Three-dimensional stacked power module and power supply device

Abstract

The utility model is suitable for the technical field of power devices, and provides a three-dimensional stacked power module and a power module, and the three-dimensional stacked power module comprises a first substrate which is provided with a first power terminal and a first signal terminal; the second substrate is provided with a first power chip, a second power terminal and a second signal terminal, the second substrate is provided with a second substrate upper metal layer and a second substrate lower metal layer, and the second substrate upper metal layer is electrically connected with the second substrate lower metal layer; one end of the first connecting assembly is electrically connected to the first substrate, and the other end of the first connecting assembly is electrically connected to the first power chip; the third substrate is provided with a second power chip and a third power terminal; and one end of the second connecting assembly is electrically connected to the second substrate lower metal layer, and the other end of the second connecting assembly is electrically connected to the second power chip. According to the invention, parasitic inductance in the circuit can be reduced, and power loss is reduced.

Description

Technical Field

[0001] This application belongs to the field of power device technology, and more specifically, relates to a three-dimensional stacked power module and power supply device. Background Technology

[0002] With the increasing awareness of energy crisis and environmental protection, the fields of new energy power generation and new energy vehicles have received considerable attention. Power modules are crucial components responsible for achieving power conversion. To convert energy faster and more efficiently to meet growing user demands, it is necessary to improve the power rating of power modules to output greater power.

[0003] In related technologies, long leads are often used to connect corresponding areas of multiple power modules to improve the overall output power. However, leads have self-inductance properties, and electromagnetic induction is generated when current passes through them. This results in additional high parasitic inductance in the power module circuit, which slows down signal transmission speed, affects the frequency response of the circuit, and generates additional power loss, reducing the power output efficiency of the power module. Utility Model Content

[0004] The purpose of this application is to provide a three-dimensional stacked power module and power supply device to solve the technical problems in the prior art where lead connections affect the frequency response of the circuit and reduce the power output efficiency of the power module.

[0005] To achieve the above objectives, the technical solution adopted in this application is: to provide a three-dimensional stacked power module, comprising:

[0006] A first substrate, the first substrate being provided with a first power terminal and a first signal terminal;

[0007] The second substrate is provided with a first power chip, a second power terminal and a second signal terminal. The second substrate has an upper metal layer and a lower metal layer, and the upper metal layer and the lower metal layer are electrically connected.

[0008] A first connection component, one end of which is electrically connected to a first substrate, and the other end of which is electrically connected to a first power chip;

[0009] The third substrate is provided with a second power chip and a third power terminal;

[0010] The second connection component has one end electrically connected to the lower metal layer of the second substrate and the other end electrically connected to the second power chip.

[0011] The three-dimensional stacked power module provided in this application embodiment allows power input at each power terminal and control signal transmission at each signal terminal. The first power chip and the second power chip are respectively disposed on different substrates, and the upper metal layer of the second substrate and the lower metal layer of the second substrate are electrically connected. This enables the entire three-dimensional stacked power module to form a complete half-bridge module circuit, which helps to realize the power conversion of the three-dimensional stacked power module. The first power chip and the first substrate are directly connected through the first connecting component, and the second power chip and the second substrate are directly connected through the second connecting component. Current can be quickly transmitted between the first power chip and the first substrate through the first connecting component, and between the second power chip and the second substrate through the second connecting component. This reduces the need to use long leads to connect corresponding areas of the stacked power module, helps to reduce parasitic inductance in the circuit, reduces the impact of the three-dimensional stacked power module on signal transmission speed and frequency response, and reduces power loss, which helps to improve the power output efficiency of the three-dimensional stacked power module.

[0012] In some embodiments, the first substrate has a first under-substrate metal layer, the first under-substrate metal layer includes a first gate region and a first source region, the first gate region and the first source region are spaced apart, a first signal terminal is connected to the first gate region, and a first power terminal is connected to the first source region.

[0013] By adopting the above technical solution, by dividing the first gate region and the first source region in the metal layer under the first substrate and setting them apart, signal transmission and power transmission can be effectively isolated, thereby avoiding cross-interference between the two. The first signal terminal is responsible for transmitting control signals to the first gate region, while the first power terminal inputs power to the first source region. The division of labor is clear, which helps to ensure the correct distribution and processing of signals and power, and can improve the overall performance and reliability of the three-dimensional stacked power module.

[0014] In some embodiments, the first power chip has a first gate and a first source, and the first connection component includes a first pad and a first pin. One end of the first pad is electrically connected to the first source region, and the other end of the first pad is electrically connected to the first source. One end of the first pin is electrically connected to the first gate region, and the other end of the first pin is electrically connected to the first gate.

[0015] By adopting the above technical solution, the first pad can realize the power transmission between the first source region and the first source electrode, and the first pin can realize the signal transmission between the first gate region and the first gate, which helps to provide reliable power output and control capabilities for the three-dimensional stacked power module.

[0016] In some embodiments, the second substrate under metal layer includes a second gate region and a second source region, the second gate region and the second source region are spaced apart, a second signal terminal is connected to the second gate region, and a second power terminal is connected to the second source region.

[0017] By adopting the above technical solution, by dividing the second gate region and the second source region in the metal layer under the second substrate and setting them apart, signal transmission and power transmission can be effectively isolated, thereby avoiding cross-interference between the two. The second signal terminal is responsible for transmitting control signals to the second gate region, while the second power terminal inputs power to the second source region. The division of labor is clear, which helps to ensure the correct distribution and processing of signals and power, and can improve the overall performance and reliability of the three-dimensional stacked power module.

[0018] In some embodiments, the second power chip has a second gate and a second source, and the second connection component includes a second pad and a second pin. One end of the second pad is electrically connected to the second source region, and the other end of the second pad is electrically connected to the second source. One end of the second pin is electrically connected to the second gate region, and the other end of the second pin is electrically connected to the second gate.

[0019] By adopting the above technical solution, the second pad can realize the power transfer between the second source region and the second source, and the second pin can realize the signal transmission between the second gate region and the second gate, which helps to provide reliable power output and control capabilities for the three-dimensional stacked power module.

[0020] In some embodiments, the three-dimensional stacked power module further includes a fourth power terminal disposed on the lower metal layer of the second substrate.

[0021] By adopting the above technical solution, the fourth power terminal is connected to the Kelvin source, which can shorten the drive circuit of the second power chip, reduce the influence of transmission resistance and wire resistance in the circuit, and help improve the driving efficiency and accuracy of the second power chip.

[0022] In some embodiments, the first power chip and the second power terminal are disposed on the upper metal layer of the second substrate, the second signal terminal is disposed on the lower metal layer of the second substrate, and the second signal terminal and the fourth power terminal are spaced apart.

[0023] By adopting the above technical solution, by placing the first power chip and the second power terminal on the upper metal layer of the second substrate, and placing the second signal terminal on the upper and lower metal layers of the second substrate, and by reasonably setting the interval between the fourth power terminal and the second signal terminal, it is helpful to achieve efficient power management and control signal transmission, while ensuring the stability, reliability and accuracy of the circuit.

[0024] In some embodiments, the lower metal layer of the first substrate has a first clearance region adapted to the second power terminal, the upper metal layer of the second substrate has a second clearance region adapted to the first power terminal and the first signal terminal, the lower metal layer of the second substrate has a third clearance region adapted to the third power terminal, and the third substrate has a fourth clearance region adapted to the second signal terminal and the fourth power terminal.

[0025] By adopting the above technical solutions, the first clearance area is adapted to the second power terminal, and the second clearance area is adapted to the first power terminal and the first signal terminal. This can prevent direct conductive connection between the lower metal layer of the first substrate and the upper metal layer of the second substrate, and reduce the conductive effect between the lower metal layer of the first substrate and the upper metal layer of the second substrate. The third clearance area is adapted to the third power terminal, and the fourth clearance area is adapted to the second signal terminal and the fourth power terminal. This can prevent direct conductive connection between the lower metal layer of the second substrate and the third substrate, and reduce the conductive effect between the lower metal layer of the second substrate and the third substrate. This helps to improve the overall reliability and safety of the three-dimensional stacked power module.

[0026] In some embodiments, the three-dimensional stacked power module includes a plurality of first power chips and a plurality of second power chips, wherein the plurality of first power chips are oriented in the same direction and the plurality of second power chips are oriented in the same direction.

[0027] By adopting the above technical solution, the division of the corresponding gate region and source region on the substrate is more intuitive and simple. In terms of physical layout, the gate region and source region can be more easily distinguished, and they can be connected to the power terminals through a relatively simple wiring method. This can reduce the complexity and possibility of errors in design and production, and help improve the reliability and stability of the three-dimensional stacked power module.

[0028] This application also provides a power supply device, including a power supply and the aforementioned three-dimensional stacked power module, wherein the positive terminal of the power supply is electrically connected to a third power terminal and the negative terminal of the power supply is electrically connected to a first power terminal.

[0029] The power supply device provided in this application provides power input to a three-dimensional stacked power module. Each power terminal can realize power input, and each signal terminal can realize control signal transmission. The first power chip and the second power chip are respectively disposed on different substrates. The upper metal layer of the second substrate and the lower metal layer of the second substrate are electrically connected, which can make the entire three-dimensional stacked power module form a complete half-bridge module circuit, which helps to realize the power conversion of the three-dimensional stacked power module. The first power chip and the first substrate are directly connected through the first connection component, and the second power chip and the second substrate are directly connected through the second connection component. Current can be quickly transmitted between the first power chip and the first substrate through the first connection component, and between the second power chip and the second substrate through the second connection component. This can reduce the need to use long leads to connect corresponding areas of the stacked power module, which helps to reduce parasitic inductance in the circuit, reduce the impact of the three-dimensional stacked power module on signal transmission speed and frequency response, and reduce power loss, which helps to improve the power output efficiency of the three-dimensional stacked power module.

[0030] The above description is only an overview of the technical solution of this application. In order to better understand the technical means of this application and to implement it in accordance with the contents of the specification, and to make the above and other objects, features and advantages of this application more obvious and understandable, the following are specific embodiments of this application. Attached Figure Description

[0031] To more clearly illustrate the technical solutions in the embodiments of this application, the drawings used in the description of the embodiments or related technologies will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0032] Figure 1 This is an exploded view of a three-dimensional stacked power module provided in an embodiment of this application;

[0033] Figure 2 This is a schematic diagram of the structure of a three-dimensional stacked power module provided in an embodiment of this application;

[0034] Figure 3 This is a schematic diagram of the structure of a three-dimensional stacked power module provided in an embodiment of this application;

[0035] Figure 4 This is a schematic diagram of the structure of the first substrate provided in an embodiment of this application;

[0036] Figure 5 This is a schematic diagram of the layout structure of the metal layer on the first substrate provided in an embodiment of this application;

[0037] Figure 6 This is a schematic diagram of the layout structure of the lower metal layer of the first substrate provided in an embodiment of this application;

[0038] Figure 7 This is a schematic diagram of the structure of a first power chip provided in an embodiment of this application;

[0039] Figure 8 This is a schematic diagram of the structure of the second substrate provided in one embodiment of this application;

[0040] Figure 9 This is a schematic diagram of the layout structure of the metal layer on the second substrate provided in an embodiment of this application;

[0041] Figure 10 This is a schematic diagram of the layout structure of the second substrate under metal layer provided in an embodiment of this application;

[0042] Figure 11 This is a schematic diagram of the structure of the third substrate provided in an embodiment of this application;

[0043] Figure 12 This is a schematic diagram of the layout structure of the metal layer on the third substrate provided in an embodiment of this application;

[0044] Figure 13 This is a schematic diagram of the layout structure of the lower metal layer of the third substrate provided in an embodiment of this application.

[0045] The following are the labeling elements in the figure:

[0046] 100. Three-dimensional stacked power module; 10. First substrate; 11. First power terminal; 12. First signal terminal; 13. Upper metal layer of the first substrate; 14. Ceramic layer of the first substrate; 15. Lower metal layer of the first substrate; 151. First gate region; 152. First source region; 153. First clearance region; 20. Second substrate; 21. First power chip; 211. First gate; 212. First source; 22. Second power terminal; 23. Second signal terminal; 24. Upper metal layer of the second substrate; 241. Third clearance region; 25. Ceramic layer of the second substrate ; 26. Second substrate under metal layer; 261. Second gate region; 262. Second source region; 263. Third clearance region; 27. Fourth power terminal; 30. First connection component; 31. First pad; 32. First ejector pin; 40. Third substrate; 41. Second power chip; 42. Third power terminal; 43. Third substrate upper metal layer; 431. Fourth clearance region; 432. Fifth clearance region; 44. Third substrate ceramic layer; 45. Third substrate under metal layer; 50. Second connection component; 51. Second pad; 52. Second ejector pin; 60. Copper clip. Detailed Implementation

[0047] The embodiments of this utility model are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain this utility model, and should not be construed as limiting this utility model.

[0048] In the description of this utility model, it should be understood that the terms "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model.

[0049] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this utility model, "a plurality of" means two or more, unless otherwise explicitly specified.

[0050] In this utility model, unless otherwise explicitly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model according to the specific circumstances.

[0051] Please see Figures 1 to 3 This application proposes a three-dimensional stacked power module 100, including a first substrate 10, a second substrate 20, a first connecting component 30, a third substrate 40, and a second connecting component 50.

[0052] The first substrate 10 is provided with a first power terminal 11 and a first signal terminal 12.

[0053] The first power terminal 11 is connected to the negative terminal of the power supply.

[0054] The first signal terminal 12 is used for drive signal input.

[0055] The first power terminal 11 and the first signal terminal 12 are electrically connected to the first substrate 10.

[0056] The second substrate 20 is provided with a first power chip 21, a second power terminal 22 and a second signal terminal 23. The second substrate 20 has an upper metal layer 24 and a lower metal layer 26, which are electrically connected.

[0057] The first power chip 21 is used to increase the overall power of the three-dimensional stacked power module 100. The first power chip 21 is electrically connected to the second substrate 20.

[0058] The second power terminal 22 is connected to the load and is used to output electrical energy to the external load. The second power chip 41 is electrically connected to the second substrate 20.

[0059] The second signal terminal 23 is used to transmit drive signals. The second signal terminal 23 is electrically connected to the second substrate 20.

[0060] The upper metal layer 24 and the lower metal layer 26 of the second substrate are two metal layers disposed opposite to each other on the second substrate 20, and the upper metal layer 24 and the lower metal layer 26 are electrically connected.

[0061] For example, such as Figure 1 and Figure 2 As shown, the three-dimensional stacked power module 100 also includes copper clips 60, one end of which is clamped to the upper metal layer 24 of the second substrate, and the other end of which is clamped to the lower metal layer 26 of the second substrate. Optionally, in order to improve the conductivity between the upper metal layer 24 and the lower metal layer 26 of the second substrate, multiple copper clips 60 can be provided.

[0062] One end of the first connection component 30 is electrically connected to the first substrate 10, and the other end of the first connection component 30 is electrically connected to the first power chip 21.

[0063] The first connection component 30 is conductive and does not include leads. The first connection component 30 is used to realize power transmission and signal transmission between the first substrate 10 and the first power chip 21.

[0064] The third substrate 40 is provided with a second power chip 41 and a third power terminal 42.

[0065] The second power chip 41 is used to increase the overall power of the three-dimensional stacked power module 100. The second power chip 41 is electrically connected to the third substrate 40.

[0066] The third power terminal 42 is connected to the positive terminal of the power supply.

[0067] One end of the second connection component 50 is electrically connected to the lower metal layer 26 of the second substrate, and the other end of the second connection component 50 is electrically connected to the second power chip 41.

[0068] The second connection component 50 is conductive and does not include leads. The second connection component 50 is used to realize power transmission and signal transmission between the second substrate under metal layer 26 and the second power chip 41.

[0069] like Figures 1 to 3 As shown, the power from the external power supply is transmitted into the three-dimensional stacked power module 100 through the third power terminal 42, and then to the second power chip 41 on the third substrate 40 to power the second power chip 41. The power is then transmitted to the lower metal layer 26 of the second substrate through the second power chip 41 and the second connection component 50. The drive signal enters the three-dimensional stacked power module 100 through the second signal terminal 23, and is transmitted to the second power chip 41 through the lower metal layer 26 of the second substrate and the second connection component 50, thus completing the power and signal connection of the lower half-bridge circuit in the half-bridge module circuit. The lower metal layer 26 of the second substrate and the upper metal substrate layer are electrically connected. Electrical energy is transferred from the lower metal substrate layer to the upper metal half-layer, and then through the upper metal layer 24 to the first power chip 21 to power the first power chip 21. The second power terminal 22 on the upper metal layer 24 serves as an output terminal, outputting the power conversion signal to the external load. Simultaneously, the first power terminal 11 on the first substrate 10 is connected to the negative terminal of the external power supply. The first substrate 10 is electrically connected to the first power chip 21 through the first connection component 30. The drive signal enters the three-dimensional stacked power module 100 through the first signal terminal 12, completing the power and signal connection of the upper half-bridge circuit in the half-bridge module circuit. The entire three-dimensional stacked power module 100 together forms a half-bridge module circuit to convert the electrical energy of the power supply.

[0070] The three-dimensional stacked power module 100 provided in this application embodiment allows power input at each power terminal and control signal transmission at each signal terminal. The first power chip 21 and the second power chip 41 are respectively disposed on different substrates. The upper metal layer 24 and the lower metal layer 26 of the second substrate are electrically connected, which enables the entire three-dimensional stacked power module 100 to form a complete half-bridge module circuit, which helps to realize the power conversion of the three-dimensional stacked power module 100. The first power chip 21 and the first substrate 10 are directly connected through the first connection component 30, and the second power chip 41 and the second substrate 20 are directly connected through the second connection component 50. Current can be quickly transmitted between the first power chip 21 and the first substrate 10 through the first connection component 30, and between the second power chip 41 and the second substrate 20 through the second connection component 50. This reduces the need to use long leads to connect corresponding areas of the stacked power module, helps to reduce parasitic inductance in the circuit, reduces the impact of the three-dimensional stacked power module 100 on signal transmission speed and frequency response, and reduces power loss, which helps to improve the power output efficiency of the three-dimensional stacked power module 100.

[0071] In some embodiments, the first substrate 10 has a first substrate under metal layer 15, the first substrate under metal layer 15 includes a first gate region 151 and a first source region 152, the first gate region 151 and the first source region 152 are spaced apart, a first signal terminal 12 is connected to the first gate region 151, and a first power terminal 11 is connected to the first source region 152.

[0072] like Figure 1 , Figures 4 to 6 As shown, the first substrate 10 has a first substrate upper metal layer 13, a first substrate ceramic layer 14 and a first substrate lower metal layer 15 disposed opposite to each other, with the first substrate upper metal layer 13 and the first substrate lower metal layer 15 respectively disposed on opposite sides of the first substrate ceramic layer 14.

[0073] The metal layer 13 on the first substrate is a metal layer on the first substrate 10 that is opposite to the second substrate 20. The layout of the metal layer 13 on the first substrate is as follows: Figure 5 As shown.

[0074] The first substrate under metal layer 15 is a metal layer on the first substrate 10 that is close to the second substrate 20. The layout of the first substrate under metal layer 15 is as follows: Figure 6 As shown.

[0075] like Figure 6 As shown, the first substrate under metal layer 15 includes a first gate region 151 and a first source region 152 disposed at intervals.

[0076] like Figure 1 and Figure 3As shown, the first signal terminal 12 is connected to the first gate region 151. The drive signal is input to the three-dimensional stacked power module 100 through the first signal terminal 12 and transmitted to the first gate region 151 through the first gate region 151 and the first connection component 30 to the first power chip 21.

[0077] The first power terminal 11 is connected to the first source region 152 to realize the power transmission between the external power supply and the first substrate 10.

[0078] By adopting the above technical solution, by dividing the first gate region 151 and the first source region 152 in the first substrate under metal layer 15 and setting them apart, signal transmission and power transmission can be effectively isolated, thereby avoiding cross-interference between the two; the first signal terminal 12 is responsible for transmitting control signals to the first gate region 151, while the first power terminal 11 inputs power to the first source region 152. The division of labor is clear, which helps to ensure the correct distribution and processing of signals and power, and can improve the overall performance and reliability of the three-dimensional stacked power module 100.

[0079] like Figure 1 and Figure 7 As shown, in some embodiments, the first power chip 21 has a first gate 211 and a first source 212, and the first connection component 30 includes a first pad 31 and a first pin 32. One end of the first pad 31 is electrically connected to the first source region 152, and the other end of the first pad 31 is electrically connected to the first source 212. One end of the first pin 32 is electrically connected to the first gate region 151, and the other end of the first pin 32 is electrically connected to the first gate 211.

[0080] The first gate 211 is the control gate in the first power chip 21. The current path in the first power chip 21 can be controlled by adjusting the voltage of the first gate 211.

[0081] The first source 212 is the output terminal of the first power chip 21, which is the terminal on the first power chip 21 where current flows in or out.

[0082] The first pad 31 is conductive, and one end of the first pad 31 is electrically connected to the first source region 152, and the other end of the first pad 31 is electrically connected to the first source 212, so as to realize the power transmission between the first substrate 10 and the first power chip 21.

[0083] One end of the first pin 32 is electrically connected to the first gate region 151, and the other end of the first pin 32 is electrically connected to the first gate 211, so as to realize signal transmission between the first substrate 10 and the first power chip 21.

[0084] By adopting the above technical solution, the first pad 31 can realize the power transmission between the first source region and the first source 212, and the first pin 32 can realize the signal transmission between the first gate region 151 and the first gate 211, which helps to provide reliable power output and control capability for the three-dimensional stacked power module 100.

[0085] In some embodiments, such as Figure 8 As shown, the second substrate 20 has a second substrate upper metal layer 24, a second substrate ceramic layer 25, and a second substrate lower metal layer 26 disposed opposite to each other, with the second substrate upper metal layer 24 and the second substrate lower metal layer 26 respectively disposed on opposite sides of the second substrate ceramic layer 25.

[0086] The metal layer 24 on the second substrate is a metal layer on the second substrate 20 that is close to the first substrate 10. The layout of the metal layer 24 on the second substrate is as follows: Figure 9 As shown.

[0087] The second substrate lower metal layer 26 is a metal layer on the second substrate 20 that is opposite to the first substrate 10. The layout of the second substrate lower metal layer 26 is as follows: Figure 10 As shown.

[0088] like Figure 1 and Figure 10 As shown, in some embodiments, the second substrate under metal layer 26 includes a second gate region 261 and a second source region 262, the second gate region 261 and the second source region 262 are spaced apart, the second signal terminal 23 is connected to the second gate region 261, and the second power terminal 22 is connected to the second source region 262.

[0089] like Figure 10 As shown, the second substrate under metal layer 26 includes a second gate region 261 and a second source region 262 disposed at intervals.

[0090] The second signal terminal 23 is connected to the second gate region 261. The drive signal is input to the three-dimensional stacked power module 100 through the second signal terminal 23 and transmitted to the second gate region 261 through the second gate region 261 and the second connection component 50 to the second power chip 41.

[0091] The second power terminal 22 is connected to the second source region 262, thereby transmitting the electrical energy of the second source region 262 to an external load.

[0092] By adopting the above technical solution, by dividing the second gate region 261 and the second source region 262 in the lower metal layer 26 of the second substrate and setting them apart, signal transmission and power transmission can be effectively isolated, thereby avoiding cross-interference between the two. The second signal terminal 23 is responsible for transmitting control signals to the second gate region 261, while the second power terminal 22 inputs power to the second source region 262. The division of labor is clear, which helps to ensure the correct distribution and processing of signals and power, and can improve the overall performance and reliability of the three-dimensional stacked power module 100.

[0093] In some embodiments, the second power chip 41 has a second gate and a second source, and the second connection component 50 includes a second pad 51 and a second pin 52. One end of the second pad 51 is electrically connected to the second source region 262, and the other end of the second pad 51 is electrically connected to the second source. One end of the second pin 52 is electrically connected to the second gate region 261, and the other end of the second pin 52 is electrically connected to the second gate.

[0094] The structure of the second power chip 41 is the same as that of the first power chip 21. For details, please refer to [reference needed]. Figure 7 .

[0095] The second gate is the control gate in the second power chip 41. The current path in the second power chip 41 can be controlled by adjusting the voltage of the second gate.

[0096] The second source is the output terminal of the second power chip 41, which is the terminal on the second power chip 41 where current flows in or out.

[0097] The second pad 51 is conductive, and one end of the second pad 51 is electrically connected to the second source region 262, and the other end of the second pad 51 is electrically connected to the second source, so as to realize the power transfer between the second substrate 20 and the second power chip 41.

[0098] One end of the second pin 52 is electrically connected to the second gate region 261, and the other end of the second pin 52 is electrically connected to the second gate, so as to realize signal transmission between the second substrate 20 and the second power chip 41.

[0099] By adopting the above technical solution, the second pad 51 can realize the power transmission between the second source region and the second source, and the second pin 52 can realize the signal transmission between the second gate region 261 and the second gate, which helps to provide reliable power output and control capability for the three-dimensional stacked power module 100.

[0100] like Figure 1 and Figure 3As shown, in some embodiments, the three-dimensional stacked power module 100 further includes a fourth power terminal 27, which is disposed on the lower metal layer 26 of the second substrate.

[0101] The fourth power terminal 27 is connected to an external Kelvin source. The fourth power terminal 27 and the second signal terminal 23 form the lower half-bridge circuit in the half-bridge module circuit, which can shorten the drive circuit of the second power chip 41.

[0102] By adopting the above technical solution, the fourth power terminal 27 is connected to the Kelvin source, which can shorten the drive circuit of the second power chip 41, reduce the influence of transmission resistance and wire resistance in the circuit, and help improve the drive efficiency and accuracy of the second power chip 41.

[0103] like Figures 1 to 3 As shown, in some embodiments, the first power chip 21 and the second power terminal 22 are disposed on the upper metal layer 24 of the second substrate, the second signal terminal 23 is disposed on the lower metal layer 26 of the second substrate, and the second signal terminal 23 and the fourth power terminal 27 are spaced apart.

[0104] By adopting the above technical solution, by placing the first power chip 21 and the second power terminal 22 on the metal layer 24 of the second substrate, and placing the second signal terminal 23 on the upper and lower metal layers of the second substrate 20, and by reasonably setting the interval between the fourth power terminal 27 and the second signal terminal 23, it is helpful to achieve efficient power management and control signal transmission, while ensuring the stability, reliability and accuracy of the circuit.

[0105] In some embodiments, such as Figure 1 and Figure 6 As shown, the lower metal layer 15 of the first substrate has a first clearance area 153, which is adapted to the second power terminal 22.

[0106] like Figure 1 , Figure 8 and Figure 9 As shown, the metal layer 24 on the second substrate has a second clearance area, which is adapted to the first power terminal 11 and the first signal terminal 12.

[0107] The first power terminal 11 and the first signal terminal 12 are disposed on the lower metal layer 15 of the first substrate, and the position of the second clearance area corresponds to the position of the first power terminal 11 and the first signal terminal 12.

[0108] like Figure 1 and Figure 10 As shown, the lower metal layer 26 of the second substrate has a third clearance area 263241, which is adapted to the third power terminal 42.

[0109] The third power terminal 42 is disposed on the third substrate 40, and the position of the third clearance area 263241 corresponds to the position of the third power terminal 42.

[0110] like Figure 1 , Figure 11 and Figure 12 As shown, the third substrate 40 is provided with a fourth clearance area 431, which is adapted to the second signal terminal 23 and the fourth power terminal 27.

[0111] The second signal terminal 23 and the fourth power terminal 27 are disposed on the lower metal layer 26 of the second substrate, and the position of the fourth clearance area 431 corresponds to the position of the second signal terminal 23 and the fourth power terminal 27.

[0112] like Figures 11 to 13 As shown, the third substrate 40 has an upper metal layer 43, a ceramic layer 44, and a lower metal layer 45 disposed opposite to each other, with the upper metal layer 43 and the lower metal layer 45 respectively disposed on opposite sides of the ceramic layer 44.

[0113] The metal layer 43 on the third substrate is a metal layer on the third substrate 40 that is close to the second substrate 20. The layout of the metal layer 43 on the third substrate is as follows: Figure 12 As shown.

[0114] The third substrate under metal layer 45 is a metal layer on the third substrate 40 that is opposite to the second substrate 20. The layout of the third substrate under metal layer 45 is as follows: Figure 13 As shown.

[0115] The fourth avoidance area 431 is located in the lower metal layer 45 of the third substrate.

[0116] Optionally, the third substrate under metal layer 45 is provided with a fifth clearance area 432, the position of which corresponds to the position of the copper clip 60.

[0117] By adopting the above technical solutions, the first clearance area 153 is adapted to the second power terminal 22, and the second clearance area is adapted to the first power terminal 11 and the first signal terminal 12. This can prevent the direct conductive connection between the lower metal layer 15 of the first substrate and the upper metal layer 24 of the second substrate, and can reduce the conductive effect between the lower metal layer 15 of the first substrate and the upper metal layer 24 of the second substrate. The third clearance area 263241 is adapted to the third power terminal 42, and the fourth clearance area 431 is adapted to the second signal terminal 23 and the fourth power terminal 27. This can prevent the direct conductive connection between the lower metal layer 26 of the second substrate and the third substrate 40, and can reduce the conductive effect between the lower metal layer 26 of the second substrate and the third substrate 40. This helps to improve the overall reliability and safety of the three-dimensional stacked power module 100.

[0118] In some embodiments, the three-dimensional stacked power module 100 includes a plurality of first power chips 21 and a plurality of second power chips 41, wherein the plurality of first power chips 21 are oriented in the same direction and the plurality of second power chips 41 are oriented in the same direction.

[0119] The first power chip 21 includes a first gate 211 and a first source 212. The first gates 211 of the plurality of first power chips 21 face the same direction, and the first sources 212 of the plurality of first power chips 21 face the same direction.

[0120] The second power chip 41 includes a second gate and a second source. The second gates of the plurality of second power chips 41 are oriented in the same direction, and the second sources of the plurality of second power chips 41 are oriented in the same direction.

[0121] By adopting the above technical solution, the division of the corresponding gate region and source region on the substrate is more intuitive and simple. In terms of physical layout, the gate region and source region can be more easily distinguished, and they can be connected to the power terminals through a relatively simple wiring method. This can reduce the complexity and possibility of errors in design and production, and help improve the reliability and stability of the three-dimensional stacked power module 100.

[0122] When assembling the three-dimensional stacked power module 100, a matching coating fixture is first made to metallize the surface of the first power chip 21, the second power chip 41, the first pad 31 and the second pad 51 to provide good solderability. Then, a welding fixture is made to position and assemble all the materials. Since the fixture needs to be disassembled after welding, the disassembly capability needs to be considered when designing the fixture. The fixture is cut into an upper fixture and a lower fixture and installed step by step. Specifically, the lower fixture is placed upside down, and the second power chip 41, chip solder pad, third power terminal 42, terminal solder pad, and third substrate 40 are installed sequentially. Then, the lower fixture is placed upright, and the pad solder pad, second pad 51, second ejector pin 52, ejector pin solder pad, fourth power terminal 27, second signal terminal 23, and terminal solder pad are installed sequentially. The upper fixture is then placed upside down, and the first power chip 21, chip solder pad, second power terminal 22, terminal solder pad, and second substrate 20 are installed sequentially. Next, the upper fixture is placed upright, and the first power terminal 11, first signal terminal 12, terminal solder pad, and first substrate 10 are installed sequentially. The entire module is then soldered or electrically connected by pressure sintering using silver paste instead of solder pads. After soldering or sintering, the upper and lower fixtures are removed. Finally, the module is encapsulated, exposing the two outer metal layers of the upper and lower substrates for heat dissipation, and exposing the terminals for connecting external circuits.

[0123] This application also provides a power supply device, including a power supply and the aforementioned three-dimensional stacked power module 100, wherein the positive terminal of the power supply is electrically connected to a third power terminal 42 and the negative terminal of the power supply is electrically connected to a first power terminal 11.

[0124] The power supply device provided in this embodiment provides power input to the three-dimensional stacked power module 100. Each power terminal can realize power input, and each signal terminal can realize control signal transmission. The first power chip 21 and the second power chip 41 are respectively disposed on different substrates. The upper metal layer 24 and the lower metal layer 26 of the second substrate are electrically connected, which can make the entire three-dimensional stacked power module 100 form a complete half-bridge module circuit, which helps to realize the power conversion of the three-dimensional stacked power module 100. The first power chip 21 and the first substrate 10 are directly connected through the first connection component 30, and the second power chip 41 and the second substrate 20 are directly connected through the second connection component 50. Current can be quickly transmitted between the first power chip 21 and the first substrate 10 through the first connection component 30, and between the second power chip 41 and the second substrate 20 through the second connection component 50. This can reduce the need to use long leads to connect corresponding areas of the stacked power module, which helps to reduce parasitic inductance in the circuit, reduce the impact of the three-dimensional stacked power module 100 on signal transmission speed and frequency response, and reduce power loss, which helps to improve the power output efficiency of the three-dimensional stacked power module 100.

[0125] The above are merely preferred embodiments of the present utility model and are not intended to limit the present utility model. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present utility model should be included within the protection scope of the present utility model.

Claims

1. A three-dimensional stacked power module, characterized in that, include: A first substrate, the first substrate being provided with a first power terminal and a first signal terminal; The second substrate has a first power chip, a second power terminal and a second signal terminal. The second substrate has an upper metal layer and a lower metal layer, and the upper metal layer and the lower metal layer are electrically connected. A first connection component, one end of which is electrically connected to the first substrate, and the other end of which is electrically connected to the first power chip; The third substrate is provided with a second power chip and a third power terminal; The second connection component has one end electrically connected to the lower metal layer of the second substrate and the other end electrically connected to the second power chip.

2. The three-dimensional stacked power module according to claim 1, characterized in that, The first substrate has a first under-substrate metal layer, the first under-substrate metal layer includes a first gate region and a first source region, the first gate region and the first source region are spaced apart, the first signal terminal is connected to the first gate region, and the first power terminal is connected to the first source region.

3. The three-dimensional stacked power module according to claim 2, characterized in that, The first power chip has a first gate and a first source. The first connection component includes a first pad and a first pin. One end of the first pad is electrically connected to the first source region, and the other end of the first pad is electrically connected to the first source. One end of the first pin is electrically connected to the first gate region, and the other end of the first pin is electrically connected to the first gate.

4. The three-dimensional stacked power module according to claim 3, characterized in that, The second substrate under metal layer includes a second gate region and a second source region, the second gate region and the second source region are spaced apart, the second signal terminal is connected to the second gate region, and the second power terminal is connected to the second source region.

5. The three-dimensional stacked power module according to claim 4, characterized in that, The second power chip has a second gate and a second source. The second connection component includes a second pad and a second pin. One end of the second pad is electrically connected to the second source region, and the other end of the second pad is electrically connected to the second source. One end of the second pin is electrically connected to the second gate region, and the other end of the second pin is electrically connected to the second gate.

6. The three-dimensional stacked power module according to claim 4, characterized in that, The three-dimensional stacked power module further includes a fourth power terminal, which is disposed on the lower metal layer of the second substrate.

7. The three-dimensional stacked power module according to claim 6, characterized in that, The first power chip and the second power terminal are disposed on the upper metal layer of the second substrate, and the second signal terminal is disposed on the lower metal layer of the second substrate. The second signal terminal and the fourth power terminal are spaced apart.

8. The three-dimensional stacked power module according to claim 7, characterized in that, The first substrate has a first clearance area in its lower metal layer, which is adapted to the second power terminal. The second substrate has a second clearance area in its upper metal layer, which is adapted to the first power terminal and the first signal terminal. The second substrate has a third clearance area in its lower metal layer, which is adapted to the third power terminal. The third substrate has a fourth clearance area, which is adapted to the second signal terminal and the fourth power terminal.

9. The three-dimensional stacked power module according to claim 4, characterized in that, The three-dimensional stacked power module includes multiple first power chips and multiple second power chips, wherein the multiple first power chips are oriented in the same direction and the multiple second power chips are oriented in the same direction.

10. A power supply device, comprising a power supply, characterized in that, It also includes a three-dimensional stacked power module as described in any one of claims 1-9, wherein the positive terminal of the power supply is electrically connected to the third power terminal, and the negative terminal of the power supply is electrically connected to the first power terminal.

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