N-type semiconductor double-sided texturing device

Abstract

The utility model discloses an N-type semiconductor double-sided texturing device which comprises a texturing groove, a first air cylinder is fixedly installed on the right side of the texturing groove, a bearing bracket extending to an inner cavity of the texturing groove is fixedly installed at the output end of the first air cylinder, a limiting groove is formed in the bearing bracket, an installation frame is placed in an inner cavity of the limiting groove, and a second air cylinder is fixedly installed on the right side of the texturing groove. A plurality of N-type semiconductors distributed at equal intervals are placed in an inner cavity of the mounting frame, and two rotatable shaft rods are arranged in an inner cavity of the texturing groove. According to the utility model, the mounting rack equipped with a plurality of N-type semiconductors is arranged in the inner cavity of the limiting groove on the bearing bracket, then the cylinder 1 retracts, so that the bearing bracket drives the mounting rack and the N-type semiconductors to sink into the texturing liquid in the texturing groove, then the driving assembly drives the two shaft levers to rotate in opposite directions, and the shaft levers drive the shifting plate to rotate; and the texturing liquid in the texturing groove is disturbed, so that generated bubbles are quickly discharged, and the texturing effect is ensured.

Description

TECHNICAL FIELD

[0001] The utility model belongs to N type semiconductor processing technical field, especially relate to a N type semiconductor double -sided texturing device. BACKGROUND

[0002] When no external voltage, free electrons and holes in the semiconductor random motion, almost no current flow. When the application of external voltage, free electrons in the N type semiconductor will move to the positive pole under the action of electric field force, form the current, this kind of conduction mode mainly relies on the movement of electrons, called electronic conduction.

[0003] N type semiconductor production battery process needs to make the process of texturing, the process of texturing will be directly placed in the N type semiconductor texturing groove, use chemical, corrosion method on the N type semiconductor texture treatment, in order to improve the double -sided texturing effect of N type semiconductor, we design a kind of N type semiconductor double -sided texturing device, adopts frame type structure one -time fixed multiple N type semiconductor and makes the middle have the gap, then adopts the disturbance structure to disturb the texturing liquid, avoid the gas produced by the contact of semiconductor and texturing liquid to influence the texturing effect, guarantee the texturing quality. CONTENT OF THE UTILITY MODEL

[0004] The utility model discloses a kind of N type semiconductor double -sided texturing device, with it is fixed to adopt frame type structure one -time multiple N type semiconductor, middle have the gap, then disturb the texturing liquid using disturbance structure, avoid the gas produced by the contact of semiconductor and texturing liquid to influence the texturing effect, guarantee the texturing quality, to solve above-mentioned background technical problem.

[0005] The utility model solves above-mentioned technical problem technical scheme as follows: a kind of N type semiconductor double -sided texturing device, it includes texturing groove, the right side of the texturing groove is fixedly installed with air cylinder one, the output end of the air cylinder one is fixedly installed with the bearing bracket extending to the inner chamber of texturing groove, the bearing bracket is equipped with the limiting slot, the inner chamber of the limiting slot is placed with mounting bracket, the inner chamber of the mounting bracket is placed with multiple N type semiconductors of equal interval distribution, the inner chamber of the texturing groove is provided with two rotatable shafts, the rear side of the inner chamber of the texturing groove is close to the shaft, the surface of the shaft is fixedly connected with the paddle, and driving assembly is provided between the two shafts and the texturing groove.

[0006] Preferably, the driving assembly includes a connecting plate fixedly connected to the right end of the shaft, the right end of the shaft penetrates to the right side of the texturing groove, one side of the connecting plate is fixedly connected with a sliding pin, the right side of the texturing groove is fixedly installed with air cylinder two, the output end of the air cylinder two is fixedly installed with a rectangular frame, and the two sliding pins are slidingly connected in the inner chamber of the rectangular frame.

[0007] Preferably, the right side of the graining tank is fixedly provided with two symmetrical slide rails one, the surface of the slide rail one is slidably connected with a slide sleeve one, and the right side of the slide sleeve one is fixedly connected with the rectangular frame.

[0008] Preferably, the right side of the graining tank is fixedly provided with two symmetrical slide rails two, the surface of the slide rail two is slidably connected with a slide sleeve two, and the top of the slide sleeve two is fixedly connected with the bearing bracket.

[0009] Preferably, the front side of the limiting groove inner cavity is attached with the mounting frame, and the side surface of the N-type semiconductor is in contact with the inner wall of the limiting groove.

[0010] Compared with the prior art, the utility model has the following beneficial effects:

[0011] 1. The utility model discloses a mounting frame is placed in the inner cavity of the limiting groove on the bearing bracket, then the cylinder one retracts, makes the bearing bracket drive the mounting frame and N-type semiconductor dive into the graining tank in the graining solution, then the drive assembly makes two shafts rotate to each other, and the shaft makes the shift plate rotate, and the graining solution in the graining tank is disturbed, so that the generated gas bubble is discharged quickly, and the graining effect is guaranteed, that is, the frame type structure is used to fix a plurality of N-type semiconductors at one time, and a gap is left in the middle, then the disturbance structure is used to disturb the graining liquid, the gas generated by the contact between the semiconductor and the graining solution is avoided to affect the graining effect, and the purpose that the graining quality is guaranteed is achieved.

[0012] 2. The utility model discloses the cooperation of slide rail two and slide sleeve two, the process that bearing bracket lifts and will drive slide sleeve two to slide on the surface of slide rail two, provides support and direction for the movement of bearing bracket, improves the stability when bearing bracket moves;

[0013] 3. The utility model discloses the cooperation of slide rail one and slide sleeve one, the process that rectangular frame moves will drive slide sleeve one to slide on the surface of slide rail one, provides support and direction for rectangular frame, improves the stability of rectangular frame movement. ACCURACY

[0014] The above and / or other aspects of the present utility model will become more apparent and more readily appreciated through consideration of the following detailed description, with reference to the accompanying drawings, which are merely schematic and are therefore not intended to limit the present utility model, wherein:

[0015] Fig. 1 It is a three-dimensional schematic diagram of one embodiment of the utility model;

[0016] Fig. 2 It is a three-dimensional split schematic diagram of one embodiment of the utility model;

[0017] Fig. 3 It is a three-dimensional split schematic diagram of the shift plate and the graining tank of one embodiment of the utility model.

[0018] In the drawings, the components represented by the respective reference numerals are listed as follows:

[0019] 1, grooving tank, 2, cylinder one, 3, bearing bracket, 4, limiting groove, 5, mounting frame, 6, N-type semiconductor, 7, shaft, 8, push plate, 9, drive assembly, 91, connecting plate, 92, slide pin, 93, cylinder two, 94, rectangular frame, 95, slide rail one, 96, slide sleeve one, 10, slide rail two, 11, slide sleeve two. DETAILED DESCRIPTION

[0020] In the following, the embodiments of the N-type semiconductor double-sided texturing device of the present application will be described with reference to the accompanying drawings.

[0021] Figs. 1-3 The N-type semiconductor double-sided texturing device of one embodiment of the present application is shown, which comprises a grooving tank 1, a cylinder one 2 is fixedly installed on the right side of the grooving tank 1, a bearing bracket 3 extending into the inner cavity of the grooving tank 1 is fixedly installed on the output end of the cylinder one 2, two symmetrical slide rails two 10 are fixedly connected on the right side of the grooving tank 1, a slide sleeve two 11 is slidingly connected on the surface of the slide rail two 10, the top of the slide sleeve two 11 is fixedly connected with the bearing bracket 3, through the cooperation of the slide rail two 10 and the slide sleeve two 11, the slide sleeve two 11 will slide on the surface of the slide rail two 10 in the lifting process of the bearing bracket 3, which provides support and guidance for the movement of the bearing bracket 3, improves the stability of the bearing bracket 3 when moving, a limiting groove 4 is formed on the bearing bracket 3, a mounting frame 5 is placed in the inner cavity of the limiting groove 4, a plurality of N-type semiconductors 6 are placed in the inner cavity of the mounting frame 5 at equal intervals, the front side of the inner cavity of the limiting groove 4 is in close contact with the mounting frame 5, the side surface of the N-type semiconductor 6 is in contact with the inner wall of the limiting groove 4, two rotatable shafts 7 are arranged in the inner cavity of the grooving tank 1, the shaft 7 is close to the rear side of the inner cavity of the grooving tank 1, a push plate 8 is fixedly connected on the surface of the shaft 7, a drive assembly 9 is arranged between the two shafts 7 and the grooving tank 1, the drive assembly 9 comprises a connecting plate 91 fixedly connected on the right end of the shaft 7, the right end of the shaft 7 penetrates to the right side of the grooving tank 1, a slide pin 92 is fixedly connected on one side of the connecting plate 91, a cylinder two 93 is fixedly installed on the right side of the grooving tank 1, a rectangular frame 94 is fixedly installed on the output end of the cylinder two 93, the two slide pins 92 are slidingly connected in the inner cavity of the rectangular frame 94, two symmetrical slide rails one 95 are fixedly installed on the right side of the grooving tank 1, a slide sleeve one 96 is slidingly connected on the surface of the slide rail one 95, the right side of the slide sleeve one 96 is fixedly connected with the rectangular frame 94, through the cooperation of the slide rail one 95 and the slide sleeve one 96, the slide sleeve one 96 will slide on the surface of the slide rail one 95 in the movement process of the rectangular frame 94, which provides support and guidance for the rectangular frame 94, improves the stability of the rectangular frame 94 when moving.

[0022] Working principle: the utility model for use, preloaded N type semiconductor 6 is installed in mounting frame 5, there is a gap between each N type semiconductor 6, mounting frame 5 is placed on the inner cavity of limiting groove 4 of bearing bracket 3, at this time N type semiconductor 6 also abuts on the inner wall of limiting groove 4, can limit mounting frame 5 and N type semiconductor 6 to move due to liquid flow, then cylinder one 2 drives bearing bracket 3 and mounting frame 5 to move downwards, so that mounting frame 5 is immersed in the etching solution of etching groove 1, at this time both sides of N type semiconductor 6 are contacted with the solution in etching groove 1 to realize etching, during the period, cylinder two 93 is elongated and drives rectangular frame 94 to move, so that sliding pin 92 slides in the inner cavity of rectangular frame 94, then sliding pin 92 drives connecting plate 91 to rotate, connecting plate 91 makes two shaft rods 7 rotate towards each other by a certain angle, cylinder two 93 can be quickly elongated and slowly retracted, which ensures the effect of liquid disturbance in etching groove 1, so that the gas bubbles generated on N type semiconductor 6 are quickly discharged, ensuring the etching effect of N type semiconductor 6, it should be noted that the speed of cylinder extension and retraction can be realized by flow control mode, which is prior art and will not be described here.

[0023] In summary: the N type semiconductor double-sided etching device, by mounting frame 5 loaded with multiple N type semiconductor 6 is placed in the inner cavity of limiting groove 4 of bearing bracket 3, then cylinder one 2 retracts, so that bearing bracket 3 drives mounting frame 5 and N type semiconductor 6 to immerse in the etching solution in etching groove 1, then drive assembly 9 makes two shaft rods 7 rotate towards each other, shaft rod 7 makes the rotation of the lever 8, and the etching solution in the etching groove 1 is disturbed, so that the generated gas bubbles are quickly discharged, ensuring the etching effect, that is, the frame structure is used to fix multiple N type semiconductors at a time, leaving a gap in the middle, then the disturbance structure is used to disturb the etching liquid, avoiding the influence of the gas generated by the contact of the semiconductor with the etching liquid on the etching effect, and ensuring the purpose of etching quality.

Claims

1. A double-sided N-type semiconductor texturing apparatus, characterized by, The application relates to a wafer etching tank, which comprises a wafer etching tank (1), a cylinder (2) fixedly installed on the right side of the wafer etching tank (1), a bearing bracket (3) fixedly installed on the output end of the cylinder (2) and extending into the inner cavity of the wafer etching tank (1), a limiting groove (4) formed in the bearing bracket (3), an installation rack (5) placed in the inner cavity of the limiting groove (4), a plurality of N-type semiconductors (6) equidistantly distributed in the inner cavity of the installation rack (5), two rotatable shafts (7) arranged in the inner cavity of the wafer etching tank (1), the shafts (7) being close to the rear side of the inner cavity of the wafer etching tank (1), a push plate (8) fixedly connected to the surface of the shaft (7), and a driving assembly (9) arranged between the shaft (7) and the wafer etching tank (1).

2. The apparatus for double-side texturing of N-type semiconductor according to claim 1, wherein, The driving assembly (9) comprises a connecting plate (91) fixedly connected to the right end of the shaft (7), the right end of the shaft (7) penetrating into the right side of the wafer etching tank (1), a slide pin (92) fixedly connected to one side of the connecting plate (91), a cylinder (93) fixedly installed on the right side of the wafer etching tank (1), a rectangular frame (94) fixedly installed on the output end of the cylinder (93), and the slide pin (92) being slidingly connected to the inner cavity of the rectangular frame (94).

3. The apparatus for double-side texturing of N-type semiconductor according to claim 2, wherein, The right side of the wafer etching tank (1) is fixedly connected with two symmetrical slide rails (95), the surface of the slide rail (95) is slidingly connected with a slide sleeve (96), and the right side of the slide sleeve (96) is fixedly connected with the rectangular frame (94).

4. The apparatus for double-side texturing of N-type semiconductor according to claim 3, wherein, The right side of the wafer etching tank (1) is fixedly connected with two symmetrical slide rails (95), the surface of the slide rail (95) is slidingly connected with a slide sleeve (96), and the right side of the slide sleeve (96) is fixedly connected with the rectangular frame (94).

5. The apparatus for double-side texturing of N-type semiconductor according to claim 4, wherein, The front side of the inner cavity of the limiting groove (4) is attached to the installation rack (5), and the side surface of the N-type semiconductor (6) is in contact with the inner wall of the limiting groove (4).

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