Protection device for high-temperature crystal growth

Abstract

The utility model discloses a protection device for high-temperature crystal growth, which comprises a tray, a first zirconium oxide heat preservation cover is fixed at the top of the tray, positioning insertion holes which are distributed at equal intervals are formed in the periphery of the top of the first zirconium oxide heat preservation cover, and a second zirconium oxide heat preservation cover of which the bottom is welded with a positioning insertion rod is inserted into the inner wall of each positioning insertion hole; a zirconium oxide sealing cover is arranged at the top of the second zirconium oxide heat preservation cover, and a positioning circular groove is formed in the inner wall of the bottom of the first zirconium oxide heat preservation cover; the iron-chromium-aluminum alloy hoops are arranged outside the first zirconium oxide heat preservation cover and the second zirconium oxide heat preservation cover respectively to reinforce the first zirconium oxide heat preservation cover and the second zirconium oxide heat preservation cover, and iron-chromium-aluminum alloy has high melting point and resistivity, is not prone to induction heating and can serve as hooping materials on the outer sides of the heat preservation covers. Therefore, the thermal shock resistance and the thermal insulation effect of the thermal insulation cover are enhanced, and the phenomenon that the first zirconium oxide thermal insulation cover and the second zirconium oxide thermal insulation cover crack at high temperature is avoided.

Description

Technical Field

[0001] This utility model relates to the field of crystal growth technology, and in particular to a protective device for high-temperature crystal growth. Background Technology

[0002] High-temperature crystal growth requires the use of zirconia insulation covers and iridium crucibles. Traditional zirconia insulation covers and iridium crucibles are prone to cracking and deformation at high temperatures, causing crystals to fall into the crucible through the cracks, affecting the raw material composition and crystal growth quality. Especially after prolonged use, the crucible deforms and eventually fails, resulting in material leakage. The susceptibility of zirconia materials to cracking at high temperatures, and the tendency of iridium crucibles to deform at high temperatures, severely restrict the growth of large-size, high-quality crystals. To address these issues, structural improvements are needed to reduce the deformation of the iridium crucible caused by thermal cracking. Utility Model Content

[0003] The purpose of this invention is to address the shortcomings of existing technologies by proposing a protective device for high-temperature crystal growth.

[0004] To achieve the above objectives, the present invention adopts the following technical solution:

[0005] A protective device for high-temperature crystal growth includes a tray. A first zirconia insulation cover is fixed to the top of the tray. The top of the first zirconia insulation cover has equidistantly distributed positioning holes around its perimeter. A second zirconia insulation cover with a positioning rod welded to its bottom is inserted into the inner wall of the positioning holes. The top of the second zirconia insulation cover is provided with a zirconia sealing cap. A positioning groove is formed on the inner wall of the bottom of the first zirconia insulation cover. An iridium crucible is placed on the inner wall of the positioning groove. A lifting rod is inserted into the axis of the zirconia sealing cap. A seed crystal is fixed to the bottom of the lifting rod. The raw material in the iridium crucible is melted into a melt. Crystals are grown through seed crystal inoculation, shoulder formation, constant diameter growth, cooling and annealing, and other processes. An induction coil is sleeved on the first zirconia insulation cover.

[0006] As a further improvement of this utility model: the top of the first zirconia insulation cover has an annular groove, and the bottom of the second zirconia insulation cover is welded with a limiting ring, the limiting ring and the annular groove forming a tight fit.

[0007] As a further improvement of this utility model: the inner wall of the second zirconia insulation cover is provided with an observation hole through it in an inclined direction, and a sealing cap is inserted into the inner wall of the observation hole.

[0008] As a further embodiment of this utility model: the first zirconia insulation cover has a first annular groove that is parallel to each other, and a first iron-chromium-aluminum alloy hoop is fixedly installed on the inner wall of the first annular groove.

[0009] As a further improvement of this utility model: the second zirconia insulation cover has a second annular groove, and a second iron-chromium-aluminum alloy hoop is fixedly installed on the inner wall of the second annular groove.

[0010] As a further improvement of this invention: the induction coil is connected to a switch via a wire, and the switch is connected to an external power source.

[0011] As a further embodiment of this utility model: the diameter of the first zirconia insulation cover is the same as the diameter of the second zirconia insulation cover, and the first zirconia insulation cover is located directly below the second zirconia insulation cover.

[0012] Compared with the prior art, this utility model provides a protective device for high-temperature crystal growth, which has the following beneficial effects:

[0013] 1. The protective device for crystal growth in this design reinforces the first and second zirconia insulation covers by installing iron-chromium-aluminum alloy hoops on their exteriors. Since iron-chromium-aluminum alloy has a high melting point and resistivity, it is not easily heated by induction and can be used as the clamping material on the outside of the insulation cover, thereby enhancing the thermal shock resistance and insulation effect of the insulation cover and preventing the first and second zirconia insulation covers from cracking at high temperatures.

[0014] 2. The protective device for crystal growth designed in this paper strengthens the zirconia insulation cover to prevent cracks, thereby ensuring that the internal temperature is maintained at a suitable level. While ensuring the insulation effect, it also avoids the problem of deformation of the iridium crucible at high temperatures, ensuring the stability of the thermal field during crystal growth and improving the growth quality of the crystal.

[0015] 3. The protective device for crystal growth in this design, by setting a positioning insertion hole and an annular groove on the top of the first zirconia insulation cover, and cooperating with the limiting ring and positioning rod at the bottom of the second zirconia insulation cover, enables the first and second zirconia insulation covers to complete a quick alignment, insertion and sealing process, avoiding misalignment that could lead to uneven internal temperature distribution.

[0016] The parts of the device not covered herein are the same as or can be implemented using existing technologies. Attached Figure Description

[0017] Figure 1 This is a schematic diagram of the overall structure of a protective device for high-temperature crystal growth proposed in this utility model.

[0018] Figure 2 This is a side view of the overall structure of a protective device for high-temperature crystal growth proposed in this utility model.

[0019] Figure 3 This is a first-view structural schematic diagram of a protective device for high-temperature crystal growth proposed in this utility model.

[0020] Figure 4 This is a schematic diagram showing the disassembled structure of a protective device for high-temperature crystal growth proposed in this utility model.

[0021] In the diagram: 1. First zirconia insulation cover; 2. Positioning insertion hole; 3. Positioning insertion rod; 4. Second zirconia insulation cover; 5. Annular groove; 6. Limiting ring; 7. Zirconia sealing cover; 8. Observation hole; 9. Sealing cover; 10. Positioning circular groove; 11. Iridium crucible; 12. Lifting rod; 13. Seed crystal; 14. Melt; 15. Crystal; 16. First annular groove; 17. Second annular groove; 18. First iron-chromium-aluminum alloy hoop; 19. Second iron-chromium-aluminum alloy hoop; 20. Tray; 21. Induction coil. Detailed Implementation

[0022] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present utility model. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments.

[0023] Example 1:

[0024] A protective device for high-temperature crystal growth, as described in this embodiment, Figure 1-4 As shown, the device includes a tray 20, on the top of which a first zirconia insulation cover 1 is fixed. The top of the first zirconia insulation cover 1 has equidistantly distributed positioning holes 2 around its perimeter. A second zirconia insulation cover 4 with a positioning rod 3 welded to its bottom is inserted into the inner wall of the positioning holes 2. The top of the second zirconia insulation cover 4 is provided with a zirconia sealing cover 7. The bottom inner wall of the first zirconia insulation cover 1 has a positioning groove 10, and an iridium crucible 11 is placed on the inner wall of the positioning groove 10. A lifting rod 12 is inserted into the axis of the zirconia sealing cover 7, and a seed crystal 13 is fixed to the bottom of the lifting rod 12. The raw material in the iridium crucible 11 is melted into a melt 14. A crystal 15 is grown through seed crystal 13 inoculation, shoulder formation, equal diameter growth, cooling and annealing, and an induction coil 21 is sleeved on the first zirconia insulation cover 1.

[0025] By reinforcing the exterior of the first zirconia insulation cover 1 and the second zirconia insulation cover 4 with iron-chromium-aluminum alloy hoops, which have high melting point and resistivity and are not easily heated by induction, the iron-chromium-aluminum alloy can be used as a clamping material on the outside of the insulation cover, thereby enhancing the thermal shock resistance and insulation effect of the insulation cover and preventing the first zirconia insulation cover 1 and the second zirconia insulation cover 4 from cracking at high temperature.

[0026] The top of the first zirconia insulation cover 1 has an annular groove 5, and the bottom of the second zirconia insulation cover 4 is welded with a limiting ring 6. The limiting ring 6 and the annular groove 5 form a tight fit. The inner wall of the second zirconia insulation cover 4 has an observation hole 8 through it in an inclined direction, and a sealing cap 9 is inserted into the inner wall of the observation hole 8.

[0027] The first zirconia insulation cover 1 has parallel first annular grooves 16, and the inner wall of the first annular groove 16 is fixedly installed with a first iron-chromium-aluminum alloy hoop 18.

[0028] The second zirconia insulation cover 4 has a second annular groove 17, and a second iron-chromium-aluminum alloy hoop 19 is fixedly installed on the inner wall of the second annular groove 17.

[0029] By reinforcing the zirconia insulation cover to prevent cracks, the internal temperature can be maintained at a suitable level. While ensuring the insulation effect, it also avoids the problem of easy deformation of the iridium crucible 11 at high temperatures, ensuring the stability of the thermal field during the growth of crystal 15 and improving the growth quality of crystal 15.

[0030] In this embodiment, the first zirconia insulation cover 1 is first placed on top of the tray 20. Then, the iridium crucible 11 is aligned with the positioning groove 10 on the bottom inner wall of the first zirconia insulation cover 1. Next, the melt 14 is placed on the bottom inner wall of the iridium crucible 11. Then, the second zirconia insulation cover 4 with the positioning insert 3 is aligned with the positioning hole 2 and assembled. After the first zirconia insulation cover 1 and the second zirconia insulation cover 4 are assembled, the zirconia sealing cover is fixed on the top of the second zirconia insulation cover 4. The lifting rod 12 with the seed crystal 13 is inserted into the melt 14. Then, the induction coil 21 is sleeved on the first zirconia insulation cover 1 and the iridium crucible 11 inside the first zirconia insulation cover 1 is heated. When the internal temperature is maintained at a high temperature, the seed crystal 13 will grow crystal 15 from the melt 14.

[0031] Example 2:

[0032] A protective device for high-temperature crystal growth, such as Figure 1-4 As shown, this embodiment makes the following additions based on embodiment 1: the induction coil 21 is connected to a switch via a wire, and the switch is connected to an external power source; the diameter of the first zirconia insulation cover 1 is the same as the diameter of the second zirconia insulation cover 4, and the first zirconia insulation cover 1 is located directly below the second zirconia insulation cover 4.

[0033] In this embodiment, by setting a positioning insertion hole 2 and an annular groove 5 on the top of the first zirconia insulation cover 1, and cooperating with the limiting ring 6 and positioning rod 3 at the bottom of the second zirconia insulation cover 4, the first zirconia insulation cover 1 and the second zirconia insulation cover 4 can be quickly aligned, inserted and sealed, avoiding misalignment that could lead to uneven internal temperature distribution.

[0034] The above description is only a preferred embodiment of the present utility model, but the protection scope of the present utility model is not limited thereto. Any equivalent substitutions or changes made by those skilled in the art within the technical scope disclosed in the present utility model, based on the technical solution and the inventive concept of the present utility model, should be included within the protection scope of the present utility model.

Claims

1. A protection device for high temperature crystal growth comprising a tray (20), characterized in that, The top of the tray (20) is fixed with a first zirconia heat preservation cover (1), and the top of the first zirconia heat preservation cover (1) is provided with equidistantly distributed positioning jack holes (2), the inner wall of the positioning jack holes (2) is welded with a second zirconia heat preservation cover (4) of a positioning jack rod (3), and the top of the second zirconia heat preservation cover (4) is provided with a zirconia sealing cover (7), the bottom inner wall of the first zirconia heat preservation cover (1) is provided with a positioning circular groove (10), and the inner wall of the positioning circular groove (10) is placed with an iridium crucible (11), the axis of the zirconia sealing cover (7) is inserted with a lifting rod (12), and the bottom of the lifting rod (12) is fixed with a seed crystal (13), and the first zirconia heat preservation cover (1) is sleeved with an induction coil (21).

2. A protection device for high temperature crystal growth according to claim 1, wherein The top of the first zirconia heat preservation cover (1) is provided with an annular clamping groove (5), and the bottom of the second zirconia heat preservation cover (4) is welded with a limiting clamping ring (6), and the limiting clamping ring (6) and the annular clamping groove (5) are tightly matched.

3. A protective device for high temperature crystal growth according to claim 1, wherein The inner wall of the second zirconia heat preservation cover (4) is provided with an observation hole (8) penetrating in an inclined direction, and the inner wall of the observation hole (8) is inserted with a sealing clamping cover (9).

4. A protective device for high temperature crystal growth according to claim 1, wherein The first zirconia heat preservation cover (1) is provided with a first annular groove (16) parallel to each other, and the inner wall of the first annular groove (16) is fixedly installed with a first iron-chromium-aluminum alloy hoop (18).

5. A protective device for high temperature crystal growth as claimed in claim 1, wherein, The second zirconia heat preservation cover (4) is provided with a second annular groove (17), and the inner wall of the second annular groove (17) is fixedly installed with a second iron-chromium-aluminum alloy hoop (19).

6. A protective device for high temperature crystal growth as claimed in claim 1, wherein, The induction coil (21) is connected with a switch through a wire, and the switch is connected with an external power supply.

7. A protective device for high temperature crystal growth as claimed in claim 1, wherein The diameter size of the first zirconia heat preservation cover (1) is the same as that of the second zirconia heat preservation cover (4), and the first zirconia heat preservation cover (1) is located directly below the second zirconia heat preservation cover (4).

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