Wafer cleaning device

Abstract

The utility model provides a wafer cleaning device, which belongs to the field of semiconductor equipment, and can effectively heat a liquid supply piece through the arrangement of a heating piece, thereby effectively preventing the formation of ammonium fluoride crystals. Due to the arrangement of the temperature detection piece and the controller, the temperature can be automatically and conveniently controlled; through the arrangement of the cooling part, rapid cooling of the liquid supply part / the liquid supply part shell can be achieved, and aging is improved; due to the arrangement of the passivation layer, reaction between ammonium fluoride crystals and metal materials can be avoided, and the probability of generation of metal impurities is reduced; by arranging the liquid supply piece shell, the liquid supply piece can be effectively protected, and reaction between the liquid supply piece and ammonium fluoride crystals is avoided; and the heat insulation piece is arranged, so that the influence of heat on the cleaning liquid in the liquid supply piece can be avoided, and ammonium fluoride crystals are effectively prevented from being generated in time. The wafer cleaning device provided by the utility model can improve the time efficiency, and can improve the productivity and quality of products.

Description

TECHNICAL FIELD

[0001] The utility model belongs to the field of semiconductor equipment relates to a wafer cleaning device. BACKGROUND

[0002] Wafer cleaning is one of the most important steps in semiconductor manufacturing process, its purpose is to remove the various contaminants on the wafer surface, ensure that the subsequent process steps can be carried out on the clean wafer surface, improve the yield and reduce the risk of damage.

[0003] In order to effectively clean the wafer, the industry generally uses the following cleaning steps:

[0004] First step: using acetone and methanol solvent cleaning.

[0005] Second step: RCA cleaning, that is, using a mixed solution of ammonia, hydrogen peroxide and deionized water to clean the wafer, mainly to remove organic contaminants, particles and metal ions on the wafer surface.

[0006] Third step: HF cleaning, that is, using dilute hydrofluoric acid solution to clean the wafer, mainly used to remove the oxide layer and some silicon surface contaminants.

[0007] Fourth step: using high-purity deionized water for rinsing, and then drying through spin drying or other drying techniques to avoid water stains and spots.

[0008] Among them, in the wet cleaning process, ammonium fluoride will be formed due to the volatilization reaction of ammonia and hydrogen fluoride, and ammonium fluoride is easy to form ammonium fluoride crystals on the surface of the production equipment, and the ammonium fluoride crystals are corrosive to metals, and the long-term accumulation of ammonium fluoride crystals may fall off and contaminate the wafer. The industry usually uses deionized water cleaning method to remove ammonium fluoride crystals to avoid contamination of ammonium fluoride crystals to equipment and products.

[0009] However, the existing cleaning method for removing ammonium fluoride crystals needs to clean the equipment frequently, which will affect the wafer cleaning efficiency, and in the process of manual equipment cleaning, not only the pollution risk will be generated, but also the risk of exposure of operating personnel in the production environment will be increased, and the artificial cleaning will also bring metal ions and other equipment pollution.

[0010] Therefore, it is necessary to provide a wafer cleaning device. UTILITY MODEL CONTENT

[0011] In view of the above-mentioned shortcomings of the prior art, the purpose of the utility model is to provide a wafer cleaning device for solving the problem of ammonium fluoride crystals in the prior art wafer cleaning.

[0012] To achieve the above and other related objectives, this utility model provides a wafer cleaning apparatus, the wafer cleaning apparatus comprising:

[0013] cavity;

[0014] A support platform, disposed within the cavity, is used to support the wafer to be cleaned;

[0015] A liquid supply unit is disposed in the cavity and located above the support stage, for supplying cleaning fluid to the wafer to be cleaned;

[0016] A heating element is disposed on the outside of the liquid supply element to provide a heat source to the liquid supply element;

[0017] A temperature sensor is disposed within the cavity to detect the temperature of the liquid supply component;

[0018] The controller communicates with the heating element and the temperature sensing element.

[0019] Optionally, the outer wall of the heating element is further covered with a passivation layer, which includes a single layer or a stack of layers composed of PC material layer, PP material layer, PEEK material layer and PFA material layer.

[0020] The present invention also provides a wafer cleaning apparatus, the wafer cleaning apparatus comprising:

[0021] cavity;

[0022] A support platform, disposed within the cavity, is used to support the wafer to be cleaned;

[0023] A liquid supply unit is disposed in the cavity and located above the support stage, for supplying cleaning fluid to the wafer to be cleaned;

[0024] A liquid supply component housing is disposed within the cavity and located around the liquid supply component, and there is an accommodating space between the outer wall of the liquid supply component and the inner wall of the liquid supply component housing;

[0025] A heat insulation component, wherein the heat insulation component is disposed within the accommodating space and covers the liquid supply component;

[0026] A heating element is disposed within the accommodating space and located between the heat insulation element and the liquid supply element housing, for providing a heat source to the liquid supply element housing;

[0027] A temperature sensor is disposed within the cavity to detect the temperature of the liquid supply component housing;

[0028] The controller communicates with the heating element and the temperature sensing element.

[0029] Optionally, the liquid supply housing includes a metal housing, which may include a stainless steel housing.

[0030] Optionally, the outer periphery of the metal casing is further covered with a passivation layer, which includes a single layer or a stack of layers composed of PC material layer, PP material layer, PEEK material layer and PFA material layer.

[0031] Optionally, it further includes a cooling element disposed within the cavity to provide a cold source and to communicate with the controller; the cooling element includes one or a combination of an air-cooled cooling element and a liquid-cooled cooling element, wherein the air-cooled cooling element includes a nitrogen cooling element or an inert gas cooling element.

[0032] Optionally, the heating element includes one or a combination of a heating coil, a heating wire, and a heating film.

[0033] Optionally, the liquid supply component includes a liquid supply pipe and a liquid supply nozzle communicating with the liquid supply pipe, and the heating component covers the liquid supply pipe and the liquid supply nozzle.

[0034] Optionally, the device includes N > 1 temperature sensors, and the N temperature sensors are arranged at equal intervals.

[0035] Optionally, the communication method between the controller and the heating element and the temperature detection element includes one or a combination of wired communication and wireless communication.

[0036] As described above, the wafer cleaning apparatus of this utility model includes a cavity, a support stage, a liquid supply component, a heating component, a temperature detection component, and a controller. The support stage is disposed in the cavity to support the wafer to be cleaned; the liquid supply component is disposed in the cavity and located above the support stage to provide cleaning fluid to the wafer to be cleaned; the heating component is disposed outside the liquid supply component to provide a heat source to the liquid supply component; the temperature detection component is disposed in the cavity to detect the temperature of the liquid supply component; and the controller communicates with the heating component and the temperature detection component.

[0037] This utility model also provides another wafer cleaning device, including a cavity, a support stage, a liquid supply component, a liquid supply component housing, a heat insulation component, a heating component, a temperature detection component, and a controller. The support stage is disposed within the cavity to support the wafer to be cleaned. The liquid supply component is disposed within the cavity and located above the support stage to provide cleaning fluid to the wafer to be cleaned. The liquid supply component housing is disposed within the cavity and located around the liquid supply component, with an accommodating space between the outer wall of the liquid supply component and the inner wall of the liquid supply component housing. The heat insulation component is disposed within the accommodating space and covers the liquid supply component. The heating component is disposed within the accommodating space and located between the heat insulation component and the liquid supply component housing to provide a heat source to the liquid supply component housing. The temperature detection component is disposed within the cavity to detect the temperature of the liquid supply component housing. The controller communicates with the heating component and the temperature detection component.

[0038] This wafer cleaning device utilizes a heating element to effectively heat the liquid supply unit, preventing the formation of ammonium fluoride crystals. The temperature sensor and controller enable automated and convenient temperature control. A cooling element allows for rapid cooling of the liquid supply unit, improving efficiency. A passivation layer prevents the reaction between ammonium fluoride crystals and metal materials, reducing the probability of metal impurities. The liquid supply unit housing effectively protects the unit, preventing reaction between the unit and ammonium fluoride crystals. A heat insulation element prevents heat from affecting the cleaning fluid within the unit. Furthermore, the heat insulation element allows for simultaneous temperature control during wafer cleaning, effectively preventing the formation of ammonium fluoride crystals.

[0039] Therefore, the wafer cleaning device of this invention can improve efficiency and increase product capacity and quality. Attached Figure Description

[0040] Figure 1 The diagram shown is a structural schematic of the wafer cleaning device in Embodiment 1 of this utility model.

[0041] Figure 2 Displayed as Figure 1 A schematic diagram of the cross-sectional structure along the middle AA.

[0042] Figure 3 The diagram shown is a schematic diagram of the wafer cleaning device in Embodiment 2 of this utility model.

[0043] Figure 4 Displayed as Figure 3 Schematic diagram of the cross-sectional structure along the middle BB.

[0044] Figure 5 The diagram shows the module distribution of the wafer cleaning device in this invention.

[0045] Explanation of reference numerals in the attached figures

[0046] Cavities 110 and 210

[0047] 120, 220 support platforms

[0048] 130 and 230 liquid supply units

[0049] 140, 240 heating elements

[0050] 150 and 250 temperature sensing elements

[0051] 160, 260 cooling components

[0052] 170, 270 controllers

[0053] 280 Liquid supply unit housing

[0054] 290 Thermal insulation Detailed Implementation

[0055] The following specific examples illustrate the implementation of this utility model. Those skilled in the art can easily understand other advantages and effects of this utility model from the content disclosed in this specification. This utility model can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of this utility model.

[0056] It should be noted that the illustrations provided in this embodiment are only schematic representations of the basic concept of this utility model. Therefore, the drawings only show the components related to this utility model and are not drawn according to the actual number, shape and size of the components. In actual implementation, the form, quantity and proportion of each component can be arbitrarily changed, and the layout of the components may also be more complex.

[0057] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0058] Example 1

[0059] See Figure 1 and Figure 2 ,in, Figure 2 Displayed as Figure 1 A schematic diagram of the cross-sectional structure along the middle AA. This embodiment provides a wafer cleaning apparatus, which includes:

[0060] Cavity 110;

[0061] A support platform 120 is disposed within the cavity 110 for holding the wafer to be cleaned;

[0062] Liquid supply component 130 is disposed in the cavity 110 and located above the support stage 120, for providing cleaning fluid to the wafer to be cleaned;

[0063] A heating element 140 is disposed on the outside of the liquid supply element 130 to provide a heat source to the liquid supply element 130;

[0064] Temperature detection element 150 is disposed in the cavity 110 to detect the temperature of the liquid supply element 130;

[0065] The controller 170 communicates with the heating element 140 and the temperature detection element 150.

[0066] Specifically, in semiconductor manufacturing processes, to remove various contaminants from wafer surfaces, most processes involve an RCA cleaning step, which uses a mixed solution containing ammonia, hydrogen peroxide, and deionized water to clean the wafer, and an HF cleaning step, which uses a diluted hydrofluoric acid solution to clean the wafer, primarily to remove oxide layers and some silicon surface contaminants. However, during this wet cleaning process, the volatilization reaction of ammonia and hydrogen fluoride forms ammonium fluoride, which easily crystallizes on the surface of production equipment, such as liquid supply components. Ammonium fluoride crystals are corrosive to metals, and long-term accumulation of these crystals can easily detach and contaminate the wafer. The industry typically uses deionized water cleaning to remove ammonium fluoride crystals to avoid contamination of equipment and products.

[0067] In the wafer cleaning process, the wafers mainly undergo cleaning, rinsing, and drying. However, using deionized water for cleaning can affect the efficiency of wafer cleaning, and manual cleaning can introduce metal ions and other contaminants into the equipment.

[0068] The inventors discovered that temperature plays a crucial role in the formation of ammonium fluoride crystals. When the surface temperature of the liquid supply component 130 reaches 45°C or higher, such as 45°C, 50°C, or 65°C, ammonium fluoride crystals will not form on the surface of the liquid supply component 130. Therefore, it is not necessary to clean the surface of the liquid supply component 130 with deionized water. This avoids manual cleaning due to ammonium fluoride crystallization, thereby improving wafer cleaning efficiency, reducing the possibility of external contamination caused by manual intervention, lowering the probability of equipment contamination, and improving product quality.

[0069] The wafer cleaning apparatus in this embodiment can effectively heat the liquid supply component 130 by setting the heating element 140, thereby effectively preventing the formation of ammonium fluoride crystals; and the setting of the temperature detection element 150 and the controller 170 can also realize automated and convenient temperature control.

[0070] As an example, the liquid supply component 130 may include a metal liquid supply component or an organic liquid supply component, which can be selected according to the needs. For example, the liquid supply component 130 may be a stainless steel liquid supply component that is corrosion resistant and has relatively stable performance. Of course, the liquid supply component 130 may also be an organic liquid supply component that is corrosion resistant and has relatively stable performance, such as a PC liquid supply component, a PP liquid supply component, a PEEK liquid supply component, and a PFA liquid supply component, etc.

[0071] As an example, the outer wall of the heating element 140 may also be covered with a passivation layer (not shown), which may include a single layer or a stack of layers composed of PC material layer, PP material layer, PEEK material layer and PFA material layer.

[0072] Specifically, when the outer wall of the heating element 140 has a corrosion-resistant and relatively stable passivation layer, the passivation layer can protect the heating element 140 and the liquid supply element 130, preventing ammonium fluoride crystallization and reaction, thereby reducing the probability of metal contamination, further improving product quality, and extending equipment life, especially when the liquid supply element 130 is a metal liquid supply element. Regarding the selection of the passivation layer, it can include single layers or stacks of materials such as corrosion-resistant and relatively stable PC, PP, PEEK, and PFA, as needed.

[0073] As an example, the heating element 140 may include one or a combination of heating coils, heating wires, and heating films, which may be selected as needed.

[0074] As an example, the liquid supply component 130 may include a liquid supply pipe and a liquid supply nozzle communicating with the liquid supply pipe, and the heating component 140 covers the liquid supply pipe and the liquid supply nozzle.

[0075] Specifically, the shape, quantity, distribution, and material of the liquid supply component 130 can be selected as needed.

[0076] Furthermore, it is preferable that the heating element 140 completely covers the liquid supply pipe and the liquid supply nozzle to provide a uniform heat source for the liquid supply element 130. However, it is not limited to this. If necessary, the heating element 140 may also partially cover the liquid supply element 130. For example, the heating element 140 may be composed of a combination of multiple heating components arranged at equal intervals.

[0077] As an example, the wafer cleaning apparatus may include N > 1 temperature sensors 150, and the N temperature sensors 150 are preferably arranged at equal intervals.

[0078] Specifically, the temperature sensing element 150 is configured to facilitate the acquisition of the temperature of the liquid supply element 130, so as to allow for timely adjustment of the temperature of the outer wall of the liquid supply element 130, wherein, for example... Figure 1 The temperature detection element 150 can be disposed on the outside of the heating element 140. In order to obtain a more accurate temperature detection result, the probe of the temperature detection element 150 can be in contact with the outer wall of the liquid supply element 130. Of course, the temperature detection element 150 can also be disposed on the inner wall of the cavity 110 as needed, such as an infrared thermometer. The specific type of the temperature detection element 150 is not excessively limited here.

[0079] like Figure 1 To obtain more accurate temperature detection results, in this embodiment, the wafer cleaning device includes 8 temperature detection elements 150, that is, the value of N is 8, and preferably the N temperature detection elements 150 are arranged at equal intervals. However, the value and distribution of N are not limited to this. If needed, N can also be 1, 4, 6, etc.

[0080] Furthermore, the wafer cleaning apparatus may also include a cooling element 160, which is disposed within the cavity 110 to provide a cold source.

[0081] Specifically, when the cooling element 160 is provided, the liquid supply element 130 can be cooled in a timely and effective manner through the cooling element 160, thereby conveniently controlling the temperature of the liquid supply element 130, reducing the time required for cooling, and making timely adjustments to the process steps to avoid affecting the cleaning fluid in the liquid supply element 130.

[0082] Furthermore, the cooling component 160 may include one or a combination of air-cooled cooling components and liquid-cooled cooling components.

[0083] Specifically, the gas cooling component 160 may include a nitrogen cooling component or an inert gas cooling component, so as to perform gas cooling by using nitrogen, helium, argon, etc., to avoid the influence of cooling gas on the process. When using a gas cooling component, the operation can be achieved using existing wafer cleaning equipment without the need to introduce additional equipment components, thereby reducing the cost of equipment modification and improving the convenience of operation while achieving cooling.

[0084] Of course, the cooling component 160 can also be a liquid cooling component as needed, such as a water-cooled pipe disposed around the liquid supply component 130 or a water-cooled pipe disposed on the inner wall of the cavity 110.

[0085] In this embodiment, as Figure 1 Three nitrogen cooling elements are provided on the inner wall of the cavity 110 to rapidly cool the liquid supply element 130. The specific type, quantity and distribution of the cooling elements 160 can be selected as needed.

[0086] As an example, the communication method between the controller 170 and the heating element 140, the cooling element 160 and the temperature detection element 150 may include one or a combination of wired communication and wireless communication.

[0087] Specifically, the controller 170 enables automated detection and control of the heating element 140, the cooling element 160, and the temperature detection element 150, thereby improving timeliness and increasing product capacity and quality. The communication method between the controller 170 and the heating element 140, the cooling element 160, and the temperature detection element 150 can include one or a combination of wired and wireless communication, which can be selected as needed.

[0088] like Figure 5 This diagram illustrates the module distribution of the wafer cleaning apparatus of this invention. The controller 170 can easily start or stop the heating element 140, while the temperature sensor 150 can promptly acquire the temperature of the liquid supply element 130 and feed the information back to the controller 170. The controller 170 then determines whether cooling is needed and activates the cooling element 160 to cool the liquid supply element 130 until the temperature reported by the temperature sensor 150 meets the requirements. Therefore, the entire temperature regulation, whether heating or cooling, can be automatically controlled, thus avoiding the influence of human operation on aspects such as contaminants and inaccuracy.

[0089] Example 2

[0090] See Figure 3 and Figure 4 ,in, Figure 4 Displayed as Figure 3 A schematic diagram of the cross-sectional structure along the BB edge. This embodiment provides another wafer cleaning apparatus, which includes:

[0091] Cavity 210;

[0092] A support platform 220 is disposed within the cavity 210 for supporting the wafer to be cleaned;

[0093] Liquid supply component 230 is disposed in the cavity 210 and located above the support stage 220, for providing cleaning solution to the wafer to be cleaned;

[0094] Liquid supply housing 280 is disposed inside the cavity 210 and located around the liquid supply component 230, and there is an accommodating space between the outer wall of the liquid supply component 230 and the inner wall of the liquid supply housing 280.

[0095] A heat insulation component 290 is disposed within the accommodating space and covers the liquid supply component 230;

[0096] A heating element 240 is disposed within the accommodating space and located between the heat insulation element 290 and the liquid supply element housing 280, for providing a heat source to the liquid supply element housing 280;

[0097] Temperature detection element 250 is disposed in the cavity 210 to detect the temperature of the liquid supply component housing 280;

[0098] The controller 270 communicates with the heating element 240 and the temperature detection element 250.

[0099] The wafer cleaning apparatus of this embodiment, through the setting of the heating element 240, can effectively heat the liquid supply element 230, effectively preventing the formation of ammonium fluoride crystals; the setting of the temperature detection element 250 and the controller 270 can realize automated and convenient temperature control; the setting of the liquid supply element housing 280 can effectively protect the liquid supply element 230 and avoid the reaction between the liquid supply element 230 and ammonium fluoride crystals; the setting of the heat insulation element 290 can prevent heat from affecting the cleaning liquid in the liquid supply element 230. For example, during the temperature control process, due to the setting of the heat insulation element 290, the temperature can be controlled simultaneously during the wafer cleaning process, so as to effectively prevent the formation of ammonium fluoride crystals.

[0100] Furthermore, the wafer cleaning apparatus may also include a cooling element 260, which is disposed within the cavity 110 to provide a cold source.

[0101] Specifically, when the cooling component 260 is provided, the liquid supply component housing 280 can be cooled in a timely and effective manner through the cooling component 260, thereby conveniently controlling the temperature of the liquid supply component housing 280, reducing the time required for cooling, and making timely adjustments to the process steps.

[0102] The main difference between this embodiment and the wafer cleaning device in Embodiment 1 is the arrangement of the liquid supply housing 280 and the heat insulation component 290. For the specific structure and effect of the wafer cleaning device, please refer to Embodiment 1, which will not be repeated here. The following only introduces the differences.

[0103] As an example, the liquid supply housing 280 may include a metal housing, which may include a stainless steel housing.

[0104] Specifically, when the liquid supply component housing 280 is made of stainless steel, it facilitates heat conduction, resulting in more uniform heating and faster cooling of the liquid supply component 230. Furthermore, the stainless steel housing has excellent corrosion resistance, reducing the probability of metal contaminant generation. The specific type of metal housing is not excessively limited here. Of course, depending on the needs, the liquid supply component housing 280 can also be made of organic materials with good corrosion resistance, such as PC, PP, PEEK, and PFA housings.

[0105] As an example, when the liquid supply housing 280 adopts the metal housing, the periphery of the metal housing may also be covered with a passivation layer (not shown). The passivation layer may include a single layer or a stack of layers composed of PC material layer, PP material layer, PEEK material layer and PFA material layer.

[0106] Specifically, when the outer periphery of the metal casing has a corrosion-resistant and relatively stable passivation layer, the heating element 240 and the liquid supply element 230 can be protected by the corrosion-resistant and relatively stable passivation layer, preventing ammonium fluoride crystallization and reaction with it, thereby reducing the probability of metal contamination, further improving product quality, and extending the life of the equipment. Regarding the selection of the passivation layer, it can include single layers or stacks of materials such as corrosion-resistant and relatively stable PC, PP, PEEK, and PFA, as needed.

[0107] In summary, the wafer cleaning apparatus of this utility model includes a cavity, a support stage, a liquid supply component, a heating component, a temperature detection component, and a controller. The support stage is disposed within the cavity to support the wafer to be cleaned; the liquid supply component is disposed within the cavity and located above the support stage to provide cleaning fluid to the wafer to be cleaned; the heating component is disposed outside the liquid supply component to provide a heat source to the liquid supply component; the temperature detection component is disposed within the cavity to detect the temperature of the liquid supply component; and the controller communicates with the heating component and the temperature detection component.

[0108] This utility model also provides another wafer cleaning device, including a cavity, a support stage, a liquid supply component, a liquid supply component housing, a heat insulation component, a heating component, a temperature detection component, and a controller. The support stage is disposed within the cavity to support the wafer to be cleaned. The liquid supply component is disposed within the cavity and located above the support stage to provide cleaning fluid to the wafer to be cleaned. The liquid supply component housing is disposed within the cavity and located around the liquid supply component, with an accommodating space between the outer wall of the liquid supply component and the inner wall of the liquid supply component housing. The heat insulation component is disposed within the accommodating space and covers the liquid supply component. The heating component is disposed within the accommodating space and located between the heat insulation component and the liquid supply component housing to provide a heat source to the liquid supply component housing. The temperature detection component is disposed within the cavity to detect the temperature of the liquid supply component housing. The controller communicates with the heating component and the temperature detection component.

[0109] This wafer cleaning device utilizes a heating element to effectively heat the liquid supply unit, preventing the formation of ammonium fluoride crystals. The temperature sensor and controller enable automated and convenient temperature control. A cooling element allows for rapid cooling of the liquid supply unit, improving efficiency. A passivation layer prevents the reaction between ammonium fluoride crystals and metal materials, reducing the probability of metal impurities. The liquid supply unit housing effectively protects the unit, preventing reaction between the unit and ammonium fluoride crystals. A heat insulation element prevents heat from affecting the cleaning fluid within the unit. Furthermore, the heat insulation element allows for simultaneous temperature control during wafer cleaning, effectively preventing the formation of ammonium fluoride crystals.

[0110] Therefore, the wafer cleaning device of this invention can improve efficiency, as well as increase product capacity and quality. Thus, this invention effectively overcomes the various shortcomings of the prior art and has high industrial application value.

[0111] The above embodiments are merely illustrative of the principles and effects of this utility model and are not intended to limit the scope of this utility model. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of this utility model. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in this utility model should still be covered by the claims of this utility model.

Claims

1. A wafer cleaning apparatus, characterized in that, The wafer cleaning apparatus includes: cavity; A support platform, disposed within the cavity, is used to support the wafer to be cleaned; A liquid supply unit is disposed in the cavity and located above the support stage, for supplying cleaning fluid to the wafer to be cleaned; A heating element is disposed on the outside of the liquid supply element to provide a heat source to the liquid supply element; A temperature sensor is disposed within the cavity to detect the temperature of the liquid supply component; The controller communicates with the heating element and the temperature sensing element.

2. The wafer cleaning apparatus according to claim 1, characterized in that: The outer wall of the heating element is also covered with a passivation layer, which includes a single layer or a combination of PC material layer, PP material layer, PEEK material layer and PFA material layer.

3. A wafer cleaning apparatus, characterized in that, The wafer cleaning apparatus includes: cavity; A support platform, disposed within the cavity, is used to support the wafer to be cleaned; A liquid supply unit is disposed in the cavity and located above the support stage, for supplying cleaning fluid to the wafer to be cleaned; A liquid supply component housing is disposed within the cavity and located around the liquid supply component, and there is an accommodating space between the outer wall of the liquid supply component and the inner wall of the liquid supply component housing; A heat insulation component, wherein the heat insulation component is disposed within the accommodating space and covers the liquid supply component; A heating element is disposed within the accommodating space and located between the heat insulation element and the liquid supply element housing, for providing a heat source to the liquid supply element housing; A temperature sensor is disposed within the cavity to detect the temperature of the liquid supply component housing; The controller communicates with the heating element and the temperature sensing element.

4. The wafer cleaning apparatus according to claim 3, characterized in that: The liquid supply component housing includes a metal housing, and the metal housing includes a stainless steel housing.

5. The wafer cleaning apparatus according to claim 4, characterized in that: The outer periphery of the metal casing is also covered with a passivation layer, which includes a single layer or a combination of PC material layers, PP material layers, PEEK material layers and PFA material layers.

6. The wafer cleaning apparatus according to claim 1 or 3, characterized in that: It also includes a cooling component, which is disposed in the cavity to provide a cold source and communicates with the controller; The cooling component includes one or a combination of air-cooled cooling components and liquid-cooled cooling components, wherein the air-cooled cooling component includes a nitrogen cooling component or an inert gas cooling component.

7. The wafer cleaning apparatus according to claim 1 or 3, characterized in that: The heating element includes one or a combination of a heating coil, a heating wire, and a heating film.

8. The wafer cleaning apparatus according to claim 1 or 3, characterized in that: The liquid supply component includes a liquid supply pipe and a liquid supply nozzle connected to the liquid supply pipe, and the heating component covers the liquid supply pipe and the liquid supply nozzle.

9. The wafer cleaning apparatus according to claim 1 or 3, characterized in that: It includes N>1 temperature sensors, and the N temperature sensors are arranged at equal intervals.

10. The wafer cleaning apparatus according to claim 1 or 3, characterized in that: The communication method between the controller and the heating element and the temperature detection element includes one or a combination of wired communication and wireless communication.

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