Device for increasing secondary magnetic field of magnetron sputtering coating equipment
By introducing a secondary magnetic field unit into the magnetron sputtering equipment, the plasma distribution and motion trajectory are optimized, which solves the problems of low target utilization and poor coating uniformity caused by magnetic field inhomogeneity, thereby improving target utilization and extending target life.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- ANHUI HUAYUAN EQUIP TECH CO LTD
- Filing Date
- 2025-05-13
- Publication Date
- 2026-04-17
AI Technical Summary
The uneven magnetic field distribution in traditional magnetron sputtering equipment leads to problems such as low target utilization, poor coating uniformity, and shortened target life.
By introducing a secondary magnetic field unit into the magnetron sputtering equipment, the plasma distribution and motion trajectory are optimized through the coupling of the main magnetic field and the secondary magnetic field, the etching area on the target surface is expanded, forming multiple ring-shaped tracks and improving the target utilization rate.
This achieves a target utilization rate of over 80%, more uniform etching on the target surface, extended target life, and improved coating uniformity.
Smart Images

Figure CN224133158U_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of magnetron sputtering equipment technology, and in particular to a device for increasing the secondary magnetic field in magnetron sputtering coating equipment. Background Technology
[0002] In traditional magnetron sputtering equipment, the magnetic field is typically a ring-shaped or racetrack-shaped field. Due to the uneven distribution of the magnetic field, only localized areas of the target surface are efficiently etched, such as the center of the racetrack. This results in a target utilization rate that is usually less than 75%, leading to material waste. The uneven magnetic field distribution also causes plasma to concentrate in specific areas of the target, resulting in rapid localized consumption of the target and the formation of "erosion grooves," which shortens the target's lifespan. Furthermore, the uneven magnetic field distribution affects the plasma density distribution, thus impacting the uniformity of the coating. Summary of the Invention
[0003] In view of this, the purpose of this invention is to provide a device for increasing the secondary magnetic field in magnetron sputtering coating equipment, in order to solve the technical problem of uneven magnetic field distribution in traditional magnetron sputtering equipment.
[0004] To achieve the above objectives, the present invention provides a device for increasing a secondary magnetic field in a magnetron sputtering coating equipment, comprising a magnetic field fixing block disposed inside a magnetron sputtering target, a magnetic field adjusting block disposed on the magnetic field fixing block by adjusting bolts, a main magnetic field unit and a secondary magnetic field unit disposed on the magnetic field adjusting block; the main magnetic field unit includes a first magnet and a second magnet disposed on the magnetic field adjusting block, and the secondary magnetic field unit includes a second magnet and a third magnet disposed on the magnetic field adjusting block; the magnetic pole directions of the first magnet and the third magnet are the same, and the magnetic pole direction of the second magnet is opposite to the magnetic pole directions of the first magnet and the third magnet.
[0005] As a further improvement of this application, the first magnet and the second magnet are located on the same horizontal plane, and the horizontal height of the third magnet is higher than that of the first magnet.
[0006] As a further improvement of this application, the first magnet, the second magnet and the third magnet constitute a main and secondary magnetic field group, and the two main and secondary magnetic field groups are symmetrically arranged to form a main and secondary magnetic field unit. The device for increasing the secondary magnetic field in the magnetron sputtering coating equipment includes a main and secondary magnetic field unit.
[0007] As a further improvement of this application, the device for increasing the secondary magnetic field in the magnetron sputtering coating equipment includes multiple sets of main and secondary magnetic field units, arranged in parallel on the magnetic field fixing block inside the target material.
[0008] As a further improvement of this application, the device for increasing the secondary magnetic field in the magnetron sputtering coating equipment further includes a cooling component, which is disposed on the magnetic field fixing block to cool the target material.
[0009] As a further improvement to this application, the main magnetic field unit and the secondary magnetic field unit are arranged adjacent to each other and in opposite directions.
[0010] The beneficial effects of this invention are as follows: By introducing a secondary magnetic field unit 4 into the main magnetic field unit 3, the distribution and trajectory of the plasma are altered, resulting in a more uniform and extensive etching area on the target surface. This reduces the diagonal effect of the target during sputtering, thereby improving the utilization rate of the target. Simultaneously, the introduction of the secondary magnetic field unit expands the etching area on the target surface, extending it from a traditional single annular track to a multi-ring annular track, increasing the actual sputtering area of the target. By increasing the coupling between the secondary magnetic field and the main magnetic field, the effective sputtering area on the target surface is expanded, achieving uniform target erosion and increasing the target utilization rate to over 80%. Attached Figure Description
[0011] To more clearly illustrate the technical solutions in this invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only for this invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0012] Figure 1 This is a schematic cross-sectional view of a device for increasing a secondary magnetic field in a magnetron sputtering coating equipment according to an embodiment of the present invention.
[0013] Figure 2 This is a side view of a device for increasing a secondary magnetic field in a magnetron sputtering coating equipment according to an embodiment of the present invention;
[0014] Figure 3 This is a schematic diagram of the magnet pole distribution structure of the main magnetic field unit and the secondary magnetic field unit of a device for increasing the secondary magnetic field in a magnetron sputtering coating equipment according to an embodiment of the present invention.
[0015] Figure 4 This is a schematic diagram of the magnetic field distribution structure of the main magnetic field unit and the secondary magnetic field unit of a device for increasing the secondary magnetic field in a magnetron sputtering coating equipment according to an embodiment of the present invention.
[0016] The diagram is marked as follows:
[0017] 1. Magnetic field fixing block; 2. Magnetic field adjusting block; 3. Main magnetic field unit; 4. Secondary magnetic field unit; 5. First magnet; 6. Second magnet; 7. Third magnet; 8. Cooling assembly. Detailed Implementation
[0018] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to specific embodiments.
[0019] It should be noted that, unless otherwise defined, the technical or scientific terms used in this invention should have the ordinary meaning understood by one of ordinary skill in the art to which this invention pertains. The terms "first," "second," and similar terms used in this invention do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Terms such as "comprising" or "including" mean that the element or object preceding the word encompasses the elements or objects listed following the word and their equivalents, without excluding other elements or objects. Terms such as "connected" or "linked" are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. Terms such as "upper," "lower," "left," and "right" are used only to indicate relative positional relationships; when the absolute position of the described object changes, the relative positional relationship may also change accordingly.
[0020] like Figure 1-4 As shown, a device for increasing a secondary magnetic field in a magnetron sputtering coating equipment includes a magnetic field fixing block 1 disposed inside a magnetron sputtering target, a magnetic field adjusting block 2 disposed on the magnetic field fixing block 1 by adjusting bolts, a main magnetic field unit 3 and a secondary magnetic field unit 4 disposed on the magnetic field adjusting block 2; the main magnetic field unit 3 includes a first magnet 5 and a second magnet 6 disposed on the magnetic field adjusting block 2.
[0021] like Figure 1 As shown, the magnetic field fixing block 1 has a certain gap with the inner diameter of the target material. The magnetic field fixing block 1 is in a fixed position and will not rotate with the target material. The adjusting bolt is threaded onto the magnetic field fixing block 1 and adjusts the distance between the magnetic field adjusting block 2 and the target material. The magnetic field adjusting block 2 moves in the vertical direction within the magnetic field fixing block.
[0022] like Figure 4 As shown, by introducing a secondary magnetic field unit 4 on top of the main magnetic field unit 3, the distribution and trajectory of the plasma are altered, resulting in a more uniform and extensive etching area on the target surface. This reduces the diagonal effect of the target during sputtering, thereby improving the target utilization rate. Simultaneously, the introduction of the secondary magnetic field unit expands the etching area on the target surface, changing it from a traditional single annular track to a multi-ring track, increasing the actual sputtering area of the target. By increasing the coupling between the secondary and main magnetic fields, the effective sputtering area on the target surface is expanded, achieving uniform target erosion and increasing the target utilization rate to over 80%.
[0023] The auxiliary magnetic field unit 4 is provided on the second magnet 6 and the third magnet 7 on the magnetic field adjustment block 2.
[0024] To adjust the height of the main magnetic field unit 3 and the auxiliary magnetic field unit 4, the magnetic field fixing block 1 has a vertical through hole, and the adjusting bolt is disposed in the vertical through hole. Two adjusting nuts are provided on the adjusting bolt. The position of the upper end of the adjusting bolt is adjusted by adjusting the two adjusting nuts.
[0025] The magnetic field adjustment block 2 is located at the upper end of the adjustment bolt.
[0026] Specifically, the main magnetic field unit 3 is composed of a permanent magnet or an electromagnet, which generates a main magnetic field for confining electrons and increasing plasma density; the secondary magnetic field unit 4 generates a secondary magnetic field that interacts with the main magnetic field to optimize the magnetic field distribution.
[0027] like Figure 1 and Figure 3 As shown, to achieve a more uniform magnetic field distribution, the magnetic poles of the first magnet 5 and the third magnet 7 are in the same direction, while the magnetic poles of the second magnet 6 are in the opposite direction to those of the first magnet 5 and the third magnet 7. The first magnet 5 and the second magnet 6 are located on the same horizontal plane, and the horizontal height of the third magnet 7 is higher than that of the first magnet 5.
[0028] Furthermore, in order to achieve a more uniform magnetic field distribution, the first magnet 5, the second magnet 6, and the third magnet 7 constitute a main and secondary magnetic field group. The two main and secondary magnetic field groups are arranged symmetrically to form a main and secondary magnetic field unit. The device for increasing the secondary magnetic field in the magnetron sputtering coating equipment includes a main and secondary magnetic field unit.
[0029] like Figure 1 , 3 As shown in Figures 3 and 4, the main magnetic field unit 3 and the secondary magnetic field unit 4 are arranged adjacent to each other and in opposite directions.
[0030] Furthermore, in order to achieve a more uniform magnetic field distribution, the device for increasing the secondary magnetic field in the magnetron sputtering coating equipment includes multiple sets of main and secondary magnetic field units, which are arranged in parallel on the magnetic field fixing block 1 inside the target material.
[0031] To achieve cooling, the device for increasing the secondary magnetic field in the magnetron sputtering coating equipment also includes a cooling component 8, which is disposed on the magnetic field fixing block 1 to cool the target material.
[0032] Those skilled in the art should understand that the discussion of any of the above embodiments is merely exemplary and is not intended to imply that the scope of the invention (including the claims) is limited to these examples; within the framework of the invention, the technical features of the above embodiments or different embodiments can also be combined, the steps can be implemented in any order, and there are many other variations of the different aspects of the invention as described above, which are not provided in the details for the sake of brevity.
[0033] This invention is intended to cover all such substitutions, modifications, and variations that fall within the broad scope of the appended claims. Therefore, any omissions, modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this invention should be included within the scope of protection of this invention.
Claims
1. A device for increasing a secondary magnetic field in a magnetron sputtering coating equipment, characterized in that, It includes a magnetic field fixing block (1) set inside the magnetron sputtering target, a magnetic field adjusting block (2) set on the magnetic field fixing block (1) by adjusting bolts, a main magnetic field unit (3) and a secondary magnetic field unit (4) set on the magnetic field adjusting block (2); The main magnetic field unit (3) includes a first magnet (5) and a second magnet (6) disposed on the magnetic field adjustment block (2); The secondary magnetic field unit (4) is provided with a second magnet (6) and a third magnet (7) on the magnetic field adjustment block (2); The first magnet (5) and the third magnet (7) have the same magnetic pole direction, and the second magnet (6) has the opposite magnetic pole direction to the first magnet (5) and the third magnet (7).
2. The device for increasing the auxiliary magnetic field of a magnetron sputtering coating facility according to claim 1, characterized in that, The first magnet (5) and the second magnet (6) are located on the same horizontal plane, and the third magnet (7) is at a higher horizontal height than the first magnet (5).
3. The device for increasing the auxiliary magnetic field of a magnetron sputtering coating facility according to claim 1, characterized in that, The first magnet (5), the second magnet (6) and the third magnet (7) constitute a main and secondary magnetic field group. The two main and secondary magnetic field groups are arranged symmetrically to form a main and secondary magnetic field unit. The device for increasing the secondary magnetic field in the magnetron sputtering coating equipment includes a main and secondary magnetic field unit.
4. The device for increasing the auxiliary magnetic field of a magnetron sputtering coating facility according to claim 3, characterized in that, The device for increasing the secondary magnetic field in the magnetron sputtering coating equipment includes multiple sets of main and secondary magnetic field units, which are arranged in parallel on the magnetic field fixing block (1) inside the target material.
5. The device for increasing the auxiliary magnetic field of a magnetron sputtering coating facility according to claim 1, characterized in that, The device for increasing the secondary magnetic field in the magnetron sputtering coating equipment also includes a cooling component (8), which is disposed on the magnetic field fixing block (1) to cool the target material.
6. The device for increasing the auxiliary magnetic field of a magnetron sputtering coating facility according to claim 1, characterized in that, The main magnetic field unit (3) and the secondary magnetic field unit (4) are arranged adjacent to each other and in opposite directions.