Stacked gate battery piece conductive seed layer structure
By designing a conductive seed layer structure for stacked grid solar cells, the contact area between the main conductive seed layer and the triangular conductive wire is increased, solving the problem of small contact area between the conductive seed layer and the triangular conductive wire. This improves the stability and light reflection efficiency of the triangular conductive wire and reduces costs.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-03-27
- Publication Date
- 2026-03-10
AI Technical Summary
The existing conductive seed layer has a small contact area with the triangular conductive wire, which makes the triangular conductive wire prone to tilting before and after welding, affecting the light reflection efficiency.
A conductive seed layer structure for stacked grid solar cells is designed. By increasing the contact area between the main conductive seed layer and the triangular conductive wire, multiple rows of main conductive seed layers are used to contact the triangular conductive wire. The main conductive seed layer is composed of multiple sub-conductive seed layers, forming S-shaped, arc-shaped, and zigzag-shaped structures, thereby increasing the contact area and supporting stability.
This improved the stability of the triangular conductive wire, reduced the tilt angle, enhanced light reflection efficiency, and lowered costs.
Smart Images
Figure CN223987338U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to photovoltaic field, specifically, relate to a kind of stack grid cell conductive seed layer structure. BACKGROUND
[0002] The main role of the conductive seed layer is to effectively collect the photo-generated electrons generated by the cell under illumination, to collect current and guide to the external circuit, to realize the external output of electric energy. In order to match the extremely fine triangular conductive wire, the conductive seed layer should be made as thin and flat as possible.
[0003] The existing conductive seed layer adopts conventional grid line design. When the conductive wire is stacked and welded, the micro cross section of the conductive seed layer grid line is generally arc-shaped, and the micro cross section of the triangular conductive wire bottom surface is also generally arc-shaped after plating the alloy layer. The theoretical contact mode of the conductive seed layer and the triangular conductive wire is point contact. Therefore, even if the two are accurately aligned, the actual contact area is very small, which causes the triangular conductive wire to easily tilt before and after welding, changes the reflection path of the incident light irradiated to the two sides of the triangular conductive wire, and reduces the utilization rate of the reflected light of the triangular conductive wire. SUMMARY
[0004] In order to solve the technical problem that the triangular conductive wire is easily tilted before and after welding, one object of the utility model is to provide a stack grid cell conductive seed layer structure.
[0005] To achieve the above-mentioned purpose, the embodiment of the utility model provides a stack grid cell conductive seed layer structure, which comprises:
[0006] a cell;
[0007] a plurality of triangular conductive wires arranged above the cell;
[0008] a plurality of main conductive seed layers arranged on the surface of the cell, and a plurality of triangular conductive wires are arranged on the surface of a plurality of main conductive seed layers respectively, the contact area of the main conductive seed layer and the triangular conductive wire is greater than the contact area of a single conductive seed layer and the triangular conductive wire, and the main conductive seed layer comprises a plurality of sub-conductive seed layers.
[0009] In the above technical solution, the extension direction of the main conductive seed layer is the first direction, and the direction perpendicular to the extension of the main conductive seed layer is the second direction.
[0010] In the above technical solution, the main conductive seed layer is a series of continuous sub-conductive seed layers in the first direction, and the shape of the sub-conductive seed layer is point, line or block.
[0011] In the above technical solution, the main conductive seed layer is a collection of a series of discontinuous sub-conductive seed layers in the first direction, which are in the shape of dots, lines or blocks.
[0012] In the above technical solution, the dot-shaped, line-shaped or block-shaped sub-conductive seed layers constitute several S-shaped structures, arc-shaped structures, zigzag structures, triangular structures, rectangular structures, rhomboid structures or circular structures.
[0013] The S-shaped structure, arc structure, polygonal structure, triangular structure, rectangular structure, rhomboid structure, or circular structure constitute a continuous or discontinuous main conductive seed layer.
[0014] In the above technical solution, in the first direction, the projected length of the main conductive seed layer on the surface of the battery cell is less than or equal to the width of the battery cell.
[0015] In the above technical solution, in the first direction, the projected width of the main conductive seed layer on the surface of the battery cell is less than or equal to the width of the triangular conductive wire.
[0016] In the above technical solution, the thickness of the main conductive seed layer is 0.1-15μm, and the width of the main conductive seed layer is 1-150μm.
[0017] Additional aspects and advantages of this invention will become apparent in the description that follows, or may be learned by practice of this invention. Attached Figure Description
[0018] The above and / or additional aspects and advantages of this utility model will become apparent and readily understood from the description of the embodiments taken in conjunction with the following drawings, in which:
[0019] Figure 1 This is a partial cross-sectional view of the present invention.
[0020] Figure 2 This is a schematic diagram of the continuous main conductive seed layer structure composed of the S-shaped conductive seed layer of this utility model.
[0021] Figure 3 This is a schematic diagram of the continuous main conductive seed layer structure composed of the arc-shaped sub-conductive seed layer of this utility model.
[0022] Figure 4 This is a schematic diagram of the continuous main conductive seed layer structure composed of the zigzag-shaped sub-conductive seed layer of this utility model.
[0023] Figure 5 This is a schematic diagram of the discontinuous main conductive seed layer structure composed of the S-shaped conductive seed layer of this utility model.
[0024] Figure 6This is a schematic diagram of the discontinuous main conductive seed layer structure composed of the arc-shaped sub-conductive seed layer of this utility model.
[0025] Figure 7 This is a schematic diagram of the discontinuous main conductive seed layer structure composed of a zigzag-shaped sub-conductive seed layer of this utility model.
[0026] in, Figures 1 to 7 The correspondence between the reference numerals and component names in the attached drawings is as follows:
[0027] 1. Battery cell; 2. Main conductive seed layer; 201. Sub-conductive seed layer; 3. Triangular conductive wire. Detailed Implementation
[0028] To better understand the above-mentioned objectives, features, and advantages of this utility model, the present utility model will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be noted that, unless otherwise specified, the embodiments and features described in these embodiments can be combined with each other.
[0029] Many specific details are set forth in the following description in order to provide a full understanding of the present invention. However, the present invention may also be implemented in other ways different from those described herein. Therefore, the scope of protection of the present invention is not limited to the specific embodiments disclosed below.
[0030] The following reference Figures 1 to 7 This invention describes a conductive seed layer structure for a stacked grid solar cell 1, comprising a solar cell 1, multiple rows of main conductive seed layers 2, and triangular conductive wires 3.
[0031] Specifically, the battery cell 1 is rectangular in shape, with a set of parallel long sides and a set of parallel short sides at its edge, the length of the long sides being greater than the length of the short sides. Multiple rows of main conductive seed layers 2 are welded side-by-side to the surface of the battery cell 1 along its length direction (the second direction), with the length direction of the surface parallel to the long sides of the battery cell 1. All rows of main conductive seed layers 2 are parallel to the short sides of the battery cell 1. Multiple triangular conductive wires 3 are respectively disposed above the multiple rows of main conductive seed layers 2. The contact area between the main conductive seed layer 2 and the triangular conductive wire 3 is greater than the contact area between a single conductive seed layer and the triangular conductive wire 3. Here, the single conductive seed layer is a common conductive seed layer in the prior art. This invention improves the stability of the triangular conductive wire 3 by increasing the contact area between the main conductive seed layer 2 and the triangular conductive wire 3, thereby reducing the tilt angle of the triangular conductive wire 3.
[0032] The lower end of the triangular conductive wire 3 is arc-shaped. When the triangular conductive wire 3 is placed on the main conductive seed layer 2, the contact surface between the triangular conductive wire 3 and the main conductive seed layer 2 is approximately a straight line or a straight dashed line. The main conductive seed layer 2 located on both sides of the contact surface between the triangular conductive wire 3 and the main conductive seed layer 2 consists of two parallel support surfaces. When the triangular conductive wire 3 is rotated counterclockwise or clockwise, causing it to tilt, since the triangular conductive wire 3 is located at the center of the main conductive seed layer 2, the contact area between the main conductive seed layer 2 and the triangular conductive wire 3 increases, and the angle formed by the support surface and the arc shape at the lower end of the triangular conductive wire 3 decreases. This reduces the tilt angle of the triangular conductive wire 3 and improves its stability.
[0033] like Figure 2 As shown, in one embodiment of this utility model, when the sub-conductive seed layer 201 is dot-shaped, for example, ten sub-conductive seed layers 201 are connected end to end to form an S-shaped structure. Ten S-shaped structures of the same shape and size are formed using the same principle. The ten S-shaped structures are connected end to end in sequence to form a continuous main conductive seed layer 2. At this time, the main conductive seed layer 2 is a serpentine structure. When the triangular conductive wire 3 is placed on the main conductive seed layer 2, compared with the prior art which directly designs the main conductive seed layer 2 as a straight line, this utility model can increase the contact area between the main conductive seed layer 2 and the triangular conductive wire 3 by designing the main conductive seed layer 2 as a serpentine shape. This makes the triangular conductive wire 3 more flat after being superimposed on the main conductive seed layer 2, thereby reducing the tilt angle when the triangular conductive wire is tilted. The bottom surface of the triangular conductive wire 3 is arc-shaped, thus forming a contact surface with the upper surface of the main conductive seed layer 2 that is approximately a straight line or a dashed line. Two parallel support surfaces are formed on both sides of the contact surface, each column including multiple spaced contact surfaces. When the triangular conductive wire 3 tilts, the two columns of support surfaces provide stable support, reducing the tilt angle of the triangular conductive wire 3. It should be noted that the upper surface of the main conductive seed layer 2 includes the contact surface (approximately a straight line or a dashed line) and the two columns of support surfaces. The upper surface area of the main conductive seed layer 2 includes the area of the contact surface and the area of the support surfaces. The contact surface is the part of the main conductive seed layer 2 that is in contact with the triangular conductive wire 3 before welding, and the width of the contact surface is 0.5-150 μm. The support surface is the part of the main conductive seed layer that is not yet in contact. When the width of the contact surface is equal to the width of the main conductive seed layer 2, although there is no support surface, the main conductive seed layer 2 can still provide stable support for the triangular conductive wire 3. Those skilled in the art should understand that this solution is also within the protection scope of this utility model.
[0034] When the sub-conductive seed layer 201 is linear or blocky, the principle is the same as that of the dotted sub-conductive seed layer 201, and will not be elaborated further here.
[0035] likeFigure 5 As shown, in one embodiment of this utility model, Figure 5 exist Figure 2 Based on this, several S-shaped structures are removed, leaving the remaining S-shaped structures spaced apart. When the triangular conductive wire 3 is placed on the main conductive seed layer 2, the main conductive seed layer 2 and the triangular conductive wire 3 form two rows of support surfaces. These two rows of support surfaces provide stable support for the triangular conductive wire 3, reducing its tilt angle. Furthermore, Figure 5 The spacing of the sub-conductive seed layer 201 in the middle can reduce the amount of silver paste used and reduce costs.
[0036] It should be noted that, as Figure 2 and Figure 5 The S-shaped structure in the paper consists of five line segments connected end to end, with adjacent line segments perpendicular to each other. In addition, multiple sub-conductive seed layers 201 can be connected to form an S-shaped structure or a similar S-shaped structure different from that in this application. The usage principle of the S-shaped structure and the similar S-shaped structure different from that in this application is the same as that of the S-shaped structure in this application, and will not be elaborated further here.
[0037] like Figure 3 As shown, in one embodiment of this utility model, when the sub-conductive seed layer 201 is dot-shaped, for example, ten sub-conductive seed layers 201 are connected end to end to form an arc-shaped structure. Ten arc-shaped structures of the same shape and size are formed using the same principle. These ten arc-shaped structures are then connected end to end to form a continuous main conductive seed layer 2. When the triangular conductive wire 3 is placed on the main conductive seed layer 2, the triangular conductive wire 3 and the main conductive seed layer 2 form two rows of support surfaces. The principle is the same as... Figure 2 The same applies, so I won't go into too much detail here.
[0038] When the sub-conductive seed layer 201 is linear or blocky, the principle is the same as that of the dotted sub-conductive seed layer 201, and will not be elaborated further here.
[0039] like Figure 6 As shown, in one embodiment of this utility model, Figure 6 exist Figure 3 Based on this, several arc-shaped structures are removed, leaving multiple arc-shaped structures spaced apart. When the triangular conductive wire 3 is placed on the main conductive seed layer 2, the main conductive seed layer 2 and the triangular conductive wire 3 form two rows of support surfaces. The principle is the same as... Figure 5 The same applies, so I won't go into too much detail here.
[0040] like Figure 4As shown, in one embodiment of this utility model, when the sub-conductive seed layer 201 is dot-shaped, for example, ten sub-conductive seed layers 201 are connected end to end to form a zigzag structure. Ten zigzag structures of the same shape and size are formed using the same principle. These ten zigzag structures are then connected end to end to form a continuous main conductive seed layer 2. When the triangular conductive wire 3 is placed on the main conductive seed layer 2, the triangular conductive wire 3 and the main conductive seed layer 2 form two rows of support surfaces. The principle is the same as... Figure 2 The same applies, so I won't go into too much detail here. In addition, the two adjacent zigzag structures have different tilt directions on the surface of the battery cell 1, and the angle formed by each zigzag structure and its short side is greater than zero and less than ninety degrees.
[0041] When the sub-conductive seed layer 201 is linear or blocky, the principle is the same as that of the dotted sub-conductive seed layer 201, and will not be elaborated further here.
[0042] like Figure 7 As shown, in one embodiment of this utility model, Figure 7 exist Figure 4 Based on this, several polygonal structures are removed, leaving the remaining polygonal structures spaced apart. When the triangular conductive wire 3 is placed on the main conductive seed layer 2, the main conductive seed layer 2 and the triangular conductive wire 3 form two rows of support surfaces. The principle is the same as... Figure 5 The same applies, so I won't go into too much detail here. In addition, the two adjacent zigzag structures have different tilt directions on the surface of the battery cell 1, and the angle formed by each zigzag structure and its short side is greater than zero and less than ninety degrees.
[0043] The main conductive seed layer 2 is composed of multiple sub-conductive seed layers 201. The sub-conductive seed layer 201 has a simple structure and can reduce the amount of materials such as silver paste used, thus reducing costs.
[0044] In addition, the dot-shaped, line-shaped, or block-shaped sub-conductive seed layers 201 can also form multiple triangular structures, rectangular structures, rhomboid structures, or circular structures, etc., and then the main conductive seed layer 2 is formed by multiple triangular structures, rectangular structures, rhomboid structures, or circular structures, etc. The main conductive seed layer 2 formed by triangular structures, rectangular structures, rhomboid structures, or circular structures has the same support principle for the triangular conductive wire 3 as the main conductive seed layer 2 formed by S-shaped structures, arc structures, and zigzag structures, and will not be elaborated further here.
[0045] The main conductive seed layer extends in a first direction, and the direction perpendicular to the extension of the main conductive seed layer is a second direction; the first direction is parallel to the short side of the battery cell 1, and the second direction is parallel to the long side of the battery cell 1. The length of the battery cell 1 is the length of its long side, and the width of the battery cell 1 is the length of its short side.
[0046] The sub-conductive seed layer 201 has one end near one of its short sides aligned on a straight line, denoted as L1, which is parallel to the two short sides. The other end of the sub-conductive seed layer 201 is aligned on a straight line, denoted as L2, which is also parallel to the two short sides. The distance between L1 and L2 is the width of the sub-conductive seed layer 201. The main conductive seed layer 2 has one end near one of its short sides aligned on a straight line, denoted as L3, which is parallel to the two short sides. The other end of the main conductive seed layer 2 is aligned on a straight line, denoted as L4, which is also parallel to the two short sides. The distance between L3 and L4 is the width of the main conductive seed layer 2, which is the projected width of the main conductive seed layer 2 onto the solar cell 1 in the second direction. The projected width of the main conductive seed layer 2 on the surface of the solar cell 1 is less than or equal to the width of the triangular conductive wire 3, and the width of the triangular conductive wire 3 is its length in the second direction.
[0047] The main conductive seed layer 2 lies on a straight line near one of its long sides, denoted as L5, which is parallel to the two long sides. The main conductive seed layer 2 also lies on a straight line near the other long side, denoted as L6, which is parallel to the two long sides. The distance between L5 and L6 is the length of the main conductive seed layer 2, which is the projected length of the main conductive seed layer 2 onto the surface of the solar cell 1 in the first direction. The projected length of the main conductive seed layer 2 is less than or equal to the length of the short side of the solar cell 1.
[0048] It should be noted that when the triangular conductive wire 3 is placed on the upper surface of the main conductive seed layer 2, the distance from the center point of the bottom surface of the triangular conductive wire 3 to L3 and L4 is the same. This ensures that the two rows of support surfaces are symmetrically arranged on both sides of the center point of the bottom surface of the triangular conductive wire 3, and that the two rows of support surfaces provide the same support force to the triangular conductive wire 3.
[0049] The distance between the upper and lower surfaces of the main conductive seed layer 2 is the thickness of the main conductive seed layer 2, which is 0.1-15 μm thick and 1-150 μm wide. The thickness of the main conductive seed layer 2 is also the thickness of the main conductive seed layer 2 on the finished solar cell 1. This thickness can be measured using a microscope by fabricating a metallographic cross-section of the stacked grid structure.
[0050] This utility model has the following advantages:
[0051] By welding multiple rows of main conductive seed layers 2 onto the surface of the solar cell 1, a design distinct from a single linear main conductive seed layer is achieved. This increases the total width of the contact surface between the main conductive seed layer 2 and the triangular conductive wires 3, thereby increasing the contact area. The supporting surfaces on both sides of the contact surface provide stable support for the triangular conductive wires 3, reducing their tilt angle. The cross-section of the main conductive seed layer 2 is roughly rectangular. When the triangular conductive wires 3 are placed on the upper surface of the main conductive seed layer 2, the contact surface is relatively flat, further improving the stability of the main conductive seed layer 2's support for the triangular conductive wires 3. The relatively flat upper surface of the main conductive seed layer 2 has a higher tolerance for printing processes and printing quality, avoiding the significant impact of poorly printed main conductive seed layers 2 in certain areas on the overall flatness of the stacked triangular conductive wires 3.
[0052] In this utility model, the terms "installation," "connection," "linking," and "fixing" should be interpreted broadly. For example, "connection" can be a fixed connection, a detachable connection, or an integral connection; "linking" can be a direct connection or an indirect connection through an intermediate medium. Those skilled in the art can understand the specific meaning of these terms in this utility model according to the specific circumstances.
[0053] In the description of this utility model, it should be understood that the terms "inner" and "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings. They are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or unit referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model.
[0054] In the description of this specification, the terms "one embodiment," "some embodiments," "specific embodiment," etc., refer to a specific feature, structure, material, or characteristic described in connection with that embodiment or example, which is included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.
[0055] The above are merely preferred embodiments of this utility model and are not intended to limit the scope of this utility model. Various modifications and variations can be made to this utility model by those skilled in the art. Any modifications, equivalent substitutions, or improvements made within the spirit and principles of this utility model should be included within the protection scope of this utility model.
Claims
1. A structure of conductive seed layer of stacked gate cell, characterized in that, The battery piece comprises: a battery piece; a plurality of triangular conductive wires arranged above the battery piece; a plurality of main conductive seed layers arranged on the surface of the battery piece, and a plurality of the triangular conductive wires are arranged on the surface of a plurality of the main conductive seed layers, the contact area of the main conductive seed layer and the triangular conductive wire is greater than the contact area of a single conductive seed layer and the triangular conductive wire, and the main conductive seed layer comprises a plurality of sub-conductive seed layers.
2. The structure of the conductive seed layer of the interdigital battery piece according to claim 1, wherein the extension direction of the main conductive seed layer is the first direction, and the direction perpendicular to the extension direction of the main conductive seed layer is the second direction.
3. The structure of the conductive seed layer of the interdigital battery piece according to claim 2, wherein the main conductive seed layer in the first direction is a series of continuous point-shaped, line-shaped or block-shaped sub-conductive seed layers.
4. The structure of the conductive seed layer of the interdigital battery piece according to claim 2, wherein the main conductive seed layer in the first direction is a series of discontinuous point-shaped, line-shaped or block-shaped sub-conductive seed layers.
5. The structure of the conductive seed layer of the interdigital battery piece according to claim 3 or 4, wherein the point-shaped, line-shaped or block-shaped sub-conductive seed layers form S-shaped structures, arc-shaped structures, polyline-shaped structures, triangular structures, rectangular structures, rhombic structures or circular structures.
6. The structure of the conductive seed layer of the interdigital battery piece according to claim 2, wherein the projection length of the main conductive seed layer on the surface of the battery piece in the first direction is less than or equal to the width of the battery piece.
7. The structure of the conductive seed layer of the interdigital battery piece according to claim 2, wherein the projection width of the main conductive seed layer on the surface of the battery piece in the second direction is less than or equal to the width of the triangular conductive wire.
8. The structure of the conductive seed layer of the interdigital battery piece according to claim 1, wherein the thickness of the main conductive seed layer is 0.1-15 μm, and the width of the main conductive seed layer is 1-150 μm.