Base and gas-phase reaction device

Abstract

According to the base and the gas phase reaction device, a bearing area comprises a concave cavity, an arc-shaped groove is formed in the edge area of the concave cavity, an opening in the top face of the arc-shaped groove comprises a first end and a second end which are opposite to each other, and a first acute angle a between the first end and a connecting line between the second end and the center of the bearing area where the arc-shaped groove is located ranges from 85 degrees to 95 degrees; the temperature nonuniformity between the middle part and the edge part of the substrate caused by the heat transfer of the side wall of the bearing area to the substrate is reduced. At least one edge supporting piece is arranged in the arc-shaped groove, and the top surface of the edge supporting piece is flush with the top surface of the middle of the bearing area, so that when the substrate is placed on the bearing area, part of the edge of the substrate is suspended above the arc-shaped groove, and the suspended part of the edge is supported by the edge supporting piece at the same time. The arc-shaped groove is combined with the edge supporting piece to cooperatively adjust the contact area between the edge area and the edge of the substrate, so that the heat transfer uniformity of the edge of the substrate is optimized.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor device and apparatus technology, and in particular to a base and gas phase reaction apparatus. Background Technology

[0002] The reaction chamber is a crucial chamber in semiconductor device manufacturing processes. In gas-phase reaction apparatus, the reaction chamber is where the reactants are introduced by gas and a flow field is established. For example, in a reaction chamber for material growth via gas-phase reaction, the transport of the gas source material and the removal of byproducts after the growth reaction are accomplished through the flow field established by the carrier gas and reactant gas together.

[0003] For reaction chambers used in vapor-phase material growth, controlling the temperature field within the chamber is a crucial factor affecting the vapor-phase reaction. For semiconductor films requiring high film quality, such as InGaAsP epitaxial wafers, temperature dependence is strong, necessitating precise temperature control to ensure the quality of the epitaxial film. Furthermore, even slight differences in gas flow and temperature at different locations on the wafer surface can lead to variations in the characteristics of the resulting semiconductor wafers, resulting in defective products. Utility Model Content

[0004] In view of the above-mentioned defects of the gas phase reaction device in the prior art, the present invention provides a base and a gas phase reaction device to improve the temperature non-uniformity between the middle and the edge of the substrate caused by the heat transfer of the base to the substrate.

[0005] One embodiment of this utility model provides a base, which includes a bearing area for bearing a substrate.

[0006] The bearing area includes a recess, and the bottom surface of the recess includes a central portion and an edge area surrounding the central portion;

[0007] Arc-shaped grooves are formed in each of the aforementioned edge areas, and the width of the arc-shaped grooves does not exceed 10% of the radial length of the area enclosed by the top edge of the bearing area;

[0008] The support includes at least one side support distributed in the arc-shaped groove, the top surface of the side support being flush with the top surface of the middle part of the bearing area.

[0009] Optionally, the support member further includes a plurality of central support members located in the center of the bearing area. The central support member is formed as a protruding structure that protrudes upward from the top surface of the center of the bearing area, or the central support member is formed as a plurality of columnar structures distributed in the center of the bearing area, with open spaces between adjacent columnar structures, and the sum of the top surface areas of each central support member is greater than the sum of the top surface areas of each edge support member.

[0010] Optionally, in the direction from the edge of the middle section towards the center, the vertical distance between the plane containing the top surface of the middle support member and the surface of the non-load-bearing area gradually decreases, and the vertical distance is greater than or equal to 0.

[0011] Optionally, the central support members are distributed on different circumferences from the inside out around the center of the bearing area, the top surfaces of the support members on the same circumference are located in the same plane, and the support members on the same circumference are evenly distributed on the circumference.

[0012] Optionally, the center of the arc-shaped groove coincides with the center of the bearing area.

[0013] Optionally, the top opening of the arc-shaped groove includes a first end and a second end opposite to each other, and the first acute angle α between the first end and the second end and the center of the bearing area where the arc-shaped groove is located is 85° to 95°.

[0014] Optionally, the second end is closer to the rotation center of the base than the first end, and the angle β between the line connecting the rotation center of the base and the center of the bearing area where the arcuate groove is located and the line connecting the rotation center of the base and the second end is 40° to 70°.

[0015] Optionally, the number of bearing areas is at least 3, and they are arranged from the inside out around the central axis of the base to form at least one set of recesses, and each set of recesses contains at least 3 recesses;

[0016] When the number of the recess groups is at least 2, in adjacent recess groups, the number of recesses in the inner ring recess group closer to the central axis of the base is less than the number of recesses in the outer ring recess group farther from the central axis of the base. The inner ring recess group includes a first recess, and the outer ring recess group includes a second recess and a third recess that are adjacent to each other and adjacent to the first recess. The extension of the line connecting the rotation center of the base and the center of the first recess passes between the second recess and the third recess.

[0017] Optionally, in the same set of recesses, the arc-shaped grooves of each recess are evenly arranged around the same circumference, and each recess has the same structure, and each arc-shaped groove has the same structure.

[0018] Another embodiment of this utility model provides a gas-phase reaction apparatus, characterized in that it includes:

[0019] Reaction chamber;

[0020] A base is disposed in the reaction chamber, and the base is the base provided in this application;

[0021] A gas injection mechanism is disposed opposite to the side of the base that has a bearing area, so as to eject process gas toward the base;

[0022] A rotary drive device is disposed in the reaction chamber in a dynamically sealed manner and fixedly connected to the middle of the base to drive the base to rotate around the rotation axis during the gas phase reaction.

[0023] As described above, the base and gas-phase reaction device of this invention have the following beneficial effects:

[0024] The base of this invention includes a support area for supporting a substrate. The support area includes a recess, and an arc-shaped groove is formed on the edge of the recess. The top opening of the arc-shaped groove includes a first end and a second end opposite to each other. The first acute angle α between the first end and the second end and the center of the support area where the arc-shaped groove is located is 85° to 95°, so as to reduce the temperature non-uniformity between the middle and the edge of the substrate caused by heat transfer from the sidewall of the support area to the substrate. At least one edge support is provided in the arc-shaped groove. The top surface of the edge support is flush with the top surface of the middle of the support area, so that when the substrate is placed on the support area, part of the edge of the substrate is suspended above the arc-shaped groove, and the suspended edge is supported by the edge support. By combining the arc-shaped groove with the edge support, the contact area between the edge area and the edge of the substrate is adjusted, thereby optimizing the heat transfer uniformity of the edge of the substrate. Attached Figure Description

[0025] Figure 1 The diagram shown is a front cross-sectional view of the gas-phase reaction device provided by this utility model.

[0026] Figure 2 Displayed as Figure 1 A top view of the base structure.

[0027] Figure 3 Displayed as Figure 2 A top view of the concave structure.

[0028] Figure 4 Displayed as Figure 2 A top view of the structure of the first concave group in the middle.

[0029] Figure 5 This is a schematic diagram of the load-bearing area of ​​the base provided in another embodiment of the present invention.

[0030] Figure 6 This is a schematic diagram of the structure of the bearing area in another alternative embodiment.

[0031] Component designation explanation

[0032] 1. Base; 11. Top surface; 12. Bottom surface; 100. Recess; 100-1. First recess; 100-2. Second recess; 100-3. Third recess; 101. First recess group; 102. Second recess group; 111. Internal bearing surface; 1110. Middle support; 112. Side bearing surface; 113. Arc groove; 1130. Side support; 1131. First end; 1132. Second end; 200. Substrate; 2. Heating device; 3. Rotary drive device; 4. Gas injection mechanism; 5. Reaction chamber. Detailed Implementation

[0033] The following specific examples illustrate the implementation of this utility model. Those skilled in the art can easily understand other advantages and effects of this utility model from the content disclosed in this specification. This utility model can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of this utility model.

[0034] This embodiment provides a gas-phase reaction apparatus, which can be, for example, a gas-phase deposition apparatus, specifically a chemical vapor deposition (CVD) apparatus or a physical vapor deposition (PVD) apparatus. The gas-phase deposition equipment 10 can be a plasma-enhanced chemical vapor deposition (PECVD) apparatus, a metal-organic chemical vapor deposition (MOCVD) apparatus, etc. This embodiment uses an MOCVD apparatus as an example for illustration. It should be understood that this apparatus is merely exemplary, and this invention is not limited to this type of apparatus.

[0035] like Figure 1 As shown, the gas-phase reaction apparatus of this invention has a reaction chamber 5, within which a base 1 for supporting a substrate 200 is disposed. The reaction chamber 5 is also equipped with a gas injection device for supplying process gas into the reaction chamber 5. This gas injection device is disposed opposite to the base 1; specifically, the outlet side of the gas injection device is disposed opposite to the top surface 11 of the base 1 for supporting the substrate 200. A heating device 2 is also disposed on the bottom surface 12 of the base 1, capable of heating the base 1 and, through heat transfer from the base 1, heating the substrate 200 it supports. Figure 1As shown, the gas phase reaction apparatus of this utility model also includes a rotary drive device 3, which is disposed in the reaction chamber 5 in a dynamic sealing manner and is fixedly connected to the middle of the base 1 to drive the base 1 to rotate around the rotation axis T2 during the gas phase reaction.

[0036] The cross-section of the reaction chamber 5 in the gas-phase reaction apparatus is generally circular or near-circular, or it can be rectangular or other structures known to those skilled in the art, which will not be elaborated here. The reaction chamber 5 is a vertical flow chamber with vertically inlet gas. The reaction chamber 5 can be an upright chamber where the gas injection mechanism 4 is positioned opposite the base 1, with the gas injection mechanism 4 located at the top and the base 1 at the bottom. This embodiment uses... Figure 1 The gas injection mechanism 4 is described using an example of a vertically oriented chamber with a circular cross-section for the reaction chamber 5 shown, and the gas injection mechanism 4 located at the top and the base 1 located at the bottom.

[0037] Reference Figure 1 and Figure 2 A gas injection mechanism 4 for supporting the substrate 200 to be processed is provided in the reaction chamber 5 and is disposed opposite to the base 1, for example, at the top of the reaction chamber 5, to inject gas into the reaction chamber 5. The base 1 is located below the gas injection mechanism 4. The gas injection mechanism 4 provided in this embodiment has an overall disc-shaped structure, wherein the gas outlet surface of the gas injection mechanism 4 faces the base 1.

[0038] Similarly, refer to Figure 1 As shown, a main axis T1 is defined. The main axis T1 is perpendicular to the gas outlet surface of the disc-shaped gas injection mechanism 4 and passes through the geometric center of the gas outlet surface of the gas injection mechanism 4. The main axis T1 can be parallel to or not parallel to the rotation axis T2 of the base 1. Preferably, the main axis T1 is parallel to the rotation axis T2 of the base 1 (i.e., the central axis of the top surface of the base 1). Preferably, the main axis T1 coincides with the rotation axis T2.

[0039] The top surface 11 of the base 1 includes a support area for supporting the substrate 200. The support area includes a recess 100, which is recessed from the top surface 11 to the bottom surface 12 of the base 1. The size and number of the recesses 100, as well as their distribution on the base 1, can be designed according to the size, thickness, and number of the substrate 200 that needs to be supported and held, as well as the size of the base 1. For a substrate 200 that is typically disc-shaped, the recess 100 is designed with a circular opening, and the opening size corresponds to the size of the substrate 200.

[0040] In an optional embodiment, a plurality of recesses 100 are formed on the top surface 11 of the base 1 along the same circumferential direction, and the plurality of recesses 100 in this circumferential direction form a recess group. Each recess group contains at least 3 recesses 100. In an optional embodiment, in the same recess group, the plurality of recesses 100 are evenly arranged along the rotation axis T2 of the base 1, that is, the spacing between adjacent recesses 100 is the same.

[0041] Example 1

[0042] In this embodiment of the gas phase reaction apparatus, the top surface 11 of the base 1 has two sets of recesses as an example for explanation. Figure 2 A top view of the base 1 in this embodiment is shown. It should be understood that in this utility model, "looking up" refers to the view direction from the bottom surface 12 of the base 1 to the top surface 11, and "looking down" refers to the view direction from the top surface 11 of the base 1 to the bottom surface 12.

[0043] like Figure 2 As shown, in this embodiment, a first set of recesses 101 and a second set of recesses 102 are formed on the top surface 11 of the base 1 along two different circumferences, a first circumference C1 and a second circumference C2. The diameter of the first circumference C1 is smaller than the diameter of the second circumference C2, meaning that the first set of recesses 101 is closer to the rotation center O of the base 1. The first set of recesses 101 contains 3 recesses 100, and the second set of recesses 102 contains 9 recesses 100.

[0044] To ensure efficient heat transfer to the substrate 200, the base 1 is made of a material with high thermal conductivity, such as graphite. Under process conditions, the rotary drive device 3 drives the base 1 to rotate around the central axis of its top surface. The process gas injected above the substrate 200 is dragged by the rotation of the base 1, forming a rotating airflow. Due to the difference in thermal conductivity between the substrate 200 and the base 1, and influenced by convection and radiation from the gas and temperature fields in the process environment, the temperature of the base 1 is higher than that of the substrate 200. The process gas flows along the incoming flow direction over the non-load-bearing surface of the base 1 that does not support the substrate 200 and is heated. As it flows past nearby substrates 200, it has a certain heating effect on those substrates 200, and this heating effect weakens along the incoming flow direction, thus exacerbating the temperature non-uniformity of the substrate 200.

[0045] In optional embodiments, such as Figure 2As shown, the first recess group 101 near the rotation center O of the base 1 has a first recess 100-1, and the second recess group 102 away from the rotation center O of the base 1 has a second recess 100-2 and a third recess 100-3. The second recess 100-2 and the third recess 100-3 are adjacent to each other and adjacent to the first recess 100-1. The extension of the line connecting the rotation center O of the base 1 and the center O' of the first recess 100-1 passes between the second recess 100-2 and the third recess 100-3. This results in the recesses 100 in the inner and outer recess groups being staggered, which optimizes the distribution of the recesses 100 on the base 1, optimizes the bearing area of ​​the top surface 11 of the base 1, and reduces the adverse effects on temperature uniformity caused by process gas flowing through the substrate 1 in the incoming flow direction.

[0046] In some specific embodiments, the substrate 200 can be 2 inches or 3 inches in size, and the diameter of the base 1 can be 380 millimeters. The opening diameter of each recess 100 can be slightly larger than 2 inches or slightly larger than 3 inches, or two sizes of recesses 100 can be simultaneously formed on the same base 1. Taking the arrangement of two recess groups as an example, the inner recess group has 3 recesses 100, and the outer recess group has 9 recesses 100.

[0047] In this embodiment of the invention, the flow direction of the rotating gas flow formed by the process gas is opposite to the rotation direction of the base 1.

[0048] In some specific embodiments, such as the MOCVD equipment for growing quaternary InGaAsP, the rotation speed of the base 1 is controlled at greater than or equal to 500 rpm, and the process temperature is above 600°C, such as 750°C or 1000°C.

[0049] When the substrate 200 is placed in the recess 100, the gap between the edge of the substrate 200 and the edge of the recess 100 is very small. The sidewall of the recess 100 will generate heat to the substrate 200. This heat transfer will cause the temperature at the edge of the substrate 200 to be significantly higher than the temperature in the middle. Especially under the centrifugal force of the base 1 being driven to rotate by the rotary drive device 3, especially under the centrifugal force of high-speed rotation as described above, some sidewalls of the substrate 200 will be closer to or even adhere to the sidewall of the recess 100, and the above-mentioned temperature effect will be more significant.

[0050] like Figure 2 and Figure 3 As shown, in this embodiment, the recess 100 includes an inner bearing surface 111 and an edge bearing surface 112 that are flush with and connected to each other on the top surface. An arc-shaped groove 113 is formed on the edge of the recess 100 from the top surface downwards, surrounding the inner bearing surface 111. The edge bearing surface 112 is located between the two ends of the arc-shaped groove 113. Figure 2 and Figure 3As shown, in this embodiment, the opening of the arc-shaped groove 113 in the recess 100 is a fan-shaped ring (i.e., part of a circular ring), and the center of the fan-shaped ring coincides with the center O′ of the recess 100.

[0051] like Figure 3 As shown, the top opening of the arc-shaped groove 113 includes a first end 1131 and a second end 1132 opposite to each other. The first acute angle α formed by the first line L1 connecting the first end 1131 and the center O′ of the recess 100 and the second line L2 connecting the second end 1132 and the center O′ of the recess 100 is 85° to 95°. This angle setting ensures the proportion of the arc-shaped groove 113 and the edge bearing surface 112, and ensures the uniformity of heat transfer from the recess 100 to the temperature of the substrate 200.

[0052] In an optional embodiment, to further optimize the heat transfer of the bearing area 100 to the temperature of the substrate 200, particularly the uniformity of the edge region of the substrate 200 suspended in the arc groove 113, multiple support members are provided within the bearing area. Figure 2 As shown, a plurality of side support members 1130 are provided in the aforementioned arc-shaped groove 113, and the top surface of the side support member 1130 is flush with the top surface of the center 111 of the bearing area 100. Optionally, the plurality of side support members 1130 are evenly distributed in the arc-shaped groove 113, for example, evenly distributed along a circumference within the arc-shaped groove 113. The number and distribution of the side support members 1130 can be set according to actual temperature simulation.

[0053] The edge support 1130 and the arc groove 113 work together to adjust the contact area between the edge of the bearing area 100 and the edge of the substrate 112, thereby optimizing the heat transfer uniformity of the substrate edge.

[0054] In optional embodiments, such as Figure 4 As shown, taking the inner ring recess group as an example, the second end 1132 of the arc groove 113 is closer to the rotation center O of the base 1 than the first end 1131. The line connecting the rotation center O of the base 1 and the center O′ of the recess 100 where the arc groove 113 is located forms a third line L3, and the angle β between the third line L3 and the aforementioned second line L2 is 40° to 70°.

[0055] In a further optional embodiment, the number of recesses on the top surface 11 of the base 1 is at least 2 and they are arranged sequentially from the inside to the outside around the rotation center O of the base 1. The aforementioned angle β of each recess 100 in the same recess group is consistent, and the first acute angle a is consistent.

[0056] In adjacent recess groups, the angle β of each recess 100 in the inner ring recess group closest to the rotation center O of the base 1 is smaller than the angle β of each recess 100 in the outer ring recess group furthest from the rotation center O of the base 1; in the recess group closest to the rotation center O of the base 1, the included angle β of each recess 100 is 40° to 50°. The setting of the above-mentioned angle β restricts the position of the arc groove 113 (i.e., the edge support surface) in each recess 100 relative to the rotation center O of the base 1, ensuring that the arc groove 113 is located on the windward side (high temperature side) of the process gas flow direction; at the same time, it also ensures the proportion of the arc groove 113 and the edge bearing surface 112, ensuring the uniformity of heat transfer from the recess 100 to the substrate 200 temperature.

[0057] When the substrate 200 is placed in the recess 100, it is supported by the internal bearing surface 111 and the edge bearing surface 112 of the recess 100, and part of the edge of the substrate 200 at the position of the arc groove 113 is suspended above the arc groove 113. During the vapor phase growth process, the rotary drive device 3 drives the base 1 to rotate, and the area where the edge bearing surface 112 of each recess 100 is located faces away from the direction of the process gas flow (i.e., the direction of the flow is from the position of the arc groove 113 to the position of the edge bearing surface 112). The gas flow entering the reaction chamber 5 is heated by the surface of the base 1. Due to the difference in thermal conductivity between the substrate 200 and the base 1, the temperature of the substrate 200 is lower than that of the base 1. The heating effect of the process gas flow on the substrate 200 is reduced as it flows through the substrate 200, resulting in a significant temperature difference between the area of ​​the substrate 200 away from the arc groove 113 and the area near the arc groove 113. The leeward side of the recess 100 is not grooved, while the windward side of the recess 100 forms an arc-shaped groove 113. Correspondingly, the substrate 200 in the corresponding leeward area is supported by the internal bearing surface 111 and the edge bearing surface 112 of the recess 100. Therefore, the heat transfer from the sidewall of the recess 100 on the leeward side can be used to compensate for the temperature of the substrate 200, thereby reducing the temperature difference between the middle and edge of the substrate 200, as well as between the windward and leeward sides.

[0058] In an optional embodiment, in the same set of recesses, each recess 100 is evenly arranged around the rotation axis T2 of the base 1, each recess 100 has the same structure, and the arc groove 113 of each recess 100 also has the same structure.

[0059] In the same set of recesses, the arc-shaped grooves of each recess are evenly arranged around the same circumference. Specifically, in an optional embodiment, among adjacent recesses 100 in the same set of recesses, the opening of the arc-shaped groove 113 of one recess 100 is located at a first position relative to the gas injection device, and the opening of the arc-shaped groove 113 of the other recess 100 is located at a second position relative to the gas injection device. Specifically, taking a disc-shaped gas injection device as an example, in Figure 1As shown in the top-down view, the first and second positions are two adjacent positions on the same circumference of the projection of the gas injection device. Furthermore, the first and second positions cover two adjacent recesses 100 in the same recess group on the top surface 11 of the base 1. During the rotation of the base 1 driven by the rotary drive device 3, the position of the arcuate groove 113 of one recess 100 relative to the gas injection device shifts from the first position to the second position. (Refer to...) Figure 2 For example, the arc groove 113 of the second recess 100-2 in the second recess group 102 is located in the first position, and the arc groove 113 of the third recess 100-3 is located in the second position. When the rotary drive device 3 drives the base 1 to rotate, at a certain moment, the arc groove 113 of the second recess 100-2 is transferred to the second position.

[0060] In an optional embodiment, the radial width of the top opening of the arc groove 113 (i.e., the difference in radial distance between the inner and outer arc lines of the arc groove 113) does not exceed 10% of the radial length of the area enclosed by the bottom edge of the recess 100. For example, for a recess 100 that holds a 2-inch or 3-inch wafer, the maximum radial width of the top opening of the arc groove 113 is 7 mm. If the radial width of the top opening of the arc groove 113 is too large, the area of ​​the bonding surface used to support the wafer is reduced, and the portion that directly contacts the substrate 200 for heat transfer is reduced, which is detrimental to temperature uniformity.

[0061] Example 2

[0062] This embodiment also provides a base for a gas-phase reaction apparatus, disposed within the reaction chamber of the apparatus, for supporting a substrate to be deposited as a thin film. In this embodiment, the top surface of the base also includes a support area, which comprises a recess formed by the indentation from the top surface of the base to the bottom surface. The similarities between this base and the support area and those in the above embodiments will not be repeated; the differences are as follows:

[0063] like Figures 5 to 6 As shown, a central support member 1110 is provided in the middle portion 111 of the bearing area 100 in this embodiment. The central support member 1110 is preferably formed as a plurality of support columns. The support columns can be columnar structures protruding upward from the top surface of the middle portion 111, or they can be formed as a plurality of columnar structures distributed in the middle portion 111 of the bearing area 100, with open spaces between adjacent columnar structures, and the top surface of the plurality of columnar structures forming the top surface of the middle portion of the bearing area.

[0064] In an optional embodiment of this example, a plurality of central support members 1110 are distributed on at least one circumference of the central portion 11 of the bearing area 100. For example... Figure 5As shown, a plurality of central support members 1110 are distributed on two different circumferences from the middle of the central portion 111 towards the edge, and no central support member 1110 is provided at the center of the bearing area 100. The plurality of central support members 1110 are evenly distributed on the circumference. In another optional embodiment, as... Figure 6 As shown, a central support member 1110 is provided at the center of the bearing area 100, and the remaining central support members 1110 are distributed on two circumferences of the surface of the bearing area 100. Furthermore, the same number of support columns are distributed on each circumference, and the central support members 1110 are evenly distributed on the circumference.

[0065] The above embodiments are merely illustrative of the principles and effects of this utility model and are not intended to limit the scope of this utility model. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of this utility model. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in this utility model should still be covered by the claims of this utility model.

Claims

1. A susceptor, comprising a plurality of loading areas for loading substrates, wherein, each of the loading areas comprises a recess, a bottom surface of the recess comprises a central portion and a peripheral portion surrounding the central portion; an arc-shaped slot is formed in each of the peripheral portions, a width of the arc-shaped slot is not more than 10% of a radial length of an area surrounded by a top surface edge of the loading area; the support member further comprises a plurality of central support members, the central support members are located in the central portion of the loading area, the central support members are formed as protruding structures protruding upward from a top surface of the central portion of the loading area, or the central support members are formed as a plurality of columnar structures distributed in the central portion of the loading area, adjacent columnar structures are hollowed out, a sum of areas of top surfaces of the central support members is greater than a sum of areas of top surfaces of the peripheral support members.

2. The susceptor of claim 1, wherein in a direction from an edge of the central portion to a center, a vertical distance between a plane where the top surface of the central support member is located and a top surface of the loading area gradually decreases, and the vertical distance is greater than or equal to 0.

3. The susceptor of claim 2, wherein, the central support members are distributed on different circumferences around the center of the loading area from inside to outside, top surfaces of the support members located on a same circumference are located in a same plane, and the support members located on the same circumference are uniformly distributed on the circumference.

4. The base of claim 2, wherein, a center of the arc-shaped slot coincides with the center of the loading area.

5. The base of claim 1, wherein, a top surface opening of the arc-shaped slot comprises opposite first and second ends, a first acute angle a between the first end and the second end and a line connecting the center of the loading area where the arc-shaped slot is located is 85°-95°.

6. The base of claim 1, wherein, the second end is closer to a rotation center of the susceptor than the first end, an angle β between a line connecting the rotation center of the susceptor and the center of the loading area where the arc-shaped slot is located and a line connecting the rotation center of the susceptor and the second end is 40°-70°.

7. The susceptor of claim 6, wherein a number of the loading areas is at least 3, and the loading areas are arranged around a central axis of the susceptor from inside to outside to form at least one recess group, each of the recess groups comprises at least 3 recesses; 8. The base of claim 1, wherein, when a number of the recess groups is at least 2, in adjacent recess groups, a number of recesses in an inner ring recess group close to the central axis of the susceptor is less than a number of recesses in an outer ring recess group away from the central axis of the susceptor, the inner ring recess group comprises a first recess, the outer ring recess group comprises a second recess and a third recess adjacent to each other and adjacent to the first recess, and an extension line of a line connecting the rotation center of the susceptor and a center of the first recess passes between the second recess and the third recess. in a same recess group, arc-shaped slots of the recesses are uniformly arranged around a same circumferential direction, the recesses have a same structure, and the arc-shaped slots have a same structure.

9. The susceptor of claim 8, wherein, comprising:

10. A gas phase reaction apparatus characterized by comprising: a reaction chamber; a susceptor arranged in the reaction chamber, the susceptor is the susceptor according to any one of claims 1-9; a gas injection mechanism arranged opposite to a side of the susceptor provided with the loading area to spray process gas toward the susceptor; ​ A rotary driving device is arranged in a dynamic sealing manner in the reaction chamber and is fixedly connected to the middle part of the susceptor to drive the susceptor to rotate around the rotation axis during the gas phase reaction.

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