Strip-shaped spray head, air inlet device and substrate processing equipment
By designing strip nozzles and multi-nozzle air curtain systems, the problems of uneven film thickness and poor shape retention in atomic layer deposition equipment were solved, resulting in more uniform film deposition and higher product yield.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-04-15
- Publication Date
- 2026-03-27
AI Technical Summary
In existing technologies, spatial isolation atomic layer deposition equipment suffers from uneven distribution of precursor molecules on the wafer surface, leading to uneven film thickness and poor conformability, which affects product yield.
Design a strip-shaped nozzle with a gradually decreasing nozzle opening along its length and an adjustable nozzle spacing. Combine multiple parallel nozzles for the introduction of reactive and adsorbent gases, forming an air curtain to regulate the gas stream, counteract turbulence, and improve gas distribution uniformity.
By improving the uniformity of the reaction gas distribution, the film thickness uniformity and conformability of the thin film deposition were improved, thereby increasing the product yield.
Smart Images
Figure CN224054745U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The application belongs to the technical field of semiconductor manufacturing equipment, and particularly relates to a strip-shaped nozzle, a gas inlet device and a substrate processing equipment. BACKGROUND
[0002] The substrate processing equipment includes a thin film deposition equipment, a photolithography equipment, an etching equipment, a cleaning equipment, an annealing equipment, a doping treatment equipment and the like. For the thin film deposition equipment such as a spatial isolation type atomic layer deposition, due to the structure of a precursor input device and the position of a vacuum pump, the number of precursor molecules saturatedly adsorbed on a wafer surface is unevenly distributed, thereby causing the thickness of a thin film formed on the wafer to be uneven, and the thickness uniformity and conformality of the thin film deposited on a semiconductor structure with a high aspect ratio hole / slot are poor, which reduces the yield of products. CONTENT OF THE UTILITY MODEL
[0003] The application aims to provide a strip-shaped nozzle, a gas inlet device and a substrate processing equipment to improve the film forming uniformity and conformality in a thin film deposition process and improve the yield of products.
[0004] In order to achieve the above-mentioned purpose, the application provides a strip-shaped nozzle, one side of the strip-shaped nozzle is provided with a plurality of nozzles, the plurality of nozzles are arranged at intervals along the length direction of the strip-shaped nozzle, and the opening size of the nozzles gradually decreases from the first end to the second end of the length direction of the strip-shaped nozzle.
[0005] Optionally, the nozzles are circular holes, and the diameter of the nozzles gradually decreases from the first end to the second end of the length direction of the strip-shaped nozzle.
[0006] Optionally, the spacing between adjacent nozzles gradually decreases from the first end to the second end of the length direction of the strip-shaped nozzle.
[0007] The application further provides a gas inlet device, the gas inlet device comprises a plurality of strip-shaped nozzles arranged side by side, the first ends of the plurality of strip-shaped nozzles are located on the same side, the plurality of strip-shaped nozzles comprise a first strip-shaped nozzle and a second strip-shaped nozzle, the second strip-shaped nozzle is arranged on one side of the first strip-shaped nozzle in the width direction, the first strip-shaped nozzle is used for introducing a reaction gas, the second strip-shaped nozzle is used for introducing an adsorption improvement gas or a purge gas, and the adsorption improvement gas is used for improving the saturated adsorption rate of the reaction gas.
[0008] Optionally, the plurality of strip-shaped nozzles further comprise a third strip-shaped nozzle, the second strip-shaped nozzle and the third strip-shaped nozzle are arranged on two sides of the first strip-shaped nozzle in the width direction respectively, and the third strip-shaped nozzle is used for introducing the adsorption improvement gas or the purge gas.
[0009] Optionally, the second strip-shaped nozzle and the third strip-shaped nozzle spray gas to form a gas curtain, and a shape of the gas curtain is adjustable.
[0010] Optionally, the gas inlet device further comprises a gas storage tank and a pressure regulating valve, the second strip-shaped nozzle is connected to the gas storage tank through one of the pressure regulating valves, the third strip-shaped nozzle is connected to the gas storage tank through another of the pressure regulating valves, the second strip-shaped nozzle and the third strip-shaped nozzle are connected to the same or different gas storage tanks, and the pressure regulating valves are used to at least adjust the shape of the gas curtain.
[0011] Optionally, the first strip-shaped nozzle sprays gas to form a reaction gas beam, and a beam width of the reaction gas beam in a width direction of the first strip-shaped nozzle is adjustable by adjusting the shape of the gas curtain formed by the second strip-shaped nozzle and the third strip-shaped nozzle.
[0012] Optionally, the second strip-shaped nozzle and the third strip-shaped nozzle spray gas to form a gas curtain, and a position of the gas curtain in a width direction of the strip-shaped nozzle is adjustable.
[0013] Optionally, distances between the second strip-shaped nozzle, the third strip-shaped nozzle and the first strip-shaped nozzle in the width direction of the first strip-shaped nozzle are adjustable; and / or
[0014] An angle of gas spraying of the nozzles of the second strip-shaped nozzle and the third strip-shaped nozzle is adjustable.
[0015] The application further provides a substrate processing device based on spatially isolated atomic layer deposition, comprising:
[0016] a base, wherein a plurality of substrate pedestals for carrying substrates to be processed are arranged on the base;
[0017] a plurality of gas inlet devices arranged above the base, wherein each of the gas inlet devices is used to provide a corresponding reaction gas beam, and each of the gas inlet devices is located in a corresponding isolated space of a reaction chamber.
[0018] The strip-shaped nozzle, the gas inlet device and the substrate processing device disclosed in the application have the following beneficial effects:
[0019] In the application, a plurality of nozzles are arranged on one side of the strip-shaped nozzle, the plurality of nozzles are arranged at intervals along a length direction of the strip-shaped nozzle, the opening size of the nozzles gradually decreases from a first end to a second end of the length direction of the strip-shaped nozzle, the flow rate of the reaction gas sprayed by the nozzles gradually increases, and the concentration of the gas beam formed by the gas sprayed by the nozzles gradually increases, which offsets the difference in the dispersion degree of the reaction gas beam caused by the disturbance, and compared with the scheme in which the diameters of all the nozzles are the same, the uniformity of the distribution of the reaction gas adsorbed on the surface of the wafer is improved.
[0020] The strip-shaped nozzles are applied to the gas inlet device, a plurality of strip-shaped nozzles are arranged side by side, the first ends of the plurality of strip-shaped nozzles are located at the same side, the middle strip-shaped nozzle is connected to the reaction gas, and the strip-shaped nozzles at the two sides are connected to the adsorption improvement gas or the purge gas, so that the reaction gas beam is formed as a vertical gas flow perpendicular to the wafer direction, the reaction gas beam is reduced in outward diffusion, the directionality of the reaction gas beam is improved, the amount of gas molecules contacted per unit area of the wafer surface is increased, the saturation chemical adsorption efficiency is improved, and the uniformity of the reaction gas flow distribution on the wafer surface is improved, so that the film thickness uniformity and the conformality of the thin film deposition process are improved.
[0021] The gas inlet device is applied to a substrate processing equipment based on spatial isolation atomic layer deposition, the gas inlet device is arranged in the isolation space of the reaction chamber to provide a corresponding reaction gas beam, and the first end of the strip-shaped nozzle is arranged to be closer to the center of the susceptor than the second end. From the area close to the center of the susceptor to the area far from the center of the susceptor on the surface of the substrate pedestal, the concentration of the reaction gas beam formed by the reaction gas sprayed by the nozzle gradually increases, and the flow rate of the reaction gas sprayed by the nozzle gradually increases. The difference in dispersion degree of the reaction gas beam caused by the disturbance is offset, so that the flow field distribution of the reaction gas on the wafer surface is more uniform, thereby improving the film thickness uniformity and the conformality in the atomic layer deposition thin film process, and improving the yield of products.
[0022] Other characteristics and advantages of the present application will become apparent from the following detailed description, or can be learned by practice of the present application.
[0023] It should be understood that the foregoing general description and the following detailed description are only exemplary and explanatory, and are not limiting to the present disclosure. BRIEF DESCRIPTION OF DRAWINGS
[0024] The drawings herein are incorporated into the specification and constitute a part of the specification, show embodiments consistent with the present application, and together with the specification serve to explain the principles of the present application. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor on the basis of these drawings.
[0025] Figure 1 is a schematic diagram of a strip-shaped nozzle applied to a substrate processing equipment in an embodiment of the present application.
[0026] Figure 2 is a structural schematic diagram of a strip-shaped nozzle with equal spacing between nozzles in an embodiment of the present application.
[0027] Figure 3 is a structural schematic diagram of a strip-shaped nozzle with gradually decreasing spacing between nozzles in an embodiment of the present application.
[0028] Figure 4 FIG. 1 is a schematic diagram of reaction gas spraying to the surface of a wafer in some embodiments of the present application.
[0029] Figure 5 FIG. 2 is a schematic diagram of the structure of a bar-shaped showerhead in some embodiments of the present application.
[0030] Figure 6 FIG. 3 is a schematic diagram of multiple bar-shaped showerheads arranged side by side in embodiments of the present application.
[0031] Figure 7 FIG. 4 is a schematic diagram of the comparison of reaction gas concentration in the width direction of a bar-shaped showerhead in two schemes.
[0032] Figure 8 FIG. 5 is a schematic diagram of the comparison of the thickness uniformity of a deposited film layer of a bar-shaped showerhead in two schemes.
[0033] Figure 9 FIG. 6 is a schematic diagram of the step coverage of sprayed reaction gas in the first scheme in embodiments of the present application.
[0034] Figure 10 FIG. 7 is a schematic diagram of the comparison of the conformality of a formed film layer in two schemes.
[0035] Explanation of Reference Signs:
[0036] 100, gas inlet device; 110, bar-shaped showerhead; 110a, first bar-shaped showerhead; 110b, second bar-shaped showerhead; 110c, third bar-shaped showerhead; 111, nozzle; 120a, first gas tank; 120b, second gas tank; 120c, third gas tank; 130, pressure regulating valve;
[0037] 200, substrate pedestal; 20, wafer. DETAILED DESCRIPTION
[0038] Example implementations will now be described more fully with reference to the accompanying drawings. Example implementations may, however, be implemented in many different forms and should not be construed as limited to the examples set forth herein; rather, these implementations are provided so that this disclosure will be thorough and complete, and will fully convey the scope of example implementations to those skilled in the art.
[0039] Furthermore, described features, structures, or characteristics can be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided to give a thorough understanding of embodiments of the application. One skilled in the relevant art will recognize, however, that the
[0040] The application will be further described below in conjunction with the accompanying drawings and specific embodiments. It is to be noted that the technical features involved in the various embodiments of the application described below can be combined with each other as long as there is no conflict. The embodiments described below by reference to the accompanying drawings are exemplary and are intended to explain the application, but cannot be understood as limiting the application.
[0041] The embodiment provides a strip-shaped shower head 110 applied to the gas inlet device 100. Referring to FIG. 1, the strip-shaped shower head 110 is arranged on one side of the gas inlet device 100. Figure 1 and Figure 2 As shown in FIG. 1, a plurality of nozzles 111 are arranged on one side of the strip-shaped shower head 110, and the plurality of nozzles 111 are arranged at intervals along the length direction of the strip-shaped shower head 110. In the width direction of the strip-shaped shower head 110, the plurality of nozzles 111 are arranged centrally relative to the strip-shaped shower head 110. That is, the plurality of nozzles 111 are arranged in a row on the center line in the width direction of the strip-shaped shower head 110. From the first end to the second end of the length direction of the strip-shaped shower head 110, the opening size of the nozzles 111 gradually decreases. From the first end to the second end of the length direction of the strip-shaped shower head 110, the flow rate of the reaction gas sprayed by the nozzles 111 gradually increases, and the concentration of the gas beam formed by the nozzles 111 gradually increases, that is, the distribution of the gas flow field on the surface of the substrate is more uniform.
[0042] The gas inlet device 100 can be applied to a substrate processing device of a thin film deposition type, which includes a susceptor provided with a plurality of substrate pedestals 200 for carrying substrates, and the strip-shaped shower head 110 is arranged on one side of the substrate pedestals 200 for spraying process gas to the surface of the substrate. The process gas includes a reaction gas and a purge gas, the reaction gas is used as a reaction source for depositing a film layer material on the surface of the substrate, and the purge gas is used for cleaning the surface of the substrate, removing unabsorbed reaction gas and reaction by-products, etc.
[0043] For example, the substrate is a wafer 20 for manufacturing chips, and the substrate processing device is used for atomic layer deposition of aluminum oxide (Al2O3) film on the surface of the wafer 20. When the aluminum oxide film is deposited by atomic layer deposition, a first reaction gas can be sprayed to the surface of the wafer 20 first, then a purge gas is used to purge the excess first reaction gas, a second reaction gas is sprayed to the surface of the wafer 20 to form an aluminum oxide film on the surface of the wafer 20, and then the purge gas is used to purge the excess second reaction gas and reaction by-products. The above process is repeated to complete the film deposition. The first reaction gas can be trimethylaluminum (TMA), the second reaction gas can be ozone (O3) or water vapor (H2O), and the purge gas can be nitrogen (N2) or other inert gas.
[0044] The gas inlet device 100 comprises at least one strip-shaped showerhead 110, which can be used for the inlet of any one of the first reaction gas, the second reaction gas and the purge gas. Specifically, in a substrate processing apparatus based on spatially separated atomic layer deposition, the reaction chamber is separated into a plurality of separated spaces, and one strip-shaped showerhead 110 is arranged in one separated space for the inlet of the reaction gas or the purge gas. In the substrate processing apparatus based on spatially separated atomic layer deposition, the strip-shaped showerhead 110 is generally fixed, and the substrate pedestal 200 can rotate relative to the center of the pedestal, and the substrate pedestal 200 can also rotate relative to the center thereof, so that the wafer 20 can rotate around the center of the pedestal. When the strip-shaped showerhead 110 is above the substrate pedestal 200, the orthogonal projection of the strip-shaped showerhead 110 on the substrate pedestal 200 has a center line in the length direction passing through the center of the pedestal, and the first end of the strip-shaped showerhead 110 is closer to the center of the pedestal than the second end. The center line of the nozzle 111 of the strip-shaped showerhead 110 is perpendicular to the wafer 20, and the nozzles 111 of the strip-shaped showerhead 110 all vertically spray gas to the surface of the wafer 20.
[0045] In some technical solutions, the plurality of nozzles 111 of the strip-shaped showerhead 110 of the gas inlet device 100 are all circular holes, and the diameters of all the nozzles 111 are the same, as shown in Figure 5 Due to the relative rotation of the strip-shaped showerhead 110 and the substrate pedestal 200, the gas sprayed by the strip-shaped showerhead 110 has a disturbance on the surface of the wafer 20, which causes the reaction gas beam formed by the gas sprayed by the strip-shaped showerhead 110 to be dispersed, as shown in Figure 4 Due to the fact that the vacuum pump is generally arranged at the edge of the pedestal, the degree of dispersion of the reaction gas beam is different from the area close to the center of the pedestal to the area far from the center of the pedestal on the surface of the substrate pedestal 200, which causes the reaction gas adsorbed on the surface of the wafer 20 to be unevenly distributed, and the area far from the center of the pedestal on the surface of the wafer 20 adsorbs more reaction gas, which causes the aluminum oxide film formed at the edge position of one side of the wafer 20 to be thicker.
[0046] In the embodiment, the strip-shaped shower head 110 is provided with a plurality of nozzles 111 on one side, and the plurality of nozzles 111 are arranged at intervals along the length direction of the strip-shaped shower head 110. From the first end to the second end of the length direction of the strip-shaped shower head 110, the opening size of the nozzles 111 gradually decreases, the flow rate of the reaction gas sprayed by the nozzles 111 gradually increases, and the concentration of the reaction gas beam formed by the reaction gas sprayed by the nozzles 111 gradually increases. When the strip-shaped shower head 110 is applied to the gas inlet device 100, and the gas inlet device 100 is applied to the substrate processing equipment for thin film deposition, the first end of the strip-shaped shower head 110 is closer to the center of the susceptor than the second end. From the area close to the center of the susceptor to the area far from the center of the susceptor on the surface of the substrate pedestal 200, the concentration of the reaction gas beam formed by the reaction gas sprayed by the nozzles 111 gradually increases, the flow rate of the reaction gas sprayed by the nozzles 111 gradually increases, and the difference in the dispersion degree of the reaction gas beam caused by the disturbance is offset. Compared with the scheme in which the diameters of all the nozzles 111 are the same, the uniformity of the distribution of the reaction gas adsorbed on the surface of the wafer 20 is improved, so that the film thickness uniformity of the deposited thin film is better, and the yield of the product is improved.
[0047] In some embodiments, the nozzles 111 are circular holes, and the diameters of the nozzles 111 gradually decrease from the first end to the second end of the length direction of the strip-shaped shower head 110.
[0048] It should be noted that the nozzles 111 can be circular holes, but are not limited thereto, and can also be elliptical holes, rectangular holes, or regular polygonal holes, etc., which can be determined as appropriate.
[0049] The nozzles 111 are circular holes, and the structures of the strip-shaped shower head 110 and the gas inlet device 100 are simpler, so that the manufacturing cost of the gas inlet device 100 can be reduced.
[0050] In some embodiments, the distances between the adjacent nozzles 111 are equal from the first end to the second end of the length direction of the strip-shaped shower head 110, as shown in FIG. 2A. Figure 2 Alternatively, the distances between the adjacent nozzles 111 gradually decrease from the first end to the second end of the length direction of the strip-shaped shower head 110, as shown in FIG. 2B. Figure 3 As shown in FIG. 2B, D1>D2, D2>D3, D3>D4, and D4>D5.
[0051] Since the diameters of the nozzles 111 gradually decrease from the first end to the second end of the length direction of the strip-shaped shower head 110, when the change in the diameter of the nozzles 111 is small, the flow rates of the inlets of different nozzles 111 are substantially the same, and when the change in the diameter of the nozzles 111 is large, the flow rates of the inlets of different nozzles 111 are different. Therefore, the distances between the adjacent nozzles 111 can be equal or gradually decreased according to the degree of decrease in the diameter of the nozzles 111, so as to compensate for the non-uniform distribution of the reaction gas caused by the different flow rates of the inlets of different nozzles 111.
[0052] This application also provides an air intake device 100, which includes a plurality of strip-shaped nozzles 110 arranged side by side, i.e., the center lines of the length direction of the plurality of strip-shaped nozzles 110 are parallel, the first ends of the plurality of strip-shaped nozzles 110 are located on the same side, and the nozzle 111 structures of the plurality of strip-shaped nozzles 110 are all identical. The plurality of strip-shaped nozzles 110 includes a first strip-shaped nozzle 110a and a second strip-shaped nozzle 110b, wherein the second strip-shaped nozzle 110b is disposed on one side of the first strip-shaped nozzle 110a in the width direction, such as... Figure 6 As shown. The first strip nozzle 110a is used to introduce the reaction gas, and the second strip nozzle 110b is used to introduce the adsorption and improvement gas or the purging gas.
[0053] An adsorption modifier gas is introduced before the adsorption reaction gas. This modifier gas promotes the formation of more active sites on the surface of wafer 20, thereby increasing the saturation adsorption rate of the reaction gas. For example, the reaction gas is trimethylaluminum, and the adsorption modifier gas is a hydroxyl-containing gas.
[0054] It should be noted that the air intake device 100 may include multiple strip nozzles 110 arranged side by side, but is not limited to this. The air intake device 100 may also be provided with only one strip nozzle 110 for injecting the reaction gas, depending on the specific situation.
[0055] In some embodiments, the plurality of strip nozzles 110 further includes a third strip nozzle 110c, wherein the second strip nozzle 110b and the third strip nozzle 110c are respectively disposed on both sides of the width direction of the first strip nozzle 110a, the second strip nozzle 110b is used to introduce adsorption improving gas or purge gas, and the third strip nozzle 110c is used to introduce adsorption improving gas or purge gas.
[0056] The air intake device 100 also includes multiple gas storage tanks, including a first gas storage tank 120a, a second gas storage tank 120b, and a third gas storage tank 120c. The first gas storage tank 120a is used to store the reaction gas, and the air inlet of the first strip nozzle 110a is connected to the first gas storage tank 120a. The gas pressure inside the first gas storage tank 120a is greater than the gas pressure in the reaction chamber, and the pressure difference between the first gas storage tank 120a and the reaction chamber is controlled between 50 mTorr and 400 Torr.
[0057] The second gas storage tank 120b is used to store the reactant gas or adsorb and improve the gas. The inlet of the second strip nozzle 110b is connected to the second gas storage tank 120b. The third gas storage tank 120c is used to store the reactant gas or adsorb and improve the gas. The inlet of the third strip nozzle 110c is connected to the third gas storage tank 120c. The gas pressure in the second gas storage tank 120b is greater than the gas pressure in the first gas storage tank 120a, and the pressure difference between the second gas storage tank 120b and the first gas storage tank 120a is controlled between 0 and 200 Torr. The gas pressure in the third gas storage tank 120c is greater than the gas pressure in the first gas storage tank 120a, and the pressure difference between the third gas storage tank 120c and the first gas storage tank 120a is controlled between 0 and 200 Torr.
[0058] It should be noted that when both the second strip nozzle 110b and the third strip nozzle 110c are used to introduce purging gas, the second strip nozzle 110b and the third strip nozzle 110c can also be connected to the same gas storage tank.
[0059] When the air intake device 100 includes only the first strip nozzle 110a and all nozzles 111 have the same diameter (i.e., the first scheme), the reaction gas beam formed by the reaction gas introduced through the first strip nozzle 110a is not concentrated enough. Figure 4 As shown, the airflow reaching the surface of wafer 20 is dispersed, affecting the uniformity of the distribution of adsorbed reactive gases on the surface of wafer 20, and limiting the further improvement of the uniformity of the deposited film thickness.
[0060] A second strip nozzle 110b and a third strip nozzle 110c (i.e., the second scheme) are arranged on both sides of the first strip nozzle 110a. The purge gas ejected from the second strip nozzle 110b and the third strip nozzle 110c forms an air curtain that can act as a baffle, limiting the shape of the reactive gas beam formed by the reactive gas ejected from the first strip nozzle 110a, that is, increasing the concentration of the reactive gas ejected from the first strip nozzle 110a. Figure 7 As shown, compared with the first scheme, the concentration of the reactive gas ejected from the nozzle 111 of the first strip nozzle 110a of the air intake device 100 is significantly improved in the second scheme. For example... Figure 8 As shown, taking the diameter direction on the wafer 20 parallel to the centerline of the length direction of the first strip nozzle 110a when forming the aluminum oxide film as an example, the aluminum oxide film formed by the second scheme has significantly improved film thickness uniformity compared with the aluminum oxide film formed by the first scheme.
[0061] See Figure 9 As shown, in the first scheme, when the strip nozzle 110 of the air intake device 100 sprays the reactive gas onto the uneven surface of the wafer 20, the concentration of the reactive gas is low, the flow rate of the reactive gas is low, and the density of the reactive gas adsorbed on the bottom surface of the step and the density of the reactive gas adsorbed on the top surface of the step are different, that is, the step coverage of the reactive gas is uneven.
[0062] Referring to Figure 10 As shown in the figure, taking the surface step height ratio of wafer 20 as an example, the step coverage of the aluminum oxide film layer formed by the first scheme of gas inlet device 100 is 85% to 90%, and the step coverage of the aluminum oxide film layer formed by the second scheme of gas inlet device 100 is 95% to 98%, and the step coverage of the aluminum oxide film layer formed by the second scheme is significantly improved compared with the aluminum oxide film layer formed by the first scheme. The step coverage is the ratio of the film layer thickness THK BTM to the film layer thickness THK TOP .
[0063] In summary, the second strip-shaped nozzle 110b and the third strip-shaped nozzle 110c are arranged on both sides of the first strip-shaped nozzle 110a, and the gas curtains formed by the gas sprayed by the second strip-shaped nozzle 110b and the third strip-shaped nozzle 110c can be used as a barrier to limit the shape of the reaction gas beam formed by the reaction gas sprayed by the first strip-shaped nozzle 110a, thereby improving the concentration of the reaction gas sprayed by the first strip-shaped nozzle 110a, and further improving the uniformity and shape retention of the film layer.
[0064] In some embodiments, the gas curtains formed by the gas sprayed by the second strip-shaped nozzle 110b and the third strip-shaped nozzle 110c can be adjusted in shape. The reaction gas beam formed by the gas sprayed by the first strip-shaped nozzle 110a can be adjusted in beam width in the width direction of the first strip-shaped nozzle 110 by adjusting the shape of the gas curtains formed by the gas sprayed by the second strip-shaped nozzle 110b and the third strip-shaped nozzle 110c. By adjusting the shape of the gas curtain, the width of the reaction gas beam on the surface of the wafer 20 in the width direction of the strip-shaped nozzle 110 can be increased or decreased by 0.1mm to 2mm.
[0065] By adjusting the shape of the gas curtains formed by the gas sprayed by the second strip-shaped nozzle 110b and the third strip-shaped nozzle 110c, the beam width of the reaction gas beam sprayed by the first strip-shaped nozzle 110a is indirectly adjusted, and the saturation adsorption rate of the reaction gas on the wafer 20 can be adjusted, thereby controlling the thickness and uniformity of the film layer formed on the surface of the wafer 20.
[0066] In some embodiments, the gas inlet device 100 further comprises a pressure regulating valve 130, the second strip-shaped nozzle 110b is connected to the gas tank through one pressure regulating valve 130, and the third strip-shaped nozzle 110c is connected to the gas tank through another pressure regulating valve 130. The gas tanks connected to the second strip-shaped nozzle 110b and the third strip-shaped nozzle 110c are the same or different. The gas curtains formed by the gas sprayed by the second strip-shaped nozzle 110b and the third strip-shaped nozzle 110c, and the pressure regulating valve 130 is used at least to adjust the shape of the gas curtain.
[0067] The pressure regulating valve 130 can adjust the pressure of the gas inside the second and third linear nozzles 110b and 110c and the flow rate of the gas entering the nozzles 111, so as to adjust the shape of the gas curtain formed by the gas sprayed from the second and third linear nozzles 110b and 110c. It should be understood that the gas curtains formed by the gas sprayed from the second and third linear nozzles 110b and 110c can be different.
[0068] In some embodiments, the gas curtains formed by the gas sprayed from the second and third linear nozzles 110b and 110c can be adjusted in position in the width direction of the linear nozzles 110.
[0069] The position of the gas curtains formed by the gas sprayed from the second and third linear nozzles 110b and 110c can indirectly adjust the shape of the reaction gas beam formed by the reaction gas sprayed from the first linear nozzle 110a, so as to adjust the adsorption rate of the reaction gas on the wafer 20, thereby controlling the thickness and uniformity of the film layer formed on the surface of the wafer 20.
[0070] In some embodiments, the distance between the second and third linear nozzles 110b and 110c and the first linear nozzle 110a in the width direction of the first linear nozzle 110a can be adjusted.
[0071] It should be noted that the distance between the second and third linear nozzles 110b and 110c and the first linear nozzle 110a can indirectly adjust the shape of the reaction gas beam formed by the reaction gas sprayed from the first linear nozzle 110a, but is not limited thereto. The angle of the nozzles 111 of the second and third linear nozzles 110b and 110c can also be adjusted to indirectly adjust the shape of the reaction gas beam formed by the reaction gas sprayed from the first linear nozzle 110a, which can be determined according to the specific situation.
[0072] The present application also provides a substrate processing apparatus based on spatially isolated atomic layer deposition, which comprises the gas inlet device 100 disclosed above and a susceptor for carrying a substrate to be processed. The gas inlet device 100 is arranged above the susceptor, and a reaction chamber is formed between the gas inlet device 100 and the susceptor. The reaction chamber comprises a plurality of isolated spaces, and the linear nozzles 110 of each gas inlet device 100 are arranged in a corresponding isolated space of the reaction chamber. Each gas inlet device 100 is used to provide a corresponding reaction gas beam, that is, the gas inlet device 100 is used to at least introduce a reaction gas into the reaction chamber and spray the reaction gas to the surface of the substrate.
[0073] In the embodiment, the substrate processing device comprises a gas inlet device 100, the gas inlet device 100 comprises a strip-shaped shower head 110, a plurality of nozzles 111 are arranged on one side of the strip-shaped shower head 110, the plurality of nozzles 111 are arranged at intervals along the length direction of the strip-shaped shower head 110, the opening size of the nozzles 111 gradually decreases from the first end to the second end of the length direction of the strip-shaped shower head 110, the flow rate of the reaction gas sprayed by the nozzles 111 gradually increases, and the concentration degree of the reaction gas beam formed by the reaction gas sprayed by the nozzles 111 gradually increases. When the substrate processing device is used to process the substrate, the flow rate of the reaction gas sprayed by the nozzles 111 gradually increases from the area close to the center of the susceptor to the area far away from the center of the susceptor on the surface of the substrate, which offsets the difference in the dispersion degree of the reaction gas beam caused by the disturbance, and compared with the scheme in which the diameters of all the nozzles 111 are the same, the uniformity of the distribution of the reaction gas adsorbed on the surface of the substrate is improved, and the yield of the product is improved.
[0074] The terms "first", "second", etc. are only used for descriptive purposes and should not be construed as indicating or implying relative importance or an indicated number of technical features. Therefore, the features defined as "first", "second", etc. can explicitly or implicitly include one or more of the features. In the description of the present application, the meaning of "a plurality of" is two or more, unless otherwise explicitly specified and limited.
[0075] In the present application, unless otherwise explicitly specified and limited, the terms "assembly", "connection" and the like should be understood in a broad sense, for example, can be fixed connection, can also be detachable connection, or integral; can be mechanical connection, can also be electrical connection; can be directly connected, can also be indirectly connected through an intermediate medium, can be the internal communication of two elements or the interaction relationship between two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.
[0076] In the description of the present application, the description of the terms "some embodiments", "exemplarily" and the like means that the specific features, structures, materials or characteristics described in conjunction with the embodiments or examples are contained in at least one embodiment or example of the present application. In the present application, the illustrative description of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any appropriate manner in any one or more embodiments or examples. In addition, those skilled in the art can combine and combine the different embodiments or examples described in the present application and the features of the different embodiments or examples without contradiction.
[0077] Although the embodiments of the present application have been shown and described above, it is to be understood that the above embodiments are merely exemplary, and are not to be understood as limiting the present application, and the ordinary skilled in the art can make changes, modifications, replacements and variations to the above embodiments within the scope of the present application, and any changes or modifications made according to the claims and the specification of the present application shall be within the scope of the present application.
Claims
1. A bar shower characterized in that, The side of the strip-shaped nozzle is provided with a plurality of nozzles, and the plurality of nozzles are arranged at intervals along the length direction of the strip-shaped nozzle. The opening size of the nozzles gradually decreases from the first end to the second end of the length direction of the strip-shaped nozzle.
2. The bar showerhead of claim 1, wherein, The nozzles are circular holes, and the diameter of the nozzles gradually decreases from the first end to the second end of the length direction of the strip-shaped nozzle.
3. The bar showerhead of claim 1, wherein, The distance between adjacent nozzles gradually decreases from the first end to the second end of the length direction of the strip-shaped nozzle.
4. An air intake device characterized by comprising: The gas inlet device comprises a plurality of strip-shaped nozzles arranged side by side, the first ends of the plurality of strip-shaped nozzles are located on the same side, the plurality of strip-shaped nozzles comprise a first strip-shaped nozzle and a second strip-shaped nozzle, the second strip-shaped nozzle is arranged on one side of the first strip-shaped nozzle in the width direction, the first strip-shaped nozzle is used for introducing a reaction gas, and the second strip-shaped nozzle is used for introducing an adsorption improvement gas or a purge gas, and the adsorption improvement gas is used for improving the saturated adsorption rate of the reaction gas.
5. The air intake device of claim 4, wherein The plurality of strip-shaped nozzles further comprise a third strip-shaped nozzle, the second strip-shaped nozzle and the third strip-shaped nozzle are arranged on both sides of the first strip-shaped nozzle in the width direction respectively, and the third strip-shaped nozzle is used for introducing the adsorption improvement gas or the purge gas.
6. The air intake device of claim 5, wherein The gas discharged from the second strip-shaped nozzle and the third strip-shaped nozzle forms a gas curtain, and the shape of the gas curtain can be adjusted.
7. The air intake device of claim 6, wherein The gas inlet device further comprises a gas storage tank and a pressure regulating valve, the second strip-shaped nozzle is connected to the gas storage tank through one pressure regulating valve, the third strip-shaped nozzle is connected to the gas storage tank through another pressure regulating valve, the gas storage tanks connected to the second strip-shaped nozzle and the third strip-shaped nozzle are the same or different, and the pressure regulating valves are used at least for adjusting the shape of the gas curtain.
8. The air intake device of claim 6, wherein The gas discharged from the first strip-shaped nozzle forms a reaction gas beam, and the beam width of the reaction gas beam in the width direction of the first strip-shaped nozzle can be adjusted by adjusting the shape of the gas curtain formed by the gas discharged from the second strip-shaped nozzle and the third strip-shaped nozzle.
9. The air intake device of claim 5, wherein, The gas discharged from the second strip-shaped nozzle and the third strip-shaped nozzle forms a gas curtain, and the position of the gas curtain in the width direction of the strip-shaped nozzle can be adjusted.
10. The air intake device of claim 9, wherein, In the width direction of the first strip-shaped nozzle, the distances between the second strip-shaped nozzle, the third strip-shaped nozzle and the first strip-shaped nozzle can be adjusted; and / or The jet angle of the nozzles of the second strip-shaped nozzle and the third strip-shaped nozzle can be adjusted.
11. A substrate processing apparatus based on spatially separated atomic layer deposition, characterized by It comprises: a base, a plurality of substrate seats for carrying a substrate to be processed are arranged on the base; a plurality of gas inlet devices as claimed in any one of claims 4 to 10 are arranged above the base, each of the gas inlet devices is used for providing a corresponding reaction gas beam, and the strip-shaped nozzle of each of the gas inlet devices is located in a corresponding isolation space of a reaction chamber.