Reaction furnace and processing equipment

Abstract

The utility model provides a reaction furnace and processing equipment, relates to the field of semiconductor or photovoltaic material processing, and solves the technical problem that boron atoms cannot be doped into silicon wafers due to gas leakage of the reaction furnace. The reaction furnace comprises a furnace tube assembly, wherein a first opening of the furnace tube assembly is communicated with a reaction cavity; the first flange assembly is connected with the end, provided with the first opening, of the furnace tube assembly, the first flange assembly is provided with a first gas channel and a second opening, and protective gas can pass through the first gas channel to form a gas curtain at the first opening; the second flange assembly is connected with the first flange assembly, and the second flange assembly is provided with a second gas channel and a third opening; and the furnace door can be connected with the second flange assembly and is configured to seal the third opening. By means of the structure, when the furnace tube assembly leaks, protective gas can be introduced into the first gas channel, the protective gas can form a protective gas layer, and oxygen molecules are prevented from making contact with a product.

Description

Technical Field

[0001] This application relates to the field of semiconductor or photovoltaic material processing, specifically to a reactor and processing equipment. Background Technology

[0002] The working principle of solar cells is based on the photovoltaic effect of semiconductors. The photovoltaic effect is an effect in which the charge distribution within an object changes when it is exposed to light, generating electromotive force and current. With rapid market development and scientific and technological innovation, N-type crystalline silicon cells, with their higher photoelectric conversion efficiency and higher bifaciality, have achieved a market share of 98%.

[0003] The most critical process in N-type crystalline silicon solar cells is boron diffusion, which directly affects the quality of the PN junction, the passivation effect, and the cell's conversion efficiency. In N-type cells, the majority carriers are electrons, while boron is a trivalent element. Its doping process is acceptor doping, making it relatively difficult for boron atoms to occupy silicon lattice sites and generate holes. During the boron diffusion process, if oxygen reacts with the silicon wafer to form a SiO2 layer, it becomes difficult for boron atoms to be incorporated into the wafer. Furthermore, the SiO2 layer adsorbs boron atoms, further reducing the amount of boron atoms that can penetrate the wafer. Therefore, if leakage occurs (such as a loose seal between the flange and the furnace door), the silicon wafers inside the furnace tube must be reworked, impacting production efficiency and causing economic losses. Utility Model Content

[0004] To address the aforementioned technical problems, this application is proposed. Embodiments of this application provide a reactor and processing equipment.

[0005] In a first aspect, one embodiment of this application provides a reactor, comprising: a furnace tube assembly extending along a first direction, the furnace tube assembly having a reaction chamber, and a first opening on a fourth end face of the furnace tube assembly communicating with the reaction chamber, the reaction chamber being capable of accommodating a product; a first flange assembly located along the first direction on the side of the furnace tube assembly having the first opening, and connected to the end of the furnace tube assembly having the first opening, the first flange assembly having a first gas passage and a second opening, the first gas passage communicating with the first opening, the first gas passage having a first vent hole located on the first end face of the first flange assembly near the furnace tube assembly, the second opening communicating with the first opening, protecting the gas energy The gas can pass through the first gas channel and be discharged through the first gas outlet to form an air curtain at the first opening; the second flange assembly is located on the side of the first flange assembly away from the furnace tube assembly and is connected to the first flange assembly. The second flange assembly has a second gas channel and a third opening. The third opening communicates with the second opening. The second gas channel communicates with the first opening through the second opening. The process gas can enter the reaction chamber through the second gas channel, the second opening and the first opening, and the protective gas does not react with the process gas and the product; the furnace door can be connected to the second flange assembly and is configured to close the third opening. The air curtain is configured to restrict oxygen leaking from the third opening from entering the reaction chamber through the first opening.

[0006] In some embodiments, the first flange assembly includes: a first flange connected to one end of a furnace tube assembly having a first opening; the first flange having a first air inlet, a first cavity, and a plurality of first air outlets; the first air inlet communicating with the first cavity; the first cavity communicating with the plurality of first air outlets; the first air outlets extending along a first direction; the plurality of first air outlets being arranged around the axis of the first flange; and the first air inlet, the first cavity, and the plurality of first air outlets forming a first gas channel.

[0007] In some embodiments, the first flange assembly further includes a gas guide wall located on the side of the first vent near the reaction chamber; along the first direction, the gas guide wall and the fourth end face form a gas guide gap to guide the protective gas to be discharged radially along the reaction chamber to form an air curtain.

[0008] In some embodiments, the first flange assembly has a first annular groove on a first end face near the furnace tube assembly; wherein the reactor further includes: a first seal disposed in the first annular groove and configured to seal the gap between the first flange assembly and the furnace tube assembly; and / or, the second flange assembly has a second annular groove on a second end face near the first flange assembly; wherein the reactor further includes: a second seal disposed in the second annular groove and configured to seal the gap between the second flange assembly and the first flange assembly.

[0009] In some embodiments, the furnace tube assembly includes: a furnace tube extending in a first direction, the furnace tube having a reaction chamber, and one end of the furnace tube having a first opening; and a third flange assembly fitted onto the end of the furnace tube having the first opening and located on the side of the first flange assembly away from the second flange assembly, the third flange assembly being connectable to a base.

[0010] In some embodiments, the third flange assembly has a third annular groove on a third end face near the first flange assembly; wherein the reactor further includes a third seal disposed in the third annular groove and configured to seal the gap between the third flange assembly and the first flange assembly.

[0011] In some embodiments, the third flange assembly includes: a third flange sleeved on one end of the furnace tube having a first opening, the third flange having a third annular groove and a cooling channel, the third flange being connectable to a base, and the cooling channel being vented with a cooling medium.

[0012] In some embodiments, the diameter of the first vent hole ranges from 0.5 mm to 2 mm; and / or, a plurality of first vent holes are distributed circumferentially along the first flange, and the angle between the line connecting each pair of adjacent first vent holes and the center of the first flange ranges from 8 degrees to 12 degrees.

[0013] Secondly, one embodiment of this application provides a processing apparatus, including: a base; a reactor according to any of the first aspects above, wherein the furnace tube assembly of the reactor is connected to the base, the furnace tube assembly has a reaction chamber capable of accommodating a product; and a gas supply device connected to a first gas channel and a second gas channel of the reactor, wherein the gas supply device is capable of providing protective gas to the first gas channel and process gas to the second gas channel.

[0014] In some embodiments, the processing equipment further includes: a pressure detection device, connected to the reaction chamber, configured to detect the gas pressure value of the reaction chamber, and control the gas supply device to provide protective gas to the first gas channel when the gas pressure value is higher than a preset value.

[0015] The reactor and processing equipment proposed in this application embodiment can introduce protective gas into the first gas channel when the furnace tube assembly leaks. After entering the reaction chamber, the protective gas occupies the space around the product, forming a protective gas layer that prevents oxygen molecules from contacting the product and thus oxidizing it. Therefore, after detecting and repairing the leak, product processing can continue, reducing the impact of the leak on production efficiency and minimizing economic losses. Furthermore, since furnace tube assembly leaks are usually caused by a loose fit between the furnace door and the second flange assembly, placing the first flange assembly between the second flange assembly and the furnace tube assembly allows the protective gas curtain to better isolate oxygen. Attached Figure Description

[0016] The above and other objects, features, and advantages of this application will become more apparent from the more detailed description of the embodiments of this application in conjunction with the accompanying drawings. The drawings are provided to further illustrate the embodiments of this application and form part of the specification. They are used together with the embodiments of this application to explain this application and do not constitute a limitation thereof. In the drawings, the same reference numerals generally represent the same components or steps.

[0017] Figure 1 The diagram shown is a schematic diagram of the structure of a reactor provided in an exemplary embodiment of this application.

[0018] Figure 2 The image shown is an exemplary embodiment of this application. Figure 1 The diagram shows a magnified view of a portion of the reactor in region A.

[0019] Figure 3 The diagram shown is a partial structural schematic of the first flange after radial sectioning, provided in an exemplary embodiment of this application.

[0020] Figure 4 The diagram shown is a schematic diagram of the processing equipment provided in an exemplary embodiment of this application.

[0021] Figure 5 The image shown is a front view of the first flange provided in an exemplary embodiment of this application.

[0022] Figure label:

[0023] 100. Reactor; 110. Furnace tube assembly; 111. Furnace tube; 112. Third flange assembly; 1121. Third flange; 113. Fourth end face; 120. First flange assembly; 121. First flange; 1211. Second opening; 1212. First air inlet; 1213. First cavity; 1214. First air outlet; 122. First connector; 123. Air guide wall; 124. Air guide gap; 130. Second flange assembly; 131. Second flange; 140. First seal; 150. Second seal; 160. Third seal; 200. Processing equipment; 210. Base; 220. Gas supply device; 230. Pressure detection device. Detailed Implementation

[0024] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0025] Figure 1The diagram shown is a schematic representation of the structure of a reactor provided in an exemplary embodiment of this application. Figure 2 The image shown is an exemplary embodiment of this application. Figure 1 The diagram shown is a magnified view of a portion of the reactor in region A. Figure 3 The diagram shown is a partial structural schematic of the first flange after radial sectioning according to an exemplary embodiment of this application. Figure 5 The image shown is a front view of the first flange provided in an exemplary embodiment of this application.

[0026] like Figures 1-3 and Figure 5 As shown, this application embodiment provides a reactor 100, which includes: a furnace tube assembly 110, a first flange assembly 120, a second flange assembly 130, and a furnace door. The furnace tube assembly 110 is arranged along a first direction (e.g., Figure 1 Extending in the X direction, the furnace tube assembly 110 has a reaction chamber, and the fourth end face 113 of the furnace tube assembly 110 has a first opening, which communicates with the reaction chamber, and the reaction chamber can accommodate the product. The first flange assembly 120 is located along the first direction on the side of the furnace tube assembly 110 with the first opening and is connected to the end of the furnace tube assembly 110 with the first opening. The first flange assembly 120 has a first gas channel and a second opening 1211. The first gas channel communicates with the first opening and has a first vent 1214. The first vent 1214 is located on the first end face 113 of the first flange assembly 120 near the furnace tube assembly 110. The second opening 1211 communicates with the first opening. Protective gas can pass through the first gas channel and be discharged through the first vent 1214 to form an air curtain at the first opening. The second flange assembly 130 is located on the side of the first flange assembly 120 away from the furnace tube assembly 110 and is connected to the first flange assembly 120. The second flange assembly 130 has a second gas passage and a third opening, which communicates with the second opening. The second gas passage communicates with the first opening through the second opening 1211. Process gas can enter the reaction chamber through the second gas passage, the second opening 1211, and the first opening, while protecting the gas from reacting with the process gas and the product. The furnace door can be connected to the second flange assembly 130 and is configured to close the third opening. The second flange assembly 130 can fit tightly against the furnace door, thereby providing a sealing effect. The gas curtain is configured to restrict oxygen leaking from the third opening from entering the reaction chamber through the first opening.

[0027] In some embodiments, the first flange assembly 120 further includes a gas guide wall 123 located on the side of the first vent 1214 near the reaction chamber. The side of the gas guide wall 123 facing away from the reaction chamber forms the inner wall of the first vent 1214. Along a first direction, the gas guide wall 123 and the fourth end face 113 form a gas guide gap 124 to guide protective gas to be discharged radially along the reaction chamber to form an air curtain. The flat fourth end face 113 forms an airflow direction that is approximately radial to the reaction chamber, so that the generated air curtain has a better confinement effect on the gas entering the reaction chamber through the first opening.

[0028] For example, the product may be a silicon wafer, a solar cell, a glass substrate, or a crystal wafer.

[0029] For example, the first flange assembly 120 includes a first flange 121 connected to one end of the furnace tube assembly 110 having a first opening, and the first flange 121 having a first gas passage and a second opening 1211.

[0030] For example, the first flange 121 has an annular shape in the cross section perpendicular to the first direction.

[0031] For example, the second flange assembly 130 includes a second flange 131 connected to the first flange 121, and the second flange 131 has a second gas passage and a third opening.

[0032] For example, the second flange 131 has an annular shape in the cross section perpendicular to the first direction.

[0033] In the above embodiments, when the furnace tube assembly 110 leaks, a protective gas can be introduced into the first gas channel. After entering the reaction chamber, the protective gas occupies the space around the product, forming a protective gas layer that prevents oxygen molecules from contacting the product and thus oxidizing it. Therefore, after detecting and repairing the leak, product processing can continue, reducing the impact of the leak on production efficiency and minimizing economic losses. Furthermore, since leaks in the furnace tube assembly 110 are usually caused by a loose fit between the furnace door and the second flange assembly 130, placing the first flange assembly 120 between the second flange assembly 130 and the furnace tube assembly 110 allows the protective gas curtain to better isolate oxygen.

[0034] In some embodiments, such as Figure 2 , Figure 3 and Figure 5As shown, the first flange assembly 120 includes a first flange 121. The first flange 121 is connected to one end of the furnace tube assembly 110 with a first opening. The first flange 121 has a first air inlet 1212, a first cavity 1213, and a plurality of first air outlets 1214. The first air inlet 1212 communicates with the first cavity 1213, and the first cavity 1213 communicates with the plurality of first air outlets 1214. The first air outlets 1214 extend along a first direction, and the plurality of first air outlets 1214 are arranged around the axis of the first flange 121. The first air inlet 1212, the first cavity 1213, and the plurality of first air outlets 1214 form a first gas channel.

[0035] The first air inlet 1212 can be connected to the air supply device 220.

[0036] For example, the first air inlet 1212 extends radially along the first flange 121.

[0037] For example, the first cavity 1213 is an annular gas passage arranged circumferentially along the first flange 121.

[0038] For example, the first flange assembly 120 further includes a first connector 122. The first connector 122 communicates with the first air inlet 1212 and is capable of communicating with the air supply device 220.

[0039] In the above embodiments, this structure allows the protective gas ejected from the multiple first vent holes 1214 to quickly form an air curtain, isolating oxygen and thus preventing the product from being oxidized.

[0040] In some embodiments, the diameter of the first vent 1214 ranges from 0.5 mm to 2 mm, and / or, a plurality of first vents 1214 are distributed circumferentially along the first flange 121, and the angle between the line connecting each pair of adjacent first vents 1214 and the center of the first flange 121 (e.g., ...) is... Figure 5 The angle (m) in the middle ranges from 8 degrees to 12 degrees.

[0041] For example, the diameter of the first vent 1214 is 1 mm, and the angle between the line connecting each pair of adjacent first vents 1214 and the center of the first flange 121 is 11 degrees.

[0042] In the above embodiments, by making the first vent 1214 have an appropriate aperture and spacing, the protective gas can be uniformly and quickly formed into an air curtain.

[0043] In some embodiments, the second flange 131 has a second air inlet, a second cavity, and at least one second air outlet. The second air inlet communicates with the second cavity, and the second cavity communicates with the second air outlet. The second air inlet, the second cavity, and at least one second air outlet form a second gas passage.

[0044] The second air inlet can be connected to the air supply device 220.

[0045] For example, the second flange assembly 130 further includes a second connector. The second connector communicates with the second air inlet and is capable of communicating with the air supply device 220.

[0046] In some embodiments, such as Figure 2 As shown, the first flange assembly 120 has a first annular groove on its first end face 113 near the furnace tube assembly 110. The reactor 100 also includes a first seal 140. The first seal 140 is disposed within the first annular groove and configured to seal the gap between the first flange assembly 120 and the furnace tube assembly 110.

[0047] For example, the first seal 140 has an annular shape in a cross section perpendicular to the first direction.

[0048] For example, the first flange 121 has a first end face 113.

[0049] In the above embodiments, by providing the first sealing element 140, the sealing performance of the reactor 100 can be improved, preventing air leakage between the first flange assembly 120 and the furnace tube assembly 110.

[0050] In some embodiments, such as Figure 2 As shown, the second flange assembly 130 has a second annular groove on its second end face near the first flange assembly 120. The reactor 100 also includes a second seal 150. The second seal 150 is disposed within the second annular groove and configured to seal the gap between the second flange assembly 130 and the first flange assembly 120.

[0051] For example, the second seal 150 has an annular shape in the cross section perpendicular to the first direction.

[0052] For example, the second flange 131 has a second end face.

[0053] In the above embodiments, by providing the second sealing element 150, the sealing performance of the reactor 100 can be improved, preventing air leakage between the second flange assembly 130 and the first flange assembly 120.

[0054] In some embodiments, such as Figure 1 and Figure 2As shown, the furnace tube assembly 110 includes a furnace tube 111 and a third flange assembly 112. The furnace tube 111 extends along a first direction and has a reaction chamber. One end of the furnace tube 111 has a first opening. The third flange assembly 112 is sleeved on the end of the furnace tube 111 with the first opening and is located on the side of the first flange assembly 120 away from the second flange assembly 130. The third flange assembly 112 can be connected to the base 210. The base 210 is a support structure for placing the reactor 100.

[0055] In the above embodiments, by providing the third flange assembly 112, the reactor 100 can be supported and fixed on the base.

[0056] In some embodiments, such as Figure 2 As shown, the third flange assembly 112 has a third annular groove on its third end face near the first flange assembly 120. The reactor 100 also includes a third seal 160. The third seal 160 is disposed in the third annular groove and configured to seal the gap between the third flange assembly 112 and the first flange assembly 120.

[0057] For example, the third seal 160 has an annular shape in the cross section perpendicular to the first direction.

[0058] In the above embodiments, by providing a third sealing element 160, the sealing performance of the reactor 100 can be improved, preventing air leakage between the third flange assembly 112 and the first flange assembly 120.

[0059] In some embodiments, such as Figure 2 As shown, the third flange assembly 112 includes a third flange 1121. The third flange 1121 is sleeved on the end of the furnace tube 111 that has a first opening. The third flange 1121 has a third annular groove and a cooling channel. The third flange 1121 can be connected to the base 210, and the cooling channel can be circulated with a cooling medium.

[0060] For example, the cooling medium is a coolant or a cooling gas.

[0061] In the above embodiments, by introducing a cooling medium into the cooling channel, the temperature of the third flange 1121 can be reduced, thereby preventing the third seal 160 from being damaged at high temperatures.

[0062] In some embodiments, the protective gas may include at least one inert gas.

[0063] In some embodiments, the protective gas includes nitrogen and / or argon.

[0064] In the above embodiments, if nitrogen is used as a protective gas, a large number of nitrogen molecules will form a barrier, preventing leaked oxygen molecules from contacting the product and thus avoiding oxidation. Since nitrogen preparation and extraction are relatively simple and inexpensive, it can save costs for large-scale solar cell production. Furthermore, nitrogen has stable chemical properties, is non-toxic and odorless, and poses low safety risks during use.

[0065] In related technologies, reactors typically consist of only two flanges: an inner flange fitted over the furnace tube for fixing it, and an outer flange fitted to the furnace door for sealing. This flange structure has a relatively simple function, serving only as an isolation and sealing mechanism. To compare the process performance of the reactor 100 provided in this application embodiment with that of reactors in related technologies under leaking conditions, the applicant measured two sets of sheet resistance data for silicon wafers obtained after leaking and repairing the reactors in this application embodiment 100 and those in related technologies, respectively, by reprocessing the silicon wafers.

[0066] Table 1 below shows the sheet resistance data of silicon wafers corresponding to the reactors provided in the embodiments of this application, and Table 2 shows the sheet resistance data of silicon wafers corresponding to the reactors in related technologies. In this test, 10 small boats were placed in both the reactor 100 and the reactors in related technologies. Multiple silicon wafers were placed in each boat, and one silicon wafer was selected from each boat as the test wafer. P1, P2, P3, P4, and P5 represent the sheet resistance of the five test points of the test wafer, the average sheet resistance represents the average sheet resistance of the five test points, the sheet resistance uniformity represents the uniformity of the sheet resistance of the test wafer, and the average sheet resistance uniformity represents the average uniformity of the sheet resistance of the 10 test wafers.

[0067] Table 1. Sheet resistance data of silicon wafers corresponding to the reactors provided in the embodiments of this application.

[0068]

[0069] Table 2 shows the silicon wafer sheet resistance data corresponding to the reactors in the relevant technologies.

[0070]

[0071] As shown in Tables 1 and 2 above, the reactor 100 provided in this embodiment of the application can make the sheet resistance data of silicon wafers relatively uniformly within the control range of statistical process control (SPC), and can be tracked individually until the various data of the screen are basically in line with the production line. With the reactors in related technologies, because the silicon wafer is oxidized by oxygen, a SiO2 layer is generated, and the boron source doping is irregular and uneven, the sheet resistance uniformity is poor, most sheet resistance data exceeds the SPC control range, the efficiency of individual data tracking is low, and the yield is poor.

[0072] Figure 4 The diagram shown is a schematic diagram of the processing equipment provided in an exemplary embodiment of this application.

[0073] Based on the same concept, such as Figure 4 As shown in the illustration, this application also provides a processing apparatus 200, which includes a base 210, a reaction furnace 100 as described in the above embodiment, and a gas supply device 220. The furnace tube assembly 110 of the reaction furnace 100 is connected to the base 210, and the furnace tube assembly 110 has a reaction chamber capable of accommodating products. The gas supply device 220 is connected to a first gas channel and a second gas channel of the reaction furnace 100, and the gas supply device 220 is capable of providing protective gas to the first gas channel and process gas to the second gas channel.

[0074] In some embodiments, the processing equipment 200 further includes a pressure detection device 230. The pressure detection device 230 is connected to the reaction chamber and is configured to detect the gas pressure value of the reaction chamber, and control the gas supply device 220 to provide protective gas to the first gas channel when the gas pressure value is higher than a preset value.

[0075] In the above embodiments, by setting a pressure detection device 230, it is possible to automatically detect whether the reactor 100 is leaking gas, and automatically control the gas supply device 220 to provide protective gas to the reaction chamber, thus saving manpower.

[0076] The basic principles of this application have been described above with reference to specific embodiments. However, it should be noted that the advantages, benefits, and effects mentioned in this application are merely examples and not limitations, and should not be considered as essential features of each embodiment of this application. Furthermore, the specific details disclosed above are for illustrative and facilitative purposes only, and are not limitations. These details do not limit the application to the necessity of employing the aforementioned specific details for implementation.

[0077] The block diagrams of devices, apparatuses, devices, and systems involved in this application are merely illustrative examples and are not intended to require or imply that they must be connected, arranged, or configured in the manner shown in the block diagrams. As those skilled in the art will recognize, these devices, apparatuses, devices, and systems can be connected, arranged, and configured in any manner. Words such as “comprising,” “including,” “having,” etc., are open-ended terms meaning “including but not limited to,” and are used interchangeably with them. The terms “or” and “and” as used herein refer to the terms “and / or,” and are used interchangeably with them unless the context clearly indicates otherwise. The term “such as” as used herein refers to the phrase “such as but not limited to,” and is used interchangeably with it.

[0078] It should also be noted that in the apparatus, equipment, and methods of this application, the components or steps can be disassembled and / or recombined. These disassemblies and / or recombinations should be considered as equivalent solutions of this application.

[0079] The above description of the disclosed aspects is provided to enable any person skilled in the art to make or use this application. Various modifications to these aspects will be readily apparent to those skilled in the art, and the general principles defined herein can be applied to other aspects without departing from the scope of this application. Therefore, this application is not intended to be limited to the aspects shown herein, but rather to be accorded the widest scope consistent with the principles and novel features disclosed herein.

[0080] The above description has been given for purposes of illustration and description. Furthermore, this description is not intended to limit the embodiments of this application to the forms disclosed herein. Although numerous exemplary aspects and embodiments have been discussed above, those skilled in the art will recognize certain variations, modifications, alterations, additions, and sub-combinations thereof.

Claims

1. A reactor, characterized in that, include: A furnace tube assembly extends along a first direction, the furnace tube assembly has a reaction chamber, and the fourth end face of the furnace tube assembly has a first opening, the first opening communicating with the reaction chamber, the reaction chamber being capable of accommodating a product; A first flange assembly is located along the first direction on the side of the furnace tube assembly having the first opening and is connected to the end of the furnace tube assembly having the first opening. The first flange assembly has a first gas passage and a second opening. The first gas passage communicates with the first opening. The first gas passage has a first vent hole. The first vent hole is located on the first end face of the first flange assembly near the furnace tube assembly. The second opening communicates with the first opening. Protective gas can pass through the first gas passage and be discharged through the first vent hole to form an air curtain at the first opening. The second flange assembly is located on the side of the first flange assembly away from the furnace tube assembly and is connected to the first flange assembly. The second flange assembly has a second gas passage and a third opening. The third opening communicates with the second opening. The second gas passage communicates with the first opening through the second opening. Process gas can enter the reaction chamber through the second gas passage, the second opening and the first opening. The protective gas does not react with the process gas and the product. The furnace door, which can be connected to the second flange assembly, is configured to close the third opening, and the air curtain is configured to restrict oxygen leaking from the third opening from entering the reaction chamber through the first opening.

2. The reactor according to claim 1, characterized in that, The first flange assembly includes: A first flange is connected to one end of the furnace tube assembly having the first opening. The first flange has a first air inlet, a first cavity, and a plurality of first air outlets. The first air inlet communicates with the first cavity, and the first cavity communicates with the plurality of first air outlets. The first air outlets extend along the first direction, and the plurality of first air outlets are arranged around the axis of the first flange. The first air inlet, the first cavity, and the plurality of first air outlets form the first gas channel.

3. The reactor according to claim 2, characterized in that, The first flange assembly also has a gas guide wall located on the side of the first gas outlet near the reaction chamber; Along the first direction, the gas guide wall and the fourth end face form a gas guide gap to guide the protective gas to be discharged radially along the reaction chamber to form the air curtain.

4. The reactor according to claim 1 or 2, characterized in that, The first flange assembly has a first annular groove on its first end face near the furnace tube assembly; The reactor further includes: A first sealing element is disposed within the first annular groove and is configured to seal the gap between the first flange assembly and the furnace tube assembly; And / or, The second flange assembly has a second annular groove on its second end face near the first flange assembly; The reactor further includes: The second seal is disposed within the second annular groove and is configured to seal the gap between the second flange assembly and the first flange assembly.

5. The reactor according to claim 1 or 2, characterized in that, The furnace tube assembly includes: A furnace tube extends along the first direction, the furnace tube having the reaction chamber, and one end of the furnace tube having the first opening; A third flange assembly is fitted onto the end of the furnace tube that has the first opening and is located on the side of the first flange assembly away from the second flange assembly. The third flange assembly can be connected to the base.

6. The reactor according to claim 5, characterized in that, The third flange assembly has a third annular groove on its third end face near the first flange assembly; The reactor further includes: A third seal, disposed in the third annular groove, is configured to seal the gap between the third flange assembly and the first flange assembly.

7. The reactor according to claim 6, characterized in that, The third flange assembly includes: The third flange is fitted onto the end of the furnace tube that has the first opening. The third flange has the third annular groove and a cooling channel. The third flange can be connected to the base, and the cooling channel can be circulated with a cooling medium.

8. The reactor according to claim 2, characterized in that, The diameter of the first vent hole ranges from 0.5 mm to 2 mm; And / or, a plurality of the first vent holes are distributed along the circumference of the first flange, and the angle between the line connecting each pair of adjacent first vent holes and the center of the first flange is between 8 degrees and 12 degrees.

9. A processing device, characterized in that, include: abutment; The reactor according to any one of claims 1 to 8, wherein the furnace tube assembly of the reactor is connected to the base, the furnace tube assembly has a reaction chamber capable of accommodating the product; A gas supply device is connected to the first gas channel and the second gas channel of the reactor. The gas supply device is capable of providing protective gas to the first gas channel and process gas to the second gas channel.

10. The processing equipment according to claim 9, characterized in that, Also includes: A pressure detection device, connected to the reaction chamber, is configured to detect the gas pressure value of the reaction chamber, and, if the gas pressure value is higher than a preset value, control the gas supply device to provide the protective gas to the first gas channel.

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