Gas introduction device for MPCVD reaction cavity

Abstract

The utility model discloses a gas leading-in device for an MPCVD reaction cavity, and relates to the technical field of chemical vapor deposition. In the process that a gas input pipeline is connected with a reaction gas source to output reaction gas of the reaction gas source to the reaction cavity, a plurality of mutually independent gas input pipelines are firstly connected to a static mixer; after a plurality of different types of reaction gases are statically mixed by the static mixer, primary mixed gas is output, and then the primary mixed gas is fully buffered and uniformly distributed through the buffer pressure-stabilizing cavity and the porous distribution plate arranged inside, so that the gas pulsation and pressure fluctuation of the primary mixed gas are eliminated, and the gas flow fluctuation and pressure fluctuation of the primary mixed gas are reduced. By adopting the static mixer with a special structure and the buffer pressure stabilizing cavity, uniform mixing and stable introduction of reaction gas are realized, the quality uniformity and performance consistency of a deposited film are effectively improved, the stability of gas flow and state is ensured, and the stability and repeatability of a deposition process are improved.

Description

Technical Field

[0001] This utility model relates to the field of chemical vapor deposition technology, and in particular to a gas introduction device for an MPCVD reaction chamber. Background Technology

[0002] MPCVD (Microwave Plasma Chemical Vapor Deposition) uses a microwave source to generate microwaves, which, under the influence of the microwave field, excite the reactive gas into a plasma state. Plasma is an ionized gaseous substance composed of positive and negative ions generated after atoms and atomic groups have lost some electrons. The high temperature of the plasma allows the substrate to be heated to a certain temperature, enabling film deposition at a rate on the micrometer scale per hour.

[0003] In MPCVD technology, the uniform mixing of reaction gases and their efficient and stable introduction into the reaction chamber play a crucial role in the quality and growth efficiency of the deposited thin film.

[0004] Existing gas mixing and introduction methods have several problems, such as uneven gas mixing leading to inconsistent chemical reactions within the reaction chamber, resulting in significant differences in the thickness, composition, and properties of the deposited films. Furthermore, the gas introduction process is susceptible to airflow disturbances and pipeline resistance, causing unstable gas flow rates and affecting the stability and repeatability of the deposition process.

[0005] Therefore, achieving uniform gas mixing and improving the deposition quality and efficiency of MPCVD is one of the key focuses of work for those skilled in the art. Utility Model Content

[0006] The purpose of this invention is to provide a gas introduction device for an MPCVD reaction chamber, so as to achieve uniform gas mixing and stable and efficient introduction of gas into the reaction chamber, thereby improving the quality and growth efficiency of the deposited film.

[0007] To solve the above-mentioned technical problems, this utility model provides an MPCVD reaction chamber gas introduction device, comprising:

[0008] A gas input pipe has an input end connected to a reaction gas source and an output end for outputting the reaction gas from the reaction gas source.

[0009] A static mixer, with its input end connected to multiple independent gas input pipes, is used to statically mix various types of reactive gases output from the multiple gas input pipes and output a primary mixed gas.

[0010] The buffer and pressure regulating chamber is connected to the outlet of the static mixer. It is equipped with a porous distribution plate inside, which is used to fully buffer and uniformly distribute the primary mixed gas, thereby eliminating the airflow pulsation and pressure fluctuation of the primary mixed gas, and then outputting a steady-state mixed gas to the reaction chamber.

[0011] It also includes a gas inlet pipe disposed between the buffer pressure stabilizing chamber and the reaction chamber, for connecting the buffer pressure stabilizing chamber and the reaction chamber, and for inputting the steady-state mixed gas into the reaction chamber.

[0012] It also includes a gas filter installed in the gas inlet pipe, which filters the steady-state mixed gas and outputs it to the reaction chamber.

[0013] It also includes a pressure sensor and a temperature sensor installed in the buffer pressure stabilizing chamber, used to detect the gas pressure and temperature of the steady-state mixed gas output to the reaction chamber.

[0014] It also includes a gas distribution nozzle disposed at the output end of the gas inlet pipe, the gas distribution nozzle being provided with a plurality of uniformly distributed micro-spray holes for uniformly injecting the steady-state mixed gas into the reaction chamber.

[0015] The system also includes a mass flow meter, a first flow regulating valve, and a second flow regulating valve installed in the gas input pipeline. The mass flow meter is located between the first flow regulating valve and the second flow regulating valve. The first flow regulating valve is located upstream of the mass flow meter and is used to coarsely adjust the output gas flow rate of the gas input pipeline. The second flow regulating valve is located downstream of the mass flow meter and is used to finely adjust the output gas flow rate of the gas input pipeline.

[0016] It also includes a display connected to the mass flow meter, the first flow regulating valve, the second flow regulating valve, the pressure sensor, and the temperature sensor, for displaying the flow rate information, coarse regulation information, fine regulation information, pressure information, and temperature information of the steady-state mixed gas in the gas inlet pipe.

[0017] It also includes a PLC controller connected to the mass flow meter, the first flow regulating valve, the second flow regulating valve, the pressure sensor, and the temperature sensor, for controlling the operating status of the first flow regulating valve and the second flow regulating valve according to external instructions and the current status information of the gas inlet pipeline and the gas information of the steady-state mixed gas.

[0018] The number of static mixers is at least two, and multiple static mixers are connected in series.

[0019] The static mixer is an SV type static mixer, an SK type static mixer, an SX type static mixer, an SH type static mixer, or an SL type static mixer.

[0020] The MPCVD reaction chamber gas introduction device provided in this embodiment of the invention has the following advantages compared with the prior art:

[0021] The MPCVD reaction chamber gas introduction device provided in this embodiment of the invention, in the process of connecting the gas input pipeline to the reaction gas source and outputting the reaction gas from the gas source to the reaction chamber, first connects multiple independent gas input pipelines to a static mixer. After the static mixer statically mixes various types of reaction gases, it outputs a primary mixed gas. Then, through a buffer and pressure stabilizing chamber, the primary mixed gas is fully buffered and evenly distributed by an internally set porous distribution plate, eliminating airflow pulsation and pressure fluctuations in the primary mixed gas. By adopting a static mixer and buffer and pressure stabilizing chamber with a special structure, uniform mixing and stable introduction of reaction gases are achieved, effectively improving the quality uniformity and performance consistency of the deposited film, ensuring the stability of gas flow and state, and improving the stability and repeatability of the deposition process. Attached Figure Description

[0022] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0023] Figure 1 A schematic diagram of one embodiment of the solid flow control device provided by this utility model;

[0024] Among them, gas input pipe-1, mass flow meter-3, first flow regulating valve-2, second flow regulating valve-4, static mixer-5, buffer pressure regulating chamber-6, reaction chamber-7, gas filter-8, pressure sensor-9, and temperature sensor-10. Detailed Implementation

[0025] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.

[0026] Please refer to Figure 1 , Figure 1 This is a schematic diagram of one embodiment of the solid flow control device provided by this utility model.

[0027] In one specific embodiment, the MPCVD reaction chamber gas introduction device includes:

[0028] Gas input pipe 1, with its input end connected to a reaction gas source and its output end used to output the reaction gas from the reaction gas source;

[0029] The static mixer 5 has its input end connected to multiple independent gas input pipes 1, and is used to statically mix various types of reaction gases output from the multiple gas input pipes 1 to output a primary mixed gas.

[0030] The buffer and pressure regulating chamber 6 is connected to the outlet of the static mixer 5. It is equipped with a porous distribution plate inside, which is used to fully buffer and evenly distribute the primary mixed gas through the porous distribution plate, and after eliminating the airflow pulsation and pressure fluctuation of the primary mixed gas, output a steady mixed gas to the reaction chamber 7.

[0031] In the process of connecting the gas input pipe 1 to the reaction gas source and outputting the reaction gas from the reaction gas source to the reaction chamber 7, multiple independent gas input pipes 1 are first connected to the static mixer 5. After the static mixer 5 statically mixes various types of reaction gases, the primary mixed gas is output. Then, it passes through the buffer and pressure stabilizing chamber 6, which is used to fully buffer and uniformly distribute the primary mixed gas through the porous distribution plate inside, eliminating the airflow pulsation and pressure fluctuation of the primary mixed gas. By adopting the specially structured static mixer 5 and buffer and pressure stabilizing chamber 6, uniform mixing and stable introduction of reaction gases are achieved, effectively improving the quality uniformity and performance consistency of the deposited film, ensuring the stability of gas flow and state, and improving the stability and repeatability of the deposition process.

[0032] To further facilitate gas delivery between the buffer pressure stabilizing chamber 6 and the reaction chamber 7, and to facilitate connection between the two without being limited by the distance between them, in one embodiment, the MPCVD reaction chamber 7 gas introduction device further includes a gas introduction pipe disposed between the buffer pressure stabilizing chamber 6 and the reaction chamber 7, for connecting the buffer pressure stabilizing chamber 6 and the reaction chamber 7, and for inputting the steady-state mixed gas into the reaction chamber 7.

[0033] By setting a gas inlet pipe between the buffer pressure stabilizing chamber 6 and the reaction chamber 7, the position between the two can be freely connected without being restricted during the connection process. This also solves the problem of not being able to connect them, improves the convenience of connection, and increases connection efficiency.

[0034] This application does not impose any restrictions on the material, size, or connection method of the gas introduction pipe.

[0035] To reduce potential impurities in the gas, in one embodiment, the gas introduction device of the MPCVD reaction chamber 7 further includes a gas filter 8 disposed in the gas introduction pipe, which filters the steady-state mixed gas and outputs it to the reaction chamber 7.

[0036] By installing a gas filter 8 in the gas inlet pipe, the passing steady-state mixed gas can be filtered to remove any impurities that may be present, thereby improving the purity of the gas entering the reaction chamber, increasing reaction efficiency, and reducing interference with subsequent reactions.

[0037] This application does not limit the type of gas filter 8.

[0038] To further improve the information on the temperature and other parameters input into the reaction chamber 7, in one embodiment, the gas introduction device for the MPCVD reaction chamber 7 further includes a pressure sensor 9 and a temperature sensor 10 disposed in the buffer pressure stabilizing chamber, for detecting the gas pressure and temperature of the steady-state mixed gas output to the reaction chamber 7.

[0039] By installing a pressure sensor 9 and a temperature sensor 10 in the buffer pressure stabilizing chamber, the gas pressure and temperature of the steady-state mixed gas output to the reaction chamber 7 can be detected, thereby precisely controlling the subsequent reaction conditions and improving reaction efficiency, deposition efficiency, and deposition quality.

[0040] This application does not specify the model or installation method of the pressure sensor 9 and the temperature sensor 10.

[0041] To further improve the uniformity of gas distribution, in one embodiment, the gas introduction device of the MPCVD reaction chamber 7 further includes a gas distribution nozzle disposed at the output end of the gas introduction pipe. The gas distribution nozzle is provided with a plurality of uniformly distributed micro-spray holes for uniformly injecting the steady-state mixed gas into the reaction chamber 7.

[0042] By setting a gas distribution nozzle at one end of the inlet pipe near the reaction chamber 7, the nozzle has multiple evenly distributed micro-spray holes, ensuring that the mixed gas can be evenly injected into the reaction chamber 7, rather than directly introducing the mixed gas at one point. This allows the mixed gas to be quickly and evenly distributed after entering the reaction chamber 7, improving the efficiency of the reaction.

[0043] This application does not impose any limitations on the size of the gas distribution nozzle, the micro-orifice, or the distribution of the micro-orifice.

[0044] To further improve the regulation of various gas flow rates, in one embodiment, the gas introduction device of the MPCVD reaction chamber 7 further includes a mass flow meter 3, a first flow regulating valve 2, and a second flow regulating valve 4 disposed on the gas input pipeline 1. The mass flow meter 3 is located between the first flow regulating valve 2 and the second flow regulating valve 4. The first flow regulating valve 2 is located upstream of the mass flow meter 3 and is used to coarsely adjust the output gas flow rate of the gas input pipeline 1. The second flow regulating valve 4 is located downstream of the mass flow meter 3 and is used to finely adjust the output gas flow rate of the gas input pipeline 1.

[0045] By setting up a mass flow meter 3, a first flow regulating valve 2, and a second flow regulating valve 4, the gas flow rate can be adjusted and detected in real time, thereby improving the accuracy and efficiency of gas introduction.

[0046] This application does not limit the type or installation method of the mass flow meter 3, the first flow regulating valve 2, and the second flow regulating valve 4.

[0047] To improve management efficiency, in one embodiment, the gas introduction device of the MPCVD reaction chamber 7 further includes a display connected to the mass flow meter 3, the first flow regulating valve 2, the second flow regulating valve 4, the pressure sensor 9, and the temperature sensor 10, for displaying the flow rate information, coarse regulation information, fine regulation information, pressure information, and temperature information of the steady-state mixed gas in the gas introduction pipeline.

[0048] By setting up a display to show the flow rate, coarse adjustment, fine adjustment, pressure, and temperature information of the steady-state mixed gas in the gas inlet pipeline, the status information of the equipment and gas can be obtained in real time, improving management efficiency.

[0049] This application does not impose any limitations on the structure of the display or the display method.

[0050] To improve the automation level of the equipment, increase control efficiency, and enhance the accuracy of gas introduction, in one embodiment, the gas introduction device of the MPCVD reaction chamber 7 further includes a PLC controller connected to the mass flow meter 3, the first flow regulating valve 2, the second flow regulating valve 4, the pressure sensor 9, and the temperature sensor 10. This PLC controller is used to control the operating status of the first flow regulating valve 2 and the second flow regulating valve 4 based on external commands, the current status information of the gas introduction pipeline, and the gas information of the steady-state mixed gas.

[0051] By setting up a PLC controller, based on external instructions and the current status information of the gas inlet pipeline and the gas information of the steady-state mixed gas, the operating status of the first flow regulating valve 2 and the second flow regulating valve can be controlled. This enables efficient control of the relevant valves based on feedback sensor information, thereby improving control efficiency.

[0052] This application includes, but is not limited to, using a PLC controller for equipment control.

[0053] In this application, a static mixer 5 is used for gas mixing. There are no limitations on its quantity or type. The number of static mixers 5 can be one or more, and multiple static mixers 5 can be connected in series.

[0054] The static mixer 5 is an SV type static mixer, SK type static mixer, SX type static mixer, SH type static mixer, or SL type static mixer, or other types of static mixer.

[0055] In one embodiment, the gas introduction device of the MPCVD reaction chamber 7 includes five independent gas input pipes 1, each connected to a different type of reaction gas source. A high-precision mass flow meter 3 and a flow regulating valve are installed on each input pipe to precisely control the flow rate of each gas.

[0056] After the gas enters through the gas inlet pipe 1, it is connected to a static mixer 5 with a special structure. This mixer has multiple layers of staggered helical blades inside, with adjacent blades rotating in opposite directions. As the gas passes through, it is repeatedly divided, rotated, and mixed by the blades, promoting thorough diffusion and uniform mixing of different gases.

[0057] The outlet of the static mixer 5 is connected to the buffer and pressure regulating chamber 6. The buffer and pressure regulating chamber 6 has a large volume and is equipped with a porous distribution plate inside, which allows the mixed gas to be fully buffered and evenly distributed in the chamber, eliminating airflow pulsation and pressure fluctuation.

[0058] The buffer pressure regulating chamber 6 is connected to the reaction chamber 7 via a gas inlet pipe, with a gas filter 8 installed in the middle of the gas inlet pipe. A pressure sensor 9 and a temperature sensor 10 are installed on the inlet pipe to monitor the gas pressure and temperature entering the reaction chamber 7 in real time. Simultaneously, a gas distribution nozzle with multiple evenly distributed fine nozzle holes is installed at the end of the inlet pipe near the reaction chamber 7 to ensure that the mixed gas is evenly injected into the reaction chamber 7.

[0059] The specific usage method is as follows:

[0060] Gas flow rate setting: The flow rate of each reaction gas is precisely set according to the deposition process requirements using mass flow meter 3 and flow regulating valve.

[0061] Gas mixing: Different types of reactive gases enter from their respective input pipes and are thoroughly mixed in the static mixer 5 by the action of multiple spiral blades.

[0062] Buffering and stabilizing: The mixed gas enters the buffering and stabilizing chamber 6, where it is evenly distributed and pressure fluctuations are buffered by the porous distribution plate, thus stabilizing the gas state.

[0063] Monitoring and introduction: The gas pressure and temperature in the gas introduction pipeline are monitored in real time by pressure sensor 9 and temperature sensor 10. The flow regulating valve is finely adjusted according to the monitoring data to ensure that the gas is evenly introduced into the reaction chamber 7 through the gas distribution nozzle at a stable pressure and temperature.

[0064] Equipment assembly: According to the design requirements, connect multiple gas input pipes 1, static mixer 5, buffer pressure stabilizing chamber 6, gas inlet pipe and reaction chamber 7 in sequence, and install mass flow meter 3, flow regulating valve, pressure sensor 9, temperature sensor 10 and gas distribution nozzle.

[0065] Parameter settings: Based on the material and process requirements of the thin film to be deposited, parameters such as the flow rate of each reactive gas, the target pressure and temperature of the reaction chamber 7 are set in the control system.

[0066] Gas mixing and introduction: The reaction gas source is turned on, and the gas enters its respective input pipe according to the set flow rate. It is then mixed in the static mixer 5, pressure-stabilized in the buffer chamber 6, and finally evenly introduced into the reaction chamber 7 through the gas distribution nozzle. Throughout the process, the data from the pressure and temperature sensors 10 are monitored in real time, and the gas flow rate is adjusted as needed via the flow regulating valve to ensure the stability of the deposition process.

[0067] The above-mentioned device has the following beneficial effects:

[0068] The static mixer 5 and the buffer pressure stabilizing chamber 6 with special structures achieve uniform mixing and stable introduction of the reaction gas, which effectively improves the quality uniformity and performance consistency of the deposited film.

[0069] Precise flow control and real-time monitoring systems ensure the stability of gas flow and state, improve the stability and repeatability of the deposition process, and facilitate large-scale industrial production.

[0070] The design of the gas distribution nozzle ensures that the gas is evenly distributed within the reaction chamber 7, improving reaction efficiency, reducing gas waste, and lowering production costs.

[0071] In summary, the MPCVD reaction chamber gas introduction device provided by this utility model embodiment, in the process of connecting the gas input pipeline to the reaction gas source and outputting the reaction gas from the reaction gas source to the reaction chamber, first connects multiple independent gas input pipelines to a static mixer. After the static mixer statically mixes various types of reaction gases, it outputs a primary mixed gas. Then, through a buffer and pressure stabilizing chamber, the primary mixed gas is fully buffered and evenly distributed through an internally set porous distribution plate, eliminating airflow pulsation and pressure fluctuations in the primary mixed gas. By adopting a static mixer and buffer and pressure stabilizing chamber with a special structure, uniform mixing and stable introduction of reaction gases are achieved, effectively improving the quality uniformity and performance consistency of the deposited film, ensuring the stability of gas flow and state, and improving the stability and repeatability of the deposition process.

[0072] The gas introduction device for the MPCVD reaction chamber provided by this utility model has been described in detail above. Specific examples have been used to illustrate the principle and implementation of this utility model. The descriptions of the above embodiments are only for the purpose of helping to understand the method and core idea of ​​this utility model. It should be noted that for those skilled in the art, several improvements and modifications can be made to this utility model without departing from the principle of this utility model, and these improvements and modifications also fall within the protection scope of the claims of this utility model.

Claims

1. A gas introduction device for an MPCVD reaction chamber, characterized in that, include: A gas input pipe has an input end connected to a reaction gas source and an output end for outputting the reaction gas from the reaction gas source. A static mixer, with its input end connected to multiple independent gas input pipes, is used to statically mix various types of reactive gases output from the multiple gas input pipes and output a primary mixed gas. The buffer and pressure stabilizing chamber is connected to the outlet of the static mixer. It is equipped with a porous distribution plate inside, which is used to fully buffer and uniformly distribute the primary mixed gas through the porous distribution plate, and after eliminating the airflow pulsation and pressure fluctuation of the primary mixed gas, output a steady mixed gas to the reaction chamber.

2. The MPCVD reaction chamber gas introduction device as described in claim 1, characterized in that, It also includes a gas inlet pipe disposed between the buffer pressure stabilizing chamber and the reaction chamber, for connecting the buffer pressure stabilizing chamber and the reaction chamber, and for inputting the steady-state mixed gas into the reaction chamber.

3. The MPCVD reaction chamber gas introduction device as described in claim 2, characterized in that, It also includes a gas filter installed in the gas inlet pipe, used to filter the steady-state mixed gas and output it to the reaction chamber.

4. The MPCVD reaction chamber gas introduction device as described in claim 3, characterized in that, It also includes a pressure sensor and a temperature sensor disposed in the buffer pressure stabilizing chamber for detecting the gas pressure and temperature of the steady-state mixed gas output to the reaction chamber.

5. The MPCVD reaction chamber gas introduction device as described in claim 4, characterized in that, It also includes a gas distribution nozzle disposed at the output end of the gas inlet pipe, the gas distribution nozzle being provided with a plurality of uniformly distributed micro-spray holes for uniformly injecting the steady-state mixed gas into the reaction chamber.

6. The MPCVD reaction chamber gas introduction device as described in claim 5, characterized in that, It also includes a mass flow meter, a first flow regulating valve, and a second flow regulating valve installed in the gas input pipeline. The mass flow meter is located between the first flow regulating valve and the second flow regulating valve. The first flow regulating valve is located upstream of the mass flow meter and is used to coarsely adjust the output gas flow rate of the gas input pipeline. The second flow regulating valve is located downstream of the mass flow meter and is used to finely adjust the output gas flow rate of the gas input pipeline.

7. The MPCVD reaction chamber gas introduction device as described in claim 6, characterized in that, It also includes a display connected to the mass flow meter, the first flow regulating valve, the second flow regulating valve, the pressure sensor, and the temperature sensor, for displaying the flow rate information, coarse regulation information, fine regulation information, pressure information, and temperature information of the steady-state mixed gas in the gas inlet pipe.

8. The MPCVD reaction chamber gas introduction device as described in claim 7, characterized in that, It also includes a PLC controller connected to the mass flow meter, the first flow regulating valve, the second flow regulating valve, the pressure sensor, and the temperature sensor, for controlling the operating status of the first flow regulating valve and the second flow regulating valve according to external commands and the current status information of the gas inlet pipeline and the gas information of the steady-state mixed gas.

9. The MPCVD reaction chamber gas introduction device according to any one of claims 1-8, characterized in that, The number of static mixers is at least two, and multiple static mixers are connected in series.

10. The MPCVD reaction chamber gas introduction device as described in claim 9, characterized in that, The static mixer is an SV type static mixer, an SK type static mixer, an SX type static mixer, an SH type static mixer, or an SL type static mixer.

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