Wafer heating device and semiconductor equipment

Abstract

The utility model relates to a wafer heating device and semiconductor equipment. The wafer heating device is used for bearing and heating a wafer. The wafer heating device comprises a heating disc and a heating cable. The upper surface of the heating disc is used for bearing a wafer, and the lower surface is provided with a spirally coiled cable trough; the heating cable is correspondingly embedded in the cable groove; wherein the heating cable is centrosymmetric about the geometric center of the heating disc; the distance between the heating cables close to the center of the heating disc in the radial direction of the heating disc is larger than the distance between the heating cables away from the center of the heating disc in the radial direction of the heating disc. According to the invention, the temperature uniformity of the wafer in the heating process can be improved, so that a process film with uniform thickness can be formed, and the electrical property of the wafer can be improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor, in particular to a wafer heating device and a semiconductor equipment. BACKGROUND

[0002] In the current technical field of semiconductor, with the advancement of large-scale integrated circuit technology, physical vapor deposition process cannot meet the requirement of step coverage of low line width, therefore, metal-organic chemical vapor deposition (MOCVD) process is becoming more and more important in the contact window process of logic circuit. In the metal-organic chemical vapor deposition process, process gas enters the process chamber through carrier gas and is deposited on the wafer surface to form a process film. In this process, the wafer is placed above the heating disc, and the wafer is heated by the heating disc, so that the process gas is decomposed by heat to form a process film on the wafer surface.

[0003] The surface of the heating disc in the related art is usually provided with a spiral ring-shaped heating groove (coil), and the heating groove is heated by converting electrical energy into heat energy through power supply, so that the carrier gas flowing in the heating groove can heat the wafer at the same time.

[0004] However, in actual process, there is usually a thickness difference between the middle region and the edge region of the wafer. Therefore, when the wafer is heated by the heating disc in the related art, the wafer surface temperature is not uniform, which causes the process gas to be heated unevenly on the wafer surface, affecting the thickness uniformity of the process film deposited after the process gas is decomposed by heat, thereby reducing the uniformity of the sheet resistance of the wafer and adversely affecting the electrical properties of the wafer. Utility model content

[0005] Based on this, the embodiments of the present application provide a wafer heating device and a semiconductor equipment to effectively improve the temperature uniformity of the wafer in the heating process, thereby facilitating the formation of a process film with uniform thickness, and further facilitating the improvement of the electrical properties of the wafer.

[0006] In order to achieve the above-mentioned purpose, on the one hand, some embodiments of the present application provide a wafer heating device for carrying and heating a wafer; the wafer heating device comprises a heating disc and a heating cable; the upper surface of the heating disc is used to carry the wafer, and the lower surface has a spiral coil cable groove; the heating cable is correspondingly embedded in the cable groove; wherein the heating cable is centrally symmetric with the geometric center of the heating disc; the spacing between each heating cable close to the center of the heating disc in the radial direction of the heating disc is greater than the spacing between each heating cable away from the center of the heating disc in the radial direction of the heating disc.

[0007] In some embodiments, the heating plate has at least four heating zones; wherein the at least four heating zones are centrally symmetrical about the geometric center of the heating plate; heating cables are spirally wound in each heating zone to form at least four cable windings; the cable windings are connected to each other by transition cables.

[0008] In some embodiments, the helical shape of each cable winding includes a triangle, trapezoid, sector, and / or sector ring.

[0009] In some embodiments, the corners of the heating cables within each cable winding have rounded transitions.

[0010] In some embodiments, the center of the heating plate has a non-heating area; wherein each heating area is located on the periphery of the non-heating area away from the center of the heating plate.

[0011] In some embodiments, the wafer heating device further includes a magnetic conductor; the magnetic conductor is located on the side of the heating cable opposite to the heating plate. The magnetic conductor is made of a magnetic dielectric material; the magnetic flux loop of the heating cable passes through the magnetic conductor.

[0012] In some embodiments, the wafer heating device further includes a plurality of thermocouples; the plurality of thermocouples are located on the upper surface and the lower surface of the heating plate and are used to detect the temperature of the heating plate; wherein, each thermocouple on the upper surface of the heating plate is centrally symmetrical about the geometric center of the heating plate, and each thermocouple on the lower surface of the heating plate is centrally symmetrical about the geometric center of the heating plate.

[0013] In some embodiments, multiple thermocouples are distributed in the inner region near the center of the heating plate and the edge region away from the center of the heating plate, respectively, to detect the temperature of the inner region and the temperature of the edge region.

[0014] In some embodiments, the wafer heating device further includes a heat preservation structure; the heat preservation structure is located on the side of the heating plate away from the wafer and is used to maintain the temperature stability of the heating plate; wherein the heat preservation structure is a stacked structure from the inside to the outside; the heat preservation structure includes a first heat preservation layer, a second heat preservation layer and a third heat preservation layer; the second heat preservation layer is wrapped around the outside of the first heat preservation layer; the third heat preservation layer is wrapped around the outside of the second heat preservation layer.

[0015] On the other hand, according to some embodiments, this application also provides a semiconductor device; the semiconductor device includes a process chamber and a wafer heating device as described in any of the preceding aspects of this application; the wafer heating device is located inside the process chamber.

[0016] The embodiments of this application may have, or at least have, the following advantages:

[0017] In this embodiment, a centrally symmetrical and spirally wound heating cable is formed in a cable groove on one side of the heating plate. The wafer is heated based on the principle of electromagnetic induction using the heating cable. The spacing between the heating cables near the center of the heating plate is greater than the spacing between the heating cables away from the center. This results in a denser arrangement of heating cables in the edge region where the wafer thickness is relatively large and the area is large, and a looser arrangement of heating cables in the center region where the wafer thickness is relatively small and the area is small, thereby relatively increasing the heating efficiency of the edge region of the wafer. This helps the heating plate form a uniform temperature field during the heating process, improving the temperature uniformity of the wafer during heating, thus ensuring the uniform heating of the process gas on the wafer surface. This facilitates the formation of a uniformly thick process thin film, improving the uniformity of the sheet resistance of the wafer, and thus improving the electrical properties of the wafer.

[0018] Details of one or more embodiments of this application are set forth in the following drawings and description. Other features, objects, and advantages of this application will become apparent from the specification, drawings, and claims. Attached Figure Description

[0019] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0020] Figure 1 This is a schematic diagram of the structure of a wafer heating device provided in some embodiments;

[0021] Figure 2 One of the embodiments provided Figure 1 A rotated cross-sectional view of the wafer heating device at position AA';

[0022] Figure 3 This is a schematic diagram of the structure of a heating plate provided in some embodiments;

[0023] Figure 4 This is a schematic diagram illustrating the positional relationship between a heating plate, a heating cable, and a magnetic conductor in some embodiments.

[0024] Figure 5 This is a schematic diagram of the structure of a magnetic conductor provided in some embodiments;

[0025] Figure 6 This is a schematic diagram of another wafer heating device provided in some embodiments;

[0026] Figure 7This is a schematic diagram of a thermal insulation structure provided in some embodiments;

[0027] Figure 8 This is a schematic diagram of the structure of a semiconductor device provided in some embodiments.

[0028] Explanation of reference numerals in the attached figures:

[0029] 1-Heating plate, 2-Heating cable, G-Cable trough, G1-Heating cable trough, G2-Transition cable trough, R1-Heating area, 4-Transition cable, R2-Non-heating area, 5-Groove, 6-Magnetic conductor, 7-Thermocouple, 8-Insulation structure;

[0030] 9-Process chamber, H-Wafer heating device, W-Target wafer, 10-Process gas inlet pipe, 11-Gas distributor, 12-RF signal generator, 13-Vacuum pump exhaust port. Detailed Implementation

[0031] To facilitate understanding of this application, a more complete description will be provided below with reference to the accompanying drawings, which illustrate preferred embodiments of the application. However, this application may be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of this application will be thorough and complete.

[0032] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.

[0033] It should be understood that when an element or layer is referred to as being "on," "adjacent to," or "connected to" other elements or layers, it may be directly on, adjacent to, connected to, or coupled to other elements or layers, or there may be intervening elements or layers. It should be understood that although the terms first, second, third, etc., may be used to describe various elements, components, regions, layers, doping types, and / or portions, these elements, components, regions, layers, doping types, and / or portions should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer, doping type, or portion from another element, component, region, layer, doping type, or portion. Therefore, without departing from the teachings of this application, the first element, component, region, layer, doping type, or portion discussed below may be referred to as a second element, component, region, layer, or portion.

[0034] When used herein, the singular forms of “a,” “an,” and “the” may also include the plural forms unless the context clearly indicates otherwise. It should also be understood that when the terms “comprise” and / or “comprising” are used in this specification, the presence of the stated feature, integer, step, operation, element, and / or part is established, but the presence or addition of one or more other features, integers, steps, operations, elements, parts, and / or groups is not excluded. Meanwhile, when used herein, the term “and / or” includes any and all combinations of the associated listed items.

[0035] Embodiments of the utility model are described herein with reference to cross-sectional views illustrating preferred embodiments (and intermediate structures) of this application, thus allowing for the expectation of variations in the shown shapes due to, for example, manufacturing techniques and / or tolerances. Embodiments of this application should not be limited to the specific shapes of the regions shown herein, but rather include shape deviations due to, for example, manufacturing techniques. Therefore, the regions shown in the figures are substantially schematic, and their shapes do not represent the actual shapes of regions of the device, nor do they limit the scope of this application.

[0036] This application provides a wafer heating device and semiconductor equipment to effectively improve the temperature uniformity of the wafer during the heating process.

[0037] In some embodiments, the wafer heating device is used to hold and heat the wafer; see also Figure 1 and Figure 2 The wafer heating device includes a heating plate 1 and heating cables 2; the upper surface of the heating plate 1 is used to support the wafer; please refer to... Figure 3 The lower surface has a spirally coiled cable groove G; heating cables 2 are correspondingly embedded in the cable groove G; wherein, the heating cables 2 are centrally symmetrical about the geometric center of the heating plate 1; the radial spacing between each heating cable 2 near the center of the heating plate 1 is greater than the radial spacing between each heating cable 2 far from the center of the heating plate 1.

[0038] In some examples, the shape of the heating plate 1 includes a centrally symmetric figure, such as a circle, an ellipse, or a regular polygon.

[0039] For example, please refer to Figure 1 The heating plate 1 can be circular, for example.

[0040] For example, the radius of the heating plate 1 can range from 100mm to 200mm; the radius of the heating plate 1 can be, for example, 100mm, 120mm, 140mm, 150mm, 160mm, 165mm, 170mm, 180mm or 200mm, etc.

[0041] For example, the thickness of the heating plate 1 can range from 40mm to 100mm; the thickness of the heating plate 1 can be, for example, 40mm, 50mm, 58mm, 60mm, 70mm, 80mm, 90mm or 100mm.

[0042] For example, the material of heating plate 1 includes, but is not limited to, steel; the material of heating plate 1 may be, for example, carbon structural steel.

[0043] In some examples, the shape of the heating cable 2 matches the shape of the cable trough G.

[0044] For example, heating cable 2 includes, but is not limited to, silicone-insulated cable.

[0045] For example, the cross-sectional area of ​​the core of heating cable 2 can range from 10 mm². 2 ~20mm 2 The cross-sectional area of ​​the core of heating cable 2 can be, for example, 10 mm². 2 12mm 2 14mm 2 15mm 2 16mm 2 18mm 2 Or 20mm 2 wait.

[0046] For example, the cross-sectional diameter of the heating cable 2 can range from 5mm to 10mm; the cross-sectional diameter of the heating cable 2 can be, for example, 5mm, 6mm, 7mm, 7.5mm, 8mm, 9mm or 10mm, etc.

[0047] In some examples, please refer to [link / reference]. Figure 1 In the radial direction of the heating plate 1, the spacing between each heating cable 2 gradually decreases in the direction away from the center of the heating plate 1.

[0048] For example, the spacing between each heating cable 2 can decrease arithmetically, gradually, or in groups along a direction away from the center of the heating plate 1.

[0049] In this embodiment, a centrally symmetrical and spirally wound heating cable 2 is formed in the cable groove G on one side of the heating plate 1. The wafer is heated based on the principle of electromagnetic induction using the heating cable 2. The spacing between the heating cables 2 near the center of the heating plate 1 is greater than the spacing between the heating cables 2 far from the center of the heating plate 1. This results in a denser arrangement of the heating cables 2 in the edge region where the wafer thickness is relatively large and the area is large, and a looser arrangement of the heating cables 2 in the center region where the wafer thickness is relatively small and the area is small, thereby relatively increasing the heating efficiency of the edge region of the wafer. This helps the heating plate 1 to form a uniform temperature field during the heating process, thereby improving the temperature uniformity of the wafer during the heating process. This ensures the uniformity of the process gas heating on the wafer surface, which is conducive to the formation of a uniform thickness process film, thereby improving the uniformity of the sheet resistance of the wafer and thus improving the electrical properties of the wafer.

[0050] It should be added that electromagnetic induction heating (EH) technology has advantages such as rapid heat start-up, high thermal efficiency, high accuracy in temperature control, and superior insulation performance. The electromagnetic induction heating plate 1 has advantages such as uniform temperature distribution, fast heating rate, and low energy consumption, which can effectively improve production efficiency and reduce processing costs.

[0051] In some embodiments, please continue reading Figure 1 The heating plate 1 has at least four heating areas R1; wherein the at least four heating areas R1 are centrally symmetrical about the geometric center of the heating plate 1; the heating cable 2 is spirally wound in each heating area R1 to form at least four cable windings; the cable windings are connected to each other by a transition cable 4.

[0052] For example, the number of heating zones R1 can be 4, 6, 8, 10 or 12, etc.

[0053] For example, the shape of the heating area R1 includes a fan shape; the shape of the heating area R1 can be, for example, a right-angled fan shape or an acute-angled fan shape.

[0054] For example, the area of ​​each heating region R1 is equal.

[0055] In some embodiments, please refer to Figure 3 The cable trough G includes a heating cable trough G1 and a transition cable trough G2; the transition cable trough G2 is located on the side of the heating cable trough G1 away from the upper surface of the heating plate 1.

[0056] For example, the depth of the heating cable trough G1 can range from 5mm to 20mm; the depth of the heating cable trough G1 can be, for example, 5mm, 8mm, 10mm, 12mm, 15mm, 18mm or 20mm, etc.

[0057] For example, the width of the heating cable trough G1 can range from 3mm to 10mm; the width of the heating cable trough G1 can be, for example, 3mm, 4mm, 5mm, 6mm, 7mm, 8mm, 9mm or 10mm.

[0058] For example, the transition cable trough G2 can be connected to the heating cable trough G1; the depth of the transition cable trough G2 can be twice the depth of the heating cable trough G1.

[0059] For example, the depth of the transition cable trough G2 can range from 10mm to 40mm; the depth of the transition cable trough G2 can be, for example, 10mm, 16mm, 20mm, 24mm, 30mm, 36mm or 40mm.

[0060] For example, the width of the transition cable trough G2 can range from 3mm to 10mm; the width of the heating cable trough G1 can be, for example, 3mm, 4mm, 5mm, 6mm, 7mm, 8mm, 9mm or 10mm.

[0061] It should be noted that the depth of the cable trough G refers to the dimension of the cable trough G in the direction perpendicular to the surface of the heating plate 1; the width of the cable trough G refers to the dimension of the cable trough G in the direction parallel to the surface of the heating plate 1.

[0062] It should be noted that each transition cable 4 is embedded in the transition cable groove G.

[0063] For example, transition cable 4 includes, but is not limited to, silicone-insulated cable.

[0064] It should be noted that the transition cable 4 and the heating cable 2 can be a single integrated structure.

[0065] For example, the cross-sectional area of ​​the conductor of transition cable 4 can range from 10 mm². 2 ~20mm 2 The cross-sectional area of ​​the conductor in transition cable 4 can be, for example, 10 mm². 2 12mm 2 14mm 2 15mm 2 16mm 2 18mm 2 Or 20mm 2 wait.

[0066] For example, the cross-sectional diameter of the transition cable 4 can range from 5mm to 10mm; the cross-sectional diameter of the transition cable 4 can be, for example, 5mm, 6mm, 7mm, 7.5mm, 8mm, 9mm or 10mm, etc.

[0067] In some embodiments, please refer to Figure 1 The spiral shape of each cable winding includes triangular, trapezoidal, sector and / or sector ring.

[0068] For example, the spiral shape of each cable winding can be, for instance, triangular.

[0069] In this embodiment, since the triangular heating cable 2 exhibits small radial and circumferential temperature differences in each heating region R1 when reaching a stable temperature, setting the spiral shape of each cable winding to a triangle or a trapezoidal, fan-shaped, or fan-ring shape that closely resembles a triangle can effectively improve the temperature uniformity of the heating plate 1 surface. This ensures the uniform heating of the process gas on the wafer surface, which is beneficial for forming a uniformly thick process thin film. Furthermore, since the shape of each heating region R1 includes a fan shape, the area coverage of each heating region R1 by the heating cable 2 can also be improved, thereby increasing the wafer heating efficiency.

[0070] In some embodiments, please continue reading Figure 1 The corners of the heating cables 2 within each cable winding are rounded.

[0071] In some embodiments, please continue reading Figure 1 The connection point between heating cable 2 and transition cable 4 has a rounded corner transition.

[0072] In this embodiment, rounded corners are used at corner and connection points to effectively prevent cable damage and improve the working stability of the wafer heating device.

[0073] In some embodiments, please refer to Figure 2 and Figure 3 The heating plate 1 has a non-heating area R2 at its center; wherein each heating area R1 is located on the periphery of the non-heating area R2 away from the center of the heating plate 1.

[0074] For example, the shape of the non-heated zone R2 includes a centrally symmetric figure, such as a circle, an ellipse, or a regular polygon.

[0075] For example, please refer to Figure 2 The shape of the non-heated area R2 can be similar to that of the heating plate 1, for example, it can be circular.

[0076] In some embodiments, please refer to Figure 2 and Figure 3 The edge of the heating plate 1 has a groove 5 arranged symmetrically with respect to the center of the heating plate 1; used to snap the heating plate 1 onto the wafer frame.

[0077] For example, the groove 5 includes, but is not limited to, the U-shaped groove 5.

[0078] In some embodiments, the wafer heating device further includes a magnetic conductor 6; see also Figure 4 The magnetic conductor 6 is located on the side of the heating cable 2 away from the heating plate 1. The material of the magnetic conductor 6 includes a magnetic medium material; the magnetic flux ring of the heating cable 2 passes through the magnetic conductor 6.

[0079] For example, the surface of the magnetic conductor 6 facing away from the heating cable 2 can be flush with the lower surface of the heating plate 1.

[0080] For example, please refer to Figure 5 The shape of the magnetic conductor 6 includes, but is not limited to, a cuboid.

[0081] For example, the thickness of the magnetic conductor 6 can range from 0.5mm to 3mm; the thickness of the magnetic conductor 6 can be, for example, 0.5mm, 1mm, 1.5mm, 2mm, 2.5mm or 3mm.

[0082] It should be noted that the thickness of the magnetic conductor 6 refers to the radial dimension of the magnetic conductor 6 in the cross-section of the heating cable 2.

[0083] For example, the width of the magnetic conductor 6 can range from 3mm to 10mm; the width of the magnetic conductor 6 can be, for example, 3mm, 4mm, 5mm, 6mm, 7mm, 8mm, 9mm or 10mm.

[0084] For example, the width of the magnetic conductor 6 is matched with the width of the cable trough G.

[0085] It should be noted that the width of the magnetic conductor 6 refers to the dimension of the magnetic conductor 6 in the cross-sectional direction of the heating cable 2.

[0086] For example, the material of the magnetic conductor 6 includes, but is not limited to, magnetic medium materials; the material of the magnetic conductor 6 can be, for example, silicon alloy steel or ferrite magnetic materials (e.g., magnetite).

[0087] For example, please refer to Figure 6 The magnetic conductor 6 can be positioned at a point where the heating cable 2 is in a straight line.

[0088] In this embodiment, by setting a magnetic conductor 6 and placing it in the magnetic flux loop of the heating cable 2, the magnetic flux loop of the heating cable 2 passes through the magnetic conductor 6, thereby reducing the total magnetic resistance of the heating cable 2 and increasing the magnetic flux, so that more energy is concentrated at the corresponding position of the heating cable 2, reducing the current required for the heating cable 2 to heat up, thereby saving energy and improving the wafer heating efficiency.

[0089] In some embodiments, the wafer heating device further includes a plurality of thermocouples 7; the plurality of thermocouples 7 are located on the upper surface and the lower surface of the heating plate 1 and are used to detect the temperature of the heating plate 1; wherein, each thermocouple 7 on the upper surface of the heating plate is centrally symmetrical about the geometric center of the heating plate 1, and each thermocouple 7 on the lower surface of the heating plate is centrally symmetrical about the geometric center of the heating plate 1.

[0090] For example, thermocouple 7 includes, but is not limited to, type K thermocouple.

[0091] For example, the number of thermocouples 7 provided on the upper surface of the heating plate 1 can be, for example, 4, 6, 8, 10, 12 or 16.

[0092] For example, the number of thermocouples 7 provided on the lower surface of the heating plate 1 can be, for example, 4, 6, 8, 10, 12 or 16.

[0093] For example, the two ends of the thermocouple 7 can be respectively embedded in at least two circular grooves provided on the lower surface of the heating plate.

[0094] For example, the diameter of the circular groove can range from 3mm to 10mm; the diameter of the circular groove can be, for example, 3mm, 5mm, 8mm or 10mm, etc.

[0095] In some embodiments, a plurality of thermocouples 7 are respectively distributed in the inner region near the center of the heating plate 1 and the edge region away from the center of the heating plate 1, and are used to detect the temperature of the inner region and the temperature of the edge region, respectively.

[0096] In some examples, multiple thermocouples 7 may be located in each heating region R1.

[0097] For example, taking the number of thermocouples 7 on the upper surface of the heating plate as 8, each heating area R1 on the upper surface of the heating plate is provided with two thermocouples 7, and the two thermocouples 7 in each heating area R1 can be located in the inner area close to the center of the heating plate 1 and the edge area far away from the center of the heating plate 1, respectively.

[0098] For example, taking four thermocouples 7 on the lower surface of the heating plate as an example; each heating area R1 on the lower surface of the heating plate is provided with a thermocouple 7, and each thermocouple 7 can be located at the geometric center of each heating area R1.

[0099] In this embodiment, multiple thermocouples 7 are provided on both the upper and lower surfaces of the heating plate 1 to measure the temperature. This allows for real-time monitoring of temperature changes at various points on the upper and lower surfaces of the heating plate 1 during the wafer heating process. This facilitates monitoring the temperature distribution on the surface of the heating plate 1, enabling precise temperature control of the heating plate 1. This ensures a uniform temperature field is formed during the heating process, improving the temperature uniformity of the wafer and guaranteeing uniform heating of the process gas on the wafer surface. This promotes the formation of a uniformly thick process film, increasing the uniformity of the wafer's sheet resistance and ultimately improving the wafer's electrical properties.

[0100] In some embodiments, please refer to Figure 7 The wafer heating device also includes a heat preservation structure 8; the heat preservation structure 8 is located on the side of the heating plate 1 away from the wafer, and is used to maintain the temperature stability of the heating plate 1; wherein, the heat preservation structure 8 is a stacked structure from the inside to the outside; the heat preservation structure 8 includes a first heat preservation layer, a second heat preservation layer and a third heat preservation layer; the second heat preservation layer is wrapped around the outside of the first heat preservation layer; the third heat preservation layer is wrapped around the outside of the second heat preservation layer.

[0101] For example, the material of the first insulation layer includes, but is not limited to, glass fiber fabric.

[0102] For example, the material of the second insulation layer includes, but is not limited to, aluminum silicate fiber felt.

[0103] For example, the material of the third insulation layer includes, but is not limited to, silicone cloth.

[0104] For example, the first, second, and third insulation layers can be sewn together with fiberglass thread to form a layered wrapping structure from the inside out.

[0105] In some examples, please refer to [link / reference]. Figure 7 The outer contour shape of the heat insulation structure 8 is similar to or the same as the outer contour shape of the heating plate 1.

[0106] For example, the outer contour shape of the insulation structure 8 includes, but is not limited to, a centrally symmetrical figure, such as a circle, an ellipse, or a regular polygon.

[0107] In this embodiment, the temperature of the heating plate 1 is kept stable by the heat preservation structure 8, which helps to reduce heat loss and improve heating efficiency. It also helps to maintain the stability and uniformity of the wafer surface temperature, improves the temperature controllability, and forms a process film with uniform thickness, thereby improving the electrical properties of the wafer.

[0108] This application also provides a semiconductor device according to some embodiments, which includes the wafer heating device H in the above embodiments. The semiconductor device also possesses all the technical advantages of the aforementioned wafer heating device H. It should be noted that the parts that are the same as or corresponding to those in the above embodiments can be referred to the corresponding descriptions in the above embodiments, and will not be described in detail below.

[0109] In some embodiments, please refer to Figure 8 The semiconductor equipment also includes a process chamber 9; the wafer heating device H is located inside the process chamber 9.

[0110] For example, process chamber 9 includes, but is not limited to, a TxZ (TiN and Zero consumable) chamber.

[0111] In some examples, please refer to [link / reference]. Figure 8 The wafer heating device H is used to hold the target wafer W and heat it.

[0112] For example, semiconductor equipment includes, but is not limited to, chemical vapor deposition equipment; for instance, it may be a metal-organic chemical vapor deposition (MOCVD) equipment.

[0113] For example, the wafer heating device H provided in the embodiments of this application can be applied to the preparation process of the glue layer in the contact window process.

[0114] It should be noted that the glue layer preparation in the contact window process requires the deposition of a titanium nitride (TiN) film using Metal-Organic Chemical Vapor Deposition (MOCVD). Tetramethylammonium titanium (TDMAT) is used as the metal-organic compound raw material, which decomposes under specific temperature and pressure to generate amorphous titanium nitride. In the semiconductor technology field, uniformity is beneficial to improving wafer yield. Therefore, to improve the uniformity of the titanium nitride (TiN) film, uniform temperature distribution during deposition is crucial. Using the wafer heating device H provided in this application in semiconductor equipment helps to form a uniform temperature field, improving the temperature uniformity of the wafer during heating. This ensures the uniform heating of the process gas on the wafer surface, facilitating the formation of a uniformly thick process film. This improves the uniformity of the wafer's sheet resistance, thereby enhancing the wafer's electrical properties.

[0115] In some embodiments, please continue reading Figure 8The semiconductor equipment also includes a process gas inlet pipe 10 and a gas distributor 11; the gas distributor 11 is connected to the process gas inlet pipe 10 and is used to uniformly distribute the process gas within the process chamber 9; wherein, the flow direction of the process gas can be as follows: Figure 8 As shown by the arrow in the image.

[0116] It should be noted that process gas can be introduced into process chamber 9 via carrier gas.

[0117] For example, the carrier gas includes an inert gas; such as helium (He), neon (Ne), argon (Ar), krypton (Kr), or xenon (Xe).

[0118] For example, process gases include, but are not limited to, tetramethylammonium titanium (TDMAT) gas.

[0119] In some embodiments, please continue reading Figure 8 The semiconductor device also includes a radio frequency signal generator 12; the radio frequency signal generator 12 is connected to the process chamber 9 and is used to emit radio frequency signals.

[0120] In some embodiments, please continue reading Figure 8 The semiconductor device also includes a vacuum pump exhaust port 13; the vacuum pump exhaust port 13 is connected to the process chamber 9 and is used to exhaust the gas in the process chamber 9.

[0121] In the description of this specification, references to terms such as "some embodiments," "some examples," "exemplarily," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the illustrative descriptions of the above terms do not necessarily refer to the same embodiments or examples.

[0122] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0123] The embodiments described above are merely examples of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the utility model patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application.

Claims

1. A wafer heating device, characterized in that, Used to hold and heat the wafer; The wafer heating device includes: Heating plate; the upper surface of the heating plate is used to support the wafer, and the lower surface has a spirally wound cable groove; Heating cables are correspondingly embedded in the cable groove; The heating cables are centrally symmetrical about the geometric center of the heating plate; the radial spacing between the heating cables closer to the center of the heating plate is greater than the radial spacing between the heating cables farther from the center of the heating plate.

2. The wafer heating apparatus according to claim 1, characterized in that, The heating plate has at least four heating zones; wherein the at least four heating zones are centrally symmetrical about the geometric center of the heating plate; the heating cable is spirally wound in each of the heating zones to form at least four cable windings; the cable windings are connected to each other by a transition cable.

3. The wafer heating apparatus according to claim 2, characterized in that, The spiral shape of each of the cable windings includes triangular, trapezoidal, sector-shaped and / or sector-ring-shaped.

4. The wafer heating apparatus according to claim 2, characterized in that, The corners of the heating cables within each of the cable windings are rounded.

5. The wafer heating apparatus according to claim 2, characterized in that, The heating plate has a non-heating area at its center; wherein each heating area is located on the periphery of the non-heating area away from the center of the heating plate.

6. The wafer heating apparatus according to claim 1, characterized in that, Also includes: A magnetic conductor is located on the side of the heating cable opposite to the heating plate; The magnetic conductor is made of a magnetic medium material; the magnetic flux ring of the heating cable passes through the magnetic conductor.

7. The wafer heating apparatus according to claim 1, characterized in that, Also includes: Multiple thermocouples are located on the upper and lower surfaces of the heating plate for detecting the temperature of the heating plate; The thermocouples on the upper surface of the heating plate are centrally symmetrical about the geometric center of the heating plate, and the thermocouples on the lower surface of the heating plate are centrally symmetrical about the geometric center of the heating plate.

8. The wafer heating apparatus according to claim 7, characterized in that, Multiple thermocouples are respectively distributed in the inner region near the center of the heating plate and the edge region away from the center of the heating plate, and are used to detect the temperature of the inner region and the temperature of the edge region, respectively.

9. The wafer heating apparatus according to claim 1, characterized in that, Also includes: A heat-insulating structure is located on the side of the heating plate away from the wafer, used to maintain the temperature stability of the heating plate; The insulation structure is a layered structure from the inside out; the insulation structure includes: First insulation layer; The second insulation layer is wrapped around the outside of the first insulation layer; The third insulation layer is wrapped around the outside of the second insulation layer.

10. A semiconductor device, characterized in that, It includes a process chamber and a wafer heating device as described in any one of claims 1 to 9; the wafer heating device is located inside the process chamber.

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