Thermal type atomic layer deposition device

Abstract

The utility model belongs to the technical field of atomic layer deposition, and relates to a thermal type atomic layer deposition device, which comprises a reaction chamber, a heating device and a heating device, the air pump is used for vacuumizing the interior of the reaction chamber; the sucking pump is connected with the reaction chamber; the gas detector is used for detecting gas in the reaction chamber; the gas detector is arranged in the reaction chamber; the controller is used for controlling the sucking pump according to a detection result of the gas detector; and the controller is respectively connected with the sucking pump and the gas detector. The thermal atomic layer deposition device provided by the utility model can detect the type and content of gas in the reaction chamber, and if the type or content of the gas is not required by reaction, the sucking pump is started to discharge the gas in the reaction chamber, so that the interference of foreign gas or excessive gas on normal reaction is reduced, and the generation of reaction impurities is reduced.

Description

Technical Field

[0001] This utility model relates to the field of atomic layer deposition technology, and in particular to a thermal atomic layer deposition apparatus. Background Technology

[0002] Nickel thin films possess outstanding advantages such as low resistivity, continuity, and uniformity. Traditionally, Ni thin films are deposited using physical vapor deposition (PVD). However, as device dimensions continue to shrink to 16 nanometers and below, traditional PVD methods are no longer sufficient. Compared to PVD, chemical vapor deposition (CVD) and atomic layer deposition (ALD) are the two most promising methods for depositing thin films of metals or metal compounds. CVD involves the simultaneous presence of precursors and reactants in a reaction chamber, under specific reaction conditions, resulting in deposition on the gas phase or substrate surface. Strictly speaking, ALD belongs to CVD technology. Unlike traditional CVD, ALD achieves layer-by-layer film growth by repeating two or more half-reactions. In ALD, each half-reaction precursor exists independently, and inert gases are used to purge between half-reactions. Furthermore, the reaction between the precursor and the substrate surface is self-limiting within each half-reaction cycle in ALD. This allows ALD to achieve film growth precise to atomic layer thickness within each cycle. In particular, this process, based on the principle of surface self-limiting chemisorption reaction of precursors, exhibits excellent conformal performance for surfaces with high aspect ratio pores and complex three-dimensional structures. Furthermore, ALD technology allows for precise control of film growth thickness by controlling the number of deposition cycles.

[0003] Atomic layer deposition (ALD) is a promising deposition method due to its excellent conformality and controllability of atomic thickness / composition. Researchers have investigated ALD processes for Co thin films using various Co precursors. For most Co precursors, plasma-enhanced ALD (PE-ALD) using NH3 plasma can produce pure Co films with low resistivity. For example, high-purity PE-ALD Co films with resistivity as low as 10 μcm were deposited using CoCp2 (dicyclopentadienylcobalt) and NH3 plasma. However, using H2 plasma yielded Co films heavily contaminated with C, indicating that the selection of an appropriate reducing agent is crucial for obtaining high-quality Co thin films.

[0004] ALD technology has been successfully applied to thin film deposition processes for various materials. For nickel deposition using ALD, plasma hydrogen reduction (PHD) is the primary method. While the high reactivity of plasma hydrogen significantly reduces deposition temperature, its high reactivity also means that the hydrogen may recombine before entering the trench, resulting in poor coating in high aspect ratio trenches. Furthermore, the safe storage and use of hydrogen pose numerous inconveniences to the entire process. Currently, the precursors required for nickel thin film deposition using ALD are all solid materials, such as nickel hexafluoroacetylacetone, nickel tetramethylheptanedione, imidium nickel, and nickel dicerocene. These precursors have poor volatility and are prone to condensation, clogging manual valves and other components.

[0005] Alternating current deposition (ALD) technology has been successfully applied to thin film deposition processes for various materials. However, for depositing metallic copper thin films, several problems exist, making it difficult to achieve satisfactory results. A key reason is the low atom aggregation temperature of copper, while the existing copper thin film deposition temperature is higher than the atom aggregation temperature. This results in a granular appearance of the deposited copper film, affecting its performance. The deposition of metallic Cu using ALD technology mainly involves plasma hydrogen reduction of copper precursors—the high reactivity of plasma hydrogen can significantly reduce the deposition temperature. However, due to its high reactivity, these precursors may recombine before entering the trench, ultimately leading to poor coating effects in high aspect ratio trench deposition. Furthermore, the safe storage and use of hydrogen brings many inconveniences to the entire process.

[0006] During atomic layer deposition, the type or amount of gas in the reaction chamber may not be what the reaction requires, which can lead to the formation of impurities in the reactants, thus requiring improvement. Utility Model Content

[0007] In view of this, the present invention provides a thermal atomic layer deposition apparatus.

[0008] Specifically, this utility model is achieved through the following technical solution:

[0009] According to a first aspect of the present invention, a thermal atomic layer deposition apparatus is provided, comprising:

[0010] A reaction chamber, used to provide space for the reaction;

[0011] A vacuum pump is used to create a vacuum inside the reaction chamber; the vacuum pump is connected to the reaction chamber.

[0012] A gas detector is used to detect the gas inside the reaction chamber; the gas detector is installed inside the reaction chamber.

[0013] A controller is used to control the air pump based on the detection results of the gas detector; the controller is connected to both the air pump and the gas detector.

[0014] Optionally, it further includes: a one-way valve, which is connected to the reaction chamber and the vacuum pump respectively, and the one-way valve only allows gas to flow from the reaction chamber to the vacuum pump.

[0015] Optionally, it further includes an air inlet pipe connected to the reaction chamber.

[0016] Optionally, it further includes a gas regulating valve, which is disposed on the air inlet pipe.

[0017] Optionally, it further includes a feed pipe connected to the reaction chamber.

[0018] Optionally, it further includes a feed regulating valve, which is disposed on the feed pipe.

[0019] Optionally, it further includes an inert gas delivery pipe connected to the reaction chamber.

[0020] Optionally, it further includes an inert gas regulating valve, which is disposed on the inert gas delivery pipe.

[0021] Optionally, it further includes: a recycling pipe, the first end of which is connected to the solid output end of the vacuum pump, and the second end of which is connected to the reaction chamber.

[0022] Optionally, it also includes a flow meter, which is disposed on the recycling pipe.

[0023] The technical solution provided by this utility model brings at least the following beneficial effects:

[0024] The thermal atomic layer deposition apparatus provided in this application can detect the type and content of gas in the reaction chamber. If the type or content of gas is not required for the reaction, the gas pump is turned on to discharge the gas in the reaction chamber, thereby reducing the interference of impurity gas or excess gas on the normal reaction and reducing the generation of reaction impurities. Attached Figure Description

[0025] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with the present invention and, together with the description, serve to explain the principles of the present invention.

[0026] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the drawings used in the description of the embodiments or related technologies will be briefly introduced below. Obviously, for those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0027] Figure 1 A schematic diagram of the structure of a thermal atomic layer deposition apparatus provided in Embodiment 1 of this utility model;

[0028] Figure 2 This is a schematic diagram of Embodiment 2 of a thermal atomic layer deposition apparatus provided for an embodiment of the present invention. Detailed Implementation

[0029] To make the objectives, technical solutions, and advantages of the embodiments of this utility model clearer, the technical solutions of the embodiments of this utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this utility model. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the protection scope of this utility model.

[0030] Figure 1 A thermal atomic layer deposition apparatus suitable for embodiments of the present invention is illustrated schematically.

[0031] Reference Figure 1-2 As shown, this application provides a thermal atomic layer deposition apparatus, comprising:

[0032] Reaction chamber 1 is used to provide reaction space;

[0033] A vacuum pump 2 is used to create a vacuum inside the reaction chamber 1; the vacuum pump 2 is connected to the reaction chamber 1.

[0034] Gas detector 3 is used to detect the gas in the reaction chamber 1; the gas detector 3 is installed inside the reaction chamber 1.

[0035] The controller 13 is used to control the vacuum pump 2 according to the detection result of the gas detector 3; the controller 13 is connected to the vacuum pump 2 and the gas detector 3 respectively.

[0036] In this embodiment, the gas detector 3 detects the gas in the reaction chamber 1, primarily to determine if the type of gas is required for the reaction, and also to determine if the gas concentration exceeds the required concentration. If the gas type is not required for the reaction, the controller 13 controls the vacuum pump 2 to start working, and the vacuum pump 2 extracts the gas from the reaction chamber 1 and discharges it. If the gas concentration exceeds the concentration required for the reaction, the controller 13 controls the vacuum pump 2 to start working, and the vacuum pump 2 extracts the gas from the reaction chamber 1 and discharges it until the gas concentration is reduced to the concentration required for the reaction. At this point, the controller 13 controls the vacuum pump 2 to stop working.

[0037] For example, a thermal atomic layer deposition apparatus provided in this application further includes: a one-way valve 4, which is connected to the reaction chamber 1 and the vacuum pump 2 respectively, and the one-way valve 4 only allows gas to flow from the reaction chamber 1 to the vacuum pump 2.

[0038] In this embodiment of the application, when gas is discharged from the reaction chamber 1 to the outside via the vacuum pump 2, in order to prevent gas from flowing back from the vacuum pump 2 to the reaction chamber 1, a one-way valve 4 is provided. The one-way valve 4 only allows gas to flow from the reaction chamber 1 to the vacuum pump 2, but does not allow gas to flow from the vacuum pump 2 to the reaction chamber 1.

[0039] For example, a thermal atomic layer deposition apparatus provided in this application further includes an air inlet pipe 5, which is connected to the reaction chamber 1.

[0040] In this embodiment, the air inlet pipe 5 is used to input reaction gas into the reaction chamber 1.

[0041] For example, a thermal atomic layer deposition apparatus provided in this application further includes a gas regulating valve 6, which is disposed on the gas inlet pipe 5.

[0042] In this embodiment, the gas regulating valve 6 is used to control the opening and closing of the air inlet pipe 5 and the opening degree, thereby changing the reaction gas entering the reaction chamber 1 through the air inlet pipe 5.

[0043] For example, a thermal atomic layer deposition apparatus provided in this application further includes a feed pipe 7, which is connected to the reaction chamber 1.

[0044] In this embodiment, the feed pipe 7 is used to input the reaction solid / liquid raw materials into the reaction chamber 1.

[0045] For example, a thermal atomic layer deposition apparatus provided in this application further includes a feed regulating valve 8, which is disposed on the feed pipe 7.

[0046] In this embodiment, the feed regulating valve 8 is used to control the opening and closing of the feed pipe 7 and the size of its opening, thereby changing the reaction solid / liquid raw materials entering the reaction chamber 1 through the feed pipe 7.

[0047] For example, a thermal atomic layer deposition apparatus provided in this application further includes an inert gas delivery pipe 9, which is connected to the reaction chamber 1.

[0048] In this embodiment of the application, since the pressure inside the reaction chamber 1 will increase after the gas is discharged by the vacuum pump 2, the possibility of failure of the reaction chamber 1 will increase. Therefore, it is advisable to add inert gas to the reaction chamber 1. On the one hand, the inert gas can reduce the pressure inside the reaction chamber 1 and reduce the possibility of failure of the reaction chamber 1; on the other hand, the inert gas does not react with the reaction gas and the reaction raw materials.

[0049] For example, a thermal atomic layer deposition apparatus provided in this application further includes an inert gas regulating valve 10, which is disposed on the inert gas delivery pipe 9.

[0050] In this embodiment, the inert gas regulating valve 10 is used to control the opening and closing of the inert gas delivery pipe 9 and the opening degree, thereby changing the inert gas entering the reaction chamber 1 through the inert gas delivery pipe 9.

[0051] For example, the thermal atomic layer deposition apparatus provided in this application further includes: a recycling pipe 11, the first end of which is connected to the solid output end of the vacuum pump 2, and the second end of which is connected to the reaction chamber 1.

[0052] In this embodiment, when the vacuum pump 2 draws gas, some of the reaction materials are also carried in the gas. If the gas is discharged directly, these reaction materials will also be discharged, resulting in waste. Therefore, it is advisable to consider recycling these reaction materials. The solid output end of the vacuum pump 2 will collect the reaction materials carried in the discharged gas. These reaction materials are recycled back to the reaction chamber 1 for reuse via the recycling pipe 11.

[0053] For example, a thermal atomic layer deposition apparatus provided in this application further includes a flow meter 12, which is disposed on the recycling pipe 11.

[0054] In this embodiment, the flow meter 12 is used to detect the reaction raw materials that flow back to the reaction chamber 1 via the recycling pipe 11, so as to facilitate the statistics and calculation of the generated reactants and the amount of reaction raw materials that need to be replenished via the feed pipe 7.

[0055] The thermal atomic layer deposition apparatus provided in this application can detect the type and content of gas in the reaction chamber. If the type or content of gas is not required for the reaction, the gas pump is turned on to discharge the gas in the reaction chamber, thereby reducing the interference of impurity gas or excess gas on the normal reaction and reducing the generation of reaction impurities.

[0056] It should be noted that in this application, the terms "upper," "lower," "left," "right," "front," "rear," "top," "bottom," "inner," "outer," "vertical," "horizontal," "lateral," and "longitudinal" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. These terms are mainly for the purpose of better describing this application and its embodiments, and are not intended to limit the indicated device, element, or component to having a specific orientation, or to be constructed and operated in a specific orientation.

[0057] Furthermore, in addition to indicating location or positional relationship, some of the aforementioned terms may also have other meanings. For example, the term "above" may also be used in some cases to indicate a certain dependency or connection relationship. Those skilled in the art can understand the specific meaning of these terms in this application based on the specific circumstances.

[0058] Furthermore, the terms "installation," "setup," "equipped with," "connection," and "linked" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral structure; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium, or an internal connection between two devices, components, or parts. Those skilled in the art can understand the specific meaning of these terms in this application based on the specific circumstances.

[0059] Furthermore, the terms "first," "second," etc., are primarily used to distinguish different devices, components, or parts (which may be the same or different in specific type and construction), and are not intended to indicate or imply the relative importance or quantity of the indicated devices, components, or parts. Unless otherwise stated, "a plurality of" means two or more.

[0060] The above description is merely a specific embodiment of the present invention, enabling those skilled in the art to understand or implement the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features claimed herein.

Claims

1. A thermal atomic layer deposition apparatus, characterized by, include: A reaction chamber, used to provide space for the reaction; A vacuum pump is used to create a vacuum inside the reaction chamber. The air pump is connected to the reaction chamber; A gas detector is used to detect the gas inside the reaction chamber; the gas detector is installed inside the reaction chamber. A controller is used to control the air pump based on the detection results of the gas detector; the controller is connected to both the air pump and the gas detector.

2. The thermal-type atomic layer deposition apparatus according to claim 1, wherein Also includes: A one-way valve is provided, which is connected to the reaction chamber and the vacuum pump respectively. The one-way valve only allows gas to flow from the reaction chamber to the vacuum pump.

3. The thermal ALD apparatus according to claim 1, wherein Also includes: An air intake pipe is connected to the reaction chamber.

4. The thermal ALD apparatus according to claim 3, wherein Also includes: A gas regulating valve is disposed on the air inlet pipe.

5. The thermal ALD apparatus according to claim 1, wherein Also includes: A feed pipe is connected to the reaction chamber.

6. The thermal ALD apparatus according to claim 5, wherein Also includes: A feed regulating valve is provided on the feed pipe.

7. The thermal ALD apparatus according to claim 1, wherein Also includes: An inert gas delivery pipe is connected to the reaction chamber.

8. The thermal ALD apparatus according to claim 7, wherein Also includes: An inert gas regulating valve is disposed on the inert gas delivery pipe.

9. The thermal ALD apparatus according to claim 1, wherein Also includes: A recycling pipe, the first end of which is connected to the solid output end of the vacuum pump, and the second end of which is connected to the reaction chamber.

10. The thermal atomic layer deposition apparatus according to claim 9, wherein Also includes: A flow meter is installed on the recycling pipe.

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