High-frequency power supply based on high-power element and boost transformer series-parallel connection technology

Abstract

The utility model discloses a high-frequency power supply based on a high-power element and boost variable series-parallel connection technology, which comprises a main circuit unit and a control circuit unit, the main circuit unit comprises a rectification circuit, a filter circuit and a resonance circuit, and the control circuit unit comprises a detection circuit, a central processor and a drive circuit. The rectification circuit and the filter circuit form a boost variable series-parallel circuit; the resonant circuit is composed of a coil panel, a resonant capacitor and an IGBT series-parallel circuit; the rectifying circuit is used for converting alternating current into direct current and then transmitting the direct current to the filtering circuit for filtering; the central processor is used for controlling on-off of the resonance circuit. The utility model provides a high-frequency power supply based on a high-power element and boost transformer series-parallel connection technology, which solves the problems of small secondary current output current and low secondary voltage, and enhances the reliability and stability of equipment.

Description

Technical Field

[0001] This utility model relates to the field of dust collector power supply technology, and in particular to a high-frequency power supply based on high-power components and boost transformer series-parallel connection technology. Background Technology

[0002] High-frequency power supplies are an important component of electrostatic precipitators, and their voltage level directly affects the dust collection efficiency within the electric field.

[0003] Traditional high-frequency power supplies suffer from problems such as low secondary voltage, high turn-off losses of IGBT devices, and poor anti-interference capabilities of controllers. In existing technologies, IGBT series-parallel circuits are limited by the capacity of a single transistor, and the controllers are bulky and difficult to maintain. Utility Model Content

[0004] This invention addresses the shortcomings of existing technologies by providing a high-frequency power supply based on high-power components and boost converter series-parallel connection technology.

[0005] To solve the above-mentioned technical problems, this utility model provides a high-frequency power supply based on high-power components and boost converter series-parallel connection technology, comprising:

[0006] The main circuit unit includes a rectifier circuit, a filter circuit, and a resonant circuit, and the control circuit unit includes a detection circuit, a central processing unit, and a drive circuit.

[0007] The rectifier circuit and the filter circuit constitute a boost converter series-parallel circuit;

[0008] The resonant circuit consists of a coil disk, a resonant capacitor, and an IGBT series-parallel circuit.

[0009] The rectifier circuit is used to convert AC power into DC power and then send it to the filter circuit for filtering.

[0010] The central processing unit is used to control the on / off state of the resonant circuit.

[0011] In the above scheme, preferably, the primary side of the transformer in the boost converter series-parallel circuit adopts the first input voltage Uin1 and the second input voltage Uin2, and the secondary side uses four sets of high-voltage rectifier diodes D1-D4, D5-D8 and D9-D12, D13-D16 to rectify the first voltage and the second voltage respectively. After filtering by the first filter capacitors C5 and C6 and the second filter capacitors C7 and C8, the total output voltage Uout is output in series.

[0012] In the above scheme, preferably, the IGBT series-parallel circuit is a series circuit composed of two groups of N IGBT parallel circuits.

[0013] In the above scheme, preferably, the emitters of the first group of N parallel IGBT circuits are connected in series with the collectors of the second group of N parallel IGBT circuits.

[0014] In the above scheme, preferably, the IGBT series-parallel circuit is a series circuit composed of two groups of four or six IGBT parallel circuits.

[0015] In the above scheme, preferably, the central processing unit consists of a main controller and an interface board, and the IGBT series-parallel circuit is connected to the central processing unit through an IGBT driver board.

[0016] In the above scheme, preferably, the main controller comprises a digital input section, a digital output section, an analog input section, a pulse drive output section, an opto-isolation section, a CPU board section, various communication interfaces and indicator sections, and a data cable interface;

[0017] Each module is vertically connected to the underlying layer.

[0018] In the above scheme, preferably, the digital input section includes an instantaneous digital input module, a DCS post-stop digital input module, a heavy gas digital input module, and a light gas digital input module.

[0019] In the above scheme, preferably, the digital output section includes an operation output module, an alarm output module, and a trip output module.

[0020] In the above scheme, preferably, the opto-isolation part includes all digital inputs, outputs, analog inputs, and pulse drive modules, which are all opto-isolated to completely isolate the high-speed main control DSP chip from external interference sources;

[0021] The CPU board consists of a storage module, a native chip and network module, and a high-speed DSP control unit;

[0022] The communication interfaces include standard MODBUS485 communication, native MODBUS TCP / IP, and Wi-Fi wireless communication;

[0023] The indicator section controller consists of power, operation, fault, and data transmission / reception indicators;

[0024] The data cable interface is mainly connected to an interface board, which includes a data cable interface, a digital input interface, a digital output interface, an analog input interface, and a pulse drive output interface.

[0025] The beneficial effects of this utility model are as follows: This utility model provides a high-frequency power supply based on high-power components and step-up transformer series-parallel technology. By performing high-voltage rectification on the secondary side of the transformer, filtering at the output end, and then connecting them in series, and simultaneously connecting them in series with the second part of the voltage, the total output voltage is achieved, meeting the requirements of a set of high current and high secondary voltage. This solves the problems of low secondary current output current and low secondary voltage, and enhances the reliability and stability of the equipment.

[0026] By paralleling high-order IGBTs, the current capacity limit of a single IGBT can be effectively improved, and by linking high-order IGBT components together, the withstand voltage limit of a single IGBT can be effectively improved, thus overcoming the limitations of IGBT circuit impedance and current.

[0027] In addition, a central processing unit for a high-frequency power supply is provided, which is connected to the IGBT driver board through an optical fiber interface to realize high-frequency power supply triggering and driving, solving the technical problems of existing power controllers being inconvenient to disassemble and install and difficult to maintain. Attached Figure Description

[0028] Figure 1 This is a schematic diagram of the high-frequency power supply circuit structure of this utility model.

[0029] Figure 2 This is a schematic diagram of the step-up transformer series-parallel circuit structure of this utility model.

[0030] Figure 3 This is a schematic diagram of the IGBT series-parallel circuit structure of this utility model.

[0031] Figure 4 This is a schematic diagram of the main controller of this utility model.

[0032] Figure 5 This is a schematic diagram of the interface board of this utility model. Detailed Implementation

[0033] The present invention will now be described in further detail with reference to the accompanying drawings and specific embodiments: See below Figures 1-5 .

[0034] A high-frequency power supply based on high-power components and boost converter series-parallel technology includes a main circuit unit and a control circuit unit. The main circuit unit includes a rectifier circuit, a filter circuit, and a resonant circuit. The control circuit unit includes a detection circuit, a central processing unit, and a drive circuit.

[0035] The rectifier circuit converts AC power into DC power, which is then sent to the filter circuit for filtering. The rectifier circuit and the filter circuit constitute a boost converter series-parallel circuit. The primary side of the transformer in the boost converter series-parallel circuit uses a first input voltage Uin1 and a second input voltage Uin2. The secondary side uses four sets of high-voltage rectifier diodes D1-D4, D5-D8 and D9-D12, D13-D16 to rectify the first voltage and the second voltage, respectively. The first filter capacitors C3 and C4 and the second filter capacitors C5 and C6 are filtered and then connected in series to output the total voltage Uout.

[0036] like Figure 2 As shown, the primary side's first input voltage Uin1 is located on the upper left, and the secondary side is on the right. It is rectified by two sets of high-voltage rectifier diodes D1-D4 and D5-D8. The primary side's second input voltage Uin2 is located on the lower left, and the secondary side is on the right. It is rectified by two sets of high-voltage rectifier diodes D9-D12 and D13-D16. After filtering by the first filter capacitors C3 and C4 and the second filter capacitors C5 and C6, the total output voltage Uout is output in series. This achieves the requirements of high output current and high secondary voltage, solves the problems of low secondary current output current and low secondary voltage, enhances the reliability and stability of the equipment, and thus meets the requirements of electrostatic precipitators for 1 million kW generator sets and greenhouse dust collectors for high current and high voltage equipment.

[0037] The rectifier circuit converts the input AC power into DC power, which is then sent to the filter circuit for filtering. The filtered DC power is then sent to the resonant circuit for inversion. The detection circuit detects the electrical signal from the rectifier circuit and sends the detected signal to the central processing unit for processing. The central processing unit drives and controls the resonant circuit to switch on and off via the drive circuit.

[0038] The resonant circuit consists of a coil disk, a resonant capacitor, and an IGBT series-parallel circuit. The IGBT series-parallel circuit is a series circuit composed of two groups of N IGBT parallel circuits. The emitter E terminal of the first group of N IGBT parallel circuits is connected in series with the collector C terminal of the corresponding second group of N IGBT parallel circuits. The collector C terminal and emitter E segment of the two groups of N IGBT parallel circuits are respectively connected in parallel with dynamic voltage equalization circuits and static voltage equalization circuits, and the two groups of dynamically equalized voltage equalization circuits are connected in series.

[0039] The dynamic and static uniformity circuits are parallel circuits consisting of two absorption capacitors and one absorption resistor. The absorption capacitors are 0.022μF / 2000VDC, and the absorption resistor is 470KΩ. The drive circuit employs two sets of interlocked, two-way fiber optic drive isolation circuits. When one input signal is high, the other signal directly locks in a low voltage, preventing both output signals from simultaneously going high and thus preventing equipment damage. Preferably, the IGBT series-parallel circuit consists of a series circuit composed of two sets of four or six IGBT parallel circuits, thereby achieving the effect of non-interference between the two drives while ensuring simultaneous driving.

[0040] The IGBT is a rapidly turn-off IGBT device, comprising an N-type substrate, a P-type CHP epitaxial layer on the front side of the N-type substrate, a front emitter metal region on the front side of the P-type CHP epitaxial layer, and at least one trench region. A hole extraction region, heavily P-type doped, is located on the opposite side of the trench region from the front emitter metal region and penetrates the P-type CHP epitaxial layer. An SG region is disposed within the trench region. One end of the SG region forms a spiral with the front emitter metal region, and the other end forms a spiral with the hole extraction region. A thick oxide layer, a polysilicon gate, and a copper oxide layer are sequentially disposed on the sidewalls of the trench region on both sides of the SG region.

[0041] An N-type substrate is selected, and a P-type CHP epitaxial layer is extended on the front side of the N-type substrate. At least one trench region penetrating the P-type CHP epitaxial layer is etched. A copper oxide layer is grown on the sidewalls of the trench region and filled with a polysilicon gate or polysilicon gate. A portion of the polysilicon gate is etched to form a polysilicon opening region, and a thick oxide layer is deposited on the sidewalls of the polysilicon opening region. Photoresist is applied to the surface of the P-type CHP epitaxial layer, and a high concentration of trivalent elements is ion-implanted into the region corresponding to the thick oxide layer. After removing the photoresist, high-temperature diffusion forms a heavily doped P-type hole extraction region located on the other side of the trench region opposite to the P-type CHP epitaxial layer. Polysilicon or metal material is filled between the thick oxide layers to form an SG region. One end of the SG region forms a spiral with the hole extraction region, forming the front emitter metal region and the back electrode metal region of the IGBT device.

[0042] Through photolithography, development, and ion implantation, several N+ emitter regions and P-type heavily doped regions are formed on both sides of the trench region on the front side of the P-type CHP epitaxial layer. The P-type heavily doped regions are isolated from the trench region by the N+ emitter regions, and the side of the P-type heavily doped regions away from the front emitter metal region extends into the P-type CHP epitaxial layer. An insulating dielectric layer is deposited on the front side of the trench region, and the insulating dielectric layer is etched to form the first via opening region corresponding to the SG region, so that the SG region and the front emitter metal region form a spiral. After forming the front emitter metal region of the IGBT device, and after forming the back electrode metal region of the IGBT device, pentavalent elements are sequentially ion implanted on the back side of the N-type substrate, and trivalent elements are ion implanted and activated to form the N-type FS region and the back P-type single electrode P+ region, respectively.

[0043] A through-groove region is formed in the P-type CHP epitaxial layer on the front side of the N-type substrate. A heavily doped P-type hole extraction region is formed on the opposite side of the trench region relative to the front emitter metal region. An SG region is formed within the trench region. One end of the SG region forms a helix with the front emitter metal region, and the other end forms a helix with the hole extraction region. This allows the number of holes injected from the back side to be rapidly extracted through the N+ region, via the hole extraction region, SG region, and front emitter metal region. Compared to traditional hole outflow paths, this path is shorter and has lower resistance, effectively reducing device turn-off time and turn-off losses. It also avoids tail current, making this IGBT device suitable for high-frequency applications.

[0044] An insulating dielectric layer is disposed between the trench region and the front-side emitter metal region, and a first orifice opening region corresponding to the SG region is disposed on the insulating dielectric layer, penetrating the insulating dielectric layer. By providing the insulating dielectric layer and the first orifice opening region corresponding to the SG region, the outflow path of hole carriers can be better limited, reducing the turn-off time and turn-off loss of the device. The SG region is arranged in a strip shape along the longitudinal direction of the trench region, and the first orifice opening region is a strip shape corresponding to the SG region. Several SG regions are disposed along the longitudinal direction of the trench region, and several first orifice opening regions corresponding to the SG regions are disposed on the insulating dielectric layer.

[0045] Between the front side of the P-type CHP epitaxial layer and the front emitter metal region, several N+ emitter regions and heavily doped P-type regions are located on both sides of the trench region. The heavily doped P-type regions are isolated from the trench region by the N+ emitter regions, and the side of the heavily doped P-type regions away from the front emitter metal region extends into the P-type CHP epitaxial layer. Both the N+ emitter regions and the heavily doped P-type regions are connected to the front emitter metal region through the second via opening region, and the thickness of the thick oxide layer is greater than the thickness of the thin oxide layer. By setting the thickness of the thick oxide layer to be greater than the thickness of the thin oxide layer, the influence of ion implantation on the polysilicon gate region can be shielded, avoiding affecting the performance of the device. The back side of the N-type substrate is sequentially provided with a back N-type FS region, a back P-type collector P+ region, and a back collector metal region, or the back side of the N-type substrate is provided with a back N-type PS region. The back side of the back N-type PS region is provided with alternating back P-type collector P+ regions and N+ regions, and the back side of the alternating back P-type collector P+ regions and N+ regions is provided with a back collector metal region.

[0046] The rapidly turn-off IGBT device utilizes a through-type booster plate on the P-type CHP epitaxial layer of the N-type substrate. A hole extraction region with a P-type connector is positioned on the side of the booster plate opposite the front emitter metal region. An SG region is located within the booster plate. One end of the SG region is in bipolar contact with the front emitter metal region, and the other end is in bipolar contact with the hole extraction region. This ensures that holes temporarily entering the device when a turn-off signal is received are able to pass through either the "N" region or the "hole extraction region." The holes are rapidly extracted from the emitter metal region via the SG region. Compared to traditional hole outflow paths, this path is shorter and has lower resistance, effectively reducing turn-off time and losses, and preventing tail current. This makes the IGBT device suitable for high-frequency applications.

[0047] The central processing unit (CPU) is used to control the on / off state of the resonant circuit. The CPU consists of a main controller and an interface board. The IGBT series-parallel circuit is connected to the CPU through an IGBT driver board. The main controller includes a digital input section, a digital output section, an analog input section, a pulse drive output section, an opto-isolation section, a CPU board section, various communication interfaces and indicator sections, and a data cable interface.

[0048] The various modules within the main controller are vertically connected to the underlying layer, thus saving a significant amount of space and achieving controller miniaturization.

[0049] The digital input section includes an instantaneous digital input module, a DCS post-stop digital input module, a heavy gas digital input module, and a light gas digital input module. Other digital input modules can be added or removed as needed.

[0050] The digital output section includes a running output module, an alarm output module, and a trip output module; the opto-isolation section ensures that all digital inputs, outputs, analog inputs, and pulse drive modules are opto-isolated, completely isolating the high-speed main control DSP chip from external interference sources; the analog input section includes a primary voltage input module, a primary current input module, a secondary voltage input module, a secondary current input module, a transformer leakage current input module, a 4-20mA input module, etc., which can be added as needed; the pulse drive output section includes a thyristor drive module, a pulse power generator drive module, and other necessary drive output modules.

[0051] The CPU board comprises a storage module, a native chip and network module, and a high-speed DSP control unit; the communication interfaces include standard MODBUS485 communication, native chip MODBUS TCP / IP, and Wi-Fi wireless communication; among them, the native network MODBUS TCP / IP can simultaneously support 4 hosts to monitor the controller.

[0052] The indicator section controller consists of power, operation, fault, and data transmission / reception indicators; the data cable interface mainly connects to the interface board, and its length is designed to be relatively short to resist interference; the interface board includes a data cable interface, a digital input interface, a digital output interface, an analog input interface, and a pulse drive output interface.

[0053] The interface board connects relevant data signals to the outside world via a data cable interface with the main controller and terminal blocks on the interface board. The pulse power generator driver module of the pulse drive module is connected to the IGBT driver board via an optical fiber interface to realize high-frequency power triggering drive.

[0054] The central processing unit uses spring sheets welded to the grounding points of the four corner tubes of the circuit board to enhance the grounding effect of the high-frequency power controller, greatly improving the anti-interference capability of the high-frequency controller and making the equipment more stable and reliable.

[0055] The above embodiments are only used to illustrate the technical solutions of this utility model, and are not intended to limit it. Although this utility model has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this utility model.

Claims

1. A high-frequency power supply based on high-power components and boost converter series-parallel connection technology, characterized in that: include The main circuit unit includes a rectifier circuit, a filter circuit, and a resonant circuit, and the control circuit unit includes a detection circuit, a central processing unit, and a drive circuit. The rectifier circuit and the filter circuit constitute a boost converter series-parallel circuit; The resonant circuit consists of a coil disk, a resonant capacitor, and an IGBT series-parallel circuit. The rectifier circuit is used to convert AC power into DC power and then send it to the filter circuit for filtering. The central processing unit is used to control the on / off state of the resonant circuit.

2. A high-frequency power supply based on high-power components and boost converter series-parallel technology according to claim 1, characterized in that: The primary side of the step-up transformer series-parallel circuit uses the first input voltage Uin1 and the second input voltage Uin2. The secondary side uses four sets of high-voltage rectifier diodes D1-D4, D5-D8 and D9-D12, D13-D16 to rectify the first voltage and the second voltage respectively. The first filter capacitors C5 and C6 and the second filter capacitors C7 and C8 are filtered and then connected in series to output the total voltage Uout.

3. A high-frequency power supply based on high-power components and boost converter series-parallel connection technology according to claim 1, characterized in that: The IGBT series-parallel circuit is a series circuit composed of two sets of N IGBT parallel circuits.

4. A high-frequency power supply based on high-power components and boost converter series-parallel connection technology according to claim 3, characterized in that: The emitters of the first group of N parallel IGBT circuits are connected in series with the collectors of the corresponding second group of N parallel IGBT circuits.

5. A high-frequency power supply based on high-power components and boost converter series-parallel connection technology according to claim 3, characterized in that: The IGBT series-parallel circuit consists of a series circuit composed of two sets of four or six IGBT parallel circuits.

6. A high-frequency power supply based on high-power components and boost converter series-parallel connection technology according to claim 1, characterized in that: The central processing unit consists of a main controller and an interface board, and the IGBT series-parallel circuit is connected to the central processing unit through an IGBT driver board.

7. A high-frequency power supply based on high-power components and boost converter series-parallel connection technology according to claim 6, characterized in that: The main controller comprises a digital input section, a digital output section, an analog input section, a pulse drive output section, an opto-isolation section, a CPU board section, various communication interfaces and indicator sections, and a data cable interface. Each module is vertically connected to the underlying layer.

8. A high-frequency power supply based on high-power components and boost converter series-parallel connection technology according to claim 7, characterized in that: The digital input section includes an instantaneous digital input module, a DCS post-stop digital input module, a heavy gas digital input module, and a light gas digital input module.

9. A high-frequency power supply based on high-power components and boost converter series-parallel connection technology according to claim 7, characterized in that: The digital output section includes an operation output module, an alarm output module, and a trip output module.

10. A high-frequency power supply based on high-power components and boost converter series-parallel connection technology according to claim 7, characterized in that: The opto-isolation section includes all digital inputs, outputs, analog inputs, and pulse drive modules, which are all opto-isolated to completely isolate the high-speed main control DSP chip from external interference sources; The CPU board consists of a storage module, a native chip and network module, and a high-speed DSP control unit; The communication interfaces include standard MODBUS485 communication, native MODBUS TCP / IP, and Wi-Fi wireless communication; The indicator section controller consists of power, operation, fault, and data transmission / reception indicators; The data cable interface is mainly connected to an interface board, which includes a data cable interface, a digital input interface, a digital output interface, an analog input interface, and a pulse drive output interface.

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