Laminated busbar adaptive to packaging of various power semiconductors

Abstract

The utility model provides a laminated busbar adaptive to packaging of various power semiconductors, comprising a laminated busbar body which comprises an anode busbar and a cathode busbar which are arranged in a laminated manner; the connection terminal is connected with the laminated busbar body and the power semiconductor device; the capacitor is located on one side of the laminated busbar, the negative busbar is connected with a negative terminal of the capacitor, a receding hole is formed in the negative busbar, the positive busbar protrudes outwards in the direction close to the capacitor to form a protruding point, the protruding point is connected with a positive terminal of the capacitor through the receding hole, and the capacitor is connected with the negative busbar. The laminated busbar body is connected with the capacitor positive terminal through the structure of the laminated busbar body, no additional connecting structure is needed for connection, the connecting steps are simplified, and therefore the assembling efficiency is improved.

Description

Technical Field

[0001] This application relates to the technical field of stacked busbars, and more particularly to a stacked busbar that is compatible with various power semiconductor packages. Background Technology

[0002] Multilayer busbars are widely used as connection components between converter buses and power semiconductor devices. They effectively reduce stray inductance and provide good suppression of turn-off voltage spikes, thereby increasing the operational stability of power semiconductor devices. These multilayer busbars are connected to capacitors for energy storage. The positive terminal of the capacitor is typically connected to the multilayer busbar via a connection terminal, which is cumbersome to install and has low connection efficiency. Utility Model Content

[0003] In view of this, the purpose of this application is to propose a stacked busbar that is compatible with various power semiconductor packages, so as to solve the problem of low efficiency in connecting the stacked busbar and capacitor through connection terminals.

[0004] A multilayer busbar adaptable to various power semiconductor packages, comprising:

[0005] The stacked busbar body includes a positive busbar and a negative busbar stacked together;

[0006] A connection terminal, wherein the connection terminal connects the stacked busbar body and the power semiconductor device;

[0007] A capacitor is located on one side of the stacked busbar. The negative busbar is connected to the negative terminal of the capacitor. The negative busbar is provided with a clearance hole. The positive busbar protrudes outward toward the capacitor to form a protrusion. The protrusion is connected to the positive terminal of the capacitor through the clearance hole.

[0008] Optionally, the stacked busbar body further includes a first insulating layer, a second insulating layer, and a third insulating layer, wherein the first insulating layer, the positive busbar, the second insulating layer, the negative busbar, and the third insulating layer are stacked.

[0009] Optionally, the connection terminals include a positive connection terminal and a negative connection terminal. One end of the positive busbar is connected to a negative power terminal, and the other end is connected to the positive connection terminal. One end of the negative busbar is connected to a positive power terminal, and the other end is connected to the negative connection terminal. The negative power terminal and the positive power terminal are located on one side of the stacked busbar body, and the positive connection terminal and the negative connection terminal are located on the other side of the stacked busbar body.

[0010] Optionally, the third insulating layer is provided with an insulating hole, the negative terminal of the capacitor passes through the insulating hole and is connected to the negative busbar, the clearance hole is a through hole that passes through the second insulating layer, the negative busbar and the third insulating layer in sequence, and the protrusion is connected to the positive terminal of the capacitor through the through hole.

[0011] Optionally, multiple capacitors are provided, and a mounting base is installed at the end of each capacitor that is away from the stacked busbar body.

[0012] Optionally, a first positioning post and a second positioning post are respectively provided on both sides of the second insulating layer. The first insulating layer and the positive busbar are provided with a first positioning groove that is connected. The first positioning post is inserted into the first positioning groove. The second insulating layer and the negative busbar are provided with a second positioning groove that is connected. The second positioning post is inserted into the second positioning groove.

[0013] Optionally, both the first positioning post and the second positioning post are square structures, and both the first positioning groove and the second positioning groove are square grooves.

[0014] Optionally, the first insulating layer, the positive busbar, the second insulating layer, the negative busbar, and the third insulating layer are connected by heat-resistant insulating adhesive.

[0015] Optionally, the second insulating layer is an epoxy resin insulating layer.

[0016] As described above, this application provides a multilayer busbar adapted to various power semiconductor packages, comprising: a multilayer busbar body, connecting terminals, and capacitors. The connecting terminals connect to the multilayer busbar body and are configured in various ways to connect power semiconductor devices with different package structures, including EconoDUAL, EconoPACK, HybridPACKDSC, PrimePACK, EasyPIM, EasyPACK, and XHP packages, thus improving the versatility of the multilayer busbar and enhancing its ease of use and efficiency. Furthermore, in addition to connecting molded power semiconductor devices, the connecting terminals can also be directly connected to an external PCB board. The PCB board can be designed with relevant functions according to specific needs, further expanding the versatility of the multilayer busbar. A capacitor-connected multilayer busbar is used to store charge. The capacitor is located on the side closest to the negative busbar. The end of the capacitor closest to the negative busbar has a negative terminal and a positive terminal. The negative terminal of the capacitor directly abuts against the connection point on the negative busbar to connect to the negative busbar. The positive busbar has a protrusion that directly abuts against the positive terminal of the capacitor through a clearance hole on the negative busbar, thus achieving the connection between the positive busbar and the capacitor. This multilayer busbar achieves connection to the positive terminal of the capacitor through its own structure, eliminating the need for additional connection structures, simplifying the connection process, and thus improving assembly efficiency. Attached Figure Description

[0017] To more clearly illustrate the technical solutions in this application or related technologies, the drawings used in the description of the embodiments or related technologies will be briefly introduced below. Obviously, the drawings described below are only embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0018] Figure 1 This is a schematic diagram showing the structure of the stacked busbar body according to an embodiment of this application;

[0019] Figure 2 This is a schematic diagram showing the structure of the connection terminal in an embodiment of this application;

[0020] Figure 3 This is a schematic diagram of the structure of the positive terminal of the power supply according to an embodiment of this application;

[0021] Figure 4 for Figure 3 Enlarged view of section A in the middle;

[0022] Figure 5 for Figure 3 Enlarged view of section B;

[0023] Figure 6 This application provides a schematic diagram showing the structure of the first positioning post and the second positioning post according to an embodiment.

[0024] Figure 7 This is a schematic diagram showing the flow of current through the stacked busbars and capacitors between the IGBT ports.

[0025] Figure 8 This is a current distribution diagram for the stacked busbars;

[0026] Figure 9 This is a diagram showing the current flow direction of the stacked busbar.

[0027] Reference numerals: 1. Laminated busbar body; 11. First insulating layer; 12. Positive busbar; 121. Negative power supply terminal; 13. Second insulating layer; 14. Negative busbar; 141. Clearance hole; 1411. Through hole; 142. Positive power supply terminal; 15. Third insulating layer; 151. Insulating hole; 2. Connecting terminal; 21. Positive connecting terminal; 22. Negative connecting terminal; 23. Power semiconductor device; 3. Capacitor; 31. Positive terminal; 32. Negative terminal; 4. Protrusion; 51. First mounting hole; 511. Second mounting hole; 6. Mounting base; 7. First positioning post; 8. Second positioning post; 9. First positioning groove; 91. Second positioning groove. Detailed Implementation

[0028] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with specific embodiments and the accompanying drawings.

[0029] It should be noted that, unless otherwise defined, the technical or scientific terms used in the embodiments of this application should have the ordinary meaning understood by one of ordinary skill in the art to which this application pertains. The terms "first," "second," and similar terms used in the embodiments of this application do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Terms such as "comprising" or "including" mean that the element or object preceding the word encompasses the elements or objects listed after the word and their equivalents, without excluding other elements or objects. Terms such as "connected" or "linked" are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. Terms such as "upper," "lower," "left," and "right" are only used to indicate relative positional relationships; when the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0030] As described in the background technology, in power electronic systems, the converter, as the core component of energy conversion, directly affects the overall system performance in terms of stability and efficiency. As an advanced connection component, the laminated busbar plays a crucial role in this field. It is not only widely used between the converter bus and power semiconductor devices as a bridge for power transmission, but also possesses a series of unique advantages, which significantly improve the performance of power electronic systems.

[0031] Multilayer busbars are constructed by stacking multiple layers of conductive materials together through precise processing and assembly, forming a connection structure with low stray inductance. This structure effectively reduces stray inductance generated during current transmission, thereby reducing electromagnetic interference and improving system stability and efficiency. The advantages of multilayer busbars are particularly pronounced in high-frequency switching applications, as they can significantly suppress voltage spikes generated when power semiconductor devices are turned off, protecting the devices from damage and extending their lifespan.

[0032] In practical applications, laminated busbars are typically used in conjunction with capacitors to form a complete energy storage and transmission system. Capacitors, as energy storage components, play a crucial role in power electronic systems, rapidly providing or absorbing electrical energy when needed by the converter, thus maintaining stable system operation. However, traditional capacitor connection methods often suffer from cumbersome installation and low efficiency. To address these issues, the positive terminal of the capacitor is usually connected to the laminated busbar via a dedicated connection terminal.

[0033] However, this connection method still has certain limitations. The introduction of connection terminals increases the complexity and cost of the system, and may also introduce additional resistance and inductance, affecting system performance.

[0034] The following is in conjunction with the appendix Figure 1-9 The embodiments of this application will be described in detail below.

[0035] like Figure 1 , Figure 2 , Figure 3 , Figure 4 and Figure 5 As shown, a stacked busbar adapted to various power semiconductor packages includes:

[0036] The stacked busbar body 1 includes a positive busbar 12 and a negative busbar 14 stacked together;

[0037] Connection terminal 2, which connects the stacked busbar body 1 and the power semiconductor device 23;

[0038] Capacitor 3 is located on one side of the stacked busbar body 1. The negative busbar 14 is connected to the negative terminal 32 of the capacitor 3. The negative busbar 14 is provided with a clearance hole 141. The positive busbar 12 protrudes outward in the direction close to the capacitor 3 to form a protrusion 4. The protrusion 4 is connected to the positive terminal 31 of the capacitor 3 through the clearance hole 141.

[0039] Specifically, connection terminals 2 are configured in multiple ways to connect power semiconductor devices 23 with different package structures, including EconoDUAL, EconoPACK, HybridPACK DSC, PrimePACK, EasyPIM, EasyPACK, and XHP packages. This improves the versatility of the stacked busbar, as well as its ease of use and efficiency. Furthermore, in addition to connecting molded power semiconductor devices 23, connection terminals 2 can also be directly connected to an external PCB board. The PCB board can be designed with relevant functions according to specific needs, further expanding the versatility of the stacked busbar. Capacitor 3 is connected to the stacked busbar and used to store charge. Capacitor 3 is a film capacitor so that after the power supply connected to the stacked busbar is disconnected, the film capacitor can further discharge to the power semiconductor devices. Capacitor 3 is located on the side near the negative busbar 14. The end of capacitor 3 near the negative busbar 14 has a negative terminal 32 and a positive terminal 31. In this embodiment, the negative terminal 32 of capacitor 3 directly abuts against the connection point on the negative busbar 14 to connect to the negative busbar 14. The positive busbar 12 has a protrusion 4, which serves as the connection point for the positive busbar 12. This protrusion 4 is formed by stamping the positive busbar 12. The protrusion 4 directly abuts against the positive terminal 31 of capacitor 3 through a clearance hole 141 on the negative busbar 14, thus achieving the connection between the positive busbar 12 and capacitor 3. This stacked busbar body 1 achieves connection with the positive terminal of capacitor 3 through its own structure, eliminating the need for additional connection structures, simplifying the connection steps, and thus improving assembly efficiency.

[0040] In some embodiments, such as Figure 4 and Figure 5 As shown, the stacked busbar body 1 also includes a first insulating layer 11, a second insulating layer 13 and a third insulating layer 15, wherein the first insulating layer 11, the positive busbar 12, the second insulating layer 13, the negative busbar 14 and the third insulating layer 15 are stacked.

[0041] Furthermore, the first insulating layer 11, the positive busbar 12, the second insulating layer 13, the negative busbar 14, and the third insulating layer 15 are connected by heat-resistant insulating adhesive. The second insulating layer 13 is an epoxy resin insulating layer. The first insulating layer 11 and the third insulating layer 15 are PET insulating layers.

[0042] Specifically, the positive busbar 12 and negative busbar 14 can be supported by high-conductivity copper alloy or aluminum composite materials to reduce resistance and heat generation. The surfaces of the positive busbar 12 and negative busbar 14 can be plated with gold or silver to improve their conductivity and oxidation resistance. The heat-resistant insulating adhesive can be a high-performance polyurethane adhesive, which, in addition to its insulation and heat resistance, also has good adhesion to enhance the robustness of the laminated busbar body 1.

[0043] In this embodiment, the multiple insulating layers in the laminated busbar reduce the risk of electrical short circuits and electrical leakage between the positive busbar 12 and the negative busbar 14, thereby improving the safety of the laminated busbar. Heat-resistant insulating adhesive is used to bond the first insulating layer 11, the positive busbar 12, the second insulating layer 13, the negative busbar 14, and the third insulating layer 15 together. This not only provides additional insulation protection for the laminated busbar body 1 but also ensures a tight fit between the layers, preventing electrical short circuits and mechanical loosening. The first insulating layer 11 and the third insulating layer 15 are PET insulating layers. PET insulating layers are stable and can be used for extended periods at high temperatures without performance degradation. PET insulating layers also possess good insulation and flame retardancy, further enhancing the safety of the laminated busbar body 1. The second insulating layer 13 is an epoxy resin insulating layer. The epoxy resin insulating layer has excellent insulation performance, mechanical strength and heat resistance, as well as good breakdown resistance, preventing the positive busbar 12 and the negative busbar 14 from being electrically connected, thereby further improving the safety of the laminated busbar body 1.

[0044] In some embodiments, the connection terminal 2 includes a positive connection terminal 21 and a negative connection terminal 22. One end of the positive busbar 12 is connected to a power negative terminal 121, and the other end is connected to the positive connection terminal 21. One end of the negative busbar 14 is connected to a power positive terminal 142, and the other end is connected to the negative connection terminal 22. The power negative terminal 121 and the power positive terminal 142 are located on one side of the stacked busbar body 1, and the positive connection terminal 21 and the negative connection terminal 22 are located on the other side of the stacked busbar body 1.

[0045] Specifically, the positive busbar 12 and the negative busbar 14 are connected to the power supply via the negative power terminal 121 and the positive power terminal 142, respectively, and are also connected to the power semiconductor device 23 via the positive connection terminal 21 and the negative connection terminal 22, ensuring the continuity and reliability of the electrical connection. Furthermore, the negative power terminal 121 and the positive power terminal 142 are located on one side of the laminated busbar body 1, while the positive connection terminal 21 and the negative connection terminal 22 are located on the other side, achieving a compact laminated busbar structure, improving space utilization, and making the entire laminated busbar structure more compact and efficient.

[0046] In some embodiments, such as Figure 4 and Figure 5 As shown, the third insulating layer 15 is provided with an insulating hole 151. The negative terminal 32 of the capacitor 3 passes through the insulating hole 151 and is connected to the negative busbar 14. The clearance hole 141 is a through hole 1411 that passes through the second insulating layer 13, the negative busbar 14 and the third insulating layer 15 in sequence. The protrusion 4 is connected to the positive terminal 31 of the capacitor 3 through the through hole 1411.

[0047] Specifically, the first insulating layer 11, the positive busbar 12, and the second insulating layer 13 are also provided with a communicating first mounting hole 51. The first mounting hole 51 is positioned opposite to the insulating hole 151. The negative terminal 32 and the negative busbar 14 of the capacitor 3 are fixed by a connector to improve the stability of the connection. The connector can be a connecting bolt. The first mounting hole facilitates the passage of the connecting bolt to fix the negative terminal 32 and the negative busbar 14 of the capacitor 3. The first insulating layer 11 is also provided with a second mounting hole 511. The second mounting hole 511 is positioned opposite to the clearance hole 141. The positive terminal 31 and the protrusion 4 of the capacitor 3 are fixed by a connector. The connector can be a connecting bolt. The second mounting hole 511 facilitates the passage of the connecting bolt to fix the positive terminal 31 and the positive busbar 12 of the capacitor 3. In addition, the first mounting hole 51 and the second mounting hole 511 facilitate the passage of the connecting bolt, improve the installation efficiency of the capacitor 3, and facilitate the subsequent maintenance and replacement of the capacitor 3.

[0048] In this embodiment, by providing an insulating hole 151 on the third insulating layer 15, the negative terminal 32 of the capacitor 3 can pass through the insulating hole 151 and be connected to the negative busbar 14. The clearance hole 141 is set as a through hole 1411 that passes through the second insulating layer 13, the negative busbar 14 and the third insulating layer 15, so that the protrusion 4 can be connected to the positive terminal 31 of the capacitor 3 through the through hole 1411.

[0049] In some embodiments, such as Figure 1 As shown, multiple capacitors 3 are configured, and a mounting base 6 is installed at the end of each capacitor 3 that is away from the stacked busbar body 1.

[0050] Specifically, the bottom of the capacitor 3 is provided with a plug rod, and the mounting base 6 is provided with a plug hole. The plug rod and the plug hole are plugged in. The capacitors 3 are arranged in a row, and the plug hole and the plug rod cooperate to realize the initial installation and top installation of the capacitor 3.

[0051] In this embodiment, the mounting base 6 is used to mount the capacitor 3, making the structure of the stacked busbar more complete and compact, thereby improving the portability of the stacked busbar.

[0052] In some embodiments, such as Figure 5 and Figure 6 As shown, the second insulating layer 13 has a first positioning post 7 and a second positioning post 8 on both sides, the first insulating layer 11 and the positive busbar 12 have a first positioning groove 9 that is connected, the first positioning post 7 is inserted into the first positioning groove 9, the third insulating layer 15 and the negative busbar 14 have a second positioning groove 91 that is connected, the second positioning post 8 is inserted into the second positioning groove 91.

[0053] In addition, both the first positioning post 7 and the second positioning post 8 are square structures, and both the first positioning groove 9 and the second positioning groove 91 are square grooves.

[0054] Specifically, the first positioning post 7 and the second positioning post 8 are positioned opposite each other, located at one corner of the stacked busbar body 1. The first positioning post 7 is inserted into the first positioning groove 9, and the second positioning post 8 is inserted into the second positioning groove 91. This ensures that the layers of the stacked busbar body 1 are precisely aligned during stacking, so that the through holes 1411 on the second insulating layer 13, the negative busbar 14, and the third insulating layer 15 are aligned to form clearance holes 141. At the same time, it ensures that the protrusion 4 does not contact the inner wall of the clearance hole 141 on the negative busbar 14, preventing electrical connection between the positive busbar 12 and the negative busbar 14, which would affect the normal use of the positive busbar 12. The square structure of the positioning posts and positioning grooves can prevent the layers of the stacked busbar from rotating or shifting after stacking, thereby improving the assembly accuracy and stability of the stacked busbar.

[0055] In this utility model, such as Figure 7 As shown, exemplarily, current flows through the laminated busbar from one IGBT port to the negative terminal Source1 of a capacitor, and then through the positive terminal Source2 of a capacitor into the other port Source4 of the IGBT. This embodiment uses finite element simulation software to simulate this electrical performance, obtaining the current distribution diagram and current flow diagram of the laminated busbar. Figure 8 and Figure 9 The stray inductance between the capacitor and the IGBT is also shown in Table 1. Table 1 shows the stray inductance values ​​of the stacked busbar simulation. The stacked busbar in this application is composed of an outer insulating layer (first insulating layer 11 and third insulating layer 15), positive and negative busbars, and an intermediate insulating layer (second insulating layer 12) that are tightly stacked. The structure has N pairs of terminals at the center for mounting multiple sets of capacitors. This rational structural design can effectively reduce the stray influence of parasitic inductance. In addition, the stray inductance of the structure is further reduced by the selection of the stacked busbar material, the rational layout of the capacitors, and the selection of the capacitor material. The stray inductance of the structure is calculated by finite element simulation software. The simulation results show that the stray inductance of the structure can reach 10nH, which well reflects the advantage of the stacked busbar structure with low parasitic inductance.

[0056] Table 1. Stray inductance values ​​of the stacked busbar simulation

[0057]

[0058] The beneficial effects of this utility model are as follows:

[0059] 1. The connection terminal 2 is configured in multiple ways to connect power semiconductor devices 23 with different package structures, including EconoDUAL, EconoPACK, HybridPACK DSC, PrimePACK, EasyPIM, EasyPACK, XHP, etc., which improves the versatility of the stacked busbar and enhances its ease of use and efficiency. In addition, the connection terminal 2 can not only connect molded power semiconductor devices 23, but also directly connect to an external PCB board. The PCB board can be designed with relevant functions according to its own needs, further expanding the versatility of the stacked busbar.

[0060] 2. Capacitor 3 is connected to the stacked busbar for storing charge. Capacitor 3 is located on the side near the negative busbar 14. The end of capacitor 3 near the negative busbar 14 has a negative terminal 32 and a positive terminal 31. In this embodiment, the negative terminal 32 of capacitor 3 directly abuts against the connection point on the negative busbar 14 to connect to the negative busbar 14. The positive busbar 12 has a protrusion 4, which is the connection point of the positive busbar 12. It is formed by stamping the positive busbar 12. The protrusion 4 directly abuts against the positive terminal 31 of capacitor 3 through the clearance hole 141 on the negative busbar 14 to realize the connection between the positive busbar 12 and capacitor 3. The stacked busbar body 1 achieves the connection with the positive terminal of capacitor 3 through its own structure, without the need for an additional connection structure, simplifying the connection steps and thus improving assembly efficiency.

[0061] 3. The first positioning post 7 is inserted into the first positioning groove 9, and the second positioning post 8 is inserted into the second positioning groove 91. This ensures that each layer of the stacked busbar body 1 can be precisely aligned during stacking, so that the through holes 1411 on the second insulating layer 13, the negative busbar 14, and the third insulating layer 15 are aligned to form clearance holes 141. At the same time, it ensures that the protrusion 4 does not contact the inner wall of the clearance hole 141 on the negative busbar 14, avoiding electrical connection between the positive busbar 12 and the negative busbar 14, which would affect the normal use of the positive busbar 12. The square structure of the positioning posts and positioning grooves can prevent the layers from rotating or shifting after stacking, improving the assembly accuracy and stability.

[0062] 4. This utility model reduces the stray inductance of the structure through the rational design of the stacked busbar structure, the selection of the stacked busbar material, the rational layout of the capacitors, and the selection of the capacitor material. The stray inductance of the structure is calculated by finite element simulation software. The simulation results show that the stray inductance of the structure can reach 10nH. This result well reflects the advantage of the stacked busbar structure with low parasitic inductance.

[0063] Those skilled in the art should understand that the discussion of any of the above embodiments is merely exemplary and is not intended to imply that the scope of this application is limited to these examples; under the concept of this application, the technical features of the above embodiments or different embodiments can also be combined, the steps can be implemented in any order, and there are many other variations of different aspects of the embodiments of this application as described above, which are not provided in detail for the sake of brevity.

[0064] Additionally, to simplify the description and discussion, and to avoid obscuring the embodiments of this application, the well-known power / ground connections to integrated circuit chips and other components may or may not be shown in the provided drawings. Furthermore, the apparatus may be shown in block diagram form to avoid obscuring the embodiments of this application, and this also takes into account the fact that the details of the implementation of these block diagram apparatuses are highly dependent on the platform on which the embodiments of this application will be implemented (i.e., these details should be fully understood by those skilled in the art). While specific details (e.g., circuits) have been set forth to describe exemplary embodiments of this application, it will be apparent to those skilled in the art that the embodiments of this application can be implemented without these specific details or with variations thereof. Therefore, these descriptions should be considered illustrative rather than restrictive.

[0065] Although this application has been described in conjunction with specific embodiments thereof, many substitutions, modifications, and variations of these embodiments will be apparent to those skilled in the art from the foregoing description. For example, other memory architectures may use the embodiments discussed.

[0066] The embodiments of this application are intended to cover all such substitutions, modifications, and variations that fall within the broad scope of the claims of this application. Therefore, any omissions, modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the embodiments of this application should be included within the protection scope of this application.

Claims

1. A laminated busbar adapted to multiple power semiconductor packages, characterized by, include: The stacked busbar body (1) includes a positive busbar (12) and a negative busbar (14) stacked together; Connection terminal (2), the connection terminal (2) connects the stacked busbar body (1) and the power semiconductor device (23); The capacitor (3) is located on one side of the stacked busbar body (1). The negative busbar (14) is connected to the negative terminal (32) of the capacitor (3). The negative busbar (14) is provided with a clearance hole (141). The positive busbar protrudes outward towards the capacitor (3) to form a protrusion (4). The protrusion (4) is connected to the positive terminal (31) of the capacitor (3) through the clearance hole (141).

2. The laminated busbar suitable for adapting various power semiconductor packages according to claim 1, wherein, The stacked busbar body (1) further includes a first insulating layer (11), a second insulating layer (13) and a third insulating layer (15), wherein the first insulating layer (11), the positive busbar (12), the second insulating layer (13), the negative busbar (14) and the third insulating layer (15) are stacked.

3. The laminated busbar suitable for adapting various power semiconductor packages according to claim 2, characterized in that, The connection terminal (2) includes a positive connection terminal (21) and a negative connection terminal (22). One end of the positive busbar (12) is connected to the negative power terminal (121), and the other end is connected to the positive connection terminal (21). One end of the negative busbar (14) is connected to the positive power terminal (142), and the other end is connected to the negative connection terminal (22). The negative power terminal (121) and the positive power terminal (142) are located on one side of the stacked busbar body (1), and the positive connection terminal (21) and the negative connection terminal (22) are located on the other side of the stacked busbar body (1).

4. The laminated busbar suitable for adapting various power semiconductor packages according to claim 3, characterized in that, The third insulating layer (15) is provided with an insulating hole (151). The negative terminal (32) of the capacitor (3) passes through the insulating hole (151) and is connected to the negative busbar (14). The clearance hole (141) is a through hole (1411) that passes through the second insulating layer (13), the negative busbar (14) and the third insulating layer (15) in sequence. The protrusion (4) is connected to the positive terminal (31) of the capacitor (3) through the through hole (1411).

5. The laminated busbar suitable for adapting various power semiconductor packages according to claim 1, wherein, The capacitor (3) is configured as a plurality of capacitors, and a mounting base (6) is installed at the end of the capacitor (3) away from the stacked busbar body (1).

6. The laminated busbar suitable for adapting various power semiconductor packages according to claim 4, wherein, The second insulating layer (13) is provided with a first positioning post (7) and a second positioning post (8) on both sides respectively. The first insulating layer (11) and the positive busbar (12) are provided with a first positioning groove (9) that is connected. The first positioning post (7) is inserted into the first positioning groove (9). The third insulating layer (15) and the negative busbar (14) are provided with a second positioning groove (91) that is connected. The second positioning post (8) is inserted into the second positioning groove (91).

7. The laminated busbar adapted to various power semiconductor packages according to claim 6, wherein, Both the first positioning post (7) and the second positioning post (8) are square structures, and both the first positioning groove (9) and the second positioning groove (91) are square grooves.

8. The laminated busbar suitable for adapting various power semiconductor packages according to claim 2, wherein, The first insulating layer (11), the positive busbar (12), the second insulating layer (13), the negative busbar (14) and the third insulating layer (15) are connected by heat-resistant insulating adhesive.

9. The laminated busbar suitable for adapting various power semiconductor packages according to claim 2, wherein, The second insulating layer (13) is an epoxy resin insulating layer.

10. The laminated busbar suitable for adapting various power semiconductor packages according to claim 2, wherein, The first insulating layer (11) and the third insulating layer (15) are PET insulating layers.

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