High-efficiency steam single-side etching silicon reaction device

Abstract

The utility model discloses a high-efficiency steam single-side etching silicon reaction device, one surface of the high-efficiency steam single-side etching silicon reaction device is provided with a plurality of acid storage tanks, the plurality of acid storage tanks are arranged in a mutually separated manner, the outer peripheries of notches of the plurality of acid storage tanks are all provided with silicon wafer limiting clamping grooves, and the outer edges of the plurality of silicon wafer limiting clamping grooves are all provided with wafer taking notches; according to the scheme, a plurality of silicon wafers with the same size can be etched at the same time, acid solutions of different types or concentrations can be independently added, personalized acid steam etching experiments can be carried out at the same time, multivariable parallel experiments are achieved, the etching efficiency is improved to be multiple times that of a traditional single-groove device, meanwhile, the operation safety is improved through the low-gravity-center design, and the device is suitable for large-scale popularization and application. In addition, due to the design of the personalized acid storage tank, the experiment efficiency of acid etching of the silicon wafer is improved, and the labor cost is reduced.

Description

Technical Field

[0001] This utility model relates to the technical field of silicon etching reaction, and in particular to a high-efficiency steam single-sided silicon etching reaction device. Background Technology

[0002] Acid vapor etching is a crucial process for controlling the surface morphology of silicon in semiconductor device manufacturing. Existing single-tank reactors often process only a single silicon wafer at a time, severely limiting the efficiency of multivariate comparative experiments. Furthermore, when the silicon wafer is placed above the acid solution using a holder, horizontal displacement is prone to occur, potentially leading to vapor leakage and creep corrosion of the wafer's surface. In addition, imbalances in the high-diameter ratio can cause tank tipping accidents, forcing researchers to compromise between efficiency, safety, and process controllability, making it a common technical challenge in microelectronic device development. Utility Model Content

[0003] The purpose of this invention is to provide a high-efficiency steam single-sided silicon etching reactor to solve the defects of existing traditional acid vapor etching devices, such as low single-tank efficiency, high operational risk, and poor process consistency.

[0004] To solve the above-mentioned technical problems, this utility model provides a high-efficiency steam single-sided etching silicon reaction device. One surface of the high-efficiency steam single-sided etching silicon reaction device is provided with multiple acid storage tanks. The multiple acid storage tanks are arranged separately from each other. A silicon wafer limiting slot is provided at the outer periphery of the opening of each of the multiple acid storage tanks. A wafer picking notch is provided at the outer edge of each of the multiple silicon wafer limiting slots.

[0005] In one embodiment, the high-efficiency steam single-sided silicon etching reactor is made of polytetrafluoroethylene.

[0006] In one embodiment, the height of the high-efficiency vapor single-sided silicon etching reactor is 35-40 mm.

[0007] In one embodiment, the plurality of acid storage tanks are independently and uniformly distributed in a 3×3 matrix, and each of the plurality of acid storage tanks is assigned an independent number.

[0008] In one embodiment, the distance between adjacent acid storage tanks is 5-8 mm.

[0009] In one embodiment, the depth of the acid storage tank is 25-30 mm.

[0010] In one embodiment, the depth of the silicon wafer limiting slot is 0.5-1 mm.

[0011] In one embodiment, the width of the notch for taking the sample is 5-8 mm.

[0012] In one embodiment, the bottom of the high-efficiency steam single-sided silicon etching reactor is provided with anti-slip texture.

[0013] In one embodiment, the inner walls of the plurality of acid storage tanks are provided with scale markings.

[0014] The beneficial effects of this utility model are as follows:

[0015] Because this invention is equipped with multiple acid storage tanks, it can not only etch multiple silicon wafers of the same size at the same time, but also independently add acid solutions of different types or concentrations, thus meeting the needs of conducting personalized acid vapor etching experiments simultaneously.

[0016] Furthermore, the silicon wafer positioning groove effectively fixes the silicon wafer directly above the vapor source, preventing displacement and acid vapor overflow; while the wafer pick-up notch design facilitates quick and efficient wafer handling. Moreover, this invention integrates multiple independent acid storage tanks and silicon wafer positioning structures, enabling multivariate parallel experiments and increasing etching efficiency many times over compared to traditional single-tank devices. Simultaneously, the low center of gravity design enhances operational safety, and the customized acid storage tank design further increases the experimental efficiency of acid etching silicon wafers while reducing labor costs. Attached Figure Description

[0017] To more clearly illustrate the technical solution of this utility model, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0018] Figure 1 This is a structural schematic diagram provided by an embodiment of the present utility model;

[0019] Figure 2 yes Figure 1 A cross-sectional structural diagram.

[0020] The attached figures are labeled as follows:

[0021] 100. High-efficiency steam single-sided silicon etching reactor;

[0022] 10. Acid storage tank;

[0023] 20. Silicon wafer positioning slot;

[0024] 30. Take the notch for the slice. Detailed Implementation

[0025] The technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention.

[0026] This invention provides a high-efficiency steam single-sided silicon etching reactor, the implementation of which is as follows: Figure 1 and Figure 2 As shown, a plurality of acid storage tanks 10 are provided on one surface of the high-efficiency steam single-sided etching silicon reactor 100. The plurality of acid storage tanks 10 are arranged separately from each other. A silicon wafer limiting slot 20 is provided at the outer periphery of the slot opening of each plurality of acid storage tanks 10. A wafer picking notch 30 is provided at the outer edge of each plurality of silicon wafer limiting slot 20.

[0027] Preferably, in this embodiment, the material of the high-efficiency steam single-sided silicon etching reactor 100 is polytetrafluoroethylene.

[0028] Preferably, in this embodiment, the height of the high-efficiency steam single-sided silicon etching reactor 100 is set to 35-40 mm.

[0029] Preferably, in this embodiment, multiple acid storage tanks 10 are independently and evenly distributed in a 3×3 matrix, and each of the multiple acid storage tanks 10 is assigned an independent number, such as 1 to 9.

[0030] Preferably, in this embodiment, the spacing between adjacent acid storage tanks 10 is set to 5-8 mm.

[0031] Preferably, in this embodiment, the depth of the acid storage tank 10 is set to 25-30mm.

[0032] Preferably, in this embodiment, the depth of the silicon wafer limiting slot 20 is set to 0.5-1mm.

[0033] Preferably, in this embodiment, the width of the notch 30 for taking the sample is set to 5-8 mm.

[0034] Preferably, in this embodiment, the bottom of the high-efficiency steam single-sided silicon etching reactor 100 is provided with anti-slip texture.

[0035] Preferably, in this embodiment, the inner walls of the multiple acid storage tanks 10 are provided with scale markings to accurately read the solution volume in each acid storage tank 10.

[0036] To facilitate understanding of the application of this utility model, two embodiments will be used for specific description below:

[0037] Example 1

[0038] First, place the high-efficiency steam single-sided silicon etching reactor 100 in a fume hood. Add 2 / 3 volume of 20% hydrofluoric acid solution to each acid storage tank 10. Then, place the silicon wafer to be etched with the silicon nitride side down in the silicon wafer retaining slot 20. After a certain period of time, the silicon nitride layer is etched. Use tweezers to pick up the silicon wafer in the wafer picking notch 30. Finally, rinse the surface of the silicon wafer with deionized water to remove residual hydrofluoric acid and silicon-fluorine reactants. The etching time is generally 10-30 minutes, and the ambient temperature is controlled at 25±2℃.

[0039] Example 2

[0040] First, place the high-efficiency steam single-sided silicon etching reactor 100 in a fume hood. Add 2 / 3 volume of 20% hydrochloric acid solution to each acid storage tank 10. Then, place the silicon wafer to be etched with the indium tin oxide (ITO) side down in the silicon wafer retaining slot 20. After a certain period of time, the ITO layer is etched. Use tweezers to pick up the silicon wafer in the wafer picking notch 30. Finally, rinse the surface of the silicon wafer with deionized water to remove residual hydrochloric acid and chlorine reactants. The etching time is generally 5-10 minutes, and the ambient temperature is controlled at 25±2℃.

[0041] The above description is the preferred embodiment of this utility model. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the principle of this utility model, and these improvements and modifications are also considered to be within the protection scope of this utility model.

Claims

1. A high-efficiency steam single-sided silicon etching reactor, characterized in that, The high-efficiency steam single-sided etching silicon reactor has multiple acid storage tanks on one surface. The multiple acid storage tanks are arranged separately from each other. Each of the multiple acid storage tanks has a silicon wafer limiting slot at the outer periphery of the slot opening. Each of the multiple silicon wafer limiting slots has a wafer picking notch at the outer edge.

2. The high-efficiency steam single-sided silicon etching reactor according to claim 1, characterized in that, The high-efficiency steam single-sided etching silicon reactor is made of polytetrafluoroethylene.

3. The high-efficiency steam single-sided silicon etching reactor according to claim 1, characterized in that, The height of the high-efficiency steam single-sided etching silicon reactor is 35-40mm.

4. The high-efficiency steam single-sided silicon etching reactor according to claim 1, characterized in that, The multiple acid storage tanks are independently and uniformly distributed in a 3×3 matrix, and each of the multiple acid storage tanks is assigned an independent number.

5. The high-efficiency steam single-sided silicon etching reactor according to claim 4, characterized in that, The distance between adjacent acid storage tanks is 5-8 mm.

6. The high-efficiency steam single-sided silicon etching reactor according to claim 1, characterized in that, The depth of the acid storage tank is 25-30mm.

7. The high-efficiency steam single-sided silicon etching reactor according to claim 1, characterized in that, The depth of the silicon wafer limiting slot is 0.5-1mm.

8. The high-efficiency steam single-sided silicon etching reactor according to claim 1, characterized in that, The width of the notch for taking the sample is 5-8 mm.

9. The high-efficiency steam single-sided silicon etching reactor according to claim 1, characterized in that, The bottom of the high-efficiency steam single-sided etching silicon reactor is provided with anti-slip texture.

10. The high-efficiency steam single-sided silicon etching reactor according to claim 1, characterized in that, The inner walls of all of the acid storage tanks are marked with graduations.

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