Wafer boat and furnace tube device

Abstract

The utility model provides a wafer boat and a furnace tube device, and relates to the technical field of semiconductor processes. The wafer boat comprises a first end part, a second end part and at least two supporting columns, the first end is opposite to the second end, the supporting columns are located between the first end and the second end, and a gap exists between every two adjacent supporting columns. A plurality of parallel supporting parts are arranged on the side, facing the other supporting columns, of one supporting column, and each supporting part comprises an inclined part and a supporting island. The first end of the inclined part is connected with the supporting column, the supporting island is located at the second end of the inclined part, and the first end is opposite to the second end; the inclined parts on all the supporting columns incline by a target angle from the second end part to the first end part; and the opposite supporting islands on all the supporting columns are matched with each other to place a wafer. According to the scheme provided by the invention, the splitting defect of the wafer at the supporting part provided by the wafer boat due to impurity residues or increased thickness difference of film layer deposition can be reduced.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to the technical field of semiconductor process, and in particular, to a boat and furnace tube device. BACKGROUND

[0002] The boat is an apparatus for carrying wafers. However, because the furnace tube process places the boat in the furnace tube, film layers or by-products may be deposited on the boat during deposition of the film layers, and periodic cleaning of the boat may cause unexpected defects on the wafers carried by the boat for subsequent reactions, thereby reducing yield. As the film thickness gradually increases, the probability of wafer splitting defects increases, and wafer splitting defects are more likely to occur at the back of the wafer in contact with the slot (support column) of the boat. This may be because the slot (support column) supports the wafer while also causing a more serious blockage at the support position of the wafer, and impurities are also likely to remain. SUMMARY

[0003] The present disclosure provides a boat and furnace tube device, by tilting the support portions along the same side by a target angle, the contact area between the back of the wafer and the support portion can be reduced on the basis of ensuring the smoothness of the airflow for processing the wafer, thereby helping to reduce wafer splitting defects caused by the thickness difference of the film layer deposition or the residue of impurities at the support portion provided by the boat on the basis of ensuring the integrity of the film layer on the back of the wafer.

[0004] According to a first aspect of the embodiments of the present application, a boat is provided, comprising: a first end portion, a second end portion, and at least two support columns;

[0005] The first end portion and the second end portion are opposite, the support columns are located between the first end portion and the second end portion, and a gap exists between adjacent two support columns;

[0006] One side of each support column facing the other support columns is provided with a plurality of parallel support portions, and each support portion comprises an inclined portion and a support island; the first end of the inclined portion is connected with the support column, and the support island is located at the second end of the inclined portion, and the first end and the second end are opposite;

[0007] The inclined portions on all the support columns are inclined by a target angle from the second end portion to the first end portion;

[0008] The support islands at opposite positions on all the support columns cooperate to place the wafer.

[0009] In an embodiment, the inclined portion comprises a first inclined surface close to the first end portion and a second inclined surface close to the second end portion; the first inclined surface is parallel to the second inclined surface; an angle formed between a horizontal plane opposite the first inclined surface and the second inclined surface is the target angle, and the horizontal plane is perpendicular to the extension direction of the support column.

[0010] In an embodiment, the target angle is 10 degrees to 60 degrees.

[0011] In an embodiment, the support island comprises: a first support surface near the first end and a second support surface near the second end; the first support surface and the second support surface are planar; the first support surface is parallel to the horizontal plane; the first support surfaces on all the support islands are matched with each other to place the wafer; the second support surface is matched with the inclined surface.

[0012] In an embodiment, in at least one longitudinal section of the support island, the support island is in a trapezoidal structure.

[0013] In an embodiment, the contact area of the first support surface with the back of the wafer is less than the contact area of the second support surface with the first inclined surface.

[0014] In an embodiment, the area of the first support surface is less than 1 / 2 of the area of the first inclined surface.

[0015] According to a second aspect of the embodiments of the present application, a furnace tube device is provided, comprising:

[0016] a furnace tube;

[0017] the boat as described in the first aspect; the first end of the boat is located at the top of the furnace tube, and the second end of the boat is located at the bottom of the furnace tube.

[0018] In an embodiment, the furnace tube device further comprises: a chamber; the furnace tube is located in the chamber; and the boat is located in the chamber.

[0019] In an embodiment, the furnace tube device is a vertical furnace tube device.

[0020] According to the scheme of the present disclosure, by inclining the support portions by the target angle along the same side, the contact area of the wafer back with the support portions can be reduced on the basis of ensuring the smoothness of the airflow for processing the wafer, thereby helping to reduce the splitting defects of the wafer at the support portions provided by the boat due to the difference in the thickness of the residual impurities or film deposition, on the basis of ensuring the integrity of the film on the wafer back.

[0021] It should be understood that the content described in the utility model content part is not intended to limit the key or important features of the embodiments of the present disclosure, nor is it intended to limit the scope of the present disclosure. Other features of the present disclosure will become apparent through the following description. BRIEF DESCRIPTION OF DRAWINGS

[0022] The above and other features, advantages, and aspects of embodiments of the present disclosure will become more apparent by describing in detail the following embodiments with reference to the attached drawings. In the drawings, the same or similar reference numerals refer to the same or similar elements, in which:

[0023] Figure 1 is a schematic view of a wafer back and a wafer surface of a wafer;

[0024] Figure 2 is a schematic view of a structure of a wafer boat of an embodiment of the present disclosure;

[0025] Figure 3 is a schematic view of a structure of a support groove of an embodiment of the present disclosure;

[0026] FIG. 4(a)-FIG. 4(b) are comparative schematic views of a contact area of a support portion not being inclined at a target angle on the same side and a support portion being inclined at a target angle on the same side of an embodiment of the present disclosure;

[0027] FIG. 5(a)-FIG. 5(b) are schematic views of a support island of an embodiment of the present disclosure;

[0028] FIG. 6(a)-FIG. 6(b) are comparative schematic views of a contact area with a wafer back of a support portion not being inclined at a target angle on the same side and a support portion being inclined at a target angle on the same side of an embodiment of the present disclosure;

[0029] Figure 7 is a schematic view of a structure of a furnace tube device of an embodiment of the present disclosure.

[0030] BRIEF DESCRIPTION OF DRAWINGS

[0031] 1: wafer boat;

[0032] 2: first end portion;

[0033] 3: second end portion;

[0034] 4: support groove;

[0035] 5: support portion;

[0036] 6: support column;

[0037] 7: support island;

[0038] 8: wafer;

[0039] 9: furnace tube;

[0040] 10: chamber. DETAILED DESCRIPTION

[0041] Exemplary embodiments of the present disclosure are described herein below with reference to the accompanying drawings, which include various details of the embodiments of the present disclosure to assist in understanding them. These should be considered as merely exemplary. Thus, those of ordinary skill in the art will recognize various changes and modifications of the embodiments described herein, which do not depart from the scope and spirit of the present disclosure. Also, descriptions of known functions and constructions are omitted herein for clarity and conciseness.

[0042] In the related art, the furnace tube process is widely used in semiconductor processes due to its good film quality and high production efficiency. The boat is a device used to carry wafers in the furnace tube device. However, in actual application, the boat may be damaged during cleaning due to the thin film, by-products and the like generated during the furnace tube process.

[0043] In the related art, a thin film is formed on the surface of the boat by purging the boat or coating the surface of the boat to protect the boat. However, peeling defects only occur at the critical point of stress, and during other periods, purging or coating wastes production time and increases production costs. At the same time, there is no obvious effect on the peeling defects that may occur on the back of the wafer itself.

[0044] In the prior art, as the thickness of the furnace tube process film gradually accumulates, the peeling defects in the tube environment gradually increase. After purging or coating, peeling defects also occur, and the wafer surface still has peeling defects. The causes of peeling defects are as follows: after deposition in the furnace tube process, as shown in the wafer back and the boat support part (boat slot) contact place is not deposited with the current film, peeling is easy to occur at the interface, and the thicker the deposition thickness (THK), the greater the probability. Figure 1

[0045] To solve the above technical problems, the present disclosure provides a boat and a furnace tube device. The boat includes a first end portion and a second end portion opposite the first end portion, a plurality of parallel support slots for placing wafers are arranged between the first end portion and the second end portion, each support slot is provided with a first support portion, a second support portion and a third support portion separated from each other for supporting the wafer, the first support portion, the second support portion and the third support portion are inclined at the same side at a target angle, and a support island is formed on the right side of the surface of the first support portion, the second support portion and the third support portion. By any embodiment of the present disclosure, the contact area between the wafer back and the support portion can be reduced on the basis of ensuring the smoothness of the airflow for processing the wafer, thereby helping to reduce the splitting defects of the wafer at the support portion provided by the boat due to the residue of impurities or the difference in the thickness of the film layer deposition on the basis of ensuring the integrity of the wafer back film.

[0046] The present disclosure provides a boat 1, which includes a first end portion 2, a second end portion 3 and at least two support columns 6.​

[0047] The first end portion 2 is opposite to the second end portion 3, and the support columns 6 are located between the first end portion 2 and the second end portion 3, and there is a gap between adjacent two support columns 6;

[0048] The side of one support column 6 facing the other support column 6 is provided with a plurality of parallel support portions 5, and the support portion 5 comprises an inclined portion and a support island 7; the first end of the inclined portion is connected with the support column 6, and the support island 7 is located at the second end of the inclined portion, and the first end is opposite to the second end;

[0049] The inclined portions on all the support columns 6 are inclined at a target angle from the second end portion 3 to the first end portion 2;

[0050] The support islands 7 located at opposite positions on all the support columns 6 cooperate with each other to place the wafer 8.

[0051] According to the embodiments of the present disclosure, it should be noted that:

[0052] Referring to Figure 2 , the wafer boat 1 is used to load the wafer 8 and provide necessary support and protection during the production, processing and transportation of the wafer 8.

[0053] Referring to Figure 2 , the first end portion 2 is located at the top of the furnace tube 9, and the second end portion 3 is located at the bottom of the furnace tube 9, and the first end portion 2 is opposite to the second end portion 3. The first end portion 2 is opposite to the second end portion 3, and the support columns 6 are located between the first end portion 2 and the second end portion 3, and there is a gap between adjacent two support columns 6. The second end portion 3 can be used as a base for the support structure of the entire wafer boat 1. Here, the furnace tube 9 is a vertical furnace tube. The material of the first end portion 2 and the second end portion 3 generally has excellent heat resistance and corrosion resistance.

[0054] The wafer 8 is a basic material for semiconductor manufacturing, made of high-purity single crystal silicon, in the form of a circular thin sheet. It is a key component for building integrated circuits and chips. During the semiconductor process, the wafer 8 needs to be placed in the support groove 4 of the wafer boat 1 for subsequent processing. The material and structure of the wafer boat 1 are usually designed to withstand high temperature, prevent static electricity, resist wear and tear, etc., to ensure the safety and stability of the wafer 8 during processing.

[0055] Referring to Figure 3The support groove 4 is used for placing the wafer 8, and a plurality of parallel support grooves 4 are arranged between the first end 2 and the second end 3 of the wafer boat 1. Each support groove 4 includes a first support part, a second support part and a third support part. In each support groove 4, the first support part, the second support part and the third support part are identical in shape and size, and are separated from each other to support the wafer 8 together. The shape of the support groove 4 is matched with the shape of the wafer 8 to ensure that the wafer 8 can be stably placed in the support groove 4. The common shape of the wafer 8 is circular, so the support groove 4 is also designed to be circular or quasi-circular. In addition, the size of the support groove 4 also needs to be accurately matched with the size of the wafer 8 to ensure the stability and position accuracy of the wafer 8 in the groove. Here, the size and number of the support groove 4 are not limited, and can be set according to the requirements of the furnace tube process.

[0056] With reference to Figure 3 In order to adapt to the shape of the wafer 8, the support part 5 includes at least a first support part, a second support part and a third support part. The shape of the support part 5 is trapezoidal structure or cuboid, and the corners can be rounded to adapt to the wafer 8. The support part 5 can be connected with the support groove 4 by fixed connection, such as welding, bolt connection; the support part 5 can also be connected with the support groove 4 by detachable connection, such as respectively setting the buckle, slot, thread connection and other ways which are matched with each other; the support part 5 can also be connected with the support groove 4 by elastic connection, such as setting elastic elements (such as springs, rubber pads, etc.) between the support groove 4 and the support part 5 to buffer vibration and impact. Here, the size and shape of the support part 5 are not limited, and can be set according to the requirements of the furnace tube process.

[0057] It can be understood that, with reference to Figure 2, the first support column, the second support column and the third support column are respectively extended from the first end portion 2 to the second end portion 3. The lengths of the first support column, the second support column and the third support column are the same, separated from each other and parallel to each other. The lengths of the first support column, the second support column and the third support column are determined by the distance from the first end portion 2 to the second end portion 3. The first support portion is tightly fitted to the first support column, the second support portion is tightly fitted to the second support column, and the third support portion is tightly fitted to the third support column. Specifically, the first support column, the second support column and the third support column all present a columnar shape, and the surface of the columnar body can be specially treated, such as polishing or coating, to reduce friction and pollution with the silicon wafer; the distances of the first support column, the second support column and the third support column are equal, which helps to form a uniform support network inside the boat 1. This layout can ensure that the space distribution between the silicon wafers is reasonable, which is conducive to heat exchange and gas flow. The connection points of the first support column, the second support column and the third support column with the second end portion 3 can be equilateral triangle or isosceles triangle. In this way, the best stability and support effect can be provided, and it is ensured that the silicon wafers will not deform due to uneven stress during heating or processing.

[0058] With reference to Figure 3 , the first support portion is tightly fitted to the first support column; the second support portion is tightly fitted to the second support column; and the third support portion is tightly fitted to the third support column. Specifically, the first support portion being tightly fitted to the first support column, the second support portion being tightly fitted to the second support column, and the third support portion being tightly fitted to the third support column can be achieved by welding, bolt connection, buckle connection, adhesion and mechanical locking, etc. Exemplarily, the first support portion and the first support column are firmly connected together by welding technology, such as laser welding, electric arc welding, etc.; welding can ensure the tight fitting between the two and provide strong structural strength. Exemplarily, the second support portion is fixed on the second support column using fasteners such as bolts and nuts; it is convenient for disassembly and reassembly, and at the same time, it can provide stable connection; however, during installation, it is necessary to ensure the tight cooperation between the bolt and the nut, and to use appropriate locking devices (such as locking washers) to prevent loosening. Exemplarily, the buckle structure on the third support portion and the third support column is designed to achieve tight fitting by buckling. Exemplarily, the first support portion is pasted on the first support column using high-strength adhesive. Exemplarily, the first support portion is fixed on the first support column by setting an expansion plug thereon or using press-fit. Exemplarily, the first support portion is locked on the first support column using a mechanical locking device (such as a locking pin, a locking clamp, etc.). This method is convenient for disassembly and reassembly, and at the same time, it can provide stable connection. During installation, it is necessary to ensure the tight cooperation between the bolt and the nut, and to use appropriate locking devices (such as locking washers) to prevent loosening.

[0059] Referring to FIGS. 5(a)-5(b), the support part 5 comprises a support island 7. The support island 7 is in a trapezoidal shape. Here, the shape of the support island 7 is not limited in particular, and can be determined according to the structure of the support part 5.

[0060] According to the embodiments of the present disclosure, by tilting the support part by the target angle on the same side, the contact area between the wafer back and the support part can be reduced on the basis of ensuring the smoothness of the air flow for processing the wafer, thereby helping to reduce the splitting defects of the wafer at the support part provided by the boat due to the residue of impurities or the difference in the thickness of the film layer deposition on the basis of ensuring the integrity of the wafer back film.

[0061] In one embodiment, the tilted part comprises a first tilted surface close to the first end part 2 and a second tilted surface close to the second end part 3; the first tilted surface is parallel to the second tilted surface; the angle formed between the horizontal surface opposite to the first tilted surface and the second tilted surface is the target angle, and the horizontal surface is perpendicular to the extension direction of the support column.

[0062] Referring to FIGS. 5(a)-5(b), the support part 5 comprises a support island 7. The support island 7 is in a trapezoidal shape. Here, the shape of the support island 7 is not limited in particular, and can be determined according to the structure of the support part 5. Figure 3 The target angle a is 10 degrees, and the tilted part on all the support columns 6 is tilted by 3 degrees from the second end part 3 to the first end part 2. Specifically, the first support part, the second support part, and the third support part are tilted by 3 degrees from the second end part 3 to the first end part 2. The support part 5 comprises a tilted part, the tilted part comprises a first tilted surface close to the first end part 2 and a second tilted surface close to the second end part 3; the angle formed between the horizontal surface opposite to the first tilted surface and the second tilted surface is the target angle.

[0063] According to the embodiments of the present disclosure, by tilting the support part by the target angle on the same side, the contact area between the wafer back and the support part can be reduced on the basis of ensuring the smoothness of the air flow for processing the wafer.

[0064] In one embodiment, the target angle is 10 degrees to 60 degrees. For example, the target angle a can be 10 degrees, 15 degrees, 20 degrees, 30 degrees, 40 degrees, 45 degrees, 50 degrees, or 60 degrees.

[0065] According to the embodiments of the present disclosure, it is to be noted that:

[0066] The target angle can be adjusted according to the requirements of the furnace tube process. Preferably, the target angle is 10 degrees to 60 degrees.

[0067] According to the embodiments of the present disclosure, by tilting the support part by 10 degrees on the same side, the contact area between the wafer back and the support part can be reduced on the basis of ensuring the smoothness of the air flow for processing the wafer.

[0068] In one embodiment, the support island 7 comprises a first support surface close to the first end 2 and a second support surface close to the second end 3; the first support surface and the second support surface are planar; the first support surface is parallel to the horizontal plane; the first support surfaces on all the support islands 7 are matched to each other to place the wafer 8; and the second support surface is matched to the inclined portion.

[0069] According to the embodiments of the present disclosure, it is to be noted that:

[0070] The area of the first support surface is smaller than that of the second support surface. The first support surface is in contact with the back surface of the wafer 8, and the second support surface is matched to the first inclined surface of the inclined portion.

[0071] According to the embodiments of the present disclosure, the first support surfaces on all the support islands are matched to each other to place the wafer; and the second support surface is matched to the inclined portion, which can prevent the wafer from sliding or shifting during placement, and help to improve the stability of the wafer boat.

[0072] In one embodiment, at least one longitudinal section view of the support island 7 is in a trapezoidal structure. Here, the longitudinal direction refers to the direction from the first end 2 to the second end 3 of the wafer boat.

[0073] According to the embodiments of the present disclosure, it is to be noted that:

[0074] The support island 7 is in a trapezoidal structure, which can be a trapezoidal structure formed by the first support surface and other surfaces with at least two right angles. Here, the specific structure of the trapezoidal structure is not specifically limited, and the specific structure can be set according to the requirements of the furnace tube process.

[0075] For example, in FIGS. 4(a)-4(b), when the first support portion, the second support portion, and the third support portion are not inclined at the target angle on the same side, as shown in FIG. 4(a), the contact area of the first support portion, the second support portion, and the third support portion with the back of the wafer is the dashed area A; when the first support portion, the second support portion, and the third support portion are inclined at the target angle on the same side, as shown in FIG. 4(b), the contact area of the first support portion, the second support portion, and the third support portion with the back of the wafer is the dashed area B. For example, in FIGS. 6(a)-6(b), when the first support portion, the second support portion, and the third support portion are not inclined at the target angle on the same side, as shown in FIG. 6(a); when the first support portion, the second support portion, and the third support portion are inclined at the target angle on the same side, as shown in FIG. 6(b); if the contact area is large, it will affect the uniformity of the heating of the wafer 8; if the contact area is small, the airflow is guided by the inclined surface of the support portion 5 to prevent accumulation, and the support island 7 is provided with sufficient reliable support force by the large-area support portion 5. The top area of the support island 7 is small to reduce the influence on the heating of the wafer 8.

[0076] According to an embodiment of the present disclosure, the support island is a trapezoidal structure, and the top of the support island has a small area, which can reduce the influence on the heating of the wafer.

[0077] In one embodiment, the contact area of the first support surface with the back of the wafer 8 is smaller than the contact area of the second support surface with the first inclined surface.

[0078] According to an embodiment of the present disclosure, it should be noted that:

[0079] The area of the first support surface is less than 1 / 2 of the area of the first inclined surface. For example, the area of the first support surface is 1 / 3 of the area of the first inclined surface; for another example, the area of the first support surface is 1 / 4 of the area of the first inclined surface. Here, the area of the first support surface and the area of the second support surface are not specifically limited, and the area can be set according to the requirements of the furnace tube process.

[0080] According to an embodiment of the present disclosure, the contact area of the first support surface with the back of the wafer is smaller than the contact area of the second support surface with the first inclined surface, which can guide the airflow through the inclined surface of the support part, prevent accumulation, and provide sufficient support force to the support island through the large-area support part; and the top of the support island has a small area to reduce the influence on the heating of the wafer.

[0081] The present disclosure provides a furnace tube device, as shown in Figure 7 The furnace tube device includes:

[0082] The furnace tube 9;

[0083] The wafer boat 1 as described above; the first end 2 of the wafer boat 1 is located at the top of the furnace tube 9, and the second end 3 of the wafer boat 1 is located at the bottom of the furnace tube 9.

[0084] According to an embodiment of the present disclosure, it should be noted that:

[0085] The furnace tube 9 is used for heat treatment of the wafer 8. The furnace tube 9 can include an outer quartz tube (Outer Tube), an inner quartz tube (Inner Tube), an exhaust cavity, and an air inlet cavity, etc.

[0086] According to an embodiment of the present disclosure, the service life of the furnace tube device can be improved.

[0087] In one embodiment, the furnace tube device further includes: a chamber 10; the furnace tube 9 is placed in the chamber 10; and the wafer boat 1 is placed in the chamber 10.

[0088] According to an embodiment of the present disclosure, it should be noted that:

[0089] The chamber 10 refers to an enclosed space inside the furnace tube device, which is used to accommodate the wafer boat 1 and the furnace tube 9 as well as other materials that need to be processed. The chamber 10 provides a controllable environment for the deposition process of the wafer 8, so that the wafer 8 or other materials can be heat treated under specific temperature, atmosphere and time conditions. The chamber 10 is usually made of high-temperature-resistant and corrosion-resistant materials to ensure stability and durability in high-temperature environments. The design of the chamber 10 usually takes into account factors such as heat conduction, heat radiation and heat convection to ensure that the wafer 8 is uniformly heated during the heat treatment process, thereby achieving the desired processing effect.

[0090] According to embodiments of the present disclosure, the stability and durability of the furnace tube device can be improved.

[0091] In one embodiment, the furnace tube device is a vertical furnace tube device.

[0092] According to embodiments of the present disclosure, it should be noted that:

[0093] The vertical furnace tube device refers to a device with a vertical structure design of the furnace tube. The core part of the vertical furnace tube device is a vertical chamber, which is composed of an external quartz tube and an internal quartz tube assembled inside the external tube. The vertical chamber is provided with a wafer boat 1 for carrying a plurality of wafers 8. The wafer boat 1 is used to fix and support the wafers 8 to ensure that the wafers 8 remain stable during heating.

[0094] According to embodiments of the present disclosure, the efficiency and quality of the deposition process of the wafer can be improved.

[0095] In the description of the present disclosure, it should be understood that, unless otherwise explicitly specified and limited, the orientation or positional relationship indicated by the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present disclosure and simplifying the description, and therefore cannot be understood as indicating or implying that the devices or elements indicated must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present disclosure.

[0096] In addition, the terms "first" and "second" are only for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined with "first" and "second" can explicitly or implicitly include one or more of the features. In the description of the present disclosure, the meaning of "multiple" is two or more, unless otherwise explicitly specified and limited.

[0097] In the present disclosure, unless specifically defined otherwise, the terms "mounting", "connected", "connecting", "fixed", and the like, should be construed broadly and, for example, can be a fixed connection, or a detachable connection, or integral; can be a mechanical connection, or an electrical connection, or a communication; can be a direct connection, or an indirect connection via an intermediate medium, or an internal connection of two elements, or an interaction relationship between two elements. For those skilled in the art, the specific meanings of the above terms in the present disclosure can be understood according to the specific circumstances.

[0098] In the present disclosure, unless specifically defined otherwise, "on" or "under" of a first feature to a second feature can include that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, "on", "above" and "over" of a first feature to a second feature includes that the first feature is directly above and obliquely above the second feature, or only indicates that the horizontal height of the first feature is higher than that of the second feature. "Under", "below" and "underneath" of a first feature to a second feature includes that the first feature is directly below and obliquely below the second feature, or only indicates that the horizontal height of the first feature is less than that of the second feature.

[0099] The above disclosure provides many different embodiments or examples for implementing different structures of the present disclosure. In order to simplify the disclosure of the present disclosure, the components and arrangements of specific examples are described above. Of course, they are only examples, and the purpose is not to limit the present disclosure. In addition, the present disclosure can repeatedly refer to reference numerals and / or reference letters in different examples. Such repetition is for the purpose of simplification and clarity, and does not itself indicate a relationship between the various embodiments and / or arrangements discussed.

[0100] The above detailed description does not constitute a limitation on the protection scope of the present disclosure. Those skilled in the art should understand that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modification, equivalent replacement and improvement within the spirit and principle of the present disclosure should be included in the protection scope of the present disclosure.

Claims

1. A crystal boat, characterized in that, include: The first end, the second end, and at least two support columns; The first end is opposite to the second end, the support column is located between the first end and the second end, and there is a gap between two adjacent support columns; A support column has multiple parallel support portions on one side facing other support columns. Each support portion includes an inclined portion and a support island. The first end of the inclined portion is connected to the support column, and the support island is located at the second end of the inclined portion. The first end and the second end are opposite to each other. The inclined portions on all the support columns are inclined at a target angle from the second end toward the first end; The support islands positioned opposite each other on all the support pillars cooperate to place the wafer.

2. The crystal boat according to claim 1, characterized in that, The inclined portion includes a first inclined surface near the first end and a second inclined surface near the second end; The first inclined surface is parallel to the second inclined surface; The angle formed between the first inclined surface and the horizontal plane opposite to the second inclined surface is the target angle, and the horizontal plane is perpendicular to the extension direction of the support column.

3. The crystal boat according to claim 2, characterized in that, The target angle is 10 degrees to 60 degrees.

4. The crystal boat according to claim 2, characterized in that, The support island includes: a first support surface near the first end and a second support surface near the second end; the first support surface and the second support surface are planar. The first support surface is parallel to the horizontal plane; the first support surfaces of all the support islands that are positioned opposite each other cooperate to place the wafer; The second support surface is in contact with the inclined portion.

5. The crystal boat according to claim 4, characterized in that, In at least one longitudinal sectional view of the support island, the support island is a trapezoidal structure.

6. The crystal boat according to claim 5, characterized in that, The contact area between the first support surface and the back of the wafer is smaller than the contact area between the second support surface and the first inclined surface.

7. The crystal boat according to claim 6, characterized in that, The area of ​​the first supporting surface is less than 1 / 2 of the area of ​​the first inclined surface.

8. A furnace tube device, characterized in that, include: Furnace tubes; The crystal boat as described in any one of claims 1-7; the first end of the crystal boat is located at the top of the furnace tube, and the second end of the crystal boat is located at the bottom of the furnace tube.

9. The furnace tube device according to claim 8, characterized in that, Also includes: The chamber; the furnace tube is placed in the chamber; the crystal boat is placed in the chamber.

10. The furnace tube device according to claim 9, characterized in that, The furnace tube assembly is a vertical furnace tube assembly.

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