In-situ reaction sintered silicon carbide ceramic and preparation method thereof

By using in-situ pyrolysis of organic precursors and segmented temperature-controlled sintering processes, the problems of uneven carbon source distribution and impurity introduction were solved, resulting in high density and excellent mechanical properties of silicon carbide ceramics.

CN121974701APending Publication Date: 2026-05-05湖南德智新材料股份有限公司
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Patent Information

Application Number
CN202610397874.8
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2026-03-30
Publication Date
2026-05-05

AI Technical Summary

Technical Problem

The uneven distribution of carbon source, the introduction of impurities, and insufficient density in traditional reaction sintering silicon carbide ceramic technology limit the mechanical properties of the material.

Method used

The process employs in-situ pyrolysis of organic precursors as carbon sources, vacuum grouting molding, and segmented temperature-controlled sintering. Through prolonged stirring, the organic precursors are uniformly coated onto the surface of silicon carbide powder. Combined with vacuum grouting and segmented temperature control, the pressure of the argon atmosphere is optimized at different temperature stages.

Benefits of technology

It significantly improves the density and mechanical properties of silicon carbide ceramics, enhances the uniformity of carbon source distribution, reduces the introduction of impurities, and significantly improves the density and uniformity of the material.

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Abstract

The invention relates to the technical field of preparation of silicon carbide ceramics, in particular to an in-situ reaction sintered silicon carbide ceramic and a preparation method thereof.The preparation method comprises the following technological stages which are conducted in sequence: S1, preparation of silicon carbide slurry, specifically, organic matter precursor raw materials are weighed according to the mass content percentage to form the silicon carbide slurry; s2, vacuum grouting: injecting the silicon carbide slurry in the vacuum grouting tank into the shaping mold from the bottom of the shaping mold to form a silicon carbide green body; and S3, in-situ reaction sintering is conducted, specifically, the silicon carbide green body is placed in a sintering furnace, heating, heat preservation and cooling are conducted on the silicon carbide green body in the argon atmosphere through a segmented temperature control technology, and the silicon carbide ceramic is obtained. The silicon carbide ceramic prepared by the method disclosed by the invention has relatively high density and excellent mechanical properties.
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