Semiconductor laser device
By using deformable prisms and beam-splitting elements in semiconductor lasers for spot correction and beam splitting, the problems of high cost and low integration of multi-beam output in high-power semiconductor lasers are solved, realizing high-brightness multi-beam output and low-cost integrated design.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-29
- Publication Date
- 2026-03-17
AI Technical Summary
Existing high-power semiconductor laser multi-beam output and focusing solutions are costly and have low overall device integration.
A single collimated beam is output using a pump optical module. The beam spot is corrected and split by the deformable prism and beam splitting element in the shaping component to form multiple sub-beams. The beam is then output through a coupling fiber, eliminating the need for multiple lenses in conventional solutions.
It achieves high-brightness multi-beam output, reduces production costs, and improves the integration and beam quality of the device.
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Figure CN224006316U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of laser technology, and in particular to a semiconductor laser device. Background Technology
[0002] High-power semiconductor laser devices have been widely used in numerous fields such as laser cutting, laser welding, laser marking, laser medicine, lidar, and laser weapons. Among these, multi-output semiconductor laser devices represent a significant demand in the laser field, and research on multi-output semiconductor lasers has been increasing in recent years. Current technologies for splitting the laser beam emitted by semiconductor lasers typically utilize polychromatic mirrors or diffraction gratings. However, these methods have the following drawbacks: polychromatic mirrors require high precision across the laser wavelength; high-precision diffraction gratings are expensive and unsuitable for industrial semiconductor lasers; and lower-cost transmission and reflection gratings suffer from significant energy losses. Furthermore, collimation and focusing modules often require two or more lenses placed in the optical path to effectively improve the laser beam quality. Increasing the number of lenses correspondingly increases the geometric dimensions of the semiconductor laser, hindering its integration. Moreover, in the high-power laser field, spherical mirrors are limited by high power, resulting in a limited selection of focal lengths and higher costs compared to flat glass processing.
[0003] Therefore, in order to address the problems of high cost and low overall integration of existing high-power semiconductor laser multi-beam output and focusing solutions, a new semiconductor laser device needs to be designed. Utility Model Content
[0004] In view of the above-mentioned shortcomings of the prior art, the purpose of this application is to provide a semiconductor laser device to solve the problems of high cost and low overall integration of the existing high-power semiconductor laser multi-beam output and focusing schemes.
[0005] To achieve the above and other related objectives, this application provides a semiconductor laser device, comprising:
[0006] Pump optical module, used to output a single collimated beam;
[0007] A shaping component, disposed on the output optical path of the collimated beam, includes a deformable prism and a beam-splitting element arranged sequentially. The deformable prism is used to correct the collimated beam so that the spot size of the collimated beam is consistent in the slow axis direction and the fast axis direction. The beam-splitting element is used to split the corrected collimated beam into multiple sub-beams for output.
[0008] Multiple coupling optical fibers are provided, and each of the sub-beams is coupled to its corresponding coupling optical fiber after exiting the beam splitter element.
[0009] As a preferred embodiment, the deformable prism is a right-angle prism.
[0010] As a preferred embodiment, the collimated beam is incident from the right-angled facet of the right-angle prism to reduce the linear diameter of the collimated beam in the fast-axis direction; or,
[0011] The collimated beam is incident from the inclined surface of the right-angle prism to expand the linear diameter of the collimated beam in the slow axis direction.
[0012] As a preferred embodiment, the semiconductor laser device further includes a housing substrate, and the shaping component further includes a fixing member, through which the deformable prism is fixed to the surface of the housing substrate.
[0013] As a preferred embodiment, the beam splitter includes a plurality of identical sub-lenses arranged in a predetermined shape, and the number of coupling optical fibers is consistent with the number of sub-lenses.
[0014] As a preferred embodiment, each of the sub-lenses is a spherical lens, an aspherical lens, or a cylindrical lens.
[0015] As a preferred embodiment, the sub-lenses are arranged in an N×M array to split the collimated beam into N×M sub-beams.
[0016] As a preferred embodiment, the pump light module includes a beam combining component, at least one chip component, and a plurality of collimation components corresponding to each chip in the chip component. The collimation components are used to convert the pump light emitted from the corresponding chip into a collimated beam.
[0017] The beam combining component is disposed in the output optical path of at least two of the collimated beams, and is used to combine multiple collimated beams to output a single collimated beam.
[0018] As a preferred embodiment, the beam combining assembly includes a polarization beam combiner and a plurality of first spot steering elements, each of the first spot steering elements being used to steering the collimated beam emitted from the collimation assembly toward the polarization beam combiner.
[0019] As a preferred embodiment, at least one chip component includes a first chipset and a second chipset.
[0020] Wherein, the first pump light emitted from the first chip group is transformed into a first collimated beam by the collimation component, and the second pump light emitted from the second chip group is transformed into a second collimated beam by the collimation component;
[0021] The first collimated beam is deflected by the first spot-directing element and then reflected by the polarization combiner before being output along the first direction. The second collimated beam is deflected by the first spot-directing element and then output along the first direction through the polarization combiner.
[0022] In summary, this utility model discloses a semiconductor laser device, including a pump light module, a shaping component, and multiple coupling fibers. The pump light module outputs a single collimated beam. The shaping component is disposed on the output optical path of the collimated beam and includes a deformable prism and a beam-splitting element arranged sequentially. The deformable prism corrects the collimated beam, ensuring that the beam spot size is consistent in both the slow and fast axis directions. The beam-splitting element splits the corrected collimated beam into multiple sub-beams for output. Each sub-beam is coupled to its corresponding coupling fiber after exiting the beam-splitting element. This semiconductor laser device not only achieves high-brightness multi-beam output through the beam-splitting element but also uses a deformable prism in the optical path to shape the collimated beam in either the fast or slow axis direction, which helps reduce production costs and improve the overall integration of the device. Attached Figure Description
[0023] Figure 1 This is a schematic diagram of the structure of a semiconductor laser device provided in this application;
[0024] Figure 2 This is a schematic diagram of the output optical path principle of a deformable lens provided in this application;
[0025] Figure 3 This is a schematic diagram of the output optical path of a beam splitter provided in this application;
[0026] The accompanying diagram is described as follows:
[0027] 1. Chip assembly; 11. Chip; 2. Collimation assembly; 3. Beam combining assembly; 4. Shaping assembly; 41. Deformation prism; 43. Beam splitting element; 45. Fixing element; 430. Sub-lens; 51. First beam deflection element; 52. Second beam deflection element; 6. Housing substrate. Detailed Implementation
[0028] The present invention will now be described in further detail with reference to the accompanying drawings and embodiments. It is to be understood that the specific embodiments described herein are merely illustrative of the present invention and not intended to limit it. Furthermore, it should be noted that, for ease of description, only the parts relevant to the present invention are shown in the drawings, not the entire structure. Various modifications and variations can be made to the present invention without departing from its spirit or scope, which will be apparent to those skilled in the art. Therefore, the present invention is intended to cover modifications and variations falling within the scope of the corresponding claims (the claimed technical solutions) and their equivalents. It should be noted that the embodiments provided by the present invention can be combined with each other without contradiction.
[0029] This utility model provides a semiconductor laser device in view of one or more of the above-mentioned problems existing in the prior art. Figure 1 This is a schematic diagram of a semiconductor laser device provided in this application. Please refer to it. Figure 1 The semiconductor laser device provided in this embodiment includes a pump light module, a shaping component, and multiple coupling fibers. The pump light module outputs a single collimated beam. The shaping component is disposed on the output optical path of the collimated beam and includes a deformable prism and a beam-splitting element arranged sequentially. The deformable prism corrects the collimated beam, ensuring that the beam spot size is consistent along both the slow and fast axes. The beam-splitting element splits the corrected collimated beam into multiple sub-beams for output. Each sub-beam is coupled to its corresponding coupling fiber after exiting the beam-splitting element. It is understood that a collimated beam refers to a beam with a small beam divergence angle, meaning that the beam radius does not significantly change after a certain propagation distance. In this embodiment, the pump light module can use a single chip with good collimation performance; alternatively, multiple chips can be used, with the emitted multi-path pump light being collimated and combined to output a single collimated beam. This embodiment does not impose any limitations.
[0030] refer to Figure 1 Taking a pump light module comprising a beam combiner 3, at least one chip assembly 1, and multiple collimating assemblies 2 corresponding to the chips in the chip assembly 1 as an example. Each chip assembly 1 has several independent chips 11, each chip 11 being an independent light-emitting unit. Taking a two-channel chip assembly 1 as an example, the pump light emitted from each chip 11 in the two-channel chip assembly 1 is emitted along direction A to the collimating assemblies 2 corresponding to that chip, and after being redirected, is transmitted along direction B to the polarization beam combiner 3. Directions A and B are orthogonal.
[0031] Collimation component 2 is disposed in the output optical path of the pump light from each chip to convert the pump light into a collimated beam. Typically, the pump light emitted from chip component 1 has a large divergence angle; collimation component 2 is used to collimate the pump light, converting it into a linearly polarized collimated beam. In this embodiment, collimation component 2 may include a fast-axis collimating mirror and a slow-axis collimating mirror arranged sequentially. The fast-axis collimating mirror is disposed close to the light-emitting surface of the corresponding chip and connected to the optical path of the corresponding slow-axis collimating mirror. The fast-axis collimating mirror is used to collimate the light spot in the fast-axis direction of the laser, and the slow-axis collimating mirror is used to collimate the light spot in the slow-axis direction of the laser.
[0032] For example, the chip assembly of the semiconductor laser device in this embodiment can be divided into double rows or single rows along direction B. The light-emitting centers of each chip in the same row are located on different planes. A fast-axis collimating lens and a slow-axis collimating lens are placed sequentially on each chip 11 along the direction of the light output path. These two can be regarded as a set of steering and compression optical elements. The steering and compression optical elements can steering and compress the collimated beam after passing through the fast-axis collimating lens and the slow-axis collimating lens.
[0033] The beam combiner 3 is disposed in the output optical path of at least two collimated beams to combine multiple collimated beams into a single collimated beam. Exemplarily, a polarized beam combiner (PBC) can be used to combine collimated beams with orthogonal polarization states. In this embodiment of the invention, the polarized beam combiner can be sheet-like or block-like, and the embodiment does not impose any limitations on its shape. Figure 1 The example used here is only a block shape.
[0034] Please continue to refer to Figure 1 The shaping component 4 is disposed in the output optical path of the collimated beam to shape and split the collimated beam. In the embodiments of this application, the shaping component 4 includes a deformable prism 41 and a beam splitting element 43 arranged in sequence. The beam splitting element 43 includes a plurality of identical sub-lenses arranged in a predetermined shape, and the number of coupling optical fibers is consistent with the number of sub-lenses.
[0035] In one embodiment, the beam splitter 43 includes a plurality of identical sub-lenses 430 arranged in a predetermined shape, and the number of coupling fibers is consistent with the number of sub-lenses 430. After the collimated beam is incident from each sub-lens 430, it is coupled into the corresponding coupling fiber.
[0036] Optionally, each sub-lens can be a spherical lens, an aspherical lens, or a cylindrical lens.
[0037] Please continue to refer to this. Figure 3When the beam-splitting element 43 is configured as a compound eye lens, each sub-lens of the compound eye lens is a spherical lens, arranged in an N×M array to split the collimated beam into N×M sub-beams. The working principle of the beam-splitting element 43 can be understood as follows: the beam-splitting element is a microstructure that mimics the optical system of an insect compound eye, composed of N×M rectangular aperture spherical sub-lenses 430 arranged in a matrix with the same specifications. Each spherical sub-lens 430 is equivalent to a pixel. These spherical sub-lenses 430 can independently converge light to form an image, and then the images formed by the individual spherical sub-lenses 430 are superimposed to obtain the imaging result of the entire beam-splitting element.
[0038] Where N and M are positive integers, the values of N and M depend on the beam splitting requirements of the semiconductor laser device, and the corresponding beam splitting is N×M sub-beams, which are received by the coupling fiber to complete the multi-coupled fiber output, thus realizing multi-beam output.
[0039] Among them, multi-coupled fiber output refers to multiple pigtail outputs, and the shape of the sub-lens can also be hexagonal, circular, etc.
[0040] It should be explained that, considering the relatively wide light-emitting strip of the high-power chip 11, for example, a light-emitting strip with a width of 400μm can generally be coupled into a coupling fiber with a diameter of 400μm, and after focusing, it can only be coupled into a coupling fiber with a diameter of 300μm. However, in this embodiment of the invention, the coupled beam-splitting element 43 is used to split the focused light spot into N×M sub-beams. The light spot received by each coupling fiber becomes smaller, the light density becomes larger, thereby improving the brightness of the final output beam.
[0041] In some embodiments, the deformable prism 41 is a right-angle prism, and the collimated beam output from the pump light module is incident from the right-angle facet or inclined facet of the right-angle prism. The right-angle prism is used for collimation beam correction, so that the size of the collimated beam spot is consistent in the slow axis direction and the fast axis direction.
[0042] A right-angle prism is an optical element that can magnify or reduce an elliptical beam in one dimension, converting the elliptical output beam of a laser diode into an approximately circular beam, and vice versa. As an example, right-angle prisms are typically made of high-quality transparent materials, such as SF11 glass. Their dimensional tolerances are +0.0 / -0.2 mm, aperture is greater than 80%, angle tolerance is ±3 arcmin, surface quality is 60-40 SD, surface flatness is less than λ / 4 @ 632.8 nm, protective chamfer is less than 0.25 mm x 45 degrees, and coatings can be provided upon request.
[0043] Specifically, refer to Figure 1The pump light emitted from several chips 11 in chip assembly 1 is first shaped along its fast axis by the fast-axis collimating lens in collimating assembly 2, and then shaped along its slow axis by the slow-axis collimating lens. The multi-output collimated beams from each chip 11 are stacked along the fast axis and transmitted to beam combining assembly 3. After being combined into a single collimated beam, it is transmitted to the surface of a right-angle prism. Here, the merged collimated beam can be monitored as an irregular rectangular or irregular spot. However, the pump light emitted from each chip 11 in chip assembly 1 is usually elliptical. The right-angle prism can expand the beam along the fast axis or contract it along the slow axis, shaping the emitted spot into an approximately square or circular spot. This spot is then focused by a focusing lens and directly output as spatial light or coupled into a coupling fiber for output.
[0044] Please refer to Figure 2 , Figure 2 This application provides a schematic diagram of the output optical path principle of a right-angle prism. The output optical path principle of the right-angle prism is as follows: The collimated beam (elliptical beam) refracts after passing through the right-angle prism, satisfying the Snell's law of refraction: n0sinθ1 = nsinθ2. Where θ1 is the angle between the collimated beam and the normal to the incident surface of the right-angle prism, i.e., the angle of incidence; θ2 is the angle of refraction of the collimated beam at the interface of the right-angle prism; n0 is the refractive index of air; and n is the refractive index of the right-angle prism.
[0045] Optionally, the refractive index n of the right-angle prism is greater than or equal to 1.45, and the transmittance is greater than 95%, wherein the refractive index of air is 1. Using a right-angle prism made of a material with a larger refractive index is beneficial to increasing the optical path of the collimated beam and improving the shaping effect of the light spot.
[0046] In embodiments of this application, the collimated beam can be incident on the right-angled face of a right-angle prism, resulting in beam contraction along the fast axis; or, the collimated beam can be incident on the inclined face of a right-angle prism, resulting in beam expansion along the slow axis, thus achieving consistent beam spot size in both the slow and fast axis directions. (Reference) Figure 2 This embodiment of the invention is illustrated using the example of a collimated beam incident on the inclined surface of a right-angle prism and exiting from the same surface. Before the collimated beam incident on the inclined surface of the right-angle prism, the slow axis diameter is D1, and the fast axis diameter is D2. After the collimated beam incident on the inclined surface and passes through the prism, the slow axis diameter D1 of the beam spot is magnified to D2, where D1 < D2. The magnification ratio is the cosine ratio of the refraction angle θ2 to the incident angle θ1. This magnification ratio can also be called the beam expansion ratio M. M can be calculated using the formula below:
[0047] This can be understood as the beam expansion rate M of the right-angle prism being equal to the designed slow-axis beam expansion rate. In this embodiment of the invention, the right-angle prism expands the slow-axis diameter D1 of the collimated beam to D2, hence M = D2 / D1. Thus, the elliptical collimated beam, after being combined by the beam combiner 3, is shaped by the right-angle prism into an approximately square or circular light spot for output. This reduces the impact of the astigmatic characteristics of the chip 11 and improves the beam quality of the output laser.
[0048] In other embodiments, the fast axis diameter D2 can be reduced to D1 by using a right-angle prism, which can also achieve spot shaping of the collimated beam to achieve an approximately square or circular spot output. The embodiments of this utility model will not be explained in detail here.
[0049] It should be noted that, in this embodiment of the invention, a right-angle prism can be used to change the beam diameter along either the fast or slow axis of the collimated beam, while maintaining the optical axis of the collimated beam unchanged and propagating along the other axis, thereby expanding the beam size and reshaping the beam. The characteristics of the right-angle prism can be used to correct the asymmetric elliptical beam generated by chip 11, obtaining a nearly circular (or square) laser spot, which facilitates subsequent fiber coupling or beam splitting.
[0050] In this embodiment of the invention, the focusing lens in the shaping component can be an aspherical lens. In this embodiment, a right-angle prism is used to shape the collimated beam spot. Since the right-angle prism has already shaped the collimated beam from an elliptical beam into a circular beam, only one focusing lens is needed at the rear end of the shaped collimated beam to further compress the divergence angle, thus achieving high-brightness single-beam output. Compared to the prior art, which requires setting a fast-axis collimating lens and a slow-axis collimating lens after the beam combiner 3, this application eliminates the more expensive slow-axis focusing lens that would otherwise be located at the rear end of the beam combiner 3, reducing production costs. Furthermore, the semiconductor laser device provided by this embodiment has the advantages of a short working length and a compact output optical path structure, which is beneficial for the development of lasers to smaller sizes and higher integration.
[0051] It should be noted that in optical structures based on conventional focusing modules, the conventional slow-axis focusing lens is typically a spherical cylindrical lens, but it can also be an aspherical cylindrical lens. In the field of high-power lasers, spherical lenses are limited by high power, resulting in limited choices and focal lengths, and are more expensive compared to flat glass processing. However, in the semiconductor laser device provided in this embodiment, the right-angle prism has a large angle tolerance and low surface precision requirements, which can reduce the cost of the lens to a certain extent.
[0052] It should be noted that when the right-angle prism and beam splitter 43 are used in combination, the right-angle prism is first used to correct the laser spot of the collimated beam, and then the beam splitter 43 is used to focus and image the collimated beam after spot correction, forming multiple sub-beams that are coupled into the coupling fiber. The right-angle prism and beam splitter 43 have the advantages described in the above embodiments, which will not be repeated here. In this way, the final output laser beam can obtain a circular spot with good spot quality, and at the same time, the spot size of each sub-beam after beam splitting is smaller, the light density is increased, and the brightness is high. At the same time, there is no need to set a fast-axis collimator and a slow-axis collimator at the rear end of the beam combiner 3, thereby reducing production costs and meeting the application requirements of multi-beam, high-power, high-brightness, and circular spot output.
[0053] Based on the above embodiments, please continue to refer to Figure 1 The beam combining assembly 3 includes a polarization beam combiner and a plurality of first beam-directing elements 51. Each first beam-directing element is used to direct the collimated beam emitted from the collimating assembly to the polarization beam combiner. It can be understood that the polarization beam combiner includes a first incident surface and a second incident surface. The first incident surface is used to reflect the incident beam, and the second incident surface is used to transmit the incident beam. The incident beam and the reflected beam are combined in the polarization beam combiner and output in the same direction. At least some of the first beam-directing elements 51 are disposed corresponding to the output end of the collimating assembly 2, and are used to receive each collimated beam and reflect and direct it to the first and second incident surfaces of the polarization beam combiner. The polarization beam combiner outputs collimated beams with orthogonal polarization states. The first beam-directing elements 51 can be mirrors.
[0054] Based on the above embodiments, refer to Figure 1 At least one chip assembly 1 includes a first chipset and a second chipset. A first pump light emitted from the first chipset is collimated into a first collimated beam by a collimating assembly 2, and a second pump light emitted from the second chipset is collimated into a second collimated beam by the collimating assembly 2. Exemplarily, the polarization states of the first and second collimated beams are orthogonal; the first collimated beam is S-polarized light, and the second collimated beam is P-polarized light. The first collimated beam is deflected by a first spot-directing element 51 and then reflected by a polarization combiner, before spreading along a first direction (…). Figure 1 The second collimated beam is output in the first direction (B direction), and after being turned by the first spot-directing element 51, it is output along the first direction through the polarization combiner. Figure 1 (In the B direction). One of the first collimated beam and the second collimated beam is further deflected by the first spot-directing element to the first incident surface of the polarization combiner, while the other beam directly enters the second incident surface of the polarization combiner. After being combined by the polarization combiner, the two beams are output along the same beam direction to obtain a collimated beam.
[0055] Optional, see reference Figure 1The semiconductor laser device also includes a half-wave plate (not shown in the figure), which is disposed in the optical path between a polarization combiner and a first spot-directing element 51 corresponding to the second incident surface of the polarization combiner. The half-wave plate can also be called a phase retardation plate or a half-wave plate. It is made of a birefringent material. Using a half-wave plate can change the polarization direction of linearly polarized light, for example, converting vertically polarized light into horizontally polarized light. In some embodiments, the polarization directions of the first collimated beam and the second collimated beam are not orthogonal. By adding a half-wave plate, the polarization direction of the second collimated beam can be adjusted so that the polarization directions of the second collimated beam and the first collimated beam are orthogonal.
[0056] Based on the above embodiments, refer to Figure 1 The semiconductor laser device also includes a housing substrate 6, on which the chip assembly 1 is disposed. The housing substrate 6 is used to support and encapsulate the various components of the semiconductor laser device. In this embodiment, each chip assembly 1 includes multiple chips 11. According to the number of chips 11 in the chip assembly 1, a stepped structure is set at the position of the housing substrate 6 corresponding to each chip assembly 1. A group of chips 11 is placed on each stepped structure, and the light emission centers of multiple chips 11 in the same path are all on different planes. After several chips 11 are collimated by the collimating assembly 2, they are reflected by their corresponding first spot turning element 51. The multiple collimated beams are stacked in the fast axis direction to the beam combining assembly 3. After being combined by the beam combining assembly 3, they are shaped and output by the shaping assembly 4. This arrangement is beneficial for the coaxiality of multiple pump beams and improves the laser coupling efficiency.
[0057] It is understandable that, along the direction away from the beam-combining component 3, the height of the stepped structure increases sequentially, and the light-emitting centers of two adjacent chips 11 become higher sequentially.
[0058] Based on the above embodiments, refer to Figure 1 The semiconductor laser device also includes a second beam steering element 52, which is disposed in the light output direction of the right-angle prism. This second beam steering element 52 is used to adjust the output direction of the collimated beam output from the right-angle prism, reducing the length of the semiconductor laser device along the first direction, which is beneficial for overall integration and miniaturization. The second beam steering element 52 can be a coated mirror.
[0059] For example, refer to Figure 1 The second beam turning element 52 is disposed in the optical path between the deformable prism 41 and the beam splitting element 43, and is used to turn the beam after being shaped by the deformable prism 41 to the beam splitting element 43.
[0060] In the embodiments of this application, the first beam steering element 51 and the second beam steering element 52 are both perpendicular to the housing substrate 6 to ensure that the laser output beam can be emitted in a horizontal direction during normal use.
[0061] refer to Figure 1 The shaping component 4 may also include a fixing member 45, through which the deforming prism 41 is fixed to the surface of the housing substrate.
[0062] In this embodiment of the invention, the number of chip components can be reasonably selected according to the output power. Each group of chip components emits one pump light. Multiple pump lights are output after beam shaping by collimation component, beam combining component, spot shaping, focusing coupling or beam splitting, so as to achieve high power and high brightness laser output.
[0063] It should be noted that the semiconductor laser device also includes an electrical module (not shown in the figure). The electrical module is electrically connected to the pump light module. The electrical module includes a control circuit. The chip assembly is electrically connected to the control circuit. The control circuit is configured to control the driving current of the light-emitting component to adjust the power value of the pump light and stabilize the laser power of the collimated beam.
[0064] Note that the above description is merely a preferred embodiment of the present invention and the technical principles employed. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and various obvious changes, readjustments, combinations, and substitutions can be made without departing from the protection scope of the present invention. Therefore, although the present invention has been described in detail through the above embodiments, the present invention is not limited to the above embodiments. Many other equivalent embodiments may be included without departing from the concept of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims
1. A semiconductor laser device, characterized by comprising: The application relates to a semiconductor laser device. The semiconductor laser device comprises a pump light module for outputting a single collimated light beam; a shaping assembly arranged on an output light path of the collimated light beam, the shaping assembly comprising a deformation prism and a beam splitting element arranged in sequence, the deformation prism being used for correcting the collimated light beam so that the size of a light spot of the collimated light beam in a slow axis direction and a fast axis direction is consistent, and the beam splitting element being used for splitting the corrected collimated light beam to form multiple sub light beams and output the multiple sub light beams; and multiple coupling optical fibers, each of the sub light beams being coupled into a corresponding coupling optical fiber after being emitted from the beam splitting element. The deformation prism is a right-angle prism. The collimated light beam is incident on a right-angle surface of the right-angle prism to shrink the linear diameter of the collimated light beam in the fast axis direction; or The collimated light beam is incident on an inclined surface of the right-angle prism to expand the linear diameter of the collimated light beam in the slow axis direction.
2. The semiconductor laser device according to claim 1, characterized by The semiconductor laser device further comprises a housing substrate, the shaping assembly further comprises a fixing member, and the deformation prism is fixed to a surface of the housing substrate through the fixing member.
3. The semiconductor laser device according to claim 2, characterized in that The beam splitting element comprises multiple identical sub lenses arranged in a predetermined shape, and the number of the coupling optical fibers is consistent with the number of the sub lenses. Each of the sub lenses is a spherical lens, an aspherical lens or a cylindrical lens.
4. The semiconductor laser device according to claim 1, characterized by Each of the sub lenses is arranged in an N*M array to split the collimated light beam into N*M sub light beams.
5. The semiconductor laser device according to claim 1, characterized by The pump light module comprises a beam combining assembly, at least one chip assembly and multiple collimating assemblies corresponding to each chip in the chip assembly, the collimating assemblies being used for converting pump light emitted from the corresponding chips into collimated light beams; 6. The semiconductor laser device according to claim 5, characterized in that The beam combining assembly is arranged on an output light path of at least two collimated light beams and is used for combining multiple collimated light beams into a single collimated light beam.
7. The semiconductor laser device according to claim 5, wherein The beam combining assembly comprises a polarization beam combiner and multiple first light spot turning elements, each of the first light spot turning elements being used for turning the collimated light beam emitted from the collimating assembly to the polarization beam combiner.
8. The semiconductor laser device of claim 1, wherein The at least one chip assembly comprises a first chip assembly and a second chip assembly, wherein first pump light emitted from the first chip assembly is converted into a first collimated light beam by a collimating assembly, and second pump light emitted from the second chip assembly is converted into a second collimated light beam by the collimating assembly; 9. The semiconductor laser device of claim 8, wherein the first collimated light beam is turned by the first light spot turning element, is reflected by the polarization beam combiner and is output in a first direction, and the second collimated light beam is turned by the first light spot turning element and is output in the first direction by penetrating through the polarization beam combiner.
10. The semiconductor laser device of claim 9, wherein