Non-contact device for measuring warping degree of SiC wafer

Abstract

The utility model relates to the technical field of SiC wafer warpage measurement, and discloses a non-contact device for SiC wafer warpage measurement, which comprises a detection table main body, a multi-angle adjusting plate is movably arranged in the detection table main body, a front-back adjusting knob is arranged on the front surface of the multi-angle adjusting plate, and the front-back adjusting knob is arranged on the back surface of the detection table main body. A left-right adjusting knob is installed on the right side of the detection table body, a transverse threaded rod is fixedly connected to one side of the left-right adjusting knob, a first rotating bearing is installed on the other side of the transverse threaded rod, and the first rotating bearing is installed on one side of the interior of the detection table body. According to the multi-angle adjusting plate for the warping degree of the SiC wafer, when the warping degree of the SiC wafer is measured in a non-contact mode, a convenient manual front-back and left-right adjusting function is provided for a user, measurement can be conveniently conducted at different angles, the multi-angle adjusting plate and the non-contact measuring device for measuring the warping degree of the SiC wafer are installed together, and the overall practicability is improved.

Description

Technical Field

[0001] This utility model relates to the field of SiC wafer warpage measurement technology, specifically a non-contact device for measuring the warpage of SiC wafers. Background Technology

[0002] Silicon carbide wafers, as the core substrate of third-generation semiconductor materials, have been developed due to the urgent need to improve the performance of electronic devices operating under high-frequency, high-voltage, and high-temperature environments. Compared with traditional silicon-based materials, silicon carbide possesses superior physical properties such as a wide bandgap, high breakdown electric field strength, and high thermal conductivity. These properties give it great potential in fields such as power electronics, radio frequency communications, and new energy vehicles. Silicon carbide wafer fabrication technology began in the late 20th century. Early on, the industry was small-scale due to the difficulty of single-crystal growth and the complexity of defect control. However, with the development of crystal growth techniques such as vapor transport methods and high-temperature chemical vapor deposition... Breakthroughs in technology and continuous optimization of processing techniques such as cutting, polishing, and epitaxy have enabled the commercialization of 6-inch and 8-inch silicon carbide wafers. Globally, the United States, Europe, Japan, and other regions have taken the lead in developing the silicon carbide industry chain. In recent years, China has accelerated its technological catch-up through policy support and corporate investment, making significant progress in substrate preparation, epitaxial growth, and other aspects. The application scenarios of silicon carbide wafers are constantly expanding, covering industrial fields such as photovoltaic inverters, rail transportation, and smart grids, as well as emerging infrastructure such as 5G base stations and data centers. Its market penetration rate continues to grow with the decrease in cost and the improvement of technological maturity.

[0003] However, it still has some drawbacks. For example, SiC wafer warpage measurement devices usually use a fixed detection stage and lack multi-degree-of-freedom adjustment functions, which means that the wafer needs to be moved or the device position adjusted repeatedly during measurement. This is cumbersome and prone to human error, affecting the alignment efficiency and measurement accuracy of the white light interferometer detection optical path.

[0004] To address the aforementioned issues, this application proposes a non-contact device for measuring the warpage of SiC wafers. Utility Model Content

[0005] The purpose of this invention is to provide a non-contact device for measuring the warpage of SiC wafers, in order to solve the problem of lack of multi-degree-of-freedom adjustment function mentioned in the background art.

[0006] To achieve the above objectives, the technical solution adopted by this utility model is as follows: a non-contact device for measuring the warpage of SiC wafers, comprising a detection stage body, wherein a multi-angle adjustment plate is movable inside the detection stage body, a front-back adjustment knob is installed on the front of the multi-angle adjustment plate, and a left-right adjustment knob is installed on the right side of the detection stage body. The multi-angle adjustment plate provides users with a convenient manual front-back and left-right adjustment function when performing non-contact measurement of SiC wafer warpage, facilitating measurement at different angles. This multi-angle adjustment plate, when installed together with the non-contact measurement device for SiC wafer warpage measurement, enhances the overall practicality.

[0007] Preferably, a SiC wafer storage frame slides above the multi-angle adjustment plate, and a base support frame is fixedly connected below the main body of the testing station.

[0008] Preferably, a white light interferometer is fixedly connected to the upper rear end of the main body of the detection station, and a control console is installed on the left side of the white light interferometer.

[0009] Preferably, a transverse threaded rod is fixedly connected to one side of the left and right adjustment knob, and a first rotary bearing is installed on the other side of the transverse threaded rod. The first rotary bearing is installed inside one side of the main body of the testing platform.

[0010] Preferably, the transverse threaded rod engages inside the multi-angle adjustment plate, the transverse threaded rod moves inside the main body of the testing station, and a linkage plate is fixedly connected below the SiC wafer storage frame.

[0011] Preferably, the linkage plate has a longitudinal threaded rod engaged internally, and the linkage plate slides inside the multi-angle adjustment plate. A front-back adjustment knob is fixedly connected to one side of the longitudinal threaded rod, and a second rotary bearing is installed on the other side of the longitudinal threaded rod. When the left-right adjustment knob is rotated, the transverse threaded rod fixedly connected to the left-right adjustment knob rotates under the support of the first rotary bearing. Through thread engagement, the multi-angle adjustment plate is driven to move laterally inside the detection stage body. When the front-back adjustment knob is rotated, the longitudinal threaded rod fixedly connected to the front-back adjustment knob rotates under the support of the second rotary bearing. Through engagement with the linkage plate, the SiC wafer storage frame slides longitudinally along the multi-angle adjustment plate, thereby realizing the combined front-back and left-right displacement adjustment of the SiC wafer storage frame, so that the wafer under test can be accurately aligned with the detection optical path of the white light interferometer.

[0012] Compared with the prior art, the beneficial effects of this utility model are:

[0013] This invention provides a convenient manual adjustment function for SiC wafer warpage measurement by using a multi-angle adjustment plate, allowing for measurements at different angles during non-contact measurement. The multi-angle adjustment plate, when installed with the non-contact SiC wafer warpage measurement device, enhances the overall practicality. Attached Figure Description

[0014] Figure 1 This is a schematic diagram of the overall structure of a non-contact device for measuring the warpage of SiC wafers according to this utility model;

[0015] Figure 2 This is a schematic diagram of the main structure of a testing station for measuring the warpage of SiC wafers according to this utility model;

[0016] Figure 3 This is a schematic diagram of a multi-angle adjustment plate structure for measuring the warpage of SiC wafers according to this utility model;

[0017] Figure 4 This is a schematic diagram of the front and rear adjustment knob structure of a non-contact device for measuring the warp of SiC wafers according to this utility model.

[0018] In the diagram: 1. Main body of the testing station; 11. Base support frame; 2. White light interferometer; 3. Control console; 4. Multi-angle adjustment plate; 5. Front and rear adjustment knob; 51. Longitudinal threaded rod; 52. Second rotating bearing; 6. Left and right adjustment knob; 61. Transverse threaded rod; 62. First rotating bearing; 7. SiC wafer storage frame; 71. Linkage plate. Detailed Implementation

[0019] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present utility model. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments.

[0020] In this embodiment, as shown Figures 1-2 As shown, a SiC wafer storage frame 7 slides above the multi-angle adjustment plate 4, a base support frame 11 is fixedly connected below the main body of the detection stage 1, a white light interferometer 2 is fixedly connected above the rear end of the main body of the detection stage 1, and a control console 3 is installed on the left side of the white light interferometer 2.

[0021] In this embodiment, as shown Figures 3-4As shown, a horizontal threaded rod 61 is fixedly connected to one side of the left and right adjustment knob 6, and a first rotary bearing 62 is installed on the other side of the horizontal threaded rod 61. The first rotary bearing 62 is installed inside one side of the main body 1 of the testing station. The horizontal threaded rod 61 is engaged inside the multi-angle adjustment plate 4 and can move inside the main body 1 of the testing station. A linkage plate 71 is fixedly connected below the SiC wafer storage frame 7. A longitudinal threaded rod 51 is engaged inside the linkage plate 71 and slides inside the multi-angle adjustment plate 4. A front and rear adjustment knob 5 is fixedly connected to one side of the longitudinal threaded rod 51, and a second rotary bearing 5 is installed on the other side of the longitudinal threaded rod 51. 2. When the left and right adjustment knob 6 is rotated, the transverse threaded rod 61, which is fixedly connected to the left and right adjustment knob 6, rotates under the support of the first rotating bearing 62. Through threaded engagement, it drives the multi-angle adjustment plate 4 to move laterally inside the detection stage body 1. When the front and back adjustment knob 5 is rotated, the longitudinal threaded rod 51, which is fixedly connected to the front and back adjustment knob 5, rotates under the support of the second rotating bearing 52. Through the engagement linkage plate 71, it drives the SiC wafer storage frame 7 to slide longitudinally along the multi-angle adjustment plate 4, thereby realizing the combined front-back and left-right displacement adjustment of the SiC wafer storage frame 7, so that the wafer under test can be accurately aligned with the detection optical path of the white light interferometer 2.

[0022] Please see Figures 1-4 A non-contact device for measuring the warpage of SiC wafers includes a detection stage body 1. The detection stage body 1 has a movable multi-angle adjustment plate 4. A front-to-back adjustment knob 5 is mounted on the front of the multi-angle adjustment plate 4, and a left-to-right adjustment knob 6 is mounted on the right side of the detection stage body 1. The multi-angle adjustment plate 4 provides users with a convenient manual adjustment function for non-contact measurement of SiC wafer warpage, facilitating measurements at different angles. The integration of this multi-angle adjustment plate 4 with the non-contact measurement device for SiC wafer warpage enhances the overall practicality.

[0023] Working principle

[0024] A multi-angle adjustment plate 4 for a non-contact device for measuring SiC wafer warpage provides users with a convenient manual adjustment function for forward, backward, left, and right movements during non-contact measurement of SiC wafer warpage. This allows for measurement at different angles. The multi-angle adjustment plate 4 is integrated with the non-contact measuring device for SiC wafer warpage measurement, enhancing overall practicality. When the left-right adjustment knob 6 is rotated, the transverse threaded rod 61, fixedly connected to the knob 6, rotates under the support of the first rotating bearing 62. This threaded engagement drives the multi-angle adjustment plate 4 to move laterally within the main body 1 of the testing station. When the forward-backward adjustment knob 5 is rotated, the longitudinal threaded rod 51, fixedly connected to the knob 5, rotates under the support of the second rotating bearing 52. This engagement linkage plate 71 drives the SiC wafer storage frame 7 to slide longitudinally along the multi-angle adjustment plate 4, thereby achieving combined forward, backward, left, and right displacement adjustment of the SiC wafer storage frame 7. This ensures that the wafer under test can be accurately aligned with the detection optical path of the white light interferometer profilometer 2.

[0025] Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this utility model.

Claims

1. A non-contact device for measuring the warpage of SiC wafers, comprising a detection stage body (1), characterized in that: The main body (1) of the testing platform has a multi-angle adjustment plate (4) that moves inside. The front of the multi-angle adjustment plate (4) is equipped with a front and rear adjustment knob (5), and the right side of the main body (1) is equipped with a left and right adjustment knob (6).

2. The non-contact device for measuring the warpage of SiC wafers according to claim 1, characterized in that: A SiC wafer storage frame (7) slides above the multi-angle adjustment plate (4), and a base support frame (11) is fixedly connected below the main body of the testing station (1).

3. The non-contact device for measuring the warpage of SiC wafers according to claim 2, characterized in that: A white light interferometer (2) is fixedly connected to the upper rear end of the main body (1) of the detection station, and a control console (3) is installed on the left side of the white light interferometer (2).

4. A non-contact device for measuring the warpage of SiC wafers according to claim 3, characterized in that: A transverse threaded rod (61) is fixedly connected to one side of the left and right adjustment knob (6), and a first rotating bearing (62) is installed on the other side of the transverse threaded rod (61). The first rotating bearing (62) is installed inside one side of the main body (1) of the testing platform.

5. A non-contact device for measuring the warpage of SiC wafers according to claim 4, characterized in that: The transverse threaded rod (61) engages inside the multi-angle adjustment plate (4), the transverse threaded rod (61) moves inside the main body (1) of the testing station, and a linkage plate (71) is fixedly connected below the SiC wafer storage frame (7).

6. A non-contact device for measuring the warpage of SiC wafers according to claim 5, characterized in that: The linkage plate (71) is internally engaged with a longitudinal threaded rod (51), the linkage plate (71) slides inside the multi-angle adjustment plate (4), a front and rear adjustment knob (5) is fixedly connected to one side of the longitudinal threaded rod (51), and a second rotary bearing (52) is installed on the other side of the longitudinal threaded rod (51).

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