Linear three-level module circuit of RC absorption circuit with built-in inner tube CE
By incorporating an RC snubber circuit inside the IGBT module, the problem of excessive turn-off peak voltage of transistors T2 and T3 within the IGBT module is solved, achieving more efficient heat dissipation and wider application, while reducing system space requirements.
Patent Information
- Application Number
- CN202423050962.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-11
- Publication Date
- 2026-02-27
- Estimated Expiration
- 2034-12-11
AI Technical Summary
In the existing single-line three-level topology, the internal transistors T2 and T3 of the IGBT module have excessive turn-off peak voltages, and the existing solutions have limitations and reduced efficiency in practical applications.
Design a one-line three-level module circuit with an internal RC snubber circuit built into the IGBT module. The RC snubber circuit is built into the IGBT module and connected by bonding wires to reduce the voltage stress on the internal tube and improve heat dissipation performance.
This effectively reduces the voltage stress inside the IGBT module, improves the heat dissipation performance of the IGBT, enhances the versatility of the solution, and reduces the space requirements of the system.
Smart Images
Figure CN223957448U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model belongs to the electric power industry technical field relates to a one word type three level module circuit of RC absorption circuit's built -in CE of inner tube. BACKGROUND
[0002] In recent years along with the development of power electronics technology in the electric power industry, one word type three level topology (NPC1) has been widely applied in multiple industries, and its main industries include photovoltaic inverter, wind power converter and the like, which have wide applications. These application fields can benefit from the advantages of three level topology structure, such as lower harmonic content, higher efficiency, reduced electromagnetic interference, and lower voltage borne by a single device.
[0003] The typical topology of one word type three level, the whole inverter circuit is composed of 4 IGBTs and 6 diodes. The three level circuit is relatively complex in topology structure, and can output high, low and zero level through the turn-on of upper and lower tubes. In one word type three level topology application, there are short commutation loop and long commutation loop, as shown in Figure 1 As can be seen from Figure 1 , when T1 is turned off, the current flows through D5 to continue flowing, and the current path is changed from LOOP1 to LOOP2. At this time, the commutation loop is short, the stray inductance is small, and the turn-off voltage stress of T1 is small.
[0004] Comparative analysis of long commutation loop, as shown in Figure 2 As can be seen from Figure 2 , when T2 is turned off, the current flows through D3 and D4 to continue flowing, and the current path is changed from LOOP3 to LOOP4. Since the commutation loop is long, the loop stray inductance increases, resulting in a large turn-off peak voltage of T2, which causes the problem of internal tube overvoltage. Since the one word type three level topology is symmetrical, the same analysis can conclude that the internal tube T3 will also have the problem of large turn-off peak voltage caused by the long commutation loop.
[0005] In practical application, the problem of large turn-off stress of internal tubes T2 and T3 is more prominent. The IGBT voltage stress problem of such modules can be solved by optimizing the external wiring of IGBT module and adjusting the IGBT drive resistance. Based on the adjustment of drive resistance, the loss increases and the system efficiency decreases.
[0006] In order to reduce the large turn-off stress of internal tube, RC absorption circuit can also be added between the two ends of IGBT CE to improve it. Since not every system can support this scheme in the actual use of IGBT module, the application of this scheme is relatively limited.
[0007] Therefore, a one word type three level module circuit with RC absorption circuit built-in CE of inner tube is designed to overcome the above problems. Utility Model Content
[0008] The purpose of this invention is to overcome the shortcomings of the existing technology and provide a one-line three-level module circuit with an RC absorption circuit built into the inner tube CE, which has a simple and reasonable structure, reduces the inner tube turn-off stress, especially the inner tube voltage stress of T2T3, and improves the heat dissipation performance of IGBT.
[0009] This utility model is achieved through the following technical solution: a three-level module circuit with an internal CE built-in RC snubber circuit, comprising a three-level inverter circuit and an RC snubber circuit disposed on the three-level inverter circuit. The three-level inverter circuit includes a positive power supply circuit, a negative power supply circuit, and four parallel circuits disposed between the positive power supply circuit and the negative power supply circuit. The four parallel circuits are a first parallel circuit, a second parallel circuit, a third parallel circuit, and a fourth parallel circuit. The first parallel circuit is located near the input terminal of the three-level inverter circuit, and two capacitors are respectively disposed on the first parallel circuit. The second, third, and fourth parallel circuits each have... The circuit comprises four sets of IGBT transistors (top and bottom) and four sets of diodes. The collector of each IGBT transistor is electrically connected to the cathode of each diode, and the emitter of the IGBT transistor is electrically connected to the anode of the diode. In the middle two sets of IGBT transistors and diodes in the second, third, and fourth parallel circuits, a branch with two diodes and an RC snubber circuit are connected in parallel on the left and right sides, respectively. The RC snubber circuit is used to reduce the internal voltage stress of the IGBT transistors. An external lead circuit is connected to the middle of the second, third, and fourth parallel circuits. Each lead circuit is equipped with at least two inductors, a switch, and a resistor, serving as the output terminal of the one-line three-level inverter circuit.
[0010] Preferably, each of the lead-out circuits is connected to a protection circuit with a capacitor between the two inductors. The three protection circuits are arranged in parallel and are all connected to one end of the connecting circuit. The other end of the connecting circuit is connected in sequence to the middle of the first parallel circuit, the second parallel circuit, the third parallel circuit, and the middle of the branch with two diodes on the fourth parallel circuit.
[0011] As preferred: the four groups of IGBT transistors are the first IGBT transistor T1, the second IGBT transistor T2, the third IGBT transistor T3 and the fourth IGBT transistor T4 in turn, and the four groups of diodes are the first diode D1, the second diode D2, the third diode D3 and the fourth diode D4 in turn, and one RC absorption circuit is connected in parallel on the outer side of the second diode D2 and the third diode D3, and one capacitor and one resistor are arranged on the RC absorption circuit respectively, for reducing the internal tube voltage stress of the second IGBT transistor T2 and the third IGBT transistor T3 and achieving the heat dissipation effect.
[0012] As preferred: the RC absorption circuit is connected with the second parallel circuit, the third parallel circuit and the fourth parallel circuit through a bonding wire, so that the RC absorption circuit is arranged in the IGBT module.
[0013] As preferred: one protection resistor and one protection switch are arranged on the power supply positive circuit and the power supply negative circuit respectively and close to the input end of the linear three-level inverter circuit, for ensuring the normal operation of the module circuit.
[0014] The beneficial effects of the utility model are as follows:
[0015] The utility model discloses the innovative point lies in not through the RC absorption loop of IGBT module outside increase, and the RC absorption circuit is arranged in the IGBT module. The second IGBT transistor T2 and the third IGBT transistor T3 (abbreviated as T2T3 tube) are arranged in the IGBT module, and the RC absorption circuit is connected through the bonding wire from the chip end. Due to the module internal wiring, the universality of the scheme is increased, and the space requirement of the system whole machine is reduced. The inductance of the long commutation loop can be greatly reduced, and the internal tube voltage stress of the IGBT module T2T3 can be effectively reduced. In addition, the RC absorption circuit is directly arranged on the DBC in the module, and the best heat dissipation effect can be achieved. BRIEF DESCRIPTION OF DRAWINGS
[0016] Figure 1 It is the short commutation loop in the linear three-level topology application.
[0017] Figure 2 It is the long commutation loop in the linear three-level topology application.
[0018] Figure 3 It is the schematic diagram of the linear three-level module circuit in the utility model.
[0019] Figure 4 The utility model discloses a structure diagram of RC absorption circuit. DETAILED DESCRIPTION
[0020] In order to make ordinary skilled in the art more clearly understand the purpose, technical scheme and advantage of the utility model, the following will be combined with the drawings and examples to make further elaboration to the utility model.
[0021] In the description of the utility model, it needs to be understood that the orientation or position relation indicated by the terms such as "up", "down", "left", "right", "inner", "outer", "horizontal", "vertical" is based on the orientation or position relation shown in the drawing, and is only for the convenience of describing the utility model, and is not indicated or implied that the indicated device or element must have a particular orientation, therefore, it can not be understood as the limitation of the utility model.
[0022] The utility model will be described in detail in combination with the drawings as follows: Figures 3-4 As shown in a kind of RC absorption circuit's one-word three-level module circuit of inner tube CE built-in, including one-word three-level inverter circuit and RC absorption circuit being set on one-word three-level inverter circuit, the one-word three-level inverter circuit includes power supply positive circuit 1, power supply negative circuit 2 and the four parallel circuits being set between power supply positive circuit 1 and power supply negative circuit 2, the four parallel circuits are respectively first parallel circuit 3, second parallel circuit 4, third parallel circuit 5 and fourth parallel circuit 6, wherein first parallel circuit 3 is close to one-word three-level inverter circuit input side, and there are two capacitors 12 on first parallel circuit, and there are four groups of IGBT transistors and four groups of diodes on second parallel circuit, third parallel circuit and fourth parallel circuit, the collector 7 of each group of IGBT transistors and the cathode 8 of each group of diodes are electrically connected, the emitter 9 of its IGBT transistor and the anode 10 of diode are electrically connected, and in the middle two groups of IGBT transistors and diodes of second parallel circuit 4, third parallel circuit 5 and fourth parallel circuit 6 are respectively left and right parallel with a branch 21 with two diodes and an RC absorption circuit 20, RC absorption circuit 20 is used to reduce the internal tube voltage stress of IGBT transistor, and the middle position of second parallel circuit 4, third parallel circuit 5 and fourth parallel circuit 6 is respectively connected with a lead-out circuit 11, and at least two inductors 13, a switch 14 and a resistor 15 are respectively arranged on each lead-out circuit 11, as the output end of one-word three-level inverter circuit.
[0023] Each of the lead-out circuits 11 is connected with a protection circuit 16 with a capacitor between two inductors, three protection circuits 16 are arranged in parallel and are connected with one end of a connecting circuit 17, the other end of the connecting circuit 17 is connected with the middle part of the first parallel circuit 3, the second parallel circuit 4, the third parallel circuit 5 and the middle part of the branch 21 with two diodes on the fourth parallel circuit 6 in sequence.
[0024] The four groups of IGBT transistors are a first IGBT transistor T1, a second IGBT transistor T2, a third IGBT transistor T3 and a fourth IGBT transistor T4 in sequence, the four groups of diodes are a first diode D1, a second diode D2, a third diode D3 and a fourth diode D4 in sequence, and one RC absorption circuit 20 is connected in parallel on the outer side of the second diode D2 and the third diode D3, a capacitor and a resistor are arranged on the RC absorption circuit respectively, so as to reduce the internal tube voltage stress of the second IGBT transistor T2 and the third IGBT transistor T3 and achieve the heat dissipation effect.
[0025] The third IGBT transistor T3 and the fourth IGBT transistor T4 of each of the second parallel circuit, the third parallel circuit and the fourth parallel circuit are provided with an inductor circuit 22, one end of the inductor circuit 22 is connected with the second parallel circuit 4 or the third parallel circuit 5 or the fourth parallel circuit 6, and the other end is connected with the first parallel circuit 3.
[0026] The RC absorption circuit 20 is connected with the second parallel circuit 4, the third parallel circuit 5 and the fourth parallel circuit 6 through a bonding wire, so as to realize that the RC absorption circuit 20 is arranged in the IGBT module.
[0027] The power supply positive circuit 1 and the power supply negative circuit 2 are respectively provided with a protection resistor 18 and a protection switch 19 close to one side of the input end of the character-shaped three-level inverter circuit, so as to ensure the normal operation of the module circuit.
[0028] The utility model does not increase RC absorption loop through IGBT module outside, and the RC absorption circuit is arranged in the IGBT module. The internal tube second IGBT transistor T2 and the third IGBT transistor T3 (referred to as T2T3 tube) are arranged in the CE absorption RC loop in the IGBT module, and the connection of the RC absorption circuit is completed through the bonding wire from the chip end. Due to the wiring in the module, the universality of the scheme is increased, and the space requirement of the system whole machine is reduced. The inductance of the long commutation loop can be greatly reduced, and the internal tube voltage stress of the IGBT module T2T3 can be effectively reduced. In addition, the RC absorption circuit is directly arranged on the DBC in the module, and the best heat dissipation effect can be achieved.
[0029] The specific embodiments described herein are merely illustrative of the principles of the present application and its efficacy, and are not intended to limit the present application. Any person skilled in the art can modify or change the above embodiments without departing from the spirit and scope of the present application. Therefore, all equivalent modifications or changes made by those skilled in the art without departing from the spirit and technical concept disclosed by the present application shall be covered by the claims of the present application.
Claims
1. A one-dimensional three-level module circuit of RC absorption circuit with inner tube CE, comprising a one-dimensional three-level inverter circuit and an RC absorption circuit arranged on the one-dimensional three-level inverter circuit, the one-dimensional three-level inverter circuit comprising a positive electrode circuit (1) of a power supply, a negative electrode circuit (2) of the power supply and four parallel circuits arranged between the positive electrode circuit (1) of the power supply and the negative electrode circuit (2) of the power supply, characterized in that: The four parallel circuits are a first parallel circuit (3), a second parallel circuit (4), a third parallel circuit (5) and a fourth parallel circuit (6), wherein the first parallel circuit (3) is close to one side of the input end of the linear three-level inverter circuit, two capacitors (12) are arranged on the first parallel circuit, four groups of IGBT transistors and four groups of diodes are arranged on the second parallel circuit, the third parallel circuit and the fourth parallel circuit, the collector (7) of each group of IGBT transistors is electrically connected with the cathode (8) of each group of diodes, the emitter (9) of the IGBT transistor is electrically connected with the anode (10) of the diode, and in the middle of the second parallel circuit (4), the third parallel circuit (5) and the fourth parallel circuit (6), two groups of IGBT transistors and diodes are respectively connected in parallel with a branch (21) with two diodes and an RC snubber circuit (20) on the left and right, the RC snubber circuit (20) is used for reducing the internal tube voltage stress of the IGBT transistor, an outgoing circuit (11) is externally connected to the middle position of the second parallel circuit (4), the third parallel circuit (5) and the fourth parallel circuit (6), at least two inductors (13), a switch (14) and a resistor (15) are arranged on each outgoing circuit (11), and the outgoing circuit (11) is used as an output end of the linear three-level inverter circuit.
2. The one-word three-level module circuit of claim 1, wherein: A protection circuit (16) with a capacitor is connected between two inductors on each outgoing circuit (11), three protection circuits (16) are arranged in parallel and are connected with one end of a connecting circuit (17), and the other end of the connecting circuit (17) is sequentially connected with the middle position of the first parallel circuit (3), the second parallel circuit (4), the third parallel circuit (5) and the branch (21) with two diodes on the fourth parallel circuit (6).
3. The one-word three-level module circuit of claim 1 or 2, wherein: The four groups of IGBT transistors are a first IGBT transistor T1, a second IGBT transistor T2, a third IGBT transistor T3 and a fourth IGBT transistor T4, the four groups of diodes are a first diode D1, a second diode D2, a third diode D3 and a fourth diode D4, an RC snubber circuit (20) is connected on the outer side of the second diode D2 and the third diode D3, a capacitor and a resistor are arranged on the RC snubber circuit, and the RC snubber circuit is used for reducing the internal tube voltage stress of the second IGBT transistor T2 and the third IGBT transistor T3 and achieving a heat dissipation effect.
4. The one-word three-level module circuit of claim 3, wherein: A circuit (22) with an inductor is arranged between each group of third IGBT transistors T3 and fourth IGBT transistors T4 of the second parallel circuit, the third parallel circuit and the fourth parallel circuit, one end of the circuit (22) is connected with the second parallel circuit (4), the third parallel circuit (5) or the fourth parallel circuit (6), and the other end is connected with the first parallel circuit (3).
5. The one-word three-level module circuit of claim 4, wherein: The RC absorption circuit (20) is connected with the second parallel circuit (4), the third parallel circuit (5) and the fourth parallel circuit (6) through a bonding wire, so as to realize the placement of the RC absorption circuit (20) in the IGBT module.
6. The one-word three-level module circuit of claim 1 or 5, wherein: A protection resistor (18) and a protection switch (19) are respectively arranged on the power supply positive circuit (1) and the power supply negative circuit (2) near one side of the input end of the linear three-level inverter circuit, so as to ensure the normal operation of the module circuit.