled plasma processing device, one end of the upper support near the lower support is provided with a second connecting groove, the lower support is provided with a cylindrical portion, the first connecting groove is annularly arranged on the cylindrical portion, the cylindrical portion is embedded in the second connecting groove, and the end of the cylindrical portion abuts against the bottom of the second connecting groove.

[0020] As a preferred technical scheme of the capacitive coupled plasma processing device, the heating member is arranged on the side of the cooling layer away from the showering layer, and the heating member is used for heating the showering head.

[0021] The utility model discloses the beneficial effects are:

[0022] The utility model provides a showering head and capacitive coupled plasma processing device, one side of showering head is provided with cooling layer, and the other side is provided with showering layer, when this showering head is in use, the temperature control medium is circulated in the cooling flow channel, can adjust the temperature of showering head, gas supply equipment supplies gas to the gas cavity through the gas inlet hole, and the gas in the gas cavity is uniformly arranged on the inner side of the showering plate, improves the gas uniformity, and then the gas is uniformly discharged through the plurality of first gas holes of the showering plate. BRIEF DESCRIPTION OF DRAWINGS

[0023] In order to more clearly illustrate the technical scheme in the embodiment of the utility model, the drawings needed to be used in the embodiment of the utility model will be briefly introduced as follows, and obviously, the drawings in the following description are only some embodiments of the utility model, and for those skilled in the art, other drawings can be obtained according to the contents of the embodiment of the utility model and these drawings without paying the creative labor.

[0024] Figure 1 It is the sectional view of the showering head provided by the embodiment of the utility model,

[0025] Figure 2 It is Figure 1 It is the sectional view at A-A,

[0026] Figure 3 It is Figure 1 It is the sectional view at B-B,

[0027] Figure 4 It is the sectional view of the capacitive coupled plasma processing device provided by the embodiment of the utility model,

[0028] Figure 5 It is the sectional view of the gas inlet assembly provided by the embodiment of the utility model.

[0029] The marks in the drawing are as follows:

[0030] 1, spray head; 11, cooling layer; 111, cooling flow channel; 12, spray layer; 121, gas cavity; 1211, central cavity; 1212, edge cavity; 1213, reinforcing rib; 122, spray plate; 1221, first gas hole;

[0031] 2, air inlet assembly; 21, upper support; 211, annular flange; 212, second connecting groove; 213, air inlet; 22, screw rod; 23, lower support; 231, first connecting groove; 2311, threaded section; 2312, smooth section; 232, columnar part; 233, air outlet; 24, first sealing ring; 25, second sealing ring; 26, third sealing ring; 27, air inlet channel;

[0032] 3, shell; 4, upper cover; 5, electrode plate; 6, heating element. DETAILED DESCRIPTION

[0033] The utility model will be described in further detail below in combination with the drawings and embodiments. It can be understood that the specific embodiments described herein are only used to explain the utility model and are not limited to the utility model. In addition, it should be noted that only the parts related to the utility model are shown in the drawings for the convenience of description, not all the structures.

[0034] In the description of the utility model, unless otherwise explicitly specified and limited, the terms "connected", "connected", "fixed" should be understood broadly, for example, it can be fixedly connected, or it can be detachably connected, or it can be integrated; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium; it can be the internal communication of two elements or the interaction relationship of two elements. For ordinary skilled in the art, the specific meaning of the above terms in the utility model can be understood according to the specific circumstances.

[0035] In the utility model, unless otherwise explicitly specified and limited, the first feature "on" or "below" the second feature can include that the first and second features are in direct contact, or the first and second features are not in direct contact but are in contact through another feature between them. Moreover, the first feature "on", "above" and "above" the second feature includes that the first feature is directly above and obliquely above the second feature, or only indicates that the horizontal height of the first feature is higher than that of the second feature. The first feature "below", "below" and "below" the second feature includes that the first feature is directly below and obliquely below the second feature, or only indicates that the horizontal height of the first feature is less than that of the second feature.

[0036] In the description of the present embodiment, the terms "upper", "lower", "left", "right" and the like orientation or position relationship are based on the orientation or position relationship shown in the drawings, only for the convenience of description and simplification of operation, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present utility model. In addition, the terms "first" and "second" are only used to distinguish in the description and have no special meaning.

[0037] As shown in the Figures 1-3 embodiment, a shower head 1 is provided, one side of the shower head 1 is provided with a cooling layer 11, the cooling layer 11 is uniformly provided with a cooling flow channel 111, the cooling flow channel 111 is used for circulating temperature control medium; the other side of the shower head 1 is provided with a shower layer 12, the shower layer 12 is provided with a gas cavity 121, one side of the gas cavity 121 away from the cooling layer 11 is provided with a shower plate 122, a plurality of first gas holes 1221 are arranged on the shower plate 122; the shower head 1 is provided with an air inlet hole, one end of the air inlet hole is located on the side of the cooling layer 11 away from the shower layer 12, the other end of the air inlet hole is communicated with the gas cavity 121.

[0038] Wherein, one side of the shower head 1 is provided with a cooling layer 11, and the other side is provided with a shower layer 12, when the shower head 1 is in use, the temperature control medium circulates in the cooling flow channel 111, which can adjust the temperature of the shower head 1; the gas supply equipment supplies gas into the gas cavity 121 through the air inlet hole, the gas in the gas cavity 121 is uniformly arranged on the inner side of the shower plate 122, which improves the uniformity of the gas, and then the gas is uniformly discharged through the plurality of first gas holes 1221 of the shower plate 122. In the present embodiment, the cooling layer 11 and the shower layer 12 are integrated in one shower head 1, which simplifies the installation and maintenance operation, reduces the cost, and significantly improves the reliability of the equipment and the precision and consistency of semiconductor manufacturing; solve the problem of high heat loss of external cooling system in traditional structure, realize more efficient temperature regulation through two independent gas-liquid control, make the temperature of the shower head 1 area more stable, and the cooling layer 11 and the shower layer 12 do not interfere with each other, avoid cross influence.

[0039] Preferably, the gas cavity 121 includes a center cavity 1211 and an edge cavity 1212, and the edge cavity 1212 is annularly arranged around the center cavity 1211; the air inlet hole is two, and the two air inlet holes are respectively communicated with the center cavity 1211 and the edge cavity 1212. When the shower head 1 is in use, the gas supply equipment supplies gas into the center cavity 1211 and the edge cavity 1212 of the gas cavity 121 through the two air inlet holes respectively, and the edge cavity 1212 is independently supplemented with gas, which ensures that sufficient gas supply can be obtained in the edge area of the wafer, so as to maintain the uniformity of the plasma, especially when large-size wafer processing, the edge is usually more prone to the problem of insufficient processing due to less gas.

[0040] Preferably, the gas cavity 121 is provided with a plurality of reinforcing rib groups from the center to the edge, and each reinforcing rib group comprises reinforcing ribs 1213 arranged at intervals in the circumferential direction. The reinforcing ribs 1213 in this embodiment are arc-shaped. By arranging the reinforcing ribs 1213, the structural strength of the shower head 1 is improved, and the reinforcing ribs 1213 can also disturb the flow of the gas flowing into the gas cavity 121, further improving the uniformity of the gas.

[0041] Further preferably, the shower plate 122 is provided with a plurality of hole groups from the center to the edge, and each hole group comprises a plurality of first gas holes 1221 arranged at intervals in the circumferential direction. The plurality of hole groups gradually spread outward from the center, ensuring uniform distribution of the gas in the entire area of the shower head 1, effectively reducing turbulence in the gas flow, and ensuring that the gas stably and uniformly covers the entire processing area, especially in the edge area, reducing the edge effect; in the etching or deposition process in the plasma processing, the uniformity and repeatability of the processing can be significantly improved.

[0042] Preferably, the surface of the shower head 1 is treated by a hard anodic oxidation surface treatment process to enhance its durability and stability in a high-temperature, high-corrosion environment. Hard anodic oxidation has excellent wear resistance and corrosion resistance, and can adapt to harsh conditions such as high temperature and corrosive plasma environment.

[0043] Further, as shown in Figure 4 and Figure 5 The embodiment also provides a capacitively coupled plasma processing device, which comprises the gas inlet assembly 2 and the above-mentioned shower head 1; the gas inlet assembly 2 is provided with a spiral-shaped gas inlet channel 27, one end of the gas inlet channel 27 is used for communication with a gas supply device, and the other end is communicated with the gas inlet hole. In operation, the gas from the gas supply device generates vortex and rotation along the spiral-shaped gas inlet channel 27, accelerating the mixing process of the gas. The various gases are fully mixed in the spiral-shaped gas inlet channel 27, which helps to ensure that the gas composition reaching the electrode is consistent and avoids uneven gas concentration in the processing area.

[0044] In this embodiment, the capacitively coupled plasma processing device further comprises a housing 3, an upper cover 4 and an electrode plate 5, the housing 3 is provided with a mounting cavity, the shower head 1 and the electrode plate 5 are mounted in the mounting cavity, the electrode plate 5 is located on the side of the shower head 1 provided with the shower layer 12, and the electrode plate 5 is uniformly provided with a plurality of second gas holes; the upper cover 4 is connected to the housing 3, the upper cover 4 is crimped to the cooling layer 11 away from the side of the shower layer 12, and the upper cover 4 is provided with a through hole communicated with the gas inlet channel 27. The gas from the gas supply device flows to the electrode plate 5 through the through hole, the gas inlet channel 27, the gas inlet hole, the gas cavity 121 and the first gas hole 1221, and when the gas flows through the second gas holes of the electrode plate 5, the electrode plate 5 excites plasma by radio frequency or direct current power supply to provide an electric field to drive the ionization of the process gas.

[0045] In the embodiment, the cooling layer 11 is provided with a heating element 6 on the side away from the spray layer 12, and the heating element 6 is used to heat the shower head 1. The cooling channel 111 of the cooling layer 11 is filled with cooling medium, which is used to cool the shower head 1, and the heating element 6 is used to heat the shower head 1, so that the cooling layer 11 and the heating element 6 cooperate to realize temperature control of the shower head 1.

[0046] In the embodiment, the upper cover 4 and the air inlet assembly 2 are provided with a second sealing ring 25, so as to realize sealing between the upper cover 4 and the air inlet assembly 2. The air inlet assembly 2 and the shower head 1 are provided with a third sealing ring 26, so as to realize sealing between the air inlet assembly 2 and the shower head 1.

[0047] Further, the air inlet assembly 2 comprises an upper support 21, a screw rod 22 and a lower support 23. The lower support 23 is provided with a communication groove, the screw rod 22 is installed in the communication groove, and the upper support 21 is connected to the lower support 23 to block the opening of the communication groove. The screw rod 22 and the side wall of the communication groove form an air inlet channel 27. The bottom of the communication groove is provided with an air outlet 233, the upper support 21 is provided with an air inlet 213, and the air inlet 213, the air inlet channel 27 and the air outlet 233 are sequentially communicated. The gas enters the air inlet channel 27 through the air inlet 213, and then is discharged to the air inlet hole through the air outlet 233.

[0048] Preferably, the air inlet 213 and the air outlet 233 close to one end of the air inlet channel 27 are provided with chamfers, so as to facilitate gas diffusion.

[0049] Further preferably, the lower support 23 is provided with a first connecting groove 231 near one end of the upper support 21, the groove wall of the first connecting groove 231 comprises a threaded segment 2311 and a smooth segment 2312, the smooth segment 2312 is located between the threaded segment 2311 and the groove bottom of the first connecting groove 231, the upper support 21 is provided with an annular flange 211, the annular flange 211 is provided with external threads, the annular flange 211 is threadedly connected to the threaded segment 2311 and moves into the smooth segment 2312, and a first sealing ring 24 is arranged between the upper support 21 and the groove bottom of the first connecting groove 231. When the annular flange 211 is threadedly connected to the threaded segment 2311 and moves into the smooth segment 2312, the threaded segment 2311 can prevent the annular flange 211 from being separated from the first connecting groove 231, preventing the upper support 21 and the lower support 23 from being separated, and in addition, the annular flange 211 can slide in the smooth segment 2312, so that there is a certain amount of play between the upper support 21 and the lower support 23, preventing hard contact between the upper cover 4 and the air inlet assembly 2 during installation of the upper cover 4, which can cause damage. When the upper cover 4 presses down the upper support 21, the annular flange 211 slides in the smooth segment 2312, the first sealing ring 24 is pressed between the upper support 21 and the groove bottom of the first connecting groove 231, and sealing between the upper support 21 and the lower support 23 is achieved, preventing gas leakage.

[0050] In the embodiment, the gas delivered is special gas, and the first sealing ring 24, the second sealing ring 25 and the third sealing ring 26 are made of high-corrosion-resistant perfluorinated rubber, preventing the special gas from leaking during transmission.

[0051] Further preferably, the upper support 21 is provided with a second connecting groove 212 near one end of the lower support 23, the lower support 23 is provided with a cylindrical portion 232, the first connecting groove 231 is annularly arranged on the cylindrical portion 232, and the cylindrical portion 232 is embedded in the second connecting groove 212, achieving predetermined positioning between the upper support 21 and the lower support 23, improving assembly convenience, and the end of the cylindrical portion 232 abuts against the groove bottom of the second connecting groove 212, so that the screw rod 22 is fixed in the communicating groove.

[0052] It should be noted that the above is only a preferred embodiment of the present application and the technical principles applied. Those skilled in the art will understand that the present application is not limited to the specific embodiments described herein, and those skilled in the art can make various obvious changes, re-adjustments and substitutions without departing from the scope of the present application. Therefore, although the present application has been described in more detail through the above embodiments, the present application is not limited to the above embodiments, and can include more other equivalent embodiments without departing from the concept of the present application, and the scope of the present application is determined by the scope of the appended claims.

Claims

1. A spray head, characterized in that, A cooling layer (11) is provided on one side of the spray head, and the cooling layer (11) is uniformly provided with cooling channels (111), which are used to circulate temperature control medium. A spray layer (12) is provided on the other side of the spray head. The spray layer (12) is provided with a gas chamber (121). A spray plate (122) is provided on the side of the gas chamber (121) away from the cooling layer (11). A plurality of first air holes (1221) are provided on the spray plate (122). The spray head is provided with an air inlet. One end of the air inlet is located on the side of the cooling layer (11) away from the spray layer (12), and the other end of the air inlet is connected to the gas chamber (121).

2. The spray head according to claim 1, characterized in that, The gas cavity (121) includes a central cavity (1211) and an edge cavity (1212), wherein the edge cavity (1212) is arranged around the central cavity (1211); There are two air inlets, which are respectively connected to the central cavity (1211) and the edge cavity (1212).

3. The spray head according to claim 1, characterized in that, The gas cavity (121) is provided with a plurality of reinforcing ribs at intervals from the center to the edge, and the reinforcing ribs include reinforcing ribs (1213) arranged at intervals along the circumference.

4. A capacitively coupled plasma processing device, characterized in that, Includes an air intake assembly (2) and a spray head as described in any one of claims 1-3; The air intake assembly (2) is provided with a spiral-shaped air intake channel (27), one end of which is connected to the air supply device and the other end is connected to the air intake hole.

5. The capacitively coupled plasma processing apparatus according to claim 4, characterized in that, The capacitively coupled plasma processing device further includes a housing (3), a top cover (4), and an electrode plate (5). The housing (3) is provided with an installation cavity. The spray head and the electrode plate (5) are installed in the installation cavity. The electrode plate (5) is located on the side of the spray head where the spray layer (12) is provided. A plurality of second air holes are uniformly provided on the electrode plate (5). The upper cover (4) is connected to the housing (3). The upper cover (4) presses the air intake assembly (2) onto the side of the cooling layer (11) away from the spray layer (12). The upper cover (4) is provided with a through hole that communicates with the air intake channel (27).

6. The capacitively coupled plasma processing apparatus according to claim 4, characterized in that, The air intake assembly (2) includes an upper support (21), a spiral rod (22), and a lower support (23). The lower support (23) is provided with a connecting groove. The spiral rod (22) is installed in the connecting groove. The upper support (21) is connected to the lower support (23) to block the opening of the connecting groove. The spiral rod (22) and the side wall of the connecting groove form the air intake channel (27). The bottom of the connecting groove is provided with an air outlet (233). The upper support (21) is provided with an air inlet (213). The air inlet (213), the air intake channel (27), and the air outlet (233) are connected in sequence.

7. The capacitively coupled plasma processing apparatus according to claim 6, characterized in that, The air inlet (213) near the air intake channel (27) and the air outlet (233) near the air intake channel (27) are both provided with chamfers.

8. The capacitively coupled plasma processing apparatus according to claim 6, characterized in that, The lower support (23) is provided with a first connecting groove (231) at one end near the upper support (21). The groove wall of the first connecting groove (231) includes a threaded section (2311) and a smooth section (2312). The smooth section (2312) is located between the threaded section (2311) and the bottom of the first connecting groove (231). The upper support (21) is provided with an annular flange (211). The annular flange (211) is provided with an external thread. The annular flange (211) is threaded to the threaded section (2311) and moves into the smooth section (2312). A first sealing ring (24) is provided between the upper support (21) and the bottom of the first connecting groove (231).

9. The capacitively coupled plasma processing apparatus according to claim 8, characterized in that, The upper support (21) is provided with a second connecting groove (212) at one end near the lower support (23), and the lower support (23) is provided with a columnar part (232). The first connecting groove (231) is arranged around the columnar part (232), and the columnar part (232) is embedded in the second connecting groove (212), and the end of the columnar part (232) abuts against the bottom of the second connecting groove (212).

10. The capacitively coupled plasma processing apparatus according to claim 4, characterized in that, A heating element (6) is also provided on the side of the cooling layer (11) away from the spray layer (12), and the heating element (6) is used to heat the spray head.

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