Time type rapid coating atomic layer deposition device

Abstract

The utility model belongs to the technical field of atomic layer deposition, and relates to a time type rapid coating atomic layer deposition device which comprises a transportation assembly, a first heating assembly, a second heating assembly, a first reaction assembly, a second reaction assembly, a precursor conveying assembly, a first extraction assembly and a second extraction assembly. The time type rapid coating atomic layer deposition device provided by the utility model is provided with the heat preservation cavity specially used for sample heat preservation and the process cavity used for depositing the thin film, so that the time required by heating the sample to the growth temperature of the thin film is saved, the production efficiency is improved, and a rapid coating process can be realized; and meanwhile, the method has the advantages of low cost, high efficiency and stable production.

Description

Technical Field

[0001] This utility model relates to the field of atomic layer deposition technology, and in particular to a time-based rapid atomic layer deposition apparatus. Background Technology

[0002] Atomic layer deposition (ALD) is a method that deposits material onto a substrate surface in the form of a single-atom film. However, during ALD, the chemical reaction of the new atomic layer is directly related to the previous layer, which means that each reaction deposits only one atomic layer.

[0003] Films fabricated by atomic layer deposition (ALD) possess advantages such as high purity and good uniformity, making ALD widely used in various fields. ALD is a method of forming a deposited film by alternately pulsed gaseous precursors into a reactor, where they are chemically adsorbed and react on the substrate. When the precursors reach the substrate surface, they chemically adsorb and react on the surface. Between precursor pulses, the ALD reactor needs to be cleaned with an inert gas.

[0004] Conventional ALD (Atomic Layer Deposition) technology is mostly used for small-sized planar samples, and its application in the preparation of large-sized thin film materials started relatively late and lacks experience. In practical applications, large-sized thin film ALD equipment is crucial for industrial production, and both production efficiency and film quality are paramount. Due to the characteristics of ALD, the film deposition rate is slower compared to other thin film deposition methods, making it impossible to achieve the expected production cycle in industrial applications. Utility Model Content

[0005] In view of this, the present invention provides a time-based rapid atomic layer deposition apparatus.

[0006] Specifically, this utility model is achieved through the following technical solution:

[0007] According to a first aspect of the present invention, a time-based rapid atomic layer deposition apparatus is provided, comprising:

[0008] Transport components for transferring samples;

[0009] A first heating element is used to provide a preheated space; the first heating element at least partially encloses the transport component.

[0010] A second heating component is used to provide a preheated space; the second heating component is connected to the first heating component and at least partially encloses the transport component;

[0011] A first reaction assembly is used to provide a reaction space; the first reaction assembly is connected to the second heating assembly and at least partially encloses the transport assembly;

[0012] A second reaction assembly is used to provide a reaction space; the second reaction assembly is connected to the first reaction assembly and at least partially encloses the transport assembly;

[0013] A precursor delivery assembly is used to deliver precursors to the first reaction assembly and the second reaction assembly; the precursor delivery assembly is connected to the first reaction assembly and the second reaction assembly, respectively;

[0014] A first extraction component is used to create a vacuum within the first heating component and the second heating component; the first extraction component is connected to the first heating component and the second heating component respectively;

[0015] The second extraction component is used to create a vacuum within the first reaction component and the second reaction component; the first extraction component is connected to the first reaction component and the second reaction component respectively.

[0016] Optionally, the transport component includes a conveyor belt, a conveyor wheel, and a drive motor, wherein the two ends of the conveyor belt are wound around the corresponding sides of the conveyor wheel, the conveyor wheel is rotatably connected to the drive motor, and the conveyor belt passes sequentially through the internal spaces of the first heating component, the second heating component, the first reaction component, and the second reaction component.

[0017] Optionally, the first heating assembly includes: a first heating chamber, a first heater, and a first gate valve, wherein the conveyor belt in the transport assembly passes sequentially through the openings at both ends of the first heating chamber and enters the internal space of the second heating assembly, the first heater is disposed on the inner wall of the first heating chamber, the first gate valve is disposed at the opening at the first end of the first heating chamber, and the opening at the second end of the first heating chamber connects to the internal space of the second heating assembly.

[0018] Optionally, the second heating assembly includes: a second heating chamber, a second heater, and a second gate valve, wherein the conveyor belt in the transport assembly passes sequentially through the openings at both ends of the second heating chamber and enters the internal space of the first reaction assembly, the second heater is disposed on the inner wall of the second heating chamber, and the second gate valve is disposed between the second end opening of the first heating chamber and the first end opening of the second heating chamber in the first heating assembly, and the second end opening of the second heating chamber is connected to the internal space of the first reaction assembly.

[0019] Optionally, the first reaction assembly includes: a first reaction chamber, a third heater, and a third gate valve, wherein the conveyor belt in the transport assembly passes sequentially through the two end openings of the first reaction chamber and enters the internal space of the second reaction assembly, the third heater is disposed on the inner wall of the first reaction chamber, and the third gate valve is disposed between the second end opening of the second heating chamber in the second heating assembly and the first end opening of the first reaction chamber, wherein the second end opening of the first reaction chamber connects to the internal space of the second reaction assembly.

[0020] Optionally, the second reaction assembly includes: a second reaction chamber, a fourth heater, a fourth gate valve, and a fifth gate valve, wherein the conveyor belt in the transport assembly passes sequentially through the two end openings of the second reaction chamber, the fourth heater is disposed on the inner wall of the second reaction chamber, the fourth gate valve is disposed between the second end opening of the second heating chamber in the second heating assembly and the first end opening of the first reaction chamber, and the fifth gate valve is disposed at the second end opening of the second reaction chamber.

[0021] Optionally, the precursor delivery assembly includes: a precursor source bottle, an inlet pipeline, a first inlet valve, and a second inlet valve, wherein the precursor source bottle is connected to a first reaction chamber in the first reaction assembly and a second reaction chamber in the second reaction assembly via the inlet pipeline, the first inlet valve is disposed on the inlet pipeline between the precursor source bottle and the first reaction chamber, and the second inlet valve is disposed on the inlet pipeline between the precursor source bottle and the second reaction chamber.

[0022] Optionally, the first extraction assembly includes: a first pre-stage valve, a second pre-stage valve, and a first vacuum pump, wherein the first vacuum pump is connected to a first heating chamber in the first heating assembly and a second heating chamber in the second heating assembly, the first pre-stage valve is disposed on a pipe between the first heating chamber and the first vacuum pump, and the second pre-stage valve is disposed on a pipe between the second heating chamber and the first vacuum pump.

[0023] Optionally, the second extraction assembly includes: a third fore-stage valve, a fourth fore-stage valve, and a second vacuum pump, wherein the second vacuum pump is connected to the first reaction chamber in the first reaction assembly and the second reaction chamber in the second reaction assembly, the third fore-stage valve is disposed on the pipeline between the first reaction chamber and the second vacuum pump, and the fourth fore-stage valve is disposed on the pipeline between the second reaction chamber and the first vacuum pump.

[0024] Optionally, a sample tray is provided in both the first heating chamber of the first heating assembly and the second heating chamber of the second heating assembly.

[0025] The technical solution provided by this utility model brings at least the following beneficial effects:

[0026] The present application provides a time-based rapid atomic layer deposition apparatus equipped with a dedicated heat preservation chamber for sample heat preservation and a process chamber for depositing thin films. This saves the time required for the sample to be heated to the film growth temperature, improves production efficiency, and enables rapid deposition processes. It also has the advantages of low cost, high efficiency, and stable production. Attached Figure Description

[0027] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with the present invention and, together with the description, serve to explain the principles of the present invention.

[0028] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the drawings used in the description of the embodiments or related technologies will be briefly introduced below. Obviously, for those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0029] Figure 1 This is a schematic diagram of a time-based rapid atomic layer deposition apparatus provided in an embodiment of the present invention. Detailed Implementation

[0030] To make the objectives, technical solutions, and advantages of the embodiments of this utility model clearer, the technical solutions of the embodiments of this utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this utility model. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the protection scope of this utility model.

[0031] Figure 1 The illustration schematically depicts a time-based rapid atomic layer deposition apparatus suitable for embodiments of the present invention.

[0032] Reference Figure 1 As shown, this application provides a time-sensitive rapid atomic layer deposition apparatus, comprising:

[0033] Transport components for transferring samples;

[0034] A first heating element is used to provide a preheated space; the first heating element at least partially encloses the transport component.

[0035] A second heating component is used to provide a preheated space; the second heating component is connected to the first heating component and at least partially encloses the transport component;

[0036] A first reaction assembly is used to provide a reaction space; the first reaction assembly is connected to the second heating assembly and at least partially encloses the transport assembly;

[0037] A second reaction assembly is used to provide a reaction space; the second reaction assembly is connected to the first reaction assembly and at least partially encloses the transport assembly;

[0038] A precursor delivery assembly is used to deliver precursors to the first reaction assembly and the second reaction assembly; the precursor delivery assembly is connected to the first reaction assembly and the second reaction assembly, respectively;

[0039] A first extraction component is used to create a vacuum within the first heating component and the second heating component; the first extraction component is connected to the first heating component and the second heating component respectively;

[0040] The second extraction component is used to create a vacuum within the first reaction component and the second reaction component; the first extraction component is connected to the first reaction component and the second reaction component respectively.

[0041] In this embodiment, the transport component sequentially transports the sample to the internal spaces of the first heating component, the second heating component, the first reaction component, and the second reaction component. The first and second heating components heat the sample sequentially, while the first extraction component evacuates the internal spaces of the first and second heating components. After heating the sample, the transport component sequentially transports the sample from the second heating component to the first and second reaction components. Simultaneously, the second extraction component evacuates the internal spaces of the first and second reaction components. The precursor delivery component alternately delivers precursor materials into the first and second reaction components, where they react with the sample to obtain a product. The product is then output by the transport component. This highly efficient and ingeniously designed time-dependent atomic layer deposition (ALD) apparatus significantly improves deposition efficiency while maintaining economic efficiency and stability in production through optimized structure and process. The following is a detailed analysis of each part of the apparatus and a summary of its advantages:

[0042] 1. Components and functions of the device

[0043] Transport components: Responsible for the precise and rapid movement of the sample to be coated within the device. This may employ automated or mechanized methods to ensure rapid and accurate transfer of the sample between heating, reaction, and extraction steps.

[0044] The first heating element and the second heating element are used for preheating and precisely controlling the sample to reach the temperature required for film growth, respectively. Rapid heating reduces the time required to reach the target temperature, thereby improving production efficiency.

[0045] The first and second reaction components provide the chemical reaction environment required for thin film deposition. High-quality thin film growth is ensured through precise control of reaction conditions (such as temperature, pressure, and precursor concentration).

[0046] Precursor delivery assembly: Responsible for delivering precursor gas (or liquid) into the reaction chamber to react chemically with the sample surface. Precise control of the precursor delivery rate and volume optimizes the thin film growth process.

[0047] The first and second extraction components are responsible for removing unreacted precursors and byproducts from the reaction chamber after the reaction is complete. This maintains the cleanliness and stability of the reaction chamber, preparing it for the next coating process.

[0048] The insulation chamber and the process chamber: The insulation chamber is used to preheat and maintain the temperature of the sample before coating, reducing the heating time. The process chamber is the main area for thin film deposition and has the ability to precisely control the reaction conditions.

[0049] 2. Summary of Advantages

[0050] High-efficiency production: Rapid heating and precise control of reaction conditions significantly shorten the coating cycle and improve production efficiency. Low cost: Optimized design and efficient coating process reduce energy consumption and material waste, thereby lowering production costs. Stability: Precise control system and efficient extraction components ensure the stability and repeatability of the coating process, improving product quality. Flexibility: This device can adapt to the deposition needs of different materials and film thicknesses, offering broad application prospects.

[0051] For example, the transport component includes: a conveyor belt 1, a conveyor wheel, and a drive motor, wherein the two ends of the conveyor belt 1 are wound around the corresponding side of the conveyor wheel, the conveyor wheel is rotatably connected to the drive motor, and the conveyor belt 1 passes through the internal space of the first heating component, the second heating component, the first reaction component, and the second reaction component in sequence.

[0052] In this embodiment of the application, after the drive motor is started, it drives the conveyor wheels on both sides to rotate. The conveyor belt 1 wrapped around the conveyor wheels on both sides passes through the internal space of the first heating component, the second heating component, the first reaction component and the second reaction component in sequence, thereby completing the sample transport.

[0053] For example, the first heating assembly includes: a first heating chamber 61, a first heater 71, and a first gate valve 21, wherein the conveyor belt 1 in the transport assembly passes through the openings at both ends of the first heating chamber 61 and enters the internal space of the second heating assembly, the first heater 71 is disposed on the inner wall of the first heating chamber 61, the first gate valve 21 is disposed at the opening at the first end of the first heating chamber 61, and the opening at the second end of the first heating chamber 61 is connected to the internal space of the second heating assembly.

[0054] In this embodiment, the first gate valve 21 is used to isolate the outside world from the first heating chamber 61. When the sample is transported to the internal space of the first heating chamber 61, the first heater 71 heats the sample.

[0055] For example, the second heating assembly includes: a second heating chamber 62, a second heater 72, and a second gate valve 22, wherein the conveyor belt 1 in the transport assembly passes through the openings at both ends of the second heating chamber 62 and enters the internal space of the first reaction assembly, the second heater 72 is disposed on the inner wall of the second heating chamber 62, and the second gate valve 22 is disposed between the second end opening of the first heating chamber 61 in the first heating assembly and the first end opening of the second heating chamber 62, and the second end opening of the second heating chamber 62 is connected to the internal space of the first reaction assembly.

[0056] In this embodiment, the second gate valve 22 is used to isolate the first heating chamber 61 and the second heating chamber 62. When the sample is transported to the internal space of the second heating chamber 62, the second heater 72 heats the sample.

[0057] For example, the first reaction assembly includes a first reaction chamber 63, a third heater 73, and a third gate valve 23. The conveyor belt 1 in the transport assembly passes through the openings at both ends of the first reaction chamber 63 and enters the internal space of the second reaction assembly. The third heater 73 is disposed on the inner wall of the first reaction chamber 63. The third gate valve 23 is disposed between the second end opening of the second heating chamber 62 in the second heating assembly and the first end opening of the first reaction chamber 63. The second end opening of the first reaction chamber 63 connects to the internal space of the second reaction assembly.

[0058] In this embodiment, the third gate valve 23 is used to isolate the first reaction chamber 63 and the second heating chamber 62. When the sample is transported to the internal space of the first reaction chamber 63, the precursor material is also transported into the first reaction chamber 63. The third heater 73 heats the sample and the precursor material, and the product is obtained after the reaction.

[0059] For example, the second reaction assembly includes a second reaction chamber 64, a fourth heater 74, a fourth gate valve 24, and a fifth gate valve 25, wherein the conveyor belt 1 in the transport assembly passes sequentially through the openings at both ends of the second reaction chamber 64, the fourth heater 74 is disposed on the inner wall of the second reaction chamber 64, the fourth gate valve 24 is disposed between the second end opening of the second heating chamber 62 in the second heating assembly and the first end opening of the first reaction chamber 63, and the fifth gate valve 25 is disposed at the second end opening of the second reaction chamber 64.

[0060] In this embodiment, the fourth gate valve 24 is used to isolate the first reaction chamber 63 and the second heating chamber 62, and the fifth gate valve 25 is used to isolate the outside world and the second heating chamber 62. When the sample is transported to the internal space of the second reaction chamber 64, the precursor material is also transported into the second reaction chamber 64. Since there is a possibility that some raw materials have not fully reacted in the first reaction chamber 63, these raw materials can be heated in the second heating chamber 62 by the third heater 73, and after reaction, the product is obtained and output by the conveyor belt 1.

[0061] For example, the precursor delivery assembly includes: a precursor source bottle 8, an inlet pipe 9, a first inlet valve 45, and a second inlet valve 46. The precursor source bottle 8 is connected to a first reaction chamber 63 in the first reaction assembly and a second reaction chamber 64 in the second reaction assembly via the inlet pipe 9. The first inlet valve 45 is disposed on the inlet pipe 9 between the precursor source bottle 8 and the first reaction chamber 63, and the second inlet valve 46 is disposed on the inlet pipe 9 between the precursor source bottle 8 and the second reaction chamber 64.

[0062] In this embodiment, precursor materials are stored in the precursor source bottle 8. The precursor materials are transferred to the first reaction chamber 63 and the second reaction chamber 64 via the source inlet pipe 9. The first source inlet valve 45 is used to control the precursor materials entering the first reaction chamber 63, and the second source inlet valve 46 is used to control the precursor materials entering the second reaction chamber 64.

[0063] For example, the first extraction assembly includes a first pre-vacuum valve 41, a second pre-vacuum valve 42, and a first vacuum pump 51, wherein the first vacuum pump 51 is connected to the first heating chamber 61 in the first heating assembly and the second heating chamber 62 in the second heating assembly, the first pre-vacuum valve 41 is disposed on the pipe between the first heating chamber 61 and the first vacuum pump 51, and the second pre-vacuum valve 42 is disposed on the pipe between the second heating chamber 62 and the first vacuum pump 51.

[0064] In this embodiment, the first vacuum pump 51 performs a vacuuming operation on the internal space of the first heating chamber 61 and the second heating chamber 62 through a pipeline. The first pre-valve 41 is used to switch the connection between the first vacuum pump 51 and the first heating chamber 61, and the second pre-valve 42 is used to switch the connection between the first vacuum pump 51 and the second heating chamber 62.

[0065] For example, the second extraction component includes a third pre-valve 43, a fourth pre-valve 44, and a second vacuum pump 52, wherein the second vacuum pump 52 is connected to the first reaction chamber 63 in the first reaction component and the second reaction chamber 64 in the second reaction component, the third pre-valve 43 is disposed on the pipeline between the first reaction chamber 63 and the second vacuum pump 52, and the fourth pre-valve 44 is disposed on the pipeline between the second reaction chamber 64 and the first vacuum pump 52.

[0066] In this embodiment, the second vacuum pump 52 performs a vacuuming operation on the internal space of the first reaction chamber 63 and the second reaction chamber 64 through a pipeline. The third pre-valve 43 is used to switch the connection between the second vacuum pump 52 and the first reaction chamber 63, and the fourth pre-valve 44 is used to switch the connection between the second vacuum pump 52 and the second reaction chamber 64.

[0067] For example, a sample tray 3 is provided in both the first heating chamber 61 of the first heating assembly and the second heating chamber 62 of the second heating assembly.

[0068] In this embodiment, the sample tray 3 is used to receive samples transported by the conveyor belt 1.

[0069] This application provides a time-based rapid atomic layer deposition (ALD) apparatus that deposits thin films by alternately introducing precursor sources to react in a reaction chamber. Compared to spatial ALD equipment, the time-based rapid ALD apparatus provides a denser film with superior performance in various aspects, achieving the goal of producing high-quality films. Addressing the slow deposition rate of time-based ALD, this application provides a time-based rapid ALD apparatus with a dedicated heat preservation chamber for sample insulation and a process chamber for film deposition. This saves the time required to heat the sample to the film growth temperature, improves production efficiency, and enables a rapid deposition process.

[0070] A comprehensive analysis of the time-based rapid atomic layer deposition apparatus provided in this application:

[0071] 1. Detailed Explanation of Device Structure and Function

[0072] (1) Transport components

[0073] Conveyor Belt 1: Serving as the primary sample transport tool, it is wound around a conveyor wheel and driven by a drive motor to achieve continuous or intermittent sample transport. The conveyor wheel and drive motor work together to ensure the smooth and accurate movement of Conveyor Belt 1.

[0074] (2) Heating components

[0075] First heating assembly: First heating chamber 61: Contains a first heater 71 for initial heating of the sample. First gate valve 21: Controls the inlet of the first heating chamber 61 to ensure sealing during the heating process.

[0076] Second heating assembly: Second heating chamber 62: Contains a second heater 72 for further heating the sample to the temperature required for film growth. Second gate valve 22: Isolates the first heating chamber 61 and the second heating chamber 62 to ensure the independence of the heating process.

[0077] (3) Reaction components

[0078] First reaction assembly: First reaction chamber 63: Contains a third heater 73 for chemical reaction with the sample in the presence of the precursor material. Third gate valve 23: Isolates the first reaction chamber 63 and the second heating chamber 62 to ensure the independence of the reaction process.

[0079] Second reaction assembly: Second reaction chamber 64: Contains a fourth heater 74 for further reaction of any unreacted precursor material with the sample. Fourth gate valve 24 (located at the connection between the first reaction chamber 63 and the second reaction chamber 64) and fifth gate valve 25: Control the inlet and outlet of the second reaction chamber 64 respectively, ensuring the sealing and independence of the reaction process.

[0080] (4) Precursor delivery assembly

[0081] Precursor source bottle 8: Stores precursor materials.

[0082] Inlet pipe 9, first inlet valve 45 and second inlet valve 46: respectively control the flow rate and timing of the precursor material entering the first reaction chamber 63 and the second reaction chamber 64.

[0083] (5) Extraction of components

[0084] The first extraction assembly includes a first pre-valve 41, a second pre-valve 42, and a first vacuum pump 51, used to extract gas from the heating chamber to maintain a clean environment before the reaction.

[0085] The second extraction component includes a third pre-valve 43, a fourth pre-valve 44, and a second vacuum pump 52, which are used to extract reaction products and unreacted precursors from the reaction chamber to ensure the continuity and efficiency of the reaction process.

[0086] (6) Sample tray 3: Set in the heating chamber to receive and support the sample.

[0087] In summary, the time-based rapid atomic layer deposition apparatus provided in this application is equipped with a dedicated insulation chamber for sample insulation and a process chamber for thin film deposition, which saves the time required for the sample to be heated to the thin film growth temperature, improves production efficiency, and enables rapid deposition processes; at the same time, it has the advantages of low cost, high efficiency and stable production.

[0088] It should be noted that in this application, the terms "upper," "lower," "left," "right," "front," "rear," "top," "bottom," "inner," "outer," "vertical," "horizontal," "lateral," and "longitudinal" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. These terms are mainly for the purpose of better describing this application and its embodiments, and are not intended to limit the indicated device, element, or component to having a specific orientation, or to be constructed and operated in a specific orientation.

[0089] Furthermore, in addition to indicating location or positional relationship, some of the aforementioned terms may also have other meanings. For example, the term "above" may also be used in some cases to indicate a certain dependency or connection relationship. Those skilled in the art can understand the specific meaning of these terms in this application based on the specific circumstances.

[0090] Furthermore, the terms "installation," "setup," "equipped with," "connection," and "linked" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral structure; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium, or an internal connection between two devices, components, or parts. Those skilled in the art can understand the specific meaning of these terms in this application based on the specific circumstances.

[0091] Furthermore, the terms "first," "second," etc., are primarily used to distinguish different devices, components, or parts (which may be the same or different in specific type and construction), and are not intended to indicate or imply the relative importance or quantity of the indicated devices, components, or parts. Unless otherwise stated, "a plurality of" means two or more.

[0092] The above description is merely a specific embodiment of the present invention, enabling those skilled in the art to understand or implement the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features claimed herein.

Claims

1. A time-type rapid coating atomic layer deposition apparatus, characterized by, include: Transport components for transferring samples; The first heating element is used to provide preheating space; The first heating component at least partially encloses the transport component; A second heating component is used to provide a preheated space; the second heating component is connected to the first heating component and at least partially encloses the transport component; A first reaction assembly is used to provide a reaction space; the first reaction assembly is connected to the second heating assembly and at least partially encloses the transport assembly; A second reaction assembly is used to provide a reaction space; the second reaction assembly is connected to the first reaction assembly and at least partially encloses the transport assembly; A precursor delivery assembly is used to deliver precursors to the first reaction assembly and the second reaction assembly; the precursor delivery assembly is connected to the first reaction assembly and the second reaction assembly, respectively; A first extraction component is used to create a vacuum within the first heating component and the second heating component; the first extraction component is connected to the first heating component and the second heating component respectively; The second extraction component is used to create a vacuum within the first reaction component and the second reaction component; the first extraction component is connected to the first reaction component and the second reaction component respectively.

2. The temporal rapid thermal processing atomic layer deposition apparatus of claim 1, wherein, The transport component includes a conveyor belt, a conveyor wheel, and a drive motor. The two ends of the conveyor belt are wound around the corresponding sides of the conveyor wheel. The conveyor wheel is rotatably connected to the drive motor. The conveyor belt passes sequentially through the internal spaces of the first heating component, the second heating component, the first reaction component, and the second reaction component.

3. The temporal rapid thermal processing atomic layer deposition apparatus of claim 1, wherein, The first heating assembly includes: a first heating chamber, a first heater, and a first gate valve. The conveyor belt in the transport assembly passes through the openings at both ends of the first heating chamber and enters the internal space of the second heating assembly. The first heater is disposed on the inner wall of the first heating chamber. The first gate valve is disposed at the opening at the first end of the first heating chamber. The opening at the second end of the first heating chamber is connected to the internal space of the second heating assembly.

4. The temporal rapid thermal processing atomic layer deposition apparatus of claim 1, wherein, The second heating assembly includes a second heating chamber, a second heater, and a second gate valve. The conveyor belt in the transport assembly passes through the openings at both ends of the second heating chamber and enters the internal space of the first reaction assembly. The second heater is disposed on the inner wall of the second heating chamber. The second gate valve is disposed between the second end opening of the first heating chamber and the first end opening of the second heating chamber in the first heating assembly. The second end opening of the second heating chamber is connected to the internal space of the first reaction assembly.

5. The temporal rapid thermal processing atomic layer deposition apparatus of claim 1, wherein, The first reaction assembly includes a first reaction chamber, a third heater, and a third gate valve. The conveyor belt in the transport assembly passes through the openings at both ends of the first reaction chamber and enters the interior space of the second reaction assembly. The third heater is disposed on the inner wall of the first reaction chamber. The third gate valve is disposed between the second end opening of the second heating chamber in the second heating assembly and the first end opening of the first reaction chamber. The second end opening of the first reaction chamber connects to the interior space of the second reaction assembly.

6. The temporal rapid thermal processing atomic layer deposition apparatus of claim 1, wherein, The second reaction assembly includes a second reaction chamber, a fourth heater, a fourth gate valve, and a fifth gate valve. The conveyor belt in the transport assembly passes sequentially through the two end openings of the second reaction chamber. The fourth heater is disposed on the inner wall of the second reaction chamber. The fourth gate valve is disposed between the second end opening of the second heating chamber in the second heating assembly and the first end opening of the first reaction chamber in the first reaction assembly. The fifth gate valve is disposed at the second end opening of the second reaction chamber.

7. The temporal rapid thermal processing atomic layer deposition apparatus of claim 1, wherein, The precursor delivery assembly includes: a precursor source bottle, an inlet pipeline, a first inlet valve, and a second inlet valve. The precursor source bottle is connected to a first reaction chamber in the first reaction assembly and a second reaction chamber in the second reaction assembly via the inlet pipeline. The first inlet valve is located on the inlet pipeline between the precursor source bottle and the first reaction chamber, and the second inlet valve is located on the inlet pipeline between the precursor source bottle and the second reaction chamber.

8. The temporal rapid thermal processing atomic layer deposition apparatus of claim 1, wherein, The first extraction assembly includes a first pre-stage valve, a second pre-stage valve, and a first vacuum pump. The first vacuum pump is connected to a first heating chamber in the first heating assembly and a second heating chamber in the second heating assembly. The first pre-stage valve is disposed on a pipe between the first heating chamber and the first vacuum pump. The second pre-stage valve is disposed on a pipe between the second heating chamber and the first vacuum pump in the first extraction assembly.

9. The temporal rapid thermal processing atomic layer deposition apparatus of claim 1, wherein, The second extraction assembly includes a third fore-stage valve, a fourth fore-stage valve, and a second vacuum pump. The second vacuum pump is connected to the first reaction chamber in the first reaction assembly and the second reaction chamber in the second reaction assembly, respectively. The third fore-stage valve is disposed on the pipeline between the first reaction chamber and the second vacuum pump, and the fourth fore-stage valve is disposed on the pipeline between the second reaction chamber and the first vacuum pump.

10. The temporal rapid thermal processing atomic layer deposition apparatus of claim 1, wherein, Sample trays are provided in both the first heating chamber of the first heating assembly and the second heating chamber of the second heating assembly.

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