Pressure stabilizing structure for epitaxial tail gas treatment and production equipment
By designing a pressure-stabilizing structure for exhaust gas treatment, using nitrogen to dilute hydrogen concentration and optimizing pipeline structure, the problems of pressure fluctuations and pipeline blockages caused by sudden changes in hydrogen concentration in the exhaust gas were solved, thereby improving system stability and product quality.
Patent Information
- Application Number
- CN202520771052.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-04-22
- Publication Date
- 2026-02-13
- Estimated Expiration
- 2035-04-22
AI Technical Summary
In semiconductor manufacturing, sudden changes in hydrogen concentration in the exhaust gas can cause system pressure fluctuations and particulate matter generation, as well as blockages caused by crystallization and liquid accumulation in the exhaust gas pipeline, affecting the stability of the process chamber and the product qualification rate.
Design a pressure stabilizing structure for treating extended tail gas, including a main pipe, a secondary pipe and a branch pipe. By displaced and inclined configuration, nitrogen purging is used to dilute the hydrogen concentration, the pipeline structure is optimized to prevent crystallization and liquid accumulation, and the gas flow is ensured to be unidirectional.
It achieves stable system pressure, avoids combustion and explosion, reduces particle generation, improves product quality, supports rapid switching of high-flow-rate gas, reduces energy consumption, and improves production efficiency.
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Figure CN223909088U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The application belongs to the technical field of epitaxial wafer processing gas switching, in particular to an epitaxial tail gas treatment pressure stabilizing structure and a production equipment provided with the same. BACKGROUND
[0002] In the semiconductor production process, the atmospheric pressure epitaxial process needs to frequently switch the process gas (such as hydrogen). The switching of the large flow gas will cause the hydrogen concentration in the tail gas to suddenly change, causing a violent chemical reaction and causing the system pressure to fluctuate. Such pressure fluctuation not only affects the stability of the process chamber, but also causes the generation of particulate matter, reducing the product pass rate. In addition, the crystallization and liquid accumulation in the tail gas may block the pipeline, which will further exacerbate the instability of the equipment. Therefore, there is an urgent need for a pressure stabilizing structure that can stabilize the system pressure, prevent combustion and explosion, and optimize the tail gas treatment. SUMMARY
[0003] The application provides an epitaxial tail gas treatment pressure stabilizing structure and a production equipment, which solves the problems of pressure fluctuation caused by sudden change of hydrogen concentration during tail gas treatment in the prior art, and blockage caused by crystallization and liquid accumulation in the tail gas pipeline.
[0004] To solve at least one of the above technical problems, the technical solution adopted by the application is:
[0005] An epitaxial tail gas treatment pressure stabilizing structure, comprising a main pipeline for tail gas treatment, a plurality of auxiliary pipelines for gas purging, and a plurality of branch pipelines for gas drainage, wherein one of the auxiliary pipelines directly communicates with the main pipeline, the other auxiliary pipelines and the branch pipelines all communicate with the main pipeline through the auxiliary pipe, and all the auxiliary pipelines and the branch pipes are configured in different positions;
[0006] Along the gas flow direction of the main pipeline, all the auxiliary pipelines are inclined relative to the main pipeline, and all the branch pipelines are parallel relative to the main pipeline.
[0007] Further, all the branch pipelines are configured on the auxiliary pipe;
[0008] Along the gas flow direction of the auxiliary pipe, all the branch pipelines are inclined relative to the auxiliary pipe;
[0009] The auxiliary pipeline communicating with the auxiliary pipe is arranged at the suspended end of the auxiliary pipe.
[0010] Further, the main pipeline, the auxiliary pipe, all the auxiliary pipelines and the branch pipelines are straight pipes and are on the same plane;
[0011] The auxiliary pipeline has two, which are arranged on both sides of the main pipeline;
[0012] Further, along the gas flow direction of the main pipe, the auxiliary pipe is located below another of the sub-pipes not connected thereto.
[0013] Further, the straight-line distance between the intersection of the sub-pipe and the main pipe and the intersection of the auxiliary pipe and the main pipe is 15-20 cm.
[0014] Further, the included angle between all the sub-pipes and the main pipe is the same as the included angle between all the branch pipes and the auxiliary pipe, both being 30-45°.
[0015] Further, the length of the auxiliary pipe is 40-50 cm; in the gas flow direction of the auxiliary pipe, the straight-line distance from the branch pipe on the side close to the main pipe to the main pipe is 10-20 cm, and the straight-line distance between the two branch pipes is 5-10 cm.
[0016] Further, the diameter of the auxiliary pipe is greater than the diameters of the sub-pipes and the branch pipes and less than the diameter of the main pipe; the diameter of the sub-pipe is less than the diameter of the branch pipe.
[0017] Further, the main pipe is a DN50 pipe; the branch pipe is a DN8 pipe; the sub-pipe is a DN15 pipe; and the auxiliary pipe is a DN25 pipe.
[0018] A production device provided with the pressure stabilizing structure described above.
[0019] The pressure stabilizing structure for epitaxial tail gas treatment designed in the application has simple structure and stable pressure, can dilute hydrogen concentration by purging nitrogen gas to avoid combustion and explosion, and can maintain stable system pressure; optimization of pipeline structure and height difference can effectively prevent crystallization and liquid accumulation of tail gas in the main pipe and prevent blockage; at the same time, it can also reduce the generation of process cavity particles, improve the product quality of epitaxial wafers, and improve the pass rate; it can also support rapid switching of large flow gas, reduce process time, reduce energy consumption, and be energy-efficient. It also proposes a production device provided with the pressure stabilizing structure. BRIEF DESCRIPTION OF DRAWINGS
[0020] Figure 1 is a schematic view of a pressure stabilizing structure for epitaxial tail gas treatment in the application.
[0021] In the figure:
[0022] 10, main pipe 20, auxiliary pipe 30, sub-pipe one
[0023] 40, sub-pipe two 50, branch pipe one 60, branch pipe two DETAILED DESCRIPTION
[0024] The application will be described in detail below with reference to the accompanying drawings and specific embodiments.
[0025] The embodiment provides a pressure stabilizing structure for epitaxial tail gas treatment. Figure 1 As shown in the figure, the pressure stabilizing structure comprises a main pipeline 10 for tail gas treatment, a secondary pipeline I 30 and a secondary pipeline II 40 for gas purging, and a branch pipeline I 50 and a branch pipeline II 60 for gas flow, wherein the secondary pipeline I 30 is directly communicated with the main pipeline 10, the secondary pipeline II 40, the branch pipeline I 50 and the branch pipeline II 60 are all communicated with the main pipeline 10 through an auxiliary pipeline 20, and the secondary pipeline I 30, the secondary pipeline II 40, the branch pipeline I 50 and the branch pipeline II 60 are all arranged at different positions on the main pipeline 10 or the auxiliary pipeline 20. Along the gas flow direction of the main pipeline 10, the secondary pipeline I 30 and the secondary pipeline II 40 are both arranged to be inclined relative to the main pipeline 10, and the branch pipeline I 50 and the branch pipeline II 60 are both arranged to be parallel relative to the main pipeline 10.
[0026] In the embodiment, one-way valves (not shown in the figure) are arranged on the main pipeline 10, the secondary pipeline I 30, the secondary pipeline II 40, the branch pipeline I 50 and the branch pipeline II 60, so as to prevent gas backflow and ensure one-way gas flow. Figure 1 All the dashed arrows are the directions of gas flow in the corresponding pipelines. The main pipeline 10 is a process gas pipeline, and the process gas includes H2, TCS, HCL, PH3 / B2H6, but mainly hydrogen. The main pipeline 10, the auxiliary pipeline 20, the secondary pipeline I 30, the secondary pipeline II 40, the branch pipeline I 50 and the branch pipeline II 60 are all straight pipes and are arranged on the same plane, so that the straight pipes can maximize the gas flow capacity. The two secondary pipelines are arranged on the two sides of the main pipeline 10 and are both inclined downward to blow gas into the main pipeline 10.
[0027] Preferably, the included angle θ between the secondary pipeline I 30 and the main pipeline 10 is the same as the included angle θ between the auxiliary pipeline 20 and the main pipeline 20, and both are 30-45°. The included angle θ can be 30°, 35°, 40° or 45°. Of course, the included angle θ can also be any angle between 30° and 45°. The angle can prevent the gas flowing from the secondary pipeline I 30 and the secondary pipeline II 40 into the main pipeline 10 from appearing turbulence at the connection intersection, and the turbulence is not conducive to gas flow.
[0028] The auxiliary pipeline 30 is directly communicated with the main pipeline 10, and the auxiliary pipeline 40 is arranged at the suspended end of the auxiliary pipeline 20. In the gas flow direction along the main pipeline 10, the auxiliary pipeline 20 is below the auxiliary pipeline 30. The structure of blowing from both sides can not only increase the hydrogen flow and improve the purging effect, but also dilute the hydrogen concentration in the main pipeline 10 to avoid combustion and explosion, and can also stabilize the pressure of the growth chamber at the end of the main equipment to reduce the pressure fluctuation. The auxiliary pipeline 30 and the auxiliary pipeline 40 can be switched to large-flow hydrogen, which can not only optimize the chamber particle condition, but also switch to large-flow to reduce unnecessary exhaust time, reduce energy waste, increase equipment production rhythm, and reduce energy loss.
[0029] Preferably, the straight line distance L1 between the intersection point of the auxiliary pipeline 30 and the main pipeline 10 and the intersection point of the auxiliary pipeline 20 and the main pipeline 10 is 15-20 cm. If the distance L1 is less than 15 cm, turbulence will occur at the intersection point; if the distance L1 is greater than 20 cm, the purging purpose can be achieved, but too long will increase the length of the main pipeline, thereby increasing the nitrogen purging path and wasting nitrogen flow. In the embodiment, the value of the straight line distance L1 is selected as 15 cm, 20 cm, and any value between the two endpoints.
[0030] Further, the auxiliary pipeline 30 and the auxiliary pipeline 40 mainly introduce nitrogen gas for purging, because it is continuously blowing to the main pipeline 10, and it is continuously purging in the whole production process, so the pipe diameter is small, and the pipe diameter is 1 / 4 inch pipe, that is, the commonly used nominal outer diameter DN8 pipe. The purging nitrogen can not only dilute the hydrogen concentration to avoid combustion, but also effectively maintain the system pressure stable. In the whole purging process, the pressure of the continuously purging nitrogen is 0.5 Mpa, and the flow is set to 40-60 slm.
[0031] Further, the branch pipeline 50 and the branch pipeline 60 are arranged on the auxiliary pipeline 20, and the branch pipeline 50 and the branch pipeline 60 are arranged on the auxiliary pipeline 20 relative to the auxiliary pipeline 20. The branch pipeline 50 and the branch pipeline 60 are arranged on the auxiliary pipeline 20 relative to the auxiliary pipeline 20.
[0032] Further, the branch pipeline 50 and the branch pipeline 60 are arranged on the auxiliary pipeline 20 relative to the auxiliary pipeline 20. The branch pipeline 50 and the branch pipeline 60 are arranged on the auxiliary pipeline 20 relative to the auxiliary pipeline 20.
[0033] Preferably, the length L2 of the auxiliary pipe 20 is 40-50 cm, and the linear distance L3 from the branch pipe 50 to the main pipe 10 on the side close to the main pipe 10 in the gas flow direction of the auxiliary pipe 10 is 10-20 cm, and the linear distance L4 between the branch pipe 50 and the branch pipe 60 is 5-10 cm.
[0034] In the embodiment, the branch pipe 50 and the branch pipe 60 are both gas pre-flow pipes, wherein the branch pipe 50 is used for passing mixed gas composed of PH3, HCL and N2, mainly PH3 gas; these are all main process gas pre-flow purge gas, in order to ensure the stability of the gas pressure flowing to the branch pipe 50. The branch pipe 60 is used for passing mixed gas composed of TCS and N2, mainly TCS gas; these are all Bubbler vent gas; when the internal pressure of the TCS Bubbler reaches the set value, the gas is discharged from the pipeline, and N2 acts as a protective gas. The design of the branch pipe 50 and the branch pipe 60 arranged obliquely and the height difference between the branch pipe 50 and the branch pipe 60 can effectively prevent liquid accumulation from blocking.
[0035] In work, the branch pipe 50 and the branch pipe 60 are always continuously passed through the purge nitrogen; wherein the purge gas in the branch pipe 50 and the branch pipe 60 flows earlier than the tail gas in the main pipe 10. After the purge gas in the branch pipe 50 and the branch pipe 60 flows through, the branch pipe 50 and the branch pipe 60 are closed. Then the valve on the main pipe 10 is opened, and the epitaxial tail gas treatment is started. The main pipe 10 is connected to the water-washing type spray scrubbing tower through the inner pipe with slope, and finally connected to the combustion type tail gas treatment device (omitted in the drawing), to ensure the stability of the tail gas combustion.
[0036] Further, the diameter of the auxiliary pipe 20 is greater than the diameter of the branch pipe and the branch pipe, and less than the diameter of the main pipe 10; the diameter of the branch pipe is less than the diameter of the branch pipe. Specifically, the main pipe 10 is a DN50 pipe; the branch pipe 20 is a DN15 pipe; the branch pipe 50 and the branch pipe 60 are both DN25 pipes.
[0037] A production equipment is provided with the pressure stabilizing structure as described above.
[0038] The pressure stabilizing structure for epitaxial tail gas treatment designed in the application has simple structure and stable pressure, hydrogen concentration can be diluted by purging nitrogen to avoid combustion and explosion, and the system pressure can be kept stable; the optimization of pipeline structure and height difference can effectively prevent tail gas from crystallizing and accumulating in the main pipeline to prevent blockage; at the same time, it can also reduce the generation of process cavity particles, improve the product quality of epitaxial wafers, and improve the qualified rate; it can also support large flow gas rapid switching, reduce process time, reduce energy consumption, and be energy efficient. It also proposes a production equipment provided with the pressure stabilizing structure.
[0039] The above detailed description of the embodiments of the application is only a preferred embodiment of the application, and cannot be considered as limiting the scope of the application. Any equivalent changes and improvements made within the scope of the application should still belong to the patent coverage of the application.
Claims
1. A pressure stabilizing structure for epitaxial tail gas treatment, characterized by, The main pipe for tail gas treatment, several auxiliary pipes for gas purging, and several branch pipes for gas drainage, wherein one of the auxiliary pipes is directly communicated with the main pipe, the other auxiliary pipes and the branch pipes are communicated with the main pipe through an auxiliary pipe, and all the auxiliary pipes and the branch pipes are arranged in different positions from each other; All the auxiliary pipes are arranged obliquely relative to the main pipe along the gas flow direction of the main pipe, and all the branch pipes are arranged in parallel relative to the main pipe.
2. The pressure stabilizing structure for epitaxial tail gas treatment according to claim 1, wherein All the branch pipes are arranged on the auxiliary pipe; All the branch pipes are arranged obliquely relative to the auxiliary pipe along the gas flow direction of the auxiliary pipe. The auxiliary pipe is arranged at the suspended end of the auxiliary pipe.
3. The pressure stabilizing structure for epitaxial tail gas treatment according to claim 1 or 2, characterized in that, The main pipe, the auxiliary pipe, all the auxiliary pipes and the branch pipes are straight pipes and are in the same plane. There are two auxiliary pipes which are arranged on the two sides of the main pipe.
4. The pressure stabilizing structure for epitaxial tail gas treatment according to claim 3, wherein The auxiliary pipe is located below the other auxiliary pipe which is not connected to the auxiliary pipe along the gas flow direction of the main pipe.
5. The pressure stabilizing structure for epitaxial tail gas treatment according to claim 3, wherein The straight line distance between the intersection point of the auxiliary pipe and the main pipe and the intersection point of the auxiliary pipe and the main pipe is 15-20 cm.
6. The pressure stabilizing structure for epitaxial tail gas treatment according to claim 4 or 5, wherein The included angle between all the auxiliary pipes and the main pipe is the same as the included angle between all the branch pipes and the auxiliary pipe, and is 30-45°.
7. The pressure stabilizing structure for epitaxial tail gas treatment according to claim 6, wherein The length of the auxiliary pipe is 40-50 cm; the straight line distance between the branch pipe close to the main pipe and the main pipe along the gas flow direction of the auxiliary pipe is 10-20 cm, and the straight line distance between the two branch pipes is 5-10 cm.
8. The pressure stabilizing structure for epitaxial tail gas treatment according to any one of claims 1-2, 4-5, 7, wherein The diameter of the auxiliary pipe is larger than the diameter of the auxiliary pipe and the branch pipe, and is smaller than the diameter of the main pipe; the diameter of the auxiliary pipe is smaller than the diameter of the branch pipe.
9. The pressure stabilizing structure for epitaxial tail gas treatment according to claim 8, wherein The main pipe is a DN50 pipe; the branch pipe is a DN8 pipe; the auxiliary pipe is a DN15 pipe; and the auxiliary pipe is a DN25 pipe.
10. A production apparatus characterized by comprising: The pressure stabilizing structure according to any one of claims 1-9 is provided.