Photovoltaic gap reflecting film and photovoltaic module

Abstract

The utility model relates to a photovoltaic gap reflecting film and a photovoltaic assembly. The photovoltaic gap reflective film includes: a base film layer; the first microstructure layer is located on one side of the base film layer, and the first microstructure layer comprises a plurality of first microprism units; the first metal reflecting layer is arranged on the side, away from the base film layer, of the first microstructure layer in a profiling mode; the second microstructure layer is located on the other side of the base film layer and comprises a plurality of second microprism units, and the number of the second microprism units in unit area is larger than that of the first microprism units; and the second metal reflecting layer is arranged on one side, far away from the base film layer, of the second microstructure layer in a profiling manner. When the photovoltaic gap reflecting film provided by the technical scheme of the utility model is applied, one surface of the second metal reflecting layer is attached to a photovoltaic panel; as the number of the second microprism units in unit area is larger than that of the first microprism units, the utilization rate of scattered light can be improved.

Description

TECHNICAL FIELD

[0001] The utility model relates to photovoltaic technology field especially relates to a photovoltaic gap reflection film and photovoltaic module. BACKGROUND

[0002] In recent years, the share of double-glass photovoltaic modules in photovoltaic modules has increased year by year, and the use of photovoltaic gap reflection films between the cell pieces has also increased. However, the single-sided structure can only utilize direct sunlight, and the light of the photovoltaic back glass cannot be utilized. Therefore, in the traditional technology, there is a double-sided prism structure reflection film, which is arranged in the gap between the double-glass module, and reflects the light entering from the front and back surfaces to the cell piece, thereby improving the power generation efficiency of the module. However, the paths of the sunlight from the front and back surfaces are different, and the structure of the back surface of the photovoltaic gap reflection film is still insufficient for light utilization. SUMMARY

[0003] Therefore, it is necessary to provide a photovoltaic gap reflection film and a photovoltaic module to solve the problem of how to improve the utilization rate of light.

[0004] A photovoltaic gap reflection film, comprising:

[0005] a base film layer;

[0006] a first microstructure layer located on one side of the base film layer, the first microstructure layer comprising a plurality of first micro-prism units;

[0007] a first metal reflection layer contoured on the side of the first microstructure layer away from the base film layer;

[0008] a second microstructure layer located on the other side of the base film layer, the second microstructure layer comprising a plurality of second micro-prism units, the number of second micro-prism units per unit area being greater than the number of first micro-prism units; and

[0009] a second metal reflection layer contoured on the side of the second microstructure layer away from the base film layer.

[0010] When the photovoltaic gap reflection film of the utility model is applied, one side of the second metal reflection layer is attached to the photovoltaic panel; the first microstructure layer and the first metal reflection layer are used to receive direct sunlight, and the utilization rate of sunlight is high; the second microstructure layer and the second metal reflection layer are used to receive scattered light generated by the scattering of direct sunlight irradiated to the ground or the surface of environmental objects. Since the number of second micro-prism units per unit area is greater than the number of first micro-prism units, the utilization rate of scattered light can be improved.

[0011] In a feasible implementation manner, the period and size of the first micro-prism unit are greater than the period and size of the second micro-prism unit.

[0012] In one possible implementation, the first micro-prism unit comprises a prism and / or a pyramid, and the height of the first micro-prism unit is 5-10 μm.

[0013] The second micro-prism unit comprises a prism and / or a pyramid, and the height of the second micro-prism unit is 3-5 μm.

[0014] In one possible implementation, the first micro-prism unit and the second micro-prism unit each comprise a triangular prism with a top angle of 110-130°, the arrangement direction of the triangular prism of the first micro-prism unit is parallel to that of the second micro-prism unit, and the angle between the axial direction of the triangular prism and the X-axis direction of the plane is 30-60°.

[0015] In one possible implementation, the first metal reflective layer is an aluminum reflective layer, a silver reflective layer or an indium reflective layer, and the thickness of the first metal reflective layer is 30-500 nm.

[0016] The second metal reflective layer is an aluminum reflective layer, a silver reflective layer or an indium reflective layer, and the thickness of the second metal reflective layer is 30-500 nm.

[0017] In one possible implementation, the first micro-structure layer and / or the second micro-structure layer contain inorganic particles with a particle size of 500 nm-2 μm.

[0018] In one possible implementation, the base film layer is a PET base film layer, and the thickness of the base film layer is 18-50 μm.

[0019] In one possible implementation, the photovoltaic gap reflective film further comprises a glue film layer, and the glue film layer is located on the side of the second metal reflective layer away from the base film layer.

[0020] In one possible implementation, the glue film layer is an EVA glue film layer or a POE glue film layer, and the thickness of the glue film layer is 60-80 μm.

[0021] A photovoltaic module comprises the photovoltaic gap reflective film.

[0022] The photovoltaic module comprises the photovoltaic gap reflective film, and one side of the second metal reflective layer of the photovoltaic gap reflective film is attached to a photovoltaic panel. The first micro-structure layer and the first metal reflective layer are used for receiving direct sunlight, and the utilization rate of sunlight is high. The second micro-structure layer and the second metal reflective layer are used for receiving scattered light generated by the irradiation of direct sunlight to the ground or the surface of an environmental object. Since the number of the second micro-prism units in a unit area is larger than that of the first micro-prism units, the utilization rate of scattered light can be improved. Attached Figure Description

[0023] Figure 1 This is a schematic diagram of the photovoltaic gap reflective film according to the first embodiment of the present invention;

[0024] Figure 2 This is a schematic diagram of the photovoltaic gap reflective film according to the second embodiment of the present invention;

[0025] Figure 3 This is a schematic diagram of the photovoltaic gap reflective film according to the third embodiment of the present invention;

[0026] Figure 4 This is a schematic diagram of the photovoltaic gap reflective film according to the fourth embodiment of the present invention;

[0027] Figure 5 This is a schematic diagram of the photovoltaic gap reflective film according to the fifth embodiment of this utility model. Detailed Implementation

[0028] To make the above-mentioned objects, features, and advantages of this utility model more apparent and understandable, the specific embodiments of this utility model will be described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a full understanding of this utility model. However, this utility model can be implemented in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of this utility model. Therefore, this utility model is not limited to the specific embodiments disclosed below.

[0029] It should be noted that when a component is said to be "fixed to" another component, it can be directly attached to the other component or there may be an intervening component. When a component is said to be "connected to" another component, it can be directly connected to the other component or there may be an intervening component. The terms "vertical," "horizontal," "left," "right," and similar expressions used in this document are for illustrative purposes only.

[0030] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.

[0031] Please see Figure 1 The photovoltaic gap reflective film 100 of the first embodiment of the present invention includes a base film layer 110, a first microstructure layer 120, a first metal reflective layer 130, a second microstructure layer 140, and a second metal reflective layer 150.

[0032] The first microstructure layer 120 is located on one side of the base film layer 110, and the first microstructure layer 120 comprises a plurality of first micro-prism units 121. The first microstructure layer 120 has a directional function for sunlight, and the first microstructure layer 120 is obtained by pressing the light-curing glue with a press roller. In the first microstructure layer 120 of the embodiment, the adjacent two first micro-prism units 121 are seamlessly connected. Of course, there can be a certain distance between the adjacent two first micro-prism units 121.

[0033] The first metal reflection layer 130 is contoured on the side of the first microstructure layer 120 away from the base film layer 110. The first metal reflection layer 110 is used for reflecting sunlight, and the first metal reflection layer 110 cooperates with the first microstructure layer 120 to directionally reflect solar energy. The processing mode of the first metal reflection layer 110 includes evaporation and magnetron sputtering.

[0034] The second microstructure layer 140 is located on the other side of the base film layer 110, and the second microstructure layer 140 comprises a plurality of second micro-prism units 141, and the number of the second micro-prism units 141 per unit area is more than the number of the first micro-prism units 121. The second microstructure layer 140 is used for reflecting scattered light generated by the irradiation of sunlight to the ground or the surface of an environmental object, and the second microstructure layer 140 is obtained by pressing the light-curing glue with a press roller. In the second microstructure layer 140 of the embodiment, the adjacent two second micro-prism units 141 are seamlessly connected. Of course, there can be a certain distance between the adjacent two second micro-prism units 141.

[0035] The second metal reflection layer 150 is contoured on the side of the second microstructure layer 140 away from the base film layer 110. The second metal reflection layer 150 is used for reflecting scattered light generated by the irradiation of sunlight to the ground or the surface of an environmental object. The processing mode of the second metal reflection layer 150 includes evaporation and magnetron sputtering.

[0036] When the photovoltaic gap reflection film 100 of the embodiment is applied, the first microstructure layer 120 and the first metal reflection layer 130 are used for receiving direct sunlight, the angle of the direct sunlight is 0-10°, so the utilization rate of the first microstructure layer 120 for sunlight is high; the second metal reflection layer 150 and the second microstructure layer 140 are used for receiving scattered light generated by the irradiation of direct sunlight to the ground or the surface of an environmental object, the angle of the light is no longer 0-10°, and since the number of the second micro-prism units 141 per unit area is more than the number of the first micro-prism units 121, the utilization rate of the scattered light can be improved.

[0037] On the basis of the foregoing embodiment, the period and size of the first microlens unit 121 are greater than those of the second microlens unit 141. The size of the first microlens unit 121 is, for example, the height and width of the first microlens unit 121. At this time, the number of the second microlens units 141 per unit area is greater than that of the first microlens units 121, which can improve the utilization rate of scattered light.

[0038] On the basis of the foregoing embodiment, the first microlens unit 121 includes a prism and / or a pyramid, and the height of the first microlens unit 121 is 5 μm to 10 μm. Further, the height of the first microlens unit 121 can be, but is not limited to, 5 μm, 6 μm, 7 μm, 8 μm, 9 μm, or 10 μm.

[0039] On the basis of the foregoing embodiment, the second microlens unit 141 includes a prism and / or a pyramid, and the height of the second microlens unit 141 is 3 μm to 5 μm. Further, the height of the second microlens unit 141 can be, but is not limited to, 3 μm, 4 μm, or 5 μm.

[0040] On the basis of the foregoing embodiment, the first microlens unit 121 and / or the second microlens unit 141 include a triangular prism with an apex angle of 110° to 130°. Specifically, the first microlens unit 121 and the second microlens unit 141 are arranged back to back, the convex part of the first microlens unit 121 faces upward, and the convex part of the second microlens unit 141 faces downward. Further, the arrangement direction of the triangular prisms of the first microlens unit 121 and the second microlens unit 141 is parallel, and the angle between the axis direction of the triangular prism and the X-axis direction of the plane is 30° to 60°. The X-axis direction of the plane is the same as the rolling direction of the base film. The arrangement of the triangular prism microlens units in the oblique direction can make the light better enter the silicon wafer, improve the total amount of reflected light entering the photovoltaic silicon wafer, and thus improve the power generation efficiency. Further, the apex angle of the triangular prism can be, but is not limited to, 110°, 120°, or 130°, and the angle between the axis direction of the triangular prism and the X-axis direction of the plane can be, but is not limited to, 30°, 40°, 45°, 50°, 55°, or 60°.

[0041] On the basis of the foregoing embodiment, the first metal reflection layer 130 is an aluminum reflection layer, a silver reflection layer, or an indium reflection layer, and the thickness of the first metal reflection layer 130 is 30 nm to 500 nm. Further, the thickness of the first metal reflection layer 130 can be, but is not limited to, 30 nm, 50 nm, 100 nm, 150 nm, 200 nm, 250 nm, 300 nm, 350 nm, 400 nm, 450 nm, or 500 nm.

[0042] On the basis of the foregoing embodiment, the second metal reflective layer 150 is an aluminum reflective layer, a silver reflective layer, or an indium reflective layer, and the thickness of the second metal reflective layer 150 is 30 nm to 500 nm. Further, the thickness of the second metal reflective layer 150 can be, but is not limited to, 30 nm, 50 nm, 100 nm, 150 nm, 200 nm, 250 nm, 300 nm, 350 nm, 400 nm, 450 nm, or 500 nm.

[0043] On the basis of the foregoing embodiment, the base film layer 110 is a PET (Polyethylene terephthalate) base film layer, and the thickness of the base film layer 110 is 18 μm to 50 μm. Further, the thickness of the base film layer 110 can be, but is not limited to, 18 μm, 20 μm, 25 μm, 30 μm, 35 μm, 40 μm, 45 μm, or 50 μm.

[0044] It should be noted that the structure of the photovoltaic gap reflective film of the utility model is not limited to this, and can be made into several deformations and improvements.

[0045] Please refer to Figure 2 The photovoltaic gap reflective film 200 of the second embodiment of the utility model comprises a base film layer 210, a first microstructure layer 220, a first metal reflective layer 230, a second microstructure layer 240, and a second metal reflective layer 250.

[0046] The first microstructure layer 220 is located on one side of the base film layer 210, and the first microstructure layer 220 comprises a plurality of first micro-prism units 221. The first microstructure layer 220 has a directional function for sunlight, and the first microstructure layer 220 is obtained by pressing a photo-curing glue with a pressing roller.

[0047] The first metal reflective layer 230 is contoured and arranged on the side of the first microstructure layer 220 away from the base film layer 210. The first metal reflective layer 210 is used for reflecting sunlight, and the first metal reflective layer 210 cooperates with the first microstructure layer 220 to directionally reflect solar energy. The processing mode of the first metal reflective layer 210 includes evaporation and magnetron sputtering.

[0048] The second microstructure layer 240 is located on the other side of the base film layer 210, and the second microstructure layer 240 comprises a plurality of second micro-prism units 241, and the number of the second micro-prism units 241 per unit area is more than the number of the first micro-prism units 221. The second microstructure layer 240 is used for reflecting scattered light generated by the irradiation of sunlight to the ground or the surface of environmental objects, and the second microstructure layer 240 is obtained by pressing a photo-curing glue with a pressing roller.

[0049] The second metal reflection layer 250 is formed on the side of the second microstructure layer 240 away from the base film layer 210. The second metal reflection layer 250 is used to reflect the scattered light generated by the direct sunlight irradiating the ground or the surface of the environmental object. The processing method of the second metal reflection layer 250 includes evaporation and magnetron sputtering.

[0050] In the embodiment, the first micro-prism unit 221 and the second micro-prism unit 241 each include a triangular prism with a top angle of 110°-130°. The arrangement direction of the triangular prism of the first micro-prism unit 221 and the triangular prism of the second micro-prism unit 241 are parallel, and the angle between the axial direction of the triangular prism and the X-axis direction of the plane is 30°-60°. Meanwhile, the period and size of the first micro-prism unit 221 are greater than the period and size of the second micro-prism unit 241.

[0051] In the embodiment, the first microstructure layer 220 contains a plurality of inorganic particles 222, and the particle size of the inorganic particles 222 is 500 nm-2 μm. The inorganic particles 222 are used to assist in reflecting the direct sunlight. The material of the first microstructure layer 220 is mixed with the inorganic particles 222 and then pressed by a press roller to form a plurality of first micro-prism units 221. Further, the particle size of the inorganic particles 222 can be, but is not limited to, 500 nm, 1 μm, 1.5 μm, or 2 μm.

[0052] The material of the inorganic particles 222 includes one or a combination of a plurality of aluminum oxide, barium sulfate, calcium carbonate, and titanium dioxide. The mass ratio of the first microstructure layer 220 to the inorganic particles 222 is 2:1-5:8.

[0053] When the photovoltaic gap reflection film 200 of the embodiment is applied, the first microstructure layer 220 and the first metal reflection layer 230 are used to receive the direct sunlight, and the angle of the direct sunlight is 0-10°, so that the utilization rate of the sunlight by the first microstructure layer 220 is high. The second metal reflection layer 250 and the second microstructure layer 240 are used to receive the scattered light generated by the direct sunlight irradiating the ground or the surface of the environmental object, and the angle of the light is no longer 0-10°. Since the period and size of the first micro-prism unit 221 are greater than the period and size of the second micro-prism unit 241, the number of the second micro-prism units 241 per unit area is greater than the number of the first micro-prism units 221, thereby improving the utilization rate of the scattered light.

[0054] Please refer to Figure 3 The photovoltaic gap reflection film 300 of the third embodiment includes a base film layer 310, a first microstructure layer 320, a first metal reflection layer 330, a second microstructure layer 340, and a second metal reflection layer 350.

[0055] The first microstructure layer 320 is located on one side of the base film layer 310, and the first microstructure layer 320 includes a plurality of first micro-prism units 321. The first microstructure layer 320 has a directional function for sunlight, and the first microstructure layer 320 is obtained by pressing the light-cured glue with a press roller.

[0056] The first metal reflection layer 330 is located on the side of the first microstructure layer 320 away from the base film layer 310. The first metal reflection layer 310 is used for reflecting sunlight, and the first metal reflection layer 310 cooperates with the first microstructure layer 320 to reflect sunlight. The processing method of the first metal reflection layer 310 includes evaporation and magnetron sputtering.

[0057] The second microstructure layer 340 is located on the other side of the base film layer 310, and the second microstructure layer 340 includes a plurality of second micro-prism units 341. The number of the second micro-prism units 341 per unit area is more than that of the first micro-prism units 321. The second microstructure layer 340 is used for reflecting scattered light generated by the irradiation of sunlight to the ground or the surface of an environmental object, and the second microstructure layer 340 is obtained by pressing the light-cured glue with a press roller.

[0058] The second metal reflection layer 350 is located on the side of the second microstructure layer 340 away from the base film layer 310. The second metal reflection layer 350 is used for reflecting scattered light generated by the irradiation of sunlight to the ground or the surface of an environmental object. The processing method of the second metal reflection layer 350 includes evaporation and magnetron sputtering.

[0059] In the embodiment, the first micro-prism unit 321 and the second micro-prism unit 241 each include a triangular prism with a top angle of 110°-130°. The arrangement direction of the triangular prism of the first micro-prism unit 321 is parallel to that of the second micro-prism unit 341, and the angle between the axial direction of the triangular prism and the X-axis direction of the plane is 30°-60°. Meanwhile, the period and size of the first micro-prism unit 321 are greater than those of the second micro-prism unit 341.

[0060] In the embodiment, the second microstructure layer 340 contains a plurality of inorganic particles 342, and the particle size of the inorganic particles 342 is 500 nm-2 μm. The inorganic particles 342 are used to assist in receiving scattered light generated by the irradiation of direct sunlight to the ground or the surface of an environmental object. The material of the second microstructure layer 340 is mixed with the inorganic particles 342, and then a plurality of second micro-prism units 341 are formed by pressing with a press roller. Further, the particle size of the inorganic particles 342 can be, but is not limited to, 500 nm, 1 μm, 1.5 μm, or 2 μm.

[0061] The material of the inorganic particles 342 includes a combination of one or more of alumina, barium sulfate, calcium carbonate, and titanium dioxide.

[0062] When the photovoltaic gap reflective film 300 of the present embodiment is applied, the first microstructure layer 220 and the first metal reflective layer 330 are used to receive direct sunlight, and the angle of the direct sunlight is 0-10°, so the utilization rate of the first microstructure layer 320 to sunlight is high; the second metal reflective layer 350 and the second microstructure layer 340 are used to receive scattered light generated by the direct sunlight irradiated to the ground or the surface of the environmental object, and the angle of the light is no longer 0-10°, and since the period and size of the first micro-prism unit 321 are larger than those of the second micro-prism unit 341, the number of the second micro-prism units 341 per unit area is more than that of the first micro-prism units 321, thereby improving the utilization rate of the scattered light.

[0063] Please refer to Figure 4 The photovoltaic gap reflective film 400 of the fourth embodiment of the present application comprises a base film layer 410, a first microstructure layer 420, a first metal reflective layer 430, a second microstructure layer 440, and a second metal reflective layer 450.

[0064] The first microstructure layer 420 is located on one side of the base film layer 410, and the first microstructure layer 420 comprises a plurality of first micro-prism units 421. The first microstructure layer 420 has a directional function for sunlight, and the first microstructure layer 420 is obtained by pressing a photo-curing glue with a pressing roller.

[0065] The first metal reflective layer 430 is contoured and arranged on the side of the first microstructure layer 420 away from the base film layer 410. The first metal reflective layer 410 is used to reflect sunlight, and the first metal reflective layer 410 cooperates with the first microstructure layer 420 to directionally reflect sunlight. The processing mode of the first metal reflective layer 410 includes evaporation and magnetron sputtering.

[0066] The second microstructure layer 440 is located on the other side of the base film layer 410, and the second microstructure layer 440 comprises a plurality of second micro-prism units 441, and the number of the second micro-prism units 441 per unit area is more than that of the first micro-prism units 421. The second microstructure layer 440 is used to reflect scattered light generated by sunlight irradiated to the ground or the surface of the environmental object, and the second microstructure layer 440 is obtained by pressing a photo-curing glue with a pressing roller.

[0067] The second metal reflective layer 450 is formed on the second microstructure layer 440 away from the base film layer 410. The second metal reflective layer 450 is used to reflect the scattered light generated by the direct sunlight irradiating the ground or the surface of the environmental object. The processing method of the second metal reflective layer 450 includes evaporation and magnetron sputtering.

[0068] In the embodiment, the first micro-prism unit 421 and the second micro-prism unit 441 each include a triangular prism with a top angle of 110°-130°. The arrangement direction of the triangular prism of the first micro-prism unit 421 and the triangular prism of the second micro-prism unit 441 are parallel, and the included angle between the axial direction of the triangular prism and the X-axis direction of the plane is 30°-60°. Meanwhile, the period and size of the first micro-prism unit 421 are greater than the period and size of the second micro-prism unit 441.

[0069] In the embodiment, the first microstructure layer 420 contains a plurality of inorganic particles 422 with a particle size of 500 nm-2 μm. The inorganic particles 422 are used to assist in reflecting the direct sunlight. The material of the first microstructure layer 420 is mixed with the inorganic particles 422 and then pressed by a press roller to form a plurality of first micro-prism units 421.

[0070] In the embodiment, the second microstructure layer 440 contains a plurality of inorganic particles 442 with a particle size of 500 nm-2 μm. The inorganic particles 442 are used to assist in receiving the scattered light generated by the direct sunlight irradiating the ground or the surface of the environmental object. The material of the second microstructure layer 440 is mixed with the inorganic particles 442 and then pressed by a press roller to form a plurality of second micro-prism units 441.

[0071] The material of the inorganic particles 422 and the inorganic particles 442 includes one or more combinations of alumina, barium sulfate, calcium carbonate, and titanium dioxide.

[0072] When the photovoltaic gap reflective film 400 of the embodiment is applied, the first microstructure layer 420 and the first metal reflective layer 430 are used to receive the direct sunlight with an angle of 0-10°, so that the utilization rate of the sunlight by the first microstructure layer 420 is high. The second metal reflective layer 450 and the second microstructure layer 440 are used to receive the scattered light generated by the direct sunlight irradiating the ground or the surface of the environmental object, and the angle of the light is no longer 0-10°. Since the period and size of the first micro-prism unit 421 are greater than the period and size of the second micro-prism unit 441, the number of the second micro-prism units 441 per unit area is greater than the number of the first micro-prism units 421, thereby improving the utilization rate of the scattered light.

[0073] It should be further noted that the photovoltaic gap reflective film of each of the above embodiments can further include an adhesive film layer on the side of the second metal reflective layer away from the base film layer. The adhesive film layer is used to adhere to the photovoltaic panel. The following describes the photovoltaic gap reflective film of the first embodiment, and it should be understood that the same applies to the other embodiments.

[0074] Referring to Figure 5 The photovoltaic gap reflective film 500 of the fifth embodiment of the utility model includes a base film layer 510, a first microstructure layer 520, a first metal reflective layer 530, a second microstructure layer 540, and a second metal reflective layer 550.

[0075] The first microstructure layer 520 is located on one side of the base film layer 510, and the first microstructure layer 520 includes a plurality of first microprism units 521. The first microstructure layer 520 has a directional function for sunlight, and the first microstructure layer 520 is obtained by pressing with a pressure roller using light-cured glue.

[0076] The first metal reflective layer 530 is contoured on the side of the first microstructure layer 520 away from the base film layer 510. The first metal reflective layer 510 is used to reflect sunlight, and the first metal reflective layer 510 cooperates with the first microstructure layer 520 to reflect sunlight directionally. The processing method of the first metal reflective layer 510 includes evaporation and magnetron sputtering.

[0077] The second microstructure layer 540 is located on the other side of the base film layer 510, and the second microstructure layer 540 includes a plurality of second microprism units 541, and the number of second microprism units 541 per unit area is greater than the number of first microprism units 521. The second microstructure layer 540 is used to reflect scattered light generated by the irradiation of sunlight to the ground or the surface of environmental objects, and the second microstructure layer 540 is obtained by pressing with a pressure roller using light-cured glue.

[0078] The second metal reflective layer 550 is contoured on the side of the second microstructure layer 540 away from the base film layer 510. The second metal reflective layer 550 is used to reflect scattered light generated by the irradiation of sunlight to the ground or the surface of environmental objects. The processing method of the second metal reflective layer 550 includes evaporation and magnetron sputtering.

[0079] In this embodiment, the first microprism unit 521 and the second microprism unit 541 each include a triangular prism with a top angle of 110°-130°, the arrangement direction of the triangular prism of the first microprism unit 521 and the triangular prism of the second microprism unit 541 is parallel, and the included angle between the axial direction of the triangular prism and the X-axis direction of the plane is 30°-60°. At the same time, the period and size of the first microprism unit 521 are greater than the period and size of the second microprism unit 541.

[0080] In the embodiment, the photovoltaic gap reflective film 500 further comprises an adhesive film layer 560, which is located on the side of the second metal reflective layer 550 away from the base film layer 510. The adhesive film layer 560 is used to adhere to the photovoltaic panel.

[0081] Further, the adhesive film layer 560 is an EVA (Ethylene Vinyl Acetate Copolymer) adhesive film layer or a POE (Poly Olefin Elastomer) adhesive film layer, and the thickness of the adhesive film layer 560 is 60-80 μm. Further, the thickness of the adhesive film layer 560 can be, but is not limited to, 60 μm, 65 μm, 70 μm, 75 μm or 80 μm.

[0082] When the photovoltaic gap reflective film 500 of the embodiment is applied, the first microstructure layer 520 and the first metal reflective layer 530 are used to receive direct sunlight, and the angle of the direct sunlight is 0-10°, so that the utilization rate of the sunlight by the first microstructure layer 520 is high; the second metal reflective layer 550 and the second microstructure layer 540 are used to receive scattered light generated by the direct sunlight irradiated to the ground or the surface of an environmental object, and the angle of the light is no longer 0-10°. Since the period and size of the first micro-prism unit 521 are greater than the period and size of the second micro-prism unit 541, the number of the second micro-prism units 541 per unit area is greater than the number of the first micro-prism units 521, so that the utilization rate of the scattered light can be improved.

[0083] A photovoltaic module comprises the photovoltaic gap reflective film.

[0084] The photovoltaic module of the technical scheme of the utility model comprises the photovoltaic gap reflective film, one side of the second metal reflective layer of the photovoltaic gap reflective film adheres to the photovoltaic panel; the first microstructure layer and the first metal reflective layer are used to receive direct sunlight, and the utilization rate of the sunlight is high; the second microstructure layer and the second metal reflective layer are used to receive scattered light generated by the direct sunlight irradiated to the ground or the surface of an environmental object, and since the number of the second micro-prism units per unit area is greater than the number of the first micro-prism units, the utilization rate of the scattered light can be improved.

[0085] With reference to the above-mentioned implementation content, in order to make the technical scheme of the application more specific, clear and easy to understand, the technical scheme of the application will be exemplified, but it should be noted that the content to be protected by the application is not limited to the following examples.

[0086] Example 1

[0087] The embodiment provides a photovoltaic gap reflective film, and the structure is as shown in Figure 5The photovoltaic interstitial reflective film 500 of the embodiment comprises, in sequence, a first metal reflective layer 530, a first microstructure layer 520, a base film layer 510, a second microstructure layer 540, a second metal reflective layer 550, and a glue film layer 560.

[0088] The first metal reflective layer 530 is an aluminum reflective layer with a thickness of 50 nm; the base film layer 510 is a PET base film layer with a thickness of 23 μm; the second metal reflective layer 550 is an aluminum reflective layer with a thickness of 50 nm; and the glue film layer 560 is an EVA glue film layer with a thickness of 70 μm.

[0089] The first microstructure layer 520 comprises a plurality of first micro-prism units 521 with the same size and period, and the second microstructure layer 540 comprises a plurality of second micro-prism units 541 with the same size and period. The first micro-prism units 521 and the second micro-prism units 541 are both pressed by a pressure roller with light-cured glue. The height of the first micro-prism units 521 is 5 μm, and the height of the second micro-prism units 541 is 3.5 μm.

[0090] The first micro-prism units 521 and the second micro-prism units 541 both comprise a triangular prism with a top angle of 120° and two bottom angles of 30°. The arrangement direction of the triangular prisms of the first micro-prism units 521 and the second micro-prism units 541 is parallel, and the angle between the axial direction of the triangular prisms and the X-axis direction of the plane is 45°.

[0091] Comparative Example 1

[0092] The comparative example is a comparative example of the embodiment 1, and provides a photovoltaic interstitial reflective film. The difference between the preparation method of the comparative example and that of the embodiment 1 is that the height of the second micro-prism units is 5 μm.

[0093] Performance test:

[0094] The solar reflectivity, breaking strength, peeling force, and power gain of the photovoltaic interstitial reflective films of the embodiment 1 and the comparative example 1 are tested by the following methods, and the test results are shown in Table 1.

[0095] Solar reflectivity: The ultraviolet-visible-infrared spectrophotometer is used to test the 0.3 μm-2.5 μm wave band.

[0096] Breaking strength: The universal tensile tester is used to test.

[0097] Peeling force: The tensile tester is used to test.

[0098] Power gain: The photovoltaic interstitial reflective films of the embodiment 1 and the comparative example 1 are attached to the surface of the photovoltaic backboard and laminated to obtain a double-glass photovoltaic module. The pulse light source simulator and the ABA+ level steady-state light source simulator are used to test.

[0099] Table 1 Test results of photovoltaic gap reflective films of Example 1 and Comparative Example 1

[0100]

[0101] As can be seen from Table 1, the solar reflectance of the photovoltaic gap reflective films of Example 1 and Comparative Example 1 is equal, and the breaking strength, peeling force and power gain of the photovoltaic gap reflective film of Example 1 are all increased compared with the photovoltaic gap reflective film of Comparative Example 1, indicating that in the photovoltaic gap reflective film of Example 1, the size of the second micro-prism unit 541 is smaller than the size of the first micro-prism unit 521, and thus the number of the second micro-prism units 541 in unit area is more than the number of the first micro-prism units 521, so that the utilization rate of scattered light can be improved; at the same time, since the density of the second micro-prism units 541 in equal area is greater, the mechanical strength is higher.

[0102] The technical features of the above-described embodiments can be combined arbitrarily, and for the sake of brevity, all possible combinations of the technical features in the above-described embodiments are not described, however, as long as the combinations of the technical features do not exist contradictions, they should be considered as the scope of the present disclosure.

[0103] The above-described embodiments only express several implementation manners of the present application, the description is more specific and detailed, but it should not be understood as a limitation on the scope of the present application. It should be pointed out that for ordinary skilled in the art, without departing from the concept of the present application, a number of modifications and improvements can be made, which all belong to the protection scope of the present application. Therefore, the protection scope of the present application patent should be subject to the appended claims.

Claims

1. A photovoltaic gap-reflective film, characterized in that, The photovoltaic interstitial reflective film comprises: a base film layer; a first microstructure layer located on one side of the base film layer, the first microstructure layer comprising a plurality of first micro-prism units; a first metal reflective layer contoured on the side of the first microstructure layer away from the base film layer; a second microstructure layer located on the other side of the base film layer, the second microstructure layer comprising a plurality of second micro-prism units, the number of the second micro-prism units per unit area being greater than the number of the first micro-prism units; and a second metal reflective layer contoured on the side of the second microstructure layer away from the base film layer.

2. The photovoltaic gap-reflective film of claim 1, wherein, The period and size of the first micro-prism units are greater than the period and size of the second micro-prism units.

3. The photovoltaic gap reflectance film of claim 1, wherein, The first micro-prism units comprise prisms and / or pyramids, and the height of the first micro-prism units is 5-10 μm; The second micro-prism units comprise prisms and / or pyramids, and the height of the second micro-prism units is 3-5 μm.

4. The photovoltaic gap reflectance film of claim 3, wherein, The first micro-prism units and the second micro-prism units both comprise triangular prisms with an apex angle of 110-130°, the arrangement direction of the triangular prisms of the first micro-prism units is parallel to the arrangement direction of the triangular prisms of the second micro-prism units, and the axial direction of the triangular prisms forms an angle of 30-60° with the X-axis direction of the plane.

5. The photovoltaic gap-reflective film of claim 1, wherein, The first metal reflective layer is an aluminum reflective layer, a silver reflective layer or an indium reflective layer, and the thickness of the first metal reflective layer is 30-500 nm; The second metal reflective layer is an aluminum reflective layer, a silver reflective layer or an indium reflective layer, and the thickness of the second metal reflective layer is 30-500 nm.

6. The photovoltaic gap-reflective film of claim 1, wherein, The first microstructure layer and / or the second microstructure layer contain a plurality of inorganic particles, and the particle size of the inorganic particles is 500 nm-2 μm.

7. The photovoltaic gap-reflective film of claim 1, wherein, The base film layer is a PET base film layer, and the thickness of the base film layer is 18-50 μm.

8. The photovoltaic gap-reflective film of claim 1, wherein, The photovoltaic interstitial reflective film further comprises a glue film layer located on the side of the second metal reflective layer away from the base film layer.

9. The photovoltaic gap reflectance film of claim 8, wherein, The glue film layer is an EVA glue film layer or a POE glue film layer, and the thickness of the glue film layer is 60-80 μm.

10. A photovoltaic module, characterized by, The photovoltaic interstitial reflective film comprises the photovoltaic interstitial reflective film according to any one of claims 1-9.

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