TO packaging structure of high-sensitivity wide-spectrum APD and SOA optical detector

Abstract

The utility model relates to the technical field of wide-spectrum and optical detector packaging, in particular to a TO packaging structure of a high-sensitivity wide-spectrum APD and SOA optical detector, which comprises a TO base, a lens cover is mounted on the TO base, a gradient refractive index lens is arranged on the lens cover, a vertical metal component is mounted on the TO base, and the vertical metal component is arranged on the TO base. A thermoelectric cooler is arranged on one side of the vertical metal component, a semiconductor optical amplifier is installed on the thermoelectric cooler, and an avalanche optical detector is arranged on the bottom side of the thermoelectric cooler. An SOA semiconductor optical amplifier is integrated, optical signals are effectively amplified, noise is reduced, and the signal amplification capacity and stability of the system are improved. The SOA semiconductor optical amplifier can provide high gain in a wide spectral range, and makes up for the insufficient sensitivity of the APD under certain wavelengths. Through the integrated design, the overall performance of the optical detector can be remarkably improved.

Description

Technical Field

[0001] This utility model relates to the field of broadband and photodetector packaging technology, and particularly to the TO packaging structure of high-sensitivity broadband APD and SOA photodetectors. Background Technology

[0002] Optical detection technology is widely used in many fields, including communications, medical, industrial inspection, and scientific research. The performance of the photodetector directly affects the effectiveness and efficiency of these applications. Traditional photodetectors mainly include photodiodes (PDs) and avalanche photodiodes (APDs). Among them, APDs are widely used in applications requiring high-sensitivity detection due to their high-gain characteristics. However, existing APD photodetectors lack sufficient sensitivity over a wide spectral range, limiting their application scope. Therefore, a TO packaging structure for a high-sensitivity, wide-spectral APD combined with an SOA photodetector is needed.

[0003] Insufficient sensitivity: Traditional APD photodetectors lack sensitivity over a wide spectral range, failing to provide consistent detection performance across multiple wavelengths of light. This is primarily due to the differences in the APD's gain mechanism at different wavelengths, leading to uneven sensitivity.

[0004] Signal distortion: Under high-power optical signals, APDs are prone to signal distortion, affecting detection accuracy. This is especially true in applications requiring high dynamic range, where signal distortion can severely impact detection performance.

[0005] Complex packaging: Existing photodetector systems typically consist of multiple components, resulting in complex packaging and poor heat dissipation. This not only increases manufacturing costs but also reduces system reliability and stability.

[0006] To address this, a TO packaging structure for a high-sensitivity, wide-spectrum APD and SOA photodetector is proposed. Summary of the Invention

[0007] The purpose of this invention is to address the shortcomings of existing technologies by proposing a TO packaging structure for a high-sensitivity, wide-spectrum APD and SOA photodetector.

[0008] To achieve the above objectives, the present invention adopts the following technical solution:

[0009] A TO package structure for a high-sensitivity broadband APD and SOA photodetector includes a TO base, a lens cover mounted on the TO base, a gradient refractive index lens disposed on the lens cover, a vertical metal component mounted on the TO base, a thermoelectric cooler disposed on one side of the vertical metal component, a semiconductor optical amplifier mounted on the thermoelectric cooler, and an avalanche photodetector disposed on the bottom side of the thermoelectric cooler.

[0010] Preferably, the lens cap is placed on the top surface of the TO base, the lens cap has a through groove, the gradient refractive index lens is installed in the through groove, and a bicurvature lens is installed between the inner walls of the lens cap.

[0011] Preferably, the vertical metal component is mounted on the top surface of the TO base, one side of the vertical metal component is arc-shaped, the thermoelectric cooler is mounted on the other side of the vertical metal component, a gap is left between the thermoelectric cooler and the TO base, and the semiconductor optical amplifier is mounted on the front side of the thermoelectric cooler.

[0012] Preferably, the avalanche light detector is installed at the center of the TO base, and multiple pins are arranged on the outer side of the avalanche light detector, with the bottom end of the pins extending to the bottom side of the TO base.

[0013] The beneficial effects of this utility model are:

[0014] This solution integrates an SOA semiconductor optical amplifier, effectively amplifying the optical signal and reducing noise, thereby improving the system's signal amplification capability and stability. The SOA semiconductor optical amplifier can provide high gain over a wide spectral range, compensating for the insufficient sensitivity of the APD at certain wavelengths. This integrated design significantly improves the overall performance of the photodetector.

[0015] Specifically, the SOA semiconductor optical amplifier employs a multi-quantum-well structure and optimized waveguide design, enabling it to provide stable gain across a wide spectral range. The APD utilizes high-quality materials and advanced manufacturing processes to ensure high responsivity across the wide spectral range. By co-packaging the SOA and APD with TIA, and through precise thermal management and optimized circuit design, the entire system maintains high sensitivity and low distortion under high-power optical signals. Attached Figure Description

[0016] Figure 1 This is a cross-sectional schematic diagram of the TO packaging structure of the high-sensitivity broadband APD and SOA photodetector proposed in this utility model.

[0017] Figure 2 This is a schematic diagram of the front view of the TO packaging structure of the high-sensitivity broadband APD and SOA photodetector proposed in this utility model.

[0018] Figure 3 This is a structural schematic diagram of the vertical Jiangsu component and the thermoelectric cooler section;

[0019] Figure 4 This is a schematic diagram of the overall structure of the TO packaging structure of the high-sensitivity broadband APD and SOA photodetector proposed in this utility model.

[0020] In the diagram: 1. TO base; 2. Lens cap; 3. Pin; 4. Avalanche light detector; 5. Gradient refractive index lens; 6. Semiconductor optical amplifier; 7. Vertical metal component; 8. Thermoelectric cooler; 9. Hypercurvature lens. Detailed Implementation

[0021] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present utility model. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments.

[0022] Example: Refer to Figure 1-4 The TO packaging structure of a high-sensitivity broadband APD and SOA photodetector includes a TO base 1, a lens cover 2 mounted on the TO base 1, a gradient refractive index lens 5 mounted on the lens cover 2, a vertical metal component 7 mounted on the TO base 1, a thermoelectric cooler 8 mounted on one side of the vertical metal component 7, a semiconductor optical amplifier 6 mounted on the thermoelectric cooler 8, an avalanche light detector 4 mounted on the bottom side of the thermoelectric cooler 8, the lens cover 2 covering the top surface of the TO base 1, a through slot opened on the lens cover 2, the gradient refractive index lens 5 installed in the through slot, and a hyperbolic lens 9 installed between the inner walls of the lens cover 2.

[0023] Furthermore, the vertical metal component 7 is installed on the top surface of the TO base 1. One side of the vertical metal component 7 is arc-shaped, and the thermoelectric cooler 8 is installed on the other side of the vertical metal component 7. A gap is left between the thermoelectric cooler 8 and the TO base 1. The semiconductor optical amplifier 6 is installed on the front side of the thermoelectric cooler 8, which can effectively amplify the optical signal, reduce noise, improve the signal amplification capability and stability of the system, and reduce the distortion rate.

[0024] In this embodiment, the avalanche light detector 4 is installed at the center of the TO base 1, which can maintain high sensitivity over a wide spectral range and enhance its application range. Multiple pins 3 are arranged on the outer side of the avalanche light detector 4, and the bottom of the pins 3 extends through to the bottom side of the TO base 1.

[0025] Implementation steps:

[0026] 1. Design and fabrication of semiconductor optical amplifier 6: Employing a multi-quantum-well structure and optimized waveguide design, stable gain is ensured across a wide spectral range. Semiconductor optical amplifier 6 utilizes high-quality materials and advanced manufacturing processes to ensure high gain and low noise.

[0027] 2. Design and Manufacturing of APD Avalanche Photodetector 4: High-quality materials were selected, and the design and manufacturing process were optimized to ensure high responsivity over a wide spectral range. The avalanche photodetector 4 employs a high-gain structure to ensure consistent high sensitivity across different spectral ranges.

[0028] 3. Co-package design: The SOA semiconductor optical amplifier 6 and the APD avalanche photodetector 4 TIA are co-packaged in a single module. Optimized component layout and thermal management design ensure system stability and reliability under high-power optical signals.

[0029] 4. System Integration and Testing: Integrate the packaged modules into the optical detection system and conduct comprehensive testing. Testing includes sensitivity testing across different spectral ranges, signal amplification capability testing, and system stability testing. These tests verify the overall system performance and the effectiveness of any improvements.

[0030] Compared with the Chinese patent with patent publication number CN118882817A, this solution combines the cap with the semiconductor optical amplifier 6 and directly couples it to the avalanche light detector 4, so that the intensity of the light amplified by the semiconductor optical amplifier 6 is introduced into the avalanche light detector 4 to further enhance the resolution.

[0031] The contents not described in detail in this specification are existing technologies known to those skilled in the art.

[0032] All standard parts used in this utility model can be purchased from the market, and irregular parts can be customized according to the description and drawings. The specific connection methods of each part adopt conventional methods such as bolts, rivets, and welding that are mature in the prior art. The machinery, parts and equipment adopt conventional models in the prior art, and the circuit connection adopts conventional connection methods in the prior art, which will not be described in detail here.

[0033] The above description is only a preferred embodiment of the present utility model, but the protection scope of the present utility model is not limited thereto. Any equivalent substitutions or changes made by those skilled in the art within the technical scope disclosed in the present utility model, based on the technical solution and the inventive concept of the present utility model, should be included within the protection scope of the present utility model.

Claims

1. A TO packaging structure for a high-sensitivity broadband APD and SOA photodetector, characterized in that, include: TO base (1), a lens cover (2) is installed on the TO base (1), a gradient refractive index lens (5) is provided on the lens cover (2), a vertical metal component (7) is installed on the TO base (1), a thermoelectric cooler (8) is provided on one side of the vertical metal component (7), a semiconductor optical amplifier (6) is installed on the thermoelectric cooler (8), and an avalanche light detector (4) is provided on the bottom side of the thermoelectric cooler (8).

2. The TO packaging structure of the high-sensitivity broadband APD and SOA photodetector according to claim 1, characterized in that, The lens cap (2) is placed on the top surface of the TO base (1). A through groove is provided on the lens cap (2). The gradient refractive index lens (5) is installed in the through groove. A bicurvature lens (9) is installed between the inner walls of the lens cap (2).

3. The TO packaging structure for the high-sensitivity broadband APD and SOA photodetector according to claim 2, characterized in that, The vertical metal component (7) is mounted on the top surface of the TO base (1). One side of the vertical metal component (7) is arc-shaped. The thermoelectric cooler (8) is mounted on the other side of the vertical metal component (7). There is a gap between the thermoelectric cooler (8) and the TO base (1). The semiconductor optical amplifier (6) is mounted on the front side of the thermoelectric cooler (8).

4. The TO packaging structure of the high-sensitivity broadband APD and SOA photodetector according to claim 3, characterized in that, The avalanche light detector (4) is installed at the center of the TO base (1). Multiple pins (3) are arranged on the outer side of the avalanche light detector (4), and the bottom end of the pins (3) extends through to the bottom side of the TO base (1).

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