High-power rapid heat dissipation type MOS device

Abstract

The utility model provides a high-power rapid heat dissipation type MOS device, and relates to the technical field of semiconductor devices. The LED packaging structure comprises a packaging shell, four rapid heat dissipation mechanisms playing a heat dissipation role are arranged in the packaging shell, each rapid heat dissipation mechanism comprises a heat conduction pipe, the outer surface of each heat conduction pipe is fixedly connected with a heat absorption film, the top end of each heat conduction pipe is fixedly connected with a cooling fin, and the cooling fins are fixedly connected with the packaging shell. The bottom surface of the cooling fin is fixedly connected with a heat insulation pad, and the top surface of the packaging housing is provided with a mounting hole. According to the utility model, through the arrangement of the heat conduction pipe and the cooling fins, the heat absorption film can absorb heat generated in the packaging shell into the heat conduction pipe and transmit the heat into the cooling fins through the heat conduction pipe, and the cooling fins can rapidly volatilize the heat to the outside of the device, so that rapid cooling of the MOS tube is realized; normal operation of the MOS tube is prevented from being affected by too high internal temperature of the device, and the service life of the device is prolonged.

Description

Technical Field

[0001] This utility model relates to a heat dissipation type MOS device, specifically a high-power fast heat dissipation type MOS device, belonging to the field of semiconductor device technology. Background Technology

[0002] MOSFETs are also commonly known as field-effect transistors. Currently, some MOSFETs are usually encapsulated and fixed with adhesive. However, because the casing of the MOSFET is tightly connected, the components inside the casing cannot dissipate heat well. In particular, the heat generated by high-power MOSFETs during operation is greater and cannot be dissipated quickly, which can easily lead to damage to the MOSFET.

[0003] According to patent CN212517180U, a high-power fast heat dissipation MOS device is disclosed, including a MOSFET chip, a fast recovery diode, a ceramic thermally conductive body, a source pin, a drain pin, and a gate pin; a first strip groove, a second strip groove, and a third groove are formed on one surface of the ceramic thermally conductive body, and the first strip groove, the second strip groove, and the third groove are respectively filled with a first conductive strip, a second conductive strip, and a conductive block.

[0004] The above-mentioned solutions can reduce the thermal resistance of MOSFETs and improve device reliability by adjusting the component settings. However, these solutions are not effective in improving the heat dissipation of MOSFETs. High-power MOSFETs generate a lot of heat during operation. If this heat is not dissipated in time, it will seriously affect the normal use of the MOSFETs and may even cause them to burn out. Therefore, we provide a high-power fast heat dissipation MOSFET device to solve the above problems. Utility Model Content

[0005] (a) Technical problems to be solved

[0006] The purpose of this invention is to provide a high-power, fast-heat-dissipating MOS device to solve the above-mentioned problems, thereby addressing the issue that the heat dissipation efficiency inside common high-power MOS transistors in the prior art is relatively low and cannot meet the requirements for normal device use.

[0007] (II) Technical Solution

[0008] This utility model is achieved through the following technical solution: a high-power fast heat dissipation MOS device, including a package housing, the inside of which is provided with four fast heat dissipation mechanisms for heat dissipation, each fast heat dissipation mechanism including a heat-conducting pipe, a heat-absorbing film fixedly connected to the outer surface of the heat-conducting pipe, a heat sink fixedly connected to the top of the heat-conducting pipe, a heat insulation pad fixedly connected to the bottom surface of the heat sink, and a mounting hole opened on the top surface of the package housing.

[0009] Preferably, the heat pipe passes through the encapsulation shell and is fixedly connected to the encapsulation shell, and the heat insulation pad is fixedly connected to the mounting hole. The heat insulation pad can protect the encapsulation shell and prevent the heat pipe from being damaged by excessive temperature.

[0010] Preferably, a MOSFET chip is fixedly installed inside the package housing, and a heat dissipation pad is fixedly connected to the bottom surface of the package housing. The MOSFET chip is the core component for the operation of the MOSFET.

[0011] Preferably, the outer surface of the package housing is provided with a gate pin, a drain pin, and a source pin. The MOSFET chip is electrically connected to the gate pin, the drain pin, and the source pin via a data line. The gate pin, the drain pin, and the source pin can provide signal transmission for the MOSFET chip.

[0012] Preferably, the top surface of the package housing is fixedly connected with dustproof and heat dissipation holes, and the outer surface of the package housing is provided with three pin mounting slots that are respectively adapted to the gate pin, drain pin, and source pin. The dustproof and heat dissipation holes play an auxiliary role in dustproofing and heat dissipation.

[0013] Preferably, the three pin mounting slots are fixedly connected to the gate pin, drain pin, and source pin, respectively, and the pin mounting slots facilitate the installation of the gate pin, drain pin, and source pin.

[0014] Preferably, the outer surface of the package housing is provided with an auxiliary heat dissipation window, which is located above the pin mounting slot and can provide a certain heat dissipation effect for the pin.

[0015] This invention provides a high-power, fast-heat-dissipation MOS device, which has the following advantages:

[0016] 1. This utility model, through the setting of heat pipe and heat sink, allows the heat-absorbing film to absorb the heat generated inside the package housing into the heat pipe and then transport it to the heat sink. The heat sink can quickly dissipate the heat to the outside of the device, thereby achieving rapid cooling of the MOSFET, avoiding excessive internal temperature affecting the normal operation of the MOSFET, and extending the service life of the device.

[0017] 2. This utility model can protect the MOSFET housing by setting up a heat insulation pad, preventing the heat pipe from overheating and damaging the housing during heat conduction; the setting up a heat dissipation pad makes it easy for workers to solder the MOSFET to a specific position using solder wire, thus fixing the MOSFET. At the same time, the heat dissipation pad can also play a role in heat dissipation. Attached Figure Description

[0018] Figure 1This is a schematic diagram of the overall structure of this utility model;

[0019] Figure 2 This is an exploded view of the structure of this utility model;

[0020] Figure 3 This is a diagram showing the internal structure of the packaging shell of this utility model;

[0021] Figure 4 This is a schematic diagram of the rapid heat dissipation mechanism of this utility model.

[0022] [Explanation of Key Component Symbols]

[0023] 1. Encapsulation housing;

[0024] 2. Rapid heat dissipation mechanism; 201. Heat pipe; 202. Heat-absorbing film; 203. Heat sink; 204. Heat insulation pad; 205. Mounting hole;

[0025] 3. MOSFET chip; 4. Heat sink pad; 5. Dustproof and heat dissipation hole; 6. Gate pin; 7. Drain pin; 8. Source pin; 9. Pin mounting slot; 10. Auxiliary heat dissipation window. Detailed Implementation

[0026] This utility model embodiment provides a high-power, fast-heat-dissipation MOS device.

[0027] Please see Figure 1 , Figure 2 and Figure 3 The package includes a housing 1, and a MOSFET chip 3 is fixedly installed inside the housing 1. The housing 1 is made of epoxy resin, which is a high-performance and high-reliability chip packaging material with excellent insulation properties, electrochemical properties, acid resistance, alkali resistance, moisture resistance and high temperature resistance. The MOSFET chip 3 is existing technology and will not be described in detail in this application.

[0028] A heat dissipation pad 4 is fixedly connected to the bottom surface of the package housing 1. The heat dissipation pad 4 makes it easy for staff to solder the MOSFET to a specific position using solder wire, thereby fixing the MOSFET. At the same time, the heat dissipation pad 4 can also play a role in heat dissipation.

[0029] The top surface of the encapsulation housing 1 is fixedly connected with a dustproof heat dissipation hole 5, which can play an auxiliary heat dissipation role. A dustproof mesh is installed inside the dustproof heat dissipation hole 5 to prevent dust from entering the interior of the encapsulation housing 1 through the dustproof heat dissipation hole 5 and affecting the normal operation of the components inside the encapsulation housing 1.

[0030] The outer surface of the package housing 1 is provided with a gate pin 6, a drain pin 7, and a source pin 8. The MOSFET chip 3 is electrically connected to the gate pin 6, drain pin 7, and source pin 8 via a data line. The gate pin 6, drain pin 7, source pin 8, and data line are all prior art and will not be described in detail in this application. The drain pin 7 is connected to the positive terminal of the power supply. The infrared signal is input from the window, and the electrical signal is output from the source pin 8.

[0031] The outer surface of the package housing 1 has three pin mounting slots 9 that are adapted to the gate pin 6, drain pin 7, and source pin 8, respectively. The three pin mounting slots 9 are fixedly connected to the gate pin 6, drain pin 7, and source pin 8, respectively. The pin mounting slots 9 facilitate the assembly of the gate pin 6, drain pin 7, and source pin 8 by the operator. The inside of the pin mounting slots 9 has holes for data line connection, and the pin mounting slots 9 have good sealing properties with the gate pin 6, drain pin 7, and source pin 8, ensuring good sealing performance of the package housing 1.

[0032] An auxiliary heat dissipation window 10 is provided on the outer surface of the package housing 1. The auxiliary heat dissipation window 10 is located above the pin mounting slot 9. The contact position between the pin and the MOSFET chip 3 will generate high heat during device operation. The opening of the auxiliary heat dissipation window 10 helps to avoid the MOSFET being damaged due to excessive pin temperature during operation.

[0033] Please see Figure 2 and Figure 4 The encapsulation housing 1 is equipped with four rapid heat dissipation mechanisms 2 that have a heat dissipation effect. The rapid heat dissipation mechanism 2 includes a heat conduction pipe 201. The heat conduction pipe 201 can conduct the heat absorbed by the heat absorption film 202, so that the heat can be lost to the outside of the device through the heat sink 203, thereby improving the heat dissipation efficiency of the device.

[0034] The heat pipe 201 penetrates the package housing 1 and is fixedly connected to the package housing 1. A heat-absorbing film 202 is fixedly connected to the outer surface of the heat pipe 201. The heat-absorbing film 202 is made of rock wool, which can absorb most of the heat generated inside the device and transfer the heat to the inside of the heat pipe 201, thereby reducing the temperature inside the package housing 1 and preventing the MOS transistor from being damaged due to excessively high temperature inside the package housing 1.

[0035] A heat sink 203 is fixedly connected to the top of the heat pipe 201, and a heat insulation pad 204 is fixedly connected to the bottom of the heat sink 203. The heat sink 203 is made of copper or aluminum profiles and has excellent heat dissipation effect. When the temperature of the heat pipe 201 is high, the temperature inside the heat pipe 201 will be transferred to the heat sink 203. The heat sink 203 can quickly dissipate the heat to the outside of the device, thereby achieving a good cooling effect.

[0036] The top surface of the encapsulation housing 1 is provided with a mounting hole 205, and the heat insulation pad 204 is fixedly connected to the mounting hole 205. Since the encapsulation housing 1 is mostly made of special materials, its heat performance is uncertain. When the temperature of the heat pipe 201 is too high, the housing will melt slightly. The heat insulation pad 204 can protect the MOS tube housing and prevent the heat pipe 201 from being damaged due to excessive temperature during heat conduction.

[0037] Working principle: When the MOS device is in operation, the interior of the package 1 will generate a high temperature. At this time, the heat-absorbing film 202 will absorb the heat inside the package 1 and transfer the absorbed heat to the heat pipe 201. The heat pipe 201 will be heated and its overall temperature will rise. When the heat is transferred from the heat pipe 201 to the heat sink 203, it will be quickly evaporated to the outside of the device through the heat sink 203. This will create a certain temperature difference between the two ends of the heat pipe 201. Under the action of this temperature difference, the heat inside the package 1 will be continuously transferred to the heat sink 203 and discharged to the outside of the package 1, thereby reducing the temperature inside the package 1, avoiding the internal temperature of the device from being too high and affecting the normal operation of the MOS transistor, and extending the service life of the device.

[0038] The foregoing has shown and described the basic principles, main features, and advantages of this utility model. Those skilled in the art should understand that this utility model is not limited to the above embodiments. The embodiments and descriptions in the specification are merely illustrative of the principles of this utility model. Various changes and modifications can be made to this utility model without departing from its spirit and scope, and all such changes and modifications fall within the scope of the claims. The scope of protection of this utility model is defined by the appended claims and their equivalents.

Claims

1. A high-power fast heat dissipation type MOS device comprising a package shell (1), characterized in that: The inside of the packaging shell (1) is provided with four quick heat dissipation mechanisms (2) for heat dissipation effect, the quick heat dissipation mechanism (2) comprises a heat pipe (201), the outer surface of the heat pipe (201) is fixedly connected with a heat absorption film (202), the top end of the heat pipe (201) is fixedly connected with a heat dissipation fin (203), the bottom surface of the heat dissipation fin (203) is fixedly connected with a heat insulation pad (204), and the top surface of the packaging shell (1) is provided with a mounting hole (205).

2. The high power fast thermal dissipation MOS device of claim 1, wherein: The heat pipe (201) penetrates through the packaging shell (1) and is fixedly connected with the packaging shell (1), and the heat insulation pad (204) is fixedly connected with the mounting hole (205).

3. The high power fast thermal dissipation MOS device of claim 1, wherein: The inside of the packaging shell (1) is fixedly provided with a MOSFET chip (3), and the bottom surface of the packaging shell (1) is fixedly connected with a heat dissipation pad (4).

4. The high power fast thermal dissipation MOS device of claim 3, wherein: The outside of the packaging shell (1) is provided with a gate pin (6), a drain pin (7) and a source pin (8), and the MOSFET chip (3) is electrically connected with the gate pin (6), the drain pin (7) and the source pin (8) through a data line.

5. A high power fast thermal dissipation MOS device according to claim 4, wherein: The top surface of the packaging shell (1) is fixedly connected with a dustproof heat dissipation hole (5), and the outer surface of the packaging shell (1) is provided with three pin mounting grooves (9) matched with the gate pin (6), the drain pin (7) and the source pin (8) respectively.

6. A high power fast thermal dissipation MOS device according to claim 5, wherein: The three pin mounting grooves (9) are fixedly connected with the gate pin (6), the drain pin (7) and the source pin (8) respectively.

7. The high power fast thermal dissipation MOS device of claim 5, wherein: The outer surface of the packaging shell (1) is provided with an auxiliary heat dissipation window (10), and the auxiliary heat dissipation window (10) is located above the pin mounting groove (9).

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