Semiconductor manufacturing equipment and ion source device with uniform and stable beam current

Abstract

The utility model relates to semiconductor manufacturing equipment and an ion source device with a uniform and stable beam. The device comprises a gas supply mechanism and an ion source generation mechanism, the gas supply mechanism is used for supplying uniformly distributed inert gas to the ion source generation mechanism, the gas supply mechanism comprises a plurality of pipelines which are connected in a penetrating manner, and the ion source generation mechanism comprises a neutralization metal piece and an electron generation assembly; the electron generation assembly comprises a positive electrode metal plate, a negative electrode metal plate and an electron activity cavity defined by the positive electrode metal plate and the negative electrode metal plate, each pipeline penetrates through the positive electrode metal plate to be exposed in the electron activity cavity, and a plurality of gaps are formed in the negative electrode metal plate. According to the device, inert gas which is uniformly distributed and provided by the gas supply mechanism collides with electrons generated by the electron generation assembly to generate inert gas positive ions with uniform beams, and the inert gas drives the inert gas positive ions with the uniform beams to move upwards and move to the position of a neutralization metal piece through a gap; and the ion source with uniform and stable beam current is obtained.

Description

Technical Field

[0001] This application relates to the field of ion source technology, and in particular to a semiconductor manufacturing equipment and an ion source device with uniform and stable beam current. Background Technology

[0002] Ion sources play a crucial role in physical vapor deposition (PVD). Existing ion sources suffer from frequent wire breakage during the generation of electrons to bombard inert gas molecules, necessitating frequent wire replacements. Sometimes, sudden wire breakage during operation disrupts the ion source's normal function, impacting production efficiency. Another issue is the uneven distribution of inert gas within the ion source cavity, leading to uneven ion distribution. Utility Model Content

[0003] This application provides a semiconductor manufacturing apparatus and an ion source device with uniform and stable beam, which solves the technical problem that the metal wire breaks during the process of generating electrons to collide with inert gas molecules in existing ion sources, resulting in uneven ion generation.

[0004] To achieve the above objectives, this application provides the following technical solution:

[0005] In a first aspect, an ion source device with uniform and stable beam is provided, comprising: a gas supply mechanism and an ion source generating mechanism connected to the gas supply mechanism;

[0006] The gas supply mechanism is used to supply uniformly distributed inert gas to the electron-active cavity of the ion source generating mechanism. The gas supply mechanism includes multiple through-connected pipes for supplying the inert gas.

[0007] The ion source generating mechanism includes a neutralizing metal component and an electron generating component located below the neutralizing metal component. The electron generating component includes a positive electrode metal plate, a negative electrode metal plate, and an electron active cavity formed by the positive electrode metal plate and the negative electrode metal plate. Each of the channels passes through the positive electrode metal plate and is exposed in the electron active cavity. Several gaps are formed on the negative electrode metal plate.

[0008] The electron generating component is used to generate electrons, and the ion source generating mechanism is used to generate uniformly distributed inert gas according to the gas supply mechanism. The inert gas collides with the electrons to generate uniformly distributed inert gas positive ions. The inert gas drives the uniformly distributed inert gas positive ions to move upward through the gap to the position of the neutralizing metal component, thereby obtaining a uniform and stable ion source.

[0009] Preferably, the electron generating component further includes a support, a metal element, and a light-supplying element. The support is mounted on the positive electrode metal plate inside the electron active cavity, the metal element is mounted on the support, and the light-supplying element is electrically connected to the metal element.

[0010] Preferably, the light-emitting element is also connected to a power source; when the power source supplies power to the light-emitting element, the light-emitting element emits a light source that illuminates the metal element, causing the metal element to release electrons.

[0011] Preferably, the metal element is a metal part made of a metal target.

[0012] Preferably, the light-providing element is a light source.

[0013] Preferably, the positive electrode metal plate has several through holes that are connected to each of the pipes, and each pipe passes through the through holes and is exposed in the electronic active cavity.

[0014] Preferably, several of the through holes are arranged in a circumferential matrix on the bottom surface of the positive electrode metal plate.

[0015] Preferably, the positive electrode metal plate is in the shape of a U-shaped cylinder with an inner cavity, and the negative electrode metal plate covers the positive electrode metal plate.

[0016] Preferably, the neutralizing metal component is a filament.

[0017] In a second aspect, a semiconductor manufacturing apparatus is provided, including the aforementioned ion source device with uniform and stable beam current.

[0018] The semiconductor manufacturing equipment and the ion source device with uniform and stable beam flow include a gas supply mechanism and an ion source generation mechanism connected to the gas supply mechanism. The gas supply mechanism is used to provide uniformly distributed inert gas to the electron active cavity of the ion source generation mechanism. The gas supply mechanism includes multiple through-connected pipes for providing inert gas. The ion source generation mechanism includes a neutralizing metal component and an electron generation component located below the neutralizing metal component. The electron generation component includes a positive electrode metal plate, a negative electrode metal plate, and an electron active cavity surrounded by the positive electrode metal plate and the negative electrode metal plate. Each pipe passes through the positive electrode metal plate and is exposed in the electron active cavity. Several gaps are opened on the negative electrode metal plate.

[0019] As can be seen from the above technical solutions, this application has the following advantages: The uniform and stable ion source device provides uniformly distributed inert gas through a gas supply mechanism, which collides with electrons generated by the electron generation component to generate uniformly distributed inert gas positive ions. The inert gas drives the uniformly distributed inert gas positive ions upward through the gap to the position of the neutralizing metal part, thus obtaining a uniform and stable ion source; it solves the technical problem that in the process of generating electrons to collide with inert gas molecules using metal wires in existing ion sources, the metal wires may break, resulting in uneven ion generation.

[0020] This semiconductor manufacturing equipment obtains a uniform and stable ion source through a beam-uniform and stable ion source device, thereby improving the performance of the semiconductor manufacturing equipment. Attached Figure Description

[0021] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0022] Figure 1 This is a schematic diagram of the structure of the ion source device with uniform and stable beam as described in the embodiments of this application;

[0023] Figure 2 This is a top view of another embodiment of the ion source device with uniform and stable beam flow described in this application. Detailed Implementation

[0024] To make the inventive objectives, features, and advantages of this application more apparent and understandable, the technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the embodiments described below are only some embodiments of this application, and not all embodiments. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0025] In the description of the embodiments of this application, it should be understood that the terms "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings. They are only for the convenience of describing the embodiments of this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0026] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the embodiments of this application, "multiple" means two or more, unless otherwise explicitly specified.

[0027] In the embodiments of this application, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. For those skilled in the art, the specific meaning of the above terms in the embodiments of this application can be understood according to the specific circumstances.

[0028] Patent terminology used in this application:

[0029] A light source is a physics term referring to an object that emits electromagnetic waves (including visible light as well as invisible light such as ultraviolet, infrared, and X-rays) within a certain wavelength range. Light sources typically refer to objects that emit visible light. Light sources can be divided into natural light sources and artificial light sources, such as the sun, a lit electric light bulb, and a burning candle.

[0030] This application provides a semiconductor manufacturing apparatus and an ion source device with uniform and stable beam current, which solves the technical problem of uneven ion generation caused by wire breakage during the process of generating electrons to collide with inert gas molecules in existing ion sources. The semiconductor manufacturing apparatus can be a coating equipment, cleaning equipment, or etching equipment, etc., and the ion source device with uniform and stable beam current can also be applied to mass spectrometry, ion implantation, surface treatment, and other fields.

[0031] Example 1:

[0032] Figure 1 This is a schematic diagram of the structure of the ion source device with uniform and stable beam as described in the embodiments of this application.

[0033] like Figure 1 As shown, this application provides an ion source device with uniform and stable beam, including a gas supply mechanism 10 and an ion source generation mechanism 20 connected to the gas supply mechanism 10.

[0034] like Figure 1As shown in the embodiment of this application, the gas supply mechanism 10 is used to provide uniformly distributed inert gas to the electronic active cavity 21 of the ion source generating mechanism 20. The gas supply mechanism 10 includes multiple through-connected pipes 11 for providing inert gas.

[0035] It should be noted that the gas supply mechanism 10 of the uniform and stable ion source device is provided with at least 4 pipes 11. The gas supply mechanism 10 provides uniformly distributed inert gas to the electron active cavity 21 through several pipes 11.

[0036] like Figure 1 As shown in this embodiment, the ion source generating mechanism 20 includes a neutralizing metal component 22 and an electron generating component located below the neutralizing metal component 22. The electron generating component includes a positive electrode metal plate 23, a negative electrode metal plate 24, and an electron active cavity 21 formed by the positive electrode metal plate 23 and the negative electrode metal plate 24. Each pipe 11 passes through the positive electrode metal plate 23 and is exposed in the electron active cavity 21. Several gaps 241 are provided on the negative electrode metal plate 24. The electron generating component is used to generate electrons, and the ion source generating mechanism 20 is used to generate a beam of uniform inert gas positive ions by colliding with the electrons provided by the gas supply mechanism 10. The inert gas drives the beam of uniform inert gas positive ions to move upward through the gaps 241 to the position of the neutralizing metal component 22, thereby obtaining a beam of uniform and stable ion source.

[0037] It should be noted that gap 241 provides space for gas flow. The electron generating component produces electrons, which, guided by the positive electrode metal plate 23, move horizontally and downwards under gravity. Inert gas emerges from several pipes 11 and collides with the electrons, generating uniform inert gas positive ions. Under the electric field between the positive voltage provided by the positive electrode metal plate 23 and the negative voltage provided by the negative electrode metal plate 24, the inert gas positive ions overcome their own gravity and accelerate upwards in the electron movement cavity 21. In this embodiment, the inert gas provided by the multiple pipes 11 collides with electrons in the electron movement cavity 21, forming several uniform inert gas positive ion clusters. These clusters are propelled upwards by the inert gas. The neutralizing metal component 22 can be selected as a filament.

[0038] This application provides an ion source device with uniform and stable beam flow, comprising a gas supply mechanism and an ion source generating mechanism connected to the gas supply mechanism. The gas supply mechanism is used to supply uniformly distributed inert gas to the electron active cavity of the ion source generating mechanism. The gas supply mechanism includes multiple through-connected pipes for supplying inert gas. The ion source generating mechanism includes a neutralizing metal component and an electron generating component located below the neutralizing metal component. The electron generating component includes a positive electrode metal plate, a negative electrode metal plate, and an electron active cavity formed by the positive electrode metal plate and the negative electrode metal plate. Each pipe passes through the positive electrode metal plate and is exposed in the electron active cavity. Several gaps are formed on the negative electrode metal plate. The electron generating component is used to generate electrons. The ion source generating mechanism is used to generate uniformly distributed inert gas positive ions by colliding with the electrons according to the uniformly distributed inert gas supplied by the gas supply mechanism. The inert gas drives the uniformly distributed inert gas positive ions to move upward through the gaps to the position of the neutralizing metal component, thereby obtaining a uniformly and stable ion source flow. This uniform and stable ion source device provides a uniformly distributed inert gas through a gas supply mechanism. The inert gas collides with electrons generated by the electron generation component to produce a uniform beam of inert gas positive ions. The inert gas carries the uniform beam of inert gas positive ions upward through the gap to the position of the neutralizing metal component, thus obtaining a uniform and stable ion source. This solves the technical problem of non-uniform ion generation caused by the breakage of metal wires in existing ion sources that use metal wires to generate electrons to collide with inert gas molecules.

[0039] like Figure 1 As shown, in one embodiment of this application, the electron generating component further includes a bracket 25, a metal element 26, and a light-generating element 27. The bracket 25 is mounted on the positive electrode metal plate 23 inside the electron active cavity 21, the metal element 26 is mounted on the bracket 25, and the light-generating element 27 is electrically connected to the metal element 26.

[0040] It should be noted that the light-giving element 27 is mounted on the metal element 26 via a support member, and the light-giving element 27 is also connected to a power source. When the power source supplies power to the light-giving element 27, the light-giving element 27 emits a light source that illuminates the metal element 26, causing the metal element 26 to release electrons. In this embodiment, the metal element 26 can be selected as a metal part made of a metal target. The light-giving element 27 can be selected as a light source.

[0041] In this embodiment, since the photon energy E=hu (u is the frequency), when hu≥W0, the electrons of the metal element 26 overcome the binding force and escape, and the remaining energy is converted into kinetic energy. W0 is the work function of the metal element, and h is a constant coefficient. Therefore, after the light-supplying element 27 is energized, the initial kinetic energy of the electrons overflowing from the surface of the metal element 26 can be controlled by adjusting the frequency of the light-supplying element 27 in this uniform and stable ion source device.

[0042] It should be noted that, because high-energy electrons collide with inert gas molecules, they are more likely to generate inert gas ions. This uniform and stable ion source device can control the metal element 26 to output high kinetic energy.

[0043] In this embodiment, when the frequency of the incident light remains constant, the photocurrent is directly proportional to the intensity of the incident light. Therefore, the ion source device with uniform and stable beam can control the magnitude of the current of electrons overflowing from the surface of the metal element 26 by adjusting the intensity of the light from the light-supplying element 27.

[0044] In this embodiment of the application, since traditional ion sources rely on energizing metal wires to generate electrons, the drawback is that the filament life is short and the metal wires need to be replaced frequently. However, this ion source device with uniform and stable beam uses photoelectric generation to generate electrons, which extends the service life of the ion source.

[0045] Figure 2 This is a top view of another embodiment of the ion source device with uniform and stable beam flow described in this application.

[0046] like Figure 1 and Figure 2 As shown, in one embodiment of this application, the positive electrode metal plate 23 has several through holes that are connected to each pipe 11, and each pipe 11 is exposed in the electronic active cavity 21 through the through holes. The several through holes are arranged in a circumferential matrix on the bottom surface of the positive electrode metal plate 23.

[0047] It should be noted that the positive electrode metal plate 23 is a U-shaped cylinder with an inner cavity, and the negative electrode metal plate 24 covers the positive electrode metal plate 23. In this embodiment, with the uniform distribution of several channels 11, the electron active cavity 21 contains several ion clusters, and the ion clusters are uniformly distributed in the electron active cavity 21. The positive ion clusters reach the neutralizing metal component 22 through the gap 241 of the negative electrode metal plate 24, thereby forming a uniform and stable ion source that moves upward.

[0048] In the embodiments of this application, the working principle of the uniform and stable ion source device is as follows: when the light supply element 27 is energized, the metal element 26 is controlled to release electrons. Under the guidance of the positive electrode metal plate 23, the electrons move horizontally and will move downward under the action of gravity. In the electron activity cavity 21, inert gas emerges from several pipes 11 and collides with the electrons to generate inert gas positive ions. Under the action of the electric field between the positive voltage of the positive electrode metal plate 23 and the negative voltage of the negative electrode metal plate 24, the inert gas positive ions will overcome their own gravity and accelerate upward. The upward-moving inert gas positive ions reach the neutralizing metal part 22 through the gap 241 of the negative electrode metal plate 24 to obtain plasma, and form an ion source in the form of plasma that moves upward.

[0049] Example 2:

[0050] This application provides a semiconductor manufacturing apparatus, including the aforementioned ion source device with uniform and stable beam.

[0051] It should be noted that the details of the beam-uniform and stable ion source device have already been described in Embodiment 1, and will not be repeated in this embodiment. In this embodiment, the semiconductor manufacturing equipment obtains a beam-uniform and stable ion source through the beam-uniform and stable ion source device, thereby improving the performance of the semiconductor manufacturing equipment.

[0052] The above-described embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application.

Claims

1. An ion source device for stabilizing a beam current uniformity, characterized by, It includes a gas supply mechanism and an ion source generation mechanism connected to the gas supply mechanism; The gas supply mechanism is used to supply uniformly distributed inert gas to the electron-active cavity of the ion source generating mechanism. The gas supply mechanism includes multiple through-connected pipes for supplying the inert gas. The ion source generating mechanism includes a neutralizing metal component and an electron generating component located below the neutralizing metal component. The electron generating component includes a positive electrode metal plate, a negative electrode metal plate, and an electron active cavity formed by the positive electrode metal plate and the negative electrode metal plate. Each of the channels passes through the positive electrode metal plate and is exposed in the electron active cavity. Several gaps are formed on the negative electrode metal plate.

2. The ion source device with uniform and stable beam according to claim 1, characterized in that, The electron generation assembly further includes a support, a metal element, and a light-supplying element. The support is mounted on the positive electrode metal plate inside the electron active cavity, the metal element is mounted on the support, and the light-supplying element is electrically connected to the metal element.

3. The ion source device with uniform and stable beam according to claim 2, characterized in that, The light-emitting element is also connected to a power source; when the power source supplies power to the light-emitting element, the light-emitting element emits a light source that illuminates the metal element, causing the metal element to release electrons.

4. The ion source device with uniform and stable beam according to claim 2, characterized in that, The metal element is a metal part made of metal target material.

5. The ion source device with uniform and stable beam according to claim 2, characterized in that, The light-supplying element is a light source.

6. The ion source device with uniform and stable beam according to any one of claims 1-5, characterized in that, The positive electrode metal plate has several through holes that are connected to each of the pipes, and each pipe passes through the through holes and is exposed in the electronic active cavity.

7. The ion source device with uniform and stable beam according to claim 6, characterized in that, Several through holes are arranged in a circumferential matrix on the bottom surface of the positive electrode metal plate.

8. The ion source device with uniform and stable beam according to any one of claims 1-5, characterized in that, The positive electrode metal plate is in the shape of a U-shaped cylinder with an inner cavity, and the negative electrode metal plate covers the positive electrode metal plate.

9. The ion source device with uniform and stable beam according to any one of claims 1-5, characterized in that, The neutralizing metal component is a filament.

10. A semiconductor manufacturing apparatus, characterized in that, Includes the ion source device with uniform and stable beam as described in any one of claims 1-9.

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