Heat dissipation structure and photoelectric sealing system
By designing a heat dissipation structure with interconnected heat exchange and heat conduction chambers, the problem of uneven heat dissipation in optoelectronic encapsulation technology was solved, achieving uniform chip temperature control and improving heat dissipation efficiency.
Patent Information
- Application Number
- CN202520329806.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-02-27
- Publication Date
- 2026-02-03
- Estimated Expiration
- 2035-02-27
AI Technical Summary
In existing optoelectronic encapsulation technology, the heat sink has poor heat dissipation performance and cannot provide the same level of heat dissipation for each optical engine, making it difficult to solve thermal management problems.
A heat dissipation structure was designed, including a heat exchanger and a heat conduction section. Through the communication between the heat exchange chamber and the heat conduction chamber, heat exchange is carried out using the working medium to reduce thermal resistance and ensure that the contact surface size of each chip is the same to achieve uniform heat dissipation.
This effectively reduces the internal thermal resistance of the heat dissipation structure, ensuring that the temperature of each chip is consistent and achieving the same level of heat dissipation for each chip.
Smart Images
Figure CN223872686U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the technical field of photoelectric sealing, in particular to a heat dissipation structure and a photoelectric sealing system. BACKGROUND
[0002] With the continuous increase of global data throughput, the demand for switching capacity of data centers is increasing. As an important module for transmitting data, optical modules have undergone technical development from 10G to 400G. Meanwhile, hot-pluggable optical modules have reached the limit after exceeding 400G, and co-packaged optics (CPO) is expected to replace the hot-pluggable form and become the next generation technology for data switching.
[0003] In related technologies, the co-packaged optics technology reduces the interconnection distance between the switching chip and the optical engine structure by integrating them onto the same substrate, to realize high-speed signal transmission and low system power consumption. However, in the CPO technology, the interconnection distance between the ASIC switching chip and the optical engine is continuously reduced or integrated onto the same substrate, which will inevitably cause thermal crosstalk problems, especially since the optical chip is highly sensitive to temperature. At the same time, due to the integration of numerous electrical chips, the overall power consumption of the co-packaged optics system can reach kilowatts, so the heat management problem needs to be solved.
[0004] In related technologies, a heat sink is used to dissipate heat from the ASIC switching chip and multiple optical engines to different degrees. However, the heat dissipation effect of the heat sink is poor, the internal thermal resistance of the heat sink is large, and the same degree of heat dissipation cannot be achieved for each optical engine. Practical new type content
[0005] Therefore, it is necessary to propose a heat dissipation structure and a photoelectric sealing system to solve the problem that the internal thermal resistance of the heat sink is large and the same degree of heat dissipation cannot be achieved for each optical engine.
[0006] A heat dissipation structure comprises:
[0007] a heat exchange member comprising a heat exchange portion for contacting one or more first chips and extending in a first direction, wherein the heat exchange portion is provided with a heat exchange cavity; and
[0008] one or more heat conduction portions provided on a side of the heat exchange portion away from the one or more first chips and extending in a second direction, wherein the one or more heat conduction portions are provided with a heat conduction cavity, and the heat conduction cavity is in communication with the heat exchange cavity; and
[0009] wherein the heat exchange member is provided with a working medium for heat exchange, and the first direction and the second direction are not parallel to each other.
[0010] In one of the embodiments, the second direction is parallel to the direction of gravity of the working medium.
[0011] In one of the embodiments, the heat-conducting cavity and the heat-exchanging cavity are configured as a vacuum chamber.
[0012] In one of the embodiments, the material of the heat-exchanging member includes any one of copper, aluminum, and stainless steel.
[0013] In one of the embodiments, the heat-dissipating structure includes a liquid-absorbing layer arranged in the heat-dissipating structure, the liquid-absorbing layer includes a first liquid-absorbing layer, the first liquid-absorbing layer is located in the heat-conducting cavity, and the first liquid-absorbing layer covers the cavity wall of the heat-conducting cavity.
[0014] The side of the first liquid-absorbing layer away from the cavity wall of the heat-conducting cavity encloses a heat-conducting channel.
[0015] In one of the embodiments, the first liquid-absorbing layer is provided with a capillary structure, the capillary structure is configured to transmit the working medium in contact with the side of the first liquid-absorbing layer away from the cavity wall of the heat-conducting cavity back to the heat-exchanging cavity.
[0016] In one of the embodiments, the liquid-absorbing layer includes a second liquid-absorbing layer, the second liquid-absorbing layer is located in the heat-exchanging cavity, and the second liquid-absorbing layer covers the cavity wall of the heat-exchanging cavity.
[0017] The side of the second liquid-absorbing layer away from the cavity wall of the heat-exchanging cavity encloses a heat-exchanging chamber, the working medium is located in the heat-exchanging chamber, and the heat-exchanging chamber is in communication with the heat-conducting channel.
[0018] In one of the embodiments, the plurality of heat-conducting parts are arranged at intervals along the first direction.
[0019] In one of the embodiments, the heat-dissipating structure includes one or more groups of first heat-dissipating members, and the first heat-dissipating members are arranged on the heat-conducting parts.
[0020] In one of the embodiments, the heat-exchanging part is provided with a contact area for contacting the first chip, and the center of the contact area is equal to the distance between the opposite sides of the heat-exchanging part along the first direction.
[0021] In one of the embodiments, the heat-exchanging member includes a plurality of heat-dissipating parts, at least one of the heat-dissipating parts is arranged on the heat-conducting part, the heat-dissipating part has a heat-dissipating cavity, and the heat-dissipating cavity is in communication with the heat-conducting cavity.
[0022] In one of the embodiments, the heat-dissipating structure includes one or more groups of second heat-dissipating members, and the second heat-dissipating members are used for contacting and dissipating heat from a second chip.
[0023] The heat dissipation structure in the embodiment, the side of the heat exchange part away from the heat conduction part is in contact with a plurality of first chips, the heat generated by each first chip is conducted to the heat exchange cavity in the heat exchange part through the contact surface between the first chip and the heat exchange part, the heat entering the heat exchange cavity is absorbed by the working medium in the heat exchange cavity, the temperature of the working medium absorbing the heat rises and vaporizes into hot steam, the hot steam leaves the heat exchange cavity and enters the heat conduction cavity, and moves in the heat conduction cavity along the extension direction of the heat exchange part, at the same time, the hot steam entering each heat conduction cavity conducts the heat of the hot steam to the air outside the heat conduction part through the cavity wall of the heat conduction cavity, and the hot steam loses heat and liquefies to become working medium again.
[0024] In the above process, since the heat exchange cavity and the heat conduction cavity are communicated, the heat generated by the first chip only exists in the process of passing through the first chip, entering the heat exchange cavity, heating the working medium to become hot steam, and passing through the heat conduction part to enter the air outside the heat conduction part, that is, the thermal resistance of the heat dissipation structure is small, and the first chip can be better cooled; in addition, since the contact surface between the side of the heat exchange part away from the heat conduction part and each first chip is the same size, enough working medium can be added in the heat exchange cavity, so that the heat generated by each first chip can be completely absorbed by the working medium in the heat exchange cavity after passing through the heat exchange part, and then the heat absorbed by the heat exchange part from each first chip is the same, ensuring that the cooling effect of the heat dissipation structure on each first chip is the same, and the temperature of each first chip is basically consistent.
[0025] In summary, the heat dissipation structure in the embodiment can reduce the thermal resistance inside the heat dissipation structure and cool each first chip cooled by the heat dissipation structure to the same extent through the above arrangement.
[0026] The application also provides an optoelectronic sealing system, which comprises the heat dissipation structure described in any one of the preceding embodiments and
[0027] a circuit board;
[0028] a substrate arranged on one side of the circuit board along the second direction and electrically connected with the circuit board;
[0029] a second chip arranged on the side of the substrate away from the circuit board and electrically connected with the substrate;
[0030] one or more first chips arranged on the side of the substrate away from the circuit board and electrically connected with the substrate, the first chip is arranged on the outer periphery of the second chip; the side of the heat exchange part away from the heat conduction part is in contact with the side of at least one first chip away from the substrate.
[0031] In the photoelectric sealing system of this embodiment, the side of the heat exchange section away from the heat conduction section is in contact with at least one first chip. When the side of the heat exchange section away from the heat conduction section is in contact with multiple first chips, the heat generated by each first chip is conducted to the heat exchange cavity inside the heat exchange section through the contact surface between itself and the heat exchange section. The heat entering the heat exchange cavity is absorbed by the working medium inside the heat exchange cavity. The temperature of the working medium that absorbs the heat rises and it vaporizes into hot steam. The hot steam leaves the heat exchange cavity and enters the heat conduction cavity, and moves in the heat conduction cavity along the extension direction of the heat conduction cavity. At the same time, the hot steam entering each heat conduction cavity conducts its own heat to the air outside the heat conduction section where the heat conduction cavity is located through the cavity wall of the heat conduction cavity. After the heat of the hot steam is dissipated, it liquefies and becomes the working medium again.
[0032] In the above process, since the heat exchange cavity and the heat conduction cavity are connected, the heat generated by the first chip only has thermal resistance when it passes through the first chip into the heat exchange cavity, heats the working medium into hot steam, and passes through the heat conduction part into the air outside the heat conduction part. That is, the thermal resistance of the heat dissipation structure is small, which can better dissipate heat from the first chip. In addition, since the contact surface between the side of the heat exchange part away from the heat conduction part and each first chip is the same size, enough working medium can be added into the heat exchange cavity so that the heat generated by each first chip can be completely absorbed by the working medium in the heat exchange cavity after passing through the heat exchange part. This ensures that the heat absorbed by the heat exchange part is the same for each first chip, and guarantees that the cooling effect of the heat dissipation structure on each first chip is the same, and the temperature of each first chip is basically the same.
[0033] In summary, the optoelectronic sealing system in this embodiment, through the above-mentioned settings, can reduce the internal thermal resistance of the heat dissipation structure and provide the same degree of heat dissipation to each first chip cooled by the heat dissipation structure. Attached Figure Description
[0034] To more clearly illustrate the technical solutions in the embodiments or exemplary embodiments of this application, the drawings used in the description of the embodiments or exemplary embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0035] Figure 1 This is a schematic diagram of the structure of an optoelectronic sealing system in one embodiment of this application.
[0036] Figure 2 for Figure 1 The diagram shows the structure of the heat dissipation structure in the optoelectronic sealing system after the first heat sink component has been removed.
[0037] Figure 3 This is a thermal resistance network of a heat dissipation structure in one embodiment of this application.
[0038] Figure label:
[0039] Photoelectric sealing system 1;
[0040] Heat dissipation structure 10;
[0041] First heat sink 100, heat sink fins 110;
[0042] Heat exchanger 200, heat exchange section 210, heat exchange cavity 211, contact area 212, heat conduction section 220, heat conduction cavity 221;
[0043] Liquid absorption layer 300, first liquid absorption layer 310, heat conduction channel 311, second liquid absorption layer 320, heat exchange chamber 321;
[0044] Second heat sink 400;
[0045] Circuit board 20;
[0046] substrate 30;
[0047] Second chip 40;
[0048] First chip 50. Detailed Implementation
[0049] To make the above-mentioned objectives, features, and advantages of this application more apparent and understandable, the specific embodiments of this application are described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a thorough understanding of this application. However, this application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.
[0050] In the description of this application, it should be understood that if terms such as "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" appear, these terms indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.
[0051] Furthermore, where the terms "first" and "second" appear, these terms are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined with "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, where the term "multiple" appears, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.
[0052] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise expressly limited. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.
[0053] In this application, unless otherwise expressly specified and limited, the use of descriptions such as "above" or "below" the second feature indicates that the first and second features are in direct contact or indirect contact via an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. Similarly, "below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.
[0054] It should be noted that if an element is referred to as being "fixed to" or "set on" another element, it can be directly on the other element or there may be an intervening element. If an element is considered to be "connected to" another element, it can be directly connected to the other element or there may be an intervening element. If so, the terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used in this application are for illustrative purposes only and do not represent the only possible implementation.
[0055] Please see Figure 1 , Figure 1A schematic diagram of the optoelectronic sealing system in one embodiment of this application is shown. This embodiment provides a heat dissipation structure 10, comprising: a heat exchanger 200, the heat exchanger 200 including a heat exchange portion 210 for contacting one or more first chips 50 and extending along a first direction, wherein the heat exchange portion 210 has a heat exchange cavity 211; and one or more heat-conducting portions 220 disposed on the side of the heat exchange portion 210 opposite to the one or more first chips 50 and extending along a second direction, wherein the one or more heat-conducting portions 220 have a heat-conducting cavity 221, the heat-conducting cavity 221 communicating with the heat exchange cavity 211; and wherein the heat exchanger 200 contains a working medium for heat exchange, the first direction and the second direction being non-parallel to each other.
[0056] In this embodiment, the heat dissipation structure 10 has a heat exchange section 210 that contacts multiple first chips 50 on the side opposite to the heat conduction section 220 along the first direction. The heat generated by each first chip 50 is conducted to the heat exchange cavity 211 inside the heat exchange section 210 through the contact surface between itself and the heat exchange section 210. The heat entering the heat exchange cavity 211 is absorbed by the working medium inside the heat exchange cavity 211. The working medium that absorbs the heat increases in temperature and vaporizes into hot steam. The hot steam leaves the heat exchange cavity 211 and enters the heat conduction cavity 221, and moves in the heat conduction cavity 221 along the extension direction of the heat conduction cavity 221. At the same time, the hot steam entering each heat conduction cavity 221 conducts its own heat to the air outside the heat conduction section 220 where the heat conduction cavity 221 is located through the cavity wall of the heat conduction cavity 221. After the heat of the hot steam is dissipated, it liquefies and becomes the working medium again.
[0057] In the above process, since the heat exchange cavity 211 is connected to the heat conduction cavity 221, the heat generated by the first chip 50 only has thermal resistance when it passes through the first chip 50 into the heat exchange cavity 211, the heating working medium becomes hot steam, and passes through the heat conduction part 220 into the air outside the heat conduction part 220. That is, the thermal resistance of the heat dissipation structure 10 is small, which can better dissipate heat from the first chip 50. In addition, since the contact surface between the side of the heat exchange part 210 away from the heat conduction part 220 and each first chip 50 is the same size, enough working medium can be added into the heat exchange cavity 211 so that the heat generated by each first chip 50 can be completely absorbed by the working medium in the heat exchange cavity 211 after passing through the heat exchange part 210. This makes the heat absorbed by the heat exchange part 210 the same for each first chip 50, ensuring that the cooling effect of the heat dissipation structure 10 on each first chip 50 is the same, and the temperature of each first chip 50 is basically the same.
[0058] In summary, the heat dissipation structure 10 in this embodiment can reduce the internal thermal resistance of the heat dissipation structure 10 through the above-mentioned settings, and provide the same degree of heat dissipation to each first chip 50 cooled by the heat dissipation structure 10.
[0059] It should be noted that the first chip 50 is used for photoelectric modulation, including but not limited to a light engine.
[0060] Please see Figure 1 and Figure 2 In some embodiments, the second direction is parallel to the direction of gravity of the working medium.
[0061] In this embodiment, by setting the second direction to be parallel to the gravity direction of the working medium, the heat of the hot steam in each heat conduction cavity 221 is dissipated, and after being reliquefied into the working medium, it can return from the heat conduction cavity 221 to the heat exchange cavity 211 under its own gravity.
[0062] In some embodiments, the working medium includes, but is not limited to, water and Freon.
[0063] Please see Figure 1 and Figure 2 In some embodiments, the heat conduction cavity 221 and the heat exchange cavity 211 are configured as vacuum chambers.
[0064] In this embodiment, by setting the heat conduction cavity 221 and the heat exchange cavity 211 as vacuum chambers, the boiling point of the working medium in the heat exchange cavity 211 can be reduced, making it easier for the working medium in the heat exchange cavity 211 to absorb heat and quickly turn into hot steam.
[0065] Please see Figure 1 and Figure 2 In some embodiments, the heat exchanger 200 is made of any one of copper, aluminum, or stainless steel.
[0066] In this embodiment, by setting the material of the heat exchanger 200 to include any one of copper, aluminum, and stainless steel, the heat absorption capacity of the heat exchanger 200 can be enhanced, the maximum heat that the heat exchanger 200 can absorb can be increased, and thus the heat generated by each first chip 50 can be uniformly absorbed by the heat exchanger 200.
[0067] Please see Figure 1 and Figure 2 In some embodiments, the heat dissipation structure 10 includes a liquid absorption layer 300 disposed within the heat dissipation structure 10. The liquid absorption layer 300 includes a first liquid absorption layer 310, which is located within the heat conduction cavity 221 and covers the cavity wall of the heat conduction cavity 221. The side of the first liquid absorption layer 310 away from the cavity wall of the heat conduction cavity 221 forms a heat conduction channel 311.
[0068] In this embodiment, the material of the first liquid-absorbing layer 310 can be the same as that of the heat exchanger 200. However, it is understood that in other embodiments, the material of the first liquid-absorbing layer 310 can also be different from that of the heat exchanger 200.
[0069] In this embodiment, the heat generated by the first chip 50 enters the heat exchange cavity 211 and is absorbed by the working medium inside the heat exchange cavity 211. The working medium absorbs heat, its temperature rises, and it vaporizes into hot steam. This hot steam leaves the heat exchange cavity 211 and enters the heat conduction channel 311, moving along the extension direction of the heat conduction channel 311. Simultaneously, the hot steam entering each heat conduction channel 311 passes through the first liquid absorption layer 310, conducting its own heat to the cavity wall of the heat conduction cavity 221. The heat conducted to the cavity wall of the heat conduction cavity 221 is further conducted through the cavity wall of the heat conduction cavity 221 and finally to the air outside the heat conduction part 220 where the heat conduction cavity 221 is located. The presence of the first liquid absorption layer 310 prevents the working medium from directly contacting the cavity wall of the heat conduction cavity 221, thus protecting the cavity wall of the heat conduction cavity 221.
[0070] In addition, it should be noted that the material of the first liquid absorbing layer 310 is the same as that of the heat exchanger 200. This can prevent a chemical reaction between the heat exchanger 200 and the first liquid absorbing layer 310, and prevent the cavity wall of the heat conduction cavity 221 in the heat exchanger 200 from being corroded by the first liquid absorbing layer 310.
[0071] In other embodiments, the material of the first absorbent layer 310 is configured to not chemically react with the heat exchanger 200.
[0072] Please see Figure 1 and Figure 2 In some embodiments, the first liquid-absorbing layer 310 is provided with a capillary structure (not shown in the figure), which is configured to transfer the working medium in contact with the side of the first liquid-absorbing layer 310 away from the cavity wall of the heat-conducting cavity 221 back to the heat exchange cavity 211.
[0073] In this embodiment, the hot steam entering each heat-conducting channel 311 is liquefied into a working medium after contacting the side of the first liquid-absorbing layer 310 away from the heat-conducting cavity 221. It is then transported back to the heat exchange cavity 211 for reuse by the capillary structure on the first liquid-absorbing layer 310.
[0074] It should be noted that the transport direction of the capillary structure on the first liquid absorption layer 310 is the first transport direction S1, which is parallel to the second direction.
[0075] Please see Figure 1 and Figure 2 In some embodiments, the liquid-absorbing layer 300 includes a second liquid-absorbing layer 320, which is located inside the heat exchange chamber 211 and covers the cavity wall of the heat exchange chamber 211. The side of the second liquid-absorbing layer 320 away from the cavity wall of the heat exchange chamber 211 forms a heat exchange chamber 321, in which the working medium is located, and the heat exchange chamber 321 is connected to the heat conduction channel 311.
[0076] In this embodiment, the material of the second liquid-absorbing layer 320 can be the same as that of the heat exchanger 200. However, it is understood that in other embodiments, the material of the second liquid-absorbing layer 320 can also be different from that of the heat exchanger 200.
[0077] In this embodiment, the heat generated by each first chip 50 is conducted to the second absorbing layer 320 through its contact surface with the heat exchange section 210. The heat conducted to the second absorbing layer 320 enters the heat exchange chamber 321 enclosed by the second absorbing layer 320. The heat entering the heat exchange chamber 321 is absorbed by the working medium inside the heat exchange chamber 321. The temperature of the working medium that absorbs the heat rises, and it vaporizes into hot steam. This hot steam leaves the heat exchange chamber 321 and enters the heat conduction channel 311. The presence of the second absorbing layer 320 prevents the working medium from directly contacting the cavity wall of the heat exchange chamber 211, thus protecting the cavity wall of the heat exchange chamber 211.
[0078] In addition, it should be noted that the material of the second liquid absorbing layer 320 is the same as that of the heat exchanger 200. This can prevent chemical reactions between the heat exchanger 200 and the second liquid absorbing layer 320, and prevent the cavity wall of the heat exchange chamber 211 in the heat exchanger 200 from being corroded by the second liquid absorbing layer 320.
[0079] In other embodiments, the material of the second absorbent layer 320 is configured to not chemically react with the heat exchanger 200.
[0080] In other embodiments, the second liquid-absorbing layer 320 is provided with a capillary structure, which is configured to transport the working medium in the heat exchange chamber 321 along the second transmission direction S2 to a position in the heat exchange chamber 321 corresponding to the contact surface of the heat exchange element 200 and the first chip 50, wherein the second transmission direction S2 is parallel to the first direction.
[0081] Please see Figure 1 and Figure 2 In some embodiments, multiple heat-conducting parts 220 are arranged at intervals along a first direction.
[0082] In this embodiment, by setting multiple heat-conducting parts 220 arranged at intervals along the first direction, the heat exchanger 200 can dissipate heat from the multiple first chips 50 located on the side of the heat exchanger 210 away from the heat-conducting parts 220 and arranged at intervals along the first direction.
[0083] Please see Figure 1 and Figure 2 In some embodiments, the heat dissipation structure 10 includes one or more sets of first heat dissipation components 100, which are disposed on the heat-conducting part 220.
[0084] In this embodiment, the hot steam entering each heat-conducting cavity 221 conducts its own heat through the cavity wall to the first heat sink 100 connected to the heat-conducting part 220 where the heat-conducting cavity 221 is located.
[0085] It should be further explained that the thermal resistance network of the heat dissipation structure 10 in this embodiment, such as Figure 3 As shown, a first contact thermal resistance is generated when the heat generated by the first chip 50 enters the heat exchange cavity 211; an evaporation thermal resistance is generated when the working medium in the heat exchange cavity 211 is heated and turns into hot steam and enters the heat conduction cavity 221; a second contact thermal resistance is generated when the heat of the hot steam in the heat conduction cavity 221 is conducted from the cavity wall of the heat conduction cavity 221 to the first heat sink 100; and a convection thermal resistance is generated when the heat in the first heat sink 100 is conducted to the air outside the first heat sink 100. In summary, it can be seen that the heat dissipation structure 10 in this embodiment has less thermal resistance during the heat dissipation process, and the heat dissipation structure 10 can dissipate heat better.
[0086] In some embodiments, the first heat sink 100 includes a plurality of heat sink fins 110.
[0087] Please see Figure 1 and Figure 2 In some embodiments, the heat exchange section 210 is provided with a contact area 212 for contacting the first chip 50, and the center of the contact area 212 is equidistant from the opposite sides of the heat exchange section 210 along the first direction.
[0088] In this embodiment, by setting the center of the contact area 212 and the distance between the two opposite sides of the heat exchange section 210 along the first direction to be equal, the working medium located in the heat exchange cavity 211 at the position corresponding to the contact area 212 along the first direction can move to the position corresponding to the contact area 212 in the heat exchange cavity 211 in a timely manner to absorb the heat generated by the first chip 50 and improve the heat dissipation efficiency of the heat dissipation structure 10.
[0089] It should be noted that the contact area 212 is the contact surface between the heat exchange section 210 and the first chip 50.
[0090] In some embodiments, the heat exchanger 200 includes a plurality of heat dissipation portions (not shown), and the heat conduction portion 220 is provided with at least one heat dissipation portion, the heat dissipation portion having a heat dissipation cavity (not shown), the heat dissipation cavity communicating with the heat conduction cavity 221.
[0091] In this embodiment, the hot steam entering each heat-conducting cavity 221, part of which conducts its own heat through the cavity wall of the heat-conducting cavity 221 to the air outside the heat-conducting part 220 where the heat-conducting cavity 221 is located; the other part enters the heat dissipation cavity and conducts its own heat to the air outside the heat dissipation part where the heat dissipation cavity is located.
[0092] In some embodiments, the heat dissipation structure 10 includes a plurality of first heat dissipation components 100, a portion of the first heat dissipation components 100 being disposed on the heat conduction portion 220, and another portion of the first heat dissipation components 100 being disposed on the heat dissipation portion.
[0093] Please see Figure 1 and Figure 2 In some embodiments, the heat dissipation structure 10 includes one or more sets of second heat dissipation components 400, which are used to contact the second chip 40 and dissipate heat from the second chip 40.
[0094] In this embodiment, the second heat sink 400 contacts the second chip 40 to dissipate heat from the heated second chip 40. It should be noted that the second chip 40 is used for communication switching, including but not limited to ASIC switching chips.
[0095] Please see Figure 1 , Figure 1 A schematic diagram of the structure of an optoelectronic sealing system according to an embodiment of this application is shown. The optoelectronic sealing system 1 provided in this application includes the aforementioned heat dissipation structure 10, a circuit board 20, a substrate 30, a second chip 40, and a plurality of first chips 50. The substrate 30 is disposed on one side of the circuit board 20 along a second direction and is electrically connected to the circuit board 20; the second chip 40 is disposed on the side of the substrate 30 away from the circuit board 20 and is electrically connected to the substrate 30; one or more first chips 50 are disposed on the side of the substrate 30 away from the circuit board 20 and are electrically connected to the substrate 30, and the first chips 50 are disposed on the outer periphery of the second chip 40; the heat exchange section 210 is on the side away from the heat conduction section 220 and contacts at least one first chip 50 on the side back of the substrate 30.
[0096] In this embodiment of the photoelectric sealing system 1, the heat exchange section 210, on the side away from the heat conduction section 220, contacts at least one first chip 50. When the side of the heat exchange section 210 away from the heat conduction section 220 contacts multiple first chips 50, the heat generated by each first chip 50 is conducted to the heat exchange cavity 211 inside the heat exchange section 210 through its contact surface with the heat exchange section 210. The heat entering the heat exchange cavity 211 is absorbed by the working medium inside the heat exchange cavity 211. The working medium that absorbs the heat increases in temperature and vaporizes into hot steam. The hot steam leaves the heat exchange cavity 211 and enters the heat conduction cavity 221, and moves in the heat conduction cavity 221 along the extension direction of the heat conduction cavity 221. At the same time, the hot steam entering each heat conduction cavity 221 conducts its own heat to the air outside the heat conduction section 220 where the heat conduction cavity 221 is located through the cavity wall of the heat conduction cavity 221. After the heat of the hot steam is dissipated, it liquefies and becomes the working medium again.
[0097] In the above process, since the heat exchange cavity 211 is connected to the heat conduction cavity 221, the heat generated by the first chip 50 only has thermal resistance when it passes through the first chip 50 into the heat exchange cavity 211, the heating working medium becomes hot steam, and passes through the heat conduction part 220 into the air outside the heat conduction part 220. That is, the thermal resistance of the heat dissipation structure 10 is small, which can better dissipate heat from the first chip 50. In addition, since the contact surface between the side of the heat exchange part 210 away from the heat conduction part 220 and each first chip 50 is the same size, enough working medium can be added into the heat exchange cavity 211 so that the heat generated by each first chip 50 can be completely absorbed by the working medium in the heat exchange cavity 211 after passing through the heat exchange part 210. This makes the heat absorbed by the heat exchange part 210 the same for each first chip 50, ensuring that the cooling effect of the heat dissipation structure 10 on each first chip 50 is the same, and the temperature of each first chip 50 is basically the same.
[0098] In summary, the optoelectronic sealing system 1 in this embodiment can reduce the internal thermal resistance of the heat dissipation structure 10 through the above-mentioned settings, and provide the same degree of heat dissipation to each first chip 50 cooled by the heat dissipation structure 10.
[0099] It should be added that, Figure 1 and Figure 2 The first direction, the second direction, and the third direction are set to intersect each other.
[0100] In some embodiments, the second chip 40 is provided on the side opposite to the substrate 30 along the second direction, which is in contact with the second heat sink 400, and the second heat sink 400 is configured to dissipate heat from the second chip 40.
[0101] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.
[0102] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.
Claims
1. A heat dissipation structure, characterized in that, The heat dissipation structure includes: A heat exchanger includes: a heat exchange portion for contacting one or more first chips and extending along a first direction, wherein the heat exchange portion has a heat exchange cavity; and One or more heat-conducting portions are disposed on the side of the heat exchange portion opposite to the one or more first chips and extend in a second direction, wherein the one or more heat-conducting portions have a heat-conducting cavity that communicates with the heat exchange cavity; and The heat exchanger contains a working medium for heat exchange, and the first direction and the second direction are not parallel to each other.
2. The heat dissipation structure according to claim 1, characterized in that, The second direction is parallel to the direction of gravity of the working medium.
3. The heat dissipation structure according to claim 1, characterized in that, The heat-conducting cavity and the heat-exchange cavity are constructed as a vacuum chamber.
4. The heat dissipation structure according to claim 1, characterized in that, The heat exchanger is made of any one of copper, aluminum, or stainless steel.
5. The heat dissipation structure according to claim 1, characterized in that, The heat dissipation structure includes a liquid absorption layer disposed within the heat dissipation structure. The liquid absorption layer includes a first liquid absorption layer, which is located within the heat conduction cavity and covers the cavity wall of the heat conduction cavity. The first liquid-absorbing layer forms a heat-conducting channel on the side away from the cavity wall of the heat-conducting cavity.
6. The heat dissipation structure according to claim 5, characterized in that, The first liquid-absorbing layer is provided with a capillary structure, which is configured to transfer the working medium that is in contact with the side of the first liquid-absorbing layer opposite to the cavity wall of the heat-conducting cavity back to the heat exchange cavity.
7. The heat dissipation structure according to claim 5, characterized in that, The liquid absorption layer includes a second liquid absorption layer, which is located inside the heat exchange cavity and covers the cavity wall of the heat exchange cavity; The second liquid-absorbing layer forms a heat exchange chamber on the side away from the cavity wall of the heat exchange chamber, the working medium is located in the heat exchange chamber, and the heat exchange chamber is connected to the heat conduction channel.
8. The heat dissipation structure according to claim 1, characterized in that, The plurality of heat-conducting parts are arranged at intervals along the first direction.
9. The heat dissipation structure according to claim 1, characterized in that, The heat dissipation structure includes one or more sets of first heat dissipation components, which are disposed on the heat-conducting part.
10. The heat dissipation structure according to claim 1, characterized in that, The heat exchange section is provided with a contact area for contacting the first chip, and the center of the contact area is equidistant from the opposite sides of the heat exchange section along the first direction.
11. The heat dissipation structure according to claim 1, characterized in that, The heat exchanger includes multiple heat dissipation sections, and at least one heat dissipation section is provided on the heat conduction section. The heat dissipation section has a heat dissipation cavity, and the heat dissipation cavity is in communication with the heat conduction cavity.
12. The heat dissipation structure according to claim 1, characterized in that, The heat dissipation structure includes one or more sets of second heat dissipation components, which are used to contact the second chip and dissipate heat from the second chip.
13. A photoelectric sealing system, characterized in that, Including the heat dissipation structure described in any one of claims 1 to 12, and Circuit board; A substrate is disposed on one side of the circuit board along the second direction and is electrically connected to the circuit board; The second chip is disposed on the side of the substrate opposite to the circuit board and is electrically connected to the substrate; One or more first chips are disposed on the side of the substrate away from the circuit board and electrically connected to the substrate, and the first chips are arranged in a ring around the outer periphery of the second chips; the side of the heat exchange section away from the heat conduction section is in contact with the side of at least one first chip away from the substrate.