Membrane laminated structure and high-capacitance-body-ratio high-voltage multilayer ceramic dielectric capacitor
By employing an alternating stacked structure of two different electrode films in a high-voltage multilayer ceramic capacitor, the area of the electrodes facing each other is increased, solving the problem of insufficient capacitance caused by excessive inner electrode margin, and realizing a capacitor design with a high capacitance-to-volume ratio.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- CHENGDU HONGMING & UESTC NEW MATERIALS
- Filing Date
- 2025-05-29
- Publication Date
- 2026-05-12
AI Technical Summary
Existing high-voltage multilayer ceramic chip capacitors (MLCCs) have a large margin between internal electrodes, resulting in a relatively small electrode-facing area, making it difficult to achieve a high capacitance-to-volume ratio and limiting their use in high-capacitance applications.
Two different electrode films with alternating stacked structures are used. The inner electrode patterns of the first and second electrode films are different. By stacking them alternately, the electrode structure is formed, reducing the margin and increasing the area of the electrodes facing each other.
Without increasing the capacitor volume, the capacitance was increased, solving the problem of reduced electrode facing area caused by excessive margin in traditional staggered stacking, improving the capacitance-to-volume ratio, and improving the utilization rate of internal electrode slurry.
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Figure CN224232520U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of capacitor structure, specifically to a diaphragm stacked structure and a high capacitance-to-volume ratio high voltage multilayer ceramic capacitor. Background Technology
[0002] Currently, high-voltage multilayer ceramic chip capacitors (MLCCs) on the market typically employ an internal capacitor series design, with the electrode films arranged in a staggered stacking pattern. This design relies primarily on screen printing equipment to process the internal electrode films during production. Screen printing technology can print the internal electrode paste into electrode patterns of specific shapes and sizes. The advantages of this process include high alignment accuracy, simple operation, and effective assurance of the printing quality of the internal electrodes, thereby improving product stability and reliability.
[0003] However, this design also has some drawbacks, due to the margin between the end electrode and the inner electrode (e.g. Figure 1 As shown in Figure B, this is the margin between the internal electrodes (e.g., ...). Figure 1 As shown in Figure A, the margin between the inner electrodes is relatively large, resulting in a smaller area of the electrodes facing each other. According to the capacitance calculation formula C = K × M × N / T, where M represents the area of the electrodes facing each other, a decrease in the area of the electrodes directly affects the capacitance. Therefore, this design makes it difficult to achieve high capacitance-to-volume ratios, limiting the use of capacitors in applications requiring high capacitance.
[0004] In view of the above, this application is hereby submitted. Utility Model Content
[0005] The purpose of this invention is to provide a diaphragm stacked structure and a high capacitance-to-volume ratio high voltage multilayer ceramic capacitor. By setting the electrode diaphragms into two different patterns, there is no need for staggered stacking, which solves the problem in the prior art where the electrode facing area is relatively small due to the excessive margin between the inner electrodes.
[0006] The present invention is achieved through the following technical solution: First, a diaphragm stack structure is provided, including a plurality of alternatingly stacked first electrode diaphragms and second electrode diaphragms, wherein the inner electrode pattern in a single first electrode diaphragm differs from the inner electrode pattern in a single second electrode diaphragm.
[0007] Optionally, the inner electrode pattern of the first electrode film includes a plurality of first and second patterns arranged alternately from left to right, and the inner electrode pattern of the second electrode film includes a plurality of second and first patterns arranged alternately from left to right.
[0008] When the first electrode film and the second electrode film are stacked alternately, the projection of the second pattern in the inner electrode pattern of the first electrode film in the vertical direction falls within the range of the first pattern in the inner electrode pattern of the second electrode film.
[0009] Optionally, the first shape is a rectangle and the second shape is a rectangle.
[0010] Optionally, the width of the first graphic is equal to the width of the second graphic.
[0011] Optionally, the length of the first figure is greater than the length of the second figure.
[0012] Optionally, the number of first patterns in the inner electrode pattern of the first electrode film is equal to the number of second patterns in the inner electrode pattern of the second electrode film.
[0013] The number of second patterns in the inner electrode pattern of the first electrode film is equal to the number of first patterns in the inner electrode pattern of the second electrode film.
[0014] Optionally, the projection of the second figure in the horizontal direction falls within the range of the first figure.
[0015] Optionally, the inner electrode pattern of the first electrode film is axially symmetric in both the horizontal and vertical directions, and the inner electrode pattern of the second electrode film is axially symmetric in both the horizontal and vertical directions.
[0016] Secondly, this utility model embodiment also provides a high capacitance-to-voltage multilayer ceramic capacitor, including an electrode structure cut from the above-mentioned diaphragm stack structure. The electrode structure includes multiple alternating stacked first inner electrode layers and second inner electrode layers. The margin between the inner electrodes of a single first inner electrode layer and a single second inner electrode layer is d1, and the margin between the terminal electrode and the inner electrode of the electrode structure is d2. <d2。
[0017] Optionally, the spacing between adjacent first inner electrode layers and second inner electrode layers is d3, where d3 <d1。
[0018] Compared with the prior art, the embodiments of this utility model have the following advantages and beneficial effects:
[0019] 1. The diaphragm stacked structure provided in this embodiment of the invention increases the facing area between the electrodes after stacking by setting the inner electrode patterns of the first electrode film and the second electrode film to be different. This is because electrodes with different patterns can better "complement" each other during stacking, reducing area waste caused by excessive margins. Simultaneously, this structure eliminates the need for staggered stacking, thus avoiding the problem of reduced facing area due to excessive margins in traditional staggered stacking. Because this embodiment of the invention increases the facing area between the inner electrode layers, it can improve capacitance without increasing the capacitor volume.
[0020] 2. In this embodiment of the utility model, the shape of the inner electrode in the first electrode film is arranged in a way that is staggered from the shape of the inner electrode in the second electrode film. When the first electrode film and the second electrode film are stacked alternately, the projection of the second pattern in the inner electrode pattern of the first electrode film in the vertical direction will fall within the range of the first pattern in the inner electrode pattern of the second electrode film. This structure, through the alternating arrangement and stacking of patterns, allows the electrode patterns on different films to better "complement" each other after stacking, thereby reducing the margin between electrodes and increasing the facing area of the electrodes.
[0021] 3. In the capacitor provided by this utility model embodiment, the distance d1 between the inner electrodes in the same inner electrode layer is greater than the distance d3 (dielectric thickness) between adjacent inner electrode layers. Therefore, the dielectric strength will not decrease due to the reduction of the distance d1 between the inner electrodes in the same inner electrode layer.
[0022] 4. The internal electrode structure design of the capacitor provided in this embodiment is achieved by stacking two types of electrode films. There is no need for misalignment between the different films, solving the problem in the prior art where a single electrode film is used for misaligned stacking. This is problematic when the product size is large enough that the misalignment exceeds the 10mm upper limit of commonly used stacking equipment, making it impossible to achieve large-size capacitors. Furthermore, the misalignment method improves the situation where the electrode patterns at the outermost edge of the stacked film are incomplete and need to be discarded, thus increasing the utilization rate of the internal electrode slurry.
[0023] In general, the diaphragm stack structure provided by the embodiments of this utility model reduces the margin between inner electrodes in the same inner electrode layer and increases the facing area of inner electrodes between different inner electrode layers by setting the electrode diaphragms into two different patterns without staggered stacking, thereby improving the capacitance ratio of the capacitor. Attached Figure Description
[0024] To more clearly illustrate the technical solutions of the embodiments of this utility model, the drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this utility model and should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.
[0025] Figure 1 This is a schematic diagram of the internal electrode structure of a capacitor in the prior art;
[0026] Figure 2 This is a schematic diagram of the internal electrode pattern structure of the first electrode film;
[0027] Figure 3 This is a schematic diagram of the internal electrode pattern structure of the second electrode film;
[0028] Figure 4 This is a schematic diagram of the internal electrode structure of the capacitor in an embodiment of this utility model.
[0029] The attached diagram shows the markings and corresponding component names:
[0030] 1-First pattern, 2-Second pattern, 3-First inner electrode layer, 4-Second inner electrode layer, 5-Longitudinal cutting line, 6-Transverse cutting line. Detailed Implementation
[0031] To make the objectives, technical solutions, and advantages of the embodiments of this utility model clearer, the technical solutions of the embodiments of this utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this utility model, not all embodiments. The components of the embodiments of this utility model described and shown in the accompanying drawings can typically be arranged and designed in various different configurations.
[0032] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely to illustrate selected embodiments of the invention. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without inventive effort are within the scope of protection of the present invention.
[0033] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.
[0034] In the description of this utility model, it should be noted that the terms "first", "second", "third", etc. are used only for distinguishing descriptions and should not be construed as indicating or implying relative importance.
[0035] Example
[0036] Example 1: Refer to Figure 2 and Figure 3 This utility model provides a diaphragm stack structure, including multiple alternatingly stacked first electrode diaphragms and second electrode diaphragms. The inner electrode pattern of a single first electrode diaphragm differs from that of a single second electrode diaphragm. Specifically, the first and second electrode diaphragms are stacked alternately, and multiple diaphragms are pressed together using existing stacking processes to form a single capacitor structure. Because the inner electrode patterns of the first and second electrode diaphragms are different, the facing area between the electrodes increases after stacking, as electrodes with different patterns can better "complement" each other during stacking, reducing area waste caused by excessive margins. Compared to existing structures, this structure eliminates the need for staggered stacking, thus avoiding the problem of reduced facing area due to excessive margins in traditional staggered stacking.
[0037] For example, the inner electrode pattern of the first electrode film includes a plurality of first patterns 1 and second patterns 2 arranged alternately from left to right, and the inner electrode pattern of the second electrode film includes a plurality of second patterns 2 and first patterns 1 arranged alternately from left to right; when the first electrode film and the second electrode film are alternately stacked, the projection of the second pattern 2 in the inner electrode pattern of the first electrode film in the vertical direction falls within the range of the first pattern 1 in the inner electrode pattern of the second electrode film.
[0038] Specifically, the electrode pattern within the first electrode film consists of multiple first patterns 1 and second patterns 2, which are arranged alternately from left to right, as exemplarily as shown below. Figure 2As shown, the arrangement order is: First Pattern 1 → Second Pattern 2 → First Pattern 1 → Second Pattern 2, and so on. The inner electrode pattern of the second electrode film also consists of multiple Second Pattern 2 and First Pattern 1, but the arrangement order is reversed compared to the first electrode film, i.e., from left to right: Second Pattern 2 → First Pattern 1 → Second Pattern 2 → First Pattern 1, and so on. The number of First Pattern 1 in the inner electrode pattern of the first electrode film is equal to the number of Second Pattern 2 in the inner electrode pattern of the second electrode film, and the number of Second Pattern 2 in the inner electrode pattern of the first electrode film is equal to the number of First Pattern 1 in the inner electrode pattern of the second electrode film. By ensuring the symmetry of the number of patterns in the first and second electrode films, more precise electrode alignment can be achieved. When the two films are stacked alternately, the vertical projection of the Second Pattern 2 of the first electrode film can accurately fall within the range of the First Pattern 1 of the second electrode film, ensuring the maximization of the facing area between the electrode patterns, thereby improving the capacitance.
[0039] In a preferred embodiment of this utility model, the first shape 1 is rectangular, and the second shape 2 is rectangular. The width of the first shape 1 is equal to the width of the second shape 2, and there is a gap between adjacent first shapes 1 and second shapes 2. The second shape 2 is formed by longitudinally splicing multiple small rectangular units, and there is a gap between adjacent small rectangular units. It should be noted that although the widths of the first shape 1 and the second shape 2 are equal, their lengths can be different. The specific length depends on the design requirements of the capacitor capacity. For example, in this embodiment of the utility model, the length of the first shape 1 is greater than the length of the second shape 2, and the horizontal projection of the second shape 2 falls within the range of the first shape 1.
[0040] Specifically, since the first pattern 1 and the second pattern 2 have equal widths and are arranged symmetrically, more precise electrode alignment can be achieved when the first electrode film and the second electrode film are alternately stacked. The rectangular patterns of equal width fit better after stacking, reducing area waste caused by differences in pattern size, thereby maximizing the area of the electrodes facing each other and ensuring higher capacitance without increasing the capacitor volume. More preferably, the inner electrode pattern of the first electrode film is axially symmetrical in both the horizontal and vertical directions, and the inner electrode pattern of the second electrode film is also axially symmetrical in both the horizontal and vertical directions.
[0041] Example 2: Figure 4As shown in the figure, the embodiment of the present utility model also provides a high volume ratio high voltage multi-layer ceramic capacitor, which includes an electrode structure cut from the film stack structure of Embodiment 1. The electrode structure includes a plurality of first inner electrode layers 3 and second inner electrode layers 4 that are alternately stacked. The margin between the inner electrodes of a single first inner electrode layer 3 and second inner electrode layer 4 is d1, and the margin between the end electrode of the electrode structure and the inner electrode is d2, where d1 < d2. It should be noted that the cutting process adopts existing technologies and is specifically cut according to the size required by the capacitor. Exemplarily, in the embodiment of the present utility model, it can be cut according to each longitudinal cutting line 5 shown in Figure 2 or Figure 3 . The transverse cutting is carried out in sequence from top to bottom according to the transverse cutting lines 6 shown in Figure 2 or Figure 3 at positions one, three, five, etc. (with one position interval), and so on. The inner electrode structure of the capacitor obtained after cutting is as shown in Figure 4 and is a capacitor structure in which 4 capacitors are connected in series and then connected in parallel in multiple layers.
[0042] Specifically, the first inner electrode layers 3 and the second inner electrode layers 4 are alternately stacked to form a multi-layer electrode structure. The margin between the end electrode of the electrode structure and the inner electrode is d2, and d1 < d2. This structure reduces the ineffective margin between the inner electrodes, while ensuring that the margin between the end electrode and the inner electrode is sufficient, improving the process redundancy of the stacking film alignment accuracy deviation, and increasing the volume ratio.
[0043] More preferably, the distance between adjacent first inner electrode layers 3 and second inner electrode layers 4 is d3, where d3 < d1. In the embodiment of the present utility model, by reducing the distance d3 between adjacent inner electrode layers, the distance between the inner electrodes in the same inner electrode layer is greater than the distance (dielectric thickness) between adjacent inner electrode layers. This structure will not result in a reduction in the dielectric strength due to reducing the distance between the inner electrodes in the same layer.
[0044] The above are only the preferred embodiments of the present utility model and are not used to limit the present utility model. For those skilled in the art, the present utility model can have various changes and modifications. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present utility model shall be included within the protection scope of the present utility model. It should be noted that the structures or components illustrated in the drawings are not necessarily drawn to scale, and the present utility model omits the descriptions of well-known components and processing technologies and processes to avoid unnecessarily limiting the present utility model.
Claims
1. A diaphragm stacked structure, characterized in that, It includes multiple alternating stacked first electrode films and second electrode films, wherein the inner electrode pattern in a single first electrode film differs from the inner electrode pattern in a single second electrode film.
2. The diaphragm stacked structure according to claim 1, characterized in that, The inner electrode pattern of the first electrode film includes a plurality of first patterns (1) and second patterns (2) arranged alternately from left to right, and the inner electrode pattern of the second electrode film includes a plurality of second patterns (2) and first patterns (1) arranged alternately from left to right. When the first electrode film and the second electrode film are stacked alternately, the projection of the second pattern (2) in the inner electrode pattern of the first electrode film in the vertical direction falls within the range of the first pattern (1) in the inner electrode pattern of the second electrode film.
3. The diaphragm stacked structure according to claim 2, characterized in that, The first figure (1) is a rectangle, and the second figure (2) is a rectangle.
4. The diaphragm stacked structure according to claim 3, characterized in that, The width of the first graphic (1) is equal to the width of the second graphic (2).
5. The diaphragm stacked structure according to claim 4, characterized in that, The length of the first graphic (1) is greater than the length of the second graphic (2).
6. The diaphragm stacked structure according to claim 5, characterized in that, The number of first patterns (1) in the inner electrode pattern of the first electrode film is equal to the number of second patterns (2) in the inner electrode pattern of the second electrode film; The number of second patterns (2) in the inner electrode pattern of the first electrode film is equal to the number of first patterns (1) in the inner electrode pattern of the second electrode film.
7. A diaphragm stacked structure according to claim 5, characterized in that, The projection of the second figure (2) in the horizontal direction falls within the range of the first figure (1).
8. The diaphragm stacked structure according to claim 5, characterized in that, The inner electrode pattern of the first electrode film is axially symmetric in both the horizontal and vertical directions, and the inner electrode pattern of the second electrode film is axially symmetric in both the horizontal and vertical directions.
9. A high-capacitance-ratio, high-voltage multilayer ceramic capacitor, characterized in that, The electrode structure includes an electrode structure cut from the film stack structure according to any one of claims 1-8, wherein the electrode structure includes a plurality of alternating stacked first inner electrode layers (3) and second inner electrode layers (4), wherein the margin between the inner electrodes of a single first inner electrode layer (3) and second inner electrode layer (4) is d1, and the margin between the end electrode and the inner electrode of the electrode structure is d2, wherein d1 < d2.
10. A high capacitance-to-volume ratio, high-voltage multilayer ceramic capacitor according to claim 9, characterized in that, The distance between adjacent first inner electrode layer (3) and second inner electrode layer (4) is d3, where d3 < d1.