Wafer gap shielding device and electroplating device comprising same

Abstract

The utility model provides a wafer gap shielding device and an electroplating device comprising the same, the wafer gap shielding device comprises a connecting part, one side of the connecting part is used for being detachably connected with a wafer electroplating clamp, the connecting part is provided with an accommodating hole, and the accommodating hole is used for accommodating a wafer; the shielding part is detachably connected to the side, away from the wafer electroplating clamp, of the connecting part, the shielding part is arranged corresponding to a notch of the wafer in the cathode projection direction of the wafer, and the shielding part is used for shielding an electric field line at the notch of the wafer. Through the arrangement of the connecting part and the shielding part, in the electroplating process, the shielding part shields an electric field line at the notch of the wafer corresponding to the cathode of the wafer, the current distribution at the position is weakened, and the metal deposition rate at the notch of the wafer is reduced, so that the thickness of an electroplated layer at the notch is thinned, and the problem that the thickness of the electroplated layer at the notch is too thick and poor in uniformity during electroplating is solved.

Description

Technical Field

[0001] This utility model relates to the field of wafer electroplating technology, and in particular to a wafer notch shielding device and an electroplating apparatus including the notch shielding device. Background Technology

[0002] In the manufacturing and processing of silicon wafers, a small planar area is typically cut into the circular surface; this area is called a flat zone. Flat zones are usually located at a specific position around the perimeter of the wafer. Flat zones are essential in the wafer manufacturing process. First, they provide a reference orientation mark to determine the wafer's orientation and position during chip manufacturing. Second, they can also be used to identify the crystal orientation type, a basic information about the wafer. Depending on the wafer size, they are further categorized as notch cuts or notch cuts. For wafers 200mm and larger, a V-shaped notch is cut, called a notch; for wafers smaller than 200mm, a flat cut is made, called a flat cut.

[0003] During electroplating, in a uniformly distributed circular electric field, a defect at the wafer flat will cause the electric field originally distributed in the defective flat area to concentrate at the flat, resulting in an increased current density at the flat. This leads to a thicker plating thickness at the flat, affecting the overall plating uniformity of the wafer. Utility Model Content

[0004] The technical problem to be solved by this utility model is to overcome the defect of poor uniformity in electroplating of wafers with notches in the prior art, and to provide a wafer notch shielding device and an electroplating device including the notch.

[0005] The present invention solves the above-mentioned technical problems through the following technical solution:

[0006] A wafer notch blocking device, the wafer notch blocking device comprising:

[0007] A connecting portion, one side of which is detachably connected to a wafer plating fixture, the connecting portion having a receiving hole for accommodating a wafer;

[0008] A shielding part is detachably connected to the side of the connecting part away from the wafer electroplating fixture. The shielding part is arranged along the cathode projection direction of the wafer corresponding to the notch of the wafer. The shielding part is used to shield the electric field lines at the notch of the wafer.

[0009] In this solution, by incorporating a connecting part and a shielding part, the shielding part, corresponding to the notch on the wafer cathode, blocks the electric field lines during electroplating, weakening the current distribution at that location and reducing the metal deposition rate at the notch. This results in a thinner electroplated layer at the notch, overcoming the problem of uneven thickness and poor uniformity of the electroplated layer at the notch during electroplating. The connecting part and the shielding part are detachably connected. By positioning the shielding part close to the wafer via the connecting part, compared to the shielding part being suspended above the notch, the electroplating is more uniform and yields better results. The detachable connection between the shielding part and the connecting part allows for quick selection and switching of the shape and size of the shielding part based on the varying thickness of the notch after electroplating when shielding wafers of different sizes.

[0010] Preferably, the connecting part is bonded to the wafer electroplating fixture by acid and alkali resistant adhesive.

[0011] In this solution, the above-mentioned settings enable a detachable connection between the connecting part and the wafer electroplating fixture, and the bonding process is not easily affected by the electroplating solution, thus preventing bonding failure.

[0012] Preferably, the side of the connecting portion used to connect with the wafer electroplating fixture has a plating layer, and the acid and alkali resistant adhesive is bonded to the plating layer.

[0013] In this solution, the above settings are used to achieve bonding of acid and alkali resistant adhesive to the joint.

[0014] Preferably, the coating material includes polyetheretherketone.

[0015] In this solution, the above-mentioned settings ensure that the connection can be easily disassembled while maintaining a firm bond.

[0016] Preferably, the coating thickness is in the range of 0-2 mm.

[0017] In this solution, the above-mentioned settings are used to ensure the reliability of the detachable connection between the connecting part and the wafer plating fixture.

[0018] Preferably, the connecting part is a ring structure. When the diameter of the wafer is 4 inches, the inner diameter of the connecting part is 100±10mm and the outer diameter of the connecting part is 130±10mm.

[0019] When the diameter of the wafer is 6 inches, the inner diameter of the connector is 150±10 mm and the outer diameter of the connector is 180±10 mm.

[0020] In this solution, the above-mentioned configuration allows for a detachable connection between the connector and the wafer plating fixture when the wafer diameter changes, enabling the replacement of connectors of different sizes for plating.

[0021] Preferably, the shielding part is any one of an arc-shaped structure, a wave-shaped structure, or a strip-shaped structure.

[0022] In this solution, the above settings are used to effectively shield the notches on the wafer, thereby improving the uniformity of electroplating at the notches.

[0023] Preferably, when the shielding portion is an arc-shaped structure and the diameter of the wafer is 4 inches, the arc length of the shielding portion is 30±5mm;

[0024] When the shielding part is an arc-shaped structure and the diameter of the wafer is 6 inches, the arc length of the shielding part is 60±5mm.

[0025] In this solution, the above-mentioned configuration allows for the detachable connection between the shielding part and the connecting part when the wafer diameter changes, thereby enabling the replacement of shielding parts of different sizes for electroplating.

[0026] Preferably, the shielding part has a plurality of positioning holes.

[0027] In this solution, a positioning hole is provided to move the shielding part on the connecting part, thereby aligning with the notch of the wafer along the cathode projection direction of the wafer.

[0028] An electroplating apparatus comprising a wafer notch shielding device as described above.

[0029] In this solution, when electroplating a wafer with a notch, the notch can be blocked by a wafer notch blocking device, thereby improving the electroplating uniformity of the wafer.

[0030] The significant advantages of this invention are as follows: By incorporating a connecting part and a shielding part, the shielding part, during the electroplating process, blocks the electric field lines at the wafer's cathode corresponding to the wafer's notch, weakening the current distribution at that location and reducing the metal deposition rate at the notch. This results in a thinner electroplated layer at the notch, overcoming the problem of uneven thickness and poor uniformity of the electroplated layer at the notch during electroplating. The connecting part and the shielding part are detachably connected, allowing the shielding part to be positioned close to the wafer via the connecting part. Compared to the shielding part being suspended above the wafer's notch, this results in more uniform electroplating and a better electroplating effect. The detachable connection between the shielding part and the connecting part allows for quick selection and switching of the shape and size of the shielding part based on the varying thickness of the notch after electroplating when shielding wafers of different sizes. Attached Figure Description

[0031] Figure 1 This is a schematic diagram of the wafer notch blocking device according to a preferred embodiment of the present invention.

[0032] Figure 2 This is a schematic diagram of a preferred embodiment of the present invention, showing that the shielding part has a wavy structure.

[0033] Figure 3 This is a schematic diagram of a preferred embodiment of the present invention, showing that the shielding part has an arc-shaped structure.

[0034] Explanation of reference numerals in the attached figures:

[0035] Connecting part 1

[0036] Receiving hole 11

[0037] Shielding part 2 Detailed Implementation

[0038] The present invention will be described more clearly and completely below with reference to the accompanying drawings, using a preferred embodiment.

[0039] This embodiment provides a wafer notch blocking device, the specific structure of which is as follows: Figure 1 As shown, the wafer notch blocking device includes:

[0040] Connecting part 1, one side of which is detachably connected to a wafer plating fixture (not shown in the figure), and the connecting part 1 has a receiving hole 11 for accommodating a wafer (not shown in the figure).

[0041] The shielding part 2 is detachably connected to the side of the connecting part 1 away from the wafer electroplating fixture. The shielding part 2 is set along the cathode projection direction of the wafer to correspond to the notch of the wafer. The shielding part 2 is used to shield the electric field lines at the notch of the wafer.

[0042] Specifically, the wafer plating fixture is used to hold the wafer. The wafer plating fixture has a cylindrical structure and acts as the anode during electroplating. One side of the connecting part 1 is detachably connected to the wafer plating fixture. A receiving hole 11 is provided at the axis of the connecting part 1. When the connecting part 1 is attached to the wafer plating fixture, the receiving hole 11 is used to accommodate the wafer. Specifically, the diameter of the receiving hole 11 is the same as the diameter of the wafer, allowing the wafer to be embedded within the receiving hole 11. Correspondingly, a shielding part 2 is provided on the side of the connecting part 1 facing away from the wafer plating fixture. The shielding part 2 is positioned corresponding to the notch on the wafer, and its cathode projection direction is aligned with that of the wafer. The shielding part 2 is used to shield the electric field lines at the notch on the wafer, thereby reducing the current distribution at the notch during electroplating, lowering the metal deposition rate at the notch, and thus thinning the plating layer at the notch, overcoming the problem of uneven plating thickness and poor uniformity at the notch during electroplating.

[0043] Furthermore, the connecting part 1 is detachably connected to the wafer plating fixture, and the shielding part 2 is attached to the side of the connecting part 1 facing away from the wafer plating fixture. That is, the shielding part 2 is detachably connected to the connecting part 1, allowing the shielding part 2 to be positioned close to the wafer via the connecting part 1. Compared to the shielding part 2 being suspended above the wafer notch, the plating is more uniform and the plating effect is better. The detachable connection between the shielding part 2 and the connecting part 1 allows the shape and size of the shielding part 2 to be selected and quickly switched according to the thickness of the notch after plating when shielding wafers of different sizes.

[0044] In this embodiment, the connecting part 1 is bonded to the wafer plating fixture using an acid- and alkali-resistant adhesive. Compared to adsorption or other connection methods, this method has a lower cost. The acid- and alkali-resistant adhesive can be epoxy resin, polytetrafluoroethylene (PTFE), or polyurethane adhesive, as is available in the prior art. Of course, in other embodiments, other acid- and alkali-resistant adhesives can also be used. It is understood that the acid- and alkali-resistant adhesive is applied between the wafer plating fixture and the connecting part 1 to achieve a detachable connection between the connecting part 1 and the wafer plating fixture, and the bonding is not easily affected by the plating solution, preventing bonding failure.

[0045] Furthermore, in this embodiment, the side of the connecting part 1 used for connecting to the wafer plating fixture has a plating layer (not shown in the figure), and acid and alkali resistant adhesive is bonded to the plating layer. The plating layer is used to cooperate with the acid and alkali resistant adhesive to prevent the connecting part 1 from being unable to be removed when the acid and alkali resistant adhesive is used to bond the connecting part 1 to the wafer plating fixture.

[0046] In other embodiments, the side of the connecting part 1 away from the wafer electroplating fixture is also provided with a plating layer, and the plating layer on this side is provided corresponding to the shielding part 2. The shielding part 2 is bonded to the connecting part 1 by acid and alkali resistant adhesive. The purpose is also to prevent the shielding part 2 from being unable to be removed when the acid and alkali resistant adhesive is bonded to the connecting part 1.

[0047] In this embodiment, the coating material includes polyetheretherketone (PEEK). PEEK is a material in the prior art, and in this embodiment, it is applied to the connecting part 1 to facilitate disassembly of the connecting part 1 while ensuring a firm bond using acid and alkali resistant adhesive.

[0048] In this embodiment, the coating thickness ranges from 0 to 2 mm. By limiting the coating thickness, the reliability of the detachable connection between the connecting part 1 and the wafer plating fixture is ensured.

[0049] In this embodiment, the connecting part 1 is a ring structure. When the diameter of the wafer is 4 inches, the inner diameter of the connecting part 1 is 100±10mm and the outer diameter of the connecting part 1 is 130±10mm.

[0050] Specifically, the inner diameter of the annular structure, i.e., the diameter of the receiving hole 11, is 100mm, and the outer diameter of the annular structure is 130mm, thereby effectively accommodating a 4-inch diameter wafer. Furthermore, during electroplating, the wafer is positioned. Since the wafer diameter may vary during actual processing, the inner and outer diameters of the annular structure also need to be adjusted accordingly. However, to ensure positioning and electroplating results, an adjustment range of ±10mm is preferred.

[0051] In other embodiments, when the wafer diameter is 6 inches, the inner diameter of the connector 1 is 150±10 mm, and the outer diameter of the connector 1 is 180±10 mm. This achieves effective accommodation for 6-inch diameter wafers. It is understood that the connector 1 is bonded to the wafer plating fixture, allowing for quick replacement of connector 1 of different sizes for plating wafers of different sizes, thus broadening its applicability.

[0052] like Figure 3 As shown, in this embodiment, the shielding part 2 has an arc-shaped structure, which corresponds to the shape of the notch on the wafer. Tests conducted using existing electroplating methods revealed that, compared to not having the shielding part 2, adding the shielding part 2 significantly reduces the electroplating thickness at the notch. It should be noted that both the electroplating method and the testing method are existing technologies, and this embodiment has not improved upon them; therefore, they will not be elaborated upon further here.

[0053] like Figure 2 As shown, in other embodiments, the shielding part 2 has a wavy structure. One end of the wavy structure protrudes from the wall of the receiving hole 11 toward the axis of the receiving hole 11, so as to form a wavy structure profile corresponding to the notch of the wafer along the cathode projection direction of the wafer.

[0054] In another embodiment, the shielding part 2 is a strip-shaped structure. One end of the strip-shaped structure protrudes from the wall of the receiving hole 11 toward the axis of the receiving hole 11, forming a strip-shaped structure profile along the cathode projection direction of the wafer to correspond to the wafer notch. Its purpose is to shield wafer notches of different sizes. Based on the bonding of the shielding part 2 and the connecting part 1, rapid replacement is achieved, thereby effectively shielding the wafer notch and improving the uniformity of electroplating at the wafer notch.

[0055] In this embodiment, when the shielding part 2 is an arc-shaped structure and the diameter of the wafer is 4 inches, the arc length of the shielding part 2 is 30±5mm.

[0056] Specifically, the arc length of the arc structure refers to the profile length at the notch on the wafer corresponding to the arc structure, which is 30mm, thereby effectively shielding the notch of a 4-inch diameter wafer. Since the wafer diameter may vary during actual processing, the arc length also needs to be adjusted accordingly, but to ensure the electroplating effect, the adjustment range is preferably within ±5mm.

[0057] In other embodiments, when the shielding part 2 has an arc-shaped structure and the wafer diameter is 6 inches, the arc length of the shielding part 2 is 60 mm. This effectively shields the notch of the 6-inch diameter wafer. It is understood that the shielding part 2 is bonded to the connecting part 1, allowing for quick replacement of shielding parts 2 of different sizes when electroplating wafers of different sizes, resulting in a short response time and improved electroplating efficiency.

[0058] In this embodiment, the shielding part 2 is provided with a number of positioning holes (not shown in the figure).

[0059] Specifically, the positioning hole is a round hole. By setting the positioning hole, when the blocking part 2 is bonded to the connecting part 1, the blocking part 2 is moved on the connecting part 1, and the blocking part 2 is set with the notch of the wafer corresponding to the cathode projection direction of the wafer.

[0060] This embodiment also provides an electroplating apparatus, which includes the aforementioned wafer notch shielding device. When electroplating a wafer with notches, the wafer notch shielding device can shield the notches on the wafer, thereby improving the electroplating uniformity of the wafer.

[0061] While specific embodiments of this utility model have been described above, those skilled in the art should understand that these are merely illustrative examples, and the scope of protection of this utility model is defined by the appended claims. Those skilled in the art can make various changes or modifications to these embodiments without departing from the principles and essence of this utility model, but all such changes and modifications fall within the scope of protection of this utility model.

Claims

1. A wafer notch blocking device, characterized in that, The wafer notch blocking device includes: A connecting portion, one side of which is detachably connected to a wafer plating fixture, the connecting portion having a receiving hole for accommodating a wafer; A shielding part is detachably connected to the side of the connecting part away from the wafer electroplating fixture. The shielding part is arranged along the cathode projection direction of the wafer corresponding to the notch of the wafer. The shielding part is used to shield the electric field lines at the notch of the wafer.

2. The wafer notch blocking device as described in claim 1, characterized in that, The connecting part is bonded to the wafer electroplating fixture with acid and alkali resistant adhesive.

3. The wafer notch blocking device as described in claim 2, characterized in that, The connecting part has a plating layer on the side for connecting with the wafer electroplating fixture, and the acid and alkali resistant adhesive is bonded to the plating layer.

4. The wafer notch blocking device as described in claim 3, characterized in that, The coating material includes polyetheretherketone.

5. The wafer notch blocking device as described in claim 4, characterized in that, The thickness of the coating ranges from 0 to 2 mm.

6. The wafer notch blocking device as described in claim 1, characterized in that, The connecting part is a ring structure. When the diameter of the wafer is 4 inches, the inner diameter of the connecting part is 100±10mm and the outer diameter of the connecting part is 130±10mm. When the diameter of the wafer is 6 inches, the inner diameter of the connector is 150±10 mm and the outer diameter of the connector is 180±10 mm.

7. The wafer notch blocking device as described in claim 1, characterized in that, The shielding part can be any one of an arc-shaped structure, a wave-shaped structure, or a strip-shaped structure.

8. The wafer notch blocking device as described in claim 7, characterized in that, When the shielding part is an arc-shaped structure and the diameter of the wafer is 4 inches, the arc length of the shielding part is 30±5mm; When the shielding part is an arc-shaped structure and the diameter of the wafer is 6 inches, the arc length of the shielding part is 60±5mm.

9. The wafer notch blocking device as described in claim 1 or 7, characterized in that, The shielding part has several positioning holes.

10. An electroplating apparatus, characterized in that, It includes the wafer notch blocking device as described in any one of claims 1-9.

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