SiC CVD coating gasification reaction device
By introducing an MTS feed pipe, an argon gas inlet pipe, and a sensor assembly into the SiC CVD coating vaporization reactor, combined with a conical chassis design, the problems of poor tail gas treatment and uneven temperature distribution were solved, thereby improving the stability of the reaction and the quality of the coating.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- 吉盛微(武汉)新材料科技有限公司
- Filing Date
- 2025-05-09
- Publication Date
- 2026-04-17
AI Technical Summary
In existing SiC CVD coating gasification reactors, poor tail gas treatment leads to back pressure affecting the reaction, uneven temperature distribution affects efficiency, and inaccurate cooling water temperature control results in uncontrollable gas volume carried by bubbling, making it difficult to clean the accumulated precipitates inside the device.
It adopts components such as MTS feed pipe, argon gas inlet pipe, flow control valve, pressure sensor and temperature sensor. It directly heats through heating belt and monitors temperature and pressure in real time. Argon gas is used to remove residues. Combined with the conical chassis design, it facilitates the discharge of impurities and achieves gas quantity control and reaction environment stability.
It enables real-time monitoring and control of reaction temperature and pressure, avoids residue accumulation, improves reaction efficiency and coating quality, and reduces cleaning downtime.
Smart Images
Figure CN224133166U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of materials science and technology, and in particular to a SiC CVD coating gasification reaction device. Background Technology
[0002] Semiconductor integrated circuit manufacturing processes are complex, with photolithography, etching, and thin film deposition being the three core steps. Silicon carbide material coating is an essential raw material in chip manufacturing and a crucial technology with complex operating procedures. Therefore, the quality of material coating equipment and its auxiliary parameters directly determine the performance of the final device.
[0003] To better cover the material coatings of semiconductor integrated circuits, a coating vaporization reaction device has been developed. Using gaseous silicon and carbon sources, under specific reaction conditions of high temperature and high pressure, the gaseous substances undergo a chemical reaction, depositing a uniform and dense SiC coating on the surface of the substrate material. This improves the high temperature resistance and wear resistance of the components and accelerates the coating efficiency.
[0004] Although the coating vaporization reactor can accelerate the coating speed, the exhaust gas after the reaction contains unreacted raw material gases and byproducts. Furthermore, the excessive number of bends in the exhaust gas treatment pipeline leads to poor exhaust gas discharge, creating back pressure in the reaction chamber and affecting the reaction process. Uneven distribution of heating elements within the reactor results in uneven temperature distribution, impacting reaction efficiency. Current solutions use cooling water to control the temperature and hydrogen as a carrier to bubble MTS into the chamber for reaction. However, the amount of gas carried by the bubbles is uncertain, and bubbling cannot fully utilize the MTS liquid inside the tank. Moreover, the MTS liquid at the bottom of the tank accumulates in the reactor over a long period, producing sediment that is difficult to clean. Utility Model Content
[0005] To overcome the above shortcomings, this invention provides a SiC CVD coating gasification reaction device, which aims to improve the problems in the prior art where the cooling water temperature control cannot accurately guarantee the temperature, and the gas volume cannot be determined by the bubbling method.
[0006] To achieve the above objectives, the present invention adopts the following technical solution: a SiC CVD coating gasification reaction device, comprising an outer shell and a cover, wherein a connecting pipe is fixedly connected to both the left and right sides of the front end of the cover, an MTS feed pipe is fixedly connected to the front end of the left connecting pipe, an argon gas inlet pipe is fixedly connected to the front end of the right connecting pipe, a connecting pipe is fixedly connected to the middle of the front end of the cover, an MTS outlet pipe is fixedly connected to the front end of the second connecting pipe, a flow control valve is fixedly connected to the front end of the MTS outlet pipe, a pressure sensor is fixedly connected to the top of the front end of the cover, a temperature sensor is fixedly connected to the top of the front end of the cover, an inner liner is fixedly connected to the rear end of the cover, a heating belt is fixedly connected to the outer wall of the inner liner, a chassis is fixedly connected to the rear end of the inner liner, a drain pipe is connected to the middle of the rear end of the chassis, and an exhaust pipe is connected to the front end of the drain pipe.
[0007] As a further description of the above technical solution:
[0008] The outer wall of the cover has multiple connection holes one, and the outer wall of the outer shell has multiple connection holes two.
[0009] As a further description of the above technical solution:
[0010] Each of the inner walls of the multiple connecting holes is threaded with a bolt, and each of the outer rear ends of the multiple bolts is threaded with a nut.
[0011] As a further description of the above technical solution:
[0012] The front end of the cover has two threaded grooves, and the outer wall of both the pressure sensor and the temperature sensor is fixedly connected with a bolt.
[0013] As a further description of the above technical solution:
[0014] A rubber ring is fixedly connected to the rear end of the cap, and the rubber ring adopts a ring design.
[0015] As a further description of the above technical solution:
[0016] The outer wall of the shell is fixedly connected with multiple reinforcing blocks.
[0017] As a further description of the above technical solution:
[0018] The multiple connecting holes one and multiple connecting holes two are arranged at equal intervals.
[0019] As a further description of the above technical solution:
[0020] The two connecting pipes are symmetrically distributed.
[0021] This utility model has the following beneficial effects:
[0022] In this invention, MTS gas is introduced into the device through the MTS feed pipe, and then the gas inside the device is directly heated by the heating belt. At the same time, temperature and pressure sensors can monitor the state inside the inner liner in real time. After the reaction is completed, argon gas is introduced through the argon gas inlet pipe, so that the remaining reactants in the device are discharged from the exhaust pipe and the gas outlet pipe, avoiding the accumulation of residues and impurities in the device, ensuring that subsequent reactions are not contaminated, and reducing downtime when cleaning the device. Attached Figure Description
[0023] Figure 1 This is a perspective view of a SiC CVD coating gasification reaction device proposed in this utility model;
[0024] Figure 2 This is a front view of a SiC CVD coating gasification reaction device proposed in this utility model;
[0025] Figure 3 This is a schematic diagram of the flow control valve of a SiC CVD coating gasification reaction device proposed in this utility model;
[0026] Figure 4 This is an exploded view of the drain pipe of a SiC CVD coating gasification reactor proposed in this utility model.
[0027] Figure 5 This is an exploded view of the inner liner of a SiC CVD coating gasification reactor proposed in this utility model.
[0028] Legend:
[0029] 1. Outer shell; 2. Cover; 3. MTS feed pipe; 4. Connecting pipe one; 5. Argon gas inlet pipe; 6. Connecting pipe two; 7. MTS gas outlet pipe; 8. Flow control valve; 9. Drain pipe; 10. Exhaust pipe; 11. Pressure sensor; 12. Temperature sensor; 13. Inner liner; 14. Heating belt; 15. Chassis; 16. Connecting hole one; 17. Connecting hole two; 18. Rubber ring; 19. Bolt one; 20. Threaded groove; 21. Reinforcing block; 22. Bolt two; 23. Nut. Detailed Implementation
[0030] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.
[0031] Reference Figure 1 , Figure 4 and Figure 5 This utility model provides an embodiment of a SiC CVD coating gasification reactor, comprising a shell 1 and a cover 2. Connecting pipes 4 are fixedly connected to the left and right sides of the front end of the cover 2, serving as connections. An MTS feed pipe 3 is fixedly connected to the front end of the left connecting pipe 4, allowing MTS gas to enter the inner liner 13. An argon inlet pipe 5 is fixedly connected to the front end of the right connecting pipe 4, allowing argon gas to enter the inner liner 13. A connecting pipe 6 is fixedly connected to the middle of the front end of the cover 2, connecting the cover 2 and an MTS outlet pipe 7. The MTS outlet pipe 7 is fixedly connected to the front end of the connecting pipe 6, discharging MTS waste gas. A flow control valve 8 is fixedly connected to the front end of the MTS outlet pipe 7, controlling the flow. The flow rate of MTS gas outflow, a pressure sensor 11 is fixedly connected to the top front end of the cover 2 to measure the pressure inside the device, a temperature sensor 12 is fixedly connected to the top front end of the cover 2 to measure the temperature inside the device, an inner liner 13 is fixedly connected to the rear end of the cover 2 to provide space for the gasification reaction, a heating belt 14 is fixedly connected to the outer wall of the inner liner 13 to directly heat the components inside the inner liner 13, a chassis 15 is fixedly connected to the rear end of the inner liner 13, the conical structure of the chassis 15 can reduce the accumulation of impurities inside the device, a drain pipe 9 is connected to the middle of the rear end of the chassis 15, and an exhaust pipe 10 is connected to the front end of the drain pipe 9 to discharge the dirt inside the device;
[0032] Specifically, open the valve of the argon inlet pipe 5 to introduce argon gas into the inner liner 13 of the device, venting the air inside the device and creating an inert gas environment to prevent oxidation side reactions during the reaction. After the air inside the device is fully vented, close the valve of the argon inlet pipe 5 and open the valve of the MTS feed pipe 3 to allow MTS gas to enter the inner liner 13 through the connecting pipe 4 on the left. Adjust the flow rate of the MTS feed pipe 3 according to the needs of the reaction to control the input amount of MTS gas. Start the heating belt 14 to heat the inner liner 13 until it reaches the temperature required for the chemical reaction. The temperature sensor 12 monitors the temperature inside the device in real time and adjusts the power of the heating belt 14 based on the measurement results to ensure that the reaction temperature is stable at a suitable level. Within the range, pressure sensor 11 monitors the pressure inside the device in real time. When the pressure is abnormal, corresponding measures are taken to adjust it in time. Under suitable temperature, pressure and gas atmosphere, MTS gas undergoes chemical vapor deposition reaction in the inner liner 13 to form a SiC coating on the substrate surface. The MTS waste gas generated by the reaction enters the MTS outlet pipe 7 through the connecting pipe 2 6. The flow control valve 8 is opened and the flow rate is adjusted as needed to discharge the MTS waste gas from the device. After the reaction is completed, the valve of the MTS feed pipe 3 is closed to stop the supply of MTS gas. When the temperature inside the device drops to a suitable range, argon gas is introduced again and the valve of the drain pipe 9 is opened. Due to the conical structure of the chassis 15, impurities and dirt inside the device are discharged through the drain pipe 9 and the exhaust pipe 10.
[0033] Reference Figure 1 , Figure 2 and Figure 3 The outer wall of the cover 2 has multiple connecting holes 16, and the outer wall of the outer shell 1 has multiple connecting holes 17. The multiple connecting holes 16 and multiple connecting holes 17 facilitate the connection between the cover 2 and the outer shell 1. The inner wall of each of the multiple connecting holes 16 is threaded with a bolt 22, and the rear end of each of the bolts 22 is threaded with a nut 23. The connection between the cover 2 and the outer shell 1 is reinforced by the bolts 22 and the nuts 23. A rubber ring 18 is fixedly connected to the rear end of the cover 2. The rubber ring 18 adopts a ring design and can prevent gas in the device from escaping from the connection between the cover 2 and the outer shell 1. The multiple connecting holes 16 and multiple connecting holes 17 are arranged at equal intervals.
[0034] Specifically, the cover 2 is mated with the outer shell 1, so that the multiple connection holes 16 on the outer wall of the cover 2 correspond to the multiple connection holes 17 on the outer wall of the outer shell 1. Since the multiple connection holes 16 and multiple connection holes 17 are arranged at equal intervals, this helps to accurately align the connection holes. The bolt 22 is passed through the connection holes 16 and 17 in sequence, and then the nut 23 is screwed on the rear end of the outer wall of the bolt 22. By tightening the nut 23, the bolt 22 tightly connects the cover 2 and the outer shell 1 together, thereby reinforcing the connection between the two. When the cover 2 is connected to the outer shell 1, the rubber ring 18 fits tightly against the connection between the cover 2 and the outer shell 1, forming a sealing structure, which effectively prevents gas inside the device from escaping from the connection point.
[0035] Reference Figure 1 , Figure 3 and Figure 5 The front end of the cover 2 has two threaded grooves 20. The middle of the outer wall of the pressure sensor 11 and the temperature sensor 12 are fixedly connected with bolts 19. The threaded connection between the bolts 19 and the threaded grooves 20 facilitates the fixation of the pressure sensor 11 and the temperature sensor 12. The outer wall of the outer shell 1 is fixedly connected with multiple reinforcing blocks 21. The multiple reinforcing blocks 21 can increase the stability of the outer shell 1. The two connecting pipes 4 are symmetrically distributed.
[0036] Specifically, the bolts 19, which are fixedly connected to the middle of the outer wall of the pressure sensor 11 and the temperature sensor 12, are aligned with the corresponding threaded grooves 20. Then, the pressure sensor 11 and the temperature sensor 12 are rotated so that the bolts 19 are threadedly connected to the threaded grooves 20, thereby fixing the pressure sensor 11 and the temperature sensor 12 to the cover 2. This ensures that the sensors can accurately measure the pressure and temperature inside the device. Multiple reinforcing blocks 21 are used to reinforce the connection between the outer shell 1 and the cover 2 to prevent damage to the device.
[0037] Working Principle: Opening the valve of the argon inlet pipe 5 allows argon gas to flow into the inner liner 13, gradually displacing the existing air and creating an inert gas environment. This effectively prevents oxidation side reactions between the reactant gases and oxygen in the air during subsequent reactions, providing a stable environment for SiC coating deposition. Opening the valve of the MTS feed pipe 3 allows for precise control of the amount of MTS gas entering the inner liner 13 by adjusting the flow rate, ensuring the reaction proceeds according to the preset metering and guaranteeing the quality and performance of the SiC coating. The heating belt 14, wrapped around the outer wall of the inner liner 13, transfers heat to the inner liner 13 upon startup, raising the temperature inside to the required reaction level. The temperature sensor 12 monitors the temperature inside the inner liner 13 in real time, adjusting the power of the heating belt 14 accordingly. To ensure the reaction temperature remains stable within a suitable range, pressure sensor 11 monitors the pressure inside the inner liner 13 in real time, maintaining stable pressure and providing suitable pressure conditions for the reaction. The MTS exhaust gas generated during the reaction enters the MTS outlet pipe 7 through connecting pipe 2 6. By opening the flow control valve 8 and adjusting the exhaust flow rate as needed, the exhaust gas can be discharged from the device in a timely manner, preventing it from accumulating inside the inner liner 13 and affecting the reaction and coating quality. After the reaction is completed, when the temperature inside the device drops to a suitable range, argon gas is introduced again, which helps to remove impurities and dirt from the device. Due to the conical structure of the chassis 15, impurities and dirt gather towards the drain pipe 9 under the action of gravity and air pressure. The impurities and dirt are discharged from the device through the drain pipe 9 and the exhaust pipe 10, achieving cleaning and maintenance of the device.
[0038] Finally, it should be noted that the above are merely preferred embodiments of the present utility model and are not intended to limit the present utility model. Although the present utility model has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments or make equivalent substitutions for some of the technical features. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present utility model should be included within the protection scope of the present utility model.
Claims
1. A SiC CVD coating gasification reaction apparatus comprising a housing (1) and a cover (2), characterized in that: The front end of the cap (2) is fixedly connected to both the left and right sides of the front end of the first connecting pipe (4). The front end of the first connecting pipe (4) on the left side is fixedly connected to the MTS feed pipe (3), and the front end of the first connecting pipe (4) on the right side is fixedly connected to the argon gas inlet pipe (5). The front end of the cap (2) is fixedly connected to the middle of the front end of the second connecting pipe (6). The front end of the second connecting pipe (6) is fixedly connected to the MTS outlet pipe (7), and the front end of the MTS outlet pipe (7) is fixedly connected to the flow control valve (8). A pressure sensor (11) is fixedly connected to the top front end of the cover (2), a temperature sensor (12) is fixedly connected to the top front end of the cover (2), an inner liner (13) is fixedly connected to the rear end of the cover (2), a heating belt (14) is fixedly connected to the outer wall of the inner liner (13), a chassis (15) is fixedly connected to the rear end of the inner liner (13), a drain pipe (9) is connected to the middle of the rear end of the chassis (15), and an exhaust pipe (10) is connected to the front end of the drain pipe (9).
2. The SiC CVD coating gasification reaction device according to claim 1, characterized in that: The outer wall of the cover (2) is provided with a plurality of connection holes one (16), and the outer wall of the outer shell (1) is provided with a plurality of connection holes two (17).
3. The SiC CVD coating gasification reaction device according to claim 2, characterized in that: The inner walls of the multiple connecting holes (16) are threaded with bolts (22), and the outer rear ends of the multiple bolts (22) are threaded with nuts (23).
4. The SiC CVD coating gasification reaction device according to claim 1, characterized in that: The front end of the cover (2) has two threaded grooves (20), and the outer wall of the pressure sensor (11) and temperature sensor (12) are fixedly connected with bolts (19).
5. The SiC CVD coating gasification reaction device according to claim 1, characterized in that: A rubber ring (18) is fixedly connected to the rear end of the cover (2), and the rubber ring (18) adopts a ring design.
6. The SiC CVD coating gasification reaction device according to claim 1, characterized in that: The outer wall of the outer shell (1) is fixedly connected with a plurality of reinforcing blocks (21).
7. The SiC CVD coating gasification reaction device according to claim 2, characterized in that: The multiple connecting holes one (16) and multiple connecting holes two (17) are all arranged at equal intervals.
8. The SiC CVD coating gasification reaction device according to claim 1, characterized in that: The two connecting pipes (4) are symmetrically distributed.