High-temperature-resistant power supply chip

Abstract

The utility model discloses a high-temperature-resistant power supply chip, and relates to the technical field of power supply chips. Comprising an aluminum oxide ceramic packaging shell, a copper sheet is embedded in the inner bottom of the aluminum oxide ceramic packaging shell, a lead frame is installed on the copper sheet, pins are arranged on the lead frame, a silicon carbide substrate is installed in the middle of the lead frame, and a silicon wafer is installed on the silicon carbide substrate. According to the high-temperature-resistant power supply chip, the high-temperature-resistant silicon carbide substrate is adopted in the core area, the silicon wafer is soldered on the substrate, high heat stability and excellent heat conduction performance are achieved, the chip is internally provided with the copper sheet and the vapor chamber which are high in heat conduction coefficient, the heat dissipation structure on the surface of the chip can be optimized, the heat dissipation area can be increased, heat can be effectively conducted out, and the service life of the chip is prolonged. And an aluminum oxide ceramic packaging shell with a high melting point and high thermal stability is adopted for packaging, so that the high-temperature resistance of the chip can be improved, and the stable operation of the chip in a high-temperature environment is ensured.

Description

Technical Field

[0001] This utility model relates to the field of power chip technology, specifically a high-temperature resistant power chip. Background Technology

[0002] As a key component of electronic devices, the core function of power chips is to precisely regulate voltage and current to ensure stable operation of the equipment. They can not only stabilize unstable power supply voltage to the required value, but also realize the conversion from high voltage to low voltage, improve power efficiency, and provide overcurrent and overvoltage protection for the equipment.

[0003] Existing power circuit boards typically combine power chips with other electronic components in a modular design. During use, the power chips and other electronic components are prone to generating high temperatures. Under prolonged high-temperature environments, the performance of the power chips is easily reduced, shortening their lifespan. Utility Model Content

[0004] This invention provides a high-temperature resistant power chip to solve the problems in the background art.

[0005] To achieve the above objectives, this utility model provides the following technical solution: a high-temperature resistant power chip, comprising an alumina ceramic package shell, a copper sheet embedded in the bottom of the alumina ceramic package shell, a lead frame mounted on the copper sheet, and pins provided on the lead frame, a silicon carbide substrate mounted in the middle of the lead frame, and a silicon wafer mounted on the silicon carbide substrate, a heat spreader plate embedded in the top of the alumina ceramic package shell, and a lower boss provided in the middle of the heat spreader plate, the bottom surface of the lower boss contacting the top surface of the silicon wafer, and epoxy resin potting compound filling the alumina ceramic package shell, with the epoxy resin potting compound covering the silicon wafer.

[0006] Furthermore, the bottom of the alumina ceramic encapsulation shell is provided with a stepped opening, and the copper sheet is embedded in the stepped opening.

[0007] Furthermore, the bottom surface of the copper sheet is flush with the bottom of the alumina ceramic encapsulation shell, and its top surface is flush with the inner bottom surface of the alumina ceramic encapsulation shell.

[0008] Furthermore, the alumina ceramic encapsulation shell has clearance openings on both sides, and the pins extend outward from the clearance openings.

[0009] Furthermore, the pins are provided in total of 8, and are connected to the silicon wafer wafer through metal wires.

[0010] Furthermore, the top of the alumina ceramic encapsulation shell is provided with an assembly port, and the heat spreader is embedded in the assembly port.

[0011] Furthermore, the lower boss is located at the bottom of the heat spreader plate and extends into the alumina ceramic encapsulation shell through the self-assembly port. The top surface of the heat spreader plate is flush with the top of the alumina ceramic encapsulation shell.

[0012] Compared with the prior art, this utility model provides a high-temperature resistant power chip, which has the following beneficial effects:

[0013] This high-temperature resistant power chip uses a high-temperature resistant silicon carbide substrate in its core area, with silicon wafers soldered onto the substrate. It has high thermal stability and excellent thermal conductivity. The chip is equipped with copper sheets and heat spreaders with high thermal conductivity, which optimizes the heat dissipation structure on the chip surface, increases the heat dissipation area, and effectively conducts heat away to reduce the chip's operating temperature. The packaging uses an alumina ceramic package with a high melting point and high thermal stability, which can improve the chip's high-temperature resistance and ensure stable operation of the chip in high-temperature environments. Attached Figure Description

[0014] Figure 1 This is a schematic diagram of the structure of this utility model;

[0015] Figure 2 This is a side view of the present invention;

[0016] Figure 3 This is a top view of the present invention.

[0017] In the diagram: 1. Alumina ceramic package; 2. Copper sheet; 3. Lead frame; 4. Pin; 5. Silicon carbide substrate; 6. Silicon wafer; 7. Heat sink; 8. Lower boss; 9. Epoxy resin potting compound; 10. Stepped opening; 11. Clearance opening; 12. Assembly port. Detailed Implementation

[0018] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.

[0019] Please see Figures 1-3This utility model discloses a high-temperature resistant power chip, including an alumina ceramic package shell 1. A copper sheet 2 is embedded in the bottom of the alumina ceramic package shell 1. A lead frame 3 is mounted on the copper sheet 2, and pins 4 are provided on the lead frame 3. A silicon carbide substrate 5 is mounted in the middle of the lead frame 3, and a silicon wafer 6 is mounted on the silicon carbide substrate 5. A heat spreader 7 is embedded in the top of the alumina ceramic package shell 1, and a lower boss 8 is provided in the middle of the heat spreader 7. The bottom surface of the lower boss 8 is in contact with the top surface of the silicon wafer 6. The core area uses a high-temperature resistant silicon carbide substrate 5. The silicon wafer 6 is soldered onto the substrate, which has high thermal stability and excellent thermal conductivity. A copper sheet 2 and a heat spreader 7 with high thermal conductivity are set inside the chip to optimize the heat dissipation structure on the chip surface, increase the heat dissipation area, and effectively conduct heat away to reduce the chip's operating temperature. The packaging adopts an alumina ceramic encapsulation shell 1 with high melting point and high thermal stability, which can improve the chip's high temperature resistance and ensure the chip's stable operation in high temperature environments. The alumina ceramic encapsulation shell 1 is filled with epoxy resin potting compound 9, and the epoxy resin potting compound 9 covers the silicon wafer 6.

[0020] Specifically, the bottom of the alumina ceramic encapsulation shell 1 is provided with a stepped opening 10, and the copper sheet 2 is embedded in the stepped opening 10.

[0021] In this embodiment, the alumina ceramic encapsulation shell 1 has a high melting point and excellent high-temperature stability, and can be used at temperatures up to 1650°C, making it very suitable for applications in high-temperature environments. The stepped opening 10 is an assembly structure to facilitate the installation and fixation of the copper sheet 2.

[0022] Specifically, the bottom surface of the copper sheet 2 is flush with the bottom of the alumina ceramic encapsulation shell 1, and its top surface is flush with the inner bottom surface of the alumina ceramic encapsulation shell 1.

[0023] In this embodiment, the advantage of copper sheet 2 is its good thermal conductivity, which can quickly conduct heat from inside the chip to the atmosphere, resulting in excellent heat dissipation.

[0024] Specifically, the alumina ceramic encapsulation shell 1 has clearance openings 11 on both sides, and the pin 4 extends outward from the clearance openings 11.

[0025] In this implementation scheme, the avoidance port 11 is, as the name suggests, a avoidance design to facilitate the outward extension of pin 4.

[0026] Specifically, there are a total of 8 pins 4, which are connected to the silicon wafer 6 via metal wires.

[0027] In this embodiment, the lead frame 3 serves as the chip carrier of the integrated circuit. It is a key structural component that uses bonding materials (gold wire, aluminum wire, copper wire) to realize the electrical connection between the internal circuit leads of the chip and the external leads, forming an electrical circuit. It acts as a bridge to connect with external wires. The pins 4 are thin metal strips on the lead frame 3 that extend from inside the chip and are used to connect with external circuits, thereby transmitting the chip's electrical signals to external circuits or devices.

[0028] Specifically, the top of the alumina ceramic encapsulation shell 1 is provided with an assembly port 12, and the heat spreader 7 is embedded in the assembly port 12.

[0029] In this embodiment, the assembly port 12 is an assembly structure to facilitate the installation and fixation of the heat spreader 7. The heat spreader 7 is a vacuum cavity with a fine structure on the inner wall, usually made of copper, and is sealed with a small amount of working liquid, such as deionized water or acetone. When the heat generated by the heat source is conducted to the heat spreader 7, the liquid inside the plate is heated and evaporates into steam. The steam absorbs heat and expands rapidly and flows from the high-pressure area to the low-pressure area, and quickly diffuses to the cooling area of ​​the heat spreader 7. In the cooling area, the steam comes into contact with the cooler inner wall and quickly condenses into liquid, releasing heat and forming liquid. The liquid returns to the heat source through capillary action. This cycle repeats, efficiently removing heat from the source.

[0030] Specifically, the lower boss 8 is located at the bottom of the heat spreader 7 and is inserted into the alumina ceramic encapsulation shell 1 through the self-assembly port 12. The top surface of the heat spreader 7 is flush with the top of the alumina ceramic encapsulation shell 1.

[0031] In this embodiment, the lower boss 8 is a bonding structure used for bonding the heat spreader 7 and the silicon wafer 6 together, thereby conducting heat.

[0032] In use, the core area uses a high-temperature resistant silicon carbide substrate 5, and the silicon wafer 6 is soldered onto the substrate. It has high thermal stability and excellent thermal conductivity. A copper sheet 2 with high thermal conductivity and a heat spreader 7 are set inside the chip to optimize the heat dissipation structure on the chip surface, increase the heat dissipation area, and effectively conduct heat away to reduce the chip's operating temperature. The packaging uses an alumina ceramic package 1 with high melting point and high thermal stability, which can improve the chip's high-temperature resistance and thus ensure the chip's stable operation in high-temperature environments.

[0033] In summary, this high-temperature resistant power chip uses a high-temperature resistant silicon carbide substrate 5 in its core area, with a silicon wafer 6 soldered onto the substrate. This substrate has high thermal stability and excellent thermal conductivity. The chip incorporates a copper sheet 2 with high thermal conductivity and a heat spreader 7, which optimizes the heat dissipation structure on the chip surface, increases the heat dissipation area, and effectively dissipates heat to reduce the chip's operating temperature. The packaging uses an alumina ceramic package 1 with a high melting point and high thermal stability, which improves the chip's high-temperature resistance and ensures stable operation of the chip in high-temperature environments.

[0034] Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the present invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A high-temperature resistant power chip, comprising an alumina ceramic package (1), characterized in that: The alumina ceramic package (1) has a copper sheet (2) embedded in its inner bottom. A lead frame (3) is mounted on the copper sheet (2), and pins (4) are provided on the lead frame (3). A silicon carbide substrate (5) is mounted in the middle of the lead frame (3), and a silicon wafer (6) is mounted on the silicon carbide substrate (5). A heat spreader (7) is embedded in the top of the alumina ceramic package (1), and a lower boss (8) is provided in the middle of the heat spreader (7). The bottom surface of the lower boss (8) is in contact with the top surface of the silicon wafer (6). The alumina ceramic package (1) is filled with epoxy resin potting compound (9), and the epoxy resin potting compound (9) covers the silicon wafer (6).

2. The high-temperature resistant power chip according to claim 1, characterized in that: The bottom of the alumina ceramic encapsulation shell (1) is provided with a stepped opening (10), and the copper sheet (2) is embedded in the stepped opening (10).

3. The high-temperature resistant power chip according to claim 1, characterized in that: The bottom surface of the copper sheet (2) is flush with the bottom of the alumina ceramic encapsulation shell (1), and its top surface is flush with the inner bottom surface of the alumina ceramic encapsulation shell (1).

4. The high-temperature resistant power chip according to claim 1, characterized in that: The alumina ceramic encapsulation shell (1) has clearance openings (11) on both sides, and the pin (4) extends outward from the clearance openings (11).

5. A high-temperature resistant power chip according to claim 1, characterized in that: The pins (4) are provided in total of 8, and are connected to the silicon wafer (6) through metal wires.

6. A high-temperature resistant power chip according to claim 1, characterized in that: The top of the alumina ceramic encapsulation shell (1) is provided with an assembly port (12), and the heat spreader (7) is embedded in the assembly port (12).

7. A high-temperature resistant power chip according to claim 6, characterized in that: The lower boss (8) is located at the bottom of the heat spreader (7) and enters the alumina ceramic encapsulation shell (1) through the assembly port (12). The top surface of the heat spreader (7) is flush with the top of the alumina ceramic encapsulation shell (1).

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