Semiconductor chemical vapor deposition equipment

Abstract

The utility model provides semiconductor chemical vapor deposition equipment, which comprises a process chamber, a placing platform, a first spray head and a second spray head, the placing platform is arranged in the process chamber along the height direction of the process chamber, the top end of the placing platform is used for placing a semiconductor, and the first spray head is arranged along the height direction of the process chamber. The first nozzle is arranged above the placing platform and is used for spraying process gas to the top side of the semiconductor, the second nozzle and the placing platform are arranged at an interval along a first direction and is used for spraying process gas to the edge area of the semiconductor, and the first direction is perpendicular to the height direction of the process chamber. The second spray heads are arranged on the peripheral side of the placement platform to spray the process gas to the peripheral side edge of the semiconductor, so that the spraying coverage of the edge area of the semiconductor is better, the film thickness of the edge area of the semiconductor is equal to or close to that of the central area, and the quality of the semiconductor chemical deposition film is improved.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor technology, and in particular to a semiconductor chemical vapor deposition apparatus. Background Technology

[0002] This section provides only background information relevant to this disclosure and is not necessarily prior art.

[0003] In semiconductor manufacturing equipment, the CVD TIN (chemical vapor deposition of titanium nitride) process is achieved by injecting process gas through a nozzle within the process chamber. The density of the process gas injected into the edge region of the nozzle is lower than that in the center region. This results in a thinner titanium nitride film forming on the edge region of the semiconductor compared to the center region. Utility Model Content

[0004] The purpose of this invention is to at least solve the technical problem that the edge thickness of the thin film deposited on a semiconductor by existing semiconductor chemical vapor deposition equipment is thinner than that of the central region. This purpose is achieved through the following technical solution:

[0005] This utility model proposes a semiconductor chemical vapor deposition apparatus, comprising:

[0006] Process chambers;

[0007] A placement platform is disposed within the process chamber, and the top of the placement platform is used to place semiconductors along the height direction of the process chamber;

[0008] A first nozzle, along the height direction of the process chamber, is disposed above the placement platform and is used to spray process gas onto the top side of the semiconductor.

[0009] The second nozzle, along the first direction, is spaced apart from the placement platform and is used to spray process gas onto the edge region of the semiconductor.

[0010] Wherein, the first direction is perpendicular to the height direction of the process chamber.

[0011] The semiconductor chemical vapor deposition apparatus proposed in this invention uses a placement platform to place the semiconductor. A first nozzle is positioned above the placement platform to spray process gas onto the top side of the semiconductor, and a second nozzle is positioned around the placement platform to spray process gas onto the peripheral edges of the semiconductor. This results in better spray coverage of the semiconductor's edge areas, thereby making the film thickness in the edge areas of the semiconductor equal to or close to the film thickness in the center areas, thus improving the quality of the semiconductor chemically deposited film.

[0012] In addition, the semiconductor chemical vapor deposition apparatus according to this utility model may also have the following additional technical features:

[0013] In some embodiments of this invention, along the height direction of the process chamber, the top of the second nozzle is higher than the top of the placement platform.

[0014] In some embodiments of this invention, the second nozzle has a plurality of nozzle holes, and the spray angle of the second nozzle is configured to be radial along the first direction.

[0015] In some embodiments of this utility model, the end face of the second nozzle facing the placement platform is an arc-shaped convex surface.

[0016] In some embodiments of this invention, the second nozzle has at least one second nozzle, and the number of the second nozzle is between 1 and 1000.

[0017] In some embodiments of this invention, the diameter of the second nozzle is between 0.25 inches and 1 inch.

[0018] In some embodiments of this utility model, the semiconductor chemical vapor deposition apparatus further includes a first driving unit, which is connected to the placement platform and is used to drive the placement platform to rotate. The rotation axis of the placement platform is parallel to the height direction of the process chamber.

[0019] In some embodiments of this utility model, the first nozzle has at least three first spray holes, the three first spray holes are arranged in a circumferential array, and the placement platform is within the spray range of the three first nozzles.

[0020] In some embodiments of this utility model, the semiconductor chemical vapor deposition apparatus further includes a process gas supply system and a mass flow controller. The process gas supply system is connected to the first nozzle and the second nozzle respectively through pipelines. The mass flow controller is disposed on the pipeline connecting the process gas supply system to the first nozzle and / or the second nozzle, and is used to control the flow rate of the pipeline.

[0021] In some embodiments of this utility model, the semiconductor chemical vapor deposition apparatus further includes a second drive unit, which is connected to the second nozzle and is used to drive the second nozzle to rotate around the placement platform. The rotation axis of the second nozzle is parallel to the height direction of the process chamber. Attached Figure Description

[0022] Various other advantages and benefits will become apparent to those skilled in the art upon reading the following detailed description of preferred embodiments. The accompanying drawings are for illustrative purposes only and are not intended to limit the scope of the invention. Furthermore, the same reference numerals denote the same parts throughout the drawings. In the drawings:

[0023] Figure 1 A schematic diagram of the structure of a semiconductor chemical vapor deposition apparatus according to an embodiment of the present invention is shown.

[0024] The markings in the attached diagram are as follows:

[0025] 100. Semiconductor chemical vapor deposition equipment;

[0026] 10. Process chamber; 11. First nozzle; 12. Second nozzle; 13. Placement platform; 14. First drive unit; 15. Second drive unit; 16. Mass flow controller;

[0027] 20. Semiconductors. Detailed Implementation

[0028] Exemplary embodiments of the present disclosure will now be described in more detail with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be implemented in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.

[0029] It should be understood that the terminology used herein is for the purpose of describing particular exemplary embodiments only and is not intended to be limiting. Unless the context clearly indicates otherwise, the singular forms “a,” “an,” and “described” as used herein may also include the plural forms. The terms “comprising,” “including,” “containing,” and “having” are inclusive and therefore indicate the presence of the stated features, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, steps, operations, elements, components, and / or combinations thereof. The method steps, processes, and operations described herein are not construed as requiring them to be performed in a particular order described or illustrated unless the order of performance is explicitly indicated. It should also be understood that additional or alternative steps may be used.

[0030] Although terms such as first, second, third, etc., may be used in this document to describe multiple elements, components, regions, layers, and / or segments, these elements, components, regions, layers, and / or segments should not be limited by these terms. These terms may be used only to distinguish one element, component, region, layer, or segment from another. Unless the context clearly indicates otherwise, terms such as "first," "second," and other numerical terms used herein do not imply order or sequence. Therefore, the first element, component, region, layer, or segment discussed below may be referred to as the second element, component, region, layer, or segment without departing from the teachings of the exemplary embodiments.

[0031] For ease of description, spatial relative terms may be used in the text to describe the relationship of one element or feature relative to another element or feature, as shown in the figure. These relative terms include, for example, "inside," "outside," "middle," "outer," "below," "below," "above," "over," etc. Such spatial relative terms are intended to include different orientations of the device in use or operation, other than those depicted in the figure. For example, if the device in the figure is flipped, an element described as "below other elements or features" or "below other elements or features" would subsequently be oriented as "above other elements or features" or "above other elements or features." Therefore, the example term "below" can include both upper and lower orientations. The device may be otherwise oriented (rotated 90 degrees or in other directions), and the spatial relative descriptors used in the text will be interpreted accordingly.

[0032] like Figure 1 As shown, Figure 1 In this invention, X represents the first direction and Y represents the height direction of the process chamber 10. The invention proposes a semiconductor chemical vapor deposition apparatus 100, including a process chamber 10, a placement platform 13, a first nozzle 11, and a second nozzle 12. The placement platform 13 is disposed within the process chamber 10, and its top end is used to place a semiconductor 20 along the height direction of the process chamber 10. The first nozzle 11 is disposed above the placement platform 13 along the height direction of the process chamber 10 and is used to spray process gas onto the top end of the semiconductor 20. The second nozzle 12 is spaced apart along the periphery of the placement platform 13 along the first direction and is used to spray process gas onto the edge region of the top end of the semiconductor 20. The first direction is perpendicular to the height direction of the placement platform 13.

[0033] As can be seen, the semiconductor chemical vapor deposition apparatus 100 proposed in this utility model places the semiconductor 20 on a placement platform 13, with a first nozzle 11 positioned above the placement platform 13 to spray process gas onto the top side of the semiconductor 20, and a second nozzle 12 positioned on the periphery of the placement platform 13 to spray process gas onto the periphery edge of the semiconductor 20. This results in better spray coverage of the edge region of the semiconductor 20, thereby making the film thickness of the edge region of the semiconductor 20 equal to or close to the film thickness of the central region, thus improving the quality of the chemically deposited film of the semiconductor 20.

[0034] It is understood that the process chamber 10 is sealed and forms a space for chemical deposition of the semiconductor 20. The placement platform 13, the first nozzle 11, and the second nozzle 12 are located within the process chamber 10. The placement platform 13 can be cylindrical or prismatic, and its top can be provided with a placement surface for placing the semiconductor 20. In the height direction of the process chamber, the first nozzle 11 is positioned opposite the placement surface, and its spray direction is towards the top of the semiconductor 20, covering most or all of the top of the semiconductor 20. The second nozzle 12 is located around the semiconductor 20, and its spray direction is towards the edge of the top of the semiconductor 20, covering a portion of the edge of the top of the semiconductor 20. To ensure that the entire top of the semiconductor 20 is covered by the spray, the second nozzle 12 can be configured to rotate around the semiconductor 20, rotating around the semiconductor 20 placed on the placement platform 13 during rotation, thereby covering the entire edge of the semiconductor 20 with the spray range. Meanwhile, the first nozzle 11 and the placement nozzle can also be configured as rotatable structures, which makes the chemical vapor deposition process more efficient. Specifically, the specific structures of the process chamber, placement platform 13, first nozzle 11, second nozzle 12, and equipment for providing process gas or liquid for chemical vapor deposition can be set with reference to existing solutions.

[0035] In some embodiments of this utility model, along the height direction of the process chamber 10, the top of the second nozzle 12 is higher than the top of the placement platform 13.

[0036] As can be seen, by setting the second nozzle 12 higher than the top of the placement platform 13, the chemical process gas or liquid ejected by the second nozzle 12 can be sprayed onto the semiconductor 20 located at the top of the placement platform 13, thereby increasing the spray coverage of the second nozzle 12.

[0037] Understandably, the nozzle position on the second nozzle 12 is also higher than the top of the placement platform 13. Furthermore, the second nozzle 12 can be configured to be height-adjustable, allowing its height to be adjusted according to actual needs, providing good adaptability and operational flexibility.

[0038] In some embodiments of the present invention, the second nozzle 12 has a plurality of second nozzle holes, and the spray angle of the second nozzle 12 is configured to be radial along a first direction.

[0039] It can be seen that by setting the spray angle of the second nozzle 12 to a radial shape, the gas or liquid sprayed by the second nozzle 12 is radial, thereby increasing the spray coverage of the second nozzle 12 and thus improving the quality of the chemical vapor deposition process of the semiconductor 20.

[0040] It is understandable that the end face of the second nozzle 12 facing the placement platform 13 can be an arc-shaped convex surface or a hemispherical surface, on which multiple second nozzles are provided. The second nozzles are arranged in a circumferential array, and the axis of the array coincides with the axis of the end face, so that the spray range of the second nozzle 12 can cover more area of ​​the top side of the semiconductor 20, thereby improving the uniformity of the thin film on the top side of the semiconductor 20.

[0041] In some embodiments of this utility model, the end face of the second nozzle 12 facing the placement platform 13 is an arc-shaped convex surface.

[0042] As can be seen, by setting the end face of the second nozzle 12 as an arc-shaped convex surface, the chemical process gas ejected by the second nozzle 12 is radial, thereby expanding the spray coverage area of ​​the second nozzle 12, so that the edge of the semiconductor 20 can be sprayed and covered, and improving the uniformity of the thin film deposited on the semiconductor 20.

[0043] Understandably, the specific arc angle of the arc-shaped convex surface can be set according to actual needs.

[0044] In some embodiments of this utility model, the second nozzle 12 has at least one second nozzle, and the number of second nozzles is between 1 and 1000.

[0045] It can be seen that by setting the number of second nozzles, the number of second nozzles on the second nozzle 12 can be made appropriate, thereby improving the quality of the chemical deposition process at the edge of the semiconductor 20.

[0046] Understandably, when there is only one second nozzle on the second nozzle 12, the second nozzle needs to be aligned with the edge of the semiconductor 20. When there are multiple second nozzles, they can be arranged in a rectangular array or a circular array to achieve better spray uniformity.

[0047] In some embodiments of this invention, the diameter of the second nozzle is between 0.25 inches and 1 inch.

[0048] It is evident that by reasonably setting the diameter of the second nozzle, the chemical process gas ejected by the second nozzle 12 meets the implementation requirements of the semiconductor 20 chemical deposition process, thereby improving the quality of process implementation.

[0049] It is understandable that the diameter of the second nozzle can be set to the same value, or designed to be different values ​​according to actual needs.

[0050] In some embodiments of the present invention, the semiconductor chemical vapor deposition apparatus 100 further includes a first driving unit 14, which is connected to the placement platform 13 and is used to drive the placement platform 13 to rotate. The rotation axis of the placement platform 13 is parallel to the height direction of the process chamber 10.

[0051] As can be seen, by setting the first driving unit 14 to drive the placement platform 13 to rotate, the semiconductor 20 at the top of the placement platform 13 can rotate when the process gas is sprayed, so that the spray of the second nozzle 12 covers the entire edge area of ​​the semiconductor 20, and the first nozzle 11 sprays to cover more areas of the semiconductor 20 in a shorter time.

[0052] It is understood that the first drive unit 14 can be a motor, which is connected to a gear mechanism to drive the placement platform 13 to rotate. The first drive unit 14 can also be other drive structures, and specific examples can be found in existing rotation drive schemes for the placement platform 13.

[0053] In some embodiments of the present invention, the first nozzle 11 has at least three first nozzles arranged in a circumferential array, and the placement platform 13 is within the spray range of the three first nozzles 11.

[0054] As can be seen, by setting multiple first nozzles on the first nozzle 11, the spraying range of the first nozzle 11 is wider, covering a larger area on the top of the semiconductor 20, thereby improving the film uniformity of the edge region of the semiconductor 20.

[0055] It is understood that the first nozzle can be equally spaced around the rotation axis of the placement platform 13, so that the spray range of the first nozzle 11 is approximately circular, thereby matching the shape of the semiconductor 20 (wafer) placed on the placement platform 13, so that the spray range of the first nozzle 11 covers the top side of the semiconductor 20.

[0056] In some embodiments of the present invention, the semiconductor chemical vapor deposition apparatus 100 further includes a process gas supply system and a mass flow controller 16. The process gas supply system is connected to the first nozzle 11 and the second nozzle 12 via pipelines. The mass flow controller is installed on the pipeline connecting the process gas supply system to the first nozzle 11 and / or the second nozzle 12 and is used to control the flow rate of the pipeline.

[0057] It can be seen that by setting up a process gas supply system to provide process gas for the chemical vapor deposition of semiconductor 20, and setting up a mass flow controller 16 to control the flow rate of the process gas, parameters such as the thickness of the deposited thin film on semiconductor 20 can be precisely controlled, thereby improving the quality of chemical vapor deposition of semiconductor 20.

[0058] It is understandable that the process gas supply system and mass flow controller 16 can be implemented with reference to the structure used in the existing semiconductor chemical vapor deposition equipment 100.

[0059] In some embodiments of the present invention, the semiconductor chemical vapor deposition apparatus 100 further includes a second drive unit 15, which is connected to the second nozzle 12 and is used to drive the second nozzle 12 to rotate around the placement platform 13. The rotation axis of the second nozzle 12 is parallel to the height direction of the process chamber 10.

[0060] As can be seen, by setting the second drive unit 15 to be connected to the second nozzle 12, the second nozzle 12 is driven to rotate around the placement platform 13, so that when the second nozzle 12 rotates, the sprayed process gas can cover the entire edge area of ​​the semiconductor 20, thereby improving the thin film coverage of the edge area of ​​the semiconductor 20.

[0061] It is understood that the second drive unit 15 can be a motor. By setting a track around the placement platform 13, the second drive unit 15 drives the gear to move along the track, and the second nozzle 12 is mounted on the second drive unit 15, so that the second nozzle 12 also rotates around the placement platform 13, thereby making the spray range of the second nozzle 12 cover the entire edge area of ​​the semiconductor 20.

[0062] Specifically, when the second nozzle 12 rotates around the placement platform 13 and the placement platform 13 also rotates, the rotation direction of the second nozzle 12 is opposite to the rotation direction of the placement platform 13.

[0063] The above are merely preferred embodiments of this utility model, but the scope of protection of this utility model is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in this utility model should be included within the scope of protection of this utility model. Therefore, the scope of protection of this utility model should be determined by the scope of the claims.

Claims

1. A semiconductor chemical vapor deposition apparatus, characterized in that, include: Process chambers; A placement platform is disposed within the process chamber, and the top of the placement platform is used to place semiconductors along the height direction of the process chamber; A first nozzle, along the height direction of the process chamber, is disposed above the placement platform and is used to spray process gas onto the top side of the semiconductor. The second nozzle, along the first direction, is spaced apart from the placement platform and is used to spray process gas onto the edge region of the semiconductor. Wherein, the first direction is perpendicular to the height direction of the process chamber.

2. The semiconductor chemical vapor deposition apparatus according to claim 1, characterized in that, Along the height direction of the process chamber, the top of the second nozzle is higher than the top of the placement platform.

3. The semiconductor chemical vapor deposition apparatus according to claim 1, characterized in that, The second nozzle has a plurality of second nozzle holes, and the spray angle of the second nozzle is configured to be radial along the first direction.

4. The semiconductor chemical vapor deposition apparatus according to claim 3, characterized in that, The end face of the second nozzle facing the placement platform has an arc-shaped convex surface.

5. The semiconductor chemical vapor deposition apparatus according to claim 1, characterized in that, The second nozzle has at least one second nozzle, the number of which is between 1 and 1000.

6. The semiconductor chemical vapor deposition apparatus according to claim 5, characterized in that, The diameter of the second nozzle is between 0.25 inches and 1 inch.

7. The semiconductor chemical vapor deposition apparatus according to claim 1, characterized in that, The semiconductor chemical vapor deposition apparatus further includes a first drive unit, which is connected to the placement platform and is used to drive the placement platform to rotate. The rotation axis of the placement platform is parallel to the height direction of the process chamber.

8. The semiconductor chemical vapor deposition apparatus according to claim 7, characterized in that, The first nozzle has at least three first nozzles arranged in a circumferential array, and the placement platform is within the spray range of the three first nozzles.

9. The semiconductor chemical vapor deposition apparatus according to any one of claims 1 to 8, characterized in that, The semiconductor chemical vapor deposition apparatus further includes a process gas supply system and a mass flow controller. The process gas supply system is connected to the first nozzle and the second nozzle via pipelines. The mass flow controller is installed on the pipeline connecting the process gas supply system to the first nozzle and / or the second nozzle and is used to control the flow rate of the pipeline.

10. The semiconductor chemical vapor deposition apparatus according to any one of claims 1 to 8, characterized in that, The semiconductor chemical vapor deposition apparatus further includes a second drive unit, which is connected to the second nozzle and is used to drive the second nozzle to rotate around the placement platform. The rotation axis of the second nozzle is parallel to the height direction of the process chamber.

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