Target material

Abstract

The utility model provides a target material, relates to the field of high-vacuum magnetron sputtering micro-nano film manufacturing, and aims to improve the uniformity of film preparation. The target material comprises a target surface; the target surface comprises a concave part which surrounds the center of the target material, and the first section of the concave part is arc-shaped. The first section is obtained by cutting off the concave part in the radial direction of the target material. According to the target material provided by the invention, the concave part is formed in the region with the high magnetic field intensity of the target surface, and the target material ions bombarded by ions in the target surface region with the low magnetic field intensity are less; the area with the large magnetic field intensity should be bombarded by the ions to form more target ions, but as the concave part is formed in the area with the large magnetic field intensity on the target surface, some bombarded target ions are deposited on the inner side wall of the concave part, so that balance is realized, and the purpose of uniform deposition of the thin film is achieved.

Description

Technical Field

[0001] This utility model relates to the field of high-vacuum magnetron sputtering micro / nano film manufacturing, specifically to a target material. Background Technology

[0002] Magnetron sputtering is a highly efficient physical vapor deposition technique that uses a magnetic field to control the electron movement path, thereby enhancing the density and stability of the plasma and enabling the preparation of high-quality, uniform thin films.

[0003] The process of preparing thin films by magnetron sputtering requires the use of a target material, but the uniformity of the thin films deposited using traditional targets is poor, especially for the initial deposited films, where the uniformity is very poor. Utility Model Content

[0004] This invention provides a target material designed to improve the uniformity of thin film preparation.

[0005] To achieve the above objectives, the embodiments of this utility model adopt the following technical solutions:

[0006] This application provides a target material, which includes a target surface; the target surface includes a recessed portion surrounding the center of the target material, and the first cross-section of the recessed portion is arc-shaped. The first cross-section is a cross-section obtained by cutting the recessed portion radially along the target material.

[0007] The target material provided in this application includes at least one recess, and the distribution of the recess is related to the distribution of the magnetic field strength on the target surface in the magnetron sputtering equipment. Since the magnetic field strength on the target surface in the magnetron sputtering equipment is non-uniformly distributed—that is, the magnetic field strength is high in some areas and low in others—the target material provided in this application forms recesses in areas with high magnetic field strength. Because fewer target ions are bombarded in areas with low magnetic field strength, and more target ions should be bombarded in areas with high magnetic field strength, some of the bombarded target ions are deposited on the inner wall of the recess due to the formation of the recess. The relatively increased deposition of target ions in areas with low magnetic field strength, due to the flatness of the target surface, and the relatively decreased deposition of target ions in areas with high magnetic field strength, due to the recess, achieves the goal of uniform thin film deposition.

[0008] As one possible implementation, the arc shape of the recess in the first cross section conforms to the surface distribution.

[0009] As one possible implementation, there are multiple recesses, all of which surround the center of the target material, and the radii of the multiple recesses are different.

[0010] As one possible implementation, there is a gap between two adjacent recesses.

[0011] As one possible implementation, the maximum depth of the recess closest to the center of the target is greater than the maximum depth of the remaining recesses.

[0012] As one possible implementation, the depth of multiple recesses gradually decreases along the radial direction of the target and gradually away from the center of the target.

[0013] As one possible implementation, the radius of curvature of the arc formed by the recess closest to the center of the target in the first cross section is greater than the radius of curvature of the arc formed by the remaining recesses in the first cross section.

[0014] As one possible implementation, the radius of curvature of the concave portion in the first cross section has an error greater than or equal to -20 mm and less than or equal to +20 mm.

[0015] As one possible implementation, the error between the maximum depth of the recess and the distance between the bottom of the target material and the target material is greater than or equal to -1 mm and less than or equal to 1 mm. The bottom of the target material is opposite to the target surface.

[0016] As one possible implementation, the target surface also includes connecting surfaces located on both sides of the recess in the radial direction, and the connecting surfaces are smoothly connected to the surface of the recess.

[0017] One possible implementation is to use the target material in a magnetron sputtering apparatus, which utilizes induction coils to generate a magnetic field. When the target material is mounted in the magnetron sputtering apparatus, the magnetic field strength at the recessed area is greater than the magnetic field strength in the non-recessed areas of the target surface. Attached Figure Description

[0018] Figure 1 A schematic diagram of a target material provided for an embodiment of this application;

[0019] Figure 2 An enlarged schematic diagram of a target surface provided in an embodiment of this application;

[0020] Figure 3 A sputtering analysis effect diagram on a target surface provided in an embodiment of this application;

[0021] Figure 4 A schematic diagram of another target material provided in an embodiment of this application;

[0022] Figure 5 This is an enlarged schematic diagram of a recessed portion provided in an embodiment of this application;

[0023] Figure 6This is a schematic diagram of a magnetron sputtering apparatus provided in an embodiment of this application;

[0024] Figure 7 This is a flowchart illustrating a method for preparing a target material according to an embodiment of this application. Detailed Implementation

[0025] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this utility model, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of this utility model.

[0026] The terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this utility model, unless otherwise stated, "a plurality of" means two or more.

[0027] In the description of this utility model, it should be noted that, unless otherwise explicitly specified and limited, the terms "connected" and "linked" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances. Furthermore, when describing pipelines, the terms "connected" and "linked" in this utility model have the meaning of establishing conductivity. The specific meaning needs to be understood in conjunction with the context.

[0028] In this embodiment of the invention, the terms "exemplary" or "for example" are used to indicate that something is an example, illustration, or description. Any embodiment or design described as "exemplary" or "for example" in this embodiment of the invention should not be construed as being more preferred or advantageous than other embodiments or designs. Specifically, the use of the terms "exemplary" or "for example" is intended to present the relevant concepts in a specific manner.

[0029] Magnetron sputtering is a highly efficient physical vapor deposition technique that utilizes a magnetic field to control the electron migration path, enhancing the density and stability of the plasma to achieve the fabrication of high-quality, uniform thin films. The magnetron sputtering equipment consists of a vacuum chamber and a target. An inert gas (such as argon) is introduced into the vacuum chamber. When a high-voltage electric field is applied to the gas, the argon is ionized to form a plasma. High-energy argon ions in the plasma, accelerated by the electric field, bombard the target surface, causing target atoms to be sputtered. These sputtered atoms are then deposited onto the substrate, layer by layer, to form the desired thin film.

[0030] The key to magnetron sputtering lies in introducing a magnetic field into the sputtering region, typically generated by a permanent magnet or electromagnet. This magnetic field increases the electron path length and residence time, enhancing plasma density and stability, thereby improving sputtering efficiency. Electrons move along a helical path under the combined influence of the magnetic and electric fields, significantly increasing their residence time within the sputtering region and boosting the ionization rate of argon and plasma density.

[0031] Currently, traditional targets are planar targets, meaning the target surface is horizontal. Planar targets result in poor film uniformity during magnetron sputtering deposition. Poor film uniformity means that some areas of the film are thicker than others, resulting in a highly uneven thickness distribution. In integrated circuit applications, the deposited metal films primarily serve as electrical connections, and the uniformity of the metal film directly affects its electrical properties.

[0032] In view of this, this application provides a target material, exemplarily, such as... Figure 1 and Figure 4 As shown. The target 1 includes a target surface 11. The target 1 includes a recess 111, which surrounds the center of the target 1. The first cross-section of the recess 111 is arc-shaped. Figure 1 The area within the dashed box is a schematic diagram of the first interface of a recessed portion 111. The first cross-section is the cross-section obtained by truncating the recessed portion 111 radially along the target material 1.

[0033] The target 1 provided in this application includes at least one recess 111, and the distribution of the recess 111 is related to the distribution of the magnetic field strength on the target surface 11 in the magnetron sputtering equipment. Since the magnetic field strength on the target surface 11 in the magnetron sputtering equipment is unevenly distributed, meaning that the magnetic field strength is high in some areas of the target surface 11 and low in others, the target 1 provided in this application forms recesses 111 in areas of high magnetic field strength on the target surface 11. Because fewer target ions are bombarded in areas of low magnetic field strength, while more target ions should be bombarded in areas of high magnetic field strength, some of the bombarded target ions are deposited on the inner wall of the recess due to the formation of the recesses 111 in these areas. The relatively increased deposition of target ions in areas of low magnetic field strength due to the flatness of the target surface, and the relatively decreased deposition of target ions in areas of high magnetic field strength due to the recesses, achieves the goal of uniform thin film deposition.

[0034] The uneven distribution of multiple fields in magnetron sputtering equipment causes differences in the consumption rate at different target locations. These differences affect the number of sputtered ions at different wafer locations, further contributing to variations in deposition rates. The embodiments provided in this application create surface variations on the target surface by forming recesses. These variations indicate a decrease in surface thickness and an increase in surface curvature at the target location. In areas with strong magnetic fields, more sputtered ions will be deposited onto the target, resulting in fewer sputtered ions deposited as thin films and a lower effective deposition rate. Therefore, even if the deposition rate at a target location is high due to the superposition of multiple fields, the deposition rate at that location can be balanced by adjusting the surface thickness and curvature. By optimizing the surface thickness and curvature, the uniformity of thin film deposition is ultimately improved.

[0035] To address the issue of varying target consumption rates caused by uneven multi-field distribution in magnetron sputtering equipment, this invention innovatively proposes an efficient and precise solution. While direct measurement of deposition thickness at different locations on the wafer allows for accurate calculation of deposition rate differences, the uneven multi-field distribution in magnetron sputtering equipment leads to variations in the consumption rate at different target locations. These deposition rate differences must be calculated by measuring the deposition thickness at each location. Therefore, obtaining the target surface distribution required for uniform thin film deposition necessitates extensive engineering experiments.

[0036] As one possible implementation, the arc shape of the recess 111 in the first cross section conforms to a curved surface distribution. For example, the curved surface distribution is a Gaussian distribution, that is, the arc shape of the recess 111 in the first cross section roughly conforms to the characteristics of a Gaussian distribution. For instance, the arc shape of the recess 111 in the first cross section has symmetry and unimodality.

[0037] Furthermore, in combination Figure 2 and Figure 3 The magnetron sputtering deposition process was analyzed. Figure 2 An enlarged view of the target surface provided in an embodiment of this application is shown. Figure 3 The diagram shows the sputtering analysis effect on the target surface provided in the embodiment of this application. Figure 2 The target shown includes four recesses 111, which are referred to from left to right as the first recess, the second recess, the third recess, and the fourth recess for ease of explanation.

[0038] according to Figure 2It can be seen that the degree of indentation of the different recesses 111 varies. For example, the radius of curvature at a certain position in the first recess is 80.29 mm, the radius of curvature at a certain position in the second recess is 49.31 mm, the radius of curvature at a certain position in the third recess is 58.72 mm, and the radius of curvature at a certain position in the fourth recess is 21.58 mm. The distance between the deepest point in the first recess and the surface opposite to the target is 6.62 mm, the distance between the deepest point in the second recess and the surface opposite to the target is 6.56 mm, the distance between the deepest point in the third recess and the surface opposite to the target is 6.42 mm, and the distance between the deepest point in the fourth recess and the surface opposite to the target is 5.71 mm.

[0039] As one possible implementation, to ensure good uniformity of the film deposited on the optimized target surface, the radius of curvature of the arc-shaped portion in the first cross-section has an error greater than or equal to -20 mm and less than or equal to +20 mm. It should be understood that the error mentioned in the embodiments of this application refers to the difference between actual production and theoretical calculation. Taking the aforementioned radius of curvature of the first recess of 80.29 mm as an example, after measuring the thickness of the film deposited at various locations on the wafer, the theoretically calculated radius of curvature of the first recess is 100.29 mm, while the actual radius of curvature of the first recess is 80.29 mm, with an error of 20 mm, which falls within the range of ±20 mm. Therefore, this effectively ensures the uniformity of the film deposited on the optimized target surface.

[0040] Similarly, as one possible implementation, the error between the maximum depth of the recess and the bottom of the target material is greater than or equal to -1 mm and less than or equal to 1 mm. Here, the bottom of the target material is opposite the target surface. After measuring the thickness of the deposited film at various locations on the wafer, the theoretically calculated distance between the maximum depth of the recess and the bottom of the target material is a theoretical value. However, in actual production, there may be errors between the maximum depth of the recess and the distance between the bottom of the target material. To ensure the uniformity of the film deposited on the optimized target surface, the error needs to be controlled within ±1 mm.

[0041] Reference Figure 3 , Figure 3 From left to right, the images represent the initial stage, middle stage, and late stage of the planar target's lifespan. According to... Figure 3 It can be seen that the curvature of the target surface 11 increases in the early, middle and late stages of the planar target lifetime. Since the electromagnetic intensity of region B is greater than that of regions A and C, more ionized ions bombard the target surface 11 in region B. Therefore, compared with regions A and C, more atoms on the target surface 11 corresponding to region B will be ejected due to bombardment and sputtered out.

[0042] Therefore, the target surfaces corresponding to regions A, B, and C become thinner due to the sputtering deposition of target atoms into thin films. However, compared to regions A and C, the target surface 11 corresponding to region B, which has a higher magnetic field strength, becomes thinner because more target atoms are sputtered and deposited into thin films. Thus, after a period of time, a depression will form in the region with a high magnetic field strength on the planar target.

[0043] For the deposited thin film, the number of target atoms sputtered in region B is greater than that in regions A and C. Therefore, the thin film deposited in region B is thicker, while the thin films deposited in regions A and C are thinner.

[0044] In the early to mid-stages of target material use, even if a depression forms on the target surface corresponding to a region with high magnetic field strength, some of the target atoms sputtered from the depression will deposit on the inner wall of the depression. However, due to the small radius of curvature of the depression, even if some target atoms are deposited on the inner wall of the depression, the number of target atoms remaining to be deposited into the thin film is still higher than the number of target atoms deposited in the thin film in regions with low magnetic field strength. Therefore, the uniformity of the deposited thin film is still relatively poor.

[0045] Since the magnetic field strength typically remains constant, the target surface 11 corresponding to regions with high magnetic field strength consistently loses more target atoms than the target surface 11 corresponding to regions with low magnetic field strength. Therefore, the depressions on the target surface 11 become increasingly deeper, meaning that towards the end of the target's lifespan, the depression depth becomes quite significant. At this point, compared to region B, the target surfaces 11 corresponding to regions A and C are relatively flat. Although the number of sputtered target atoms is less due to the influence of the magnetic field strength, most of them are deposited in regions A and C. While the target surface 11 corresponding to region B sputters a larger number of target atoms, due to the greater depth of the depression, a large number of sputtered target atoms deposit on the sidewalls of the depression, resulting in fewer target atoms deposited in region B. Under this variation, the deposition of target atoms becomes more uniform.

[0046] Therefore, the target material provided in this application embodiment has the same target surface morphology as that of a traditional planar target in the later stages of its lifespan. Depressions are formed on the target surface corresponding to areas of high magnetic field strength to balance the number of target atoms sputtered on the target surface corresponding to areas of low magnetic field strength, thereby achieving uniformity of the deposited thin film. By using the target material provided in this application embodiment, the uniformity of the magnetron sputtered thin film is improved by more than 100% in the initial stage.

[0047] The aforementioned figures are cross-sectional views of the target material. For example, the overall morphology of the target material provided in this application is shown below. Figure 4 As shown. (Refer to...) Figure 4 There are multiple recesses 111, all of which surround the center of the target 1, and the radii of the multiple recesses 111 are different. Figure 4 The recessed portion 111 is annular, surrounding the center of the target material 1, and there is a gap between two adjacent recessed portions 111, that is, one recessed portion is connected to one non-recessed portion, and the non-recessed portion is connected to another recessed portion. Due to the height difference between the recessed portion and the non-recessed portion, the target surface of the target material 1 forms a stepped multi-ring curved surface morphology.

[0048] As one possible implementation, the target surface also includes connecting surfaces located on both sides of the recess in the radial direction, with the connecting surfaces smoothly transitioning to the surface of the recess. The connecting surfaces are also the non-recessed portions, with the recessed portion connecting to two non-recessed portions on each side in the radial direction.

[0049] As one possible implementation, the maximum depth of the recess closest to the center of the target material is greater than the maximum depth of the remaining recesses. In some embodiments, refer to Figure 2 and Figure 4 In a cross-section of the recess 111 along a cross-sectional line passing through the center and edge of the target material, the recess 111 includes a central position (shown as a black dot in the figure) and other positions located on either side of the central position, with the depth of the central position being greater than the depth of the other positions. For each recess 111, the depth of the central position is greater than the depth of the other positions. For the entire target surface, the maximum depth of the recess 111 closest to the center of the target material 1, that is, the depth of the central position of the recess 111 closest to the center of the target material 1, is greater than the depth of the central positions of all other recesses 111.

[0050] As one possible implementation, the radius of curvature of the arc formed by the recess closest to the center of the target in the first cross section is greater than the radius of curvature of the arc formed by the remaining recesses in the first cross section.

[0051] As one possible implementation, other locations of the recess 111 include edge locations, such as the locations where the curvature of the recess 111 is minimal, i.e., the two endpoints of the recess 111. Examples include... Figure 5 As shown, Figure 5 This is an enlarged view of a recess 111 in the cross-sectional view of the target material. Figure 5 The recess 111 includes a central location 1111 and two edge locations 1112, with the central location 1111 located at the deepest point of the recess 111 and the edge locations 1112 located at the shallowest point of the recess 111. In some embodiments, combined with Figure 2 and Figure 5As can be seen, for each recess 111, the depth of the recess 111 gradually decreases along the direction from the center to the edge. For the entire target surface, the depth of the multiple recesses 111 gradually decreases along the radial direction of the target 1 and gradually away from the center of the target 1.

[0052] As one possible implementation, the depth of other locations within the recess is symmetrically distributed along the central location. Since the magnetic field strength distribution on the target surface is curved, exhibiting symmetry and a single peak, and the distribution of the recess on the target surface provided in this application is related to the distribution of the magnetic field strength on the target surface in the magnetron sputtering equipment, only one central location of the recess corresponds to the single-peak characteristic of the curved magnetic field strength distribution on the target surface. The symmetrical distribution of depth at other locations within the recess along the central location corresponds to the symmetrical characteristic of the curved magnetic field strength distribution on the target surface.

[0053] As one possible implementation, such as Figure 4 As shown, the target surface includes multiple recesses 111, with a gap between adjacent recesses 111. Since the distribution of magnetic field strength is not typically bipolar, meaning that the magnetic field strength is weaker on one side of a dividing line and stronger on the other, but rather alternates between strong and weak magnetic fields on the target surface, multiple recesses 111 are formed on the target surface to accommodate the influence of the target surface magnetic field strength on the uniformity of the deposited film. A certain gap exists between adjacent recesses 111.

[0054] This application also provides a magnetron sputtering device, exemplarily, such as... Figure 6 As shown. The magnetron sputtering apparatus 100 includes a reaction chamber 2, an induction coil 3, and a target 1 as described above. The reaction chamber 2 is used to hold the substrate to be coated; the induction coil 3 generates a magnetic field that drives the reactive gas to bombard the target surface of the target. The target 1 is used in the magnetron sputtering apparatus, which utilizes the induction coil to generate the magnetic field. When the target 1 is mounted in the magnetron sputtering apparatus, the magnetic field strength at the location of the recess 111 is greater than the magnetic field strength in the non-recessed areas of the target surface 11 of the target 1.

[0055] Reference Figure 1Because the target 1 provided in this application has at least one recess 111, the position of the recess 111 is related to the distribution of the magnetic field strength on the target surface 11. In the target surface area with low magnetic field strength, fewer target ions are bombarded by ions, while in the target surface area with high magnetic field strength, more target ions should be bombarded by ions. However, because the recess 111 is formed in the area with high magnetic field strength on the target surface 11, some of the bombarded target ions are deposited on the inner wall of the recess. Therefore, the target surface area with low magnetic field strength achieves a relatively increased deposition of target ions by utilizing the flat target surface area feature, while the target surface area with high magnetic field strength achieves a relatively reduced deposition of target ions by utilizing the recess feature, thereby achieving the purpose of uniform film deposition.

[0056] This application also provides a method for designing a target material, for example, such as... Figure 7 As shown. The design methods for the target material include:

[0057] S1: Obtain multiple thickness data of the reference target after using a preset time.

[0058] As mentioned earlier, the film thickness deposited in the early and middle stages of the planar target's lifetime is not uniform, while the film thickness deposited in the later stages of the planar target's lifetime is more uniform. Therefore, the thickness data of the planar target can be obtained by scanning the morphological characteristics in the later stages of the planar target's lifetime.

[0059] Multiple thickness data include the distances between multiple reference points on the target surface (hereinafter referred to as the first surface) of the reference target and the second surface of the reference target, wherein the target surface and the second surface of the reference target are positioned relative to each other in the thickness direction of the reference target. In the above example, the reference target is also a planar target.

[0060] S2: Based on multiple thickness data, determine the morphology of the target surface of the target material.

[0061] The thickness distribution of the target material is the same as that of the reference target material. By obtaining multiple thickness data, the morphological characteristics of the target material can be determined, which means we can determine where a depression needs to be formed to eliminate the influence of the strong magnetic field.

[0062] More specifically, designing a target material based on multiple thickness data includes: generating a thickness distribution model of the target material based on the multiple thickness data. The thickness distribution model of the target material includes a third surface and a fourth surface, and the thickness distribution between the third and fourth surfaces of the target material's thickness distribution model indicates the thickness distribution between the first and second surfaces of the reference target material. Based on the thickness distribution of the target material's thickness distribution model, the target material is fabricated.

[0063] As one possible implementation, the "thickness distribution model of the target material" is a virtual three-dimensional model, rather than a formula or a set of data. "The thickness distribution between the third and fourth surfaces of the target material's thickness distribution model indicates the thickness distribution between the first and second surfaces of the reference target material." This means that this virtual model can be viewed as a scaled-down model of the reference target material, or a model enlarged or reduced to a certain scale, and the thickness distribution between the third and fourth surfaces of the target material's thickness distribution model reflects the thickness distribution between the first and second surfaces of the reference target material.

[0064] For example, the thickness distribution model of the target material is scaled down to the reference target material at a ratio of 1:2. Therefore, in the thickness distribution model of the target material, the distance between the center of the target surface and the center of the first recess is twice the distance between the center of the actual target surface and the center of the first recess.

[0065] The following logic can be used to obtain multiple thickness data of the reference target after a preset time:

[0066] Establish a rectangular coordinate system with the center of the reference target. The direction from the center of the target to the edge of the target is taken as the X-axis, where the direction from the center of the target to the left edge of the target is taken as the negative half-axis of X, and the direction from the center of the target to the right edge of the target is taken as the positive half-axis of X. The direction perpendicular to the target surface is taken as the Y-axis. The downward concavity of the target surface means that it is located on the negative half-axis of the Y-axis.

[0067] Scanning various positions on the target surface yields the horizontal and vertical coordinates at each location. The horizontal coordinate represents the distance from the target center, and its sign indicates whether the target is to the left or right of the center. The vertical coordinate represents the elevation relative to the target center. Therefore, a virtual model of the reference target can be obtained based on these coordinates.

[0068] Other embodiments of this application will readily occur to those skilled in the art upon consideration of the specification and practice of the utility model disclosed herein. This application is intended to cover any variations, uses, or adaptations of this application that follow the general principles of this application and include common knowledge or customary techniques in the art not disclosed herein.

[0069] Finally, it should be noted that the above are merely specific embodiments of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions within the technical scope disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A target material, characterized by, The target material includes a target surface; The target surface includes a recessed portion surrounding the center of the target material. The first cross-section of the recessed portion is arc-shaped. The first cross-section is a cross-section obtained by cutting the recessed portion radially along the target material. The radius of curvature of the arc formed by the recessed portion in the first cross-section has an error greater than or equal to -20 mm and less than or equal to +20 mm.

2. The target of claim 1, wherein The concave portion in the first cross section has an arc shape that conforms to the surface distribution.

3. The target of claim 1, wherein The number of the recesses is multiple, and the multiple recesses all surround the center of the target material, and the radii of the multiple recesses are different.

4. The target of claim 3, wherein There is a gap between two adjacent recesses.

5. The target of claim 3, wherein The maximum depth of the recess closest to the center of the target material is greater than the maximum depth of the remaining recesses.

6. The target of claim 5, wherein Along the radial direction of the target and gradually away from the center of the target, the depth of the plurality of recesses gradually decreases.

7. The target of claim 3, wherein The radius of curvature of the arc formed by the recess closest to the center of the target material in the first cross section is greater than the radius of curvature of the arc formed by the remaining recesses in the first cross section.

8. The target according to any one of claims 1 to 7, wherein The error between the maximum depth of the recess and the distance between the bottom of the target material and the target material is greater than or equal to -1 mm and less than or equal to 1 mm; wherein the bottom of the target material is opposite to the target surface.

9. The target according to any one of claims 1 to 7, wherein The target surface also includes a connecting surface, which is located on both sides of the recess in the radial direction, and the connecting surface is smoothly connected to the surface of the recess.

10. The target material of any one of claims 1-7, wherein, The target material is used in a magnetron sputtering device, which uses an induction coil to generate a magnetic field; When the target is installed in the magnetron sputtering equipment, the magnetic field strength at the location of the recess is greater than the magnetic field strength in the non-recessed area of ​​the target surface.

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