Wafer temperature control system

Abstract

The utility model relates to a wafer temperature control system. The wafer temperature control system comprises a supporting platform which comprises a first surface and a second surface, and the first surface is used for supporting a wafer; the plurality of galvanic couple pairs are arranged on the second surface of the supporting platform, each galvanic couple pair comprises an N-type semiconductor and a P-type semiconductor which are connected, and the plurality of galvanic couple pairs are mutually connected; and the power supply control module is electrically connected with each couple pair and is used for controlling the direction of the current input to the couple pair. According to the wafer temperature control system provided by the utility model, the direction of the current input to the galvanic couple pair is controlled through the power supply control module, so that the temperature of the wafer is regulated and controlled, and the temperature of the wafer can meet the process requirement.

Description

TECHNICAL FIELD

[0001] The utility model relates to the technical field of semiconductor, particularly to wafer temperature control system. BACKGROUND

[0002] Wafer is the basic material of semiconductor chip manufacturing, which is formed by a series of processing technology of semiconductor material (such as silicon) into a thin sheet. In high temperature process, the temperature of wafer needs to be controlled, such as wafer needs to be cooled to the temperature allowed by the transport box to return the wafer to the transport box, including FOUP (Front Opening Unified Pod, front opening wafer transport box). In addition, some processes need to preheat the wafer to the appropriate temperature.

[0003] In the traditional technology, the cooling of wafer mainly relies on vacuum transmission body (load lock) or cooling station, and the preheating of wafer needs to be preheated in vacuum transmission body (load lock), which leads to too long cooling time or preheating time, affecting the production efficiency. UTILITY MODEL CONTENT

[0004] Therefore, it is necessary to provide a wafer temperature control system to solve the problem of slow cooling and preheating rate of wafer in semiconductor process, which affects the production efficiency.

[0005] The utility model provides a wafer temperature control system, which comprises: a supporting platform comprising a first surface and a second surface, the first surface being used for supporting wafer; a plurality of galvanic couples arranged on the second surface of the supporting platform, each galvanic couple comprising an N-type semiconductor and a P-type semiconductor connected together, and the plurality of galvanic couples being connected to each other; and a power supply control module electrically connected to each galvanic couple and used for controlling the direction of current input to the galvanic couple.

[0006] In one embodiment, the wafer temperature control system further comprises a temperature detection module connected to the power supply control module, the temperature detection module being used for detecting the current temperature of the wafer, and the power supply control module being used for determining the direction of current input to the galvanic couple based on the current temperature. In this way, the temperature detection module is used for detecting the current temperature of the wafer and transmitting the detected temperature value to the power supply control module, so that the power supply control module can determine whether the wafer needs to be heated or cooled based on the current temperature of the wafer and a preset temperature threshold, thereby realizing the temperature control of the wafer by controlling the direction of current input to the galvanic couple.

[0007] In one of the embodiments, the power control module is configured to control the direction of the current input to the galvanic couple to make the galvanic couple heat-releasing on the side facing the support platform when the current temperature of the wafer is less than the preset temperature threshold. In this way, when the current temperature of the wafer is less than the preset temperature threshold, the power control module makes the galvanic couple heat-releasing on the side facing the support platform to preheat the wafer on the first surface of the support platform to increase the temperature of the wafer.

[0008] In one of the embodiments, the temperature detection module includes a first temperature sensor and a second temperature sensor, the first temperature sensor is arranged on the wafer transfer box, and the second temperature sensor is arranged on the support platform. The temperature sensor arranged on the wafer transfer box is configured to detect the current temperature of the wafer to be cooled or heated, so as to facilitate the power control module to control the current input to the galvanic couple or to detect whether the temperature after cooling or heating meets the requirements, and the temperature sensor arranged on the support platform is configured to detect whether the temperature of the wafer after cooling or heating meets the requirements.

[0009] In one of the embodiments, the power control module is further configured to determine the size of the current input to the galvanic couple based on the current temperature. The power control module controls the size of the current input to the galvanic couple to change the temperature value of the galvanic couple, so as to adjust the heating or cooling rate of the galvanic couple.

[0010] In one of the embodiments, the support platform is provided with a plurality of protrusions on the first surface. The protrusions increase the roughness of the surface of the support platform, thereby increasing the contact area between the support platform and the wafer, and further increasing the friction. In addition, higher protrusions can be arranged on the edge of the support platform to block the wafer and prevent it from falling off.

[0011] In one of the embodiments, the protrusion includes a first part and a second part connected to each other, the first part is connected to the support platform, and the second part is configured to support the wafer. The first part is configured to connect the support platform to stably arrange the protrusion on the surface of the support platform, and the second part is configured to increase the friction with the wafer and reduce the sliding of the wafer on the support platform.

[0012] In one of the embodiments, the first part is a circular truncated cone, the side with a large base area of the first part is connected to the support platform, and the side with a small base area of the first part is connected to the second part; and the second part is a hemisphere. The side with a large base area of the circular truncated cone is connected to the support platform to stably arrange the protrusion and prevent the protrusion from shaking. The second part can be made of soft elastic material such as resin, and the hemisphere-shaped second part contacts the wafer to increase the friction.

[0013] In one embodiment, the area of the supporting platform is configured to accommodate more than 60% of the area of the wafer, and the plurality of galvanic couples covers more than 80% of the area of the supporting platform. On one hand, the area of the supporting platform is large enough to support the wafer completely and avoid the wafer from tilting and falling; on the other hand, the area covered by the galvanic couples is large enough to allow the wafer to be cooled or heated in a large area and avoid the wafer from having uneven temperature and generating defects.

[0014] In one embodiment, the material of the supporting platform is ceramic. On one hand, ceramic is insulating, and ceramic insulating material has high insulation strength and volume resistivity, which can effectively prevent the passage of current and provide reliable insulation protection; on the other hand, ceramic insulating material can maintain stable insulation performance in a high-temperature environment and has high heat resistance, and can usually withstand hundreds of degrees or even higher temperatures, thereby avoiding damage to the supporting platform when the temperature of the wafer is too high.

[0015] The wafer temperature control system described above supports the wafer through the supporting platform, heats or cools the wafer through the semiconductor galvanic couples, changes the preheating and cooling effect through the direction of the input current of the galvanic couples, controls the direction of the current input to the galvanic couples through the power supply control module, and thus realizes temperature regulation of the wafer, so that the temperature of the wafer can meet the process requirements. BRIEF DESCRIPTION OF DRAWINGS

[0016] Figure 1 FIG. 1 is a structural schematic diagram of a wafer temperature control system in one embodiment;

[0017] Figure 2 FIG. 3 is a schematic diagram of the positional relationship between the supporting platform, the galvanic couples, and the wafer in one embodiment;

[0018] Figure 3 FIG. 5 is a working principle diagram of the galvanic couples in one embodiment;

[0019] Figure 4 FIG. 7 is a schematic diagram of the current direction control of the power supply control module in one embodiment;

[0020] Figure 5 FIG. 9 is a schematic diagram of the current direction control of the power supply control module in another embodiment;

[0021] Figure 6 FIG. 11 is a schematic diagram of the module composition of the wafer temperature control system in another embodiment;

[0022] Figure 7 FIG. 13 is a schematic diagram of the positional relationship between the galvanic couples and the supporting platform in one embodiment;

[0023] Figure 8 FIG. 15 is a structural schematic diagram of the galvanic couples in one embodiment;

[0024] Figure 9Structure diagram of the supporting platform with protrusions in one embodiment;

[0025] Figure 10 Structure diagram of the protrusions in one embodiment;

[0026] Figure 11 Top view of the wafer placed on the supporting platform in one embodiment.

[0027] The reference signs: 100, supporting platform; 110, first conductive part; 120, second conductive part; 130, protrusion; 131, first part; 132, second part; 140, stopper; 200, galvanic couple; 300, power supply control module; 400, wafer; 500, temperature detection module; 600, wafer transfer box; S1, first surface; S2, second surface. DETAILED DESCRIPTION

[0028] In order to make the above objectives, characteristics and advantages of the present application more apparent, specific embodiments of the present application will be described in detail below with reference to the drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application. However, the present application can be practiced in a number of ways other than those specifically described herein, and the present application is not limited to the embodiments described herein as long as they do not depart from the spirit of the present application. Therefore, the present application is not limited to the specific embodiments disclosed below.

[0029] In addition, the terms "first", "second", etc. are used only for the purpose of description, and should not be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, the features defined with "first", "second", etc. can explicitly or implicitly include at least one of the features. In the description of the present application, the meaning of "a plurality of" is at least two, such as two, three, etc., unless otherwise specifically limited.

[0030] In the present application, unless otherwise specifically defined and limited, the terms "mounting", "connection", "connecting", "fixing", etc. should be understood in a broad sense, for example, it can be fixedly connected, or it can be detachably connected, or it can be integrated; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium; it can be the internal communication of two elements or the interaction relationship between two elements, unless otherwise specifically limited. For ordinary skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0031] In the present application, unless otherwise explicitly specified and limited, the first feature is "on" or "under" the second feature, which can be direct contact between the first and second features, or indirect contact through an intermediate medium. Moreover, the first feature "above", "above" and "above" the second feature can be directly above or obliquely above the first feature, or only indicate that the horizontal height of the first feature is higher than that of the second feature. The first feature "below", "below" and "below" the second feature can be directly below or obliquely below the first feature, or only indicate that the horizontal height of the first feature is less than that of the second feature.

[0032] It should be noted that when an element is referred to as "fixed to" or "provided on" another element, it can be directly on another element or there can be a middle element. When an element is considered to be "connected" to another element, it can be directly connected to another element or there can be a middle element. The terms "vertical", "horizontal", "up", "down", "left", "right" and similar expressions used herein are for illustrative purposes only and are not the only embodiment.

[0033] At present, the wafer cooling of high-temperature process relies on the vacuum transmission body (load lock) or the cooling station to reduce the wafer temperature to a temperature close to the acceptable temperature of the FOUP material, so that the wafer can be returned to the FOUP. And the process that requires preheating of the wafer in the vacuum transmission body, the wafer needs to be preheated to the required temperature to reduce the wafer bow value in the previous process and reduce the preheating time of the wafer in the process reaction chamber. For the process of WPH (Wafer per Hour, wafer per hour) bottleneck in the vacuum transmission body cooling / preheating, the safe reduction of wafer cooling or preheating time can improve the WPH.

[0034] Referring to Figure 1 , Figure 1 The utility model discloses a wafer temperature control system, and the wafer temperature control system comprises a supporting platform 100, a plurality of galvanic couples 200 and a power control module 300. The supporting platform 100 is used for supporting a wafer 400, the galvanic couple 200 is arranged on one side of the supporting platform 100, the current of the galvanic couple 200 is controlled by the power control module 300, and at least the current direction of the galvanic couple 200 is input to change whether the galvanic couple 200 cools or heats the supporting platform 100.

[0035] Referring to Figure 2 , Figure 2A structural diagram of a support platform 100 in one embodiment is shown. The support platform 100 includes a first surface S1 and a second surface S2, the first surface S1 is used to support a wafer 400. Optionally, the first surface S1 faces upward, the second surface S2 faces downward, the wafer 400 is placed on the first surface S1 of the support platform 100, and the support platform 100 provides a supporting force. Illustratively, the support platform 100 can be a ceramic insulating material. On the one hand, the ceramic insulating material has a very high insulation strength and volume resistivity, which can effectively prevent the passage of current and provide reliable insulation protection; on the other hand, the ceramic insulating material can maintain stable insulation performance in a high temperature environment, has high heat resistance, and can generally withstand hundreds of degrees or even higher temperatures, thereby avoiding damage to the support platform 100 when the wafer temperature is too high.

[0036] The thermocouple pair 200 is arranged on the second surface S2 of the support platform 100, and includes a connected N-type semiconductor and a P-type semiconductor. A plurality of thermocouple pairs 200 are connected to each other to enable the power supply to simultaneously power all the thermocouple pairs 200. The thermocouple pair 200 is made using the Peltier effect and includes an N-type semiconductor and a P-type semiconductor. The N-type semiconductor conducts electricity by electrons, and the P-type semiconductor conducts electricity by "holes". Electrons and holes are collectively referred to as "carriers".

[0037] The Peltier effect, also known as the thermoelectric effect or thermoelectric cooling effect, refers to the phenomenon that when an electric current passes through the contact of two different materials, a temperature difference occurs. This is a mutual conversion effect between heat and electricity. When an electric current passes through the contact surface of two different materials, according to the characteristics of the materials, the electrons in one material will be excited, gain energy and jump to the other material. In this process, the transfer of energy causes a change in temperature at the contact: one side heats up, and the other side cools down. Based on the characteristics of semiconductors, the direction of heating and cooling can be changed by switching the direction of the current.

[0038] A plurality of semiconductor thermocouple pairs 200 are connected together through electrodes and arranged on the second surface S2 of the support platform 100. When an electric current flows through, a hot side and a cold side are generated on both sides of the semiconductor thermocouple pair 200 as a whole. Whether cooling or heating is determined by the direction of the current, and the rate of temperature change is determined by the size of the current. A pair of semiconductor thermocouple pairs generates a small thermoelectric effect. Hundreds of thermocouple pairs 200 are connected in series or parallel, so that the thermoelectric effect generated will increase.

[0039] The power supply control module 300 is electrically connected to each thermocouple pair 200 and is used to control the direction of the current input to the thermocouple pair 200. The thermocouple pair 200 has different effects, including cooling and heating, depending on the direction of the current. For example, Figure 3As shown, when the direct current flows from the N-type semiconductor to the P-type semiconductor, then the end of 2, 3 generates the endothermic phenomenon, this end is called the cold end; and the end of 1, 4 generates the exothermic phenomenon, this end is called the hot end. If the current direction is reversed, the cold and hot ends will be exchanged.

[0040] As shown, the supporting platform 100 is located at one side of the galvanic couple 200, and the current direction input to the galvanic couple 200 can be controlled by the power supply control module 300, so as to change whether the supporting platform 100 is refrigeration or heating, so as to adjust the temperature of the wafer 400. As shown in Figure 4 and Figure 5 As shown, Figure 4 and Figure 5 respectively show the opposite current directions, and the high level position of the power supply control module 300 controls the current direction input to the galvanic couple 200.

[0041] In a feasible implementation, the supporting platform 100 can include a first sub-platform and a second sub-platform, and the galvanic couple 200 is arranged between the first sub-platform and the second sub-platform, so that under the direct current, one of the first sub-platform and the second sub-platform is heating and the other is refrigeration. Further, a rotating mechanism can also be arranged, and the supporting platform 100 is rotated according to the temperature adjustment requirement of the wafer 400, for example, when cooling is required, the refrigeration end is upward to support the wafer 400, and when preheating is required, the heating end is upward to support the wafer 400.

[0042] In the above wafer temperature control system, the wafer 400 is supported by the supporting platform 100, and the heating or refrigeration of the wafer 400 is realized by the galvanic couple 200, the preheating and refrigeration effects of the galvanic couple 200 are changed by the input current direction, the current direction input to the galvanic couple 200 is controlled by the power supply control module 300, so as to realize the temperature control of the wafer 400, and the temperature of the wafer 400 can meet the process requirements.

[0043] In an exemplary embodiment, as shown in Figure 6 The wafer temperature control system further includes a temperature detection module 500 for detecting the temperature of the wafer 400. The temperature control module 400 is connected with the power supply control module 300, the temperature detection module 500 detects the current temperature of the wafer 400, and transmits the detected temperature value to the power supply control module 300, so that the power supply control module 300 can determine whether the wafer 400 needs heating or refrigeration based on the current temperature of the wafer 400 and the preset temperature threshold, so as to realize the temperature control of the wafer by controlling the current direction input to the galvanic couple 200.

[0044] Optionally, the temperature detecting module 500 comprises a temperature sensor for detecting the temperature of the wafer. Illustratively, the temperature sensor can be an infrared temperature sensor for detecting the temperature by infrared rays. The temperature sensor does not need to contact the wafer, but measures the surface temperature of the wafer by detecting the infrared rays emitted by the wafer.

[0045] In addition, the temperature detecting module 500 can comprise a first temperature sensor arranged on the wafer transfer box 600 (FOUP) and a second temperature sensor arranged on the support platform 100. The temperature sensor arranged on the wafer transfer box 600 is used to detect the current temperature of the wafer to be cooled / heated, so as to facilitate the power control module 300 to control the current input to the thermocouple pair 200. The temperature sensor arranged on the support platform 100 is used to detect whether the temperature of the wafer 400 after being cooled / heated meets the requirements.

[0046] Further, the power control module 300 can also be used to control the current input to the thermocouple pair 200 according to the current temperature of the wafer detected by the temperature detecting module 500, so as to change the temperature value of the thermocouple pair and thereby adjust the heating or cooling rate.

[0047] Through the above-mentioned temperature detecting module 500, the power control module 300 can adjust the current direction in real time based on the temperature of the wafer 400, so as to switch the thermocouple pair 200 between cooling and heating. The temperature detecting module 500 transmits the current temperature of the wafer 400 detected to the power control module 300. In one embodiment, the power control module 300 is used to control the current direction input to the thermocouple pair 200 when the current temperature of the wafer 400 is less than a preset temperature threshold, so that the thermocouple pair 200 is heat-dissipating on the side facing the support platform 100, so as to preheat the wafer 100 on the first surface S1 of the support platform 100 and increase the temperature thereof. In another embodiment, the power control module 300 is used to control the current direction input to the thermocouple pair 200 when the current temperature of the wafer 400 is greater than a preset temperature threshold, so that the thermocouple pair 200 is heat-absorbing on the side facing the support platform 100, so as to cool the wafer 400 on the first surface S1 of the support platform 100 and decrease the temperature thereof.

[0048] Meanwhile, referring to Figure 7 and Figure 8 , in one exemplary embodiment, as shown in Figure 7 , the second surface S2 of the support platform 100 is spaced apart with a plurality of first conductive members 110, and one thermocouple pair 200 is connected through one first conductive member 110; adjacent thermocouple pairs 200 are connected through one second conductive member 120. The plurality of first conductive members 110 are spaced apart, so that adjacent thermocouple pairs 200 will not be in contact and short-circuit.

[0049] Optionally, the first conductive member 110 can be attached to the second surface S2 of the support platform 100, or can be spaced apart from the support platform 100. Illustratively, the first conductive member 110 and the second conductive member 120 can be copper pieces.

[0050] Illustratively, Figure 8 One of the galvanic couples includes an N-type semiconductor and a P-type semiconductor, which are connected by the first conductive member 110. The N-type semiconductor is connected to the P-type semiconductor of the adjacent galvanic couple 200 by the second conductive member 120, and the P-type semiconductor is connected to the N-type semiconductor of the adjacent galvanic couple 200 by the second conductive member 120. Optionally, the first conductive member 110 and the second conductive member 120 include copper.

[0051] The plurality of adjacent galvanic couples 200 are connected by the second conductive member 120, so that the plurality of galvanic couples 200 are connected in series, in parallel, or in a mixed connection, which means that both series and parallel connections exist in the circuit formed by the galvanic couples 200.

[0052] In addition, in order to increase the friction between the wafer 400 and the support platform 100 when the wafer 400 is placed on the first surface S1 of the support platform 100, please refer to Figure 9 In one embodiment, the support platform 100 is provided with a plurality of protrusions 130 on the first surface S1. The protrusions 130 increase the roughness of the surface of the support platform 100, thereby increasing the contact area between the support platform 100 and the wafer 400, and further increasing the friction. When the wafer 400 and the first support platform 100 are in contact, the protrusions 130 increase the contact area, thereby increasing the friction.

[0053] In addition, please refer to Figure 9 The support platform 100 can also be provided with a plurality of stoppers 140 on the first surface S1, which are used to block the wafer 400 from falling. Specifically, when the wafer 400 is placed on the support platform 100, the stoppers 140 can limit the movement distance of the wafer 400, thereby preventing it from falling off the support platform 100. Illustratively, the height of the stopper 140 should be higher than the top surface of the wafer 400 when the wafer 400 is placed on the support platform 100, so that the wafer 400 is completely blocked. Illustratively, the stopper 140 can be arranged at the edge of the support platform 100.

[0054] In one embodiment, as Figure 10As shown, the protrusion 130 comprises a first part 131 connected with the supporting platform 100 and a second part 132 for supporting the wafer 400. Optionally, the bottom of the first part 131 of the protrusion 130 is connected with and supported by the supporting platform 100, the top of the first part 131 is connected with the bottom of the second part 132, and the top of the second part 132 is connected with the wafer 400. Illustratively, the second part 132 can be made of soft elastic material, such as resin, etc. to increase the friction. In a feasible implementation, the protrusion 130 can be integrally formed with the supporting platform 100 or bonded to the supporting platform 100 by an adhesive.

[0055] In a feasible implementation, the first part 131 is configured as a circular truncated cone. The circular truncated cone is a three-dimensional body composed of a circular bottom, a smaller circular top, and curved sides. The first part 131 of the protrusion 130 is connected with the supporting platform 100 at the side with a larger area, which can provide better stability and fix the protrusion 130. The side with a smaller area is connected with the second part 132, which supports the second part 132 of the protrusion 130. The second part 132 is hemispherical. The flat surface of the hemisphere is connected with the first part 132, and the spherical surface is used to support the wafer 400 to avoid excessive contact area and damage to the wafer 400, which can reduce the yield.

[0056] Referring to Figure 11 In an exemplary embodiment, the area of the supporting platform 100 is configured to accommodate at least 60% of the area of the wafer 400, and the plurality of galvanic couples 200 covers at least 80% of the area of the supporting platform 100. As shown, Figure 11 The supporting platform 100 can be configured as a polygon, and a stopper 140 is arranged at the edge of the polygon to block the wafer. When the wafer 400 is placed on the supporting platform 100, it can be prevented from falling off. It can be understood that, Figure 11 The galvanic couples 200 in

[0057] The area of the supporting platform 100 can accommodate at least 60% of the area of the wafer 400, so that the wafer 400 can be stably supported. The plurality of galvanic couples 200 covers at least 80% of the area of the supporting platform 100, so that the supporting platform 100 uniformly cools or heats the wafer 400, avoids temperature unevenness and cracking, and reduces the yield.

[0058] Any combination of the technical features in the above-described embodiments can be made, and for the sake of brevity, not all possible combinations are described, however, as long as the combination of the technical features does not exist in contradiction, it shall be considered as within the scope of the present disclosure.

[0059] The above-described embodiments only express several implementation manners of the present application, the description is relatively specific and detailed, but it shall not be understood as a limitation on the scope of the present application patent. It should be pointed out that, for ordinary skilled in the art, under the premise of not departing from the concept of the present application, a number of modifications and improvements can be made, which all belong to the protection scope of the present application. Therefore, the protection scope of the present application patent shall be subject to the appended claims.

Claims

1. A wafer temperature control system, characterized by, The application relates to a wafer supporting device, comprising: a supporting platform, comprising a first surface and a second surface, the first surface being used for supporting a wafer; a plurality of galvanic couples arranged on the second surface of the supporting platform, the galvanic couples comprising connected N-type semiconductors and P-type semiconductors, and the galvanic couples being connected with each other; a power supply control module, electrically connected with the galvanic couples, and used for determining the current direction input to the galvanic couples based on a current temperature; a temperature detection module, connected with the power supply control module, and used for detecting the current temperature of the wafer, the temperature detection module comprising a first temperature sensor and a second temperature sensor, the first temperature sensor being arranged on a wafer transfer box, and the second temperature sensor being arranged on the supporting platform.

2. The wafer temperature control system of claim 1, wherein, The power supply control module is further used for determining the current size input to the galvanic couples based on the current temperature.

3. The wafer temperature control system of claim 1, wherein, The second surface of the supporting platform is spacedly provided with a plurality of first conductive pieces, one galvanic couple being connected through one first conductive piece, and adjacent galvanic couples being connected through a second conductive piece.

4. The wafer temperature control system of claim 1, wherein, The supporting platform is provided with a plurality of protrusions on the first surface.

5. The wafer temperature control system of claim 4, wherein, The protrusions comprise connected first parts and second parts, the first parts being connected with the supporting platform, and the second parts being used for supporting the wafer.

6. The wafer temperature control system of claim 5, wherein, The first parts are circular truncated cone-shaped, one side with a large bottom area of the first parts being connected with the supporting platform, and the other side with a small bottom area of the first parts being connected with the second parts; and the second parts are hemispherical.

7. The wafer temperature control system of claim 1, wherein, The area of the supporting platform is constructed to be at least more than 60% of the area of the wafer, and the galvanic couples cover at least more than 80% of the area of the supporting platform.

8. The wafer temperature control system of claim 1, wherein, The material of the supporting platform is ceramic.

9. The wafer temperature control system of claim 1, wherein, The first temperature sensor and the second temperature sensor are infrared temperature sensors.

10. The wafer temperature control system of claim 3, wherein, The first conductive pieces and the second conductive pieces are copper sheets.

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