High-current power semiconductor module with hybrid chip structure
By introducing a hybrid chip structure and a CLIP structure with bent copper strips into the IGBT module, the problems of existing IGBT modules being unable to withstand large currents and having poor heat dissipation are solved, achieving greater current carrying capacity and better heat dissipation.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-03-13
- Publication Date
- 2026-03-27
AI Technical Summary
Existing IGBT modules are unable to withstand large currents and have poor heat dissipation.
It adopts a hybrid chip structure, including IGBT chips, MOSFET chips and diode chips, which are connected in parallel. The CLIP structure, made of copper strip bending parts, is soldered with solder paste to form a parallel circuit, and is electrically connected through conductive sheets and output terminals.
It achieves greater current carrying capacity and better heat dissipation performance, enhances welding stability, and prevents IGBT module overheating.
Smart Images
Figure CN224054693U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to the field of semiconductor, especially IGBT module with high current bearing capacity. BACKGROUND
[0002] IGBT (Insulated Gate Bipolar Transistor), insulated gate bipolar transistor, is by (Bipolar Junction Transistor, BJT) bipolar triode and insulated gate type field effect transistor (Metal Oxide Semiconductor, MOS) the compound full control type voltage drive type power semiconductor device, has (Metal-Oxide-Semiconductor Field-Effect Transistor, MOSFET) high input impedance and power transistor (Giant Transistor, GTR) two aspects of advantages of low on-voltage of gold and oxygen half field effect transistor.
[0003] The existing IGBT module generally includes a plurality of IGBT subunits, each IGBT subunit includes an IGBT chip and a diode chip, the packaging structure of the IGBT module generally includes a heat dissipation base plate, a conductive sheet laid on the heat dissipation base plate, an IGBT chip and a diode chip welded on the conductive sheet, and an electrical connector electrically connected between the IGBT chip, the diode chip and the conductive sheet, however, due to the characteristics of the IGBT chip, it is difficult to withstand a large current, so a new IGBT structure is needed to solve the above problems. SUMMARY
[0004] The utility model aims at providing a kind of big current power semiconductor module with hybrid chip structure, and the heat dissipation effect is good, and can withstand greater current.
[0005] In order to achieve the above object, the utility model provides a kind of big current power semiconductor module with hybrid chip structure, including one or more chip groups, heat dissipation plate, conductive sheet laid on the heat dissipation plate, CLIP structure and output terminal, the chip group is welded on the conductive sheet, and each the chip group includes IGBT chip, MOSFET chip and diode chip, the CLIP structure is copper strip bending piece and includes at least two welding parts welded on the electrode of chip group, conductive sheet, output terminal at least two, and the connecting portion of at least two welding parts, to make the CLIP structure electric connection the electrode of chip group, conductive sheet and output terminal, and the IGBT chip, MOSFET chip in each group of chip group are connected in parallel.
[0006] Preferably, the output terminal includes a first power terminal, a second power terminal, a first signal terminal and a second signal terminal corresponding to the chip group, the CLIP structure electrically connects the E terminal of the IGBT chip, the positive terminal of the diode chip and the S terminal of the MOSFET chip in each group of chip group to the corresponding first power terminal, electrically connects the C terminal of the IGBT chip, the negative terminal of the diode chip and the D terminal of the MOSFET chip in each group of chip group to the corresponding second power terminal, electrically connects the G terminal of the IGBT chip in each group of chip group to the corresponding first signal terminal, and electrically connects the G terminal of each group of MOSFET chip to the corresponding second signal terminal.
[0007] Specifically, the conductive sheet includes a conductive unit corresponding to the chip set, the conductive unit includes a first conductive sheet, a second conductive sheet, a third conductive sheet and a fourth conductive sheet arranged in sequence along a first direction, the C pole of the IGBT chip, the negative pole of the diode chip and the D pole of the MOSFET chip are welded on the second conductive sheet, and the IGBT chip and the diode chip are arranged along the first direction, the MOSFET chip is located on one side of the IGBT chip or the diode chip along a second direction, the first direction is perpendicular to the second direction, the G pole and the E pole of the IGBT chip are arranged along the second direction; the CLIP structure includes a first CLIP piece, a second CLIP piece, a third CLIP piece and a fourth CLIP piece, the first CLIP piece is electrically connected with the E pole of the IGBT chip, the positive pole of the diode chip and the third conductive sheet along the first direction, the second CLIP piece is electrically connected with the G pole of the IGBT chip and the fourth conductive sheet along the first direction, the third CLIP piece is electrically connected with the D pole of the MOSFET chip and the third conductive sheet along the first direction, and the fourth CLIP piece is electrically connected with the G pole of the MOSFET chip and the first conductive sheet along the third direction.
[0008] More specifically, the chipsets have two groups and are respectively a first chipset and a second chipset, the conductive units have two and are respectively a first conductive unit and a second conductive unit, the first conductive unit and the second conductive unit are arranged side by side along a second direction, the first power terminal corresponding to the first chipset and the second power terminal corresponding to the second chipset are arranged on a side of the first conductive unit away from the second conductive unit along a first direction, the second power terminal corresponding to the first chipset and the first power terminal corresponding to the second chipset are arranged on a side of the second conductive unit away from the first conductive unit along the first direction; the CLIP structure further comprises a fifth CLIP piece, a sixth CLIP piece, a seventh CLIP piece, an eighth CLIP piece, a first bridging CLIP piece and a second bridging CLIP piece, the first to fourth conductive sheets of the first conductive unit and the first to fourth conductive sheets of the second conductive unit are arranged in the first direction along opposite directions in sequence, and the second conductive unit further comprises a fifth conductive sheet located on a side of the first conductive sheet away from the third conductive sheet; the fifth CLIP piece electrically connects the second conductive sheet of the first conductive unit and the first power terminal corresponding to the first chipset, the first bridging CLIP piece electrically connects the third conductive sheet of the first conductive unit and the second conductive sheet of the second conductive unit together, the sixth CLIP piece electrically connects the second conductive sheet 32b and the second power terminal corresponding to the first chipset, the seventh CLIP piece electrically connects the second conductive sheet of the second conductive unit and the first power terminal corresponding to the second chipset, the second bridging CLIP piece electrically connects the third conductive sheet of the second conductive unit and the fifth conductive sheet of the second conductive unit, and the eighth CLIP piece electrically connects the fifth conductive sheet of the first conductive unit and the second power terminal corresponding to the second chipset.
[0009] More specifically, the lower welding portion of the second power terminal and the first conductive sheet of the first conductive unit are misaligned in the second direction, and the eighth CLIP piece comprises a first welding portion welded to the first conductive sheet of the first conductive unit, a support portion formed by bending and extending upward from one end of the first welding portion in the first direction, a connecting portion formed by extending from the end of the support portion in the direction of the lower welding portion of the second power terminal in the second direction, and a second welding portion formed by extending from the connecting portion in the direction of the lower welding portion of the second power terminal in the first direction and welded to the lower welding portion.
[0010] Preferably, the fifth CLIP piece, the sixth CLIP piece, the seventh CLIP piece and the eighth CLIP piece are provided with a through welding groove on the welding portion welded to the first power terminal and the second power terminal.
[0011] Preferably, the CLIP structure further comprises a communication CLIP piece electrically connecting the conductive sheet and the first or second signal terminal, the communication CLIP piece comprising a third soldering part soldered on the conductive sheet, a fourth soldering part soldered on a lower soldering part of the first or second signal terminal, and a long strip-shaped connecting bridge connecting the third soldering part and the fourth soldering part, the connecting bridge expanding outward in the middle in the transverse direction to form a grabbing boss, facilitating the grabbing of the CLIP piece by a chuck robot during soldering.
[0012] Preferably, the conductive sheet further comprises a detection conductive sheet mounting a thermistor, the output terminal comprises a detection terminal outputting an electrical signal across the thermistor, and the CLIP structure comprises a detection CLIP piece electrically connecting the electrical signal of the detection conductive sheet to a lower soldering part of the detection terminal.
[0013] Preferably, each of the chip groups comprises two IGBT chips, one MOSFET chip and two diode chips, one of the IGBT chips and one of the diode chips being arranged on one side of the MOSFET chip in a first direction, the other of the IGBT chips and the other of the diode chips being arranged on the other side of the MOSFET chip in the first direction, the first direction being perpendicular to the second direction, so that the two IGBT chips are far away from each other, preventing the IGBT module from overheating.
[0014] Preferably, the CLIP structure is provided with one or more through soldering grooves on at least part of the soldering parts soldered with the electrodes of the chip groups, and the solder paste is partially filled into the soldering grooves to enhance the stability of the soldering parts.
[0015] Compared with the prior art, the series of the large-current power semiconductor module IGBT chips and MOSFET chips in parallel can bear greater current. Furthermore, the CLIP structure made of the copper bending piece is used as the electrical connecting piece, and the solder paste is used to solder the various elements together, so that the CLIP structure can bear stronger stress and higher current and has better heat dissipation performance. BRIEF DESCRIPTION OF DRAWINGS
[0016] Figure 1 is a perspective view of the large-current power semiconductor module.
[0017] Figure 2 is an internal structure diagram of the large-current power semiconductor module after the shell is opened.
[0018] Figure 3 is a partially exploded view of the large-current power semiconductor module.
[0019] Figure 4It is the circuit diagram of the large current power semiconductor module of the utility model. DETAILED DESCRIPTION
[0020] In order to explain the technical content, construction features, purposes and effects of the utility model in detail, the following will be described in detail in combination with embodiments and the accompanying drawings.
[0021] Reference Figures 1 to 3 The utility model discloses a kind of large current power semiconductor modules with hybrid chip structure, including shell 10, one or more chip groups installed in the shell 10, heat sink 14, conductive sheet laid on the heat sink 14, CLIP structure, and output terminal installed on the shell 10.
[0022] Reference Figure 1 Shell 10 includes bottom plate 11, outer frame 12 installed on the bottom plate 11 and cover plate 13 covered on the upper side of outer frame 12 to close the internal components thereof. Output terminal is clamped in outer frame 12. Output terminal includes signal terminal and power terminal.
[0023] Reference Figure 2 It is the structural diagram after removing outer frame 12 and cover plate 13.
[0024] Reference Figure 2 The chip group is welded on the conductive sheet, and each chip group includes IGBT chip 51, MOSFET chip 52 and diode chip 53, the CLIP structure is copper strip bending piece, and includes at least two welding portions 201 welded on the electrode of chip group, conductive sheet, output terminal at least two of them, and connecting portion 202 connecting two welding portions 201, so that CLIP structure is electrically connected to the electrode of IGBT chip 51, MOSFET chip 52 and diode chip 53, conductive sheet and output terminal, and the IGBT chip 51, MOSFET chip 52 are connected in parallel, and diode chip 53 is connected in parallel with the main circuit of IGBT chip 51 and MOSFET chip 52 to form a freewheeling circuit.
[0025] Reference Figure 2 And Figure 3 At least part of the welding groove 203 is formed on the welding portion 201, and the tin paste is partially filled into the welding groove 203 to enhance the stability of the welding portion 201. Specifically, the welding groove 203 is formed on the welding portion 203 welded with the E pole of IGBT chip 51, the S pole of MOSFET chip 52 and the positive pole of diode chip 52 of CLIP structure, and the welding groove 203 is formed on the welding portion 203 welded with power terminal of CLIP structure.
[0026] Reference Figure 3In the embodiment, the chip group has two groups, and each group is a first group chip group and a second group chip group. Each chip group includes two IGBT chips 51, one MOSFET chip 52, and two diode chips 53. One of the IGBT chips and one of the diode chips 53 are arranged on one side of the MOSFET chip 52 along a first direction, and the other IGBT chip and the other diode chip 53 are arranged on the other side of the MOSFET chip 52 along the first direction. The first direction is perpendicular to the second direction, so that the two IGBT chips 51 are far apart to prevent the IGBT module from overheating.
[0027] Of course, each group of chips can also include only one IGBT chip 51, one MOSFET chip 52, and one diode chip 53. Or each group of chips can also include multiple IGBT chips 51, one or more MOSFET chips 52, and multiple diode chips 53. The number of IGBT chips 51 and diode chips 53 is equal and one-to-one corresponding connection.
[0028] Reference Figure 2 and Figure 3 The output terminal includes a first power terminal 21a and a second power terminal 22a corresponding to the first group of chip groups, a first power terminal 21b and a second power terminal 22b corresponding to the second group of chip groups, a first signal terminal 26a and a second signal terminal 27a corresponding to the first group of chip groups, and a first signal terminal 26b and a second signal terminal 27b corresponding to the second group of chip groups.
[0029] Reference Figure 2 , Figure 3 and Figure 4 The CLIP structure electrically connects the E pole of the IGBT chip 51, the positive pole of the diode chip 53, and the S pole of the MOSFET chip 52 in the first group of chip groups to the corresponding first power terminal 21a, electrically connects the E pole of the IGBT chip 51, the positive pole of the diode chip 53, and the S pole of the MOSFET chip 52 in the second group of chip groups to the corresponding first power terminal 21b, electrically connects the C pole of the IGBT chip 51, the negative pole of the diode chip 53, and the D pole of the MOSFET chip 52 in the first chip group to the corresponding second power terminal 22a, and electrically connects the C pole of the IGBT chip 51, the negative pole of the diode chip 53, and the D pole of the MOSFET chip 52 in the second chip group to the corresponding second power terminal 22b. The second power terminal 22a of the first group of chip groups and the first power terminal 21b of the second group of chip groups are electrically connected.
[0030] The CLIP structure electrically connects the G poles of the IGBT chips 51 in the first chip group to the corresponding first signal terminals 26a, electrically connects the G poles of the MOSFET chips 52 in the first chip group to the corresponding second signal terminals 27a, electrically connects the G poles of the IGBT chips 51 in the second chip group to the corresponding first signal terminals 26b, and electrically connects the G poles of the MOSFET chips 52 in the second chip group to the corresponding second signal terminals 27b.
[0031] Referring to Figure 2 and Figure 3 The conductive sheet includes a first conductive unit corresponding to the first chip group and a second conductive unit corresponding to the second chip group. The first conductive unit includes a first conductive sheet 31a, a second conductive sheet 32a, and a third conductive sheet 33a arranged in sequence along a first direction. The second conductive sheet 32a has a notch accommodating a fifth conductive sheet 35a on a side adjacent to the first conductive sheet 31a. The fifth conductive sheet 34a is accommodated in the notch and located between the first conductive sheet 31a and the second conductive sheet 32a. The second conductive unit includes a first conductive sheet 31b, a second conductive sheet 32b, a third conductive sheet 33b, and a fourth conductive sheet 34b arranged in sequence along the first direction. The first conductive sheet 31b has a fifth conductive sheet 35b on a side away from the second conductive sheet 32b. The arrangement direction of the first conductive sheet 31a, the second conductive sheet 32a, and the third conductive sheet 33a is opposite to the arrangement direction of the first conductive sheet 31b, the second conductive sheet 32b, and the third conductive sheet 33b. For example, the arrangement direction of the first conductive sheet 31a, the second conductive sheet 32a, and the third conductive sheet 33a is from left to right, and the arrangement direction of the first conductive sheet 31b, the second conductive sheet 32b, and the third conductive sheet 33b is from right to left.
[0032] Referring to Figure 2 and Figure 3 In the two chip groups, the C poles of the IGBT chips 51, the negative poles of the diode chips 53, and the D poles of the MOSFET chips 52 are welded to the second conductive sheet 32a. The IGBT chips 51 and the diode chips 53 are arranged along a first direction, and the MOSFET chips 52 are located on a side of the IGBT chips 51 or the diode chips 53 along a second direction. The first direction is perpendicular to the second direction. The G poles and the E poles of the IGBT chips 51 are arranged along the second direction, and the G poles of the MOSFET chips 52 are adjacent to the first conductive sheet 31a relative to the D poles of the MOSFET chips 52.
[0033] The CLIP structure includes a first CLIP piece 41, a second CLIP piece 42, a third CLIP piece 43, and a fourth CLIP piece 44.
[0034] In the first conductive unit, the first CLIP piece 41 electrically connects the E pole of the IGBT chip 51, the positive pole of the diode chip 53, and the third conductive piece 33a in the first direction in order. In the second conductive unit, the first CLIP piece 41 electrically connects the E pole of the IGBT chip 51, the positive pole of the diode chip 53, and the third conductive piece 33b in the first direction in order.
[0035] In the first conductive unit, the second CLIP piece 42 electrically connects the G pole of the IGBT chip 51 and the fourth conductive piece 34a in the first direction. In the second conductive unit, the second CLIP piece 42 electrically connects the G pole of the IGBT chip 51 and the fourth conductive piece 34b in the first direction.
[0036] In the first conductive unit, the third CLIP piece 43 electrically connects the D pole of the MOSFET chip 52 and the third conductive piece 33a in the first direction. In the second conductive unit, the third CLIP piece 43 electrically connects the D pole of the MOSFET chip 52 and the third conductive piece 33b in the first direction.
[0037] In the first conductive unit, the fourth CLIP piece 44 electrically connects the G pole of the MOSFET chip 52 and the first conductive piece 31a in the third direction. In the second conductive unit, the fourth CLIP piece 44 electrically connects the G pole of the MOSFET chip 52 and the first conductive piece 31b in the third direction.
[0038] Reference Figure 2 The first conductive unit and the second conductive unit are arranged side by side in the first direction, the first power terminal 21 corresponding to the first chip group and the second power terminal 22 corresponding to the second chip group are arranged on the side of the first conductive unit away from the second conductive unit in the first direction, and the second power terminal 22a corresponding to the first chip group and the first power terminal 21b corresponding to the second chip group are arranged on the side of the second conductive unit away from the first conductive unit in the first direction.
[0039] The CLIP structure further comprises a fifth CLIP piece 61, a sixth CLIP piece 62, a seventh CLIP piece 63, an eighth CLIP piece 64, a first bridging CLIP piece, and a second bridging CLIP piece.
[0040] The fifth CLIP piece 61 electrically connects the second conductive piece 32a of the first conductive unit and the first power terminal 21 corresponding to the first chip group.
[0041] The first bridging CLIP member electrically connects the third conductive sheet 33a of the first conductive unit and the second conductive sheet 32b of the second conductive unit together, and the sixth CLIP member 62 electrically connects the second conductive sheet 32b and the second power terminal 22a corresponding to the first chip set.
[0042] The seventh CLIP member 63 electrically connects the second conductive sheet 32a of the second conductive unit and the first power terminal 21b corresponding to the second chip set.
[0043] The second bridging CLIP member electrically connects the third conductive sheet 33b of the second conductive unit and the fifth conductive sheet 35a of the first conductive unit together. The eighth CLIP member 64 electrically connects the fifth conductive sheet 35a and the second power terminal 22 corresponding to the second chip set.
[0044] Reference Figure 2 The CLIP structure further comprises a bridging copper sheet bridging between the second conductive sheet 31a of the first conductive unit and the fifth conductive sheet 35b of the second conductive unit, and the output terminal further comprises a signal terminal 25 electrically connected to the C pole of the IGBT chip 51 of the first chip set, and the CLIP structure comprises a signal CLIP member electrically connecting the fifth conductive sheet 35b and the signal terminal 25.
[0045] Reference Figure 2 The lower soldering portion of the second power terminal 22 and the first conductive sheet 31a of the first conductive unit are misaligned in the second direction, and the eighth CLIP member 64 comprises a first soldering portion soldered to the first conductive sheet 31a of the first conductive unit, a support portion extending upward from one end of the first soldering portion in the first direction, a connecting portion extending from the end of the support portion in the direction of the lower soldering portion of the second power terminal 22 in the second direction, and a second soldering portion extending from the connecting portion in the direction of the lower soldering portion of the second power terminal 22 in the first direction and soldered to the lower soldering portion.
[0046] Reference Figure 2 The fifth CLIP member 61, the sixth CLIP member 62, the seventh CLIP member 64 and the eighth CLIP member 64 are provided with a through soldering groove 203 on the soldering portion 201 soldered to the first power terminal 21a, 21b and the second power terminal 22a, 22b.
[0047] Reference Figure 2The CLIP structure further comprises a communication CLIP piece electrically connecting the conductive sheet and the first signal terminal 26 and the second signal terminal 27, the communication CLIP piece comprising a third welding part welded on the conductive sheet, a fourth welding part welded on a lower welding part of the first signal terminal 26 or the second signal terminal 27, and a long strip-shaped connecting bridge connecting the third welding part and the fourth welding part, the connecting bridge expanding outward in the middle in the transverse direction to form a grabbing boss 601, facilitating the grabbing of the CLIP piece by a chuck robot during welding.
[0048] With reference to Figure 2 The conductive sheet further comprises a detection conductive sheet 36 on which a thermistor is mounted, the output terminal comprises a detection terminal 28 outputting an electrical signal across the thermistor, and the CLIP structure comprises a detection CLIP piece 66 electrically connecting the electrical signal of the detection conductive sheet to a lower welding part 201 of the detection terminal 28.
[0049] In the embodiment, the heat dissipation plate and the conductive sheet form a DBC plate, and the conductive sheet is a copper-clad sheet.
[0050] The above only discloses preferred embodiments of the utility model, of course, cannot limit the utility model right scope with this, therefore the equivalent change made by the utility model application patent range, still belongs to the utility model covered range.
Claims
1. A high current power semiconductor module having a hybrid chip structure, characterized by: The application relates to a chip set, a heat sink, a conductive sheet laid on the heat sink, a CLIP structure and an output terminal, wherein the chip set is welded on the conductive sheet, each chip set comprises an IGBT chip, a MOSFET chip and a diode chip, the CLIP structure is a copper strip bending piece and comprises at least two welding parts welded on electrodes of the chip set, the conductive sheet and at least two output terminals, and a connecting part connecting the at least two welding parts, so that the CLIP structure electrically connects the electrodes of the chip set, the conductive sheet and the output terminal, and the IGBT chip, the MOSFET chip and the diode chip in each chip set are connected in parallel.
2. The high current power semiconductor module with hybrid chip structure according to claim 1, characterized in that: The output terminal comprises a first power terminal, a second power terminal, a first signal terminal and a second signal terminal corresponding to the chip set, the CLIP structure electrically connects the E pole of the IGBT chip, the positive pole of the diode chip and the S pole of the MOSFET chip in each chip set to the corresponding first power terminal, electrically connects the C pole of the IGBT chip, the negative pole of the diode chip and the D pole of the MOSFET chip in each chip set to the corresponding second power terminal, electrically connects the G pole of the IGBT chip in each chip set to the corresponding first signal terminal, and electrically connects the G pole of the MOSFET chip in each chip set to the corresponding second signal terminal.
3. The high current power semiconductor module with hybrid chip structure according to claim 2, characterized in that: The conductive sheet comprises a conductive unit corresponding to the chip set, the conductive unit comprises a first conductive sheet, a second conductive sheet, a third conductive sheet and a fourth conductive sheet arranged in sequence along a first direction, the C pole of the IGBT chip, the negative pole of the diode chip and the D pole of the MOSFET chip are welded on the second conductive sheet, the IGBT chip and the diode chip are arranged along a first direction, the MOSFET chip is located on one side of the IGBT chip or the diode chip along a second direction, the first direction is perpendicular to the second direction, the G pole and the E pole of the IGBT chip are arranged along the second direction. The CLIP structure comprises a first CLIP piece, a second CLIP piece, a third CLIP piece and a fourth CLIP piece, the first CLIP piece electrically connects the E pole of the IGBT chip, the positive pole of the diode chip and the third conductive sheet along the first direction, the second CLIP piece electrically connects the G pole of the IGBT chip and the fourth conductive sheet along the first direction, the third CLIP piece electrically connects the D pole of the MOSFET chip and the third conductive sheet along the first direction, and the fourth CLIP piece electrically connects the G pole of the MOSFET chip and the first conductive sheet along the third direction.
4. The high current power semiconductor module with hybrid chip structure according to claim 3, characterized in that: The chip set has two groups and is respectively a first chip set and a second chip set, the conductive unit has two and is respectively a first conductive unit and a second conductive unit, the first conductive unit and the second conductive unit are arranged side by side along a second direction, the first power terminal corresponding to the first chip set and the second power terminal corresponding to the second chip set are arranged on one side of the first conductive unit away from the second conductive unit along a first direction, and the second power terminal corresponding to the first chip set and the first power terminal corresponding to the second chip set are arranged on one side of the second conductive unit away from the first conductive unit along the first direction. The CLIP structure further comprises a fifth CLIP piece, a sixth CLIP piece, a seventh CLIP piece, an eighth CLIP piece, a first bridging CLIP piece and a second bridging CLIP piece, the first conductive sheet to the fourth conductive sheet of the first conductive unit and the first conductive sheet to the fourth conductive sheet of the second conductive unit are arranged in opposite directions along a first direction in sequence, and the second conductive unit further comprises a fifth conductive sheet located on one side of the first conductive sheet away from the third conductive sheet. The fifth CLIP piece electrically connects the second conductive sheet of the first conductive unit and the first power terminal corresponding to the first chip set, the first bridging CLIP piece electrically connects the third conductive sheet of the first conductive unit and the second conductive sheet of the second conductive unit together, the sixth CLIP piece electrically connects the second conductive sheet 32b and the second power terminal corresponding to the first chip set, the seventh CLIP piece electrically connects the second conductive sheet of the second conductive unit and the first power terminal corresponding to the second chip set, the second bridging CLIP piece electrically connects the third conductive sheet of the second conductive unit and the fifth conductive sheet of the second conductive unit, and the eighth CLIP piece electrically connects the fifth conductive sheet of the first conductive unit and the second power terminal corresponding to the second chip set.
5. The high current power semiconductor module with hybrid chip structure according to claim 4, characterized in that: The lower welding part of the second power terminal and the first conductive sheet of the first conductive unit are misaligned in a second direction, and the eighth CLIP piece comprises a first welding part welded to the first conductive sheet of the first conductive unit, a support part formed by bending and extending upward from one end of the first welding part in the first direction, a connecting part formed by extending from the end of the support part in the direction of the lower welding part of the second power terminal in the second direction, and a second welding part formed by extending from the connecting part in the direction of the lower welding part of the second power terminal in the first direction and welded to the lower welding part.
6. The high current power semiconductor module with hybrid chip structure according to claim 4, characterized in that: The fifth CLIP piece, the sixth CLIP piece, the seventh CLIP piece and the eighth CLIP piece are provided with a through welding groove on the welding part welded to the first power terminal and the second power terminal.
7. The high current power semiconductor module with hybrid chip structure according to claim 2, characterized in that: The CLIP structure further comprises a communication CLIP piece electrically connecting the conductive sheet and the first and second signal terminals, the communication CLIP piece comprising a third soldering part soldered on the conductive sheet, a fourth soldering part soldered on a lower soldering part of the first or second signal terminal, and a long strip-shaped connecting bridge connecting the third and fourth soldering parts, the connecting bridge having a middle part expanding outward in a transverse direction to form a grabbing boss.
8. The high current power semiconductor module with hybrid chip structure according to claim 1, characterized in that: The conductive sheet further comprises a detection conductive sheet mounting a thermistor, the output terminal comprises a detection terminal outputting an electrical signal across the thermistor, and the CLIP structure comprises a detection CLIP piece electrically connecting the electrical signal of the detection conductive sheet to a lower soldering part of the detection terminal.
9. The high current power semiconductor module with hybrid chip structure according to claim 1, characterized in that: Each of the chip groups comprises two IGBT chips, one MOSFET chip and two diode chips, one of the IGBT chips and one of the diode chips being arranged along a first direction on one side of the MOSFET chip in a second direction, and the other of the IGBT chips and the other of the diode chips being arranged along the first direction on the other side of the MOSFET chip in the second direction, the first direction being perpendicular to the second direction.
10. The high current power semiconductor module with hybrid chip structure of claim 1, wherein: The CLIP structure is provided with one or more through soldering grooves on at least part of the soldering parts soldered with the electrode of the chip group, and the solder paste is partially filled into the soldering grooves.