Grinding pad and grinding system
By setting an infrared sensor on the upper surface of the grinding pad, the problem of incomplete cleaning of grinding slurry residue was solved, thereby improving the grinding effect and process stability.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- ZHEJIANG ICSPROUT SEMICONDUCTOR CO LTD
- Filing Date
- 2025-06-10
- Publication Date
- 2026-05-12
AI Technical Summary
After chemical mechanical grinding, the residual grinding slurry in the existing grinding pads is not completely rinsed off, which affects the grinding effect and the quality of subsequent process steps.
Multiple grinding grooves are set on the upper surface of the grinding pad, and infrared sensors with alternating infrared emitting and receiving units are embedded in them. The grinding fluid residue is judged by detecting the infrared reflection characteristics, and the cleaning operation is triggered in real time.
It enables real-time monitoring of the grinding pad, preventing residual grinding fluid from affecting the grinding effect and improving grinding quality and stability.
Smart Images
Figure CN224223577U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of semiconductor technology, specifically to a polishing pad and polishing system. Background Technology
[0002] With the continuous development of industry, planarization processes are becoming increasingly common in the production of various components. Chemical mechanical polishing (CMP) is frequently used in planarization processes. The specific operation of CMP is as follows: a polishing pad is first attached to a polishing platform. A polishing slurry containing chemicals is supplied to the polishing pad. Pressure is applied to the workpiece (such as a semiconductor wafer), causing it to adhere tightly to the polishing pad, and driving relative movement between the workpiece and the polishing pad. Under the combined influence of mechanical friction caused by relative movement and the chemical action of the polishing slurry, part of the surface material of the workpiece is removed, making its surface flatter, thus achieving the purpose of planarization.
[0003] However, the grinding effect of the current grinding pads needs to be improved. Utility Model Content
[0004] In view of this, embodiments of this application provide an abrasive pad and an abrasive system to improve the abrasive effect of the abrasive pad.
[0005] To achieve the above objectives, the embodiments of this application provide the following technical solutions.
[0006] In a first aspect, embodiments of this application provide an abrasive pad, comprising:
[0007] The upper and lower surfaces are opposite to each other. The upper surface is used to grind the device to be ground, and the lower surface is used to fix the grinding pad to a preset position. The upper surface is provided with a plurality of grinding grooves.
[0008] An infrared sensor is disposed within at least one of the grinding grooves, the infrared sensor surrounding the effective grinding area of the grinding pad; the infrared sensor includes alternating infrared emitting units and infrared receiving units; wherein, the infrared emitting units are used to emit infrared light, and the infrared receiving units are used to receive reflected infrared light;
[0009] A processing unit electrically connected to the infrared sensor is used to receive the sensing signal from the infrared sensor and determine whether there is residual polishing fluid on the upper surface based on the sensing signal.
[0010] Optionally, the spacing between adjacent infrared emitting units and infrared receiving units is 0.1 mm to 5 mm, and the wavelength range of the infrared light emitted by the infrared emitting units is 850 nm to 1550 nm.
[0011] Optionally, the depth of the grinding groove is 5mm to 10mm and the width is 1mm to 10mm; wherein, the width of the grinding groove equipped with an infrared sensor is greater than the width of the grinding groove without an infrared sensor.
[0012] Optionally, the height of the infrared sensor is less than the depth of the grinding groove.
[0013] Optionally, the abrasive pad is a circular abrasive pad.
[0014] Optionally, the infrared sensor is encapsulated in a waterproof and corrosion-resistant material and coated with a wear-resistant coating.
[0015] Optionally, the infrared sensor is disposed in a grinding groove away from the center of the grinding pad.
[0016] Optional, also includes:
[0017] A feedback control unit is used to trigger abrasive pad cleaning operation based on the determination result of the processing unit.
[0018] Secondly, embodiments of this application provide a polishing system, including: the polishing pad as described above.
[0019] Optional, also includes:
[0020] A support platform is used to support the grinding pad;
[0021] A grinding head is used to hold the object to be ground.
[0022] The surface of the device to be polished is in contact with the upper surface of the polishing pad so that the surface of the device to be polished is polished when the polishing pad rotates.
[0023] Compared with the prior art, the technical solution of this application has the following advantages:
[0024] This application provides a polishing pad and a polishing system. The polishing pad includes: an upper surface and a lower surface opposite to each other. The upper surface is used to polish the device to be polished, and the lower surface is used to fix the polishing pad to a preset position. The upper surface has a plurality of polishing grooves. An infrared sensor is disposed in at least one of the polishing grooves, and the infrared sensor surrounds the effective polishing area of the polishing pad. The infrared sensor includes alternating infrared emitting units and infrared receiving units. The infrared emitting units emit infrared light, and the infrared receiving units receive reflected infrared light. A processing unit is electrically connected to the infrared sensor, and the processing unit receives the sensing signal from the infrared sensor and determines whether there is residual polishing fluid on the upper surface based on the sensing signal.
[0025] As can be seen, the polishing pad provided in this application embodiment has multiple polishing grooves on its upper surface, with at least one groove containing an infrared sensor that includes alternating infrared emitting units and infrared receiving units. When the machine needs to inspect the polishing pad after polishing, the infrared emitting unit emits infrared light. After the infrared light shines on the surface of the polishing pad, if there is residual polishing slurry, its reflection characteristics will differ from those of the polishing pad itself due to the different materials. The infrared receiving unit can receive the reflected infrared light, allowing the processing unit to receive the sensing signal from the infrared sensor and determine whether there is residual polishing slurry on the upper surface based on the sensing signal. This allows for real-time monitoring of whether there is residual polishing slurry on the polishing pad after each wafer polishing at the machine, thus avoiding problems caused by incomplete rinsing of residual polishing slurry and improving the polishing effect of the polishing pad. Attached Figure Description
[0026] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of this application. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.
[0027] Figure 1 This is a schematic diagram of an optional structure of the abrasive pad provided in an embodiment of this application;
[0028] Figure 2 This is a schematic diagram of an optional structure of the polishing pad with residual polishing fluid provided in the embodiments of this application;
[0029] Figure 3 This is a schematic diagram of an optional structure of the grinding system provided in the embodiments of this application. Detailed Implementation
[0030] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.
[0031] As the background technology shows, with the continuous development of industry, planarization processes are becoming increasingly popular in the production of various components. Chemical mechanical polishing (CMP) is frequently used in planarization processes. The specific operation of CMP is as follows: a polishing pad is first attached to a polishing platform, a polishing slurry containing chemicals is supplied to the polishing pad, pressure is applied to the workpiece (such as a semiconductor wafer), causing it to adhere tightly to the polishing pad, and relative motion is generated between the workpiece and the polishing pad. Under the combined influence of mechanical friction caused by relative motion and the chemical action of the polishing slurry, part of the surface material of the workpiece is removed, making its surface tend to be flat, thereby achieving the purpose of planarization. However, the polishing effect of current polishing pads needs further improvement.
[0032] The inventors discovered that the reason affecting the polishing effect of the polishing pad lies in a common defect in the chemical mechanical polishing (CMP) process: CMP slurry residue defect. That is, after CMP, a small amount of polishing slurry residue is always not completely rinsed off. The presence of this residue alters the physical and chemical properties of the polishing pad surface, such as making the surface uneven or affecting the coefficient of friction between the pad and the workpiece. Furthermore, this residual polishing slurry may adversely affect subsequent process steps, such as affecting the contact state between the pad and the wafer in the next process, or reacting with other process gases or liquids, thus impacting the quality of the final product.
[0033] Furthermore, this defect can currently only be detected by specific testing equipment; there is no device available at the machine end to monitor whether there is residual polishing slurry on the polishing pad after each wafer polishing.
[0034] In view of this, embodiments of this application provide a polishing pad and a polishing system, wherein the polishing pad includes: an upper surface and a lower surface opposite to each other, the upper surface being used for polishing the device to be polished, and the lower surface being used for fixing the polishing pad to a preset position, wherein the upper surface is provided with a plurality of polishing grooves; an infrared sensor disposed in at least one of the polishing grooves, the infrared sensor surrounding the effective polishing area of the polishing pad; the infrared sensor includes alternating infrared emitting units and infrared receiving units; wherein the infrared emitting units are used for emitting infrared rays, and the infrared receiving units are used for receiving reflected infrared rays; and a processing unit electrically connected to the infrared sensor, the processing unit being used for receiving the sensing signal of the infrared sensor and determining whether there is residual polishing fluid on the upper surface based on the sensing signal.
[0035] As can be seen, the polishing pad provided in this application embodiment has multiple polishing grooves on its upper surface, with at least one groove containing an infrared sensor that includes alternating infrared emitting units and infrared receiving units. When the machine needs to inspect the polishing pad after polishing, the infrared emitting unit emits infrared light. After the infrared light shines on the surface of the polishing pad, if there is residual polishing slurry, its reflection characteristics will differ from those of the polishing pad itself due to the different materials. The infrared receiving unit can receive the reflected infrared light, allowing the processing unit to receive the sensing signal from the infrared sensor and determine whether there is residual polishing slurry on the upper surface based on the sensing signal. This allows for real-time monitoring of whether there is residual polishing slurry on the polishing pad after each wafer polishing at the machine, thus avoiding problems caused by incomplete rinsing of residual polishing slurry and improving the polishing effect of the polishing pad.
[0036] The technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments.
[0037] refer to Figure 1 , Figure 1 This is a schematic diagram of an optional structure of the abrasive pad provided in an embodiment of this application. For example... Figure 1 As shown, the abrasive pad includes:
[0038] The upper surface 100 and the lower surface (not shown in the figure) are opposite to each other. The upper surface is used to grind the device to be ground, and the lower surface is used to fix the grinding pad to a preset position. The upper surface 100 is provided with a plurality of grinding grooves 101.
[0039] The abrasive pad may be made of a polymer substrate, such as polyester, polyether, polyurethane, polycarbonate, polyacrylate, polybutadiene, or other polymer substrates synthesized from suitable thermosetting resins or thermoplastic resins.
[0040] In an optional implementation, the abrasive pad can be manufactured by first forming a semi-finished product, for example, by molding or extrusion molding to form a sheet-like semi-finished product; or by first casting to form a cylindrical semi-finished product, and then cutting it into sheet-like semi-finished products. Next, a cutting device is used to cut the semi-finished product to the size of the abrasive pad, followed by processes such as creating abrasive grooves and the back of the abrasive pad to complete the manufacturing of the abrasive pad. Furthermore, a buffer layer can be optionally placed under the abrasive pad to meet different abrasive pad requirements.
[0041] The grinding groove 101 can be manufactured by means of mechanical means (e.g., using a milling machine equipped with a drill bit or saw blade, i.e., fixing the grinding pad on the milling machine table and rotating or moving the drill bit or saw blade on the machine table to cut the upper surface of the grinding pad to form a grinding groove by moving the cutting tool on the machine table; or fixing the grinding pad on a rotatable or parallel-movable machine table and using a fixed cutting tool on the machine table to move the grinding pad on the machine table to cut the grinding pad to form a grinding groove), mold transfer, or etching (e.g., using chemical etching or laser processing). This application embodiment does not limit this.
[0042] In this specific implementation, the polishing pad is a circular polishing pad. Designing the polishing pad as a circle facilitates its installation and fixation on a rotating polishing platform, ensuring good adaptation to the platform's rotational movement and guaranteeing stable operation during the polishing process. Simultaneously, the circular shape helps achieve uniform force and polishing of the workpiece (such as a semiconductor wafer) on the polishing pad, as wafers are typically circular, and a circular polishing pad can better cover the wafer's surface, reducing uneven polishing issues caused by shape mismatch.
[0043] Multiple concentric circular grinding grooves are formed on the upper surface of the grinding pad. These grooves can hold the grinding fluid, allowing it to be evenly distributed across the pad surface and providing a stable chemical environment for grinding. Furthermore, the grinding pad also includes flow channels connecting the grinding grooves, facilitating the discharge of debris and waste fluid generated during grinding, preventing debris accumulation on the pad surface that could affect grinding performance and product quality. Additionally, the concentric circular grinding groove design allows the grinding fluid to flow and distribute more smoothly along the grooves under centrifugal force, further improving grinding uniformity. In an optional implementation, the depth of the grinding grooves is 5mm to 10mm, and the width is 1mm to 10mm.
[0044] If the grinding groove is too shallow, it may not be able to hold enough grinding fluid, resulting in insufficient supply of grinding fluid during the grinding process and affecting the grinding effect. At the same time, debris and waste fluid may not be effectively discharged and are prone to accumulate in the grinding groove. If the grinding groove is too deep, although it can hold more grinding fluid, it may increase the manufacturing difficulty and cost of the grinding pad. Moreover, during the grinding process, excessively deep grinding grooves may cause uneven distribution of grinding pressure, affecting the smoothness of the surface. Therefore, the grinding groove depth in this embodiment is 5mm to 10mm.
[0045] If the grinding groove width is too narrow, it may restrict the flow of the grinding slurry, causing poor flow and preventing the timely supply of fresh slurry to the grinding area, thus affecting the chemical action of grinding. Simultaneously, it hinders the removal of debris, easily leading to clogging of the grinding groove. Conversely, if the grinding groove width is too wide, it reduces the effective contact area between the grinding pad and the workpiece, lowering grinding efficiency and potentially affecting the uniformity of grinding. Therefore, the grinding groove width in this embodiment is 1mm to 10mm.
[0046] An infrared sensor 102 is disposed within at least one of the polishing grooves 101, the infrared sensor 102 surrounding the effective polishing area of the polishing pad; the infrared sensor 102 includes alternating infrared emitting units 1021 and infrared receiving units 1022; wherein, the infrared emitting unit 1021 is used to emit infrared light, and the infrared receiving unit 1022 is used to receive reflected infrared light. The infrared sensor 102 surrounding the effective polishing area of the polishing pad helps to achieve omnidirectional or multi-angle infrared emission and reception, improving the detection coverage or accuracy. The effective polishing area refers to the area of the polishing pad where the polishing grooves are provided.
[0047] When the polishing pad needs to be inspected at the machine end, the infrared emitting unit emits infrared light. When the infrared light shines on the surface of the polishing pad, if there is residual polishing slurry, its reflection characteristics will differ from the polishing pad itself due to the different materials of the residual polishing slurry. The infrared receiving unit can receive the reflected infrared light, allowing the processing unit to receive the sensing signal from the infrared sensor and determine whether there is residual polishing slurry on the surface based on the sensing signal. This allows for real-time monitoring at the machine end to check for residual polishing slurry on the polishing pad after each wafer polishing, thus avoiding problems caused by incomplete rinsing of residual polishing slurry and improving the polishing effect of the polishing pad.
[0048] In an optional implementation, the spacing between adjacent infrared emitting units and infrared receiving units is 0.1 mm to 5 mm, and the wavelength range of the infrared light emitted by the infrared emitting units is 850 nm to 1550 nm. Different spacings affect the interaction effect of infrared light, thus affecting the sensitivity and accuracy of detection. Therefore, in this embodiment, the spacing between adjacent infrared emitting units and infrared receiving units is 0.1 mm to 5 mm. Furthermore, infrared light of different wavelengths has different characteristics, such as penetration ability and scattering characteristics. In specific implementations, the wavelength range of infrared light can be selected based on actual application requirements. For example, within this wavelength range, infrared light can better adapt to specific environmental conditions, or the matching effect with the receiving unit is better, thereby achieving more effective detection. In this embodiment, the selected wavelength range of infrared light is 850 nm to 1550 nm.
[0049] The infrared sensor is encapsulated in a waterproof and corrosion-resistant material, and its surface is coated with a wear-resistant coating. This waterproof and corrosion-resistant encapsulation protects the internal electronic components and structure from external moisture and corrosive substances, improving the module's reliability and lifespan. In addition to the waterproof and corrosion-resistant encapsulation, the infrared sensor surface is also coated with a wear-resistant coating. This coating increases the module's surface hardness and wear resistance, reducing surface damage caused by friction, further protecting the module's performance, and ensuring stable operation during long-term use.
[0050] Setting up an infrared sensor within the grinding grooves of a grinding pad requires sufficient space to house the module. Wider grinding grooves ensure the infrared sensor can be installed smoothly and provide ample space for fixing and other operations, preventing installation difficulties or module damage due to insufficient space. Appropriate groove width provides a relatively stable working environment for the infrared sensor. If the grooves are too narrow, they may compress the module or restrict its range of motion, affecting infrared emission and reception, thus reducing detection accuracy and reliability. Wider grooves also make it easier for operators to access the module during maintenance, repair, or replacement of the infrared sensor, facilitating related operations and improving work efficiency. Therefore, in this embodiment, the width of the grinding groove containing the infrared sensor is greater than the width of the grinding groove without the infrared sensor.
[0051] Furthermore, during the grinding process, the grinding pad is subjected to various forces, such as grinding pressure and friction. If the height of the infrared sensor is equal to or greater than the depth of the grinding groove, the infrared sensor will be directly impacted or squeezed by the grinding object or grinding tool, leading to damage to the infrared sensor. Therefore, in this embodiment, the height of the infrared sensor is less than the depth of the grinding groove.
[0052] In this embodiment, the infrared sensor is disposed in a grinding groove away from the center of the grinding pad. Distributing the infrared sensor in a grinding groove away from the center of the grinding pad expands its detection range and allows for better coverage of other areas of the grinding pad.
[0053] It should be noted that, in this embodiment, the infrared sensor is set in the outermost grinding groove among the plurality of grinding grooves formed on the upper surface of the grinding pad as an example. In other embodiments, infrared sensors may also be set in other grinding grooves among the plurality of grinding grooves formed on the upper surface of the grinding pad, and this embodiment does not limit this.
[0054] A processing unit electrically connected to the infrared sensor is used to receive the sensing signal from the infrared sensor and determine whether there is residual polishing fluid on the upper surface based on the sensing signal.
[0055] The processing unit and the infrared sensor establish communication via an electrical connection. The infrared emitting unit in the infrared sensor emits infrared light, which is reflected after hitting the polishing pad. The reflected infrared light is then received by the infrared receiving unit. The processing unit can receive the sensing signal from the infrared sensor and determine whether there is residual polishing slurry on the upper surface based on the sensing signal.
[0056] The processing unit can analyze the received reflected infrared light. For example, by measuring the reflection time and intensity of the reflected infrared light, information such as the distance between the reflecting object and the infrared sensor, and the material properties of the reflecting object can be obtained. Figure 2 The exemplary schematic diagram shows an optional structure for a polishing pad with residual polishing slurry. If a large amount of debris accumulates on the surface of the polishing pad, the reflection characteristics of the debris for infrared light differ from those of a clean polishing pad surface. Consequently, the reflection time and intensity of the reflected infrared light will also change. The processing unit can further determine the state of the polishing pad, such as whether there is residual polishing slurry, by analyzing the reflection time and intensity of the reflected infrared light.
[0057] In an optional implementation, the processing unit also has a pattern recognition function, comparing the received reflected infrared light with a pre-stored standard pattern. If the pattern of the reflected infrared light differs significantly from the standard pattern under clean polishing pad conditions, it can be determined that the polishing pad condition does not meet the requirements of the standard pattern.
[0058] In an optional implementation, the abrasive pad may further include a feedback control unit for triggering a cleaning operation of the abrasive pad based on the determination result of the processing unit.
[0059] The feedback control unit is connected to the processing unit and receives the analysis results of the reflected infrared light from the processing unit. Based on the received results, the feedback control unit makes a decision. If the result indicates the presence of residual polishing slurry on the polishing pad, the feedback control unit triggers a polishing pad cleaning operation. This cleaning operation may include activating the polishing pad's self-cleaning system or issuing a cleaning prompt signal to the operator for manual cleaning. In this way, the cleanliness of the polishing pad can be maintained in a timely manner, ensuring the stability of the polishing process and the quality of the polishing.
[0060] As can be seen, the polishing pad provided in this application embodiment has multiple polishing grooves on its upper surface, with at least one groove containing an infrared sensor that includes alternating infrared emitting units and infrared receiving units. When the machine needs to inspect the polishing pad after polishing, the infrared emitting unit emits infrared light. After the infrared light shines on the surface of the polishing pad, if there is residual polishing slurry, its reflection characteristics will differ from those of the polishing pad itself due to the different materials. The infrared receiving unit can receive the reflected infrared light, allowing the processing unit to receive the sensing signal from the infrared sensor and determine whether there is residual polishing slurry on the upper surface based on the sensing signal. This allows for real-time monitoring of whether there is residual polishing slurry on the polishing pad after each wafer polishing at the machine, thus avoiding problems caused by incomplete rinsing of residual polishing slurry and improving the polishing effect of the polishing pad.
[0061] This application also provides a polishing system, which includes: the polishing pad as described above.
[0062] Further reference Figure 3 The exemplary schematic diagram of an optional structure of a grinding system shows that the grinding system may further include:
[0063] The support platform 200 is used to support the grinding pad 10;
[0064] Grinding head 300 is used to fix the device to be ground 310;
[0065] The surface of the device to be polished 310 is in contact with the upper surface 100 of the polishing pad 10 so that the surface of the device to be polished 310 is polished when the polishing pad 10 rotates.
[0066] A polishing head 300 is disposed above a polishing pad 10, and a device 310 to be polished is fixed on the polishing head 300. In one embodiment, the polishing head 300 may have an air bladder (not shown in the figure), and the device 310 to be polished may be attached to the outer surface of the air bladder. The polishing head 300 can control the internal air pressure of the air bladder by inputting gas to apply pressure to the device 310 to be polished, thereby pressing the device 310 onto the surface of the polishing pad 10, so that the surface to be polished of the device 310 contacts the upper surface 100 of the polishing pad 10, so that the surface to be polished of the device 310 is polished when the polishing pad 10 rotates. The device 310 to be polished may be a semiconductor wafer, a group III / V wafer, a memory element carrier, a ceramic substrate, a polymer substrate, or a glass substrate, etc., and this embodiment does not limit the types of substrates.
[0067] Specifically, when the support platform 200 rotates in a fixed direction, it simultaneously drives the polishing pad 10 attached to the surface of the support platform 200, thereby allowing the polishing pad 10 to rotate in the same direction as the support platform 200. The polishing head 300 also rotates in a fixed direction, simultaneously driving the device to be polished 310 attached to the polishing head 300, thereby allowing the device to be polished 310 to rotate in the same direction as the polishing head 300. In this embodiment, the rotation direction of the polishing head can be the same as or different from the rotation direction of the support platform.
[0068] The foregoing describes multiple embodiment schemes provided by the embodiments of this application. The optional methods described in each embodiment scheme can be combined and cross-referenced with each other without conflict, thereby extending to a variety of possible embodiment schemes. These can all be considered as the embodiment schemes disclosed and published by the embodiments of this application.
[0069] While the embodiments disclosed above are described in this application, this application is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of this application; therefore, the scope of protection of this application should be determined by the scope defined in the claims.
Claims
1. An abrasive pad, characterized in that, include: The upper and lower surfaces are opposite to each other. The upper surface is used to grind the device to be ground, and the lower surface is used to fix the grinding pad to a preset position. The upper surface is provided with a plurality of grinding grooves. An infrared sensor is disposed within at least one of the grinding grooves, the infrared sensor surrounding the effective grinding area of the grinding pad; the infrared sensor includes alternating infrared emitting units and infrared receiving units; wherein, the infrared emitting units are used to emit infrared light, and the infrared receiving units are used to receive reflected infrared light; A processing unit electrically connected to the infrared sensor is used to receive the sensing signal from the infrared sensor and determine whether there is residual polishing fluid on the upper surface based on the sensing signal.
2. The abrasive pad according to claim 1, characterized in that, The distance between adjacent infrared emitting units and infrared receiving units is 0.1 mm to 5 mm, and the wavelength range of the infrared light emitted by the infrared emitting units is 850 nm to 1550 nm.
3. The abrasive pad according to claim 1, characterized in that, The depth of the grinding groove is 5mm to 10mm and the width is 1mm to 10mm; wherein, the width of the grinding groove equipped with an infrared sensor is greater than the width of the grinding groove without an infrared sensor.
4. The abrasive pad according to claim 3, characterized in that, The height of the infrared sensor is less than the depth of the grinding groove.
5. The abrasive pad according to claim 1, characterized in that, The abrasive pad is a circular abrasive pad.
6. The abrasive pad according to claim 1, characterized in that, The infrared sensor is encapsulated in waterproof and corrosion-resistant materials and has a wear-resistant coating on its surface.
7. The abrasive pad according to claim 1, characterized in that, The infrared sensor is located in the grinding groove, away from the center of the grinding pad.
8. The abrasive pad according to claim 1, characterized in that, Also includes: A feedback control unit is used to trigger abrasive pad cleaning operation based on the determination result of the processing unit.
9. A grinding system, characterized in that, include: The abrasive pad as described in any one of claims 1-8.
10. The grinding system according to claim 9, characterized in that, Also includes: A support platform is used to support the grinding pad; A grinding head is used to hold the object to be ground. The surface of the device to be polished is in contact with the upper surface of the polishing pad so that the surface of the device to be polished is polished when the polishing pad rotates.