High-power 330nm laser generating device for photochemical reaction

Abstract

The utility model provides a high-power 330 nm laser generating device for photochemical reaction, and relates to the technical field of photochemical synthesis. The laser generating device can output high-power and large-energy ultraviolet laser under the wavelength of 330 nanometers, so that the photochemical synthesis reaction efficiency and the product selectivity are improved; through cooperation of the Q switch driving source, the first Q switch and the second Q switch, 1319 nm laser of a plurality of pulse sequences is generated, and the output power of the fundamental frequency source is effectively improved. In the quadruplicated frequency stage, the shaped large-size and low-power-density 660 nm light spot is injected into the double-LBO crystal for walk-off compensation, so that the common crystal damage problem of the ultraviolet band is avoided, and meanwhile, the efficient nonlinear frequency conversion of the ultraviolet band under the low power density is realized. Ultraviolet light spots are homogenized through the first micro lens pair and the second micro lens pair, the size of ultraviolet light is further adjusted through the fifth shaping lens, and finally high stability and low maintenance cost of the laser are achieved.

Description

Technical Field

[0001] This invention relates to the field of photochemical synthesis technology, and in particular to a high-power 330 nm laser generating device for photochemical reactions. Background Technology

[0002] In the field of photochemical synthesis, ultraviolet lasers, as an important light source, are widely used for the excitation and induction of various chemical reactions. Traditional ultraviolet lasers typically employ gas discharge or excimer laser technology, which suffers from drawbacks such as large size, low efficiency, poor stability, and high maintenance costs. Furthermore, existing ultraviolet lasers have limitations in wavelength selection, making it difficult to meet the precise wavelength requirements of specific photochemical synthesis reactions.

[0003] With the development of solid-state laser technology, solid-state ultraviolet lasers have gradually become a research hotspot. However, there is still a gap in the application of high-power solid-state ultraviolet lasers in the 330 nm wavelength band. Ultraviolet lasers with a wavelength of 330 nm have unique excitation effects on certain specific photochemical synthesis reactions, significantly improving reaction efficiency and product selectivity. Therefore, developing a high-efficiency, stable solid-state ultraviolet laser with a wavelength precisely defined at 330 nm is of great significance for promoting the development of photochemical synthesis technology. Utility Model Content

[0004] This invention provides a high-power 330 nm laser generating device for photochemical reactions, which solves the problems of poor laser stability and high maintenance costs in the prior art.

[0005] This invention provides a high-power 330 nm laser generating device for photochemical reactions, comprising:

[0006] A high-power fundamental frequency source includes a first laser module, a second laser module, a resonant cavity mirror, an output coupling mirror, an optical rotator crystal, a first Q switch, a second Q switch, a birefringent filter, and a thin-film polarizer. The resonant cavity mirror, the birefringent filter, the thin-film polarizer, the first Q switch, the first laser module, the optical rotator crystal, the second laser module, the second Q switch, and the output coupling mirror are arranged sequentially along the laser optical path.

[0007] A high-efficiency frequency doubling device is disposed on the laser beam path output by the output coupling mirror;

[0008] A high-efficiency fourth-frequency doubling device is disposed on the laser optical path output by the high-efficiency frequency doubling device;

[0009] A laser homogenization and shaping device is disposed on the laser light path output by the high-efficiency fourth harmonic device;

[0010] The electronic control device includes a pump drive source and a Q-switch drive source. The pump drive source is electrically connected to the first laser module and the second laser module, and is used to control the pump source inside the first laser module and the second laser module to pump, so that the upper energy level particles in the gain medium inside the first laser module and the second laser module continuously accumulate. The Q-switch drive source is electrically connected to the first Q switch and the second Q switch, and is used to control the first Q switch and the second Q switch to open, so as to release photons according to the upper energy level particles accumulated in the first laser module and the second laser module, forming a double-peak pulse and outputting it through the output coupling mirror.

[0011] According to the present invention, a high-power 330 nm laser generating device for photochemical reactions is provided, wherein the optical axes of the resonant cavity mirror, the birefringent filter, the thin-film polarizer, the first Q switch, the first laser module, the optical rotator crystal, the second laser module, the second Q switch, and the output coupling mirror are on the same straight line.

[0012] According to the present invention, a high-power 330 nm laser generating device for photochemical reactions is provided, wherein the first laser module and the second laser module are both side-pumped laser modules, and the gain medium of the first laser module and the second laser module are both Nd:YAG laser crystals.

[0013] According to the present invention, a high-power 330 nm laser generating device for photochemical reactions is provided, wherein the pump source has a pumping time of 200 μs and a repetition rate of 600 Hz; the first Q switch and the second Q switch are controlled simultaneously, both with a working repetition rate of 15 kHz and an on-time of 5 μs.

[0014] According to the present invention, a high-power 330 nm laser generating device for photochemical reactions is provided. The high-efficiency frequency doubling device includes a first total reflection mirror assembly, a first shaping lens, a second shaping lens, a frequency doubling crystal (LBO), and a first laser collecting barrel. The first total reflection mirror assembly is disposed on the laser light path output by the output coupling mirror and is used to adjust the three-dimensional spatial position of the 1319 nm laser. The first shaping lens, the second shaping lens, the frequency doubling crystal (LBO), and the first laser collecting barrel are sequentially disposed on the laser light path output by the first total reflection mirror assembly.

[0015] According to the present invention, a high-power 330 nm laser generating device for photochemical reactions is provided, wherein the first total reflection mirror assembly includes a first total reflection mirror and a second total reflection mirror, the first total reflection mirror being disposed on the laser light path output by the output coupling mirror, and the second total reflection mirror being disposed on the laser light path output by the first total reflection mirror.

[0016] According to the present invention, a high-power 330 nm laser generating device for photochemical reactions is provided. The high-efficiency fourth-harmonic generation device includes a second total reflection mirror assembly, a third shaping lens, a fourth shaping lens, a fourth-harmonic crystal LBO, and a second laser collecting barrel. The second total reflection mirror assembly is disposed on the laser light path output by the second-harmonic crystal LBO and is used to adjust the three-dimensional spatial position of the 600 nm laser. The third shaping lens, the fourth shaping lens, the fourth-harmonic crystal LBO, and the second laser collecting barrel are sequentially disposed on the laser light path output by the second total reflection mirror assembly.

[0017] According to the present invention, a high-power 330 nm laser generating device for photochemical reactions is provided, wherein the second total reflection mirror assembly includes a third total reflection mirror and a fourth total reflection mirror, wherein the third total reflection mirror is disposed on the laser light path output by the frequency-doubled crystal LBO, and the fourth total reflection mirror is disposed on the laser light path output by the third total reflection mirror.

[0018] The high-efficiency frequency doubling device also includes a half-wave plate, which is disposed in the laser optical path between the third total reflection mirror and the fourth total reflection mirror. The half-wave plate is used to adjust the polarization state of the 660 nm laser to achieve frequency quadruple.

[0019] According to the present invention, a high-power 330 nm laser generating device for photochemical reactions is provided. The laser homogenization and shaping device includes a third total reflection mirror assembly, a first microlens pair, a second microlens pair, and a fifth shaping lens. The third total reflection mirror assembly is disposed on the laser light path output by the fourth-harmonic crystal LBO and is used to adjust the three-dimensional spatial position of the 330 nm laser. The first microlens pair, the second microlens pair, and the fifth shaping lens are sequentially disposed on the laser light path output by the third total reflection mirror assembly. The first microlens pair and the second microlens pair are both used to shape the fourth-harmonic 330 nm laser to homogenize the light spot.

[0020] According to the present invention, a high-power 330 nm laser generating device for photochemical reactions is provided, wherein the third total reflection mirror assembly includes a fifth total reflection mirror and a sixth total reflection mirror. The fifth total reflection mirror is disposed in the laser optical path between the fourth-harmonic crystal LBO and the second laser collecting barrel, and the sixth total reflection mirror is disposed in the laser optical path output by the fifth total reflection mirror.

[0021] This invention provides a high-power 330 nm laser generator for photochemical reactions, capable of outputting high-power (>10 W), high-energy (>16 mJ) ultraviolet laser at a wavelength of 330 nm, significantly improving the efficiency and product selectivity of photochemical synthesis reactions. Multiple pulse sequences of 1319 nm laser are generated through a Q-switch drive source in conjunction with a first and second Q-switch, effectively increasing the output power of the fundamental frequency source. In the fourth harmonic stage, a large-size, low-power-density 660 nm laser spot, shaped and injected into a dual LBO crystal for walk-off compensation, avoids common crystal damage problems in the ultraviolet band, while simultaneously achieving efficient nonlinear frequency conversion in the ultraviolet band at low power density. The ultraviolet spot is homogenized using a first and second microlens pair, and the ultraviolet light size is further adjusted using a fifth shaping lens, ultimately achieving high laser stability and low maintenance costs, making it an ideal choice for applications such as photochemical synthesis. Attached Figure Description

[0022] To more clearly illustrate the technical solutions in this utility model or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this utility model. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0023] Figure 1 This is a schematic diagram of the high-power 330 nm laser generating device for photochemical reactions provided by this utility model.

[0024] Figure 2 This is a schematic diagram of the control method for the first Q switch and the second Q switch provided by this utility model.

[0025] Figure 3 The output power curves of the fundamental frequency source provided by this utility model under different electronic control methods are shown.

[0026] Figure 4 This is a schematic diagram of the experimental results of whether or not there is walk-off compensation in the fourth harmonic stage provided by this utility model.

[0027] Figure 5 This is the measurement result of the ultraviolet laser linewidth provided by this utility model.

[0028] Figure 6 This is a comparison of the homogenization results of the beam homogenization device provided by this utility model.

[0029] Figure label:

[0030] 8. Pump drive source; 9. Q-switch drive source; 10. High-power fundamental frequency source; 11. First laser module; 12. Second laser module; 13. Resonant cavity mirror; 14. Output coupling mirror; 15. Optical rotator crystal; 16. First Q-switch; 17. Second Q-switch; 18. Birefringent filter; 19. Thin-film polarizer; 20. High-efficiency frequency doubling device; 21. First total internal reflection mirror; 22. Second total internal reflection mirror; 23. First shaping lens; 24. Second shaping lens; 25. 26. Frequency-doubled crystal LBO; 27. Half-wave plate; 28. First laser collection barrel; 39. High-efficiency fourth-frequency-doubled device; 30. Third total reflection mirror; 31. Fourth total reflection mirror; 32. Third shaping lens; 33. Fourth shaping lens; 34. Fourth frequency-doubled crystal LBO; 35. Second laser collection barrel; 46. Laser homogenization and shaping device; 47. Fifth total reflection mirror; 48. Sixth total reflection mirror; 49. First microlens pair; 40. Second microlens pair; 41. Fifth shaping lens. Detailed Implementation

[0031] To make the objectives, technical solutions, and advantages of this utility model clearer, the technical solutions of this utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this utility model, not all embodiments. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this utility model.

[0032] In the description of the embodiments of this utility model, it should be noted that the terms "center," "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer," etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing the embodiments of this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the embodiments of this utility model. In addition, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0033] In the description of the embodiments of this utility model, it should be noted that, unless otherwise explicitly specified and limited, the terms "connected" and "linked" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium. Those skilled in the art can understand the specific meaning of the above terms in the embodiments of this utility model based on the specific circumstances.

[0034] In this embodiment of the utility model, unless otherwise explicitly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0035] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0036] like Figure 1 and Figure 2 As shown, the high-power 330 nm laser generating device for photochemical reactions includes a high-power fundamental frequency source 10, a high-efficiency frequency doubling device 20, a high-efficiency fourth-frequency doubling device 30, and a laser homogenization and shaping device 40. The high-power fundamental frequency source 10 is 1319 nm. The high-power fundamental frequency source 10 includes a first laser module 11, a second laser module 12, a resonant cavity mirror 13, an output coupling mirror 14, an optical rotator crystal 15, a first Q switch 16, a second Q switch 17, a birefringent filter 18, and a thin-film polarizer 19. The resonant cavity mirror 13, birefringent filter 18, thin-film polarizer 19, first Q switch 16, first laser module 11, optical rotator crystal 15, second laser module 12, second Q switch 17, and output coupling mirror 14 are arranged sequentially along the laser optical path. A high-efficiency frequency doubling device 20 is disposed on the laser optical path output by the output coupling mirror 14. A high-efficiency fourth-frequency doubling device 30 is disposed on the laser optical path output by the high-efficiency frequency doubling device 20. A laser homogenization and shaping device 40 is disposed on the laser optical path output by the high-efficiency fourth-frequency doubling device 30.

[0037] The electronic control device includes a pump drive source and a Q-switch drive source. The pump drive source is electrically connected to the first laser module 11 and the second laser module 12. The pump drive source is used to control the pump source inside the first laser module 11 and the second laser module 12 to pump, so that the upper energy level particles in the gain medium inside the first laser module 11 and the second laser module 12 continue to accumulate. The Q-switch drive source is electrically connected to the first Q switch 16 and the second Q switch 17. The Q-switch drive source is used to control the first Q switch 16 and the second Q switch 17 to open, so as to release photons according to the upper energy level particles accumulated in the first laser module 11 and the second laser module 12, forming a double-peak pulse and outputting it through the output coupling mirror 14.

[0038] This invention provides a high-power 330 nm laser generator for photochemical reactions, capable of outputting high-power (>10 W), high-energy (>16 mJ) ultraviolet laser at a wavelength of 330 nm, significantly improving the efficiency and product selectivity of photochemical synthesis reactions. Multiple pulse sequences of 1319 nm laser light are generated through a Q-switch driving source in conjunction with the first Q-switch 16 and the second Q-switch 17, effectively increasing the output power of the fundamental frequency source. In the fourth harmonic stage, a large-size, low-power-density 660 nm laser spot, shaped and injected into a double LBO crystal for walk-off compensation, avoids the common crystal damage problem in the ultraviolet band, while simultaneously achieving efficient nonlinear frequency conversion in the ultraviolet band at low power density. The ultraviolet spot is homogenized using the first microlens pair 43 and the second microlens pair 44, and the ultraviolet light size is further adjusted using the fifth shaping lens 45, ultimately achieving high stability and low maintenance costs for the laser, making it an ideal choice for applications such as photochemical synthesis.

[0039] In one embodiment of this utility model, the optical axes of the resonant cavity mirror 13, birefringent filter 18, thin film polarizer 19, first Q switch 16, first laser module 11, optical rotator crystal 15, second laser module 12, second Q switch 17, and output coupling mirror 14 are on the same straight line. The above-mentioned devices constitute a 1319 nm laser resonant cavity for outputting 1319 nm laser.

[0040] In one embodiment of the present invention, the laser module includes a pump source and a gain medium. The first laser module 11 and the second laser module 12 are both side-pumped laser modules, and the gain medium of the first laser module 11 and the second laser module 12 is an Nd:YAG laser crystal.

[0041] In one embodiment of this invention, the pumping time of the pump source is 200 μs, and the pump source repetition rate is 600 Hz; the first Q switch 16 and the second Q switch 17 are controlled simultaneously, both with an operating repetition rate of 15 kHz and an on-time of 5 μs. Figure 3As shown, by cooperating with the first Q switch 16 and the second Q switch 17 through the Q-switch driving source, a macro pulse with a repetition rate of 600Hz can be finally output. Each macro pulse contains two micro pulses. Compared with the laser with single-pulse output using the traditional Q-switching method with a higher repetition rate, the laser generating device of this invention can effectively improve the output power of the 1319 nm laser and reduce the beam quality degradation caused by potential thermally induced wavefront distortion.

[0042] In one embodiment of this utility model, the high-efficiency frequency doubling device 20 includes a first total reflection mirror assembly, a first shaping lens 23, a second shaping lens 24, a frequency doubling crystal LBO 25, and a first laser collection barrel 27. The first total reflection mirror assembly is disposed on the laser light path output by the output coupling mirror 14 and is used to adjust the three-dimensional spatial position of the 1319 nm laser. The first total reflection mirror assembly includes a first total reflection mirror 21 and a second total reflection mirror 22. The first total reflection mirror 21 is disposed on the laser light path output by the output coupling mirror 14, and the second total reflection mirror 22 is disposed on the laser light path output by the first total reflection mirror 21. Both the first total reflection mirror 21 and the second total reflection mirror 22 are 1319 nm total reflection mirrors.

[0043] The first shaping lens 23, the second shaping lens 24, the frequency-doubled crystal LBO 25, and the first laser collecting barrel 27 are sequentially arranged in the laser light path output from the first total reflection mirror assembly. Specifically, the first shaping lens 23, the second shaping lens 24, the frequency-doubled crystal LBO 25, and the first laser collecting barrel 27 are sequentially arranged in the laser light path output from the second total reflection mirror 22. The frequency-doubled crystal LBO 25 is used to generate 660 nm laser light, and the first laser collecting barrel 27 is a 660 nm laser collecting barrel.

[0044] In the frequency second harmonic stage, the 1319 nm laser is reflected by the first total reflection mirror 21 and the second total reflection mirror 22, then shaped by the first shaping lens 23 and the second shaping lens 24 before entering the frequency second harmonic crystal LBO, which has dimensions of 4 mm * 4 mm * 40 mm. The remaining 1319 nm laser enters the first laser collection bin 27. The half-wave plate 26 is used to further adjust the polarization state of the 660 nm laser to complete the next step of frequency fourth harmonic harmonicization.

[0045] In one embodiment of this invention, the high-efficiency fourth frequency harmonic device 30 is a 330 nm high-efficiency fourth frequency harmonic device. The high-efficiency fourth frequency harmonic device 30 includes a second total internal reflection mirror assembly, a third shaping lens 33, a fourth shaping lens 34, a fourth frequency harmonic crystal LBO 35, and a second laser collecting container 36. The second total internal reflection mirror assembly is disposed on the laser light path output by the second frequency harmonic crystal LBO 25 and is used to adjust the three-dimensional spatial position of the 600 nm laser. The second total internal reflection mirror assembly includes a third total internal reflection mirror 31 and a fourth total internal reflection mirror 32. The third total internal reflection mirror 31 is disposed on the laser light path output by the second frequency harmonic crystal LBO 25, and the fourth total internal reflection mirror 32 is disposed on the laser light path output by the third total internal reflection mirror 31. The third total internal reflection mirror 31 has high reflectivity at 660 nm and high transmittance at 1319 nm.

[0046] The fourth-harmonic generation crystal LBO 35 is cut into multiple smaller LBO crystals of equal length to compensate for the space walk-off effect when a 330 nm laser is generated by fourth-harmonic generation of a 660 nm laser. The LBO crystal consists of two 4 mm * 4 mm * 20 mm crystals, placed coaxially. A pair of lenses with focal lengths of 100 mm and 150 mm are used in front of the LBO crystal to shape the 660 nm laser, ensuring that the laser is injected into the LBO crystal with lower power density and collimation.

[0047] The high-efficiency frequency doubling device 20 also includes a half-wave plate 26, which is disposed in the laser optical path between the third total reflection mirror 31 and the fourth total reflection mirror 32. The half-wave plate 26 is used to adjust the polarization state of the 660 nm laser to complete the fourth frequency doubling.

[0048] The third shaping lens 33, the fourth shaping lens 34, the fourth frequency-doubled crystal LBO 35, and the second laser collecting barrel 36 are sequentially arranged on the laser light path output by the second total reflection mirror assembly. Specifically, the third shaping lens 33, the fourth shaping lens 34, the fourth frequency-doubled crystal LBO 35, and the second laser collecting barrel 36 are sequentially arranged on the laser light path output by the fourth total reflection mirror 32. The second laser collecting barrel 36 is a 660 nm light collecting barrel.

[0049] In the fourth-harmonic generation stage, the 660 nm laser is then reflected by the third total reflection mirror 31 and the fourth total reflection mirror 32, and enters the third shaping lens 33 and the fourth shaping lens 34 for shaping. The shaped, large-size, low-power-density 660 nm laser passes through the fourth-harmonic crystal LBO35 to generate a 330 nm ultraviolet laser, which is then reflected by the fifth total reflection mirror 41 and the sixth total reflection mirror 42, and enters the first microlens pair 43 and the second microlens pair 44. Finally, it is shaped by the fifth shaping lens 45 and then output.

[0050] like Figure 4As shown, after walk-off compensation, although the power density of the 660 nm laser is low, it still has high efficiency, and the spot morphology of the 330 nm ultraviolet laser is also significantly improved.

[0051] In one embodiment of this utility model, the laser homogenization and shaping device 40 includes a third total reflection mirror assembly, a first microlens pair 43, a second microlens pair 44, and a fifth shaping lens 45. The third total reflection mirror assembly is disposed on the laser light path output by the fourth frequency-harmonic crystal LBO35 and is used to adjust the three-dimensional spatial position of the 330nm laser. Specifically, the third total reflection mirror assembly includes a fifth total reflection mirror 41 and a sixth total reflection mirror 42. The fifth total reflection mirror 41 is disposed on the laser light path between the fourth frequency-harmonic crystal LBO35 and the second laser collection barrel 36, and the sixth total reflection mirror 42 is disposed on the laser light path output by the fifth total reflection mirror 41. The fifth total reflection mirror 41 is highly reflective at 330 nm and highly transparent at 660 nm. The first microlens pair 43, the second microlens pair 44, and the fifth shaping lens 45 are sequentially arranged on the laser light path output by the third total reflection mirror assembly. Specifically, the first microlens pair 43, the second microlens pair 44, and the fifth shaping lens 45 are sequentially arranged on the laser light path output by the sixth total reflection mirror 42. The first microlens pair 43 and the second microlens pair 44 are both used to shape the fourth-harmonic 330 nm laser to homogenize the light spot.

[0052] like Figure 6 As shown, in the beam homogenization stage, the ultraviolet laser is homogenized by the first microlens pair 43, the second microlens pair 44 and the fifth shaping lens 45. The first microlens pair 43, the second microlens pair 44 and the fifth shaping lens 45 are arranged horizontally in sequence to ensure the beam homogenization in two directions, thereby obtaining a beam with a nearly flat top distribution.

[0053] The high-power 330 nm laser generating device for photochemical reactions provided by this invention can generate a high-power 1319 nm fundamental frequency laser; and convert the fundamental frequency laser into a 660 nm laser through a frequency doubling process; then further convert the 660 nm laser into a high-power 330 nm ultraviolet laser through a frequency quadrupleling process; finally, homogenize the 330 nm ultraviolet laser through a homogenizing device to obtain a nearly flat-top distributed beam, thereby improving the efficiency and product selectivity of the photochemical synthesis reaction.

[0054] like Figure 5 As shown, the laser generating device provided by this utility model produces lasers with good spectral width. The laser generating device not only improves the efficiency of photochemical synthesis, but also reduces maintenance costs, and has broad application prospects.

[0055] The operating method of the high-power 330 nm laser generating device for photochemical reactions provided by this utility model includes:

[0056] Pump sources within the first laser module 11 and the second laser module 12 are pumped by a pump drive source, causing continuous accumulation of upper-level particles in the gain medium within the laser modules. A Q-switch drive source controls the opening of the first Q-switch 16 and the second Q-switch 17, releasing photons based on the accumulated upper-level particles within the first laser module 11 and the second laser module 12, forming a double-peak pulse that is output through the output coupling mirror 14. The pump time of the pump source is 200 μs, and the pump repetition rate is 600 Hz. The operating repetition rate of both the first Q-switch 16 and the second Q-switch 17 is 15 kHz, and their opening time is 5 μs. Through the cooperation of the Q-switch drive source and the first Q-switch 16 and the second Q-switch 17, a macropulse with a repetition rate of 600 Hz can be output. Each macropulse contains two micropulses, effectively improving the output power of the 1319 nm laser.

[0057] The fourth-harmonic generation crystal LBO35 is cut into multiple smaller LBO crystals of equal length to compensate for the space walk-off effect when a 330 nm laser is generated by fourth-harmonic generation of a 660 nm laser. Each LBO crystal consists of two 4 mm * 4 mm * 20 mm crystals, and a pair of lenses with focal lengths of 100 mm and 150 mm are used in front of the LBO crystals to shape the 660 nm laser, ensuring that the laser is injected into the LBO crystals with lower power density and collimation.

[0058] Two pairs of microlens are used to shape the 4th harmonic 330 nm laser beam to homogenize the beam spot. The first microlens pair 43 and the second microlens pair 44 each contain two orthogonally arranged planar-cylindrical microlens arrays. Each cylindrical microlens array has a focal length of 5.4 mm, a microlens spacing of 500 μm, and dimensions of 15 × 15 × 1 mm³. The two orthogonally arranged planar-cylindrical microlens arrays are used to optimize beam propagation in the horizontal X-direction and the vertical Y-direction, respectively. The first microlens pair 43 and the second microlens pair 44 are arranged horizontally in sequence to ensure beam homogenization in both directions. The homogenized beam spot is further shaped by a fifth shaping lens 45 to adjust the size of the homogenized beam spot.

[0059] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this utility model, and not to limit it. Although this utility model has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this utility model.

Claims

1. A high-power 330 nm laser generating device for photochemical reactions, characterized in that, The utility model relates to a high-power base frequency source (10) comprising a first laser module (11), a second laser module (12), a resonant cavity mirror (13), an output coupling mirror (14), an optical rotatory crystal (15), a first Q switch (16), a second Q switch (17), a birefringent filter (18) and a thin film polarizer (19), wherein the resonant cavity mirror (13), the birefringent filter (18), the thin film polarizer (19), the first Q switch (16), the first laser module (11), the optical rotatory crystal (15), the second laser module (12), the second Q switch (17) and the output coupling mirror (14) are sequentially arranged along a laser light path. A high-efficiency frequency doubling device (20) is arranged on the laser light path output by the output coupling mirror (14). A high-efficiency four-frequency doubling device (30) is arranged on the laser light path output by the high-efficiency frequency doubling device (20). A laser homogenization and shaping device (40) is arranged on the laser light path output by the high-efficiency four-frequency doubling device (30). An electric control device comprises a pump driving source and a Q switch driving source, the pump driving source is electrically connected with the first laser module (11) and the second laser module (12), the pump driving source is used for controlling the pump source inside the first laser module (11) and the second laser module (12) to pump, so that the upper energy level particles of the gain medium inside the first laser module (11) and the second laser module (12) are continuously accumulated, the Q switch driving source is electrically connected with the first Q switch (16) and the second Q switch (17), the Q switch driving source is used for controlling the first Q switch (16) and the second Q switch (17) to open, so that the photons accumulated in the first laser module (11) and the second laser module (12) are released to form a double-peak pulse and are output through the output coupling mirror (14). The optical axes of the resonant cavity mirror (13), the birefringent filter (18), the thin film polarizer (19), the first Q switch (16), the first laser module (11), the optical rotatory crystal (15), the second laser module (12), the second Q switch (17) and the output coupling mirror (14) are collinear.

2. The high power 330 nm laser generating device for photochemical reactions according to claim 1, characterized in that, The first laser module (11) and the second laser module (12) are both side-pumped laser modules, and the gain medium of the first laser module (11) and the second laser module (12) is a Nd:YAG laser crystal.

3. The high power 330 nm laser generating device for photochemical reactions according to claim 2, characterized in that, The pumping time of the pump source is 200 microseconds, the repetition frequency of the pump source is 600 Hz, the first Q switch (16) and the second Q switch (17) are simultaneously controlled, the working repetition frequency is 15 kHz, and the opening time is 5 microseconds.

4. The high power 330 nm laser generating device for photochemical reactions according to claim 1, characterized in that, ​ 5. The high-power 330 nm laser generating device for photochemical reactions according to any one of claims 1 to 4, characterized in that, The high-efficiency frequency doubling device (20) comprises a first total reflection mirror assembly, a first shaping lens (23), a second shaping lens (24), a second harmonic generation crystal LBO (25) and a first laser collection barrel (27), the first total reflection mirror assembly is arranged on the laser light path output by the output coupling mirror (14) and is used for adjusting the three-dimensional spatial position of the 1319 nm laser; the first shaping lens (23), the second shaping lens (24), the second harmonic generation crystal LBO (25) and the first laser collection barrel (27) are sequentially arranged on the laser light path output by the first total reflection mirror assembly.

6. The high power 330 nm laser generating device for photochemical reactions according to claim 5, characterized in that, The first total reflection mirror assembly comprises a first total reflection mirror (21) and a second total reflection mirror (22), the first total reflection mirror (21) is arranged on the laser light path output by the output coupling mirror (14), and the second total reflection mirror (22) is arranged on the laser light path output by the first total reflection mirror (21).

7. The high power 330 nm laser generating device for photochemical reactions according to claim 6, characterized in that, The high-efficiency four times frequency doubling device (30) comprises a second total reflection mirror assembly, a third shaping lens (33), a fourth shaping lens (34), a four times frequency doubling crystal LBO (35) and a second laser collection barrel (36), the second total reflection mirror assembly is arranged on the laser light path output by the second harmonic generation crystal LBO (25) and is used for adjusting the three-dimensional spatial position of the 600 nm laser; the third shaping lens (33), the fourth shaping lens (34), the four times frequency doubling crystal LBO (35) and the second laser collection barrel (36) are sequentially arranged on the laser light path output by the second total reflection mirror assembly.

8. The high power 330 nm laser generating device for photochemical reactions according to claim 7, characterized in that, The second total reflection mirror assembly comprises a third total reflection mirror (31) and a fourth total reflection mirror (32), the third total reflection mirror (31) is high-reflective to 660 nm and high-transmissive to 1319 nm, the third total reflection mirror (31) is arranged on the laser light path output by the second harmonic generation crystal LBO (25), and the fourth total reflection mirror (32) is arranged on the laser light path output by the third total reflection mirror (31); The high-efficiency frequency doubling device (20) further comprises a half-wave plate (26), the half-wave plate (26) is arranged on the laser light path between the third total reflection mirror (31) and the fourth total reflection mirror (32), and the half-wave plate (26) is used for adjusting the polarization state of the 660 nm laser to complete four times frequency doubling.

9. The high power 330 nm laser generating device for photochemical reactions according to claim 8, characterized in that, The laser homogenization and shaping device (40) comprises a third total reflection mirror assembly, a first microlens pair (43), a second microlens pair (44) and a fifth shaping lens (45), the third total reflection mirror assembly is arranged on the laser light path output by the four times frequency doubling crystal LBO (35) and is used for adjusting the three-dimensional spatial position of the 330 nm laser; the first microlens pair (43), the second microlens pair (44) and the fifth shaping lens (45) are sequentially arranged on the laser light path output by the third total reflection mirror assembly, and the first microlens pair (43) and the second microlens pair (44) are both used for shaping the four times frequency doubling 330 nm laser to homogenize the light spot.

10. The high power 330 nm laser generating device for photochemical reactions according to claim 9, characterized in that, The third total reflection mirror assembly includes a fifth total reflection mirror (41) and a sixth total reflection mirror (42), the fifth total reflection mirror (41) is high reflection at 330 nm and high transmission at 660 nm, the fifth total reflection mirror (41) is arranged on the laser light path between the fourth harmonic generation crystal LBO (35) and the second laser collection barrel (36), and the sixth total reflection mirror (42) is arranged on the laser light path output by the fifth total reflection mirror (41).

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