Crystal growth equipment and crucible mechanism thereof

Abstract

The utility model discloses crystal growth equipment and a crucible mechanism thereof. The crucible mechanism comprises a crucible; the crucible lifting device comprises a crucible lifting shaft and a crucible lifting driving part for driving the crucible lifting shaft to do lifting motion; the crucible heating device comprises a first heating assembly which comprises a first heating part for heating the bottom, a first pair of electrodes connected with the first heating part, and a first heating lifting mechanism for driving the first heating part to maintain a preset distance from the bottom of the crucible through lifting motion; wherein the first heating part comprises a plate-shaped main body part and lugs on two opposite sides, the plate-shaped main body part is formed by continuously bending and splicing at least two parallel strip-shaped heating elements on a plane, and a space for a crucible lifting shaft to penetrate through is formed between the at least two parallel strip-shaped heating elements; a mounting part for connecting the first heating part to the first counter electrode is formed on the lug; and the second heating assembly comprises an annular second heating part for heating the side wall and a second pair of electrodes connected to the second heating part.

Description

Technical Field

[0001] This application relates to the technical field of crystal manufacturing, and more particularly to a crystal growth apparatus and its crucible mechanism. Background Technology

[0002] Crystal growth equipment, as a key piece of equipment for manufacturing single-crystal materials, is widely used in semiconductors, optoelectronics, and solar cells. By precisely controlling temperature, stretching rate, and atmosphere conditions, crystal growth equipment can transform raw materials such as silicon, sapphire, and silicon carbide into single-crystal materials with specific crystal structures to meet specific application requirements, based on growth methods such as Czochralski, zone melting, and vapor deposition.

[0003] Taking the Czochralski method as an example, heating elements need to be installed on the side walls and bottom of the crucible to heat the solid silicon material into molten liquid silicon and maintain the molten temperature. However, as the crucible rises during the silicon rod growth process, the distance between the heating elements on the side walls and bottom and the crucible increases due to their fixed positions, leading to temperature fluctuations in the silicon material inside the crucible and affecting the crystal growth quality. Furthermore, some manufacturers use separate heaters to heat the crucible. These separate heaters require independent operation due to physical isolation, making it difficult to coordinate the temperatures of each module, further affecting the temperature inside the crucible.

[0004] Therefore, how to provide a crucible heating device that can improve the heating effect and ensure a uniform thermal field inside the crucible is a technical problem that urgently needs to be solved by those skilled in the art. Summary of the Invention

[0005] In view of the shortcomings of the above-mentioned related technologies, the purpose of this application is to provide a crystal growth device and its crucible mechanism to solve the technical problems of poor heating effect of the heating part of the split crucible and uneven thermal field inside the crucible caused by the fixed setting position.

[0006] To achieve the above and other related objectives, a first aspect of this application provides a crucible mechanism, comprising: a crucible including a receiving space for holding silicon material formed by side walls and a bottom; a crucible lifting device disposed at the bottom of the crucible, including a crucible lifting shaft connected to the bottom and a crucible lifting drive unit for driving the crucible lifting shaft to perform lifting and lowering movements; and a crucible heating device, comprising: a first heating assembly including a first heating part disposed at the bottom of the crucible to heat the bottom, a first pair of electrodes connected to opposite sides of the first heating part, and a heating element connected to the first pair of electrodes to drive the crucible material through lifting and lowering movements. A first heating lifting mechanism maintains a preset distance between the first heating part and the bottom of the crucible; wherein, the first heating part includes a plate-shaped main body formed by continuously bending and splicing at least two parallel strip heating elements on a plane, and lugs located on opposite sides of the main body, with a space between the at least two parallel strip heating elements for the crucible lifting shaft to pass through, and mounting portions for connecting the first heating part to the first pair of electrodes formed on the lugs; a second heating assembly includes an annular second heating part arranged around the sidewall to heat the sidewall, and a second pair of electrodes connected to opposite sides of the second heating part.

[0007] In some embodiments disclosed in the first aspect of this application, the centerline of the crucible lifting shaft is located on a first plane with the centerlines of the two electrodes in the first pair of electrodes, and on a second plane with the centerlines of the two electrodes in the second pair of electrodes.

[0008] In some embodiments disclosed in the first aspect of this application, the second heating assembly further includes a second heating lifting mechanism connected to the second pair of electrodes to maintain the second heating part at a preset height position in the crucible through lifting and lowering motion.

[0009] In some embodiments disclosed in the first aspect of this application, the second heating part includes a main body formed by continuously bending a strip-shaped heating element in the vertical direction and connecting the ends together, and connecting parts located on opposite sides of the main body, the connecting parts being used to connect the second heating part to the second pair of electrodes.

[0010] In some embodiments disclosed in the first aspect of this application, the first heating lifting mechanism or the second heating lifting mechanism includes a heating lifting part connected to a corresponding electrode pair, and a heating lifting drive part for driving the heating lifting part to perform lifting motion.

[0011] In some embodiments disclosed in the first aspect of this application, the heating lifting unit includes a base, a lifting screw is disposed in the base, and a sliding member connected to a corresponding electrode pair is disposed on the lifting screw; the heating lifting drive unit is configured to include a lifting motor for driving the sliding member to slide on the lifting screw.

[0012] In some embodiments disclosed in the first aspect of this application, the number of the first heating lifting mechanism or the second heating lifting mechanism is configured to be one to connect any one of the electrodes in the corresponding electrode pair.

[0013] In some embodiments disclosed in the first aspect of this application, the number of the first heating lifting mechanism or the second heating lifting mechanism is configured to be two to respectively connect to two electrodes in a corresponding electrode pair.

[0014] In some embodiments disclosed in the first aspect of this application, a temperature monitoring device disposed around the crucible to obtain temperature data of the crucible, and a control device connected to the temperature monitoring device to control the moving distance and moving speed of the first heating lifting mechanism or the second heating lifting mechanism based on the temperature data.

[0015] A second aspect of this application provides a crystal growth apparatus, comprising: a furnace body, configured with a crucible mechanism as described in any embodiment of the first aspect of this application; a crystal stretching assembly, disposed above the furnace body, for stretching and growing a single crystal silicon rod; and an atmosphere control device for supplying gas into the furnace body and drawing gas from the furnace body to control the atmosphere within the furnace body.

[0016] In some embodiments disclosed in the second aspect of this application, the furnace body has a furnace base plate with a plurality of holes through which a first pair of electrodes, a second pair of electrodes, and a crucible lifting shaft pass; wherein the holes through which the crucible lifting shaft passes are arranged at the center of the furnace base plate, and the two holes through which the first pair of electrodes and the two holes through which the second pair of electrodes pass are collinear with the central hole.

[0017] In summary, the crystal growth equipment and crucible mechanism provided in this application, by incorporating a crucible heating device including a first heating component and a second heating component within the crucible mechanism, can respectively heat the bottom and sidewalls of the crucible. By configuring the first heating component as a plate-shaped main body formed by continuously bending and assembling at least two parallel strip-shaped heating elements on a plane, and lugs located on opposite sides of the main body, and configuring the second heating component as an annular structure surrounding the crucible sidewalls, a separate design for the crucible bottom and sidewalls is avoided, reducing the generation of temperature gradients and making the crucible heated more uniformly. By incorporating a liftable first heating lifting mechanism connected to a first pair of electrodes in the first heating component, the first heating component can maintain a preset distance from the bottom of the crucible, thereby ensuring a balanced thermal field within the crucible during crystal growth. Attached Figure Description

[0018] The specific features involved in this application are shown in the appended claims. The features and advantages of the invention can be better understood by referring to the exemplary embodiments and accompanying drawings described in detail below. A brief description of the drawings is as follows:

[0019] Figure 1 The diagram shown is a schematic representation of the external structure of the furnace body in one embodiment of this application.

[0020] Figure 2 The diagram shown is a schematic representation of the internal structure of the furnace body in one embodiment of this application.

[0021] Figure 3 The diagram shown is a schematic representation of the structure of the first heating component in one embodiment of this application.

[0022] Figure 4 This application is displayed. Figure 3 A schematic diagram of the structure of the first heating element in the embodiment shown.

[0023] Figure 5 The diagram shown is a structural schematic of the first heating lifting mechanism in one embodiment of this application.

[0024] Figure 6 The diagram shown is a structural schematic of the second heating component in one embodiment of this application.

[0025] Figure 7 The diagram shown is a structural schematic of the furnace chassis in one embodiment of this application.

[0026] Figure 8 The diagram shown is a schematic representation of a crucible mechanism disposed on a furnace bottom plate in one embodiment of this application. Detailed Implementation

[0027] The following specific embodiments illustrate the implementation of this application. Those skilled in the art can easily understand the advantages and technical effects of this application from the content disclosed in this specification. In the following description, some embodiments may be referenced to the accompanying drawings. It should be understood that other embodiments not shown in the drawings may also be used, and changes in specific structures, parts or mechanisms, components, and operations may be made without departing from the spirit and scope of this application. The following detailed description should not be considered limiting, and the scope of the embodiments of this application is limited only by the claims published in this application. The terminology used herein is for describing particular embodiments only and is not intended to limit this application.

[0028] It should be understood that although the terms first, second, or third, etc., may be used herein to describe various elements or parameters in some embodiments, these elements or parameters should not be limited by these terms. These terms are used only to distinguish one element or parameter from another, and not to define the order, priority, or importance of multiple elements. For example, a first heating component may be referred to as a second heating component, and similarly, a second heating component may be referred to as a first heating component, without departing from the scope of the various described embodiments.

[0029] Furthermore, as used herein, the singular forms “a,” “an,” and “the” are intended to include the plural forms as well, unless the context indicates otherwise. It should be further understood that the terms “comprising,” “including,” and “including” indicate the presence of the stated features, steps, operations, elements, components, items, kinds, and / or groups, but do not exclude the presence, occurrence, or addition of one or more other features, steps, operations, elements, components, items, kinds, and / or groups. For example, a process, method, system, product, or device that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to these processes, methods, products, or devices. Additionally, the term “and / or,” which may be used hereinafter, describes the relationship between related objects, indicating that three relationships may exist; for example, A and / or B can represent: A alone, A and B simultaneously, and B alone. Furthermore, the character “ / ”, unless otherwise specified, generally indicates that the preceding and following related objects have an “and / or” relationship. Additionally, in the description of embodiments of this application, “multiple” refers to two or more. Furthermore, the terms “or” and “and / or” as used herein are interpreted as inclusive, or mean either one or any combination thereof. Exceptions to this definition only arise when a combination of elements, functions, steps, or operations is inherently mutually exclusive in some way.

[0030] It should also be understood that when an element, such as a layer, region, or substrate, is referred to as being "on" another element or extending "on" another element, the element may be directly on or directly extending onto the other element, or intermediate elements may be present. Conversely, when an element is referred to as being "directly on" another element or "directly extending onto" another element, no intermediate elements are present. It will also be understood that when an element is referred to as being "connected" or "attached" to another element, it may be directly connected or coupled to the other element, or intermediate elements may be present. Conversely, when an element is referred to as being "directly connected" or "directly coupled" to another element, no intermediate elements are present. Furthermore, the term "coupled" generally means physical, mechanical, magnetic, and / or electrical coupling or connection, and in the absence of specific contrasting language, the presence of intermediate elements between coupled or associated items is not excluded.

[0031] Relative terms such as “below,” “above,” “upper,” “lower,” “horizontal,” or “vertical” may be used herein to describe the relationship between one element, layer, or region and another element, layer, or region illustrated in the figures. It will be understood that these terms are intended to cover different device orientations other than those depicted in the figures. In this application, “vertical,” “horizontal,” and “parallel” are defined as including cases within ±10% of the standard definition. For example, vertical typically refers to an angle of 90° relative to a reference line, but in this application, vertical refers to cases including those within 80° to 100°. Unless otherwise expressly stated, comparative quantitative terms (such as “above” and “below”) are intended to cover the concept of equality. As an example, “above” can mean not only “greater than” in a mathematical sense but also “equal to.”

[0032] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the application. When used herein, the singular forms “a,” “an,” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will also be understood that, when used herein, the terms “comprising,” “including,” “containing,” and / or “comprising” designate the presence of the stated features, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or combinations thereof.

[0033] To clearly illustrate the positional relationships between the devices, components, structures, or mechanisms in the various embodiments of this application, the "relative sides" defined in the embodiments disclosed in this application refer to two devices, components, structures, or mechanisms located on opposite sides of a certain reference, such as being arranged in a mirror, axially symmetrical, or centrally symmetrical manner on opposite sides of the reference. Examples of the reference include an axis of symmetry, a center line, a dividing surface, or a reference plane.

[0034] In view of the technical problems mentioned in the background art, this application discloses a crystal growth apparatus and its crucible mechanism. By setting a crucible heating device including a first heating component and a second heating component in the crucible mechanism, the bottom and sidewalls of the crucible can be heated respectively. By configuring the first heating part as a plate-shaped main body composed of at least two parallel strip-shaped heating elements continuously bent and assembled on a plane, and lugs located on opposite sides of the main body, and configuring the second heating part as an annular structure surrounding the sidewalls of the crucible, the separate design of the bottom and sidewalls of the crucible is avoided, the generation of temperature gradients is reduced, and the crucible is heated more uniformly. By setting a liftable first heating lifting mechanism connected to a first pair of electrodes in the first heating component, the first heating part can maintain a preset distance from the bottom of the crucible, thereby ensuring the thermal field balance inside the crucible during crystal growth.

[0035] The crystal growth equipment provided in some embodiments of this application can be used to arrange atoms or molecules in raw materials in an orderly manner to form a specific crystal structure according to different growth techniques, thereby artificially synthesizing crystal materials with specific properties. For example, the Czochralski method can be used to synthesize silicon rods, sapphire, and other single-crystal materials from solid silicon materials; the zone melting method can be used to synthesize silicon wafers and other high-purity semiconductor materials from silicon materials; and the chemical vapor deposition method can be used to synthesize diamond films from gaseous raw materials such as methane. In the example of synthesizing silicon rods using the Czochralski method, the crystal growth equipment can be configured as a single-crystal furnace. Specifically, after heating the solid silicon material to a molten state to form liquid silicon material, a seed crystal is immersed in the liquid silicon material and rotated and pulled at a certain speed, causing the liquid silicon material to solidify directionally on the seed crystal, gradually growing a cylindrical single-crystal silicon rod. The following description of various embodiments using the configuration of the crystal growth equipment as a single-crystal furnace should not be construed as a limitation of this application.

[0036] In one embodiment, the crystal growth apparatus includes a furnace body, a crystal stretching assembly, and an atmosphere control device. Please refer to [link / reference]. Figure 1 and Figure 2 ,in, Figure 1 The diagram shown is a schematic representation of the external structure of the furnace body in one embodiment of this application. Figure 2 The diagram shown is a schematic representation of the internal structure of the furnace body in one embodiment of this application. Please refer to... Figure 1 and Figure 2The furnace body 1 is equipped with a crucible mechanism 11, and the crystal stretching assembly (not shown) is positioned above the furnace body 1 for stretching and growing single-crystal silicon rods. The atmosphere control device is used to supply gas into the furnace body 1 and to draw gas from the furnace body 1 to control the atmosphere inside the furnace body 1.

[0037] In one embodiment, the crystal stretching assembly may be configured to include a seed crystal clamping mechanism for fixing the seed crystal, a lifting mechanism for stretching the silicon rod from liquid silicon material, and a rotating mechanism for rotating the seed crystal. In one example, as mentioned above, the speed at which the lifting mechanism lifts the silicon rod is related to the moving speed of the crucible 111. It should be noted that the vertical moving speed of the lifting mechanism and the rotation speed at which the rotating mechanism drives the silicon rod to rotate can be determined according to the required silicon rod size parameters. For example, if the required silicon rod diameter is large, the lifting speed of the lifting mechanism can be set relatively slowly, but this is not a limitation; it can be determined according to actual production needs.

[0038] It should be understood that oxygen, water vapor, or other impurities in the atmosphere within furnace 1 may affect the performance of the grown silicon rod. For example, the presence of oxygen may cause the oxygen content in the silicon rod to exceed the standard, thereby affecting the conductivity and mechanical properties of the silicon rod. Therefore, it is necessary to use the atmosphere control device to regulate the gas environment within furnace 1 to ensure that the atmospheric conditions during the silicon rod growth process meet the purity required by the production process and avoid silicon rod quality defects.

[0039] In one embodiment, the atmosphere control device may be configured to include a gas supply mechanism for supplying an inert gas, such as argon or nitrogen, into the furnace body 1, and a suction mechanism for extracting excess or contaminated gas from the furnace body 1 to maintain a pure atmosphere within the furnace body 1. In this embodiment, the gas supply rate of the gas supply mechanism and the gas extraction rate of the suction mechanism are matched to ensure that the atmosphere circulating within the furnace body 1 remains pure, while simultaneously maintaining a dynamic pressure balance within the furnace body 1. In one example, the suction mechanism may be configured to include two suction lines.

[0040] In one embodiment, the furnace body 1 is used to provide a high-temperature environment for melting solid silicon material to form liquid silicon material and to maintain the temperature field required for silicon rod growth. In one example, such as Figure 1 and Figure 2As shown, the furnace body 1 is configured as a cylindrical structure, with an internal groove for accommodating the crucible mechanism 11. Of course, in some other examples, it may be configured in other shapes to accommodate the growth of polycrystalline silicon. In some examples, the inner wall of the furnace body 1 is provided with an insulation layer, such as graphite felt and ceramic fiber, to ensure a high-temperature environment within the furnace. In some examples, the furnace body 1 may be made of materials possessing properties such as high temperature resistance, oxidation resistance, and high mechanical strength, such as stainless steel, alloys, quartz, and refractory ceramics.

[0041] In one embodiment, such as Figure 2 As shown, the crucible mechanism 11 includes a crucible 111, a crucible lifting device 112, and a crucible heating device 113. The following description, in conjunction with... Figure 2 The specific structure of the crucible mechanism 11 is described in detail.

[0042] In one embodiment, the crucible 111 includes a receiving space for holding silicon material, formed by sidewalls and a bottom. In some examples, such as Figure 2 As shown, crucible 111 is formed by a circular bottom and a sidewall adapted to the circular bottom, creating a cylindrical receiving space to hold solid silicon material as raw material, liquid silicon material heated to a molten state, and seed crystals immersed in the liquid silicon material for growing silicon rods. In some examples, crucible 111 may be configured as a material with high temperature resistance and high thermal conductivity, such as quartz, graphite, or composite ceramics. In some examples, the sidewalls and bottom of crucible 111 may be coated with heat-resistant materials such as alumina or silicon carbide to improve the heat resistance of crucible 111.

[0043] In one embodiment, a crucible lifting device 112 is disposed at the bottom of the crucible 111, including a crucible lifting shaft 1121 connected to the bottom of the crucible 111, and a crucible lifting drive unit (not shown) that drives the crucible lifting shaft 1121 to perform lifting and lowering movements. In this embodiment, the crucible lifting device 112 is used to move the crucible 111 vertically in accordance with the lifting of the silicon rod by the crystal stretching assembly. In one example, the moving speed of the crucible 111 is related to the lifting speed of the silicon rod to compensate for the drop in liquid level height after the liquid silicon material in the crucible 111 is consumed during the lifting of the silicon rod.

[0044] In one embodiment, such as Figure 2 As shown, the crucible lifting shaft 1121 is located at the center of the circular bottom of the crucible 111 to ensure uniform force distribution on the crucible 111. The crucible lifting drive unit may, for example, be disposed at the bottom of the crucible lifting shaft 1121 and associated with the crucible lifting shaft 1121 to realize the lifting movement of the crucible 111.

[0045] In some examples, the crucible lifting shaft 1121 may be configured as a telescopic rod, and the crucible lifting drive unit may be configured as a lifting motor. For example, the lifting motor drives the telescopic rod to extend, thereby realizing the upward movement of the crucible lifting shaft 1121; the lifting motor drives the telescopic rod to retract, thereby realizing the downward movement of the crucible lifting shaft 1121.

[0046] In some other examples, the crucible lifting shaft 1121 may be configured as a threaded rod, and the crucible lifting drive unit may be configured as a rotary motor. For example, the rotary motor driving the threaded rod to rotate forward can realize the upward movement of the crucible lifting shaft 1121, and the rotary motor driving the threaded rod to rotate in reverse can realize the downward movement of the crucible lifting shaft 1121.

[0047] Of course, in some other embodiments, the crucible lifting device 112 may be configured in other forms, as long as it can drive the crucible 111 to move up and down.

[0048] In one embodiment, such as Figure 2 As shown, the crucible heating device 113 includes a first heating component 1131 and a second heating component 1132. In one example, the first heating component 1131 is used to heat the bottom of the crucible 111, and the second heating component 1132 is used to heat the sidewalls of the crucible 111. The two components work together to heat the crucible 111 and maintain the melting temperature of the silicon material in the crucible 111, for example, 1420°C.

[0049] Please see Figure 3 and combined Figure 2 ,in, Figure 3 The diagram shown is a structural schematic of the first heating component in one embodiment of this application. Figure 2 and Figure 3 As shown, the first heating assembly 1131 includes a first heating section 11311 and a first pair of electrodes 11312. The first heating section 11311 is disposed at the bottom of the crucible 111 to heat the bottom, and the first pair of electrodes 11312 are connected to opposite sides of the first heating section 11311.

[0050] Please see Figure 4 This application is displayed as such. Figure 3 The schematic diagram of the first heating part in the embodiment shown is as follows: Figure 4As shown, the first heating part 11311 includes a plate-shaped main body 113111 and lugs 113112 located on opposite sides of the main body 113111. To distinguish it from the main body 11321 included in the second heating part 11321 in subsequent embodiments, the main body included in the first heating part 11311 is referred to as the first main body 113111, and the main body included in the second heating part 11321 is referred to as the second main body 113211. The first main body 113111 and the second main body 113211 will not be described in detail thereafter.

[0051] exist Figure 4 In the embodiment shown, the first main body 113111 is formed by continuously bending and assembling at least two parallel strip heating elements on a plane, and there is a space S between the at least two parallel strip heating elements for the crucible lifting shaft 1121 to pass through.

[0052] In one example, such as Figure 4 As shown, the first main body 113111 is formed by continuously bending two parallel strip-shaped heating elements on a plane. The two continuously bent strip-shaped heating elements are arranged in a U-shape and are centrally symmetrically positioned directly below the crucible 111 to heat the bottom of the crucible 111. Furthermore, a space S is formed between the two U-shaped strip-shaped heating elements to allow the crucible lifting shaft 1121 to pass through, thereby avoiding interference with the first heating part 11311. In some other examples, the first main body 113111 may be formed by continuously bending more than two strip-shaped heating elements to ensure sufficient heating area. The strip-shaped heating elements may, for example, be configured as heating resistance wires or silicon carbide heating tubes.

[0053] In some other embodiments, the first main body 113111 may be configured to include a plate-shaped heating element, which may specifically be an integral structure with a hollowed-out central portion, forming a space for the crucible lifting shaft 1121 to move freely up and down. In some examples, the plate-shaped heating element may be configured to include a metal substrate made of materials such as nickel-chromium alloy or a ceramic substrate made of materials such as boron nitride or aluminum oxide.

[0054] In one embodiment, the lug 113112 extends along the plane of the first main body 113111 and from opposite sides. In some examples, the lug 113112 and the opposite sides of the first main body 113111 may be integrally formed or fixedly connected, and the fixed connection method includes, but is not limited to, welding, bonding and tenon joint connection.

[0055] In one embodiment, please refer to Figure 3 and Figure 4The lug 113112 has a mounting portion 113113 for connecting the first heating element 11311 to the first pair of electrodes 11312. In one example, the mounting portion 113113 may be configured as a mounting hole for a mounting member to pass through to fix the first heating element 11311 to the first pair of electrodes 11312. Furthermore, the mounting member can be detached from the mounting portion 113113 to separate the first heating element 11311 from the first pair of electrodes 11312. In some implementations, the mounting member may be configured as a screw, and the mounting portion 113113 may be configured as a screw hole adapted to the mounting member.

[0056] In some other embodiments, the lug and the first main body may not be distinguished. That is, the first heating part 11311 may only include the first main body 113111, and the mounting part 113113 may be directly disposed on the first main body 113111 to achieve connection with the first pair of electrodes 11312.

[0057] In one embodiment, the first pair of electrodes 11312 may be configured to include a positive electrode and a negative electrode. The positive electrode and the negative electrode may be connected to a power source, for example, via a wire, to form a closed loop connecting the positive electrode, the first heating element 11311, and the negative electrode, thereby enabling the first heating element 11311 to heat the bottom of the crucible 111. In one example, the first pair of electrodes 11312 are respectively configured as columnar electrodes to facilitate connection with the first heating element 11311 via a mounting part 113113. In some examples, the first pair of electrodes 11312 may be configured, for example, as conductive materials with heat resistance and corrosion resistance, such as molybdenum, copper, titanium, or graphite. In some examples, the first pair of electrodes 11312 may be respectively disposed inside an insulating cylinder to facilitate mounting on the furnace bottom plate 12 described in subsequent embodiments via the insulating cylinder.

[0058] It should be noted that, as Figure 1 and Figure 2 As shown, the crucible lifting shaft 1121 is located at the center of the circular bottom of the crucible 111 and passes through the space S in the center of the first heating part 11311, while the first pair of electrodes 11312 are located on opposite sides of the first heating part 11311. Therefore, the axis of the crucible lifting shaft 1121 and the axis of the two electrodes in the first pair of electrodes 11312 are located on the same plane.

[0059] As mentioned earlier, the crucible 111 needs to move vertically in accordance with the lifting of the silicon rod by the crystal stretching assembly to compensate for the drop in liquid level after the liquid silicon material is consumed during the lifting process. During this process, if the first heating part 11311 is fixed, the distance between it and the bottom of the crucible 111 will increase, making it difficult to guarantee the heating effect. Therefore, in one embodiment, as... Figure 3As shown, the first heating assembly 1131 further includes a first heating lifting mechanism 11313, which is connected to the first pair of electrodes 11312 to maintain a preset distance between the first heating part 11311 and the bottom of the crucible 111 through lifting movement. The preset distance refers to a fixed value or range of distance in the vertical direction between the first heating part 11311 and the bottom of the crucible 111, which is predetermined or desired to be maintained.

[0060] In one example, the preset distance is a fixed value. When the actual distance between the first heating element 11311 and the bottom of the crucible 111 is greater than the fixed value, the first heating lifting mechanism 11313 raises the first pair of electrodes 11312. When the actual distance is less than the fixed value, the first heating lifting mechanism 11313 lowers the first pair of electrodes 11312 so that the distance between them returns to the fixed value. In another example, the preset distance is a range, including an upper limit and a lower limit. When the actual distance between the first heating element 11311 and the bottom of the crucible 111 exceeds the upper limit, the first heating lifting mechanism 11313 raises the first pair of electrodes 11312. When the actual distance is lower than the lower limit, the first heating lifting mechanism 11313 lowers the first pair of electrodes 11312 so that the distance between them returns to the range. When the actual distance is exactly between the lower limit and the upper limit, the first pair of electrodes 11312 does not move.

[0061] Please see Figure 5 and combined Figure 3 ,in, Figure 5 The diagram shown is a structural schematic of the first heating lifting mechanism in one embodiment of this application, as follows: Figure 3 and Figure 5 As shown, the first heating lifting mechanism 11313 includes a heating lifting part 113131 and a heating lifting drive part 113132. The heating lifting part 113131 is connected to the first pair of electrodes 11312, and the heating lifting drive part 113132 is used to drive the heating lifting part 113131 to perform lifting movements.

[0062] In one embodiment, such as Figure 5As shown, the heating lifting unit 113131 includes a base 113133, a lifting screw 113134 is disposed within the base 113133, and a sliding member 113135 connected to the first pair of electrodes 11312 is disposed on the lifting screw 113134; the heating lifting drive unit 113132 is configured to include a lifting motor for driving the sliding member 113135 to slide on the lifting screw 113134. In this embodiment, the lifting screw 113134, the sliding member 113135, and the lifting motor can all be disposed on the base 113133. Here, the specific form of the base 113133 can be a beam, column, plate frame, or bracket, etc.

[0063] In one implementation, such as Figure 5 As shown, a lifting guide rail 113136 is also provided vertically inside the base 113133. A sliding member 113135 is mounted on the lifting screw 113134 and adapted to the lifting guide rail 113136. The lifting motor can drive the lifting screw 113134 to rotate, thereby enabling the sliding member 113135 to slide on the lifting screw 113134 and the lifting guide rail 113136, thus driving the first pair of electrodes 11312 connected to the sliding member 113135 to move up and down. In some examples, two parallel lifting guide rails can be provided inside the base 113133 to achieve stable lifting and lowering of the first pair of electrodes 11312.

[0064] In one embodiment, the heating lifting drive unit 113132 further includes a reducer associated with the lifting motor. Specifically, the input shaft of the reducer can be connected to the output shaft of the lifting motor via a synchronous belt, and its output shaft is connected to the lifting screw 113134. In other words, the power generated by the lifting motor is transmitted from the output shaft of the lifting motor to the input shaft of the reducer via the synchronous belt. At this time, the power can be transmitted from the input shaft of the reducer to the lifting screw 113134 via the output shaft of the reducer, thereby enabling control of the rotational speed of the lifting screw 113134, and thus controlling the lifting speed of the first pair of electrodes 11312.

[0065] In some other implementations, the lifting screw 113134 can be replaced with a telescopic rod. In this case, the lifting motor can drive the telescopic rod to extend and retract, thereby realizing the lifting and lowering movement of the first pair of electrodes 11312. It should be noted that the implementation of the first heating lifting mechanism 11313 is not limited to this. Other components that can realize the lifting and lowering movement of the heating lifting part 113131 are still applicable. For example, the first heating lifting mechanism 11313 can also be configured to include a lifting rack, a drive gear meshing with the lifting rack, and a drive motor that drives the drive gear to rotate.

[0066] In one embodiment, such as Figure 3As shown, two first heating lifting mechanisms 11313 are configured to connect to the two electrodes of the first pair of electrodes 11312, respectively. In this example, the first heating lifting mechanisms 11313 connected to each electrode are independent of each other, so as to control the lifting of the two electrodes separately. At this time, the two first heating lifting mechanisms 11313 can lift synchronously to ensure that the two electrodes drive the first heating part 11311 to lift stably. In some other examples, one of the two first heating lifting mechanisms 11313 can serve as a backup lifting mechanism. When the other first heating lifting mechanism 11313 malfunctions, the backup lifting mechanism can take over in time to avoid operation interruption.

[0067] In another embodiment, the number of first heating lifting mechanisms 11313 is configured to be one, to connect to any one of the first pair of electrodes 11312. In this embodiment, the first heating lifting mechanism 11313 drives one of the electrodes connected to it to perform an active lifting movement, and the other electrode rises and falls accordingly.

[0068] Please see Figure 6 and combined Figure 2 ,in, Figure 6 The diagram shown is a structural schematic of the second heating component in one embodiment of this application, as follows: Figure 2 and Figure 6 As shown, the second heating assembly 1132 includes a second heating section 11321 and a second pair of electrodes 11322. The second heating section 11321 is annular and arranged around the sidewall of the crucible 111 to heat the sidewall, and the second pair of electrodes 11322 are connected to opposite sides of the second heating section 11321.

[0069] In one embodiment, such as Figure 6 As shown, the second heating part 11321 includes a second main body 113211 and a connecting part 113212. In this embodiment, the second main body 113211 is formed by continuously bending a strip-shaped heating element in the vertical direction and connecting the ends together. The connecting part 113212 is located on opposite sides of the second main body 113211 and is used to connect the second heating part 11321 to the second pair of electrodes 11322. The second pair of electrodes 11322 may have the same configuration as the aforementioned first pair of electrodes 11312, as described in the previous embodiments, and will not be repeated here. In one example, a certain distance is reserved between the second main body 113211 and the side wall of the crucible 111 to avoid excessively high local temperatures in the crucible 111, and to prevent deformation or cracking of the crucible 111 due to thermal expansion.

[0070] In another embodiment, the second main body 113211 may be formed by continuously bending and assembling multiple parallel strip-shaped heating elements. For example, strip-shaped heating elements connected end-to-end and continuously bent in the vertical direction can be respectively arranged at different heights of the crucible 111 to form multiple ring-shaped heating on the side wall of the crucible 111, thereby making the side wall of the crucible 111 more uniformly heated and facilitating the formation of a constant temperature field. In this embodiment, each strip-shaped heating element can be connected to a pair of electrodes to achieve independent heating of each heating layer, thereby improving the temperature control accuracy. In some examples, the strip-shaped heating element may be configured as a heating resistance wire or a silicon carbide heating tube, etc. Of course, in other embodiments, the second main body 113211 may be configured in other forms, such as including a grid-shaped heating element or a spiral-shaped heating element, etc., and this application does not limit this.

[0071] In one embodiment, the two connecting portions 113212 disposed on opposite sides of the second main body 113211 can be configured as conductive rods. The upper end of the conductive rod is fixedly connected to the second main body 113211, and the lower end is fixedly connected to the second pair of electrodes 11322. In this embodiment, the connecting portion 113212 serves as a bridge between the second main body 113211 and the second pair of electrodes 11322, providing structural support and current transmission. That is, on the one hand, the connecting portion 113212 needs to support the weight of the second main body 113211. On the other hand, the connecting portion 113212, due to its conductivity, allows current to pass through, thereby forming a closed loop connecting the second main body 113211, the connecting portion 113212, and the second pair of electrodes 11322, thereby realizing the heating of the side wall of the crucible 111 by the second heating portion 11321.

[0072] exist Figure 6 In the example shown, the connecting part 113212 is configured as an "L"-shaped conductive rod, including a long side and a short side. The long side is fixedly connected to the second main body 113211, and the short side is fixedly connected to the second pair of electrodes 11322 by screws. This arrangement makes the positions of the first pair of electrodes 11312 and the second pair of electrodes 11322 more concentrated within the furnace body 1, making the equipment more compact. In some examples, the connecting part 113212 may be made of conductive and high-temperature resistant materials such as molybdenum or tungsten.

[0073] Of course, in some other embodiments, the second main body and the connecting part may not be distinguished, that is, the opposite sides of the second heating part 11321 may be directly connected to the second pair of electrodes 11322.

[0074] It should be noted that, as Figure 1 and Figure 2As shown, the crucible lifting shaft 1121 is located at the center of the circular bottom of the crucible 111, while the second pair of electrodes 11322 are located on opposite sides of the second heating section 11321. Therefore, the axis of the crucible lifting shaft 1121 and the axis of the two electrodes in the second pair of electrodes 11322 are on the same plane. As mentioned earlier, the axis of the crucible lifting shaft 1121 and the axis of the two electrodes in the first pair of electrodes 11312 are on the same plane. For ease of distinction, the plane containing the first pair of electrodes 11312 is referred to as the first plane, and the plane containing the second pair of electrodes 11322 is referred to as the second plane. In this example, the first plane and the second plane intersect at the axis of the crucible lifting shaft 1121.

[0075] In one embodiment, such as Figure 2 As shown, the projected outline of the first heating component 1131 in the vertical direction is smaller than the projected outline of the second heating component 1132 in the vertical direction. The projected outline refers to the outer boundary of the projection of the first heating component 1131 or the second heating component 1132 in the vertical direction. It should be understood that the first heating component 1131, which achieves bottom heating, requires less space than the second heating component 1132, which achieves sidewall heating. Furthermore, to avoid interference between the two, the first heating component 1131 can be disposed within the projected outline of the second heating component 1132 or offset from it.

[0076] It should be understood that if the position of the second heating part 11321 is fixed during the lifting and lowering of the crucible 111, the installation height of the second heating part relative to the crucible 111 will increase. For example, it may be necessary to cover the entire side wall of the crucible 111. This will increase the use of consumables and increase the heating area, thereby increasing energy consumption, which is not conducive to saving production costs.

[0077] In view of this, in one embodiment, the second heating assembly 1132 further includes a second heating lifting mechanism (not shown). The second heating lifting mechanism is connected to the second pair of electrodes 11322 to maintain the second heating part 11321 at a preset height position of the crucible 111 through lifting movement. The preset height position refers to the area where the second heating part 11321 is disposed vertically around the side wall of the crucible 111. For example, the preset height position is within one-third of the middle of the height of the crucible side wall; in other words, at this time, the height of the second main body 113211 in the second heating part is one-third of the height of the crucible 111, and its placement position is located in the middle of the crucible 111. It should be noted that this shortens the placement area of ​​the second main body 113211, thereby reducing material consumption, and simultaneously shortening the heating area to reduce electrical consumption, saving production costs.

[0078] In this example, the crucible 111 can be divided into three equal parts along its height, referred to as the upper part, middle part, and lower part, respectively. When the second heating part 11321 is located at the lower part of the side wall of the crucible 111, the second heating lifting mechanism drives the second pair of electrodes 11322 to rise. When the second heating part 11321 is located at the upper part of the side wall of the crucible 111, the second heating lifting mechanism drives the second pair of electrodes 11322 to fall so that the second heating part 11321 is always located at the middle part of the side wall of the crucible 111 and maintains its preset height position.

[0079] In one embodiment, the second heating lifting mechanism may have the same configuration as the first heating lifting mechanism 11313. That is, the second heating lifting mechanism may also be configured to include a heating lifting part and a heating lifting drive part. The heating lifting part is connected to the second pair of electrodes 11322, and the heating lifting drive part is used to drive the heating lifting part to perform lifting movements. In one implementation, the heating lifting part of the second heating lifting mechanism may also be configured to include a base, in which a lifting screw is provided, and a sliding member connected to the second pair of electrodes 11322 is provided on the lifting screw. The heating lifting drive part of the second heating lifting mechanism is configured to include a lifting motor for driving the sliding member to slide on the lifting screw. For details, please refer to the description of the specific structure of the first heating lifting mechanism 11313 in the foregoing embodiments.

[0080] In one embodiment, the number of second heating lifting mechanisms is one, to connect to any one of the electrodes in the second pair of electrodes 11322. In another embodiment, the number of second heating lifting mechanisms is two, to connect to the two electrodes in the second pair of electrodes 11322 respectively. For details, please refer to the description of the specific configuration and number of the first heating lifting mechanisms 11313 in the foregoing embodiments; these details will not be repeated here.

[0081] It should be noted here that, Figures 1 to 3 The configuration of the two first heating lifting mechanisms 11313 is shown only as an example. Whether the second heating lifting mechanism is configured on the second pair of electrodes 11322, and the number and specific form of the first heating lifting mechanism 11313 and the second heating lifting mechanism can be flexibly designed according to actual process requirements. The embodiments not shown in the figures should not be regarded as a limitation on the technical solution of this application.

[0082] In one embodiment, the crucible mechanism 11 further includes a temperature monitoring device and a control device. The temperature monitoring device is disposed around the crucible 111 to acquire temperature data of the crucible 111. The control device is connected to the temperature monitoring device to control the moving distance and moving speed of the first heating lifting mechanism 11313 or the second heating lifting mechanism based on the temperature data. In one implementation, the temperature monitoring device may be disposed at the bottom and sidewall of the crucible 111 respectively to acquire temperature data of the bottom and sidewall of the crucible 111 in real time. The control device controls the moving distance and moving speed of the first heating lifting mechanism 11313 based on the temperature data of the bottom of the crucible so that the first heating part 11311 maintains a preset distance from the bottom of the crucible 111. At the same time, the control device controls the moving distance and moving speed of the second heating lifting mechanism based on the temperature data of the sidewall of the crucible so that the second heating part 11321 is maintained at a preset height position on the sidewall of the crucible 111.

[0083] In one embodiment, the temperature monitoring device may be configured as an infrared temperature sensor to acquire temperature data of the bottom and sidewalls of the crucible 111, respectively. In some examples, the control device may preprocess the temperature data, such as by removing noise interference, using a moving average filtering algorithm, and calculate the optimal lifting positions and speeds of the first pair of electrodes 11312 and the second pair of electrodes 11322 in conjunction with crystal growth rate monitoring data. Subsequently, the control device converts the calculated optimal lifting positions and speeds into movement commands to control the moving distance and speed of the first heating lifting mechanism 11313 and the second heating lifting mechanism. For example, the control device may determine the pulse equivalent of the lifting motor and the corresponding linear displacement of the lifting screw based on the movement commands and in conjunction with the model and performance parameters of the lifting motor, thereby controlling the first pair of electrodes 11312 and the second pair of electrodes 11322 to perform lifting movements respectively.

[0084] In this embodiment, the control device is disposed in the crucible mechanism 11. In other embodiments, it may also be disposed in a computer device connected to the crucible mechanism 11.

[0085] In one embodiment, the control device includes a processing unit, a storage unit, and multiple interface units. Each interface unit is connected to a separately packaged device, component, or mechanism within the crucible mechanism 11, such as a temperature monitoring device, a first heating and lifting mechanism 11313, and a second heating and lifting mechanism, and transmits data via an interface. The control device also includes at least one of the following: a prompting device, a human-machine interface device, etc. The interface unit determines its interface type according to the connected device, component, or mechanism, including but not limited to: a universal serial interface, a video interface, an industrial control interface, a wireless communication port, etc. The storage unit stores the lifting program, and the processing unit is connected to the storage unit. When executing the lifting program, the processing unit controls the various components or structures in the crucible mechanism 11 to coordinate the lifting of the first pair of electrodes 11312 and the second pair of electrodes 11322.

[0086] In one embodiment, such as Figure 1 As shown, the furnace body 1 has a furnace bottom plate 12. In this example, the furnace bottom plate 12 is configured as a circle and forms the bottom of the furnace body 1, which, together with one side wall, forms a cylindrical structure. Of course, in some other examples, it can also be configured as a rectangle or polygon to form other shapes of furnace bodies. In some examples, the furnace bottom plate 12 has an insulation layer, such as graphite felt and ceramic fiber, disposed within its interlayer to ensure a high-temperature environment within the furnace body.

[0087] Please see Figure 7 and Figure 8 and combined Figure 1 ,in, Figure 7 The diagram shown is a structural schematic of the furnace chassis in one embodiment of this application. Figure 8 This is a schematic diagram showing the crucible mechanism disposed on the furnace bottom plate in one embodiment of this application. Figure 1 , Figure 7 and Figure 8 As shown, the furnace base 12 has multiple holes 121 through which the first pair of electrodes 11312, the second pair of electrodes 11322, and the crucible lifting shaft 1121 pass. In some examples, the number of holes 121 can be configured to be five, to respectively accommodate the first pair of electrodes 11312, the second pair of electrodes 11322, and the crucible lifting shaft 1121. In some examples, the number of holes 121 can be configured to be seven, in addition to accommodating the first pair of electrodes 11312, the second pair of electrodes 11322, and the crucible lifting shaft 1121, also accommodating the two suction lines of the atmosphere control device in the aforementioned embodiments. In other examples, such as Figure 7As shown, the number of holes 121 can be configured to be nine. Besides the first pair of electrodes 11312, the second pair of electrodes 11322, the crucible lifting shaft 1121, and two suction pipes, two spare holes may also be included to allow for temporary deferral of components as needed. For example, these holes can provide a mounting position for a new electrode should a fault occur at other holes, thus avoiding operational interruptions. It should be noted that the number of holes 121 can be arbitrary, and this application does not impose any limitations on this.

[0088] In one embodiment, a mounting element may be provided at the hole 121 so that the first pair of electrodes 11312, the second pair of electrodes 11322, and the crucible lifting shaft 1121 pass through the corresponding hole and are mounted on the furnace bottom plate 12. In some examples, the mounting element may be configured as a flange or bearing seat, etc.

[0089] In one embodiment, the holes through which the crucible lifting shaft 1121 passes are located at the center of the furnace bottom plate 12. Two holes 121 for the first pair of electrodes 11312 and two holes 121 for the second pair of electrodes 11322 are collinear with the central hole. As mentioned earlier, the axis of the crucible lifting shaft 1121 lies on a first plane with the axis of the two electrodes in the first pair of electrodes 11312, and on a second plane with the axis of the two electrodes in the second pair of electrodes 11322. The first and second planes intersect at the axis of the crucible lifting shaft 1121. Therefore, when both passes through the holes on the furnace bottom plate 12, the holes containing the corresponding electrode pairs are collinear with the central hole. Specifically, as... Figure 7 As shown, the two holes 121 through which the first pair of electrodes 11312 passes and the hole 121 through which the crucible lifting shaft 1121 passes are located on a straight line L1. The two holes 121 through which the second pair of electrodes 11322 passes and the hole 121 through which the crucible lifting shaft 1121 passes are located on a straight line L2. The straight lines L1 and L2 intersect at the circular part of the furnace bottom plate 12.

[0090] In one embodiment, a cooling device (not shown) may be configured on the furnace base 12. This cooling device can cool the first pair of electrodes 11312, the second pair of electrodes 11322, and the crucible lifting shaft 1121 at corresponding hole positions. In one example, the cooling device may be configured as a liquid cooling device, utilizing a cooling medium to exchange heat with the components at the corresponding hole positions to achieve a cooling effect. In this example, the crystal growth equipment may further include a fluid supply device to connect to the cooling device and supply the cooling medium. In one example, the cooling medium may be configured as water or an ethylene glycol solution, etc.

[0091] In summary, the crystal growth equipment and crucible mechanism disclosed in this application, by configuring the first heating section as a plate-shaped main body composed of at least two parallel strip-shaped heating elements continuously bent and assembled on a plane, and lugs located on opposite sides of the main body, and configuring the second heating section as an annular structure surrounding the crucible sidewall, avoids the separate design of the crucible bottom and sidewall, reduces the generation of temperature gradients, and makes the crucible more uniformly heated. By providing a liftable first heating lifting mechanism connected to the first pair of electrodes in the first heating assembly, the first heating section can maintain a preset distance from the bottom of the crucible, thereby ensuring a balanced thermal field within the crucible during crystal growth. By providing a liftable second heating lifting mechanism connected to the second pair of electrodes in the second heating assembly, the annular second heating section surrounding the crucible sidewall can be maintained at a preset height position in the crucible, thereby reducing material consumption, shortening the heating area to reduce electrical consumption, and saving production costs.

[0092] The above embodiments are merely illustrative of the inventive essence and beneficial effects of this application, and are not intended to limit this application. Any person skilled in the art can modify or alter the above embodiments without departing from the principles and scope of this application. Therefore, all equivalent modifications or alterations achieved by those skilled in the art without departing from the spirit and technical concept disclosed in this application should still be covered by the claims of this application.

Claims

1. A crucible mechanism, characterized in that, include: A crucible, comprising a containment space for holding silicon material, formed by side walls and a bottom; A crucible lifting device is disposed at the bottom of the crucible, including a crucible lifting shaft connected to the bottom and a crucible lifting drive unit for driving the crucible lifting shaft to perform lifting and lowering movements; The crucible heating device includes: The first heating assembly includes a first heating part disposed at the bottom of the crucible to heat the bottom, a first pair of electrodes connected to opposite sides of the first heating part, and a first heating lifting mechanism connected to the first pair of electrodes to maintain a preset distance between the first heating part and the bottom of the crucible through lifting movement; wherein, the first heating part includes a plate-shaped main body formed by continuously bending and splicing at least two parallel strip heating elements on a plane, and lugs located on opposite sides of the main body, there is a space between the at least two parallel strip heating elements for the crucible lifting shaft to pass through, and mounting portions for connecting the first heating part to the first pair of electrodes are formed on the lugs; The second heating assembly includes an annular second heating section disposed around the sidewall to heat the sidewall, and a second pair of electrodes connected to opposite sides of the second heating section.

2. The crucible mechanism according to claim 1, characterized in that, The centerline of the crucible lifting shaft is located on a first plane with the centerlines of the two electrodes in the first pair of electrodes, and on a second plane with the centerlines of the two electrodes in the second pair of electrodes.

3. The crucible mechanism according to claim 1, characterized in that, The second heating assembly further includes a second heating lifting mechanism connected to the second pair of electrodes to maintain the second heating part at a preset height position in the crucible through lifting and lowering motion.

4. The crucible mechanism according to claim 1, characterized in that, The second heating part includes a main body formed by continuously bending a strip-shaped heating element in the vertical direction and connecting the ends together, and connecting parts located on opposite sides of the main body. The connecting parts are used to connect the second heating part to the second pair of electrodes.

5. The crucible mechanism according to claim 3, characterized in that, The first heating lifting mechanism or the second heating lifting mechanism includes a heating lifting part connected to a corresponding electrode pair, and a heating lifting drive part for driving the heating lifting part to perform lifting movements.

6. The crucible mechanism according to claim 5, characterized in that, The heating lifting unit includes a base, a lifting screw is provided in the base, and a sliding member connected to a corresponding electrode pair is provided on the lifting screw; the heating lifting drive unit is configured to include a lifting motor for driving the sliding member to slide on the lifting screw.

7. The crucible mechanism according to claim 3, characterized in that, The number of the first heating lifting mechanism or the second heating lifting mechanism is configured to be one to connect to any one of the electrodes in the corresponding electrode pair.

8. The crucible mechanism according to claim 3, characterized in that, The number of the first heating lifting mechanism or the second heating lifting mechanism is configured to be two, so as to connect to two electrodes in the corresponding electrode pair respectively.

9. The crucible mechanism according to claim 1 or 3, characterized in that, It also includes a temperature monitoring device disposed around the crucible to obtain temperature data of the crucible, and a control device connected to the temperature monitoring device to control the moving distance and moving speed of the first heating lifting mechanism or the second heating lifting mechanism based on the temperature data.

10. A crystal growth apparatus, characterized in that, include: The furnace body is equipped with a crucible mechanism as described in any one of claims 1 to 9; A crystal stretching assembly, disposed above the furnace body, is used for stretching and growing single-crystal silicon rods; An atmosphere control device is used to supply gas into the furnace body and to draw gas from the furnace body to control the atmosphere inside the furnace body.

11. The crystal growth apparatus according to claim 10, characterized in that, The furnace body has a furnace base plate, which has multiple holes for the first pair of electrodes, the second pair of electrodes, and the crucible lifting shaft to pass through. The holes for the crucible lifting shaft to pass through are located at the center of the furnace base plate, and the two holes for the first pair of electrodes and the two holes for the second pair of electrodes to pass through are collinear with the center hole.

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