Bearing structure and etching equipment
By employing a carrier disk and pressure ring design in the dry etching equipment, the gap problem caused by the electrode plate groove is solved, ensuring the stability of the etching rate, reducing maintenance costs, and extending the service life of the equipment.
Patent Information
- Application Number
- CN202520097462.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-15
- Publication Date
- 2026-02-17
- Estimated Expiration
- 2035-01-15
AI Technical Summary
In existing dry etching equipment, grooves are generated on the lower electrode during use, which increases the gap between the electrode plate and the carrier disk, affecting the stability of the etching rate. Furthermore, frequent replacement or polishing is costly.
A support structure was designed, including a carrier disk and a pressure ring. The carrier disk has an annular stepped groove, and the inner diameter of the pressure ring is larger than the inner diameter of the stepped groove. It can be inserted into the etched groove of the electrode plate to fill the gap, ensure that the electrode plate fits the carrier disk, and reduce the wear and replacement of the electrode plate.
By bonding the carrier disk to the electrode plate, the flow rate of the cold medium is kept stable, the etching rate fluctuation is avoided, the maintenance cost of the electrode plate is reduced, and the service life of the equipment is extended.
Smart Images
Figure CN223927351U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of semiconductor processing technology, and in particular to a support structure and etching equipment. Background Technology
[0002] In the semiconductor chip manufacturing process, dry etching equipment is typically used for etching. However, the lower electrode in existing dry etching equipment develops grooves over time, requiring re-polishing or replacement of the electrode, which incurs high costs. Utility Model Content
[0003] This application provides a support structure and etching equipment to reduce the number of times the electrode plate needs to be polished and replaced.
[0004] This application provides a load-bearing structure, including:
[0005] Electrode plates;
[0006] A carrier disk is disposed on the electrode plate, and an annular stepped groove is formed on one edge of the carrier disk facing the electrode plate;
[0007] A pressure ring is pressed against the side of the carrier disk away from the electrode plate, and the inner diameter R1 of the pressure ring is greater than or equal to the inner diameter R2 of the stepped groove.
[0008] In some possible implementations, the inner diameter R1 of the pressure ring and the inner diameter R2 of the stepped groove satisfy the condition that 3mm ≤ (R1-R2) ≤ 5mm.
[0009] In some possible implementations, the stepped groove has a depth H extending along the axial direction of the carrier disk, wherein 15 mm ≤ H ≤ 20 mm.
[0010] In some possible implementations, the stepped groove has a width M extending radially along the carrier disk, wherein 5 mm ≤ M ≤ 10 mm.
[0011] In some possible implementations, the electrode plate has cooling channels that open to one end facing the carrier disk and communicate with the outside through the gap between the carrier disk and the electrode plate.
[0012] In some possible implementations, the side of the carrier disk opposite to the electrode plate has a limiting groove for limiting the workpiece.
[0013] In some possible implementations, the support structure further includes an elastic element that acts on the pressure ring and drives the pressure ring to move toward the electrode plate.
[0014] In some possible implementations, the bearing structure further includes a connecting rod that passes through the pressure ring along the axial direction of the carrier plate. One end of the connecting rod is fixed relative to the electrode plate, and a limiting edge protrudes from the peripheral side of the end of the connecting rod away from the electrode plate. The limiting edge is located on the side of the pressure ring away from the electrode plate, and the limiting edge is spaced apart from the side of the pressure ring away from the electrode plate.
[0015] The elastic element is sleeved on the connecting rod. One end of the elastic element abuts against the side of the pressure ring away from the electrode plate, and the other end of the elastic element away from the pressure ring abuts against the side of the limiting edge facing the pressure ring. When the pressure ring directly abuts against the electrode plate and is not subjected to external force, the elastic element is in a naturally elongated state or a compressed state.
[0016] In some possible implementations, the surface roughness of the electrode plate facing the carrier disk is 1.0 μm to 2.0 μm;
[0017] The surface roughness of the carrier disk facing the electrode plate is 0.5 μm to 1.0 μm.
[0018] In addition, this application also provides an etching apparatus, including the support structure described in the above embodiments.
[0019] The beneficial effects of this application are as follows: In the support structure provided by this application, when the electrode plate is etched with etching grooves due to the self-cleaning of the etching equipment on the side facing the carrier plate, the end of the carrier plate facing the electrode plate can be inserted into the etching grooves to fill them, thus ensuring that the carrier plate and the electrode plate are in close contact. This solves the problem of excessive gaps between the electrode plate and the carrier plate caused by etching grooves, maintains a stable flow rate of the cold medium, and avoids interference with the process (e.g., etching process) caused by changes in helium flow due to electrode plate etching, ensuring the stability of the etching rate. Simultaneously, it reduces the frequency of electrode plate re-polishing and replacement, reducing costs and saving significant equipment maintenance expenses. Attached Figure Description
[0020] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.
[0021] Figure 1 Partial cross-sectional structural schematic diagrams of the load-bearing structure in some embodiments are shown;
[0022] Figure 2Dimensional diagrams of the load-bearing structure in some embodiments are shown;
[0023] Figure 3 A cross-sectional structural diagram of the load-bearing structure after use is shown in some embodiments;
[0024] Figure 4 A schematic cross-sectional view of the load-bearing structure after use is shown in some embodiments;
[0025] Figure 5 Cross-sectional structural diagrams of the load-bearing structure in some embodiments are shown.
[0026] Explanation of key component symbols:
[0027] 1000 - Load-bearing structure;
[0028] 100 - Electrode plate; 110 - Cooling channel; 120 - Etched groove;
[0029] 200-Carrier tray; 210-Step groove; 220-Carrier tray body; 221-Overlapping part; 230-Boss; 240-Limiting groove;
[0030] 300-Pressure ring;
[0031] 410 - Elastic element; 420 - Connecting rod; 421 - Limiting edge;
[0032] L - Central axis. Detailed Implementation
[0033] The embodiments of this application are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this application, and should not be construed as limiting this application.
[0034] In the description of this application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicating the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.
[0035] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this application, "multiple" means two or more, unless otherwise explicitly specified.
[0036] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.
[0037] In this application, unless otherwise expressly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.
[0038] like Figures 2 to 4 As shown, dry etching equipment using a retaining ring 300 is commonly used in semiconductor chip manufacturing. Due to process requirements, the dry etching equipment needs frequent self-cleaning. During cleaning, the retaining ring 300 directly presses against the electrode plate 100, and the portion of the electrode plate 100 exposed relative to the retaining ring 300 is etched. With each self-cleaning cycle, an etching groove 120, equal in diameter to the inner diameter of the retaining ring 300, forms on the side of the electrode plate 100 facing the retaining ring 300. During semiconductor chip manufacturing, the presence of the etching groove 120 leads to a larger gap between the carrier disk 200 and the electrode plate 100, increasing the flow rate of the cold medium and causing unstable etching rates. Related technologies typically involve replacing or re-polishing the electrode plate 100 to eliminate the etching groove 120, but this method is costly and increases production costs for manufacturers.
[0039] like Figures 1 to 4As shown in the embodiment of this application, a support structure 1000 is provided, which can be applied to etching equipment in the semiconductor chip processing process. It solves the problem of the electrode plate 100 and the carrier disk 200 adhering together, while reducing cost investment.
[0040] In some embodiments, the support structure 1000 may include an electrode plate 100, a carrier disk 200, and a pressure ring 300.
[0041] The carrier disk 200 can be disposed on the electrode plate 100. An annular stepped groove 210 is formed on the side of the carrier disk 200 facing the electrode plate 100. The stepped groove 210 can be disposed around the edge of the carrier disk 200, that is, the stepped groove 210 can be disposed around the edge of the carrier disk 200. In some embodiments, both the side of the stepped groove 210 facing the electrode plate 100 and the periphery of the stepped groove 210 can be open. In some embodiments, both the carrier disk 200 and the electrode plate 100 are circular plate structures, and the stepped groove 210 can also be annular.
[0042] During use, the workpiece can be placed on the side of the carrier 200 away from the electrode plate 100. The workpiece can be materials used for processing semiconductor chips, etc.
[0043] In this embodiment, the pressure ring 300 can press against the side of the carrier plate 200 facing away from the electrode plate 100. It is understood that the pressure ring 300 has a ring-shaped structure. In this embodiment, the inner diameter R1 of the pressure ring 300 can be larger than the inner diameter R2 of the stepped groove 210. When an etching groove 120 appears on the side of the electrode plate 100 facing the carrier plate 200 due to the self-cleaning of the etching equipment, it can ensure that the end of the carrier plate 200 facing the electrode plate 100 can be smoothly inserted into the etching groove 120 to fill the etching groove 120.
[0044] Therefore, when the electrode plate 100 is etched with etching grooves 120 due to the self-cleaning process of the etching equipment on the side facing the carrier 200, the end of the carrier 200 facing the electrode plate 100 can be inserted into the etching grooves 120 to fill them, thus ensuring that the carrier 200 and the electrode plate 100 are in contact. This solves the problem of excessive gaps between the electrode plate 100 and the carrier 200 caused by the etching grooves 120, maintaining a stable flow rate of the cold medium and preventing interference from helium flow variations caused by the etching of the electrode plate 100 on the process (e.g., the etching process), ensuring the stability of the etching rate. Simultaneously, it reduces the frequency of re-polishing and replacement of the electrode plate 100, reducing costs and saving significant equipment maintenance expenses.
[0045] like Figure 1 and Figure 2As shown, in some embodiments, the carrier disk 200 may include a carrier disk body 220 and a boss 230 located on the side of the carrier disk body 220 facing the electrode plate 100. A stepped groove 210 may be formed on the periphery of the boss 230. Correspondingly, the periphery of the carrier disk body 220 may protrude radially relative to the periphery of the boss 230 along the radial direction of the carrier disk 200, forming an annular overlap 221. The inner diameter R2 of the stepped groove 210 may be the same as the outer diameter of the boss 230. The radial direction of the carrier disk 200 may refer to any direction perpendicular to the central axis L of the carrier disk 200.
[0046] In some embodiments, the inner diameter R1 of the pressure ring 300 and the inner diameter R2 of the stepped groove 210 can satisfy 3mm ≤ (R1-R2) ≤ 5mm. On the one hand, this ensures that the boss 230 can be smoothly inserted into the etched groove 120 formed on the electrode plate 100. On the other hand, it also prevents the overlap portion 221 from being too large in the radial direction of the carrier plate 200, thus avoiding damage to the overlap portion 221 by the pressure ring 300 when it is suspended relative to the electrode plate 100. For example, the inner diameter R1 of the pressure ring 300 can be 3mm, 3.3mm, 3.5mm, 3.8mm, 4mm, 4.2mm, 4.6mm, 5mm, or any other value from 3mm to 5mm larger than the inner diameter R2 of the stepped groove 210.
[0047] In other embodiments, the inner diameter R1 of the pressure ring 300 may also be equal to the inner diameter R2 of the stepped groove 210.
[0048] In some embodiments, the stepped groove 210 may have a depth H extending axially along the carrier disk 200. The axial direction of the carrier disk 200 may refer to the direction of extension of the central axis L of the carrier disk 200. In an embodiment, the depth H of the stepped groove 210 may be set to 15mm ≤ H ≤ 20mm. Thus, while ensuring sufficient support strength for the overlapping portion 221, the stepped groove 210 can have a greater depth, allowing the boss 230 to fill deeper etched grooves 120 on the electrode plate 100, reducing the number of polishing and replacement cycles during the use of the electrode plate 100, extending the service life of the electrode plate 100, and thereby reducing investment costs. Exemplarily, the depth H of the stepped groove 210 may be set to 15mm, 15.5mm, 16mm, 16.3mm, 16.8mm, 17mm, 17.5mm, 18mm, 18.2mm, 18.7mm, 19.2mm, 19.5mm, 20mm, or any other value from 15mm to 20mm.
[0049] In some embodiments, the stepped groove 210 further has a width M extending radially along the carrier plate 200, wherein 5mm ≤ M ≤ 10mm. On the one hand, when the boss 230 is inserted into the etched groove 120 on the electrode plate 100, the overlapping portion 221 can smoothly abut against the side of the electrode plate 100 facing the pressure ring 300. On the other hand, it can also prevent the overlapping portion 221 from being crushed when suspended due to excessively large dimensions along the radial direction of the carrier plate 200. Exemplarily, the radial extension width M of the stepped groove 210 along the carrier plate 200 can be set to 5mm, 5.5mm, 6mm, 6.2mm, 6.5mm, 7mm, 7.4mm, 7.8mm, 8.5mm, 9mm, 9.6mm, 10mm or any other value from 5mm to 10mm.
[0050] like Figure 1 As shown, in some embodiments, a limiting groove 240 is also formed on the side of the carrier disk 200 opposite to the electrode plate 100. During use, the workpiece can be placed in the limiting groove 240, and the workpiece can be in contact with the inner wall of the limiting groove 240. Thus, the workpiece can be restricted from moving freely along the radial direction of the carrier disk 200, so as to ensure etching accuracy.
[0051] like Figure 1 As shown, in some embodiments, the electrode plate 100 is further provided with a cooling channel 110 extending axially along the carrier plate 200. The cooling channel 110 can penetrate the electrode plate 100, and its two ends can be connected to the opposite sides of the electrode plate 100. During use, the end of the cooling channel 110 facing the carrier plate 200 can be connected to the outside through the gap between the carrier plate 200 and the electrode plate 100. The end of the cooling channel 110 away from the carrier plate 200 can be used to connect to a cold source, such as a liquid helium source. Accordingly, the cold source can continuously supply a cooling medium (e.g., liquid helium) to the carrier plate 200 through the cooling channel 110. The cooling medium can enter the gap between the carrier plate 200 and the electrode plate 100 and exchange heat with the carrier plate 200. The heat in the workpiece can be transferred to the carrier plate 200 and carried away by the cooling medium. The cooled medium after heat exchange can diffuse to the outside through the gap between the carrier disk 200 and the electrode plate 100. Here, the outside can refer to the vacuum chamber of the etching equipment.
[0052] In some embodiments, the surface roughness of the electrode plate 100 facing the carrier disk 200 can be set to 1.0 μm to 2.0 μm. The surface roughness of the carrier disk 200 facing the electrode plate 100 can be set to 0.5 μm to 1.0 μm. Thus, while achieving good electrical contact between the electrode plate 100 and the carrier disk 200, it ensures that the cooling medium can smoothly pass through the bonding gap between the electrode plate 100 and the carrier disk 200 during processing. Exemplarily, the surface roughness of the electrode plate 100 facing the carrier disk 200 can be set to any other value among 1.0 μm, 1.2 μm, 1.35 μm, 1.5 μm, 1.6 μm, 1.75 μm, 1.9 μm, 2.0 μm, or 1.0 μm to 2.0 μm. The surface roughness of the carrier disk 200 facing the electrode plate 100 can be set to 0.5μm, 0.55μm, 0.6μm, 0.67μm, 0.7μm, 0.75μm, 0.88μm, 0.95μm, 1.0μm or any other value from 0.5μm to 1.0μm.
[0053] like Figure 1 and Figure 5 As shown, the supporting structure 1000 also includes an elastic element 410. The elastic element 410 can act on the pressure ring 300. In the embodiment, the elastic element 410 can be used to drive the pressure ring 300 to move toward the electrode plate 100.
[0054] In some embodiments, the supporting structure 1000 further includes a connecting rod 420. The connecting rod 420 can pass through the pressure ring 300. Specifically, the connecting rod 420 can pass through the pressure ring 300 along the axial direction of the carrier plate 200, and the axial direction of the connecting rod 420 can be parallel to the axial direction of the carrier plate 200. One end of the connecting rod 420 can be fixedly disposed relative to the electrode plate 100. In some embodiments, the connecting rod 420 can be fixedly connected to the electrode plate 100 by means of threaded connection or snap-fit, or connected to a structure such as a bracket for supporting the electrode plate 100.
[0055] A limiting edge 421 may protrude from the periphery of the end of the connecting rod 420 away from the electrode plate 100. The limiting edge 421 may be located on the side of the pressure ring 300 away from the electrode plate 100, and the limiting edge 421 may be spaced apart from the pressure ring 300. In the embodiment, an elastic member 410 may be sleeved on the periphery of the connecting rod 420 and located between the limiting edge 421 and the pressure ring 300. One end of the elastic member 410 may abut against the side of the limiting edge 421 facing the pressure ring 300, and the other end of the elastic member 410 may abut against the side of the pressure ring 300 away from the electrode plate 100. When the pressure ring 300 directly abuts against the electrode plate 100 and the pressure ring 300 is not subjected to external force, the elastic member 410 may be in a naturally extended state or a compressed state. Therefore, when the carrier plate 200 is placed between the pressure ring 300 and the electrode plate 100, the elastic element 410 can be in a compressed state, and the pressure ring 300 can press the carrier plate 200 onto the electrode plate 100, allowing the cold medium to pass smoothly through the bonding gap between the carrier plate 200 and the electrode plate 100.
[0056] In other embodiments, one end of the elastic element 410 may be fixedly connected to the electrode plate 100, and the other end of the elastic element 410 may be fixedly connected to the pressure ring 300. When the pressure ring 300 directly abuts against the electrode plate 100 and is not subjected to external force, the elastic element 410 may be in a naturally elongated state or a stretched state. When the carrier plate 200 is placed between the pressure ring 300 and the electrode plate 100, the elastic element 410 may be in a stretched state, which allows the pressure ring 300 to press the carrier plate 200 tightly onto the electrode plate 100.
[0057] like Figures 1 to 4 In the initial stage of use, the side of the electrode plate 100 facing the pressure ring 300 can be flat, and the end of the carrier plate 200 with the boss 230 can abut against the electrode plate 100. The overlapping part 221 can be suspended relative to the electrode plate 100. The workpiece can be placed in the limiting groove 240 on the side of the carrier plate 200 away from the electrode plate 100.
[0058] As usage time increases, etching grooves 120 will form on the side of the electrode plate 100 facing the pressure ring 300 due to the self-cleaning of the etching equipment. During etching, the boss 230 of the carrier disk 200 can be inserted into the etching grooves 120 to fill them, ensuring that the carrier disk 200 and the electrode plate 100 are in contact. This ensures the stability of the cold medium flow rate and, consequently, the stability of the etching rate. As the depth of the etching grooves 120 increases, the depth to which the boss 230 is inserted into the etching grooves 120 can also increase until the overlapping portion 221 abuts against the electrode plate 100.
[0059] The embodiment also provides an etching apparatus, which may include a vacuum chamber, a power supply, and a support structure 1000 provided in the embodiment. The support structure 1000 may be disposed in the vacuum chamber and may be electrically connected to the negative terminal of the power supply.
[0060] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.
[0061] Although embodiments of this application have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting this application. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of this application.
Claims
1. A load bearing structure, characterized by include: Electrode plates; A carrier disk is disposed on the electrode plate, and an annular stepped groove is formed on one edge of the carrier disk facing the electrode plate; A pressure ring is pressed against the side of the carrier disk away from the electrode plate, and the inner diameter R1 of the pressure ring is greater than or equal to the inner diameter R2 of the stepped groove.
2. The load-bearing structure according to claim 1, characterized in that, The inner diameter R1 of the pressure ring and the inner diameter R2 of the stepped groove satisfy the condition that 3mm ≤ (R1-R2) ≤ 5mm.
3. The load-bearing structure according to claim 1, characterized in that, The stepped groove has a depth H extending along the axial direction of the carrier disk, wherein 15mm≤H≤20mm.
4. The load-bearing structure according to claim 1, characterized in that, The stepped groove has a width M extending radially along the carrier disk, wherein 5mm ≤ M ≤ 10mm.
5. The load-bearing structure according to any one of claims 1 to 4, characterized in that, The electrode plate has a cooling channel, which opens to one end facing the carrier plate and communicates with the outside through the gap between the carrier plate and the electrode plate.
6. The load-bearing structure according to any one of claims 1 to 4, characterized in that, The carrier disk has a limiting groove on the side opposite to the electrode plate for limiting the workpiece.
7. The load-bearing structure according to any one of claims 1 to 4, characterized in that, The bearing structure also includes an elastic element that acts on the pressure ring and drives the pressure ring to move toward the electrode plate.
8. The load-bearing structure according to claim 7, characterized in that, The bearing structure further includes a connecting rod, which passes through the pressure ring along the axial direction of the carrier plate. One end of the connecting rod is fixed relative to the electrode plate. A limiting edge protrudes from the periphery of the end of the connecting rod away from the electrode plate. The limiting edge is located on the side of the pressure ring away from the electrode plate, and the limiting edge is spaced apart from the side of the pressure ring away from the electrode plate. The elastic element is sleeved on the connecting rod. One end of the elastic element abuts against the side of the pressure ring away from the electrode plate, and the other end of the elastic element away from the pressure ring abuts against the side of the limiting edge facing the pressure ring. When the pressure ring directly abuts against the electrode plate and is not subjected to external force, the elastic element is in a naturally elongated state or a compressed state.
9. The load-bearing structure according to claim 1, characterized in that, The surface roughness of the electrode plate facing the carrier disk is 1.0 μm to 2.0 μm; The surface roughness of the carrier disk facing the electrode plate is 0.5 μm to 1.0 μm.
10. An etching apparatus, characterized in that, Includes the load-bearing structure as described in any one of claims 1 to 9.