DPIM half-bridge power module

Abstract

The utility model discloses a DPIM half-bridge power module, the module is configured with a ceramic substrate, and a power chip, power pins and a control pin which are arranged on the ceramic substrate, the power pins comprise a direct current power pin P1, a direct current power pin P2 and an alternating current power pin P3; the power chip is used for building a half-bridge circuit, the direct-current power pin P1 and the direct-current power pin P2 are connected with a power supply end of the half-bridge circuit, the alternating-current power pin P3 is connected with an output end of the half-bridge circuit, and the control pin is connected with a control end of the half-bridge circuit; and the current power pin P1, the current power pin P2 and the alternating current power pin P3 are oppositely arranged. According to the half-bridge power module, the power pins are oppositely arranged, so that the mutual interference of electric fields among the power pins is reduced, and the anti-electromagnetic interference capability and reliability of the power module are improved.

Description

TECHNICAL FIELD

[0001] The utility model belongs to the field of power semiconductor, especially a kind of DPIM half-bridge power module. BACKGROUND

[0002] Power semiconductor module is integrated encapsulation in the same package with multiple power chip devices, improve the degree of integration, can work under high frequency, high voltage and large current conditions, with the characteristics of high efficiency, energy saving, suitable for more application scenarios.As one of the core components of power electronics, half-bridge module also has a relatively wide application in industry and new energy field, the existing half-bridge power module, mainly by epoxy resin after being set on pin frame power chip is cured, form half-bridge power module device, however, the existing half-bridge module mostly sets all power pins on the same side of package, at the same time, small size package leads to compact structure, because direct current and alternating current can generate electromagnetic field, therefore, power pins are all set on the same side, which is prone to mutual interference between different electric fields of power pins during power device operation, high internal stray inductance, and low device reliability. SUMMARY

[0003] The utility model mainly improves the packaging and chip layout of the existing half-bridge module to improve the reliability of half-bridge power module, and provides a kind of DPIM half-bridge power module.

[0004] The DPIM half-bridge power module provided by the utility model is configured with a ceramic substrate, and a power chip, a power pin and a control pin arranged on the ceramic substrate, the power pin includes a direct current power pin P1, a direct current power pin P2 and an alternating current power pin P3, the power chip is used to build a half-bridge circuit, the direct current power pin P1 and the direct current power pin P2 are connected with the power supply end of the half-bridge circuit, the alternating current power pin P3 is connected with the output end of the half-bridge circuit, and the control pin is connected with the control end of the half-bridge circuit.

[0005] The direct current power pin P1, the direct current power pin P2 and the alternating current power pin P3 are oppositely arranged.

[0006] Further, the module is also configured with an output sampling pin I, and a current sensing resistor Ri is connected between the output sampling pin I and the power pin.

[0007] Further, the module is also configured with a sampling pin and a temperature detection pin T, the temperature detection pin T is located between the control pin and the direct current power pin, the sampling pin is adjacent to the control pin and not adjacent to the temperature detection pin T, and a thermistor Rt is connected between the temperature detection pins T.

[0008] Further, the module is also configured with temperature detection pins T, and a thermistor Rt is overlapped between the detection pins T.

[0009] Further, the temperature detection pins T are located between the control pins and the DC power pins.

[0010] Further, the module is also configured with auxiliary pins.

[0011] Further, a transition metal layer is arranged between the upper bridge and the lower bridge of the half-bridge circuit, and the bonding wire for electrical connection is connected with the transition metal layer.

[0012] Further, the power chip is N chips, and N is a positive integer greater than or equal to 2.

[0013] Further, the module is also configured with auxiliary diodes for preventing the power chip from being broken down, and each power chip is configured with two auxiliary diodes.

[0014] Further, the package is silicone gel or epoxy resin.

[0015] The half-bridge power module has the advantages that the power pins are arranged oppositely, the mutual interference of electric fields between the power pins is reduced, the anti-electromagnetic interference capability and reliability of the power module are improved, the silicone gel and the ceramic substrate are used as the package and the power carrier, the package has the advantages of good heat dissipation effect and low cost, and the like. BRIEF DESCRIPTION OF DRAWINGS

[0016] In order to more clearly illustrate the embodiments of the present application, the drawings needed to be used or referred to in the embodiments will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained from the drawings without creative labor:

[0017] Figures 1-3 The structure of the DPIM half-bridge power module and the packaging schematic diagram thereof are described for the embodiment one of the present application.

[0018] Figure 4 、 5 The structure of the DPIM half-bridge power module and the packaging schematic diagram thereof are described for the embodiment two of the present application.

[0019] Figures 6-10 The structure of the DPIM half-bridge power module and the corresponding packaging schematic diagram thereof are described for the embodiment three of the present application. DETAILED DESCRIPTION

[0020] This section describes the application in more detail with reference to the attached drawings, which illustrate an illustrative embodiment of the application. However, the application is not limited to the illustrative embodiments described herein but can be embodied in many different forms. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the application to those skilled in the art.

[0021] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and "comprising", when used in this specification, specify the presence of stated features, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, steps, operations, elements, components, and / or groups thereof.

[0022] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

[0023] The power pin refers to the pin connected with the direct current power supply and alternating current output. The power pin of the power module includes direct current power pin and alternating current power pin. When the alternating current power pin is located between or adjacent to the direct current power pin, due to the difference between the magnetic field generated by the alternating current and the magnetic field generated by the direct current, electromagnetic interference exists between them. After the power module works for a long time, the electromagnetic field generated by the alternating current will change with external factors such as temperature, which will further cause the alternating magnetic field, which is already disturbed, to be more unstable. At this time, it will cause unstable power output and large stray.

[0024] The control pin refers to the pin connected with the control end of the internal functional circuit of the power module, and the external control signal is connected through the control pin. The sampling pin refers to the pin connected with the sampling end of the internal functional circuit of the power module, and the external acquisition device / circuit obtains the current, voltage and other parameters of the internal functional circuit of the power module through the pin. The temperature detection pin refers to the pin connected with the temperature sensing element in the power module, and the external temperature detection device / circuit obtains the working temperature of the power module through the pin.

[0025] The control pin, the sampling pin and the temperature detection pin are generally connected with external devices / circuits, and mainly change the corresponding state by receiving control signals, and the process of the electrical signal is small, and the influence on the power pin can be ignored, so the control pin, the sampling pin and the temperature detection pin can be adjacent to the power pin.

[0026] The power module is an electric power electronic component, which refers to that the transistors, resistors, capacitors, inductors and pins required in a functional circuit are arranged on a metal sheet / metal substrate according to the functional circuit, the components are electrically connected through bonding wires, transition metal sheets and the like, and a corresponding functional circuit is built, and then the microstructure is packaged to realize electrical connection with external components, circuits, ICs and the like through the pins.

[0027] In order to improve the anti-electromagnetic interference capability of the power module, the utility model provides a kind of DPIM half bridge power module, the module is configured with ceramic substrate 1, and power chip 2, direct current power pin P1, direct current power pin P2, alternating current power pin P3 and control pin are arranged on ceramic substrate 1, power chip 2 is used to build half bridge circuit, direct current power pin P1 and direct current power pin P2 are connected with the power supply end of half bridge circuit, for high power VCC and low power VSS or GND access, provide direct current bias for power chip 2;Alternating current power pin P3 is connected with the output end of half bridge circuit, for connecting with load, provides alternating current signal for load;Control pin is connected with the control end of power chip 2, for control signal access, provides driving bias for power chip;Direct current power pin P1, direct current power pin P2, alternating current power pin P3 are oppositely arranged.

[0028] The opposite arrangement of direct current power pin P1, direct current power pin P2 and alternating current power pin P3 in the module refers to that alternating current power pin P3 is not adjacent to direct current power pin P1 and direct current power pin P2, including the following cases:

[0029] (1) direct current power pin P1 and direct current power pin P2 are located on the same side, and alternating current power pin P3 is located on the other side;

[0030] (2) direct current power pin P1 and direct current power pin P2 are located on the same side, and alternating current power pin P3 is located on the other side;

[0031] (3) direct current power pin P1 and alternating current power pin P3 are located on the same side, and direct current power pin P2 is located on the other side;

[0032] (4) direct current power pin P2 and alternating current power pin P3 are located on the same side, and direct current power pin P1 is located on the other side.

[0033] In combination Figures 1-10 In particular, the half-bridge DPIM module has the following several embodiments.

[0034] Embodiment one

[0035] Referring to Figures 1-3 The DPIM half-bridge power module includes a ceramic substrate 1, two MOSFET power chips 2 (Q1, Q2), a direct current power pin P1, a direct current power pin P2, an alternating current power pin P3, a control pin G1, a control pin G2, a plurality of bonding wires 3, and a package 5.

[0036] The two MOSFET power chips 3 are arranged on the ceramic substrate 1 in a half-bridge circuit structure as shown in Figure 2 The control pins G1 and G2 are arranged on the corresponding electrical layer of the ceramic substrate 1 of the gate of the MOSFET power chip and are connected to the gate of Q1 and the gate of Q2 (G1, G2) through the bonding wires; the direct current power pins P1 and P2 are arranged on the same side of the ceramic substrate 1, and the alternating current power pin P3 is arranged on the other side.

[0037] The power module has the following two working modes.

[0038] The first working mode: the direct current power pin P1 is used as a direct current power source pin for power input, and a high power VCC is input; the control pins G1 and G2 are connected to an effective signal to make Q1 and Q2 conductive. The power inverter path is: P1-->P3-->P2, the alternating current power pin P3 is used as a phase change current (U) power output pin, and the direct current power pin P2 is connected to a low power VSS or a ground pin GND. In this working mode, Q1 and Q2 are preferably N-type and are connected in the connection mode as shown in Figure 2 ; or Q1 is N-type and Q2 is P-type, Q1 is connected according to the similar half-bridge structure connection relationship as shown in Figure 2 , the source of Q2 is connected to the source of Q1, the drain is connected to the direct current power pin P2, and the gate is connected to the control pin G2; or Q1 is P-type and Q2 is N-type, the source of Q1 is connected to P1, the drain is connected to the drain of Q2, and the source of Q2 is connected to P2; or other structures that can make the module power inverter path: P1-->P3-->P2.

[0039] The second operating mode: DC power pin P2 serves as the DC power source pin for power input, with a high power supply VCC input; valid signals are applied to control pins G1 and G2 to turn on Q1 and Q2. The power inverter path is: P2 --> P3 --> P1. AC power pin P3 serves as the power output pin for the phase change current (U), and DC power pin P1 is connected to the low power supply VSS or ground pin connected to GND. In this operating mode, Q1 and Q2 are preferably P-type, according to... Figure 2 Similar half-bridge connection relationships; or Q1 is P-type, Q2 is N-type, the drain of Q1 is connected to P1, the source is connected to the source of Q2, and the drain of Q2 is connected to P2; or Q1 is N-type, Q2 is P-type, the source of Q1 is connected to P1, the drain is connected to the drain of Q2, and the source of Q2 is connected to P2; or other structures that enable the module power inversion path to be: P2-->P3-->P1.

[0040] In this implementation, the control pins G1 and G2 are positioned relative to each other, avoiding mutual interference between control signals. This ensures that the power module operates stably, safely, and promptly according to external control signals, thus improving the module's reliability.

[0041] The module in this embodiment is also configured with sampling pins, including a first sampling pin S1 connected to the source of the upper bridge power chip and a second sampling pin S2 connected to the source of the lower bridge power chip. The upper and lower bridge currents of the half-bridge circuit can be obtained through the sampling pins.

[0042] Furthermore, the sampling pin also includes an output sampling pin I, and a current sensing resistor Ri is connected between the output sampling pin I and the AC power pin P3; the output of the half-bridge circuit forms a voltage under the action of the current sensing resistor Ri, or the current limiting effect of the current sensing resistor Ri is used to obtain relevant parameters (voltage, current) through the output sampling pin I, and in conjunction with the external detection module, the alternating power output of the power module can be detected.

[0043] The module in this embodiment is also equipped with temperature detection pins T, including temperature detection pin T1 and temperature detection pin T2. ​​A thermistor Rt is connected between the electrical metal layers where temperature detection pins T1 and T2 are located to detect the heat generated during the operation of the power module. When the module in this embodiment is equipped with sampling pins, the control pin and the sampling pin are arranged adjacently, and the temperature detection pins T1 and T2 are arranged between the control pin and the power supply pin, but not between the control pin and the sampling pin, further separating the control pin, the sampling pin and the power supply pin, and further improving the electromagnetic interference immunity of the power device.

[0044] When the module in this embodiment does not have a sampling pin configured, the positions of temperature detection pins T1 and T2 are arranged according to the requirements of external applications.

[0045] Example 2

[0046] like Figure 4 , 5 As shown, the DPIM half-bridge power module of this embodiment includes a ceramic substrate 1, a power chip 2, DC power pins P1, P2, AC power pins P3, control pins G1 and G2, several bonding wires 3, and a package 5. The power chips are configured to be N, where N is a positive integer greater than 2, and are labeled as Q11, Q12, Q13, ..., Q1N and Q21, Q22, Q23, ..., Q2N according to the half-bridge circuit configuration (the first subscript indicates the upper bridge or the lower bridge, 1 indicates the upper bridge, 2 indicates the lower bridge, and the second subscript indicates the number of chips).

[0047] The gate of the upper-bridge power chip shares a common control pin G1, and the drain or source shares a common DC power pin P1. The gate of the lower-bridge power chip shares a common control pin G2, and the drain or source shares a common DC power pin P2. Figure 4 As shown in the figure, six power chips are illustrated as an example.

[0048] Specifically, in this embodiment, the power chips 5 configured as a half-bridge circuit, Q11, Q12, Q13, ..., Q1N, are of the same type; Q21, Q22, Q23, ..., Q2N are of the same type. The types of chips (Q11, Q12, Q13, ..., Q1N) and (Q21, Q22, Q23, ..., Q2N) can be the same or different. Specifically, the module in this embodiment has the same two operating modes as described in Embodiment 1, which will not be repeated here. In this embodiment, multiple power chips can be connected in parallel on both the upper and lower bridges, making it suitable for high-power applications.

[0049] In this implementation, the control pins G1 and G2 are positioned relative to each other, avoiding mutual interference between control signals. This ensures that the power module operates stably, safely, and promptly according to external control signals, thus improving the module's reliability.

[0050] The module in this embodiment is also configured with sampling pins, including a first sampling pin S1 connected to the source of the upper bridge power chip and a second sampling pin S2 connected to the source of the lower bridge power chip. The upper and lower bridge currents of the half-bridge circuit can be obtained through the sampling pins.

[0051] Further, the sampling pin of the embodiment further comprises an output sampling pin I, and a current detection resistor Ri is connected between the output sampling pin I and the DC power pin P2; the half-bridge circuit output forms a voltage under the action of the current detection resistor Ri, or the current detection resistor Ri is used to obtain relevant parameters (voltage and current) to obtain the power loss of the power module shown in the embodiment, and the external detection module is used to detect the alternating power output by the power module.

[0052] The module of the embodiment is further provided with temperature detection pins T, including temperature detection pin T1 and temperature detection pin T2. A thermistor Rt is connected between the electrical metal layers where the temperature detection pins T1 and T2 are located, and is used to detect the heat generated by the power module during operation. When the module of the embodiment is provided with sampling pins, the control pins and the sampling pins are arranged adjacently, the temperature detection pins T1 and T2 are arranged between the control pins and the power supply power pins, and are not located between the control pins and the sampling pins, and the control pins, the sampling pins and the power supply power pins are further spaced apart, thereby further improving the anti-electromagnetic interference capability of the power device.

[0053] When the module of the embodiment is not provided with sampling pins, the temperature detection pins T1 and T2 are arranged at any position according to the situation.

[0054] Embodiment Three

[0055] Reference Figures 6-10 The module provided in the embodiment further comprises an auxiliary diode 4 (D) on the basis of the modules provided in Embodiment One and Embodiment Two. The auxiliary diode can be an FRD freewheeling diode, a diode for preventing the power chip from being broken down, and the like, thereby further improving the safety and reliability of the power module.

[0056] Specifically, the remaining settings and working modes of the module of the embodiment are the same as those of Embodiment One and Embodiment Two, and will not be described herein.

[0057] The auxiliary diode 4 can be configured as one or two or more according to actual application requirements, and the embodiment preferably has two. One or two auxiliary diodes are configured for each power chip. When the auxiliary diode is configured as two, the two auxiliary diodes can be diodes of the same type, for example, both are FRD freewheeling diodes or both are ionization diodes; or can be diodes of different types, for example, the first auxiliary diode is an FRD freewheeling diode, and the second auxiliary diode is an ionization diode.

[0058] Configuring two auxiliary diodes can make the DPIM half-bridge circuit structure provided in the embodiment more symmetrical, and can further improve the safety and reliability of the power module during operation.

[0059] In the module provided in this embodiment, the DC power pin P1 and the AC power pin P3 are located on the same side and isolated by an auxiliary pin P that does not participate in electrical connection. The DC power pin P2 is located on the opposite side. The power module has lower electromagnetic interference and less internal straying. At the same time, it has stronger external compatibility. Since there is no current sensing resistor and thermistor, this solution is more suitable for low-power platforms and has reliable performance.

[0060] The modules in this embodiment also have the two working modes described in Embodiment 1, which will not be repeated here.

[0061] To further improve the reliability of this module (including the power modules provided in Embodiment 1, Embodiment 2, and Embodiment 3), an auxiliary pin P (such as...) is provided on the AC power pin P3 side. Figure 1 (As shown). The auxiliary pin P in this module is the same as that in the prior art (CN221508178U), and does not participate in the implementation of electrical functions, but only improves the stability of the power module terminal application.

[0062] The power modules provided in Embodiments 1, 2, and 3 have power chip 2, power pins, control pins, acquisition pins, and temperature detection pins arranged on a ceramic substrate 1. After being electrically connected to each other by bonding wires 3, they are encapsulated by insulating colloid 5 to form a half-bridge DPIM module packaging structure, which has the advantages of good compatibility, low power loss, low cost, and more reliable electrical performance.

[0063] The encapsulation body 5 is an insulating colloid, such as silicone gel, epoxy resin and other electrical insulating materials. In this embodiment, silicone gel is preferred, which can directly encapsulate the ceramic substrate, power chip, bonding wire, etc., without the need for an encapsulation frame, resulting in low cost and advantages such as simplifying the encapsulation structure of the power module, reducing encapsulation costs, and reducing the assembly volume of the encapsulation structure. In addition, the encapsulation body can also protect the power chip and isolate the power chip 2 from external moisture and dust.

[0064] The power module provided by this utility model reduces the concentration of power pins, thereby reducing electromagnetic interference. At the same time, the internal power chips share a single control pin and sampling pin, which ensures the consistency of conduction / turn-off when multiple chips work together, further improving the consistency of the switching performance of the power module. Furthermore, it eliminates the need to set control pins and sampling pins individually, reducing costs.

[0065] The power chip of the power module provided by this utility model is not limited to silicon-based MOSFETs, but can also be applied to IGBTs, SiC, GaN and other types of triode transistor devices.

[0066] The present disclosure has been described with reference to the above embodiments, however, the above embodiments are merely examples of implementing the present disclosure. It must be pointed out that the disclosed embodiments do not limit the scope of the present disclosure. On the contrary, modifications and improvements made without departing from the spirit and scope of the present disclosure are within the scope of patent protection of the present disclosure.

Claims

1. A DPIM half-bridge power module, characterized by, The module is configured with a ceramic substrate, and a power chip, a power pin and a control pin arranged on the ceramic substrate, the power pin includes a direct current power pin P1, a direct current power pin P2 and an alternating current power pin P3; the power chip is used to build a half-bridge circuit, the direct current power pin P1 and the direct current power pin P2 are connected with a power supply end of the half-bridge circuit, the alternating current power pin P3 is connected with an output end of the half-bridge circuit, and the control pin is connected with a control end of the half-bridge circuit. The direct current power pin P1, the direct current power pin P2 and the alternating current power pin P3 are oppositely arranged.

2. The DPIM half-bridge power module of claim 1, wherein, The module is further configured with an output sampling pin I, and a current detection resistor Ri is arranged between the output sampling pin I and the power pin.

3. The DPIM half-bridge power module of claim 1, wherein, The module is further configured with a sampling pin and a temperature detection pin T, the temperature detection pin T is located between the control pin and the direct current power pin, the sampling pin is adjacent to the control pin and is not adjacent to the temperature detection pin T; and a thermistor Rt is arranged between the temperature detection pins T.

4. The DPIM half bridge power module of claim 1, wherein, The module is further configured with a temperature detection pin T, and a thermistor Rt is arranged between the temperature detection pins T.

5. The DPIM half-bridge power module of claim 4, wherein, The temperature detection pin T is located between the control pin and the direct current power pin.

6. The DPIM half bridge power module of claim 1, wherein, The module is further configured with an auxiliary pin.

7. The DPIM half bridge power module of claim 1, wherein, A transition metal layer is arranged between the upper bridge and the lower bridge of the half-bridge circuit, and a bonding wire for electrical connection is connected with the transition metal layer.

8. The DPIM half-bridge power module according to any one of claims 1 to 7, characterized in that The power chip is an N chip, and N is a positive integer greater than or equal to 2.

9. The DPIM half-bridge power module according to any one of claims 1 to 7, characterized in that The module further includes auxiliary diodes for preventing the power chip from being broken down, and each power chip is configured with two auxiliary diodes.

10. The DPIM half-bridge power module according to any one of claims 1 to 7, characterized in that The module further includes a packaging body, and the packaging body is silicone or epoxy resin.

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