Semiconductor device and electrical device

Abstract

The utility model discloses a semiconductor device and electrical equipment, the semiconductor device comprises a substrate, a pin frame and a plastic package body, a first main surface of the substrate is provided with a fan inversion bonding pad part, a compressor inversion bonding pad part, a power bonding pad part and a rectification bonding pad part, and the plastic package body packages at least a part of the substrate and a part of the pin frame; the radiator is arranged on the second main surface side and is in heat conduction connection with at least part of the plastic package body and / or at least part of the substrate, a containing cavity is defined between the radiator and the substrate, and the projection of the containing cavity in the direction perpendicular to the first main surface at least partially coincides with the fan inversion bonding pad part, or at least partially coincides with the compressor inversion bonding pad part, or at least partially coincides with the compressor inversion bonding pad part. At least part of the inverter pad part is overlapped with an area between the fan inverter pad part and the compressor inverter pad part; the temperature detector is located in the containing cavity. The temperature detector does not occupy the space of the first main surface of the substrate, thereby facilitating the reduction of the size of the substrate, and improving the temperature detection accuracy of the temperature detector.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and more specifically to a semiconductor device and electrical equipment. Background Technology

[0002] Electronic control boards for equipment such as air conditioner compressors and washing machine motors can incorporate semiconductor devices such as Intelligent Power Modules (IPMs). IPMs utilize Insulated Gate Bipolar Transistors (IGBTs), power switching devices, which offer advantages such as high current density, low saturation voltage, and high voltage resistance. For example, an air conditioner electronic control board may include separately packaged components such as rectifiers, power factor correction (PFC) units, compressor IPMs, and fan IPMs. These discrete components occupy a large area on the control board, require multiple insertions during production, and pose a risk of device burnout due to the rapid temperature rise of the semiconductor devices during operation. Utility Model Content

[0003] The utility model description section introduces a series of simplified concepts, which will be further explained in detail in the detailed description section. This utility model description section is not intended to limit the key features and essential technical features of the claimed technical solution, nor is it intended to determine the scope of protection of the claimed technical solution.

[0004] To at least partially address the aforementioned problems, according to a first aspect of this application, a semiconductor device is provided, the semiconductor device externally connected to a processor, a heat sink, and a temperature detector, the semiconductor device comprising:

[0005] The substrate has a first main surface and a second main surface opposite to each other. The first main surface has a fan inverter pad portion, a compressor inverter pad portion, a power pad portion and a rectifier pad portion. The fan inverter pad portion and the compressor inverter pad portion are adjacent to each other and spaced apart.

[0006] The system includes a fan inverter circuit, a compressor inverter circuit, a power factor corrector, and a rectifier. The fan inverter circuit, the compressor inverter circuit, the power factor corrector, and the rectifier are respectively disposed on the fan inverter pad section, the compressor inverter pad section, the power pad section, and the rectifier pad section.

[0007] The pin frame includes a drive pin frame, a rectifier pin frame, and a temperature control pin frame. The drive pin frame is provided with a fan drive circuit, a compressor drive circuit, and a power drive circuit. The fan drive circuit is electrically connected between the processor and the fan inverter circuit. The compressor drive circuit is electrically connected between the processor and the compressor inverter circuit. The power drive circuit is electrically connected between the processor and the power factor corrector.

[0008] A molding compound that encapsulates at least a portion of the substrate and a portion of the lead frame, with another portion of the lead frame exposed outside the molding compound;

[0009] The heat sink is disposed on the second main surface side and is thermally connected to at least a portion of the molding compound and / or at least a portion of the substrate. A receiving cavity is enclosed between the heat sink and the substrate. The projection of the receiving cavity in a direction perpendicular to the first main surface at least partially coincides with the fan inverter pad portion, or at least partially coincides with the compressor inverter pad portion, or at least partially coincides with the area between the fan inverter pad portion and the compressor inverter pad portion.

[0010] The temperature detector is located inside the cavity and is used to detect the temperature sampling signal. The temperature detector is electrically connected to the processor through the temperature control pin frame so as to send the temperature sampling signal to the processor via the temperature control pin frame.

[0011] The above technical solution has the following advantages and beneficial effects: By setting a temperature detector for temperature detection on the second main surface of the substrate, the temperature detector does not occupy the space of the first main surface of the substrate, thus providing a larger mounting area for the fan inverter circuit, compressor inverter circuit, power factor corrector, and rectifier. It also helps to reduce the size of the substrate, thereby facilitating the integration and miniaturization of power devices. Furthermore, the power devices (such as IGBTs) in the fan inverter circuit and compressor inverter circuit generate a large amount of heat during high-frequency switching, which is the main heat source of the device. By setting a temperature detector on the second main surface of the substrate, the temperature of the fan inverter circuit, compressor inverter circuit, or both can be effectively monitored, thereby enabling better thermal management of the semiconductor device.

[0012] In some embodiments, the projection of the temperature detector in a direction perpendicular to the first main surface at least partially coincides with the fan inverter circuit, or at least partially coincides with the compressor inverter circuit.

[0013] The above technical solution has the following advantages and benefits: the temperature detector can more accurately monitor the temperature of the fan inverter circuit or the compressor inverter circuit, thereby enabling better thermal management of semiconductor devices.

[0014] In some embodiments, the temperature detector includes a thermistor, which is attached to the second main surface of the substrate, or the thermistor is thermally connected to the second main surface of the substrate through a thermally conductive layer.

[0015] The above technical solution has the following advantages and beneficial effects: By attaching the thermistor in the temperature detector to the second main surface of the substrate, the distance between the thermistor and the second main surface of the substrate can be reduced. When the temperature of the substrate changes, the temperature change can be reflected more quickly on the thermistor, thus making the thermistor more sensitive to the temperature of the substrate, thereby improving the sensitivity and real-time performance of the temperature detector. When the thermistor is thermally connected to the second main surface of the substrate through a thermally conductive layer, the thermally conductive layer can fill the interface gap, maximizing the actual contact area between the thermistor and the substrate, thus ensuring the accuracy of temperature detection.

[0016] In some embodiments, a recessed groove is provided on the second main surface of the substrate, and at least a portion of the thermal element is located in the recessed groove.

[0017] The above technical solution has the following advantages and beneficial effects: by setting a recessed groove on one side of the second main surface of the substrate, the thermistor is located at least in the recessed groove, which can make the distance between the thermistor and the heat source closer. When the temperature at the corresponding position on the substrate changes, the temperature change can be reflected more quickly in the part of the thermistor located in the recessed groove. The setting of the recessed groove can improve the sensitivity and real-time performance of the temperature detector.

[0018] In some embodiments, at least a portion of the second main surface of the substrate is exposed outside the molding compound;

[0019] The heat sink includes a heat-conducting plate and a heat dissipation part. The heat-conducting plate has a first side and a second side that are positioned opposite each other. The heat dissipation part is disposed on the first side of the heat-conducting plate. The second side of the heat-conducting plate is joined to the portion of the second main surface exposed outside the plastic encapsulation body.

[0020] The heat-conducting plate has a receiving groove on its second side surface to serve as at least a portion of the space of the receiving cavity.

[0021] The above technical solution has the following advantages and beneficial effects: It provides a new heat dissipation structure, in which a receiving groove is provided on the second side of the heat-conducting plate facing the second main surface of the substrate, serving as at least a partial space of the receiving cavity. Thus, when the second side of the heat-conducting plate is attached to the portion of the second main surface of the substrate exposed outside the encapsulation body, a receiving cavity can be formed between the substrate and the heat-conducting plate, providing assembly space for the temperature detector and improving the heat conduction rate between the heat sink and the substrate. Furthermore, the heat dissipation portion on the first side of the heat-conducting plate can increase the contact area between the heat sink and the air, thereby improving the heat dissipation efficiency of the heat sink.

[0022] In some embodiments, a heat insulation layer is provided on the wall of the receiving tank, and the temperature detector and the heat sink are separated by the heat insulation layer.

[0023] The above technical solution has the following advantages and beneficial effects: By setting a heat insulation layer on the arm of the receiving tank, the temperature detector and the heat sink are separated by the heat insulation layer, thereby separating the heat dissipation function of the heat sink from the function of the temperature detector in detecting the temperature of the semiconductor device, so that they do not interfere with each other. That is, the heat sink will not lower the temperature of the substrate at the set position detected by the temperature detector, so that the temperature of the semiconductor device detected by the temperature detector will not be lowered due to its placement on the side of the heat sink, thus realizing that the temperature measurement function and the heat dissipation function do not interfere with each other.

[0024] In some embodiments, the substrate has mutually perpendicular lateral and longitudinal directions, and the fan inverter pad, the compressor inverter pad, the power pad, and the rectifier pad are sequentially spaced along the lateral direction of the substrate on the first main surface of the substrate.

[0025] The above technical solution has the following advantages and benefits: it helps to reduce the size of the substrate, thereby facilitating the integration and miniaturization of power devices.

[0026] In some embodiments, the heat sink is provided with a through hole communicating with the receiving cavity, and the temperature control pin frame is electrically connected to the temperature detector through a lead passing through the through hole.

[0027] The above technical solution has the following advantages and beneficial effects: By providing a through hole in the heat sink to connect the receiving cavity, and threading an electrically insulated lead through the through hole, the temperature control pin frame and the temperature detector are electrically connected, thereby achieving electrical connection between the two. At this time, the temperature control pin frame can still be packaged on both sides of the substrate in the longitudinal direction without requiring additional adjustments to the position of the temperature control pin frame, thus improving compatibility with existing processes.

[0028] In some embodiments, the substrate is provided with a temperature detection pad portion on the second main surface, and the temperature detector is electrically connected to the temperature detection pad portion;

[0029] The heat sink is provided with a through hole that connects to the receiving cavity, and the temperature control pin frame is electrically connected to the temperature detection pad part through a lead wire passing through the through hole.

[0030] The above technical solution has the following advantages and beneficial effects: by electrically bonding the temperature detector to the temperature detection pad and electrically connecting the temperature control pin frame and the temperature detection pad through the lead wire passing through the wire hole, the temperature detection pad can provide a sufficiently large lead bonding area, which facilitates the formation of a reliable electrical connection between the lead wire and the temperature detection pad, thereby forming a reliable electrical connection between the temperature control pin frame and the temperature detection pad.

[0031] In some embodiments, a temperature sensing pad is provided on the second main surface of the substrate, and a transfer pad is provided on the first main surface of the substrate. At least a portion of the transfer pad is positioned opposite to and spaced apart from the temperature sensing pad. The substrate includes an insulating layer located between the transfer pad and the temperature sensing pad. The temperature detector is electrically bonded to the temperature sensing pad. A contact plug is provided through the insulating layer, and both ends of the contact plug are electrically bonded to the transfer pad and the temperature sensing pad, respectively.

[0032] A portion of the temperature control pin frame extends onto the adapter pad portion to electrically connect the adapter pad portion;

[0033] Alternatively, the substrate has mutually perpendicular lateral and longitudinal directions, the temperature control pin frame and the adapter pad are spaced apart in the longitudinal direction of the substrate, and the temperature control pin frame and the adapter pad are electrically connected by leads.

[0034] The above technical solution has the following advantages and beneficial effects: By providing at least a portion of a transition pad on the first main surface of the substrate, which is positioned opposite to the temperature detection pad, and electrically connecting the transition pad and the temperature detection pad through a contact plug in the insulating layer, the temperature detection pad is led out to one side of the first main surface of the substrate. Electrical connection between the transition pad and the temperature control pin frame is achieved, facilitating the transmission of the temperature sampling signal from the temperature detector to the processor. In this case, there is no need to additionally provide through-holes on the heat sink, thus not only improving the heat dissipation capacity of the heat sink (providing through-holes reduces the area of ​​the heat sink in contact with external air, thereby reducing its heat dissipation capacity), but also allowing both the transition pad and the temperature control pin frame to be at least partially encapsulated in a plastic package, thereby improving the reliability of the electrical connection between the temperature control pin frame and the temperature detector. In some embodiments, the temperature control pin frame is directly electrically connected to the adapter pad, eliminating the need for a lead-based connection. This increases the load capacity between the two components and improves the reliability of their electrical connection. In other embodiments, the temperature control pin frame and adapter pad are spaced apart along the longitudinal direction of the substrate, reducing the substrate area and facilitating the integration and miniaturization of the semiconductor device. In this case, the temperature control pin frame can be electrically connected to the adapter pad via leads, allowing the temperature detector to transmit temperature sampling signals to an external processor.

[0035] In some embodiments, in a direction perpendicular to the first main surface, the projection of the temperature detector onto the substrate is located within the circumferential edge of the substrate and close to the temperature control pin frame.

[0036] The above technical solution has the following advantages and beneficial effects: by placing the temperature detector close to the side of the temperature control pin frame, the distance between the temperature control lead frame and the temperature detector can be reduced, which facilitates a reliable, stable and low-resistance electrical connection between the two.

[0037] This application also provides an electrical device that includes the aforementioned semiconductor device.

[0038] The above technical solution has the following advantages and beneficial effects: Since the electrical device includes the aforementioned semiconductor device, it has the same advantages as the aforementioned semiconductor device. Attached Figure Description

[0039] The following drawings, which are incorporated herein by reference and are used to understand this application, illustrate embodiments of the invention and their descriptions, thereby explaining the apparatus and principles of the invention.

[0040] Figure 1 A top view schematic diagram of a semiconductor device according to an embodiment of this application is shown.

[0041] Figure 2 This is a top view schematic diagram showing the connection between a semiconductor device and a processor in an embodiment of this application.

[0042] Figure 3 A cross-sectional schematic diagram of a semiconductor device according to an embodiment of this application is shown, wherein the temperature control pin frame is only used to show its connection relationship and does not indicate its actual position.

[0043] Figure 4 A cross-sectional schematic diagram of another semiconductor device in an embodiment of this application is shown, wherein the temperature control pin frame is only used to show its connection relationship and does not indicate its actual position.

[0044] Figure 5 A cross-sectional schematic diagram of another semiconductor device in an embodiment of this application is shown, wherein the temperature control pin frame is only used to show its connection relationship and does not indicate its actual position.

[0045] Figure 6 A cross-sectional schematic diagram of another semiconductor device according to an embodiment of this application is shown.

[0046] Figure 7 A cross-sectional schematic diagram of another semiconductor device according to an embodiment of this application is shown.

[0047] Figure 8 A cross-sectional schematic diagram of another semiconductor device according to an embodiment of this application is shown.

[0048] Figure 9 A cross-sectional schematic diagram of another semiconductor device in an embodiment of this application is shown, wherein the temperature control pin frame is only used to show its connection relationship and does not indicate its actual position.

[0049] Figure 10 A cross-sectional schematic diagram of another semiconductor device in an embodiment of this application is shown, wherein the temperature control pin frame is only used to show its connection relationship and does not indicate its actual position.

[0050] Figure label:

[0051] 10. Semiconductor device; 20. Processor;

[0052] 101. Fan inverter circuit; 102. Fan drive circuit; 201. Compressor inverter circuit; 202. Compressor drive circuit; 301. Power factor corrector; 302. Power drive circuit; 401. Rectifier;

[0053] 500, Substrate; 501, First Main Surface; 5011, Fan Inverter Pad Section; 5012, Compressor Inverter Pad Section; 5013, Power Pad Section; 5014, Rectifier Pad Section; 502, Second Main Surface; 503, Thermal Conductive Layer; 504, Sink; 505, Adapter Pad Section; 506, Contact Plug; 507, Insulating Layer; 508, Receiving Cavity; 509, Temperature Detection Pad Section;

[0054] 600, Pin frame; 601, First pin mounting side; 602, Second pin mounting side; 603, Drive pin frame; 604, Fan drive frame; 605, Compressor drive frame; 606, Power drive frame; 607, Temperature control pin frame; 608, Rectifier pin frame;

[0055] 700, plastic sealant;

[0056] 800, radiator; 801, heat-conducting plate; 802, heat dissipation section; 803, first side surface; 804, second side surface; 805, receiving groove; 806, heat insulation layer; 807, wire hole;

[0057] 901. Temperature detector; 902. Thermistor. Detailed Implementation

[0058] The following description provides numerous specific details to offer a more thorough understanding of this application. However, it will be apparent to those skilled in the art that this application can be practiced without one or more of these details. In other instances, certain technical features well-known in the art have not been described to avoid confusion with this application.

[0059] It should be understood that this application can be implemented in various forms and should not be construed as limited to the embodiments set forth herein. Rather, providing these embodiments will make the disclosure thorough and complete, and will fully convey the scope of this application to those skilled in the art. In the drawings, for clarity, the dimensions and relative dimensions of layers and regions may be exaggerated. The same reference numerals denote the same elements throughout.

[0060] It should be understood that although the terms first, second, third, etc., may be used to describe various elements, components, areas, layers, and / or parts, these elements, components, areas, layers, and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, area, layer, or part from another element, component, area, layer, or part. Therefore, without departing from the teachings of this application, the first element, component, area, layer, or part discussed below may be referred to as the second element, component, area, layer, or part.

[0061] Spatial relation terms such as "below," "under," "below," "under," "above," and "above" are used here for convenience to describe the relationship between one element or feature shown in the figure and other elements or features. It should be understood that, in addition to the orientation shown in the figure, spatial relation terms are intended to also include different orientations of devices in use and operation.

[0062] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the scope of this application. When used herein, the singular forms “a,” “an,” and “ / the” are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms “compose” and / or “comprising,” when used in this specification, identify the presence of features, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups. When used herein, the term “and / or” includes any and all combinations of the associated listed items.

[0063] Embodiments of the utility model are described herein with reference to cross-sectional views that serve as schematic diagrams of preferred embodiments (and intermediate structures) of this application. Thus, variations in the shown shape can be anticipated due to, for example, manufacturing techniques and / or tolerances. Therefore, embodiments of this application should not be limited to the specific shapes shown herein, but include shape deviations due to, for example, manufacturing processes. Consequently, the figures are substantially schematic, and their shapes are not intended to show the actual shape of the device and are not intended to limit the scope of this application.

[0064] To fully understand this utility model, detailed steps and structures will be presented in the following description to illustrate the technical solution proposed in this application. Preferred embodiments of this application are described in detail below; however, in addition to these detailed descriptions, this application may have other embodiments.

[0065] A smart power module is a power drive product that combines power resistors and integrated circuit technology. It integrates power switching devices and high-voltage drive circuits, and also incorporates fault detection circuitry. The smart power module receives control signals from the control unit to drive subsequent circuits, and simultaneously feeds back system status detection signals to the control unit.

[0066] IPM is widely used in air conditioners. Current variable frequency air conditioners include a fan, compressor and power factor corrector. Variable frequency air conditioners in related technologies are usually driven by three IPM components to drive their fan, compressor and power factor corrector. Moreover, each functional circuit is set on the same control board, which results in disadvantages such as a large control board area, poor assembly flexibility, high production cost and low assembly efficiency, which restricts the miniaturization process of air conditioners.

[0067] Below, we will refer to the appendix. Figures 1 to 8 A semiconductor device 10 according to an embodiment of this application will be described, wherein, for clearer dimension labeling, Figures 1 to 10 The reference numerals for several structures have been omitted, and they can all be obtained by referring to other figures. It is also worth mentioning that, without conflict, the various technical features in the embodiments of this application can be combined with each other.

[0068] To address the technical problems mentioned in the background section, this application provides a semiconductor device 10. This semiconductor device 10 can be a highly integrated smart power module that integrates discrete components such as inverters (or inverter circuits), PFC, and rectifier 401 into a single, independently packaged power device.

[0069] The following is in conjunction with the appendix Figures 1 to 10 The semiconductor device 10 proposed in the embodiments of this application will be described. To ensure clarity of view, some structural reference numerals may be omitted in some of the drawings; these can be obtained by referring to other drawings. Without conflict, the various technical features in the embodiments of this application can be combined with each other.

[0070] like Figure 1 and Figure 2 As shown, in this embodiment, the semiconductor device 10 can integrate a fan inverter circuit 101, a compressor inverter circuit 201, a power factor corrector (PFC) 301, and a rectifier 401. It should be noted that... Figure 1 The diagram is only used to illustrate the relative positional distribution of the fan inverter circuit 101, compressor inverter circuit 201, power factor corrector 301 (PFC), and rectifier 401, and is not intended to limit the structural dimensions of each integrated object or the components contained therein.

[0071] Semiconductor device 10 can be used in equipment such as air conditioners, taking air conditioners as an example.

[0072] The rectifier 401 in an air conditioner converts alternating current (AC) to direct current (DC). It is typically used in the power supply section to provide DC voltage to subsequent circuits such as the power factor correction (PFC) unit 301 and the inverter circuit. It includes diodes and other auxiliary components. The input of the rectifier 401 is connected to the AC power supply, and its output is connected to the input of the PFC unit 301. For example, a rectifier 401 can be composed of multiple rectifier diodes, such as four spaced-apart rectifier diodes. The rectifier bridge formed by these four diodes converts the input AC power to DC power at the output.

[0073] The power factor corrector 301 is used to improve the power factor by bringing the current and voltage phases closer together and reducing ineffective power. It includes power switching devices, such as insulated-gate bipolar transistors (IGBTs), for controlling the current waveform, and diodes for rectification. It receives the DC voltage output from the rectifier 401 and, by controlling the current waveform, makes the input current and voltage in phase, thereby improving the power factor and reducing ineffective power and harmonic interference. The DC voltage output by the PFC is typically boosted to a higher stable value (e.g., 400V DC) to supply power to the subsequent inverter section. The input terminal of the power factor corrector 301 is connected to the output terminal of the rectifier 401, and the output terminal of the power factor corrector 301 is connected to the DC bus of the fan inverter circuit 101 and the compressor inverter circuit 201. For example, the power factor corrector 301 includes a PFC power switch chip and a PFC diode. The PFC power switch and PFC diode are components of the PFC circuit, which adjusts the power factor of the DC power supply and outputs the adjusted DC power. The PFC power switch chip can be composed of an insulated gate bipolar transistor (IGBT) and a freewheeling diode (FRD), or it can be a metal-oxide-semiconductor field-effect transistor (MOS), or it can be an RC-IGBT (a reverse-conducting IGBT that integrates the IGBT and freewheeling diode onto a single chip).

[0074] The fan inverter circuit 101 is typically used to drive the indoor and outdoor fan motors of an air conditioner. The fan inverter circuit 101 includes multiple power switching devices, such as IGBT modules or metal-oxide-semiconductor field-effect transistors (MOSFETs). The input terminal of the fan inverter circuit 101 is connected to the DC bus (shared with the output terminal of the PFC and the compressor inverter circuit 201). The output terminal of the fan inverter circuit 101 is connected to the fan motor. The fan inverter circuit 101 converts DC power into variable frequency AC power to drive the indoor and outdoor fan motors of the air conditioner, thereby controlling the fan speed.

[0075] The compressor inverter circuit 201 drives the air conditioner compressor and has a relatively high power rating. It includes power switching devices, such as IGBT modules, which integrate multiple IGBTs and freewheeling diodes, or IGBT modules that include multiple RC-IGBTs. The compressor inverter circuit 201 is connected in parallel with the fan inverter circuit 101 and also draws power from the DC bus. The input terminal of the compressor inverter circuit 201 is connected to the DC bus, and the output terminal is connected to the compressor motor. The compressor inverter circuit 201 converts DC power into AC power of a variable frequency to drive the air conditioner's compressor motor. By controlling the power switching devices (such as IGBT modules) in the inverter section, the frequency and voltage of the output AC power are adjusted, thereby controlling the compressor speed and cooling / heating capacity. For example, the fan inverter circuit 101 and the compressor inverter circuit 301 can be composed of multiple inverter power chips; for example, a three-phase inverter bridge circuit can be composed of six inverter power chips. The three-phase inverter bridge circuit includes three-phase upper arm inverter power chips and three-phase lower arm inverter power chips. The inverter power chip can be composed of an insulated gate bipolar transistor (IGBT) and a freewheeling diode (FRD), or it can be a metal-oxide-semiconductor field-effect transistor (MOS), or it can be an RC-IGBT (a reverse-conducting IGBT that integrates the IGBT and the freewheeling diode into a single chip).

[0076] Furthermore, it should be noted that the following embodiments are based on the integration of four parts: the fan inverter circuit 101, the compressor inverter circuit 201, the PFC, and the rectifier 401. In reality, at least two of the four parts can be integrated. For example, at least the power factor corrector 301 and the rectifier 401 can be integrated, while the fan inverter circuit 101 and the compressor inverter circuit 201 still use discrete components. This is also a feasible solution. Compared to a design where all four parts use discrete components, this solution still reduces the area occupied on the control board and the number of component insertions is also relatively reduced.

[0077] For example, such as Figure 1-3 As shown, three-dimensional space is represented using a Cartesian coordinate system. The horizontal direction can be the X-axis, or it can be described as the horizontal or length direction. The vertical direction can be the Y-axis, or it can be described as the vertical or width direction.

[0078] In this embodiment, the semiconductor device 10 is externally connected to a processor 20, a heat sink 800, and a temperature detector 901. The semiconductor device 10 includes a substrate 500, a fan inverter circuit 101, a compressor inverter circuit 201, a power factor corrector 301, a rectifier 401, a lead frame 600, and a plastic package 700.

[0079] The substrate 500 has a first main surface 501 and a second main surface 502 facing each other. The first main surface 501 has a fan inverter pad portion 5011, a compressor inverter pad portion 5012, a power pad portion 5013, and a rectifier pad portion 5014. Among them, the fan inverter pad portion 5011 and the compressor inverter pad portion 5012 are arranged adjacent to each other and spaced apart. The fan inverter circuit 101, the compressor inverter circuit 201, the power factor corrector 301, and the rectifier 401 are respectively disposed on the fan inverter pad portion, the compressor inverter pad portion, the power pad portion, and the rectifier pad portion.

[0080] The substrate 500 supports the power switching device and has good thermal conductivity, which improves the heat dissipation of the power switching device and enhances its reliability. The pads on the first main surface 501 of the substrate 500 allow the power switching device to be led out for electrical connection with other components. Direct electrical connection of the power switching device is achieved by directly placing it on the pads, optimizing the wiring of the semiconductor device 10 and simplifying its structure.

[0081] For example, in this embodiment, the number of substrates 500 can be one, and the fan inverter pads 5011, compressor inverter pads 5012, power pads 5013, and rectifier pads 5014 can be located on the same substrate 500 (that is, the fan inverter circuit 101, compressor inverter circuit 201, power factor corrector 301, and rectifier 401 are disposed on one substrate 500). In some embodiments, the number of substrates 500 can be multiple, and the fan inverter pads 5011, compressor inverter pads 5012, power pads 5013, and rectifier pads 5014 can each be located on one substrate 500 (that is, the fan inverter circuit 101, compressor inverter circuit 201, power factor corrector 301, and rectifier 401 are disposed on different substrates 500). In some embodiments, at least two of the fan inverter pad portion 5011, compressor inverter pad portion 5012, power pad portion 5013, and rectifier pad portion 5014 are disposed on one substrate 500, and the others are disposed on one or more other substrates 500. For example, the fan inverter pad portion 5011 and the compressor inverter pad portion 5012 may be disposed on one substrate 500 (that is, the fan inverter circuit 101 and the compressor inverter circuit 201 are disposed on the same substrate 500), and the power pad portion 5013 and the rectifier pad portion 5014 are disposed on another or two other substrates 500.

[0082] In this embodiment, the substrate 500 has mutually perpendicular horizontal and vertical axes. Based on the "AC-DC-inverter" energy flow path and considering factors such as reducing noise interference, the fan inverter pad 5011, compressor inverter pad 5012, power pad 5013, and rectifier pad 5014 are sequentially spaced along the horizontal axis of the first main surface 501 of the substrate 500. That is, the fan inverter circuit 101, compressor inverter circuit 201, power factor corrector 301, and rectifier 401 are arranged sequentially along the horizontal axis. This design structure is more compact and can better realize the function of the semiconductor device 10. In other embodiments, the fan inverter pad 5011 and compressor inverter pad 5012 are sequentially spaced along the horizontal axis of the first main surface 502 of the substrate 500, and the positions of the power pad 5013 and rectifier pad 5014 can be flexibly adjusted as needed.

[0083] The pin frame 600 includes a drive pin frame 603, a rectifier pin frame 608, and a temperature control pin frame 607. The drive pin frame 603 houses a fan drive circuit 102, a compressor drive circuit 202, and a power drive circuit 302. The fan drive circuit 102 is electrically connected between the processor 20 and the fan inverter circuit 101. The compressor drive circuit 202 is electrically connected between the processor 20 and the compressor inverter circuit 201. The power drive circuit 302 is electrically connected between the processor 20 and the power factor corrector 301. The drive pin frame 603, rectifier pin frame 608, and temperature control pin frame 607 may each include pads and multiple pins connecting to the pads. The fan drive circuit 102, compressor drive circuit 202, and power drive circuit 302 are all located on the pads. For example, refer to... Figure 1 The drive pin frame 603 may include a fan drive frame 604, a compressor drive frame 605, and a power drive frame 606, all electrically connected to the processor 20. The fan drive circuit 102 is disposed on the fan drive frame 604, the compressor drive circuit 202 is disposed on the compressor drive frame 605, and the power drive circuit 302 is disposed on the power drive frame 606. Exemplarily, the pin frame 600 may be disposed on the outer side of the substrate 500 and spaced vertically from at least a portion of the substrate 500. In some embodiments, the pin frame 600 and the substrate 500 may be integral; this application does not specifically limit this.

[0084] The molding compound 700 is used to encapsulate various integrated objects, such as the substrate 500 and the lead frame 600. In this embodiment, the molding compound 700 encapsulates at least a portion of the substrate 500 and a portion of the lead frame 600, with another portion of the lead frame 600 exposed outside the molding compound 700. Exemplarily, the molding compound 700 may encapsulate at least a portion of the substrate 500 (including the fan inverter pad portion 5011, the compressor inverter pad portion 5012, the power pad portion 5013, and the rectifier pad portion 5014), a portion of the lead frame 600 (including pads in the drive lead frame 603, pads in the rectifier lead frame 608, and pads in the temperature control lead frame 607), the fan inverter circuit 101, the compressor inverter circuit 201, the power factor corrector 301, the rectifier 401, the fan drive circuit 102, the compressor drive circuit 202, and the power drive circuit 302. The molded enclosure 700 is obtained through mold encapsulation, which can be formed, for example, using a thermosetting resin via transfer molding. The molded enclosure 700 can be epoxy resin or other resin materials suitable for semiconductor module encapsulation. The molded enclosure 700 provides physical and electrical protection to the structure encapsulated within it, preventing damage from external environmental shocks and ensuring the normal operation of the semiconductor device 10. After encapsulation, multiple pins are exposed from the molded enclosure 700.

[0085] In some embodiments of the present invention, the substrate 500 may include pads and an insulating heat dissipation layer disposed below the pads. The insulating heat dissipation layer is mainly formed by sequentially stacking an insulating resin sheet and a copper layer, or the insulating heat dissipation layer is mainly formed by sequentially stacking an insulating resin sheet and an aluminum layer. The main material of the pads is copper or aluminum. In this case, most of the substrate 500 is wrapped by the encapsulation body 700, and the outer surface of the copper layer or the outer surface of the aluminum layer in the insulating heat dissipation layer of the substrate 500 is exposed from the outer surface of the encapsulation body 500.

[0086] Alternatively, the substrate 500 may include pads, an insulating layer and a heat dissipation layer formed by sequentially stacking, wherein the main material of the pads is a copper layer or an aluminum layer, the main material of the insulating layer is a ceramic insulating layer of AlN, or Al2O3, or Si3N4 or a combination of several materials, and the main material of the heat dissipation layer is a copper layer or an aluminum layer. In this case, most of the substrate 500 is wrapped by the molding compound 700, and the outer surface of the heat dissipation layer of the substrate 500 is exposed from the outer surface of the package 1.

[0087] Alternatively, the substrate 500 may include pads and an insulating layer disposed below the pads, wherein the main material of the insulating layer is an AlN ceramic insulating layer, or an Al2O3 ceramic insulating layer, or a Si3N4 ceramic insulating layer. In this case, most of the substrate 500 is encapsulated by the molding compound 700, and the outer surface of the insulating layer of the substrate 500 is exposed from the outer surface of the molding compound 700.

[0088] Alternatively, the substrate 500 may be formed solely of solder pads. In this case, the substrate 500 is disposed within the molding compound 700, which completely encapsulates the substrate 500. The specific structural form of the substrate 500 can be adjusted according to the specific requirements and application environment of the intelligent power module 100.

[0089] A heat sink 800 is disposed on the second main surface 502 side and is thermally connected to at least a portion of the molding compound 700 and / or at least a portion of the substrate 500. A receiving cavity 508 is enclosed between the heat sink 800 and the substrate 500. The projection of the receiving cavity 508 in a direction perpendicular to the first main surface 501 may at least partially coincide with the fan inverter pad portion 5011, or at least partially coincide with the compressor inverter pad portion 5012, or at least partially coincide with the area between the fan inverter pad portion 5011 and the compressor inverter pad portion 5012. A temperature detector 901 is located within the receiving cavity 508 and is used to detect the obtained temperature sampling signal. The temperature detector 901 is electrically connected to the processor 20 via a temperature control pin frame 607 to send the temperature sampling signal to the processor 20 via the temperature control pin frame 607.

[0090] For example, the temperature detector 901 can be a semiconductor temperature sensor element, such as a diode-based temperature sensor. Semiconductor temperature sensor elements, as temperature detection elements, have advantages such as high integration, ease of use, high measurement accuracy, and a wide temperature measurement range. In some embodiments, the temperature detection element 70 can also be a thermistor-based temperature sensor. A thermistor is a resistor with a large resistance change relative to temperature changes, and the voltage between its terminals changes by changing the resistance value according to the ambient temperature. The ambient temperature of the thermistor is detected based on the voltage between its terminals. The characteristics of the thermistor are not limited; it can be a negative temperature coefficient (NTC) thermistor, a positive temperature coefficient (PTC) thermistor, or a thermistor with other characteristics. Thermistors, especially negative temperature coefficient thermistors, have high sensitivity as temperature detection elements because their resistance changes significantly with temperature. Thermistors are typically made of metal oxide ceramics.

[0091] For example, see Appendix Figure 3 In this embodiment, the projection of the receiving cavity 508 in the direction perpendicular to the first main surface 501 at least partially coincides with the fan inverter pad portion 5011. Preferably, the projection of the receiving cavity 508 in the direction perpendicular to the first main surface 501 completely coincides with the fan inverter pad portion 5011. At this time, the temperature detector 901 can effectively detect the temperature of the fan inverter circuit 101.

[0092] For example, see Appendix Figure 4 In another embodiment of this application, the projection of the receiving cavity 508 in the direction perpendicular to the first main surface 501 at least partially coincides with the compressor inverter pad portion 5012. Preferably, the projection of the receiving cavity 508 in the direction perpendicular to the first main surface 501 completely coincides with the compressor inverter pad portion 5012. In this case, the temperature detector 901 can effectively detect the temperature of the compressor inverter circuit 201.

[0093] For example, see Appendix Figure 5 In another embodiment of this application, the projection of the receiving cavity 508 in a direction perpendicular to the first main surface 501 at least partially coincides with the area between the fan inverter pad portion 5011 and the compressor inverter pad portion 5012. In this case, the temperature detector 901 can effectively detect the combined temperature of the fan inverter circuit 101 and the compressor inverter circuit 201.

[0094] According to the semiconductor device of this application embodiment, by providing a temperature detector 901 for detecting the temperature of the semiconductor device 10 on the second main surface 502 side of the substrate 500, the temperature detector 901 does not occupy the space of the basic first main surface 501, thus providing a larger mounting area for the fan inverter circuit 101, compressor inverter circuit 201, power factor corrector 301, and rectifier 401. This also helps to reduce the size of the substrate 500, thereby facilitating the integration and miniaturization of power devices. Furthermore, the power devices (such as IGBTs) in the fan inverter circuit 101 and compressor inverter circuit 201 generate a large amount of heat during high-frequency switching, which is the main heat source of the device. By providing the temperature detector 901 on the second main surface 502 side of the substrate 500, the temperature of the fan inverter circuit 101, compressor inverter circuit 201, or the combined temperature of both can be effectively monitored, thereby enabling better thermal management of the semiconductor device 10.

[0095] In some embodiments, a portion of the molding compound 700 encapsulates the substrate 500 and the lead frame 600, at least a portion of the second main surface 502 of the substrate 500, another portion of the lead frame 600, and the temperature sensor 901 are exposed outside the molding compound 700. In this case, a heat sink 800 is disposed on the portion of the second main surface 502 exposed outside the molding compound 700 and is thermally connected to the substrate 500. By directly attaching the heat sink 800 to the portion of the second main surface 502 exposed outside the molding compound 700, the thermal conductivity between the heat sink 800 and the substrate 500 can be improved, thereby enhancing heat dissipation efficiency.

[0096] In some embodiments, the molding compound 700 can completely encapsulate the substrate 500, meaning that both the first main surface 501 and the second main surface 502 of the substrate 500 are located within the molding compound 700, and the substrate 500 is completely surrounded by the molding compound 700. In this case, a heat sink 800 is disposed on the molding compound 700. An opening can be formed in the molding compound 700 on the side of the second main surface 502 of the substrate 500 to expose a portion of the second main surface 502 of the substrate 500. A temperature detector 901 can be located in the opening for thermally conductive connection with the substrate 500, thereby improving the accuracy of temperature detection.

[0097] For example, in some embodiments, the projection of the temperature detector 901 in a direction perpendicular to the first main surface 501 at least partially coincides with the fan inverter circuit 101, or at least partially coincides with the compressor inverter circuit 201.

[0098] With this setup, the temperature detector 901 can more accurately monitor the temperature of the fan inverter circuit 101 or the compressor inverter circuit 201, thereby enabling better thermal management of the semiconductor device 10.

[0099] For example, see Appendix Figure 6 In some embodiments, the temperature detector 901 includes a thermistor 902, which is attached to the second main surface 502 of the substrate 500. The thermistor 902 is a key component for the temperature detector 901 to achieve temperature measurement. It can convert temperature, a non-electrical quantity, into electrical quantities such as resistance, voltage, or current, facilitating measurement, amplification, and processing by subsequent circuitry. For example, the thermistor 902 can be a thermistor, such as a positive temperature coefficient (PTC) thermistor or a negative temperature coefficient (NTC) thermistor.

[0100] By attaching the thermistor 902 in the temperature detector 901 to the second main surface 502 of the substrate 500, the distance between the thermistor 902 and the second main surface 502 of the substrate 500 can be reduced. When the temperature of the substrate 500 changes, the temperature change can be reflected more quickly on the thermistor 902, thereby making the thermistor 902 more sensitive to the temperature of the substrate 500, thus improving the sensitivity and real-time performance of the temperature detector 901.

[0101] For example, see Appendix Figure 7 In some embodiments, the temperature detector 901 includes a thermistor 902, which is thermally connected to the second main surface 502 of the substrate 500 via a thermally conductive layer 503.

[0102] The material of the thermally conductive layer 503 can be any type of thermally conductive material. For example, the material of the thermally conductive layer 503 can be one or more of the following: graphene, thermally conductive adhesive, thermally conductive silicone sheet, thermally conductive film, thermally conductive silicone cloth, thermally conductive insulating material, and thermally conductive interface material.

[0103] For example, the material of the thermally conductive layer 503 can be an insulating material, so as to electrically insulate the second main surface 502 of the substrate 500 and the thermistor 902.

[0104] By thermally connecting the thermistor 902 in the temperature detector 901 to the second main surface 502 of the substrate 500 via the thermally conductive layer 503, the thermal conductivity and rate of the thermally conductive layer 503 are higher than those of air. This improves the heat transfer rate between the thermistor 902 and the second main surface 502 of the substrate 500. When the temperature of the substrate 500 changes, the temperature change is reflected more quickly in the thermistor 902, thus making the thermistor 902 more sensitive in reflecting the temperature of the substrate 500. This enhances the sensitivity and real-time performance of the temperature detector 901 in detecting the temperature of the semiconductor device 10. Furthermore, when the thermistor 902 is thermally connected to the second main surface 502 of the substrate 500 via the thermally conductive layer 503, the thermally conductive layer 503 can fill the interface gaps, maximizing the actual contact area between the thermistor 902 and the substrate 500, thereby ensuring the accuracy of temperature detection.

[0105] For example, see Appendix Figure 8 In some embodiments, a recessed groove 504 is provided on the second main surface 502 of the substrate 500, and at least a portion of the thermistor 902 is located in the recessed groove 504. The recessed groove 504 is a groove formed on the second main surface 502 of the substrate 500, which constitutes at least a portion of the space of the receiving cavity 508. That is, the projection of the recessed groove 504 in the direction perpendicular to the first main surface 501 may at least partially coincide with the fan inverter pad portion 5011, or at least partially coincide with the compressor inverter pad portion 5012, or at least partially coincide with the area between the fan inverter pad portion 5011 and the compressor inverter pad portion 5012.

[0106] By providing a recessed groove 504 on one side of the second main surface 502 of the substrate 500, at least a portion of the thermistor 902 is located within the recessed groove 504. This allows the thermistor 902 to be closer to the area between the fan inverter pad portion 5011, the compressor inverter pad portion 5012, or both on the first main surface 501 of the substrate 500. When the temperature at the corresponding location on the substrate 500 changes, the temperature change can be reflected more quickly in the portion of the thermistor 902 located in the recessed groove 504. The recessed groove 504 can improve the sensitivity and real-time performance of the temperature detector 901 in detecting the temperature of the semiconductor device 10.

[0107] For example, see Figures 3 to 7 At least a portion of the second main surface 502 of the substrate 500 is exposed outside the molding compound 700. The heat sink 800 includes a heat-conducting plate 801 and a heat-dissipating portion 802. The heat-conducting plate 801 has a first side surface 803 and a second side surface 804 positioned opposite each other. The heat-dissipating portion 802 is disposed on the first side surface 803 of the heat-conducting plate 801. The second side surface 804 of the heat-conducting plate 801 is joined to the portion of the second main surface 502 exposed outside the molding compound 700. A receiving groove 805 is provided on the second side surface 804 of the heat-conducting plate 801 to serve as at least a portion of the space of the receiving cavity 508.

[0108] This design provides a novel heat dissipation structure. A receiving groove 805 is provided on the second side 804 of the heat-conducting plate 801 facing the second main surface 502 of the substrate 500, serving as at least a portion of the space for a receiving cavity 508. Thus, when the second side 804 of the heat-conducting plate 801 is attached to the second main surface 502 of the substrate 500, a receiving cavity 508 can be formed between the substrate 500 and the heat-conducting plate 801, providing assembly space for the temperature detector 901 and improving the heat conduction rate between the heat sink 800 and the substrate 500. Furthermore, the heat dissipation portion 802 on the first side 803 of the heat-conducting plate 801 increases the contact area between the heat sink 800 and the air, thereby improving the heat dissipation efficiency of the heat sink 800. The heat dissipation portion 802 can be arranged in various ways. In some embodiments, the heat dissipation portion 802 may include structures such as, but not limited to, heat dissipation fins, a cooling fan, liquid cooling pipes, or a direct cooling plate.

[0109] For example, see Appendix Figure 8 In some embodiments, a recessed groove 504 is provided on the second main surface 502 of the substrate 500, and at least a portion of the thermistor 902 is located in the recessed groove 504. At least a portion of the second main surface 502 of the substrate 500 is exposed outside the molding compound 700. The heat sink 800 includes a heat-conducting plate 801 and a heat dissipation portion 802. The heat-conducting plate 801 has a first side surface 803 and a second side surface 804 positioned opposite each other. The heat dissipation portion 802 is disposed on the first side surface 803 of the heat-conducting plate 801, and the second side surface 804 of the heat-conducting plate 801 is joined to the portion of the second main surface 502 exposed outside the molding compound 700. A receiving groove 805 is provided on the second side surface 804 of the heat-conducting plate 801 at a position corresponding to the recessed groove 504. The recessed groove 504 and the receiving groove 805 together constitute a receiving cavity 508.

[0110] For example, see Appendix Figure 6 , 7 In some embodiments, a heat insulation layer 806 is provided on the wall of the receiving tank 805, and the temperature detector 901 and the heat sink 800 are separated by the heat insulation layer 806.

[0111] The materials used for the insulation layer 806 can be various. For example, the materials for the insulation layer 806 can include, but are not limited to, organic insulation materials and inorganic insulation materials. The organic insulation materials can be, but are not limited to, polyurethane insulation materials, extruded polystyrene, graphite polystyrene, etc., while the inorganic insulation materials can be, but are not limited to, rock wool, glass wool, aerogel felt, etc.

[0112] By providing a heat insulation layer 806 on the arm of the receiving groove 805, the temperature detector 901 and the heat sink 800 are separated by the heat insulation layer 806. This allows the heat dissipation function of the heat sink 800 to be separated from the function of the temperature detector 901 in detecting the temperature of the semiconductor device 10, so that they do not interfere with each other. That is, the heat sink 800 will not lower the temperature at the set position of the substrate 500 detected by the temperature detector 901, so that the temperature of the semiconductor device 10 detected by the temperature detector 901 will not be lowered due to its location on the side of the heat sink 800, thus realizing that the temperature measurement function and the heat dissipation function do not interfere with each other.

[0113] For example, see Appendix Figure 3-6 In some embodiments, the heat sink 800 is provided with a wire hole 807 that communicates with the receiving cavity 508, and the temperature control pin frame 607 is electrically connected to the temperature detector 901 through a lead wire passing through the wire hole 807.

[0114] A through-hole 807, which connects to the receiving cavity 508, is provided through the heat sink 800. A lead wire, electrically insulated from the heat sink 800, is threaded through the through-hole 807 to electrically connect the temperature control pin frame 607 and the temperature detector 901, thus achieving electrical connection between the two. In this case, the temperature control pin frame 607 can be packaged on both sides of the substrate 500 in the longitudinal direction without requiring additional adjustments to its position, thereby improving compatibility with existing processes.

[0115] In some embodiments, see Figure 1 By arranging the temperature control pin frame 607 and the substrate 500 at a distance in the longitudinal direction, the temperature control pin frame 607 can avoid occupying the area of ​​the substrate 500, which is beneficial to reducing the size of the substrate 500, thereby facilitating the integration and miniaturization of the semiconductor device 10.

[0116] For example, the extension direction of the wire hole 807 on the heat sink 800 can be perpendicular to the second main surface 502. For instance, the wire hole 807 can be disposed in the heat-conducting plate 801 of the heat sink 800, and the wire hole 807 can pass through the first side surface 803 and the second side surface 804 of the heat-conducting plate 801. The extension line of the wire hole 807 can be located between different heat dissipation fins in the heat dissipation part 802, so that the heat dissipation part 802 does not interfere with the lead wires leading out of the wire hole 807.

[0117] For example, see Appendix Figure 9 In some embodiments, a temperature sensing pad 509 is provided on the second main surface 502 of the substrate 500, and a temperature detector 901 is electrically connected to the temperature sensing pad 509. A wire through hole 807 is provided in the heat sink 800, communicating with the receiving cavity 508, and a temperature control pin frame 607 is electrically connected to the temperature sensing pad 509 via a lead passing through the wire through hole 807.

[0118] By electrically bonding the temperature detector 901 to the temperature detection pad portion 509 and electrically connecting the temperature control pin frame 607 and the temperature detection pad portion 509 through the lead wires passing through the wire hole 807, the temperature detection pad portion 509 can provide a sufficiently large lead bonding area, which facilitates the formation of a reliable electrical connection between the lead wire and the temperature detection pad portion 509, thereby forming a reliable electrical connection between the temperature control pin frame 607 and the temperature detection pad portion 509.

[0119] For example, see Appendix Figure 10 In some embodiments, a temperature detection pad 509 is provided on the second main surface 502 of the substrate 500, and a transfer pad 505 is provided on the first main surface 501 of the substrate 500. At least a portion of the transfer pad 505 is positioned opposite to and spaced apart from the temperature detection pad 509. The substrate 500 includes an insulating layer 507 located between the transfer pad 505 and the temperature detection pad 509. A temperature detector 901 is electrically bonded to the temperature detection pad 509. A contact plug 506 is provided through the insulating layer 507, and both ends of the contact plug 506 are electrically bonded to the transfer pad 505 and the temperature detection pad 509, respectively.

[0120] By providing at least a portion of a transition pad 505 on the first main surface 501 of the substrate 500 that is opposite to the temperature detection pad 509, and electrically connecting the transition pad 505 and the temperature detection pad 509 through a contact plug 506 in the insulating layer 507, the temperature detection pad 509 is brought out to one side of the first main surface 501 of the substrate 500, and the transition pad 505 is electrically connected to the temperature control pin frame 607, thereby facilitating the output of the temperature sampling signal of the temperature detector 901 to the processor 20. At this time, there is no need to provide additional wiring holes 807 on the heat sink 800, which not only improves the heat dissipation capacity of the heat sink 800 (providing wiring holes 807 would reduce the area of ​​the heat sink 800 in contact with the outside air, thus reducing the heat dissipation capacity of the heat sink 800), but also allows the adapter pad portion 505 and the temperature control pin frame 607 to be at least partially encapsulated in the plastic package 700, thereby improving the reliability of the electrical connection between the temperature control pin frame 607 and the temperature detector 901.

[0121] There are several ways to electrically connect the adapter pad 505 to the temperature control pin frame 607. Some of these methods are illustrated below.

[0122] For example, in some embodiments, a portion of the temperature control pin frame 607 extends onto the adapter pad portion 505 to electrically connect to the adapter pad portion 505. By directly connecting the temperature control pin frame 607 to the adapter pad portion 505, eliminating the need for a wired electrical connection between them, not only is the load capacity between the temperature control pin frame 607 and the adapter pad portion 505 increased, but the reliability of their electrical connection is also improved.

[0123] For example, in some embodiments, the substrate 500 has mutually perpendicular horizontal and vertical directions. The temperature control pin frame 607 and the adapter pad portion 505 are arranged longitudinally spaced on the substrate 500, and the temperature control pin frame 607 and the adapter pad portion 505 are electrically connected via leads. By arranging the temperature control pin frame 607 and the adapter pad portion 505 longitudinally spaced on the substrate 500, the temperature control pin frame 607 does not occupy the area of ​​the substrate 500, which is beneficial for reducing the size of the substrate 500, thereby facilitating the integration and miniaturization of the semiconductor device 10. In this case, the temperature control pin frame 607 and the adapter pad portion 505 can be electrically connected via leads, thereby enabling the temperature detector 901 to transmit the temperature sampling signal to the external processor 20 through the temperature control pin frame 607.

[0124] For example, in some embodiments, the projection of the temperature detector 901 onto the substrate 500 is located within the circumferential edge of the substrate 500 and close to the temperature control pin frame 607 in a direction perpendicular to the first main surface 501.

[0125] By placing the temperature detector 901 close to the side of the temperature control lead frame 607, the distance between the temperature control lead frame 607 and the temperature detector 901 can be reduced, facilitating a reliable, stable, and low-resistance electrical connection between the two.

[0126] There are several types of temperature detectors 901 that can be used. Some examples are described below.

[0127] In some embodiments, the temperature detection pad portion 509 includes a grounding pad disposed on the second main surface 502 of the substrate 500, and the temperature detector 901 has a grounding terminal, which is connected to and electrically connected to the grounding pad.

[0128] For example, the temperature detector 901 may also have a sampling end, which may be located on the side of the temperature detector 901 away from the grounding pad. The sampling end may be electrically connected to the sampling pin on the temperature control pin frame 607 via a lead. For example, the temperature detector 901 may be positioned close to the second pin mounting side 602, where a sampling pin may be provided.

[0129] The above technical solution has the following advantages and beneficial effects: By directly setting the temperature detector 901 on the grounding pad and connecting the grounding terminal on the temperature detector 901 to the grounding pad, the grounding pad can be directly used as the setting pad for the temperature detector 901. The two can share the same grounding pin, eliminating the need to set a corresponding pad for the temperature detector 901, reducing the number of pads on the substrate 500, and also reducing the number of grounding pins, which is beneficial for integration and miniaturization. Furthermore, since the grounding pad is adjacent to and spaced apart from the power factor corrector 301, the temperature of the power factor corrector 301 can be accurately detected, thereby improving the over-temperature protection accuracy.

[0130] In other embodiments, the temperature detector 901 may include a thermistor, that is, the thermistor 902 described above is a thermistor, and the thermistor has a first terminal and a second terminal. The temperature detection pad portion 509 includes a ground pad disposed on the second main surface 502 of the substrate 500, and sampling pads arranged at intervals from the ground pad. The first terminal is engaged and electrically connected to the sampling pad, and the second terminal is engaged and electrically connected to the ground pad.

[0131] The above technical solution has the following advantages and beneficial effects: By connecting and electrically linking the second terminal of the thermistor in the temperature detector 901 to the grounding pad, the second terminal of the thermistor and the grounding pad share the same grounding path, eliminating the need for an additional grounding path for the second terminal of the thermistor, reducing the number of pads and grounding pins on the substrate 500, which is beneficial for integration and miniaturization; similarly, by utilizing the positional advantage of the grounding pad being adjacent to and spaced apart from the power factor corrector 301, the thermistor can accurately detect the temperature of the power factor corrector 301, thereby improving the over-temperature protection accuracy; and furthermore, by filtering and optimizing the layout of the thermistor's access points (first terminal and second terminal), a common ground interference rejection design is achieved.

[0132] This concludes the description of the semiconductor device 10 in the embodiments of this application. However, it is conceivable that other suitable elements may exist in addition to the above structure, which are not specifically limited here.

[0133] In another aspect of this application, an electrical device is also provided, which includes the aforementioned semiconductor device. This electrical device can include household appliances such as electric fans, air conditioners, kitchen range hoods, high-speed hair dryers, washing machines, etc. The semiconductor device can be used in the motor drive system of the household appliance, which can be a motor drive system in a fan or compressor. The electrical device can also be a new energy vehicle, industrial automation equipment, switching power supply, etc.

[0134] Semiconductor devices can be used in equipment such as air conditioners, taking air conditioners as an example.

[0135] In air conditioning, a rectifier converts alternating current (AC) to direct current (DC). It is typically used in the power supply section to provide DC voltage to subsequent circuits such as power factor correction (PFC) and inverter circuits. A rectifier includes diodes and other auxiliary components. Its input is connected to the AC power supply, and its output is connected to the input of the PFC. For example, a rectifier consists of multiple rectifier diodes, such as four spaced-apart rectifier diodes. The four diodes form a rectifier bridge that converts the input AC to DC at the output.

[0136] A power factor corrector (PFC) is used to improve the power factor by bringing the current and voltage closer together in phase, reducing inefficient power. It includes power switching devices, such as insulated-gate bipolar transistors (IGBTs), to control the current waveform, and diodes for rectification. It receives the DC voltage output from the rectifier and, by controlling the current waveform, makes the input current and voltage in phase, thereby improving the power factor and reducing inefficient power and harmonic interference. The DC voltage output by the PFC is typically boosted to a higher stable value (e.g., 400V DC) to supply the subsequent inverter circuit. The input of the PFC is connected to the output of the rectifier, and the output is connected to the DC bus of the fan inverter circuit and the compressor inverter circuit. For example, a PFC includes a PFC power switch chip and a PFC diode. The PFC power switch and PFC diode are components of the PFC circuit, which adjusts the power factor of the DC current and outputs the adjusted DC current. The PFC power switch chip can be composed of an insulated gate bipolar transistor (IGBT) and a freewheeling diode (FRD), or it can be a metal-oxide-semiconductor field-effect transistor (MOS), or it can be an RC-IGBT (a reverse-conducting IGBT that integrates the IGBT and the freewheeling diode into a single chip).

[0137] Fan inverter circuits are typically used to drive the indoor and outdoor fan motors of air conditioners. These circuits include multiple power switching devices, such as IGBT modules or metal-oxide-semiconductor field-effect transistors (MOSFETs). The input of the fan inverter circuit is connected to the DC bus (shared with the output of the PFC and the compressor inverter circuit). The output of the fan inverter circuit is connected to the fan motor. The fan inverter circuit converts DC power into variable-frequency AC power to drive the indoor and outdoor fan motors of the air conditioner, thereby controlling the fan speed.

[0138] The compressor inverter circuit drives the air conditioner compressor and has a relatively high power rating. It includes power switching devices, such as IGBT modules, which integrate multiple IGBTs and freewheeling diodes, or IGBT modules comprising multiple RC-IGBTs. The compressor inverter circuit is connected in parallel with the fan inverter circuit, both drawing power from the DC bus. The input of the compressor inverter circuit is connected to the DC bus, and the output is connected to the compressor motor. The compressor inverter circuit converts DC power into AC power of a variable frequency to drive the air conditioner's compressor motor. By controlling the power switching devices (such as IGBT modules) in the inverter circuit, the frequency and voltage of the output AC power are adjusted, thereby controlling the compressor's speed and cooling / heating capacity. For example, the fan inverter circuit and the compressor inverter circuit can be composed of multiple inverter power chips; for instance, a three-phase inverter bridge circuit can be composed of six inverter power chips. The three-phase inverter bridge circuit includes three upper-arm inverter power chips and three lower-arm inverter power chips. The inverter power chip can be composed of an insulated gate bipolar transistor (IGBT) and a freewheeling diode (FRD), or it can be a metal-oxide-semiconductor field-effect transistor (MOS), or it can be an RC-IGBT (a reverse-conducting IGBT that integrates the IGBT and the freewheeling diode into a single chip).

[0139] Since the electrical device of this application has the aforementioned semiconductor device, it also has the advantages of the aforementioned semiconductor device.

[0140] Although exemplary embodiments have been described herein with reference to the accompanying drawings, it should be understood that the above exemplary embodiments are merely illustrative and are not intended to limit the scope of this application. Various changes and modifications can be made therein by those skilled in the art without departing from the scope and spirit of this application. All such changes and modifications are intended to be included within the scope of this application as claimed in the appended claims.

[0141] Numerous specific details are set forth in the specification provided herein. However, it will be understood that embodiments of this application may be practiced without these specific details. In some instances, well-known methods, structures, and techniques have not been shown in detail so as not to obscure the understanding of this specification.

[0142] Similarly, it should be understood that, in order to streamline this application and aid in understanding one or more of the various inventive aspects, features of this application may sometimes be grouped together in a single embodiment, figure, or description thereof in the description of exemplary embodiments of this application. However, this approach should not be construed as reflecting an intention that the claimed application requires more features than are expressly recited in each claim. Rather, as reflected in the corresponding claims, its inventive point lies in solving the corresponding technical problem with features fewer than all features of a single disclosed embodiment. Therefore, the claims following the detailed description are hereby expressly incorporated into that detailed description, wherein each claim itself is a separate embodiment of this application.

[0143] Those skilled in the art will understand that, apart from the mutual exclusion of features, all features disclosed in this specification (including the accompanying claims, abstract, and drawings) and all processes or elements of any method or apparatus so disclosed can be combined in any combination. Unless otherwise expressly stated, each feature disclosed in this specification (including the accompanying claims, abstract, and drawings) may be replaced by an alternative feature serving the same, equivalent, or similar purpose.

[0144] Furthermore, those skilled in the art will understand that although some embodiments herein include certain features included in other embodiments but not others, combinations of features from different embodiments are intended to be within the scope of this application and form different embodiments. For example, in the claims, any of the claimed embodiments can be used in any combination.

[0145] It should be noted that the above embodiments are illustrative of this application and not restrictive of this application, and that those skilled in the art can devise alternative embodiments without departing from the scope of the appended claims.

Claims

1. A semiconductor device, the semiconductor device being externally connected to a processor, a heat sink, and a temperature detector, the semiconductor device comprising: The substrate has a first main surface and a second main surface opposite to each other. The first main surface has a fan inverter pad portion, a compressor inverter pad portion, a power pad portion and a rectifier pad portion. The fan inverter pad portion and the compressor inverter pad portion are adjacent to each other and spaced apart. The fan inverter circuit, the compressor inverter circuit, the power factor corrector, and the rectifier are respectively disposed on the fan inverter pad, the compressor inverter pad, the power pad, and the rectifier pad. The pin frame includes a drive pin frame, a rectifier pin frame, and a temperature control pin frame. The drive pin frame is provided with a fan drive circuit, a compressor drive circuit, and a power drive circuit. The fan drive circuit is electrically connected between the processor and the fan inverter circuit. The compressor drive circuit is electrically connected between the processor and the compressor inverter circuit. The power drive circuit is electrically connected between the processor and the power factor corrector. A molding compound that encapsulates at least a portion of the substrate and a portion of the lead frame, with another portion of the lead frame exposed outside the molding compound; The heat sink is disposed on the second main surface side and is thermally connected to at least a portion of the molding compound and / or at least a portion of the substrate. A receiving cavity is enclosed between the heat sink and the substrate. The projection of the receiving cavity in a direction perpendicular to the first main surface at least partially coincides with the fan inverter pad portion, or at least partially coincides with the compressor inverter pad portion, or at least partially coincides with the area between the fan inverter pad portion and the compressor inverter pad portion. The temperature detector is located inside the cavity and is used to detect the temperature sampling signal. The temperature detector is electrically connected to the processor through the temperature control pin frame so as to send the temperature sampling signal to the processor via the temperature control pin frame.

2. The semiconductor device as claimed in claim 1, characterized in that, The projection of the temperature detector in the direction perpendicular to the first main surface at least partially coincides with the fan inverter circuit, or at least partially coincides with the compressor inverter circuit.

3. The semiconductor device as claimed in claim 1, characterized in that, The temperature detector includes a thermistor, which is attached to the second main surface of the substrate, or the thermistor is thermally connected to the second main surface of the substrate through a thermally conductive layer.

4. The semiconductor device as claimed in claim 3, characterized in that, A recessed groove is provided on the second main surface of the substrate, and at least a portion of the thermistor is located in the recessed groove.

5. The semiconductor device as claimed in claim 1, characterized in that, At least a portion of the second main surface of the substrate is exposed outside the molding compound; The heat sink includes a heat-conducting plate and a heat dissipation part. The heat-conducting plate has a first side and a second side that are positioned opposite each other. The heat dissipation part is disposed on the first side of the heat-conducting plate. The second side of the heat-conducting plate is joined to the portion of the second main surface exposed outside the plastic encapsulation body. The heat-conducting plate has a receiving groove on its second side surface to serve as at least a portion of the space of the receiving cavity.

6. The semiconductor device as claimed in claim 5, characterized in that, The wall of the receiving tank is provided with a heat insulation layer, and the temperature detector and the heat sink are separated by the heat insulation layer.

7. The semiconductor device as claimed in claim 1, characterized in that, The substrate has mutually perpendicular horizontal and vertical directions, and the fan inverter pad, the compressor inverter pad, the power pad and the rectifier pad are arranged sequentially at intervals along the horizontal direction of the substrate on the first main surface of the substrate.

8. The semiconductor device as claimed in claim 1, characterized in that, The heat sink is provided with a through hole that connects to the receiving cavity, and the temperature control pin frame is electrically connected to the temperature detector through a lead wire passing through the through hole.

9. The semiconductor device as claimed in claim 1, characterized in that, The substrate has a temperature detection pad portion on the second main surface, and the temperature detector is electrically connected to the temperature detection pad portion. The heat sink is provided with a through hole that connects to the receiving cavity, and the temperature control pin frame is electrically connected to the temperature detection pad part through a lead wire passing through the through hole.

10. The semiconductor device as claimed in claim 1, characterized in that, A temperature detection pad is provided on the second main surface of the substrate, and a transfer pad is provided on the first main surface of the substrate. At least a portion of the transfer pad is positioned opposite to and spaced apart from the temperature detection pad. The substrate includes an insulating layer located between the transfer pad and the temperature detection pad. The temperature detector is electrically bonded to the temperature detection pad. A contact plug is provided through the insulating layer, and both ends of the contact plug are electrically bonded to the transfer pad and the temperature detection pad, respectively. A portion of the temperature control pin frame extends onto the adapter pad portion to electrically connect the adapter pad portion; Alternatively, the substrate has mutually perpendicular lateral and longitudinal directions, the temperature control pin frame and the adapter pad are spaced apart in the longitudinal direction of the substrate, and the temperature control pin frame and the adapter pad are electrically connected by leads.

11. The semiconductor device as claimed in claim 1, characterized in that, In a direction perpendicular to the first main surface, the projection of the temperature detector on the substrate is located within the circumferential edge of the substrate and close to the temperature control pin frame.

12. An electrical appliance, characterized in that, The semiconductor device includes any one of claims 1-10.

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