Memory, electronic equipment and detection system

Abstract

The utility model discloses a memory, electronic equipment and a detection system. The memory comprises a substrate, at least one semiconductor device, an encapsulation layer and an optical function layer. Wherein one side, deviating from the substrate, of the packaging layer is provided with the optical function layer, and the optical function layer can store radiation energy after being irradiated by rays and release visible light under the excitation of external exciting light, so that the X-ray radiation dose borne by the memory can be reflected based on the visible light released by the optical function layer. Therefore, in the production and quality inspection process of the memory, the X-ray radiation dose borne by the memory can be detected in time, and quality judgment and risk identification are performed on the memory according to the X-ray radiation dose, so that the memory can be prevented from being damaged by excessive radiation, and the quality control precision and efficiency of the memory can be improved.

Description

Technical Field

[0001] This application relates to the field of memory, and in particular to a memory, electronic device and detection system. Background Technology

[0002] A memory is a device used to store data.

[0003] Currently, the production and application of memory involves multiple quality control processes. Some of these processes use X-rays to inspect the internal structure of the memory. However, accumulated X-ray doses can have irreversible effects on memory performance, and prolonged exposure to excessive X-ray radiation can lead to chip failure. Functional testing is typically used to screen memory chips that fail during the quality control process.

[0004] However, the aforementioned functional tests cannot directly detect and record the radiation dose of X-rays received by the memory, resulting in a greater risk of potential damage to memory performance due to X-rays, and poor accuracy and efficiency in memory quality control. Summary of the Invention

[0005] This application provides a memory, an electronic device, and a detection system. The technical solution is as follows:

[0006] According to one aspect of this application, a memory is provided, the memory comprising: a substrate, at least one semiconductor device, a packaging layer, and an optical functional layer;

[0007] The at least one semiconductor device is located on one side of the substrate;

[0008] The encapsulation layer is located on the side of the at least one semiconductor device away from the substrate, and the encapsulation layer covers the at least one semiconductor device;

[0009] The optical functional layer is located on the side of the encapsulation layer opposite to the substrate. The orthographic projection of the optical functional layer on the substrate overlaps with the orthographic projection of the at least one semiconductor device on the substrate. The optical functional layer is used to store radiant energy after being irradiated by radiation and to release visible light when excited by external excitation light.

[0010] Optionally, the at least one semiconductor device includes: a control chip and a memory unit;

[0011] The orthographic projection of the control chip on the substrate is located within the orthographic projection of the optical functional layer on the substrate, and the orthographic projection of the storage unit on the substrate is located within the orthographic projection of the optical functional layer on the substrate.

[0012] Optionally, the optical functional layer includes: a first part and a second part that are separately disposed, wherein the orthographic projection of the control chip on the substrate is located within the orthographic projection of the first part on the substrate, and the orthographic projection of the storage unit on the substrate is located within the orthographic projection of the second part on the substrate.

[0013] Optionally, the optical functional layer covers the upper surface of the encapsulation layer opposite to the substrate.

[0014] Optionally, the optical functional layer is a film structure made of quartz or feldspar material.

[0015] Optionally, the at least one semiconductor device includes: a control chip and a memory unit;

[0016] The control chip is fixed on the substrate and electrically connected to the substrate; the memory further includes a first adhesive layer and connecting leads, the memory unit is fixed on the substrate through the first adhesive layer, and the memory unit is electrically connected to the substrate through the connecting leads.

[0017] Optionally, the storage unit includes: a plurality of storage chips stacked along a direction perpendicular to the substrate, and the plurality of storage chips in the storage unit are staggered along a direction parallel to the substrate;

[0018] The number of connecting leads is multiple, and each of the multiple connecting leads corresponds to a multiple memory chip. One end of each connecting lead is electrically connected to the substrate, and the other end of each connecting lead is electrically connected to the corresponding memory chip.

[0019] Optionally, the memory further includes a second adhesive layer located between two adjacent memory chips, and the second adhesive layer is bonded to each of the two adjacent memory chips.

[0020] On the other hand, an electronic device is provided, comprising: a device body, and a memory installed inside the device body, the memory being any of the aforementioned memories.

[0021] On the other hand, a detection system is provided, comprising: a detection device, and any of the aforementioned memories, the detection device being used to detect radiant energy stored in the optical functional layer of the memory.

[0022] Optionally, the detection device includes: a control component, an excitation component, and a receiving component;

[0023] The control component is configured to: after controlling the excitation component to provide excitation light to the optical functional layer, control the receiving component to receive visible light emitted by the optical functional layer, so as to determine the radiant energy stored in the optical functional layer.

[0024] The beneficial effects of the technical solutions provided in this application include at least the following:

[0025] A photoelectric functional layer is disposed on the side of the encapsulation layer facing away from the substrate. This photoelectric functional layer can store radiation energy after being irradiated by X-rays and release visible light when excited by external excitation light. Therefore, the X-ray radiation dose received by the memory can be reflected based on the visible light released by the photoelectric functional layer. In this way, during the production and quality inspection process of the memory, the X-ray radiation dose received by the memory can be detected in a timely manner, and the quality judgment and risk identification of the memory can be performed based on the X-ray radiation dose. This can avoid excessive radiation damage to the memory, thereby improving the accuracy and efficiency of memory quality control. Attached Figure Description

[0026] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0027] Figure 1 This is a schematic diagram of the structure of a memory provided in an embodiment of this application;

[0028] Figure 2 This is a schematic diagram of another memory structure provided in an embodiment of this application;

[0029] Figure 3 This is a top view schematic diagram of a memory structure provided in an embodiment of this application;

[0030] Figure 4 yes Figure 3 A schematic cross-sectional view of the provided memory at A1-A1;

[0031] Figure 5 This is a schematic diagram of a detection system provided in an embodiment of this application;

[0032] Figure 6 This is a flowchart of a method for detecting X-ray radiation dose of a memory provided in an embodiment of this application.

[0033] The accompanying drawings illustrate specific embodiments of this application, which will be described in more detail below. These drawings and descriptions are not intended to limit the scope of the concept in any way, but rather to illustrate the concept of this application to those skilled in the art through reference to particular embodiments. Detailed Implementation

[0034] To make the objectives, technical solutions, and advantages of this application clearer, the embodiments of this application will be described in further detail below with reference to the accompanying drawings.

[0035] Memory chips are exposed to X-rays in various applications, such as the production of memory chips in smartphones and mobile devices, automotive electronics and autonomous driving systems, servers and data centers, industrial control systems, and aerospace and military equipment. Taking smartphone memory chips as an example, during the installation of memory chips on the smartphone's motherboard, X-ray inspection can detect the internal structure and identify potential defects. For instance, X-ray inspection can check the soldering of the memory chips. However, excessive X-ray radiation can lead to degradation or failure of the memory's internal circuitry and storage cells.

[0036] However, in mass production, current memory quality control relies on random sampling and functional testing, lacking individualized screening of the cumulative X-ray dose for each memory. This results in memory with excessive cumulative X-ray dose not being screened out in a timely manner, leading to low accuracy and efficiency in memory quality control, and consequently, poor reliability of memory entering the market.

[0037] This application provides a memory, please refer to... Figure 1 , Figure 1 This is a schematic diagram of the structure of a memory provided in an embodiment of this application. The memory 10 includes: a substrate 11, at least one semiconductor device 12, an encapsulation layer 13, and an optical functional layer 14.

[0038] The memory 10 provided in this application embodiment can be Universal Flash Storage (UFS), which has the characteristics of high-speed data transmission, low latency, low power consumption and high reliability. However, this application is not limited to the type of memory 10.

[0039] The substrate 11 is used to carry the semiconductor device 12 in the memory 10. For example, the substrate 11 can be a circuit board, that is, circuitry can be disposed in the substrate 11. Figure 1 (Not shown), the circuit is electrically connected to at least one semiconductor device 12. The side of the substrate 11 not provided with the semiconductor device 12 may have a plurality of solder balls 111, through which the memory can be electrically connected to external electronic components.

[0040] At least one semiconductor device 12 is located on one side of the substrate 11. The semiconductor device 12 can be a chip with various functions, such as a memory chip and a control chip. Excessive X-ray radiation can easily lead to performance degradation or failure of the semiconductor device 12. For example, Figure 1The two semiconductor devices 12 shown can be two semiconductor devices with different functions. It should be noted that... Figure 1 The specific structure of the semiconductor device 12 is not shown, but this application does not limit it.

[0041] The encapsulation layer 13 is located on the side of at least one semiconductor device 12 facing away from the substrate 11, and the encapsulation layer 13 covers at least one semiconductor device 12. The encapsulation layer 13 can be used to fix and encapsulate at least one semiconductor device 12, thereby providing protection for the semiconductor device 12. For example, the material of the encapsulation layer 13 may include epoxy resin.

[0042] The optical functional layer 14 is located on the side of the encapsulation layer 13 away from the substrate 11. The orthographic projection of the optical functional layer 14 on the substrate 11 overlaps with the orthographic projection of at least one semiconductor device 12 on the substrate 11. The optical functional layer 14 is used to store radiant energy after being irradiated by radiation and to release visible light when excited by external excitation light.

[0043] In this embodiment, the memory 10 is exposed to X-ray radiation during quality inspection. The optical functional layer 14 overlaps with the orthographic projection of at least one semiconductor device 12, so the radiation energy stored in the optical functional layer 14 can reflect the X-ray radiation dose received by the at least one semiconductor device 12. Here, the optical functional layer 14 can be made of a material with optically stimulated luminescence (OSL) effect. Excitation of the optical functional layer 14 by external excitation light releases the stored radiation energy in the form of light. Measuring the released visible light determines the stored radiation energy of the optical functional layer 14. That is, the optical functional layer 14 can serve as a medium for detecting the X-ray radiation dose received by the memory 10. For example, the external excitation light can be laser light or ultraviolet light.

[0044] Therefore, this application can perform quality judgment and risk identification of memory 10 based on the radiation energy stored in optical functional layer 14. On the one hand, it can avoid the problem that functional tests cannot detect the potential risk of excessive radiation, and on the other hand, it can avoid the problem of poor detection accuracy of random sampling.

[0045] In summary, this application provides a memory device in which an optical functional layer is disposed on the side of the encapsulation layer facing away from the substrate. This optical functional layer can store radiation energy after being irradiated by X-rays and release visible light when excited by external excitation light. Therefore, the X-ray radiation dose received by the memory device can be reflected based on the visible light released by the optical functional layer. Thus, during the production and quality inspection process of the memory device, the X-ray radiation dose received by the memory device can be detected in a timely manner, and the quality of the memory device can be judged and risks identified based on the X-ray radiation dose. This can prevent excessive radiation damage to the memory device, thereby improving the accuracy and efficiency of memory device quality control.

[0046] Optionally, the optical functional layer 14 is a film structure made of quartz or feldspar. The quartz or feldspar material used in the optical functional layer 14 has an optically stimulated luminescence effect, so that the optical functional layer 14 can store radiant energy after being irradiated by radiation and release visible light when excited by external excitation light.

[0047] Alternatively, please refer to Figure 2 , Figure 2 This is a schematic diagram of another memory structure provided in an embodiment of this application. At least one semiconductor device 12 includes: a control chip 12a and a memory cell 12b.

[0048] The storage unit 12b is used to perform functions such as reading data, writing data, and erasing data. The control chip 12a is electrically connected to the storage unit 12b so that the control chip 12a can be used to control the operations performed by the storage unit 12b, such as reading, erasing, and programming operations.

[0049] In some exemplary embodiments, the control chip 12a may also be configured to manage various functions relating to data stored or to be stored in the storage unit 12b, including but not limited to bad block management, garbage collection, logical address to physical address translation, wear leveling, etc. Optionally, the control chip 12a may also be configured to handle error correction relating to data read from or written to the storage unit 12b. The control chip 12a may also perform any other suitable function, such as formatting the memory 10.

[0050] The orthographic projection of the control chip 12a on the substrate 11 is located within the orthographic projection of the optical functional layer 14 on the substrate 11, and the orthographic projection of the storage unit 12b on the substrate 11 is located within the orthographic projection of the optical functional layer 14 on the substrate 11. That is, during the X-ray irradiation of the memory, the X-ray radiation energy stored in the optical functional layer 14 can reflect the X-ray radiation dose received by the control chip 12a and the storage unit 12b.

[0051] Therefore, the accuracy of X-ray radiation dose detection based on the optical functional layer 14 is relatively high, which can avoid excessive radiation damage to the control chip 12a and the storage unit 12b, and thus reduce the risk of failure of the control chip 12a and the storage unit 12b in the memory 10 after detection.

[0052] It should be noted that, Figure 2 The memory 10 shown includes two storage units 12b, but the number of storage units 12b in the memory 10 is not limited in this embodiment and can be set according to storage requirements.

[0053] In this application, the structure of the optical functional layer includes various cases, which are described below with two exemplary embodiments:

[0054] In a first exemplary embodiment, the optical functional layer can be a monolithic structure; please refer to [reference needed]. Figure 2 The optical functional layer 14 covers the encapsulation layer 13 away from the upper surface of the substrate 11. In this case, the manufacturing process of the optical functional layer 14 is relatively simple, and the optical functional layer 14 can reflect the X-ray radiation dose received by each area of ​​the entire memory 10.

[0055] In a second exemplary embodiment, the optical functional layer can be a discrete structure, please refer to... Figure 3 and Figure 4 , Figure 3 This is a top view schematic diagram of a memory structure provided in an embodiment of this application. Figure 4 yes Figure 3 A cross-sectional schematic diagram of the provided memory at A1-A1. The optical functional layer 14 includes: a first portion 141 and a second portion 142 separately disposed, wherein the orthographic projection of the control chip 12a on the substrate 11 is located within the orthographic projection of the first portion 141 on the substrate 11, and the orthographic projection of the memory cell 12b on the substrate 11 is located within the orthographic projection of the second portion 142 on the substrate 11.

[0056] During X-ray irradiation of the memory, the X-ray radiation energy stored in the first portion 141 reflects the X-ray radiation dose received by the control chip 12a. The X-ray radiation energy stored in the second portion 142 reflects the X-ray radiation dose received by the storage unit 12b. Therefore, determining the X-ray radiation dose received by the control chip 12a based on the detected light signal of the first portion 141 is highly accurate, and determining the X-ray radiation dose received by the storage unit 12b based on the detected light signal of the second portion 142 is also highly accurate. This avoids excessive radiation damage to the control chip 12a and the storage unit 12b, thereby reducing the risk of failure of the control chip 12a and the storage unit 12b in the memory 10 after detection.

[0057] It should be noted that, Figure 3 An exemplary arrangement of a control chip 12a and memory cells 12b in a memory 10 is shown. In a direction parallel to the substrate 11, the control chip 12a and memory cells 12b are arranged in a row, with the control chip 12a located between two memory cells 12b. Based on this, in a direction parallel to the substrate 11, the first portion 141 is also located between two second portions 142. However, this application is not limited to this arrangement.

[0058] The other structures of memory 10 are described below:

[0059] Alternatively, please refer to Figure 2 At least one semiconductor device 12 includes: a control chip 12a and a memory unit 12b.

[0060] The control chip 12a is fixed on the substrate 11 and electrically connected to the substrate 11. Exemplarily, the substrate 11 has pins, and the control chip 12a is electrically connected to the circuitry in the substrate 11 through these pins. In this embodiment, an adhesive layer can also be provided between the control chip 12a and the substrate 11 for fixation.

[0061] The memory 10 further includes a first adhesive layer 15 and connecting leads 16. The memory cell 12b is fixed to the substrate 11 via the first adhesive layer 15, and the memory cell 12b is electrically connected to the substrate 11 via the connecting leads 16. One side of the first adhesive layer 15 is bonded to the memory cell 12b, and the other side of the first adhesive layer 15 is bonded to the substrate, thereby improving the stability of the memory cell 12b on the substrate 11. The connecting leads 16 are used to electrically connect the memory cell 12b to the circuitry in the substrate 11, thereby enabling the control chip 12a to electrically connect to the memory cell 12b, allowing the control chip 12a to control various operations of the memory cell 12b.

[0062] Optionally, the storage cell 12b includes a plurality of storage chips 121 stacked along a direction perpendicular to the substrate 11, and the plurality of storage chips 121 in the storage cell 12b are staggered along a direction parallel to the substrate 11. The arrangement of multiple storage chips 121 in the storage cell 12b increases storage capacity, and the stacking arrangement improves the utilization of vertical space in the memory 10, facilitating high integration and miniaturization of the memory 10. The staggered arrangement exposes the connection points of the storage chips 121, facilitating the connection of connection leads 16.

[0063] There are multiple connecting leads 16, each corresponding to one of the memory chips 121. One end of each connecting lead 16 is electrically connected to the substrate 11, and the other end is electrically connected to the corresponding memory chip 121. In this way, each memory chip 121 in the memory cell 12b can transmit electrical signals through the corresponding connecting lead 16.

[0064] Optionally, the memory 10 further includes a second adhesive layer 17 located between two adjacent memory chips 121, and the second adhesive layer 17 is bonded to the two adjacent memory chips 121 respectively. The second adhesive layer 17 can improve the structural stability of the stacked memory chips 121. For example, the second adhesive layer 17 can be the adhesive layer of the sub-band of the memory chip 121 at the factory, and this embodiment of the application does not limit this.

[0065] In summary, this application provides a memory device in which an optical functional layer is disposed on the side of the encapsulation layer facing away from the substrate. This optical functional layer can store radiation energy after being irradiated by X-rays and release visible light when excited by external excitation light. Therefore, the X-ray radiation dose received by the memory device can be reflected based on the visible light released by the optical functional layer. Thus, during the production and quality inspection process of the memory device, the X-ray radiation dose received by the memory device can be detected in a timely manner, and the quality of the memory device can be judged and risks identified based on the X-ray radiation dose. This can prevent excessive radiation damage to the memory device, thereby improving the accuracy and efficiency of memory device quality control.

[0066] On the other hand, embodiments of this application also provide an electronic device, which includes: a device body and a memory installed inside the device body, wherein the memory is any of the memory provided in the above embodiments. For example, the electronic device can be a mobile phone, tablet computer, laptop computer, or other device with a memory.

[0067] Since the electronic device includes the memory provided in the above embodiments, it can also have similar effects, that is, the quality control of the electronic device has better accuracy and efficiency.

[0068] On the other hand, this application also provides a detection system (please refer to...). Figure 5 , Figure 5 This is a schematic diagram of a detection system provided in an embodiment of this application. The detection system 00 includes: a detection device 20 and a memory 10 provided in any of the above embodiments. The detection device 20 is used to detect the radiation energy stored in the optical functional layer 14 in the memory 10.

[0069] Optionally, the detection device 20 includes a control component 21, an excitation component 22, and a receiving component 23.

[0070] The control component 21 is configured such that after the excitation component 22 provides excitation light L1 to the optical functional layer 14, the receiving component 23 receives visible light L2 emitted by the optical functional layer 14 to determine the radiant energy stored in the optical functional layer 14. That is, the excitation component 22 provides excitation light L1 to the optical functional layer 14, and the receiving component 23 receives visible light L2 emitted by the optical functional layer 14.

[0071] In one exemplary embodiment, please refer to Figure 6 , Figure 6 This is a flowchart of a method for detecting X-ray radiation dose of a memory according to an embodiment of this application. The detection method is used in the control component of the aforementioned detection device, and includes:

[0072] Step 601: After the X-ray inspection of the memory is completed, control the excitation component to provide excitation light to the optical functional layer of the memory.

[0073] The memory is the memory provided in any of the above embodiments, that is, the memory integrates an optical functional layer, which can serve as a medium for detecting the X-ray radiation dose received by the memory. For example, the excitation light provided by the excitation component can be laser light or ultraviolet light.

[0074] Step 602: Control the receiving component to receive visible light released by the optical functional layer of the memory, and obtain the intensity of the visible light received by the receiving component.

[0075] The optical functional layer can release its stored radiative energy in the form of visible light when excited by external excitation light. Therefore, the control component can determine the intensity of the visible light released by the optical functional layer through the receiving component.

[0076] Step 603: Determine the X-ray radiation dose received by the memory based on the intensity of visible light received by the receiving component, and determine whether the X-ray radiation dose received by the memory is less than a preset threshold.

[0077] The optical functional layer is a film layer with optically stimulated luminescence (OSL). Therefore, the intensity of the visible light emitted by the optical functional layer is positively correlated with the X-ray radiation dose stored in the optical functional layer. Thus, the control component can convert the intensity of the acquired light signal into data representing the accumulated X-ray radiation dose. The preset threshold is a pre-defined threshold for the X-ray radiation dose.

[0078] Step 604: After the X-ray radiation dose received by the memory is less than a preset threshold, the memory is determined to be a qualified product.

[0079] If the X-ray radiation dose is less than the preset threshold, the memory's performance is within a safe range, and the memory can proceed to the next step, such as packaging and marketing.

[0080] Step 605: If the X-ray radiation dose received by the memory exceeds a preset threshold, the memory is determined to be a defective product.

[0081] When the X-ray radiation dose exceeds the preset threshold, the memory is at high risk of performance failure. Defective memory can be scrapped to prevent it from entering the market.

[0082] Therefore, the aforementioned detection system can use this detection method to detect the X-ray radiation dose of each memory chip and achieve automated screening. This allows chips with excessive X-ray doses to be screened out and scrapped in a timely manner, ensuring the reliability of the memory chips entering the market and thus improving the accuracy and efficiency of memory chip quality control.

[0083] In summary, this application provides a detection system in which a light functional layer is disposed on the side of the encapsulation layer facing away from the substrate. The detection device can determine the X-ray radiation dose received by the memory based on the visible light emitted by this light functional layer. Thus, during the production and quality inspection process of the memory, the detection device can promptly detect the X-ray radiation dose received by the memory and perform quality judgment and risk identification based on the X-ray radiation dose, thereby avoiding excessive radiation damage to the memory and improving the accuracy and efficiency of memory quality control.

[0084] It should be noted that the dimensions of layers and regions may be exaggerated in the accompanying drawings for clarity. Furthermore, it is understood that when an element or layer is referred to as being "on" another element or layer, it can be directly on the other element, or there may be intermediate layers. Additionally, it is understood that when an element or layer is referred to as being "below" another element or layer, it can be directly below the other element, or there may be more than one intermediate layer or element. Furthermore, it is also understood that when a layer or element is referred to as being "between" two layers or two elements, it can be the only layer between the two layers or two elements, or there may be more than one intermediate layer or element. Similar reference numerals throughout indicate similar elements.

[0085] In this application, the terms "first," "second," "third," and "fourth" are used for descriptive purposes only and should not be construed as indicating or implying relative importance. The term "multiple" means two or more, unless otherwise expressly defined.

[0086] The above description is merely an optional embodiment of this application and is not intended to limit this application. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A memory, characterized in that, The memory includes: a substrate, at least one semiconductor device, a packaging layer, and an optical functional layer; The at least one semiconductor device is located on one side of the substrate; The encapsulation layer is located on the side of the at least one semiconductor device away from the substrate, and the encapsulation layer covers the at least one semiconductor device; The optical functional layer is located on the side of the encapsulation layer opposite to the substrate. The orthographic projection of the optical functional layer on the substrate overlaps with the orthographic projection of the at least one semiconductor device on the substrate. The optical functional layer is used to store radiant energy after being irradiated by radiation and to release visible light when excited by external excitation light.

2. The memory according to claim 1, characterized in that, The at least one semiconductor device includes: a control chip and a memory unit; The orthographic projection of the control chip on the substrate is located within the orthographic projection of the optical functional layer on the substrate, and the orthographic projection of the storage unit on the substrate is located within the orthographic projection of the optical functional layer on the substrate.

3. The memory according to claim 2, characterized in that, The optical functional layer includes: a first part and a second part that are separately disposed, wherein the orthographic projection of the control chip on the substrate is located within the orthographic projection of the first part on the substrate, and the orthographic projection of the storage unit on the substrate is located within the orthographic projection of the second part on the substrate.

4. The memory according to claim 1, characterized in that, The optical functional layer covers the upper surface of the encapsulation layer that is away from the substrate.

5. The memory according to any one of claims 1-4, characterized in that, The optical functional layer is a film structure made of quartz or feldspar materials.

6. The memory according to any one of claims 1-4, characterized in that, The at least one semiconductor device includes: a control chip and a memory unit; The control chip is fixed on the substrate and electrically connected to the substrate; the memory further includes a first adhesive layer and connecting leads, the memory unit is fixed on the substrate through the first adhesive layer, and the memory unit is electrically connected to the substrate through the connecting leads.

7. The memory according to claim 6, characterized in that, The storage unit includes a plurality of storage chips stacked along a direction perpendicular to the substrate, and the plurality of storage chips in the storage unit are staggered along a direction parallel to the substrate. The number of connecting leads is multiple, and each of the multiple connecting leads corresponds to a multiple memory chip. One end of each connecting lead is electrically connected to the substrate, and the other end of each connecting lead is electrically connected to the corresponding memory chip.

8. The memory according to claim 7, characterized in that, The memory further includes a second adhesive layer located between two adjacent memory chips, and the second adhesive layer is bonded to each of the two adjacent memory chips.

9. An electronic device, characterized in that, It includes: a device body, and a memory installed inside the device body, the memory being the memory according to any one of claims 1 to 8.

10. A detection system, characterized in that, include: A detection device, and a memory according to any one of claims 1 to 8, wherein the detection device is used to detect the radiative energy stored in the optical functional layer of the memory.

11. The detection system according to claim 10, characterized in that, The detection device includes: a control component, an excitation component, and a receiving component; The control component is configured to: after controlling the excitation component to provide excitation light to the optical functional layer, control the receiving component to receive visible light emitted by the optical functional layer, so as to determine the radiant energy stored in the optical functional layer.

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