Distributed transmission control power module

Abstract

The utility model discloses a distributed transmission control power module, and belongs to the field of semiconductor power devices. The power module comprises chips and a chip circuit carrier, the chips are arranged on the chip circuit carrier, the power module is arranged on the chips, a body diode is arranged on the power module, the chip circuit carrier comprises a ceramic copper-clad plate, the ceramic copper-clad plate is connected with a plurality of chips, the chips are connected with copper connecting bridges, and the copper connecting bridges are connected with the power module. Pins are arranged below the copper connecting bridge, and different polarities of the chip are connected with the ceramic copper-clad plate through the pins. The system has a simple structure, is convenient to use and maintain by adopting a modular design, and reduces the size of the system; the ceramic copper-clad plate is used as a chip circuit carrier, a heat dissipation surface is not electrified, an insulation sheet does not need to be additionally installed, and thermal resistance and cost are reduced. And the ceramic copper-clad plate is connected with the plurality of chips, and the plurality of chips are arranged on the ceramic copper-clad plate, so that the electromagnetic interference is reduced, the reliability is high, and the cost is low.

Description

TECHNICAL FIELD

[0001] The utility model belongs to the technical field of semiconductor power device, more specifically, relate to a kind of distributed transmission control power module. BACKGROUND

[0002] At present, semiconductor power device has been widely used in various power systems, in power supply, energy storage and other new energy fields, usually using distributed generation and transmission technology, unlike traditional power centralized generation and transmission, distributed power supply uses the transmission control of "point-to-point" type, with higher safety and operability.

[0003] At present, most of the high-power distributed generation and transmission circuit uses TO packaged discrete devices to realize the transmission control of current, when the current is further increased, more devices need to be connected in parallel, and because the heat dissipation surface of TO packaged device is electrified, additional insulation sheet is needed for use, which ultimately leads to redundant and complex power system, complicated use and maintenance, large system size, serious electromagnetic interference, low reliability, high thermal resistance and cost. SUMMARY

[0004] The utility model is just to solve the technical problems in prior art, provide a kind of distributed transmission control power module.

[0005] To solve the above technical problems, the utility model provides the following technical scheme: a kind of distributed transmission control power module, including chip and chip circuit carrier, chip is arranged on chip circuit carrier, further include power device, power device is arranged on chip, body diode is provided on power device, chip circuit carrier includes ceramic copper-clad plate, a plurality of chips are connected on ceramic copper-clad plate, copper bridge is connected on chip, pin is arranged below copper bridge, and pin connects different polarity of chip with ceramic copper-clad plate.

[0006] Preferably, a plurality of chips are connected in parallel to flow on ceramic copper-clad plate, and power device is provided with drain and source.

[0007] Preferably, power device has gate-source voltage and threshold voltage, when gate-source voltage is greater than threshold voltage, power device is forward conducting, and current can flow from drain to source;When gate-source voltage is less than threshold voltage, power device is in forward cut-off state, and current cannot flow.

[0008] Preferably, power device is provided with reverse body diode, when gate-source voltage is less than threshold voltage, body diode is turned on when reverse voltage is added to the ends of power device, allowing reverse current to flow.

[0009] Preferably, the power device is connected with bus current Y and shunt A current and shunt B current branched from the bus current, the bus current Y and the shunt A current are provided with power device VT1, power device VT2, body diode VD1 and body diode VD2, and the bus current Y and the shunt B current are provided with power device VT3, power device VT4, body diode VD3 and body diode VD4.

[0010] Preferably, the chip is a power chip, and the power device is an MOS device or an IGBT device.

[0011] Preferably, the ceramic copper-clad plate is a three-layer structure, comprising a copper layer, a ceramic layer and a second copper layer, and the ceramic copper-clad plate is a chip carrier and a heat dissipation substrate.

[0012] Preferably, the ceramic copper-clad plate is provided with an electrode area, the electrode area is connected with a Pin needle, the end of the Pin needle is connected with the chip, and the Pin needle is used for leading out and transmitting the electrode area current outward.

[0013] Preferably, the utility model also comprises a shell, a cavity is arranged in the shell, and the shell is arranged on the upper end of the chip and the ceramic copper-clad plate.

[0014] Compared with the prior art, the utility model has the following beneficial effects:

[0015] The utility model discloses simple structure, through adopting modularization design, convenient to use and maintain, reduce system volume, through the ceramic copper-clad plate as chip circuit carrier, the heat dissipation surface is not electrified, need not install the insulating sheet additionally, has reduced the thermal resistance and cost. BRIEF DESCRIPTION OF DRAWINGS

[0016] In order to more clearly illustrate the technical scheme in the embodiment of the present application, the following will briefly introduce the drawings needed to be used in the embodiment or prior art description, obviously, the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can also be obtained without creative labor.

[0017] Figure 1 It is the structural schematic diagram of the power module embodiment of the utility model;

[0018] Figure 2 It is the schematic diagram of the bus current Y of the power module flowing to the shunt A circuit;

[0019] Figure 3 It is the schematic diagram of the bus current Y of the power module flowing to the shunt B circuit;

[0020] Figure 4The utility model power module branch A current flow bus Y circuit schematic diagram is shown.

[0021] Figure 5 The utility model power module branch B current flow bus Y circuit schematic diagram is shown.

[0022] The symbol mark in the drawing is explained:

[0023] 1, chip;2, ceramic copper clad plate;3, copper bridge;4, shell;5, pin. Specific implementation

[0024] In order to make the technical problem of the present application, technical scheme and beneficial effect more clearly, the following is further detailed in conjunction with the drawings and examples.The specific embodiments described herein are merely intended to explain the present application and are not intended to limit the present application.

[0025] Please refer to Figure 1 The utility model provides a kind of distributed transmission control power module, including chip 1 and chip circuit carrier, chip 1 is arranged on chip circuit carrier, further include power device, power device is arranged on chip 1, body diode is provided on power device, chip circuit carrier includes ceramic copper clad plate 2, several chip 1 is connected on ceramic copper clad plate 2, chip 1 is further connected with copper bridge 3, pin is provided below copper bridge 3, pin connects different polarity of chip 1 with ceramic copper clad plate 2.

[0026] The utility model has simple structure, by using modular design, it is convenient to use and maintain, reduces system volume;By ceramic copper clad plate 2 as chip circuit carrier, heat dissipation surface is not electrified, need not extra installation insulating sheet, reduce thermal resistance and cost.And ceramic copper clad plate 2 is connected with several chip 1, several chip 1 is arranged on ceramic copper clad plate 2, reduces electromagnetic interference, and reliability is high, cost is low.

[0027] In the embodiment, several chip 1 is shunt current setting on ceramic copper clad plate 2, and ceramic copper clad plate 2 is used as the circuit carrier and heat dissipation substrate of chip 1, while improving power density, reduces electromagnetic interference in module and improves reliability.

[0028] Specifically, since the current carrying capacity of a single chip is limited, by using multiple chip parallel connection, the total current carrying capacity of the power module can be significantly improved, the application demand of high power is met, multiple chip parallel connection provides a certain redundancy, and the overall reliability of the system is improved.Ceramic copper clad plate 2 has high thermal conductivity and good insulation performance, can effectively reduce the thermal resistance of chip, improve the heat dissipation efficiency, so that the chip can work in more compact space, optimize the packaging structure, further improve the power density.

[0029] Further, by reasonable layout design of the chip on the ceramic copper-clad plate 2, the parallel connection current sharing design of the multiple chips can effectively balance the current distribution among the chips, avoid local overheating and device damage caused by uneven current distribution, reduce the parasitic inductance and resistance among the parallel connection chips, reduce the electromagnetic interference caused by uneven current distribution, and reduce the system volume; and the insulating layer of the ceramic copper-clad plate 2 can effectively isolate the electromagnetic coupling among different chips, and the good thermal stability of the ceramic copper-clad plate 2 also helps to reduce the electromagnetic interference caused by temperature change.

[0030] In the embodiment, the ceramic copper-clad plate 2 has a three-layer structure, including a copper layer, a ceramic layer and a second copper layer, the ceramic copper-clad plate 2 has a three-layer structure of copper-ceramic-copper, the ceramic copper-clad plate 2 can play a role of heat dissipation and insulation, the high thermal conductivity of the ceramic copper-clad plate 2 can quickly conduct the heat generated by the chip away, reduce the junction temperature of the chip 1, and thus prolong the service life of the device.

[0031] Further, as a preferred embodiment of the utility model, the chips on the ceramic copper-clad plate 2 can be arranged in a symmetrical manner, which can reduce the asymmetry of the current loop and further reduce electromagnetic interference.

[0032] Further, the chip 1 is an IGBT, MOS or other power chip, and the power device is an MOS device or an IGBT device.

[0033] As shown in Figure 1 The power module further includes a shell 4, the shell 4 is provided with a cavity, the shell 4 is arranged on the upper end of the chip 1 and the ceramic copper-clad plate 2, the internal cavity of the shell 4 can accommodate the internal components such as the ceramic copper-clad plate 2 and the chip 1, and provide an independent physical space for the power module, and the shell 4 plays a role of protection and support, and can protect the internal chip 1, the ceramic copper-clad plate 2 and other devices from external mechanical impact, vibration and physical damage. Moreover, by reasonably designing the shape and size of the cavity, the layout of the internal components can be optimized, and the integration and power density of the power module can be improved.

[0034] In the embodiment, the material of the shell 4 needs to have good thermal conductivity to ensure that heat can be quickly conducted from the chip to the heat sink, and the shell 4 has mechanical strength and can withstand external pressure and the weight of the internal components, and the shell material needs to have good insulation performance to prevent electrical short circuit.

[0035] Further, in the embodiment, a pin is arranged below the copper connecting bridge 3, the copper connecting bridge 3 is used to realize electrical connection between different functional areas in the chip or between different chips, the pin leads out different polarities of the chip and is connected with the corresponding area on the ceramic copper-clad plate 2, and electrical connection between the chip 1 and an external circuit is realized.

[0036] Specifically, the size, shape, and position of the bumps can be set according to the chip size, shape, and location. Brazing technology is used to connect the different polarities of the chip to the corresponding areas designed in the ceramic copper-clad laminate 2. By selecting appropriate solder, a high-strength connection between the chip 1 and the ceramic copper-clad laminate 2 can be achieved. Furthermore, brazing technology has good thermal conductivity; the brazing connection between copper and the ceramic copper-clad laminate 2 can effectively conduct heat, reducing the thermal resistance of the chip. Brazing technology is suitable for multi-chip parallel structures, enabling high-density interconnection between the chip and the substrate.

[0037] In this embodiment, an electrode area is provided on the ceramic copper-clad board 2, and a pin 5 is connected to the electrode area. The end of the pin 5 is connected to the chip 1, and the outer end of the pin 5 is connected to the housing 4 to connect to external devices. The current of the relevant electrode area designed on the ceramic copper-clad board 2 is led out to the outside of the device through the pin 5 so as to transmit current and control the switching of the device.

[0038] Pin 5 is used to draw the current generated by the chip from the ceramic copper-clad board 2 and transmit it to the external circuit. The larger the cross-sectional area of ​​Pin 5, the stronger the current transmission capability. Through pin connection, electrical control of the power module can be realized.

[0039] In this embodiment, the power device has a drain and a source, and the power device has a gate-source voltage and a threshold voltage. When the gate-source voltage is greater than the threshold voltage, the power device is forward-biased and the current can flow from the drain to the source. When the gate-source voltage is less than the threshold voltage, the power device is in a forward-biased cutoff state and the current cannot flow.

[0040] Specifically, such as Figures 2-5 As shown, the control method of the power module of this utility model is described using a MOS device as an example. V th V is the threshold voltage of a MOS device, representing the minimum voltage difference between the gate and source that allows the device to transition from the off state to the on state; GS This is the gate-source voltage of a MOS device, representing the voltage between the gate and the source. When the gate-source voltage is greater than the threshold voltage, a channel is formed in the MOS device, allowing current to flow from the drain to the source.

[0041] When V G11-S1 >V th When a MOS device is forward-biased, current can flow from the drain to the source; when V... G11-S1 <V th When the device is forward cut off, current cannot flow from the drain to the source.

[0042] Further, the MOS device is provided with a reverse body diode VD, the anode of the body diode is connected to the source, and the cathode is connected to the drain. When the gate-source voltage is less than the threshold voltage, and a reverse voltage is applied to the MOS device, the body diode will be turned on to allow reverse current to flow, allowing current to flow from the source to the drain. Under the condition of reverse voltage, the MOS device can realize reverse conduction through the body diode. The reverse conduction mode can be used for freewheeling or protection circuit to prevent reverse electromotive force from damaging the circuit.

[0043] In this embodiment, the power device is connected with bus current Y and shunt A current and shunt B current branched from the bus current, the bus current Y and the shunt A current are provided with power devices VT1, VT2, body diodes VD1, VD2, and the bus current Y and the shunt B current are provided with power devices VT3, VT4, body diodes VD3, VD4.

[0044] Specifically, in the control method of the power module, VT1, VT2, VT3, and VT4 are MOS devices, and VD1, VD2, VD3, and VD4 are body diodes corresponding to the MOS devices.

[0045] As shown in Figure 2 , control the bus current Y to flow to the shunt current A; when V G11-S1 >V th , V G12-S2 <V th , V G21-S1 <V th , V G11-S1 <V th , the device VT1 is turned on, and VT2, VT3, and VT4 are turned off, and the bus current Y flows through VT1 and VD2 in turn to the shunt A.

[0046] As shown in Figure 3 , control the bus current Y to flow to the shunt current B; when V G11-S1 <V th , V G12-S2 <V th , V G21-S1 >V th , V G11-S1 <V th , the device VT3 is turned on, and VT1, VT2, and VT4 are turned off, and the bus current Y flows through VT3 and VD4 in turn to the shunt B.

[0047] As shown in Figure 4 , control the shunt current A to flow to the bus current Y; when V G11-S1 <V th , V G12-S2 >V th , V G21-S1<V th V G11-S1 <V th At this time, device VT2 is turned on, while VT1, VT3, and VT4 are turned off. The shunt current A flows through VT2 and VD1 to the bus Y in sequence.

[0048] like Figure 5 As shown, the shunt current B is controlled to flow to the bus current Y; when V G11-S1 <V th V G12-S2 <V th V G21-S1 <V th V G11-S1 >V th At this time, device VT4 is turned on, while VT1, VT2, and VT3 are turned off. The branch current B flows to bus Y through VT4 and VD3 in sequence.

[0049] This invention provides a distributed transmission control power module with a simple system structure. Through modular design, it enables modular applications, facilitating use and maintenance and significantly reducing system size. Several chips are connected to a ceramic copper-clad laminate. The power module uses the ceramic copper-clad laminate as the chip circuit carrier and heat dissipation substrate. The heat dissipation surface is non-energized, eliminating the need for additional insulating sheets, thus reducing thermal resistance and cost. Furthermore, the chips on the ceramic copper-clad laminate employ a multi-chip parallel current-sharing design, increasing power density while reducing internal electromagnetic interference and improving reliability, further minimizing system size. It features low electromagnetic interference, high reliability, and low cost.

[0050] In the description of this utility model, it should be understood that terms such as “length”, “width”, “upper”, “lower”, “front”, “rear”, “left”, “right”, “vertical”, “horizontal”, “top”, “bottom”, “inner”, and “outer” indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0051] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this application, "multiple" means two or more, unless otherwise explicitly specified.

[0052] The above only describes preferred embodiments of the present application and is not used to limit the present application, and any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the protection scope of the present application.

Claims

1. A distributed transmission control power module, comprising a chip and a chip circuit carrier, wherein the chip is disposed on the chip circuit carrier, characterized in that, It also includes power devices disposed on the chip, and a body diode disposed on the power devices. The chip circuit carrier includes a ceramic copper-clad laminate, and a plurality of the chips are connected to the ceramic copper-clad laminate. Copper bridges are connected to the chips, and pins are disposed below the copper bridges. The pins connect the different polarities of the chips to the ceramic copper-clad laminate.

2. The distributed transmission control power module according to claim 1, characterized in that, Several of the aforementioned chips are connected in parallel and share current on the ceramic copper-clad laminate, and the power device is provided with a drain and a source.

3. The distributed transmission control power module according to claim 2, characterized in that, The power device has a gate-source voltage and a threshold voltage. When the gate-source voltage is greater than the threshold voltage, the power device is forward-biased and current can flow from the drain to the source. When the gate-source voltage is less than the threshold voltage, the power device is in a forward-biased cutoff state and current cannot flow.

4. A distributed transmission control power module according to claim 3, characterized in that, The power device is equipped with a reverse body diode. When the gate-source voltage is less than the threshold voltage, the body diode will conduct when a reverse voltage is applied across the power device, allowing reverse current to flow.

5. A distributed transmission control power module according to claim 1, characterized in that, The power device is connected to the bus current Y and the branch current A and branch current B branched from the bus current. Power devices VT1, VT2, body diode VD1, and body diode VD2 are provided between the bus current Y and the branch current A. Power devices VT3, VT4, body diode VD3, and body diode VD4 are provided between the bus current Y and the branch current B.

6. A distributed transmission control power module according to claim 1, characterized in that, The chip is a power chip, and the power device is a MOS device or an IGBT device.

7. A distributed transmission control power module according to claim 1, characterized in that, The ceramic copper-clad laminate has a three-layer structure, including a copper layer, a ceramic layer, and a second copper layer. The ceramic copper-clad laminate serves as a chip carrier and a heat dissipation substrate.

8. A distributed transmission control power module according to claim 1, characterized in that, An electrode area is provided on the ceramic copper-clad board, and a pin is connected to the electrode area. The end of the pin is connected to the chip, and the pin is used to lead out and transmit the current from the electrode area.

9. A distributed transmission control power module according to claim 1, characterized in that, It also includes a housing, which has a cavity inside, and the housing is disposed at the upper end of the chip and the ceramic copper-clad board.

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