Silicon controlled rectifier gate pole structure
By employing a combination design of gate cover, plug, and insert in the thyristor gate structure to form a cavity and then welding it with an interference fit, the sealing problem is solved, thereby improving the sealing performance of the thyristor gate and the product qualification rate.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-05-06
- Publication Date
- 2026-04-10
AI Technical Summary
The existing thyristor gate structure has poor sealing performance, which causes the gate lead to get stuck on the gate rod, making it prone to air leakage under long-term operating conditions and resulting in a low product qualification rate.
The gate assembly adopts a structural design including a gate tube cover, a gate plug, a gate insert, and a gate rod. By forming a cavity inside the gate tube cover and achieving a tight connection through interference fit and welding, internal stress is reduced and sealing is improved.
The sealing performance of the thyristor gate structure has been enhanced, reducing the probability of air leakage and improving the reliability and pass rate of the product.
Smart Images
Figure CN224111626U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to a silicon controlled rectifier gate structure, especially a silicon controlled rectifier gate structure with good sealing performance. BACKGROUND
[0002] The GT0 gate structure has a relatively large trigger current, so that the gate lead is also relatively thick, about 1-1.5 mm, and the traditional design is that the gate lead is welded on a Kovar rod, the Kovar rod is welded with the gate hole of the ceramic ring, and the Kovar rod protrudes from the ceramic ring, so that the gate outer lead is clamped on the gate rod during device assembly. This design is prone to cause gas leakage near the gate rod under long-term working conditions, and the product qualified rate is not high. Therefore, there is an urgent need to provide a silicon controlled rectifier gate structure with good sealing performance. SUMMARY
[0003] The utility model solves the technical problem of providing a silicon controlled rectifier gate structure with good sealing performance.
[0004] To solve the above technical problems, the technical scheme of the utility model is as follows: a silicon controlled rectifier gate structure, which is characterized by comprising a ceramic ring, a gate assembly welded at a preset gate hole position of the ceramic ring, and a gate rod connected with the gate assembly inside the ceramic ring, wherein a cavity is arranged on the gate assembly.
[0005] Preferably, the gate assembly comprises a gate tube cover passing through the gate hole, a gate plug connected with the gate tube cover, and a gate insert connected with the gate plug, the gate rod is connected with the gate tube cover, the gate tube cover is welded on the gate hole, and a chamber with an opening towards the outside of the ceramic ring is arranged on the gate tube cover.
[0006] The gate insert is provided with an insert hole for the gate plug to pass through, the gate plug is embedded and welded on the opening side of the chamber, and the chamber forms the cavity after the gate plug is embedded.
[0007] Preferably, the opening side of the chamber on the gate plug and the gate tube cover is in interference fit or transition fit.
[0008] Preferably, the gate tube cover and the gate hole are in interference fit or transition fit.
[0009] Preferably, the gate plug and the insert hole on the gate insert are in interference fit or transition fit.
[0010] Preferably, the gate plug is welded on the gate insert.
[0011] Preferably, the gate plug is L-shaped, comprising a vertical part connected with the gate plug and a horizontal part arranged horizontally, and the horizontal part is a gate outer lead connected with other parts.
[0012] Preferably, a gate connecting piece is arranged between the gate rod and the gate tube cover to connect them, and the gate connecting piece is welded with the gate rod and the gate tube cover respectively.
[0013] Preferably, the gate rod is arranged perpendicularly with the gate connecting piece, the gate connecting piece is provided with a positioning pit for quick positioning of the gate tube cover, the gate tube cover is provided with a protruding part extending into the positioning pit, and the length direction of the gate rod is parallel with the central axis of the gate tube cover.
[0014] The gate plug is used to block the gate tube cover, and a cavity is formed in the gate tube cover, so that when the gate tube cover and the gate hole of the ceramic ring are welded, the inner gas expands to make the outer wall of the gate tube cover and the inner wall of the gate hole of the ceramic ring in a tight fit state, so that the welding is more firm, and the gate tube cover reduces the internal stress through the gate connecting piece, and the probability of air leakage is also reduced. BRIEF DESCRIPTION OF DRAWINGS
[0015] The utility model will be described further in detail in connection with the drawings and specific embodiments.
[0016] Figure 1 It is a structure schematic view of a silicon controlled rectifier gate structure.
[0017] Figure 2 It is a structure schematic view of a gate tube cover in a silicon controlled rectifier gate structure.
[0018] In the figure: 1-ceramic ring, 2-gate rod, 3-cavity, 4-gate tube cover, 5-gate plug, 6-gate plug, 7-gate connecting piece, 8-protruding part. PREFERRED EMBODIMENT
[0019] The silicon controlled rectifier gate structure comprises a ceramic ring 1, a gate assembly welded at a preset gate hole position of the ceramic ring 1, a gate rod 2 arranged in the ceramic ring 1 and connected with the gate assembly, and a cavity 3 arranged on the gate assembly. The gate plug 5 is used to block the gate tube cover 4, and the cavity 3 is formed in the gate tube cover 4, so that when the gate tube cover 4 and the gate hole of the ceramic ring 1 are welded, the inner gas expands to make the outer wall of the gate tube cover 4 and the inner wall of the gate hole of the ceramic ring 1 in a tight fit state, so that the welding is more firm, and the gate tube cover 4 reduces the internal stress through the gate connecting piece 7, and the probability of air leakage is also reduced.
[0020] The gate pole assembly includes a gate pole sleeve 4 passing through the gate pole hole, a gate pole plug 5 connected with the gate pole sleeve 4, a gate pole insert 6 connected with the gate pole plug 5, and a gate pole 2 connected with the gate pole sleeve 4. The gate pole sleeve 4 is welded on the gate pole hole, and a chamber with an opening facing the outside of the ceramic ring 1 is arranged on the gate pole sleeve 4. The gate pole insert 6 is provided with an insert hole for the gate pole plug 5 to pass through, the gate pole plug 5 is embedded and welded on the opening side of the chamber, and the chamber forms a cavity 3 after the gate pole plug 5 is embedded. The opening side of the chamber on the gate pole plug 5 and the gate pole sleeve 4 is in interference fit or transition fit. The gate pole sleeve 4 is in interference fit or transition fit with the gate pole hole. The gate pole plug 5 is in interference fit or transition fit with the insert hole on the gate pole insert 6. The gate pole plug 5 is welded on the gate pole insert 6. The gate pole insert 6 is L-shaped, including a vertical part connected with the gate pole plug 5 and a horizontal part arranged horizontally, and the horizontal part is a gate outer lead connected with other parts. The gate pole plug 5 is welded in the insert hole, and then inserted into the gate pole sleeve 4 and welded, so as to ensure that there is space in the cavity of the gate pole sleeve 4. The gate pole assembly is welded with the gate pole hole of the ceramic ring 1, and the gate pole 2 is welded with the gate pole sleeve 4 through the connecting piece.
[0021] The gate pole assembly includes a gate pole sleeve 4 passing through the gate pole hole, a gate pole plug 5 connected with the gate pole sleeve 4, a gate pole insert 6 connected with the gate pole plug 5, and a gate pole 2 connected with the gate pole sleeve 4. The gate pole sleeve 4 is welded on the gate pole hole, and a chamber with an opening facing the outside of the ceramic ring 1 is arranged on the gate pole sleeve 4. The gate pole insert 6 is provided with an insert hole for the gate pole plug 5 to pass through, the gate pole plug 5 is embedded and welded on the opening side of the chamber, and the chamber forms a cavity 3 after the gate pole plug 5 is embedded. The opening side of the chamber on the gate pole plug 5 and the gate pole sleeve 4 is in interference fit or transition fit. The gate pole sleeve 4 is in interference fit or transition fit with the gate pole hole. The gate pole plug 5 is in interference fit or transition fit with the insert hole on the gate pole insert 6. The gate pole plug 5 is welded on the gate pole insert 6. The gate pole insert 6 is L-shaped, including a vertical part connected with the gate pole plug 5 and a horizontal part arranged horizontally, and the horizontal part is a gate outer lead connected with other parts. The gate pole plug 5 is welded in the insert hole, and then inserted into the gate pole sleeve 4 and welded, so as to ensure that there is space in the cavity of the gate pole sleeve 4. The gate pole assembly is welded with the gate pole hole of the ceramic ring 1, and the gate pole 2 is welded with the gate pole sleeve 4 through the connecting piece.
[0022] In order to facilitate the quick assembly of the gate pole sleeve 4 and the gate pole connecting piece 7, the gate pole 2 and the gate pole connecting piece 7 are arranged vertically, the gate pole connecting piece 7 is provided with a positioning pit for quick positioning of the gate pole sleeve 4, and the gate pole sleeve 4 is provided with a protruding part 8 extending into the positioning pit. The length direction of the gate pole 2 and the central axis of the gate pole sleeve 4 are parallel.
[0023] The above embodiments are only descriptions for clearly illustrating the present application, and are not limitations on the embodiments. For those skilled in the art, other different forms of changes or variations can be made on the basis of the above description, and all the embodiments do not need to be exhausted, and the obvious changes or variations still fall within the protection scope of the present application.
Claims
1. A silicon controlled rectifier gate structure, characterized by: The controllable silicon gate structure comprises a ceramic ring, a gate assembly welded on the ceramic ring at a preset gate hole position, and a gate rod connected with the gate assembly inside the ceramic ring.
2. A silicon controlled rectifier gate structure as defined in claim 1, wherein: The gate assembly comprises a gate tube cover passing through the gate hole, a gate plug connected with the gate tube cover, and a gate insert connected with the gate plug. The gate rod is connected with the gate tube cover, the gate tube cover is welded on the gate hole, and the gate tube cover is provided with a cavity with an opening facing the outside of the ceramic ring.
3. A silicon controlled rectifier gate structure as defined in claim 2, wherein: The gate insert is provided with an insert hole for the gate plug to pass through, the gate plug is embedded and welded on the opening side of the cavity, and the cavity forms the cavity after the gate plug is embedded.
4. A silicon controlled rectifier gate structure as defined in claim 2, wherein: The opening side of the cavity on the gate plug and the gate tube cover is interference fit or transition fit.
5. A silicon controlled rectifier gate structure as defined in claim 2, wherein: the gate electrode is formed of a material having a work function greater than that of the emitter electrode. The gate tube cover is interference fit or transition fit with the gate hole. 6. A silicon controlled rectifier gate structure as defined in claim 5, wherein: The gate plug is interference fit or transition fit with the insert hole on the gate insert.
7. A silicon controlled rectifier gate structure as defined in claim 6, wherein: The gate plug is welded on the gate insert.
8. A silicon controlled rectifier gate structure as defined in claim 2, wherein: The gate insert is L-shaped, comprising a vertical part connected with the gate plug and a horizontal part arranged horizontally, and the horizontal part is a gate outer lead connected with other parts.
9. A silicon controlled rectifier gate structure as defined in claim 8, wherein: The gate rod and the gate tube cover are provided with a gate connecting piece connecting the two, and the gate connecting piece is welded with the gate rod and the gate tube cover respectively. The gate rod is vertically arranged with the gate connecting piece, the gate connecting piece is provided with a positioning pit for quick positioning of the gate tube cover, the gate tube cover is provided with a protruding part extending into the positioning pit, and the length direction of the gate rod is parallel to the central axis of the gate tube cover.