Power device with integrated capacitor and electrical system
By integrating capacitors into power devices, the problem of limited integration caused by the reliance on discrete components in peripheral circuits is solved, thus simplifying the electrical system and improving its integration.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- JIANGSU SOLID POWER SEMICON CO LTD
- Filing Date
- 2025-05-27
- Publication Date
- 2026-05-08
AI Technical Summary
In existing technologies, the peripheral circuits of power devices rely on discrete components, which limits the improvement of system integration. How can we provide power devices and electrical systems with integrated capacitors to improve integration?
Integrating capacitor elements inside power devices, by setting a conductive layer between the device layer and the capacitor dielectric layer, forms an integrated capacitor, which simplifies the electrical system structure and is compatible with conventional process flows.
It saves space for additional capacitors in the system circuit, simplifies the electrical system structure, improves the integration of power devices and electrical systems, and is suitable for mass production.
Smart Images
Figure CN224218743U_ABST
Abstract
Description
Technical Field
[0001] This application belongs to the field of power device technology and relates to a power device and electrical system with integrated capacitor. Background Technology
[0002] In recent years, in order to achieve the goal of high power density, power discrete semiconductor devices have continued to evolve towards miniaturization of chip area, enhancement of current carrying capacity and efficiency improvement. The chip packaging structure and application system are also gradually pursuing higher integration. For example, by reducing the size of power devices, the overall size of the system can be reduced, thereby increasing power density.
[0003] With the gradual optimization of chip design and process technology, the chip area of power devices with the same current rating is gradually shrinking. This not only helps reduce the cost per chip but also improves operating efficiency (e.g., reducing on-resistance and switching losses). However, breakthroughs in system-level power density depend not only on the optimization of the power devices themselves but also on the simultaneous reduction in the size of peripheral circuit components (such as capacitors and inductors). Currently, the peripheral circuits of power devices typically rely on discrete components (e.g., placing independently packaged discrete capacitors on the circuit board, occupying additional space), which limits the improvement of overall system integration.
[0004] Therefore, how to provide a power device and electrical system with integrated capacitors to improve the integration of power devices and electrical systems has become an important technical problem that needs to be solved by those skilled in the art.
[0005] It should be noted that the above introduction to the technical background is only for the purpose of providing a clear and complete explanation of the technical solutions of this application and facilitating understanding by those skilled in the art. It should not be assumed that these technical solutions are known to those skilled in the art simply because they have been described in the background section of this application. Utility Model Content
[0006] In view of the shortcomings of the prior art described above, the purpose of this application is to provide a power device and electrical system with integrated capacitors to solve the problem of limited integration of electrical systems in the prior art.
[0007] To achieve the above and other related objectives, in a first aspect, this application provides a power device with an integrated capacitor, comprising a device layer, a capacitor dielectric layer and a conductive layer, wherein the capacitor dielectric layer and the conductive layer are located on one side of the device layer;
[0008] The capacitor dielectric layer includes a capacitor dielectric portion;
[0009] The conductive layer is connected to the capacitor dielectric layer. The conductive layer includes a first conductive portion and a second conductive portion, and in the direction perpendicular to the device layer to the capacitor dielectric layer, the first conductive portion and the second conductive portion are arranged on opposite sides of the capacitor dielectric portion.
[0010] An integrated capacitor is constructed based on the first conductive part, the capacitor dielectric part, and the second conductive part.
[0011] In an optional embodiment, in the direction from the device layer to the capacitor dielectric layer, the first conductive portion penetrates at least a portion of the capacitor dielectric layer; and / or, the second conductive portion penetrates at least a portion of the capacitor dielectric layer; wherein, the portion of the capacitor dielectric layer located between the first conductive portion and the second conductive portion constitutes the capacitor dielectric portion.
[0012] In an optional embodiment, the power device includes a cell region and a terminal region, the terminal region being adjacent to the periphery of the cell region, and the integrated capacitor being located in the terminal region;
[0013] The power device further includes a lead-out layer, which includes a first lead-out metal and a second lead-out metal. The first lead-out metal is electrically connected to the first conductive portion, and the second lead-out metal is electrically connected to the second conductive portion.
[0014] In an optional embodiment, the power device further includes a termination cutoff ring located in the termination region and electrically connected to the second lead-out metal.
[0015] In an optional embodiment, the power device further includes a passivation layer located between the device layer and the capacitor dielectric layer, and a field plate layer is formed in the passivation layer, the field plate layer being electrically connected to the second lead metal.
[0016] In an optional embodiment, the power device includes a MOSFET or an IGBT, and the power device includes a first functional electrode and a second functional electrode with different access potentials; wherein,
[0017] The connection potential of the second lead-out metal is the same as the connection potential of the first functional electrode; or,
[0018] The access potential of the second lead-out metal is the same as the access potential of the second functional electrode.
[0019] In an optional embodiment, the capacitor dielectric layer is located on one side of the cell region, or the capacitor dielectric layer surrounds the cell region.
[0020] In an optional embodiment, in the direction perpendicular to the device layer to the capacitor dielectric layer, the capacitor dielectric layer is at least one of a strip shape, a zigzag shape, a wavy shape, a serpentine shape, and a spiral shape; and / or, the first conductive portion is at least one of a strip shape, a zigzag shape, a wavy shape, a serpentine shape, and a spiral shape; and / or, the second conductive portion is at least one of a strip shape, a zigzag shape, a wavy shape, a serpentine shape, and a spiral shape.
[0021] In optional embodiments, the material of the conductive layer includes at least one of silicon, metal, and conductive metal compound; and / or, the material of the capacitor dielectric layer includes at least one of silicon oxide, silicon oxynitride, hafnium oxide, zirconium oxide, aluminum oxide, lanthanum oxide, tantalum oxide, titanium oxide, polypropylene, and polyphenylene sulfide.
[0022] Secondly, this application provides an electrical system including the power device and peripheral circuits as described above, wherein the peripheral circuits are electrically connected to the integrated capacitor.
[0023] As described above, the power device with integrated capacitor of this application saves space occupied by additional capacitors in the system circuit by integrating the capacitor element (i.e., the integrated capacitor C) inside the power device, simplifies the structure of the electrical system, and improves the integration of the power device and the electrical system. Furthermore, the placement of this integrated capacitor is compatible with the conventional process flow of power devices, without increasing process cost or difficulty, and its simple structure makes it suitable for mass production. The electrical system of this application includes a power device with an integrated capacitor, which simplifies the overall circuit structure of the electrical system and improves the integration, making it suitable for applications with high integration requirements. Attached Figure Description
[0024] Figure 1 This is a top view of a power device with an integrated capacitor provided in an embodiment of this application.
[0025] Figure 2 for Figure 1 A cross-sectional view of point A within the dashed box.
[0026] Figure 3 This is a top view schematic diagram of the first type of integrated capacitor structure in a power device with integrated capacitor provided in an embodiment of this application.
[0027] Figure 4 This is a second top view schematic diagram of the integrated capacitor in a power device with an integrated capacitor provided in an embodiment of this application.
[0028] Figure 5 This is a schematic diagram of the equivalent circuit when the integrated capacitor and the collector are connected in a power device with an integrated capacitor, as provided in an embodiment of this application.
[0029] Explanation of reference numerals in the attached figures:
[0030] 10-Device layer, 11-Termination cutoff ring, 12-Collector, 13-Buffer layer, 14-Drift layer;
[0031] 20 - Capacitor dielectric layer; 21 - Capacitor dielectric section; 31 - First conductive section; 32 - Second conductive section; C - Integrated capacitor;
[0032] 41-First lead metal of capacitor, 42-Second lead metal of capacitor, 43-Emitter metal, 44-Collector metal, 45-Gate metal;
[0033] 50 - Passivation layer; 60 - Field plate layer; 71 - First contact hole; 72 - Second contact hole. Detailed Implementation
[0034] The following specific examples illustrate the implementation of this application. Those skilled in the art can easily understand other advantages and effects of this application from the content disclosed in this specification. This application can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of this application.
[0035] Please see Figures 1 to 5 It should be noted that the illustrations provided in this embodiment are only schematic representations of the basic concept of this application. Therefore, the drawings only show the components related to this application and are not drawn according to the actual number, shape and size of the components in the actual implementation. In the actual implementation, the form, quantity and proportion of each component can be arbitrarily changed, and the layout of the components may also be more complex.
[0036] This application provides a power device (hereinafter referred to as "power device") with an integrated capacitor. Please refer to... Figure 1 and Figure 2 ,in, Figure 1 A top view of the power device is shown. Figure 2 It shows Figure 1 A cross-sectional view at point A within the dashed box. The power device includes a device layer 10, a capacitor dielectric layer 20, and a conductive layer (not labeled).
[0037] Specifically, the capacitor dielectric layer 20 and the conductive layer are located on one side of the device layer 10. The capacitor dielectric layer 20 includes a capacitor dielectric portion 21. The conductive layer is connected to the capacitor dielectric layer 20 and includes a first conductive portion 31 and a second conductive portion 32 (the first conductive portion 31 and the second conductive portion 32 are electrically isolated). In a direction perpendicular to the device layer 10 to the capacitor dielectric layer 20 (e.g., a horizontal direction), the first conductive portion 31 and the second conductive portion 32 are arranged on opposite sides of the capacitor dielectric portion 21, separated by the capacitor dielectric portion 21. An integrated capacitor C is formed based on the first conductive portion 31, the capacitor dielectric portion 21, and the second conductive portion 32, with the first conductive portion 31 and the second conductive portion 32 serving as the two plates of the integrated capacitor C.
[0038] In some embodiments, such as Figure 2 As shown, in the direction from the device layer 10 to the capacitor dielectric layer 20 (e.g., the vertical direction), the first conductive portion 31 penetrates at least a portion of the capacitor dielectric layer 20, and / or the second conductive portion 32 penetrates at least a portion of the capacitor dielectric layer 20. The portion of the capacitor dielectric layer 20 located between the first conductive portion 31 and the second conductive portion 32 constitutes the capacitor dielectric portion 21. In this case, the capacitor dielectric layer 20 also includes portions other than the capacitor dielectric portion 21 to partially cover the first conductive portion 31 and / or the second conductive portion 32, and to support the integrated capacitor C.
[0039] It should be noted that, Figure 2 The example illustrates that both the first conductive portion 31 and the second conductive portion 32 penetrate only a portion of the capacitor dielectric layer 20. In practical applications, the first conductive portion 31 and the second conductive portion 32 can completely penetrate the capacitor dielectric layer 20. Furthermore, if the capacitor dielectric layer 20 is made of the same material as the underlying structural layer (e.g., passivation layer 50) and the structural layer has a certain thickness, they can extend further into that structural layer. Besides the specific structure where both the first conductive portion 31 and the second conductive portion 32 penetrate the capacitor dielectric layer 20, the first conductive portion 31 and the second conductive portion 32 can also be connected to opposite sides of the capacitor dielectric layer 20 (e.g., the entire capacitor dielectric layer 20 can be used as the capacitor dielectric portion 21). Alternatively, one of the first conductive portion 31 and the second conductive portion 32 can be embedded within the capacitor dielectric layer 20, while the other is connected to the outside of the capacitor dielectric layer 20. These two structures need to be constructed under the premise that good contact can be formed between the first conductive part 31 (second conductive part 32) and the capacitor dielectric layer 20; otherwise, the electrical performance of the integrated capacitor C may be affected.
[0040] In some embodiments, the power device includes a cell region (not shown) and a terminal region (not shown), the terminal region being adjacent to the periphery of the cell region. The power device includes multiple cell structures formed in the cell region, and the integrated capacitor C is located in the terminal region. Further, the power device also includes a lead-out layer, the lead-out layer including a first capacitor lead-out metal 41 and a second capacitor lead-out metal 42, the first capacitor lead-out metal 41 being electrically connected to the first conductive portion 31, and the second capacitor lead-out metal 42 being electrically connected to the second conductive portion 32. That is, the integrated capacitor C is disposed in the terminal region, and the lead-out layer may be disposed at a corner of the terminal region (e.g.,...). Figure 1 As shown, the blank area of the terminal region of the power device can be used without affecting the original structural layout of the power device, and without expanding the additional area, which may affect the overall integration of the power device.
[0041] In some embodiments, the power device includes a MOSFET or an IGBT. Further, the power device includes a first functional electrode and a second functional electrode with different access potentials. The access potential of the second lead-out metal 42 of the capacitor is the same as the access potential of the first functional electrode. Alternatively, the access potential of the second lead-out metal 42 of the capacitor is the same as the access potential of the second functional electrode. For example, the power device is a MOSFET, and the first functional electrode and the second functional electrode are the source and drain, respectively. Alternatively, the power device is an IGBT, and the first functional electrode and the second functional electrode are the emitter and collector, respectively. That is, in the power device, the integrated capacitor C is electrically connected to the source (or the emitter) and the drain (or the collector). Correspondingly, as... Figure 1 and Figure 2 As shown, the power device further includes a first functional electrode metal 43 electrically connected to a first functional electrode, a second functional electrode metal 44 electrically connected to a second functional electrode, and a gate metal 45 electrically connected to a gate. The gate metal 45 and the first functional electrode metal 43 are located on the front side of the power device, and the second functional electrode metal 44 is located on the back side of the power device.
[0042] like Figure 2 As shown, Figure 2 The power device described herein is illustrated using an IGBT as an example, and Figure 2 The second lead metal 42 of the capacitor is connected to the same potential as the collector 12 of the IGBT, so as to connect the integrated capacitor C to the collector 12 of the IGBT (further connected in series between the collector 12 and the external circuit). Please refer to [link to relevant documentation]. Figure 5The diagram shows the equivalent circuit when the integrated capacitor is connected to the collector. In this case, the integrated capacitor C can absorb energy to suppress voltage spikes, thereby improving the reliability of the IGBT.
[0043] In some embodiments, the power device further includes a termination cutoff ring 11 located in the termination region and electrically connected to the second lead metal 42 of the capacitor, for example, as... Figure 2 As shown, the terminal cut-off ring 11 is electrically connected to the second lead metal 42 of the capacitor via the first contact hole 71.
[0044] In some embodiments, the power device is an IGBT, comprising a collector 12, a buffer layer 13, and a drift layer 14 stacked from bottom to top. A doped region (not shown) and a termination stop ring 11 are formed in the drift layer 14, with the termination stop ring 11 located within the doped region. The collector 12, the buffer layer 13, and the doped region are all of a first conductivity type, while the drift layer 14 and the termination stop ring 11 are of a second conductivity type. The doping concentration of the termination stop ring 11 is greater than the doping concentration of the second conductivity type drift layer 14. For example, if the first conductivity type is P-type, then the second conductivity type is N-type, and in this case, the termination stop ring 11 is N-type.
[0045] In some embodiments, the power device further includes a passivation layer 50 located between the device layer 10 and the capacitor dielectric layer 20. A field plate layer 60 is also formed in the passivation layer 50, and the field plate layer 60 is electrically connected to the second lead metal 42 of the capacitor. For example, the field plate layer 60 is electrically connected to the second lead metal 42 of the capacitor via a second contact hole 72. When the power device includes both the termination stop ring 11 and the field plate layer 60, the field plate layer 60 extends from above the termination stop ring 11 to above the first conductivity type doped region. The field plate layer 60 helps to adjust the electric field distribution and reduce the electric field strength in the termination region to improve the voltage withstand performance of the device. That is, in this embodiment, the second lead metal 42 of the capacitor, in addition to being used to electrically lead out one of the plates of the integrated capacitor C (e.g., the second conductive portion 32), is also used to electrically lead out the termination structure (the termination stop ring 11 / the field plate layer 60) of the power device.
[0046] Furthermore, the material of the field plate layer 60 includes at least one selected from polycrystalline silicon, metal, metal nitride, and metal silicide, for example, Figure 2 The image shows a polycrystalline silicon field plate.
[0047] It should be noted that, since the setting of the collector integrated capacitor requires comprehensive consideration of the compatibility issues between the integrated capacitor and the terminal structure, the embodiments of this application use... Figure 2 The example uses an IGBT as the power device, with the integrated capacitor C connected to the collector 12 of the IGBT. In practical applications, the integrated capacitor C can also be connected to the emitter of the IGBT, or it can be integrated into a power device such as a MOSFET. For specific structures, please refer to [reference needed]. Figure 2 The structure of the integrated capacitor C shown is adaptively adjusted.
[0048] In this embodiment, by integrating the integrated capacitor C inside the power device, when a capacitor needs to be connected during the application of the power device, the integrated capacitor C can be directly used. On the one hand, this shortens the current path between the capacitor and the power device, reduces the influence of parasitic parameters, and ensures the operating performance and efficiency of the power device. On the other hand, it effectively saves the space occupied by additional capacitors arranged in the system circuit (e.g., the independent package structure of external capacitors, the space occupied on the circuit board), simplifies the structure of the electrical system using the power device, improves the integration of the power device and the electrical system, conforms to the development trend of power integration, and improves more efficient power applications.
[0049] In some embodiments, the capacitor dielectric layer 20 is located on one side of the cell region, or the capacitor dielectric layer 20 surrounds the cell region.
[0050] In this embodiment, by placing the capacitor dielectric layer 20 in the terminal region and adjusting its structure (e.g., morphology, horizontal cross-sectional morphology), dimensions (e.g., length, width, or thickness), and material based on theoretical calculations during the design phase, a structure for an integrated capacitor C with a more accurate capacitance value and meeting practical application requirements is obtained. For example, the capacitor dielectric layer 20 can be placed only on one side of the cell region or at the corner of the terminal region to obtain a relatively small capacitance value. Alternatively, if a larger capacitance value cannot be obtained in the aforementioned cases, the capacitor dielectric layer 20 can be further arranged to surround the cell region, which can effectively expand the area of the first conductive part 31 and the second conductive part 32 relative to each other, thereby increasing the capacitance value of the integrated capacitor C.
[0051] In some embodiments, in a direction perpendicular to the device layer 10 to the capacitor dielectric layer 20 (e.g., a horizontal direction), the capacitor dielectric layer 20 is at least one of a stripe shape, a zigzag shape, a wavy shape, a serpentine shape, and a spiral shape. And / or, the first conductive portion 31 is at least one of a stripe shape, a zigzag shape, a wavy shape, a serpentine shape, and a spiral shape. And / or, the second conductive portion 32 is at least one of a stripe shape, a zigzag shape, a wavy shape, a serpentine shape, and a spiral shape. For example, see [reference needed]. Figure 3 and Figure 4 ,in, Figure 3 A first top view of the integrated capacitor C is shown, in which the integrated capacitor C has a rectangular shape, wherein the capacitor dielectric layer 20, the first conductive portion 31, and the second conductive portion 32 are all strip-shaped. For example, Figure 4 A second top view of the integrated capacitor C is shown, in which the integrated capacitor C is serpentine, wherein the capacitor dielectric layer 20, the first conductive portion 31, and the second conductive portion 32 are all serpentine. Compared to a strip shape, the serpentine shape increases the relative area between the first conductive portion 31 and the second conductive portion 32, which helps to increase the equivalent capacitance value.
[0052] It should be noted that, Figure 3 and Figure 4 The example is illustrated by showing that the capacitor dielectric layer 20, the first conductive part 31 and the second conductive part 32 have the same morphology. In actual application, the morphology of the above three structures can be adjusted while meeting the capacitance value of the integrated capacitor C, and they do not need to be strictly consistent.
[0053] In some embodiments, the conductive layer is made of at least one of silicon, a metal, and a conductive metal compound, wherein the metal includes Al, Cu, W, etc. The capacitor dielectric layer 20 is made of at least one of silicon oxide, silicon nitride, silicon oxynitride, hafnium oxide, zirconium oxide, aluminum oxide, lanthanum oxide, tantalum oxide, titanium oxide, and polypropylene.
[0054] Furthermore, the material of the conductive layer may be the same as or different from the material of the lead-out layer. When the first conductive portion 31 and the second conductive portion 32 penetrate at least a portion of the capacitor dielectric layer 20, before forming the first conductive portion 31 and the second conductive portion 32, the capacitor dielectric layer 20 needs to be etched to form a groove (or hole) for accommodating the first conductive portion 31 and the second conductive portion 32. When the size of the groove is small (e.g., width) (e.g., ...), Figure 4As shown), directly forming a metal layer to fill the groove, simultaneously forming the conductive layer and the lead-out layer, may result in poor contact between the metal material filled into the groove and the sidewall of the groove, thus affecting the performance of the subsequent integrated capacitor C. In this case, it is necessary to first form a metal material with excellent filling performance as the conductive layer (for example, the conductive layer can be formed in the same steps as the first contact hole 71 and the second contact hole 72), and then form the lead-out layer (i.e., the conductive layer and the lead-out layer are formed in different steps, and the materials may also be different). However, when the size of the groove is large (e.g., as shown), Figure 3 As shown, the conductive layer and the lead-out layer can be formed in the same step, and the materials of the two are consistent. The conductive layer, the lead-out layer, the first contact hole, the second contact hole, and even the emitter metal and gate metal located on the same side of the power device as the lead-out layer can be easily formed in the same step.
[0055] The power device with integrated capacitor in this application embodiment saves space occupied by additional capacitors in the system circuit by integrating the capacitor element (i.e., the integrated capacitor C) inside the power device, simplifies the structure of the electrical system, and improves the integration of the power device and the electrical system. Furthermore, the integrated capacitor is compatible with the conventional process flow of power devices, does not increase process cost or difficulty, has a simple structure, and is suitable for mass production.
[0056] This application embodiment also provides an electrical system, including the power device and peripheral circuit as described above, wherein the peripheral circuit is electrically connected to the integrated capacitor C.
[0057] In some embodiments, when the power device includes a lead-out layer and the access potential of the second lead-out metal 42 of the capacitor is the same as the access potential of the first functional electrode or the second functional electrode, the peripheral circuit is electrically connected to the first lead-out metal 41 of the capacitor to connect the integrated capacitor C between the peripheral circuit and the corresponding functional electrode of the power device, for example, as... Figure 5 As shown.
[0058] The electrical system in this application includes a power device with an integrated capacitor, which simplifies the overall circuit structure of the electrical system and improves the integration level, making it suitable for applications with high integration requirements.
[0059] The above embodiments are merely illustrative of the principles and effects of this application and are not intended to limit this application. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of this application. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in this application should still be covered by the claims of this application.
Claims
1. A power device with an integrated capacitor, characterized in that, It includes a device layer, a capacitor dielectric layer and a conductive layer, wherein the capacitor dielectric layer and the conductive layer are located on one side of the device layer; The capacitor dielectric layer includes a capacitor dielectric portion; The conductive layer is connected to the capacitor dielectric layer. The conductive layer includes a first conductive portion and a second conductive portion, and in the direction perpendicular to the device layer to the capacitor dielectric layer, the first conductive portion and the second conductive portion are arranged on opposite sides of the capacitor dielectric portion. An integrated capacitor is constructed based on the first conductive part, the capacitor dielectric part, and the second conductive part.
2. The power device with integrated capacitor according to claim 1, characterized in that: In the direction from the device layer to the capacitor dielectric layer, the first conductive portion penetrates at least a portion of the capacitor dielectric layer; and / or, the second conductive portion penetrates at least a portion of the capacitor dielectric layer; wherein, the portion of the capacitor dielectric layer located between the first conductive portion and the second conductive portion constitutes the capacitor dielectric portion.
3. The power device with integrated capacitor according to claim 1, characterized in that: The power device includes a cell region and a terminal region, the terminal region being adjacent to the periphery of the cell region, and the integrated capacitor being located in the terminal region; The power device further includes a lead-out layer, which includes a first lead-out metal and a second lead-out metal. The first lead-out metal is electrically connected to the first conductive portion, and the second lead-out metal is electrically connected to the second conductive portion.
4. The power device with integrated capacitor according to claim 3, characterized in that: The power device further includes a termination cutoff ring located in the termination region and electrically connected to the second lead-out metal.
5. The power device with integrated capacitor according to claim 3, characterized in that: The power device further includes a passivation layer located between the device layer and the capacitor dielectric layer. A field plate layer is also formed in the passivation layer, and the field plate layer is electrically connected to the second lead metal.
6. The power device with an integrated capacitor according to claim 4 or 5, characterized in that: The power device includes a MOSFET or an IGBT, and the power device includes a first functional electrode and a second functional electrode with different access potentials; wherein... The connection potential of the second lead-out metal is the same as the connection potential of the first functional electrode; or, The access potential of the second lead-out metal is the same as the access potential of the second functional electrode.
7. The power device with integrated capacitor according to claim 3, characterized in that: The capacitor dielectric layer is located on one side of the cell region, or the capacitor dielectric layer surrounds the cell region.
8. The power device with integrated capacitor according to claim 1, characterized in that: In the direction perpendicular to the device layer to the capacitor dielectric layer, the capacitor dielectric layer is at least one of strip shape, zigzag shape, wavy shape, serpentine shape and spiral shape; and / or, the first conductive portion is at least one of strip shape, zigzag shape, wavy shape, serpentine shape and spiral shape; and / or, the second conductive portion is at least one of strip shape, zigzag shape, wavy shape, serpentine shape and spiral shape.
9. The power device with integrated capacitor according to claim 1, characterized in that: The conductive layer is made of at least one of silicon, metal, and conductive metal compounds; and / or the capacitor dielectric layer is made of at least one of silicon oxide, silicon oxynitride, hafnium oxide, zirconium oxide, aluminum oxide, lanthanum oxide, tantalum oxide, titanium oxide, polypropylene, and polyphenylene sulfide.
10. An electrical system, characterized in that: It includes the power device and peripheral circuitry as described in any one of claims 1-9, wherein the peripheral circuitry is electrically connected to the integrated capacitor.