Solar cell metallization device

Abstract

The utility model provides a solar cell metallization device, which comprises a carrier plate, a light blocking layer and a laser module, and is characterized in that the light blocking layer is arranged on a backlight surface or a light incident surface of the carrier plate; the backlight surface of the carrier plate is provided with a plurality of grooves, each groove is filled with conductive slurry, the light blocking layer is provided with a plurality of vertically-through light-transmitting patterns, the light-transmitting patterns are in one-to-one correspondence with the grooves, and the width of the light-transmitting patterns is equal to the maximum width of the grooves; after the laser module transmits a first laser beam to transfer the conductive slurry on the carrier plate to the silicon substrate, the relative position between the carrier plate and the silicon substrate is kept unchanged, and the laser module transmits a second laser beam to sinter the conductive slurry; the first laser beam and the second laser beam can penetrate through the carrier plate to act on the conductive slurry, and the light spot width of the first laser beam and the second laser beam is larger than or equal to the maximum width of the groove. According to the invention, the contact performance between the metal electrode and the silicon substrate can be improved, and the passivation layer of the non-electrode area of the silicon substrate can be prevented from being damaged by too large laser energy.

Description

Technical Field

[0001] This application belongs to the field of solar cell manufacturing technology, specifically relating to a solar cell metallization device. Background Technology

[0002] Cell metallization is a crucial step in the manufacturing process of solar cells. It involves creating metal electrodes on the front and back of the solar cell to provide a path for current output. Typically the final step in solar cell manufacturing, it significantly impacts the contact resistance and adhesion strength between the electrodes and the silicon interface.

[0003] The current metallization process for solar cells involves printing electrode paste onto a silicon substrate, then transferring it to a sintering furnace. Through drying, coking, sintering, and cooling, electrodes are fabricated on the silicon substrate. The quality of contact between the electrode and the silicon substrate directly affects the performance of the solar cell.

[0004] Furthermore, existing technologies also employ laser sintering to fabricate electrodes on silicon substrates. Laser sintering uses a high-precision, high-energy laser beam to instantly melt the metal at the contact point between the electrode and the silicon substrate, forming a robust alloy junction, thereby significantly improving the electrode's contact performance. This improvement not only reduces contact resistance but also enhances current collection efficiency, allowing more light energy to be effectively converted into electrical energy. Additionally, the concentrated laser energy heats only the target area, avoiding thermal damage to surrounding materials and further improving the battery's conversion efficiency.

[0005] However, during laser sintering, small-spot lasers cannot be perfectly aligned with the grid lines, while large-spot lasers will simultaneously heat the non-grid line areas, destroying the passivation effect of the non-grid line areas. This is especially true for low-temperature process cells such as heterojunction cells, where the impact on the passivation effect of the non-grid line areas is even greater. Utility Model Content

[0006] In view of this, this application provides a solar cell metallization device that can improve the contact performance of the electrodes while preventing excessive laser energy from damaging the passivation layer in the non-electrode areas of the silicon substrate.

[0007] A solar cell metallization device includes a carrier plate, a light-blocking layer, and a laser module. The light-blocking layer is disposed on the back side or the light-incident side of the carrier plate.

[0008] The back side of the carrier board has several grooves, each filled with conductive paste. The light-blocking layer has several light-transmitting patterns that run vertically through it. The number of light-transmitting patterns is the same as the number of grooves, and they are set one-to-one. The width of the light-transmitting pattern is equal to the maximum width of the groove.

[0009] The laser module is positioned above the carrier plate. After the laser module emits a first laser beam to transfer the conductive paste on the carrier plate to the silicon substrate below the carrier plate, the relative position between the carrier plate and the silicon substrate remains unchanged. The laser module then emits a second laser beam to sinter the conductive paste on the silicon substrate.

[0010] The first and second laser beams can penetrate the carrier plate and act on the conductive paste, and the spot widths of the first and second laser beams are greater than or equal to the maximum width of the trench.

[0011] Preferably, the spacing between the carrier and the silicon substrate is 20-500 μm.

[0012] Preferably, the light-blocking layer material is a reflective material or a light-absorbing material.

[0013] Preferably, the thickness of the light-blocking layer is 0.1–20 μm.

[0014] Preferably, the carrier material is a rigid transparent material.

[0015] Preferably, the spot widths of the first and second laser beams are 30–300 μm.

[0016] Preferably, the power of the first laser beam is 20-1000W, and the power of the second laser beam is 500-6000W.

[0017] Preferably, the laser module includes a moving mechanism and a first laser unit and a second laser unit connected to the moving mechanism;

[0018] The moving mechanism drives the first laser unit and the second laser unit to move sequentially above the carrier plate. The first laser unit emits a first laser beam to transfer the conductive paste on the carrier plate onto the silicon substrate, and the second laser unit emits a second laser beam to sinter the conductive paste.

[0019] Preferably, it also includes a drive mechanism that drives the carrier and the silicon substrate to move synchronously;

[0020] The laser module includes a first laser unit and a second laser unit. The first laser unit emits a first laser beam to transfer the conductive paste on the carrier plate to the silicon substrate. The driving mechanism drives the carrier plate and the silicon substrate to move synchronously below the second laser unit. The second laser unit emits a second laser beam to sinter the conductive paste.

[0021] Preferably, the laser module emits a first laser beam to transfer the conductive paste on the carrier plate onto the silicon substrate, and then the power of the laser module is adjusted so that the laser module emits a second laser beam to sinter the conductive paste.

[0022] The beneficial effects of this application are: by setting a light-blocking layer in the area outside the trench of the carrier board, the laser will only irradiate the gate line area of ​​the silicon substrate during the transfer and sintering process, and will not irradiate the non-gate line area of ​​the silicon substrate, thereby improving the transfer and sintering yield, thereby improving the contact performance between the prepared metal electrode and the silicon substrate, and preventing excessive laser energy from damaging the passivation layer of the non-electrode area of ​​the silicon substrate. Attached Figure Description

[0023] To more clearly illustrate the technical solutions in the embodiments of this application or related technologies, the drawings used in the description of the embodiments or prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of this application. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0024] The structures, proportions, sizes, etc., shown in the accompanying drawings are only for the purpose of assisting those skilled in the art in understanding and reading the content disclosed in the specification, and are not intended to limit the implementation conditions of this application. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in the proportions, or adjustments to the size should still fall within the scope of the technical content disclosed in this application, provided that they do not affect the effects and purposes that this application can produce.

[0025] Figure 1 A schematic diagram of the structure of a carrier plate according to one embodiment of this application;

[0026] Figure 2 A schematic diagram of the structure of a carrier plate for another embodiment provided in this application;

[0027] Figure 3 A schematic diagram of laser transfer provided for this application;

[0028] Figure 4 A schematic diagram of laser sintering provided in this application;

[0029] Figure 5 For including Figure 1 One type of solar cell metallization device shown on the carrier plate;

[0030] Figure 6 For including Figure 1 Another solar cell metallization device for the carrier plate shown;

[0031] Figure 7 For including Figure 1 Another solar cell metallization device shown on the carrier plate.

[0032] In the figure: 1-carrier plate; 11-groove; 2-light-blocking layer; 21-light-transmitting pattern; 3-laser module; 31-first laser unit; 32-second laser unit; 33-moving mechanism; 4-conductive paste; 5-silicon substrate; 6-first laser beam; 7-second laser beam. Detailed Implementation

[0033] The embodiments of this application will now be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0034] To make the above-mentioned objectives, features and advantages of this application more apparent and understandable, the application will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0035] When using laser transfer combined with laser sintering to fabricate metal electrodes for solar cells, laser irradiation is used to transfer the paste on the carrier plate onto the silicon substrate, and laser irradiation is used to sinter the paste transferred onto the silicon substrate, thereby producing the metal electrode.

[0036] This application provides a solar cell metallization device, with reference to... Figure 1-7 It includes a carrier plate 1, a light-blocking layer 2, and a laser module 3. The carrier plate 1 has a back light surface and a light-incident surface, and the light-blocking layer 2 is disposed on the back light surface side or the light-incident surface side of the carrier plate 1.

[0037] The backlight side of the carrier plate 1 is provided with a number of grooves 11, each groove 11 is filled with conductive paste 4, and the light-blocking layer 2 is provided with a number of light-transmitting patterns 21 that run vertically through the surface. The number of light-transmitting patterns 21 is the same as the number of grooves 11, and they are set one to one. The width of the light-transmitting pattern 21 is equal to the maximum width of the groove 11.

[0038] The laser module 3 is positioned above the carrier plate 1. After the laser module 3 emits a first laser beam 6 to transfer the conductive paste 4 on the carrier plate 1 to the silicon substrate 5 below the carrier plate 1, the relative position between the carrier plate 1 and the silicon substrate 5 remains unchanged. The laser module 3 then emits a second laser beam 7 to sinter the conductive paste 4 on the silicon substrate 5.

[0039] The first laser beam 6 and the second laser beam 7 can penetrate the carrier plate 1 and act on the conductive paste 4, and the spot width of the first laser beam 6 and the second laser beam 7 is greater than or equal to the maximum width of the groove 11.

[0040] The backlight side of the carrier plate 1 refers to the side of the carrier plate 1 facing the silicon substrate 5, and the light-incident side of the carrier plate 1 refers to the side of the carrier plate 1 facing the laser module 3.

[0041] In order for the laser beam emitted by the laser module 3 to pass through the carrier plate 1 and act on the conductive paste 4, the carrier plate 1 is made of a transparent material. The carrier plate 1 can be a transparent flexible carrier plate, such as being made of at least one material selected from polyethylene, polypropylene, polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate, fully aromatic polyester, polymethyl methacrylate, polycarbonate, polyamide, polysulfone, polyethersulfone, polyetherketone, polyamide-imide, polyether-imide, aromatic polyimide, alicyclic polyimide, fluorinated polyimide, cellulose acetate, cellulose nitrate, aromatic polyamide, polyvinyl chloride, polyphenol, polyarylate, polyphenylene sulfide, polyphenylene ether, and polystyrene; the carrier plate 1 can also be a transparent rigid carrier plate, such as being made of at least one material selected from quartz, borosilicate glass, polymethyl methacrylate, polystyrene, polycarbonate, polydiallyl diethylene glycol carbonate, and transparent glass fiber reinforced plastic; or the carrier plate 1 can be partially made of flexible transparent material and the remaining part made of rigid material.

[0042] In a preferred embodiment, the carrier plate 1 is made of a rigid transparent material.

[0043] The number of grooves 11 provided on the back side of the carrier 1 is the same as the number of gate lines to be formed on the silicon substrate 5, and the shape and size of the grooves 11 are the same as the gate line pattern. Correspondingly, the number of light-transmitting patterns 21 is also the same as the number of gate lines to be formed on the silicon substrate 5.

[0044] When the light-blocking layer 2 is placed on the back side of the carrier plate 1 (refer to...) Figure 1 Each light-transmitting pattern 21 overlaps with the area of ​​a groove 11, ensuring that the area of ​​the backlight surface of the carrier plate 1, except for the groove 11, is blocked by the light-blocking layer 2. When the light-blocking layer 2 is disposed on the light-incident surface side of the carrier plate 1 (refer to...), Figure 2 The projection of each light-transmitting pattern 21 on the backlight surface of the carrier plate 1 coincides with the area of ​​a groove 11, so that the light-incident surface of the carrier plate 1, except for the projection area of ​​the groove 11 on the light-incident surface of the carrier plate 1, is blocked by the light-blocking layer 2.

[0045] This embodiment does not specifically limit the shape of the light-transmitting pattern 21, as long as the non-gate area of ​​the silicon substrate 5 is not irradiated by the laser during laser irradiation.

[0046] The shape of groove 11 may not be square, but rather like... Figure 4The top-narrow, bottom-wide shape shown is designed to completely transfer the conductive paste 4 within the trench 11 onto the silicon substrate 5 and to effectively sinter the conductive paste 4. In this embodiment, the width of the light-transmitting pattern 21 is designed to be equal to the maximum width of the trench 11, and the spot widths of the first laser beam 6 and the second laser beam 7 are greater than or equal to the maximum width of the trench 11. Preferably, the spot widths of the first laser beam 6 and the second laser beam 7 can be set between 30 and 300 μm.

[0047] The width of the light-transmitting pattern 21 is equal to the maximum width of the trench 11, ensuring that the area of ​​the silicon substrate 5 outside the gate lines is completely blocked by the light-blocking layer 2 during laser irradiation, preventing laser irradiation on the non-gate line areas of the silicon substrate 5. The beam width of the laser module 3 acting on the conductive paste 4 is greater than or equal to the maximum width of the trench 11, ensuring that the conductive paste 4 within the entire trench 11 can be irradiated by the laser during transfer, allowing the conductive paste 4 to be well transferred to the silicon substrate 5. Furthermore, during laser sintering, the entire conductive paste 4 can be irradiated by the laser, ensuring good contact performance between the sintered metal electrode and the silicon substrate 5.

[0048] In a preferred embodiment, the distance between the carrier plate 1 and the silicon substrate 5 is 20-500μm to avoid direct contact between the carrier plate 1 and the silicon substrate 5, thereby reducing the fragmentation rate of the silicon substrate 5 and enabling the conductive paste 4 in the trench 11 to be transferred onto the silicon substrate 5, and obtaining good contact performance after sintering.

[0049] The light-blocking layer 2 in this embodiment can be made of reflective or light-absorbing material, and the thickness of the light-blocking layer 2 can be set between 0.1 and 20 μm.

[0050] If the light-blocking layer 2 is made of a reflective material, the light-blocking layer 2 can be a metal reflective layer. The metal layer has a high reflectivity to light. For example, the light-blocking layer 2 can be made of at least one of the following metal materials: copper, silver, aluminum, titanium, stainless steel, silver-aluminum alloy, nickel-chromium alloy, etc.

[0051] If the light-blocking layer 2 is made of a light-absorbing material, the light-blocking layer 2 can be made of at least one of the following materials: carbon nanotubes, graphene, nano carbon black, and Teflon.

[0052] In a preferred embodiment, the power of the first laser beam 6 is 20-1000W, and the power of the second laser beam 7 is 500-6000W, in order to obtain excellent transfer yield and contact performance.

[0053] In a preferred embodiment, the light-blocking layer 2 is fixedly connected to the backlight surface or light-incident surface of the carrier plate 1 by means of bonding, hot pressing, mechanical splicing, etc., or the light-blocking layer 2 can also be a plating or coating directly formed on the backlight surface or light-incident surface of the carrier plate 1.

[0054] In this embodiment, the light-blocking layer 2 is preferably disposed on the back surface of the carrier plate 1 to shorten the optical transmission path between the light-blocking layer 2 and the silicon substrate 5. The embodiments of this application will be further described below using the light-blocking layer 2 disposed on the back surface of the carrier plate 1 as an example.

[0055] In one possible implementation, a Teflon coating is made on the back surface of the carrier plate 1 (glass) as a light-blocking layer 2. At the location where the groove 11 is to be formed on the carrier plate 1, the light-blocking layer 2 is removed using a laser to form a light-transmitting pattern 21, thereby exposing the glass under the coating. The laser used can be infrared, green light, ultraviolet, or other wavelengths, and the pulse width can be nanosecond, picosecond, femtosecond, or other pulse widths.

[0056] Then, a laser beam is used to irradiate the carrier plate 1 from the side with the light-blocking layer 2. The exposed glass is irradiated by the laser, inducing absorption within the glass to modify it. Alternatively, the laser beam can be used to irradiate the carrier plate 1 from the side without the light-blocking layer 2, in which case only the area of ​​the glass where the groove 11 is to be formed is irradiated. The modified carrier plate 1 is then immersed in an etching solution, where the acid and alkali etching solutions selectively react with the glass in the modified area to form the desired groove 11.

[0057] On the glass transfer machine, a squeegee is used to fill the grooves 11 of the carrier plate 1 with conductive paste;

[0058] The carrier plate 1 is placed facing the silicon substrate 5 to be transferred, and each trench 11 on the carrier plate 1 is set in a one-to-one correspondence with the area on the silicon substrate 5 to be formed of the gate line. The distance between the carrier plate 1 and the silicon substrate 5 is between 20-500μm. The light-blocking layer 2 faces the silicon substrate 5. The laser module 3 emits the first laser beam 6 from the light-incident surface of the carrier plate 1 to irradiate the area where the trench 11 of the carrier plate 1 is located, and transfers the conductive paste 4 in the trench 11 to the silicon substrate 5.

[0059] The relative positions of the carrier plate 1 and the silicon substrate 5 remain unchanged, that is, the light-transmitting pattern 21 remains facing the conductive paste 4 on the silicon substrate 5. The laser module 3 emits a second laser beam 7 from the light-incident surface of the carrier plate 1 to irradiate the conductive paste 4 and sinter the conductive paste 4.

[0060] In one specific implementation, reference Figure 5 The laser module 3 includes a first laser unit 31, a second laser unit 32, and a moving mechanism 33. Both the first laser unit 31 and the second laser unit 32 are connected to the moving mechanism 33.

[0061] The moving mechanism 33 drives the first laser unit 31 and the second laser unit 32 to move sequentially above the carrier plate 1. The first laser unit 31 emits a first laser beam 6 to transfer the conductive paste 4 on the carrier plate 1 onto the silicon substrate 5. The second laser unit 32 emits a second laser beam 7 to sinter the conductive paste 4.

[0062] The first laser unit 31 can emit multiple first laser beams 6 to transfer multiple conductive pastes 4 on the carrier plate 1 onto the silicon substrate 5 together, or it can emit only one first laser beam 6 to transfer the conductive pastes 4 on the carrier plate 1 onto the silicon substrate 5 sequentially (see reference). Figure 3 Taking the first laser unit 31 emitting one first laser beam 6 each time as an example, during the transfer process, the first laser unit 31 is moved to the corresponding position above the carrier plate 1 by the moving mechanism 33. The first laser beam 6 emitted by the first laser unit 31 acts on one of the conductive pastes 4 on the carrier plate 1, so that the conductive paste 4 is transferred to the silicon substrate 5. Then, the first laser unit 31 is moved by the moving mechanism 33 so that the first laser beam 6 emitted by the first laser unit 31 acts on another untransferred conductive paste 4 on the carrier plate 1, until all the conductive pastes 4 on the carrier plate 1 are transferred to the corresponding positions on the silicon substrate 5.

[0063] After the transfer is completed, the second laser unit 32 is moved to the corresponding position above the carrier plate 1 by the moving mechanism. Similarly, the second laser unit 32 can emit multiple second laser beams 7, or it can emit only one second laser beam 7 (see reference). Figure 4 The process of the second laser unit 32 emitting the second laser beam 7 to sinter the conductive paste 4 is similar to the process of the first laser unit 31 emitting the first laser beam 6 to transfer the paste, and will not be described in detail here.

[0064] In this method, the positions of the carrier plate 1 and the silicon substrate 5 remain unchanged. The first laser unit 31 and the second laser unit 32 are moved by the moving mechanism 33 to transfer each conductive paste 4 onto the silicon substrate 5 and sinter the transferred conductive paste 4.

[0065] Alternatively, the first laser unit 31 can be moved to the corresponding position above the carrier plate 1 by the moving mechanism 33, and then the carrier plate 1 and silicon substrate 5 can be moved synchronously to move each conductive paste 4 to the bottom of the first laser unit 31, so that each groove pattern 11 is transferred onto the silicon substrate 5. Then, the second laser unit 32 can be moved to the corresponding position above the carrier plate 1 by the moving mechanism 33, and the carrier plate 1 and silicon substrate 5 can be moved synchronously to move each conductive paste 4 to the bottom of the second laser unit 32, so that each conductive paste 4 is sintered.

[0066] More specifically, after passing through a series of optical devices, the first laser unit 31 and the second laser unit 32 emit first laser beam 6 and second laser beam 7 with the same propagation direction, and then enter the optical path scanning system. In this way, the first laser unit 31 and the second laser unit 32 can share the galvanometer and the optical path scanning system downstream of the galvanometer, forming a common scanning path for the first laser beam 31 and the second laser beam 32. When laser sintering the conductive paste 4 on the silicon substrate 5, no secondary alignment adjustment is required by the optical path scanning system, and in-situ precise sintering can be achieved.

[0067] In another specific implementation, reference is made to... Figure 6 The solar cell metallization device also includes a drive mechanism (not shown in the figure), which drives the carrier plate 1 and the silicon substrate 5 to move synchronously.

[0068] The laser module 3 includes a first laser unit 31 and a second laser unit 32. The first laser unit 31 emits a first laser beam 6 to transfer the conductive paste 4 on the carrier plate 1 to the silicon substrate 5. The driving mechanism drives the carrier plate 1 and the silicon substrate 5 to move synchronously below the second laser unit 32. The second laser unit 32 emits a second laser beam 7 to sinter the conductive paste 4.

[0069] In this method, the first laser unit 31 and the second laser unit 32 do not need to move. The carrier plate 1 and the silicon substrate 5 are moved synchronously to the first laser unit 31 by the driving mechanism. The first laser unit 31 emits a first laser beam 6 to transfer the conductive paste 4 on the carrier plate 1 to the silicon substrate 5. Then the driving mechanism moves the carrier plate 1 and the silicon substrate 5 synchronously to the second laser unit 32. The second laser unit 32 emits a second laser beam 7 to sinter the conductive paste 4.

[0070] If the first laser unit 31 and the second laser unit 32 emit only one laser beam each time, the first laser unit 31 and the second laser unit 32 can also be set to be movable. When the carrier plate 1 and the silicon substrate 5 move synchronously to the first laser unit 31, the conductive paste 4 on the carrier plate 1 is transferred to the silicon substrate 5 in sequence by moving the first laser unit 31. Then the carrier plate 1 and the silicon substrate 5 move synchronously to the second laser unit 32, and the conductive paste 4 on the silicon substrate 5 is sintered in sequence by moving the second laser unit 32.

[0071] This embodiment does not impose specific limitations on the structure of the drive mechanism, as long as it enables the carrier plate 1 and the silicon substrate 5 to move synchronously and their relative positions remain unchanged.

[0072] Similar to the previous embodiment, the first laser unit 31 and the second laser unit 32 can also share the galvanometer and the optical path scanning system downstream of the galvanometer to form a first laser beam 31 and a second laser beam 32 with a common scanning path. When laser sintering the conductive paste 4 on the silicon substrate 5, the optical path scanning system does not need to perform secondary alignment adjustment, and in-situ precise sintering can be achieved.

[0073] In yet another specific implementation, reference is made to... Figure 7 The laser module 3 emits a first laser beam 6 to transfer the conductive paste 4 on the carrier plate 1 onto the silicon substrate 5. Then, the power of the laser module 3 is adjusted so that the laser module 3 emits a second laser beam 7 to sinter the conductive paste 4.

[0074] In this implementation, laser transfer and laser sintering share a single laser unit, and the transfer and sintering are accomplished by adjusting the laser power of the laser unit.

[0075] In one possible implementation, the laser module 3 is fixed, and the laser power is adjusted to the power of the first laser beam 6. The carrier plate 1 and the silicon substrate 5 move synchronously, so that all the conductive paste 4 on the carrier plate 1 is transferred to the silicon substrate 5. Then, the laser power is adjusted to the power of the second laser beam 7, and the carrier plate 1 and the silicon substrate 5 are moved synchronously again. While the relative positions of the carrier plate 1 and the silicon substrate 5 remain unchanged, the conductive paste 4 on the silicon substrate 5 is irradiated by the laser until all the conductive paste 4 on the silicon substrate 5 is sintered.

[0076] In another possible implementation, the laser module 3 moves, and once the relative positions of the carrier plate 1 and the silicon substrate 5 are determined, no further movement occurs. During laser transfer, the laser power is adjusted to the power of the first laser beam 6, and the conductive paste 4 on the carrier plate 1 is transferred to the silicon substrate 5 by moving the laser module 3. Then, the laser power is adjusted to the power of the second laser beam 7, and the laser module 3 is moved again to ensure that all the conductive paste 4 on the silicon substrate 5 is sintered.

[0077] In this embodiment, a light-blocking layer is provided in the area outside the trenches of the carrier board. This allows the laser to irradiate the conductive paste in the trenches during laser transfer, transferring the conductive paste onto the silicon substrate without irradiating areas outside the conductive paste on the silicon substrate, thus improving the laser transfer yield. After transfer, the relative positions of the carrier board and the silicon substrate remain unchanged. This ensures that during laser sintering, the laser only irradiates the conductive paste on the silicon substrate, while areas outside the conductive paste are not irradiated due to the light-blocking layer. This prevents excessive laser energy from damaging the passivation layer in the non-electrode areas of the silicon substrate and ensures good contact performance between the fabricated metal electrode and the silicon substrate.

[0078] The various embodiments in this specification are described in a progressive, parallel, or combined manner. Each embodiment focuses on its differences from other embodiments, and similar or identical parts between embodiments can be referred to interchangeably. For the apparatuses disclosed in the embodiments, since they correspond to the methods disclosed in the embodiments, the descriptions are relatively simple, and relevant parts can be referred to the method section.

[0079] It should be noted that, in the description of this application, the terms "upper," "lower," "top," "bottom," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application. When a component is considered to be "connected" to another component, it can be directly connected to the other component or there may be a component centrally located at the same time.

[0080] It should also be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that an article or apparatus comprising a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such an article or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the article or apparatus that includes the aforementioned element.

[0081] The above description of the disclosed embodiments enables those skilled in the art to make or use this application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of this application. Therefore, this application is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A solar cell metallization apparatus, characterized by, The application relates to a laser transfer printing device, which comprises a carrier plate, a light-blocking layer and a laser module. The back surface of the carrier plate is provided with a plurality of grooves, each of which is filled with conductive paste; the light-blocking layer is provided with a plurality of light-transmitting patterns which penetrate the light-blocking layer from top to bottom; the number of the light-transmitting patterns is equal to that of the grooves, and the light-transmitting patterns are arranged one by one in correspondence with the grooves; and the width of the light-transmitting patterns is equal to the maximum width of the grooves. The laser module is arranged above the carrier plate; after the laser module emits a first laser beam to transfer the conductive paste on the carrier plate to a silicon substrate below the carrier plate, the relative position between the carrier plate and the silicon substrate remains unchanged; and the laser module emits a second laser beam to sinter the conductive paste on the silicon substrate. The first laser beam and the second laser beam can pass through the carrier plate to act on the conductive paste, and the spot width of the first laser beam and the second laser beam is greater than or equal to the maximum width of the grooves.

2. The apparatus for solar cell metallization of claim 1, wherein, The distance between the carrier plate and the silicon substrate is 20-500 mu m.

3. The apparatus for solar cell metallization of claim 1, wherein, The light-blocking layer is made of a light-reflecting material or a light-absorbing material.

4. The solar cell metallization apparatus of claim 1, wherein, The thickness of the light-blocking layer is 0.1-20 mu m.

5. The apparatus for solar cell metallization of claim 1, wherein, The carrier plate is made of a rigid transparent material.

6. The solar cell metallization apparatus of claim 1, wherein, The spot width of the first laser beam and the second laser beam is 30-300 mu m.

7. The apparatus for metallizing solar cells according to any of claims 1-6, wherein The power of the first laser beam is 20-1000 W, and the power of the second laser beam is 500-6000 W.

8. The solar cell metallization apparatus of claim 7, wherein, The laser module comprises a moving mechanism and first and second laser units connected to the moving mechanism. The moving mechanism drives the first and second laser units to move above the carrier plate in sequence; the first laser unit emits the first laser beam to transfer the conductive paste on the carrier plate to the silicon substrate; and the second laser unit emits the second laser beam to sinter the conductive paste.

9. The solar cell metallization apparatus of claim 7, wherein, The device further comprises a driving mechanism which drives the carrier plate and the silicon substrate to move synchronously. The laser module comprises first and second laser units; the first laser unit emits the first laser beam to transfer the conductive paste on the carrier plate to the silicon substrate; the driving mechanism drives the carrier plate and the silicon substrate to move synchronously to below the second laser unit; and the second laser unit emits the second laser beam to sinter the conductive paste.

10. The solar cell metallization apparatus of claim 7, wherein, The laser module emits the first laser beam to transfer the conductive paste on the carrier plate to the silicon substrate; then the power of the laser module is adjusted so that the laser module emits the second laser beam to sinter the conductive paste.

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